JP5053455B1 - Dicing tape for semiconductor processing - Google Patents

Dicing tape for semiconductor processing Download PDF

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JP5053455B1
JP5053455B1 JP2011237223A JP2011237223A JP5053455B1 JP 5053455 B1 JP5053455 B1 JP 5053455B1 JP 2011237223 A JP2011237223 A JP 2011237223A JP 2011237223 A JP2011237223 A JP 2011237223A JP 5053455 B1 JP5053455 B1 JP 5053455B1
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adhesive layer
pressure
sensitive adhesive
dicing
semiconductor processing
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JP2013098224A (en
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晃 阿久津
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THE FURUKAW ELECTRIC CO., LTD.
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THE FURUKAW ELECTRIC CO., LTD.
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Priority to MYPI2013004007A priority patent/MY159804A/en
Priority to PCT/JP2012/077252 priority patent/WO2013061931A1/en
Priority to CN201280028334.9A priority patent/CN103620743B/en
Priority to TW101139740A priority patent/TWI421322B/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08—Homopolymers or copolymers of acrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C09J4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/10—Esters
    • C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
    • C08F222/103—Esters of polyhydric alcohols or polyhydric phenols of trialcohols, e.g. trimethylolpropane tri(meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68331—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding of passive members, e.g. die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Abstract

【課題】半導体ウェハをダイシング処理する工程においてウェハを十分に保持する粘着力を有し、かつ、パッケージダイシング後に、個片化されたパッケージのトレーや装置への貼着等を発生させない、半導体加工用ダイシング粘着テープを提供する。
【解決手段】基材フィルムの少なくとも片面に、放射線硬化型の粘着剤層が形成されて成り、前記粘着剤層は、ベースポリマーとしてアクリル系重合体を含有する樹脂組成物から構成され、前記粘着剤層の厚さは、１０〜３０μｍであり、前記粘着剤層の、ＪＩＳ Ｚ０２３７に基づくＳＵＳ３０４に対する放射線照射後の粘着力が、９０°引き剥がし試験を行ったときに１．０〜２．０Ｎ／２５ｍｍテープ幅であり、かつ前記粘着剤層の、大気雰囲気下条件での放射線照射後のプローブタックのピーク強度が５０〜１５０ｍＮ／ｍｍ２であることを特徴とする半導体加工用ダイシングテープ。
【選択図】図１Semiconductor processing having adhesive strength to sufficiently hold a wafer in a dicing process of a semiconductor wafer, and does not cause sticking of an individual package to a tray or an apparatus after package dicing A dicing adhesive tape is provided.
A radiation curable pressure-sensitive adhesive layer is formed on at least one surface of a base film, and the pressure-sensitive adhesive layer is composed of a resin composition containing an acrylic polymer as a base polymer. The thickness of the adhesive layer is 10 to 30 μm, and the adhesive strength of the adhesive layer after irradiation with respect to SUS304 based on JIS Z0237 is 1.0 to 2.0 N when a 90 ° peel test is performed. A dicing tape for semiconductor processing having a tape width of 25 mm / 25 mm and a peak strength of the probe tack after irradiation of the pressure-sensitive adhesive layer under atmospheric conditions is 50 to 150 mN / mm 2 .
[Selection] Figure 1

Description

本発明は、半導体ウェハをチップにダイシングする際などにおけるウェハの固定保持に適したダイシングテープに関し、特に高密度実装半導体パッケージ加工用として好適な半導体加工用ダイシングテープに関するものである。   The present invention relates to a dicing tape suitable for fixing and holding a wafer when dicing a semiconductor wafer into chips, and more particularly to a semiconductor processing dicing tape suitable for processing a high-density mounting semiconductor package.

従来、回路パターンの形成された半導体ウェハをチップ状に分離する、いわゆるダイシング加工を行う際は、ウェハの固定に半導体加工用テープを用いるピックアップ方式が採用されている。この方式においては、大径のウェハは半導体加工用テープに貼着、固定された状態でチップ状にダイシングされ、洗浄、乾燥の後、ピックアップ工程を経て、レジン封止によりパッケージ化される。   2. Description of the Related Art Conventionally, when performing a so-called dicing process for separating a semiconductor wafer on which a circuit pattern is formed into chips, a pickup system using a semiconductor processing tape is used to fix the wafer. In this method, a large-diameter wafer is diced into chips in a state of being stuck and fixed to a semiconductor processing tape, and after cleaning and drying, it is packaged by resin sealing after a pick-up process.

近年、半導体素子の小型化の一形態として、パターン回路側に電極を有するフリップチップ型パッケージが各社で開発されている。このフリップチップ型パッケージの中でも、ウェハレベル・チップサイズ・パッケージ（ＷＬＣＳＰ）は、前処理が終わったウェハに、ポリイミドコート、Ｃｕ再配置配線形成、Ｃｕポスト形成、レジン封止、レジン研磨、端子形成、と順次パッケージ処理を施した後、最後に個々のチップに切り分けることにより作製されるものであり、チップサイズと同レベルサイズのパッケージである。
このように樹脂で一括封止されたＷＬＣＳＰは、一般に、半導体チップをガラスエポキシ基板またはリードフレームにボンディングし、パッケージモールド樹脂にて一括モールドした後、キュアしたものを、半導体加工用テープに貼り付け固定し、ダイシングブレードによりダイシングされて得られる。パッケージのダイシング工程では、切断時の負荷が大きい。また、パッケージ樹脂は離型剤を含有し、その表面は微小な凹凸を有する構造を有する。したがって、半導体加工用テープには、強固にパッケージを保持でき、ダイシング時にパッケージが飛散するなどの不具合が生じないように、柔軟な粘着剤が使用されている。 In recent years, flip chip type packages having electrodes on the pattern circuit side have been developed by various companies as one form of miniaturization of semiconductor elements. Among the flip chip type packages, the wafer level chip size package (WLCSP) is a pre-processed wafer on which polyimide coating, Cu rearrangement wiring formation, Cu post formation, resin sealing, resin polishing, and terminal formation are performed. , And after sequentially performing the package processing, it is manufactured by cutting into individual chips at the end, and is a package of the same level as the chip size.
WLCSP encapsulated with resin in this way is generally bonded to a semiconductor processing tape by bonding a semiconductor chip to a glass epoxy substrate or a lead frame, molding it in a package mold resin, and then curing it. Obtained by fixing and dicing with a dicing blade. In the package dicing process, the load during cutting is large. Further, the package resin contains a release agent, and the surface thereof has a structure having minute irregularities. Therefore, a flexible adhesive is used for the semiconductor processing tape so that the package can be firmly held and a problem such as scattering of the package during dicing does not occur.

ところが、ダイシングブレードはテープまで切り込むため、このような柔軟な粘着剤を使用した場合、テープ粘着層の巻き上げが発生し、巻き上げられた微小な糊玉が個片化されたパッケージの側面に残ることがある。このようにパッケージ側面に残った微小な糊玉により、パッケージをピックアップした後、搬送する際に、トレーや送管にパッケージが付着し、剥がれなくなるという問題が発生する場合があった。   However, since the dicing blade cuts up to the tape, when such a flexible adhesive is used, the tape adhesive layer rolls up and the fine glue balls that have been wound up remain on the side of the package that has been separated into pieces. There is. Thus, when the package is picked up by the small glue balls remaining on the side surface of the package and then transported, the package may adhere to the tray or the tube and may not be peeled off.

糊玉を抑制する対策としては、モノマー成分の少なくとも１種が（メタ）アクリル酸アルキルエステルであるとともに、該アルキル基が脂環式炭化水素基である共重合体を、ベースポリマーとする粘着剤が基材フィルムの少なくとも片面に形成されたダイシングテープが報告されている（特許文献１）。このダイシングテープは、側面粘着剤の付着防止性に非常に優れた粘着テープといえる。
一方、ダイシング時におけるウェハ保持の点から、粘着剤層の厚さは厚いほど好ましいものである。ところが、前記の従来型のダイシングテープでは、粘着剤層の厚さが厚い場合に、パッケージ側面への糊残りが発生する場合があり、さらなる改善が望まれていたのが実情である。 As a measure to suppress paste balls, a pressure-sensitive adhesive comprising, as a base polymer, a copolymer in which at least one of the monomer components is a (meth) acrylic acid alkyl ester and the alkyl group is an alicyclic hydrocarbon group Has reported a dicing tape formed on at least one side of a substrate film (Patent Document 1). This dicing tape can be said to be a pressure-sensitive adhesive tape that is extremely excellent in preventing adhesion of side pressure-sensitive adhesive.
On the other hand, from the viewpoint of holding the wafer during dicing, the thicker the pressure-sensitive adhesive layer, the better. However, in the conventional dicing tape, when the pressure-sensitive adhesive layer is thick, adhesive residue may be generated on the side surface of the package, and it is a fact that further improvement is desired.

一方、パッケージ側面に残った微小な糊玉の粘着性を無くすために、ダイシング後に、半導体加工用テープと基板をリングフレームごと加熱炉に入れ、微小な糊玉をキュアする方法が知られている。しかし、この場合、半導体加工用テープにおける基材や粘着剤層の耐熱性が低いと、加熱工程後、パッケージをピックアップする際に、粘着剤層に貼合していたパッケージ樹脂面（パッケージの背面）のパッケージレーザーマーク部分に大きく粘着剤が残り、パッケージへ印字されたレーザーマークが不明瞭になってしまうという問題があった。また、リングフレームからテープを剥がす際に、糊がリングフレームに残り、繰り返し使用されるべきリングフレームの再使用に支障が生ずるという問題もあった。   On the other hand, in order to eliminate the adhesiveness of the fine glue balls remaining on the side of the package, after dicing, a method for curing the fine glue balls by putting the semiconductor processing tape and the substrate together with the ring frame into a heating furnace is known. . However, in this case, if the heat resistance of the base material or the adhesive layer in the semiconductor processing tape is low, the package resin surface (the back surface of the package) that has been bonded to the adhesive layer when the package is picked up after the heating process. ), A large amount of adhesive remains in the package laser mark portion, and the laser mark printed on the package becomes unclear. In addition, when the tape is peeled off from the ring frame, the glue remains on the ring frame, which causes a problem in that the ring frame that should be repeatedly used may be reused.

特開２００７−１０００６４号公報JP 2007-100064 A

そこで、本発明は、以上のとおりの従来技術の問題点を鑑みてなされたものであり、半導体ウェハをダイシング処理する工程において、ウェハやそれが切断されたチップを十分に保持する粘着力を有し、かつ、パッケージダイシング後に、個片化されたパッケージに微小な糊玉が付着した場合でも、熱処理工程を行なうことなく、トレーや装置への貼着、さらには、送管を通して搬送する場合においての装置への付着や個片化されたパッケージ同士の付着を発生させない、半導体加工用ダイシング粘着テープを提供することを課題とする。   Therefore, the present invention has been made in view of the problems of the conventional technology as described above, and has an adhesive force to sufficiently hold the wafer and chips from which it has been cut in the process of dicing the semiconductor wafer. In addition, even when a small glue ball adheres to the singulated package after package dicing, it is not attached to a tray or device without carrying out a heat treatment process, and further, when transported through a pipe It is an object of the present invention to provide a dicing adhesive tape for semiconductor processing that does not cause adhesion to the apparatus and adhesion between separated packages.

本発明者らは、上記課題を解決するために鋭意検討を重ねた結果、放射線照射前後において特定の粘着強度およびプローブタックのピーク強度を有する放射線硬化型の粘着剤層を有する半導体加工用ダイシングテープを用いることにより、チップを保持する上で十分な密着性が得られ、かつ、個片化されたパッケージに微小な糊玉が付着した場合でも、トレーや送管にパッケージが貼着することなく搬送できることを見出し、本願発明に至ったものである。   As a result of intensive studies in order to solve the above problems, the present inventors have conducted dicing tape for semiconductor processing having a radiation curable pressure-sensitive adhesive layer having specific adhesive strength and probe tack peak strength before and after irradiation. By using this, sufficient adhesion can be obtained to hold the chip, and even if a small glue ball adheres to the separated package, the package does not stick to the tray or the tube. The present inventors have found that it can be conveyed and have arrived at the present invention.

すなわち、本発明は、
半導体パッケージをダイシングする工程において使用される半導体加工用ダイシングテープであって、基材フィルムの少なくとも片面に、放射線硬化型の粘着剤層が形成されて成り、前記粘着剤層は、ベースポリマーとして、アクリル酸メチルおよびアクリル酸２−エチルへキシルをモノマー成分として含有するアクリル系重合体を含有する樹脂組成物から構成され、前記樹脂組成物のガラス転移温度が−３０〜−１１℃であり、前記粘着剤層の厚さは、１０〜３０μｍであり、前記粘着剤層の、ＪＩＳ Ｚ０２３７に基づくＳＵＳ３０４に対する放射線照射後の粘着力が、９０°引き剥がし試験を行ったときに１．０〜１．９Ｎ／２５ｍｍテープ幅であり、前記粘着剤層の、大気雰囲気下条件での放射線照射後のプローブタックのピーク強度が５４〜１４８ｍＮ／ｍｍ２であり、前記粘着剤層の、ＪＩＳ Ｚ０２３７に基づくＳＵＳ３０４に対する放射線照射前の粘着力が、９０°引き剥がし試験を行ったときに５．３〜９．７Ｎ／２５ｍｍテープ幅であり、かつ前記粘着剤層の、放射線照射前のプローブタックのピーク強度が２５３〜７２３ｍＮ／ｍｍ ２ であることを特徴とする半導体加工用ダイシングテープ
を提供するものである。 That is, the present invention
A dicing tape for semiconductor processing used in a process of dicing a semiconductor package, wherein a radiation curable pressure-sensitive adhesive layer is formed on at least one surface of a base film, and the pressure-sensitive adhesive layer is a base polymer, It is composed of a resin composition containing an acrylic polymer containing methyl acrylate and 2-ethylhexyl acrylate as a monomer component, and the glass transition temperature of the resin composition is −30 to −11 ° C., The thickness of the pressure-sensitive adhesive layer is 10 to 30 μm, and the pressure-sensitive adhesive strength of the pressure-sensitive adhesive layer after irradiation with respect to SUS304 based on JIS Z0237 is 1.0 to 1 when a 90 ° peeling test is performed . 9 N / 25 mm tape width, peak strength of probe tack after irradiation of the pressure-sensitive adhesive layer under atmospheric conditions There Ri 54~148 mN / mm 2 der, of the pressure-sensitive adhesive layer, the adhesive force before irradiation for SUS304-based JIS Z0237 is, 5.3～9.7N when subjected to 90 ° peel test / The present invention provides a dicing tape for semiconductor processing having a width of 25 mm and a peak strength of probe tack before irradiation of the pressure-sensitive adhesive layer of 253 to 723 mN / mm 2 .

本願発明の半導体加工用ダイシングテープは、基材フィルムの少なくとも片面に、放射線硬化型の粘着剤層が形成されて成るものであり、粘着剤層が、ベースポリマーとしてアクリル系重合体を含有する樹脂組成物から構成されることから、半導体ウェハやパッケージへの汚染性低減に優れる。また、該粘着剤層の厚さを、１０〜３０μｍとすることにより、ダイシング時に、ウェハのチッピングやパッケージ側面への糊残りを防ぎながらも、十分にウェハを保持することが可能となる。さらに、該粘着剤層の、ＪＩＳ Ｚ０２３７に基づくＳＵＳ３０４に対する放射線照射後の粘着力が、９０°引き剥がし試験を行ったときに１．０〜２．０Ｎ／２５ｍｍテープ幅であることから、ピックアップ時の周辺チップのばらけや、搬送時におけるテープからのパッケージの脱離を抑制できる。そして、該粘着剤層の、大気雰囲気下条件での放射線照射後のプローブタックのピーク強度が５０〜１５０ｍＮ／ｍｍ２であることから、パッケージに糊玉が発生した場合においても、トレーや送管へのパッケージの付着を抑制できる。 The dicing tape for semiconductor processing according to the present invention is formed by forming a radiation curable pressure-sensitive adhesive layer on at least one surface of a base film, and the pressure-sensitive adhesive layer contains a resin containing an acrylic polymer as a base polymer. Since it is comprised from a composition, it is excellent in the contamination reduction to a semiconductor wafer and a package. Further, by setting the thickness of the pressure-sensitive adhesive layer to 10 to 30 μm, it becomes possible to hold the wafer sufficiently while preventing chipping of the wafer and adhesive residue on the side of the package during dicing. Furthermore, since the adhesive strength of the pressure-sensitive adhesive layer after irradiation with respect to SUS304 based on JIS Z0237 is 1.0 to 2.0 N / 25 mm tape width when a 90 ° peel test is performed, It is possible to prevent the peripheral chips from being scattered and the package from being detached from the tape during transport. And since the peak intensity of the probe tack after irradiation of the pressure-sensitive adhesive layer under the atmospheric conditions is 50 to 150 mN / mm 2 , even when glue balls are generated in the package, the tray or the tube The package can be prevented from sticking to the surface.

本発明の半導体加工用ダイシングテープの概略断面図である。It is a schematic sectional drawing of the dicing tape for semiconductor processing of this invention.

以下、図面を参照して本発明の半導体加工用ダイシングテープの好ましい実施形態について説明する。
本発明の半導体加工用ダイシングテープ１は、基材フィルム３の少なくとも片面に、放射線硬化型の粘着剤層５が形成されて成るものである。基材フィルム３としては、通常半導体加工用テープに使用されるものであれば特に限定されるものではないが、本発明の半導体加工用ダイシングテープ１では、ピックアップ時の粘着力を貼付け時よりも低下させるために、粘着剤層に放射線が照射される必要があることから、十分な放射線透過性を有するものが好ましい。したがって、プラスチックフィルムが特に好適に用いられる。代表的な材料としては、例えば、低密度ポリエチレン、直鎖状ポリエチレン、中密度ポリエチレン、高密度ポリエチレン、超低密度ポリエチレン、ランダム共重合ポリプロピレン、ブロック共重合ポリプロピレン、ホモポリプロピレン、ポリブテン、ポリメチルペンテン等のポリオレフィン、エチレン−酢酸ビニル共重合体、アイオノマー樹脂、エチレン−（メタ）アクリル酸共重合体、エチレン−（メタ）アクリル酸エステル（ランダム、交互）共重合体、エチレン−ブテン共重合体、エチレン−へキセン共重合体、ポリウレタン、ポリエチレンテレフタレート等のポリエステル、ポリイミド、ポリエーテルケトン、ポリスチレン、ポリ塩化ビニル、ポリ塩化ビニリデン、フッ素樹脂、シリコーン樹脂、セルロース系樹脂およびこれらの架橋体等のポリマーがあげられる。 Hereinafter, a preferred embodiment of a dicing tape for semiconductor processing of the present invention will be described with reference to the drawings.
The dicing tape 1 for semiconductor processing according to the present invention has a radiation curable pressure-sensitive adhesive layer 5 formed on at least one surface of a base film 3. Although it will not specifically limit if it is normally used for the tape for semiconductor processing as the base film 3, In the dicing tape 1 for semiconductor processing of this invention, the adhesive force at the time of pick-up is rather than the time of affixing. Since it is necessary to irradiate the pressure-sensitive adhesive layer with radiation in order to lower it, those having sufficient radiation transparency are preferred. Therefore, a plastic film is particularly preferably used. Typical materials include, for example, low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, etc. Polyolefin, ethylene-vinyl acetate copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene -Hexene copolymers, polyesters such as polyurethane and polyethylene terephthalate, polyimides, polyether ketones, polystyrene, polyvinyl chloride, polyvinylidene chloride, fluororesins, silicone resins, cellulosic resins and their bridges Polymer of the body, and the like.

基材フィルム３の製膜方法は、従来公知の製膜方法により行なうことができる。例えば、カレンダー製膜、キャスティング製膜、インフレーション押出し、Ｔダイ押出し等を好適に用いることができる。
こうして得られる基材フィルム３の厚さは、通常１０〜３００μｍ、好ましくは３０〜２００μｍ程度である。なお、基材フィルム３は、単層フィルムまたは多層フィルムのいずれであってもよく、前記の樹脂を２種以上ドライブレンドしたブレンド基材であってもよい。多層フィルムは、前記樹脂などを用いて、共押出し法、ドライラミネート法等の慣用のフィルム積層法により製造できる。また、基材フィルム３は、無延伸で用いてもよく、必要に応じて一軸または二軸の延伸処理を施してもよい。このようにして製造された基材フィルム３表面には、必要に応じてマット処理、コロナ放電処理、プライマー処理、架橋処理等の慣用の物理的または化学的処理を施すことができる。 The film formation method of the base film 3 can be performed by a conventionally known film formation method. For example, calendar film formation, casting film formation, inflation extrusion, T-die extrusion and the like can be suitably used.
The thickness of the base film 3 thus obtained is usually 10 to 300 μm, preferably about 30 to 200 μm. The base film 3 may be either a single layer film or a multilayer film, and may be a blend base material obtained by dry blending two or more of the above resins. A multilayer film can be produced by a conventional film laminating method such as a co-extrusion method or a dry laminating method using the resin or the like. Moreover, the base film 3 may be used without stretching, and may be subjected to uniaxial or biaxial stretching treatment as necessary. The surface of the base film 3 thus produced can be subjected to conventional physical or chemical treatments such as mat treatment, corona discharge treatment, primer treatment, and crosslinking treatment as necessary.

次に、半導体加工用ダイシングテープ１における放射線硬化型の粘着剤層５について説明する。本発明者らは、半導体加工用ダイシングテープ１における放射線硬化型の粘着剤層５の放射線照射後の粘着力を鋭意検討した結果、粘着強度を１．０〜２．０Ｎ／２５ｍｍテープ幅とすることで、ピックアップ時の周辺チップのばらけや、搬送時におけるテープからのパッケージの脱離を抑制できることを見出した。一方、粘着力が１．０Ｎ／２５ｍｍテープ幅未満の場合には、テープからパッケージの脱離が頻発してしまい、２．０Ｎ／２５ｍｍテープ幅より大きい場合には、ピックアップ時にテープからパッケージを剥離することができず、ピックアップ不良が発生してしまうことが明らかとなった。   Next, the radiation curable pressure-sensitive adhesive layer 5 in the semiconductor processing dicing tape 1 will be described. As a result of intensive studies on the adhesive strength of the radiation curable pressure-sensitive adhesive layer 5 in the semiconductor processing dicing tape 1 after irradiation, the adhesive strength is set to 1.0 to 2.0 N / 25 mm tape width. As a result, it has been found that it is possible to suppress the dispersion of peripheral chips during pick-up and the removal of the package from the tape during transport. On the other hand, when the adhesive strength is less than 1.0N / 25mm tape width, the package is frequently detached from the tape, and when it is larger than 2.0N / 25mm tape width, the package is peeled off from the tape during pick-up. It was revealed that a pickup failure occurred.

また、本発明者らは、さらに、半導体加工用ダイシングテープ１における放射線硬化型の粘着剤層５について、放射線照射を大気雰囲気下条件で行った際のタックピーク強度を鋭意検討した。その結果、その値を５０〜１５０ｍＮ／ｍｍ２とすることで、パッケージに糊玉が発生した場合においても、トレーや送管へのパッケージの付着を抑制できることを見出した。一方、タックピーク強度が１５０ｍＮ／ｍｍ２を超えると糊玉のベタツキが強く、トレーや送管へのパッケージの付着が頻発してしまい、タックピーク強度が５０ｍＮ／ｍｍ２未満では、ダイシング後に個片化されたパッケージをピックアップする際、ピン突き上げ時の周辺チップばらけや、ピックアップ後に一時保管や搬送する際にテープからパッケージが脱離し易いことが明らかとなった。 Further, the present inventors have further studied the tack peak intensity when radiation irradiation is performed under atmospheric conditions for the radiation curable pressure-sensitive adhesive layer 5 in the dicing tape 1 for semiconductor processing. As a result, it was found that by setting the value to 50 to 150 mN / mm 2 , adhesion of the package to the tray or the pipe can be suppressed even when glue balls are generated in the package. On the other hand, when the tack peak intensity exceeds 150 mN / mm 2 , the stickiness of sticky balls is strong, and the package adheres frequently to the tray and the tube. When the tack peak intensity is less than 50 mN / mm 2 , When picking up the package, it became clear that peripheral chips were scattered when the pins were pushed up, and the package was easily detached from the tape when temporarily stored or transported after picking up.

なお、一般に、パッケージ樹脂は表面に微小な凹凸を有するが、凹凸が小さいパッケージを保持する場合には、粘着剤層は十分な粘着力を、凹凸が大きいパッケージを保持する場合には、粘着剤層は十分なタックピーク強度を有する必要がある。したがって、本発明の半導体加工用ダイシングテープ１における放射線硬化型の粘着剤層５の、ＪＩＳ Ｚ０２３７に基づくＳＵＳ３０４に対する放射線照射前の粘着力は、５．０〜１０．０Ｎ／２５ｍｍテープ幅、放射線照射前のプローブタックのピーク強度は、２５０〜７５０ｍＮ／ｍｍ２であることが望ましい。放射線照射前の粘着力およびタックピーク強度を、これらの数値範囲のものとすることにより、種々のパッケージを用いて加工を行なった場合においても、強固にパッケージを保持でき、ダイシング時の個片化されたパッケージの飛散を防止することができる。一方、放射線照射前の粘着力・タック強度が低すぎると、ダイシング時にパッケージが飛散し易くなり、高すぎると、パッケージへの密着が過剰となりすぎ、剥離の際の糊残りや、基材と粘着剤間での界面剥離が発生し易くなる。 In general, the package resin has minute unevenness on the surface, but when holding a package with small unevenness, the adhesive layer has sufficient adhesive force, and when holding a package with large unevenness, The layer should have sufficient tack peak intensity. Therefore, the adhesive strength of the radiation curable pressure-sensitive adhesive layer 5 in the dicing tape 1 for semiconductor processing of the present invention before irradiating SUS304 based on JIS Z0237 is 5.0 to 10.0 N / 25 mm tape width, radiation irradiation. The peak intensity of the previous probe tack is desirably 250 to 750 mN / mm 2 . By setting the adhesive strength and tack peak intensity before irradiation within these numerical ranges, the package can be held firmly even when processed using various packages, and individualized during dicing. The scattered package can be prevented from being scattered. On the other hand, if the adhesive strength / tack strength before radiation irradiation is too low, the package is likely to scatter during dicing, and if it is too high, adhesion to the package will be excessive, causing adhesive residue during peeling or adhesion to the substrate. Interfacial peeling between agents is likely to occur.

以上のような本発明者らによる検討結果を鑑み、本発明の半導体加工用ダイシングテープ１における粘着剤層５について説明する。該粘着剤層５は、ベースポリマーとしてアクリル系重合体を含有する樹脂組成物から構成される。これは、アクリル系重合体が、一般に半導体ウェハやパッケージへの汚染性低減に優れるためである。また、本発明の半導体加工用ダイシングテープ１における粘着剤層５は、ダイシング時のパッケージ飛散を防止し、かつピックアップ時にはパッケージからの剥離性を向上させるために、半導体部品（半導体ウエハ等）の被着体への貼付け時には、チップの剥離を防止できる程度に十分な粘着力を有し、ピックアップ時には、貼付け時よりも粘着力を低下させられるものである。すなわち、粘着剤層５としては、紫外線、電子線などにより硬化する放射線硬化型の粘着剤層が用いられる。   In view of the above examination results by the present inventors, the adhesive layer 5 in the semiconductor processing dicing tape 1 of the present invention will be described. The pressure-sensitive adhesive layer 5 is composed of a resin composition containing an acrylic polymer as a base polymer. This is because an acrylic polymer is generally excellent in reducing contamination to semiconductor wafers and packages. In addition, the adhesive layer 5 in the dicing tape 1 for semiconductor processing of the present invention prevents the scattering of the package during dicing and improves the peelability from the package during pick-up so that the semiconductor component (semiconductor wafer or the like) is covered. Adhesive strength sufficient to prevent peeling of the chip can be obtained when pasted on the adherend, and adhesive strength can be reduced when picking up compared to pasting. That is, as the pressure-sensitive adhesive layer 5, a radiation curable pressure-sensitive adhesive layer that is cured by ultraviolet rays, electron beams, or the like is used.

このような放射線硬化型の粘着剤層５は、ベースポリマーとしてアクリル系重合体を含有する樹脂組成物から構成され、さらに、炭素−炭素二重結合等の放射線硬化型の官能基を有するものである。具体的には、アクリル系重合体を含有する樹脂組成物に、放射線硬化型のモノマー成分やオリゴマー成分（以下、これらを放射線硬化型成分という）を配合することにより調製されるものや、ベースポリマーとして、アクリル系重合体を基本骨格とし、かつ、炭素−炭素二重結合をポリマーの側鎖または主鎖中もしくは主鎖末端に有するものが挙げられる。 Such a radiation curable pressure-sensitive adhesive layer 5 is composed of a resin composition containing an acrylic polymer as a base polymer, and further has a radiation curable functional group such as a carbon-carbon double bond. is there. Specifically, a resin composition containing an acrylic polymer is prepared by blending a radiation curable monomer component or oligomer component (hereinafter referred to as a radiation curable component) or a base polymer. Examples thereof include those having an acrylic polymer as a basic skeleton and having a carbon-carbon double bond in a side chain, main chain or main chain terminal of the polymer.

まず、アクリル系重合体としては、例えば、（メタ）アクリル酸アルキルエステルの重合体、または、必要に応じて粘着性、凝集力、耐熱性などの改質を目的として（メタ）アクリル酸アルキルエステルに共重合性モノマーを共重合した共重合体が好ましく用いられる。なお、（メタ）アクリル酸エステルとは、アクリル酸エステルおよび／またはメタアクリル酸エステルをいい、本明細書における（メタ）とは全て同様の意味を有するものとする。（メタ）アクリル酸アルキルエステルのアルキルエステル基としては、例えば、メチルエステル、エチルエステル、ブチルエステル、２−エチルヘキシルエステル、オクチルエステル、イソノニルエステルなどがあげられる。   First, as the acrylic polymer, for example, a polymer of (meth) acrylic acid alkyl ester, or (meth) acrylic acid alkyl ester for the purpose of modifying adhesiveness, cohesive force, heat resistance, etc., if necessary. A copolymer obtained by copolymerizing a copolymerizable monomer is preferably used. In addition, (meth) acrylic acid ester means acrylic acid ester and / or methacrylic acid ester, and (meth) in this specification shall have the same meaning. Examples of the alkyl ester group of the (meth) acrylic acid alkyl ester include methyl ester, ethyl ester, butyl ester, 2-ethylhexyl ester, octyl ester, and isononyl ester.

一般に、粘着力やタックピーク強度は、ベースポリマーの主鎖構造とともに、その側鎖の鎖長を調整することにより制御できる。したがって、本発明の半導体加工用ダイシングテープ１では、ベースポリマーを構成するアクリル系重合体は、例えば、共重合性モノマーとして、（メタ）アクリル酸のヒドロキシアルキルエステル（例えば、ヒドロキシエチルエステル、ヒドロキシブチルエステル、ヒドロキシヘキシルエステル等）、（メタ）アクリル酸グリシジルエステル、（メタ）アクリル酸、イタコン酸、無水マレイン酸、（メタ）アクリルアミド、（メタ）アクリル酸Ｎ−ヒドロキシメチルアミド、（メタ）アクリル酸アルキルアミノアルキルエステル（例えば、ジメチルアミノエチルメタクリレート、ｔ−ブチルアミノエチルメタクリレート等）、Ｎ−ビニルピロリドン、アクリロイルモルフォリン、酢酸ビニル、スチレン、アクリロニトリル等を有するものとすることができる。これらの共重合性モノマーは、１種または２種以上使用できる。さらに、前記アクリル系重合体は、架橋させるために、必要に応じて多官能性モノマーなどを共重合用モノマー成分として含むことができる。
粘着剤層を構成する樹脂組成物におけるアクリル系重合体としては、アクリル酸メチルおよびアクリル酸２−エチルへキシルが含有するものがとくに好ましい。これは、ホモポリマーでのガラス転移温度が高いアクリル酸メチルと、ホモポリマーでのガラス転移温度が低いアクリル酸２−エチルへキシルを共重合させることで、粘着力とタックピーク強度の制御が容易となることが期待されるためである。 In general, the adhesive strength and tack peak strength can be controlled by adjusting the chain length of the side chain together with the main chain structure of the base polymer. Therefore, in the semiconductor processing dicing tape 1 of the present invention, the acrylic polymer constituting the base polymer is, for example, a hydroxyalkyl ester of (meth) acrylic acid (for example, hydroxyethyl ester, hydroxybutyl) as a copolymerizable monomer. Ester, hydroxyhexyl ester, etc.), (meth) acrylic acid glycidyl ester, (meth) acrylic acid, itaconic acid, maleic anhydride, (meth) acrylamide, (meth) acrylic acid N-hydroxymethylamide, (meth) acrylic acid Having alkylaminoalkyl ester (for example, dimethylaminoethyl methacrylate, t-butylaminoethyl methacrylate, etc.), N-vinylpyrrolidone, acryloylmorpholine, vinyl acetate, styrene, acrylonitrile, etc. Rukoto can. These copolymerizable monomers can be used alone or in combination of two or more. Further, the acrylic polymer may contain a polyfunctional monomer or the like as a monomer component for copolymerization, if necessary, for crosslinking.
As the acrylic polymer in the resin composition constituting the pressure-sensitive adhesive layer, those containing methyl acrylate and 2-ethylhexyl acrylate are particularly preferable. It is easy to control adhesive strength and tack peak strength by copolymerizing methyl acrylate with high glass transition temperature in homopolymer and 2-ethylhexyl acrylate with low glass transition temperature in homopolymer. This is because it is expected to be.

前記アクリル系重合体は、単一モノマーまたは２種以上のモノマー混合物を重合反応させることにより得られる。重合反応は、溶液重合、乳化重合、塊状重合、懸濁重合等のいずれの方式で行なってもよい。なお、粘着剤層は半導体ウェハ等の汚染防止等の観点から、低分子量物の含有量が小さいものが好ましい。したがって、アクリル系重合体の重量平均分子量は、２０万以上、好ましくは２０万〜３００万程度、さらに好ましくは５０万〜３００万程度とする。 The acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. The polymerization reaction may be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like. The pressure-sensitive adhesive layer preferably has a low content of low molecular weight substances from the viewpoint of preventing contamination of a semiconductor wafer or the like. Therefore, the weight average molecular weight of the acrylic polymer is 200,000 or more, preferably about 200,000 to 3,000,000, more preferably about 500,000 to 3,000,000.

次に、放射線硬化型の粘着剤層５において、アクリル系重合体を含有する樹脂組成物とともに、配合される放射線硬化型成分としては、ピックアップ工程時においてダイシングテープと半導体の剥離を容易とする特性を提供できうるものであれば、特に限定されないが、モノマー成分やオリゴマー成分の例として、トリメチロールプロパントリ（メタ）アクリレート、ペンタエリスリトールトリ（メタ）アクリレート、テトラエチレングリコールジ（メタ）アクリレート、１，６−へキサンジオールジ（メタ）アクリレート、ネオペンチルグリコールジ（メタ）アクリレート、ジペンタエリスリトールヘキサ（メタ）アクリレート等の（メタ）アクリル酸と多価アルコールとのエステル化物；エステルアクリレートオリゴマー；２−プロペニル−３−ブテニルシアヌレート、トリス（２−メタクリロキシエチル）イソシアヌレート等のイソシアヌレートまたはイソシアヌレート化合物等があげられる。放射線硬化型成分は、１種を単独で用いてもよいし、２種以上を混合して用いてもよい。   Next, in the radiation curable pressure-sensitive adhesive layer 5, the radiation curable component to be blended together with the resin composition containing the acrylic polymer is a characteristic that facilitates peeling of the dicing tape and the semiconductor during the pickup process. Is not particularly limited, but examples of monomer components and oligomer components include trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, tetraethylene glycol di (meth) acrylate, 1 , 6-Hexanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, dipentaerythritol hexa (meth) acrylate and other esterified products of (meth) acrylic acid and polyhydric alcohols; ester acrylate oligomers; 2 -Propeni 3-butenyl cyanurate, tris (2-methacryloxyethyl) isocyanurate or isocyanurate compounds such as isocyanurate and the like. One type of radiation curable component may be used alone, or two or more types may be mixed and used.

放射線硬化型成分の配合量は、特に制限されるものではないが、ピックアップ時、すなわち放射線照射後に、引き剥がし粘着力を低下させ、ＪＩＳ Ｚ０２３７に基づくＳＵＳ３０４に対する粘着力を、９０°引き剥がし試験を行ったときに１．０〜２．０Ｎ／２５ｍｍテープ幅とすることを考慮すると、アクリル系共重合体１００質量部に対して２５〜１５０質量部とするのが好ましい。放射線硬化型成分が少なすぎると、ピックアップ時に粘着力を十分に低下させることができず、放射線硬化成分が多すぎると、テープからのパッケージ脱離の原因となり、ピックアップ工程の際に周辺チップばらけが発生してしまう。 The blending amount of the radiation curable component is not particularly limited. However, at the time of pick-up, that is, after irradiation, the peeling adhesive strength is reduced, and the adhesive strength against SUS304 based on JIS Z0237 is peeled off by 90 °. Considering the tape width of 1.0 to 2.0 N / 25 mm when performed, the content is preferably 25 to 150 parts by mass with respect to 100 parts by mass of the acrylic copolymer. If there are too few radiation-curing components, the adhesive strength cannot be reduced sufficiently during pick-up, and if there are too many radiation-curing components, it will cause the package to be detached from the tape, and the peripheral chips will be scattered during the pick-up process. Will occur.

次に、前記のアクリル系重合体に、炭素−炭素二重結合を導入する場合について説明する。アクリル系重合体に、炭素−炭素二重結合を導入する方法としては、ポリマーの側鎖に官能基を有し、これと付加反応可能な官能基と炭素−炭素二重結合を有する化合物を付加させる方法が挙げられる。アクリル系重合体の側鎖に付加反応可能な官能基を有している化合物としては、付加反応の対象となる側鎖がカルボキシル基である場合には、グリシジルメタクリレートやアリルグリシジルエーテル等が挙げられ、付加反応の対象となる側鎖がエポキシ基である場合には、アクリル酸などが挙げられ、付加反応の対象となる側鎖が水酸基である場合には、２−メタクリロイルオキシエチルイソシアネートなどが挙げられる。   Next, the case where a carbon-carbon double bond is introduced into the acrylic polymer will be described. As a method for introducing a carbon-carbon double bond into an acrylic polymer, a compound having a functional group on the side chain of the polymer and an addition-reactive functional group and a carbon-carbon double bond is added. The method of letting it be mentioned. Examples of the compound having a functional group capable of addition reaction on the side chain of the acrylic polymer include glycidyl methacrylate and allyl glycidyl ether when the side chain to be subjected to the addition reaction is a carboxyl group. In the case where the side chain targeted for the addition reaction is an epoxy group, examples include acrylic acid, and in the case where the side chain targeted for the addition reaction is a hydroxyl group, examples include 2-methacryloyloxyethyl isocyanate. It is done.

以上のとおりの粘着剤層５には、例えば、多官能イソシアネート系化合物やエポキシ系化合物、メラミン系化合物や金属塩系化合物、金属キレート系化合物やアミノ樹脂系化合物や過酸化物などの適宜な架橋剤を硬化剤として含有させることができる。硬化剤は、それを介して粘着剤層を架橋するものであり、その含有量の調整により粘着剤層５の架橋密度を制御し、半導体加工用ダイシングテープ１の保持性を制御することができる。粘着剤層５における硬化剤の含有量は、とくに限定されないが、ベースポリマー１００質量部に対して０．１〜１０質量部とすることが好ましい。さらに、本発明に用いられる放射線硬化型の粘着剤には、必要に応じて、従来公知の各種の粘着付与剤、老化防止剤、充填剤、着色剤等の慣用の添加剤を含有させることが出来る。 For the pressure-sensitive adhesive layer 5 as described above, for example, an appropriate cross-link such as a polyfunctional isocyanate compound, an epoxy compound, a melamine compound, a metal salt compound, a metal chelate compound, an amino resin compound, or a peroxide is used. An agent can be contained as a curing agent. A hardening | curing agent bridge | crosslinks an adhesive layer through it, and can control the crosslinking density of the adhesive layer 5 by adjusting the content, and can control the holding property of the dicing tape 1 for semiconductor processing. . Although content of the hardening | curing agent in the adhesive layer 5 is not specifically limited, It is preferable to set it as 0.1-10 mass parts with respect to 100 mass parts of base polymers. Furthermore, the radiation-curable pressure-sensitive adhesive used in the present invention may contain conventional additives such as various conventionally known tackifiers, anti-aging agents, fillers, and colorants, if necessary. I can do it.

さらに、以上のとおりの放射線硬化型の粘着剤層５には、紫外線等により硬化させるための光重合開始剤を含有させてもよい。光重合開始剤としては、例えば、ベンゾインメチルエーチル、ベンゾインプロピルエーテル、ベンゾインイソプロピルエーテル、ベンゾインイソブチルエーテル等のベンゾインアルキルエーテル類；ベンジル、ベンゾイン、ベンゾフェノン、α−ヒドロキシシクロへキシルフェニルケトン類の芳香族ケトン類；べンジルジメチルケタール等の芳香族ケタ−ル類；ポリビニルベンゾフェノン、クロロチオキサントン、ドデシルチオキサントン、ジメチルチオキサントン、ジエチルチオキサントン等のチオキサントン類等があげられる。光重合開始剤の配合量についても、とくに限定されないが、粘着剤層５を構成するアクリル系重合体等のベースポリマー１００質量部に対して、例えば０．１〜１０質量部、好ましくは０．５〜１０質量部とすることができる。   Further, the radiation curable pressure-sensitive adhesive layer 5 as described above may contain a photopolymerization initiator for curing with ultraviolet rays or the like. Examples of the photopolymerization initiator include benzoin alkyl ethers such as benzoin methyl ether, benzoin propyl ether, benzoin isopropyl ether, and benzoin isobutyl ether; aromatics such as benzyl, benzoin, benzophenone, and α-hydroxycyclohexyl phenyl ketones Ketones; aromatic ketals such as benzyldimethyl ketal; thioxanthones such as polyvinylbenzophenone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, and diethylthioxanthone. The blending amount of the photopolymerization initiator is not particularly limited, but is 0.1 to 10 parts by mass, preferably 0.1 to 10 parts by mass with respect to 100 parts by mass of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive layer 5. It can be 5-10 mass parts.

なお、本発明の半導体加工用ダイシングテープ１において、放射線照射前の粘着剤層５を構成する樹脂組成物のガラス転移温度は、−３０〜−１０℃であることが望ましい。ガラス転移温度が低すぎると粘着剤の凝集力が低くなるため、パッケージのダイシング時に、粘着剤層５の巻上げが発生しやすくなり、個片化されたパッケージに糊玉が付着する場合がある。一方、ガラス転移温度が高すぎるとダイシング工程でのウェハの保持力が不足する場合があり、ウェハ飛散や、パッケージ飛びが発生して、製品の歩留まりが悪化しやすくなる場合がある。
そして、このようなガラス転移温度の範囲は、粘着剤層５を構成する樹脂組成物におけるベースポリマーのポリマー構造や分子量、配合される放射線硬化型成分、硬化剤、光重合開始剤、粘着付与剤、老化防止剤、充填剤、着色剤等の種類や量により、適宜調整される。 In addition, in the dicing tape 1 for semiconductor processing of this invention, it is desirable that the glass transition temperature of the resin composition constituting the pressure-sensitive adhesive layer 5 before radiation irradiation is −30 to −10 ° C. When the glass transition temperature is too low, the cohesive force of the pressure-sensitive adhesive is lowered, and therefore, the pressure-sensitive adhesive layer 5 is likely to be rolled up during dicing of the package, and the glue balls may adhere to the singulated package. On the other hand, if the glass transition temperature is too high, the holding power of the wafer in the dicing process may be insufficient, and the wafer yield and package jump may occur, and the product yield may easily deteriorate.
And the range of such a glass transition temperature is the polymer structure and molecular weight of the base polymer in the resin composition which comprises the adhesive layer 5, the radiation curable component mix | blended, a hardening | curing agent, a photoinitiator, a tackifier. Depending on the type and amount of anti-aging agent, filler, colorant, etc.

本発明の半導体加工用ダイシングテープ１は、基材フィルム３の表面に、粘着剤溶液を直接塗布し、乾燥、また必要に応じて加熱架橋させて、前記のとおりに粘着剤層を形成して得られるものである。このとき、半導体加工用ダイシングテープ１における粘着剤層５の厚さは、１０〜３０μｍであることが望ましい。粘着剤層５が１０μｍ未満の場合にはダイシング時に十分にウェハを保持することができず、粘着剤層５が３０μｍよりも厚い場合にはウェハのチッピングやパッケージ側面への糊残りが増大する。   The dicing tape 1 for semiconductor processing according to the present invention has a pressure-sensitive adhesive layer formed as described above by directly applying a pressure-sensitive adhesive solution to the surface of the base film 3 and drying and, if necessary, heat-crosslinking. It is obtained. At this time, the thickness of the pressure-sensitive adhesive layer 5 in the semiconductor processing dicing tape 1 is desirably 10 to 30 μm. If the pressure-sensitive adhesive layer 5 is less than 10 μm, the wafer cannot be held sufficiently during dicing, and if the pressure-sensitive adhesive layer 5 is thicker than 30 μm, chipping of the wafer and adhesive residue on the package side surface increase.

さらに、必要に応じてこの粘着剤層５の表面にセパレータ７を貼り合わせることにより、本発明の半導体加工用ダイシングテープ１を製造できる。あるいは、別途、セパレータ７に粘着剤層５を形成した後、それらを基材フィルム３に貼り合せる方法等を採用してもよい。さらに、これら粘着剤層５は、１層であってもよいし、２層以上が積層されたものであっても良い。   Furthermore, the dicing tape 1 for semiconductor processing of this invention can be manufactured by bonding the separator 7 on the surface of this adhesive layer 5 as needed. Or after forming the adhesive layer 5 in the separator 7 separately, you may employ | adopt the method of bonding them to the base film 3, etc. Furthermore, the pressure-sensitive adhesive layer 5 may be a single layer or a laminate of two or more layers.

なお、セパレータ７は、粘着剤層を保護する目的のため、ラベル加工のため、または、粘着剤を平滑にする目的のために、必要に応じて設けられるものである。セパレータ７の構成材料としては、紙、ポリエチレン、ポリプロピレン、ポリエチレンテレフタレート等の合成樹脂フィルムなどがあげられる。セパレータ７の表面には、粘着剤層５からの剥離性を高めるため、必要に応じてシリコーン処理、長鎖アルキル処理、フッ素処理等の剥離処理が施されていても良い。また、必要に応じて、半導体加工用ダイシングテープ１が環境紫外線によって反応してしまわないように、紫外線防止処理が施されていてもよい。セパレータ７の厚さは、通常１０〜２００μｍ、好ましくは２５〜１００μｍ程度とする。   The separator 7 is provided as necessary for the purpose of protecting the pressure-sensitive adhesive layer, for label processing, or for the purpose of smoothing the pressure-sensitive adhesive. Examples of the constituent material of the separator 7 include synthetic resin films such as paper, polyethylene, polypropylene, and polyethylene terephthalate. The surface of the separator 7 may be subjected to a peeling treatment such as silicone treatment, long-chain alkyl treatment, fluorine treatment, etc., as necessary, in order to enhance the peelability from the pressure-sensitive adhesive layer 5. Moreover, the ultraviolet-ray prevention process may be performed so that the dicing tape 1 for semiconductor processing may not react with environmental ultraviolet rays as needed. The thickness of the separator 7 is usually 10 to 200 μm, preferably about 25 to 100 μm.

以上のとおりの半導体加工用ダイシングテープ１は、シート状、ロ−ル状など、用途に応じて適宜な形状をとり得る。あらかじめ必要な形状に切断加工されたものを用いてもよい。   The semiconductor processing dicing tape 1 as described above can take an appropriate shape depending on the application, such as a sheet shape or a roll shape. You may use what was cut into a required shape in advance.

本発明の半導体加工用ダイシングテープ１は、被切断物である半導体部品へ貼り付けた後に、常法に従ってダイシングに供される。半導体部品としてはシリコン半導体、化合物半導体、半導体パッケージ、ガラス、セラミックス等があげられるが、本発明の半導体加工用ダイシングテープ１は、特に、半導体パッケージをダイシングする工程に用いられる。ダイシング工程では、一般に、ブレードを高速回転させ、被切断体を所定のサイズに切断する。本発明の半導体加工用ダイシングテープ１を使用することにより、ダイシング工程において半導体加工用ダイシングテープ１まで切込みを行なうフルカットと呼ばれる切断方式を採用することが可能となる。   The dicing tape 1 for semiconductor processing of the present invention is subjected to dicing according to a conventional method after being attached to a semiconductor component which is a workpiece. Examples of the semiconductor component include a silicon semiconductor, a compound semiconductor, a semiconductor package, glass, and ceramics. The semiconductor processing dicing tape 1 of the present invention is used particularly in a process of dicing a semiconductor package. In the dicing process, generally, the blade is rotated at a high speed to cut the object to be cut into a predetermined size. By using the semiconductor processing dicing tape 1 of the present invention, it is possible to adopt a cutting method called full cut in which cutting is performed up to the semiconductor processing dicing tape 1 in the dicing process.

ダイシング後は、通常、ピックアップ工程に供されるが、その前に放射線照射を行うことにより半導体加工用ダイシングテープ１における粘着剤層５を硬化させてその粘着性を低下させる。これにより、半導体部品の半導体加工用ダイシングテープ１からの剥離が容易となる。なお、ピックアップ工程には、エキスパンド工程を設けることができる。また、放射線照射の手段は特に限定されないが、例えば、紫外線照射等により行うことができる。   After dicing, it is usually subjected to a pick-up process, but by performing irradiation before that, the pressure-sensitive adhesive layer 5 in the dicing tape 1 for semiconductor processing is cured to lower its adhesiveness. Thereby, peeling from the dicing tape 1 for semiconductor processing of a semiconductor component becomes easy. The pickup process can be provided with an expanding process. The means for radiation irradiation is not particularly limited, and can be performed by, for example, ultraviolet irradiation.

以下、本発明を実施例に基づきさらに詳細に説明するが、本発明はこれら実施例に限定されるものではない。   EXAMPLES Hereinafter, although this invention is demonstrated further in detail based on an Example, this invention is not limited to these Examples.

〔基材フィルム〕
基材フィルムとして、厚さ１５０μｍの直鎖状低密度ポリエチレンを使用した。このフィルムの片面にはコロナ処理を施した。
〔アクリル系重合体〕
・ベースポリマーＡ〜Ｅ
アクリル酸メチル、アクリル酸２−エチルヘキシル、メタクリル酸、アクリル酸２−ヒドロキシエチルを原料として、下記の表１に示した配合比（質量部）で重合を行ない、アクリル系重合体を含有するベースポリマーを得た。
・ベースポリマーＦ〜Ｈ
アクリル酸メチル、アクリル酸２−エチルヘキシル、メタクリル酸、アクリル酸２−ヒドロキシエチルを原料として、下記表１に示した配合比（質量部）で重合を行なった。さらに、２−メタクリロイルオキシエチルイソシアネートを付加反応させることで、側鎖末端に炭素−炭素二重結合を有するアクリル系ベースポリマーを得た。 [Base film]
A linear low density polyethylene having a thickness of 150 μm was used as the base film. One side of this film was corona treated.
[Acrylic polymer]
・ Base polymers A to E
Base polymer containing acrylic polymer, polymerized with methyl acrylate, 2-ethylhexyl acrylate, methacrylic acid, 2-hydroxyethyl acrylate as raw materials at the blending ratio (parts by mass) shown in Table 1 below. Got.
・ Base polymer F ~ H
Polymerization was performed using methyl acrylate, 2-ethylhexyl acrylate, methacrylic acid, and 2-hydroxyethyl acrylate as raw materials at a blending ratio (parts by mass) shown in Table 1 below. Furthermore, an acrylic base polymer having a carbon-carbon double bond at the end of the side chain was obtained by addition reaction of 2-methacryloyloxyethyl isocyanate.

さらに、ベースポリマー１００質量部に対して、ポリイソシアネートとして日本ポリウレンタン社製のコロネートＬ（商品名）を１質量部、光重合開始剤として日本チバガイギー社製のイルガキュアー１８４（商品名）（α−ヒドロキシシクロヘキシルフェニルケトン）を５．０質量部加えて混合し、粘着剤層を構成する樹脂組成物を調製した。   Furthermore, with respect to 100 parts by mass of the base polymer, 1 part by mass of Coronate L (trade name) manufactured by Nippon Polyurentane Co., Ltd. as the polyisocyanate, and Irgacure 184 (trade name) manufactured by Ciba Geigy Co., Ltd. as the photopolymerization initiator (α- 5.0 parts by mass of hydroxycyclohexyl phenyl ketone) was added and mixed to prepare a resin composition constituting the pressure-sensitive adhesive layer.

Figure 0005053455
Figure 0005053455

＜実施例１＞
ベースポリマーＢ１００質量部に対して、ペンタエリスリトールトリアクリレートとジイソシアネートを反応させて得た放射線硬化型オリゴマー（炭素−炭素二重結合の１分子当たりの平均含有量６個）５０質量部、硬化剤としてポリイソシアネート化合物（日本ポリウレタン社製、商品名コロネートＬ）を２質量部、光重合開始剤として（チバ・スペシャルティー・ケミカルズ製、商品名イルガキュア６５１）を３質量部の配合比で混合し、粘着剤組成物を得た。
得られた粘着剤組成物を、基材フィルムのコロナ処理面に厚さ２０μｍとなるように塗工し、半導体加工用ダイシングテープを作成した。 <Example 1>
As a curing agent, 50 parts by mass of radiation curable oligomer (average content of 6 carbon-carbon double bonds per molecule) obtained by reacting pentaerythritol triacrylate and diisocyanate with 100 parts by mass of base polymer B A polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name: Coronate L) is mixed in an amount of 2 parts by mass, and a photopolymerization initiator (manufactured by Ciba Specialty Chemicals, trade name: Irgacure 651) is mixed at a blending ratio of 3 parts by mass. An agent composition was obtained.
The obtained pressure-sensitive adhesive composition was applied to the corona-treated surface of the base film so as to have a thickness of 20 μm, thereby preparing a dicing tape for semiconductor processing.

＜実施例２＞
粘着剤組成物におけるベースポリマーをＣに変えた以外は、実施例１と同様にして半導体加工用ダイシングテープを得た。 <Example 2>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 1 except that the base polymer in the pressure-sensitive adhesive composition was changed to C.

＜実施例３＞
放射線硬化型オリゴマーの配合比を２５質量部に変えた以外は、実施例２と同様にして半導体加工用ダイシングテープを得た。 <Example 3>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 2 except that the blending ratio of the radiation curable oligomer was changed to 25 parts by mass.

＜実施例４＞
粘着剤組成物におけるベースポリマーをＤに変え、Ｄ１００質量部に対する放射線硬化型オリゴマーの配合比を１００質量部に変えた以外は、実施例１と同様の方法により半導体加工用ダイシングテープを得た。 <Example 4>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 1 except that the base polymer in the pressure-sensitive adhesive composition was changed to D and the blending ratio of the radiation curable oligomer to 100 parts by mass of D was changed to 100 parts by mass.

＜実施例５＞
放射線硬化型オリゴマーの配合比を５０質量部に変えた以外は、実施例４と同様にして半導体加工用ダイシングテープを得た。 <Example 5>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 4 except that the blending ratio of the radiation curable oligomer was changed to 50 parts by mass.

＜実施例６＞
放射線硬化型オリゴマーの配合比を２５質量部に変えた以外は、実施例４同様にして半導体加工用ダイシングテープを得た。 <Example 6>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 4 except that the blending ratio of the radiation curable oligomer was changed to 25 parts by mass.

＜実施例７＞
ベースポリマーＧ１００質量部に対して、硬化剤としてポリイソシアネート化合物（日本ポリウレタン社製、商品名コロネートＬ）を２質量部、光重合開始剤（チバ・スペシャルティー・ケミカルズ製、商品名イルガキュア６５１）を３質量部の配合比で混合して粘着剤組成物を得た。
得られた粘着剤組成物を、基材フィルムのコロナ処理面に厚さ２０μｍとなるように塗工し、半導体加工用ダイシングテープを作成した。 <Example 7>
2 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name Coronate L) as a curing agent, and a photopolymerization initiator (manufactured by Ciba Specialty Chemicals, trade name: Irgacure 651) with respect to 100 parts by mass of the base polymer G The mixture was mixed at a blending ratio of 3 parts by mass to obtain an adhesive composition.
The obtained pressure-sensitive adhesive composition was applied to the corona-treated surface of the base film so as to have a thickness of 20 μm, thereby preparing a dicing tape for semiconductor processing.

＜実施例８＞
粘着剤組成物におけるベースポリマーをＨに変えた以外は、実施例７と同様にして半導体加工用ダイシングテープを得た。 <Example 8>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the base polymer in the pressure-sensitive adhesive composition was changed to H.

＜実施例９＞
粘着剤層の厚さを１０μｍに変えた以外は、実施例７と同様にして半導体加工用ダイシングテープを得た。 <Example 9>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the thickness of the pressure-sensitive adhesive layer was changed to 10 μm.

＜実施例１０＞
粘着剤層の厚さを３０μｍに変えた以外は、実施例７と同様にして半導体加工用ダイシングテープを得た。 <Example 10>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the thickness of the pressure-sensitive adhesive layer was changed to 30 μm.

＜比較例１＞
粘着剤組成物におけるベースポリマーをＡとし、Ａ１００質量部に対する放射線硬化型オリゴマーの配合比を１００質量部に変えた以外は、実施例１と同様にして半導体加工用ダイシングテープを得た。 <Comparative Example 1>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 1 except that the base polymer in the pressure-sensitive adhesive composition was A, and the blending ratio of the radiation curable oligomer to 100 parts by mass of A was changed to 100 parts by mass.

＜比較例２＞
放射線硬化型オリゴマーの配合比を５０質量部に変えた以外は、比較例１と同様にして半導体加工用ダイシングテープを得た。 <Comparative example 2>
A dicing tape for semiconductor processing was obtained in the same manner as in Comparative Example 1 except that the blending ratio of the radiation curable oligomer was changed to 50 parts by mass.

＜比較例３＞
放射線硬化型オリゴマーの配合比を２５質量部に変えた以外は、比較例１と同様にして半導体加工用ダイシングテープを得た。 <Comparative Example 3>
A dicing tape for semiconductor processing was obtained in the same manner as in Comparative Example 1 except that the blending ratio of the radiation curable oligomer was changed to 25 parts by mass.

＜比較例４＞
粘着剤組成物におけるベースポリマーをＢとし、Ｂ１００質量部に対する放射線硬化型オリゴマーの配合比を１００質量部に変えた以外は、実施例１と同様にして半導体加工用ダイシングテープを得た。 <Comparative example 4>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 1 except that the base polymer in the pressure-sensitive adhesive composition was B and the blending ratio of the radiation curable oligomer to 100 parts by mass of B was changed to 100 parts by mass.

＜比較例５＞
放射線硬化型オリゴマーの配合比を２５質量部に変えた以外は、比較例４と同様にして半導体加工用ダイシングテープを得た。 <Comparative Example 5>
A dicing tape for semiconductor processing was obtained in the same manner as in Comparative Example 4 except that the blending ratio of the radiation curable oligomer was changed to 25 parts by mass.

＜比較例６＞
ベースポリマーＣ１００質量部に対する放射線硬化型オリゴマーの配合比を１００質量部に変えた以外は、実施例２と同様にして半導体加工用ダイシングテープを得た。 <Comparative Example 6>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 2 except that the blending ratio of the radiation curable oligomer to 100 parts by mass of the base polymer C was changed to 100 parts by mass.

＜比較例７＞
粘着剤組成物におけるベースポリマーをＥに変え、Ｅ１００質量部に対する放射線硬化型オリゴマーの配合比を１００質量部に変えた以外は、実施例１同様にして半導体加工用ダイシングテープを得た。 <Comparative Example 7>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 1 except that the base polymer in the pressure-sensitive adhesive composition was changed to E and the blending ratio of the radiation curable oligomer to 100 parts by mass of E was changed to 100 parts by mass.

＜比較例８＞
放射線硬化型オリゴマーの配合比を２５質量部に変えた以外は、比較例７同様にして半導体加工用ダイシングテープを得た。 <Comparative Example 8>
A dicing tape for semiconductor processing was obtained in the same manner as in Comparative Example 7 except that the blending ratio of the radiation curable oligomer was changed to 25 parts by mass.

＜比較例９＞
ベースポリマーＦ１００質量部に対して、硬化剤としてポリイソシアネート化合物（日本ポリウレタン社製、商品名コロネートＬ）を２質量部、光重合開始剤（チバ・スペシャルティー・ケミカルズ製、商品名イルガキュア６５１）を３質量部の配合比で混合し、粘着剤組成物を得た。
得られた粘着剤組成物を、基材フィルムのコロナ処理面に厚さ２０μｍとなるように塗工し、半導体加工用ダイシングテープを作成した。 <Comparative Example 9>
2 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name Coronate L) as a curing agent, and a photopolymerization initiator (manufactured by Ciba Specialty Chemicals, trade name: Irgacure 651) with respect to 100 parts by mass of the base polymer F The mixture was mixed at a blending ratio of 3 parts by mass to obtain an adhesive composition.
The obtained pressure-sensitive adhesive composition was applied to the corona-treated surface of the base film so as to have a thickness of 20 μm, thereby preparing a dicing tape for semiconductor processing.

＜比較例１０＞
粘着剤層の厚さを７μｍに変えた以外は、実施例７と同様にして半導体加工用ダイシングテープを得た。 <Comparative Example 10>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the thickness of the pressure-sensitive adhesive layer was changed to 7 μm.

＜比較例１１＞
粘着剤層の厚さを３３μｍに変えた以外は、実施例７と同様にして半導体加工用ダイシングテープを得た。 <Comparative Example 11>
A dicing tape for semiconductor processing was obtained in the same manner as in Example 7 except that the thickness of the pressure-sensitive adhesive layer was changed to 33 μm.

上記実施例および比較例で得られた半導体加工用ダイシングテープについて、以下の評価を行った。実施例についての評価結果を表２、比較例についての評価結果を表３に示した。   The following evaluation was performed about the dicing tape for semiconductor processing obtained by the said Example and comparative example. The evaluation results for the examples are shown in Table 2, and the evaluation results for the comparative examples are shown in Table 3.

〔試験１：粘着力測定（放射線照射前）〕
各半導体加工用ダイシングテープから幅２５ｍｍ×長さ３００ｍｍの試験片を３点採取し、それらをＪＩＳ Ｒ ６２５３に規定する２８０番の耐水研磨紙で仕上げたＪＩＳ Ｇ ４３０５に規定する厚さ１．５ｍｍ〜２．０ｍｍのＳＵＳ３０４鋼板上に貼着した後、２ｋｇのゴムローラを３往復かけて圧着し、１時間放置後、測定値がその容量の１５〜８５％の範囲に入るＪＩＳ Ｂ ７７２１に適合する引張試験機を用いて粘着力を測定した。測定は、９０°引き剥がし法によるものとし、この時の引張速さは５０ｍｍ／ｍｉｎとした。測定温度は２３℃、測定湿度は４９％であった。 [Test 1: Adhesive strength measurement (before irradiation)]
Three test pieces each having a width of 25 mm and a length of 300 mm were taken from each semiconductor processing dicing tape, and finished with 280 No. 280 water-resistant abrasive paper specified in JIS R 6253, and the thickness specified in JIS G 4305 was 1.5 mm. After being stuck on a SUS304 steel plate of ~ 2.0 mm, a 2 kg rubber roller is pressure-bonded by 3 reciprocations, and after standing for 1 hour, it conforms to JIS B 7721 where the measured value falls within the range of 15 to 85% of its capacity. The adhesive strength was measured using a tensile tester. The measurement was performed by a 90 ° peeling method, and the tensile speed at this time was 50 mm / min. The measurement temperature was 23 ° C. and the measurement humidity was 49%.

〔試験２：粘着力測定（放射線照射後）〕
試験１と同様の方法で作成した試料に、２００ｍＪ／ｃｍ２で紫外線照射を行い、照射後１時間放置し、試験１と同様の方法で粘着力を測定した。 [Test 2: Measurement of adhesive strength (after irradiation)]
A sample prepared in the same manner as in Test 1 was irradiated with ultraviolet rays at 200 mJ / cm 2 , left for 1 hour after irradiation, and the adhesive strength was measured in the same manner as in Test 1.

〔試験３：タックピーク強度測定（放射線照射前）〕
各半導体加工用ダイシングテープから幅２５ｍｍ×長さ３００ｍｍの試験片を３点採取し、被着体側の粘着剤層のプローブタックのピーク強度を、（株）レスカ社製、タッキング試験機、ＴＡＣ−ＩＩ型を用いて測定した。測定条件は以下のとおりである。 [Test 3: Tack peak intensity measurement (before irradiation)]
Three test pieces each having a width of 25 mm and a length of 300 mm were taken from each semiconductor processing dicing tape, and the peak strength of the probe tack of the adhesive layer on the adherend side was measured by the Reska Co., Ltd., tacking tester, TAC- Measurement was made using type II. The measurement conditions are as follows.

プローブ ： ３ｍｍφの円柱型
プローブの接触速さ ： ０．５ｍｍ／ｓ
接触荷重 ： ６９４ｍＮ／ｍｍ２
接触時間 ： １０秒
引き剥がし速さ ： １０ｍ ｍ／ｓ
測定温度 ： ２５℃
結果は、ｎ＝５の平均値とした。 Probe: Contact speed of cylindrical probe of 3 mmφ: 0.5 mm / s
Contact load: 694 mN / mm 2
Contact time: 10 seconds Peeling speed: 10 mm / s
Measurement temperature: 25 ° C
The result was an average value of n = 5.

〔試験４：タックピーク強度(放射線照射後・大気雰囲気下)〕
試験３と同様の方法で作成した試料に、大気雰囲気下で高圧水銀灯にて２００ｍＪ／ｃｍ２の紫外線照射を行い、照射後１時間放置し、試験３と同様の方法でプローブタックのピーク強度を評価した。 [Test 4: Tack peak intensity (after irradiation and in air)]
A sample prepared in the same manner as in test 3 was irradiated with 200 mJ / cm 2 of ultraviolet light in a high-pressure mercury lamp in an air atmosphere and left for 1 hour after irradiation. The peak intensity of the probe tack was measured in the same manner as in test 3. evaluated.

〔試験５：粘着剤のガラス転移温度（Ｔｇ）測定〕
放射線照射前の半導体加工用ダイシングテープをメタノールに浸漬し、粘着剤層を膨潤させた後、片刃で基材フィルムから粘着剤組成物を剥離した。得られた粘着剤組成物をアルミ容器に入れて、（株）セイコーインスツルメンツ社製、示差走査熱量計（ＤＳＣ）、ＲＤＣ２２０型を用いてガラス転移温度を測定した。測定条件は以下のとおりである。 [Test 5: Glass transition temperature (Tg) measurement of adhesive]
The semiconductor processing dicing tape before irradiation was immersed in methanol to swell the pressure-sensitive adhesive layer, and then the pressure-sensitive adhesive composition was peeled from the base film with a single blade. The obtained pressure-sensitive adhesive composition was put in an aluminum container, and the glass transition temperature was measured using a differential scanning calorimeter (DSC) and RDC220 type manufactured by Seiko Instruments Inc. The measurement conditions are as follows.

温度範囲 ：−９０〜６０℃
昇温度速度 ：１０℃／ｍｉｎ
重量 ：１０ｍｇ
Ｎ２ガス流量 ：４０ｍｌ／ｍｉｎ
リファレンス ：Ａｌ２Ｏ３ Temperature range: -90-60 ° C
Temperature increase rate: 10 ° C / min
Weight: 10mg
N 2 gas flow rate: 40 ml / min
Reference: Al 2 O 3

〔評価１：ダイシング時保持力試験〕
０．５ｍｍ厚、１９１ｍｍ×５１ｍｍの銅リードフレーム基板パッケージを、各半導体加工用ダイシングテープに２３℃、５０％ＲＨの条件下で貼合し、テープ貼合から１時間経過後、３ｍｍ×３ｍｍ□に切断した。ダイシング条件は以下のとおりである。 [Evaluation 1: Holding power test during dicing]
A 0.5mm thick, 191mm x 51mm copper lead frame substrate package was bonded to each semiconductor processing dicing tape under conditions of 23 ° C and 50% RH, and after 1 hour from tape bonding, 3mm x 3mm □ Disconnected. The dicing conditions are as follows.

ダイシング装置 ：ＤＩＳＣＯ社製 ＤＡＤ−３４０
ブレード ：ＤＩＳＣＯ社製メタルボンドブレード
（Ｂ１Ａ８０１ＳＤ ３２０Ｎ１００Ｍ４２、
内径４０ｍｍ、外径５８ｍｍ、厚さ０．２ｍｍ）
ブレード回転数 ：３００００ｒｐｍ
切削速度 ：５０ｍｍ／ｓｅｃ
テープ切り込み深さ：０．０８ｍｍ
切削水量 ：流量２Ｌ／ｍｉｎ
切削水温度 ：２３℃ Dicing machine: DAD-340 manufactured by DISCO
Blade: Metal bond blade manufactured by DISCO
(B1A801SD 320N100M42,
(Inner diameter 40mm, outer diameter 58mm, thickness 0.2mm)
Blade rotation speed: 30000 rpm
Cutting speed: 50 mm / sec
Tape cutting depth: 0.08mm
Cutting water volume: Flow rate 2L / min
Cutting water temperature: 23 ° C

ダイシング後にリングフレームを目視で確認し、個片化したパッケージが５つ以上無くなっている場合には「×」、１つ以上かつ４つ以下で無くなっている場合には「△」、無くなっていなければ「○」と評価した。   After dicing, visually check the ring frame. If there are 5 or more singulated packages, “X”; if more than 1 and 4 or less, “△”; Was rated as “◯”.

〔評価２：放射線照射後保持力試験（チップばらけ）〕
評価１のダイシング後、高圧水銀灯にて２００ｍＪ／ｃｍ２で紫外線照射を行い、個片化されたパッケージをピックアップした。ピックアップ条件は以下のとおりである。 [Evaluation 2: Holding power test after irradiation (chip breaking)]
After dicing in Evaluation 1, ultraviolet irradiation was performed at 200 mJ / cm 2 with a high-pressure mercury lamp, and the separated package was picked up. The pickup conditions are as follows.

ピックアップ装置 ：キャノンマシナリー社製ＣＡＰ−３００ＩＩ
突き上げピン形状 ：半径０．７ｍｍ、先端曲率半径Ｒ＝０．２５ｍｍ、
先端θ＝１５
ピン突き上げ高さ ：１ｍｍ
ピン突き上げスピード：５０ｍｍ／ｓｅｃ
コレット形状 ：吸着穴０．８９ｍｍφ
リングフレーム ：ＤＩＳＣＯ社製 型式ＤＴＦ−２−６−１（ＳＵＳ４２０Ｊ２製） Pickup device: CAP-300II manufactured by Canon Machinery
Push pin shape: radius 0.7 mm, tip curvature radius R = 0.25 mm,
Tip θ = 15
Pin push-up height: 1mm
Pin push-up speed: 50mm / sec
Collet shape: Suction hole 0.89mmφ
Ring frame: Model DTF-2-6-1 manufactured by DISCO (manufactured by SUS420J2)

上記条件にて個片化したパッケージを５０個ピックアップし、ピックアップ箇所周辺のチップばらけを目視にて確認した。ピックアップ箇所周辺のチップ配列の乱れ、飛散が認められないものを「○」、配列の乱れがあったがチップが粘着テープ上に留まり回収可能であったものを「△」、粘着テープ外に飛散したものを「×」と評価した。 Fifty packages separated into pieces under the above conditions were picked up, and chip scattering around the pick-up location was visually confirmed. “○” indicates that the chip arrangement around the pickup location is not disturbed or scattered, “○” indicates that the arrangement is disordered but the chip remains on the adhesive tape and can be recovered “△”, and splashes outside the adhesive tape. What was done was evaluated as "x".

〔評価３：トレーへの付着性〕
評価２にて個片化したパッケージを５０個ピックアップし、ピックアップしたパッケージがＡＢＳ樹脂製のトレーに付着し、トレーを逆さにしても落下しないパッケージの数をカウントした。付着したパッケージが１個も無ければ「○」、１つ以上かつ１０個未満の場合には「△」、１０個以上の場合には「×」と評価した。 [Evaluation 3: Adhesion to tray]
The number of packages separated in evaluation 2 was picked up, and the number of packages that were picked up adhered to the ABS resin tray and did not fall even when the tray was inverted was counted. When there was no attached package, it was evaluated as “◯”, when it was 1 or more and less than 10 “Δ”, and when it was 10 or more, it was evaluated as “x”.

Figure 0005053455
Figure 0005053455

Figure 0005053455
Figure 0005053455

表２より、半導体加工用ダイシングテープにおいて、粘着剤層の厚さが１０〜３０μｍであって、粘着剤層の放射線照射後の粘着力が、９０°引き剥がし試験を行ったときに１．０〜２．０Ｎ／２５ｍｍテープ幅であり、さらに大気雰囲気下条件での放射線照射後のプローブタックのピーク強度が５０〜１５０ｍＮ／ｍｍ２である場合（実施例１〜１０）、ダイシング時にはパッケージに対する高い保持力が得られ、放射線照射後にパッケージをピックアップしてもばらけが生じないことが確認された。さらに、ピックアップされたパッケージは、トレーに付着することもなかった。これは、本発明の半導体加工用ダイシングテープにおける粘着剤層が、ダイシングの際に個片化されたパッケージに糊玉を残しにくく、かつ、糊玉が付着した場合でも、ピックアップ前に放射線照射を行うことにより、粘着剤層が適度な粘着力を保持しながら硬化したためと考えられる。
なお、粘着剤層が、ベースポリマーとしてアクリル系重合体を含有する樹脂組成物から構成される放射線硬化型のものであれば、アクリル系重合体を含有する樹脂組成物に、放射線硬化型成分を配合したもの（実施例１〜６）であっても、アクリル系重合体を基本骨格とし、炭素−炭素二重結合をポリマーの側鎖または主鎖中もしくは主鎖末端に有するもの（実施例７〜１０）であっても同様の結果が得られた。 From Table 2, in the dicing tape for semiconductor processing, the thickness of the pressure-sensitive adhesive layer is 10 to 30 μm, and the pressure-sensitive adhesive force after irradiation of the pressure-sensitive adhesive layer is 1.0 when the 90 ° peeling test is performed. When the peak intensity of the probe tack after irradiation with radiation under atmospheric conditions is 50 to 150 mN / mm 2 (Examples 1 to 10), it is high for the package during dicing. Holding power was obtained, and it was confirmed that no looseness occurred even when the package was picked up after irradiation. Further, the picked up package did not adhere to the tray. This is because the adhesive layer in the dicing tape for semiconductor processing according to the present invention does not easily leave glue balls on the package that has been singulated during dicing, and even when the paste balls adhere, radiation is applied before pick-up. This is probably because the pressure-sensitive adhesive layer was cured while maintaining an appropriate pressure-sensitive adhesive force.
If the pressure-sensitive adhesive layer is of a radiation curable type composed of a resin composition containing an acrylic polymer as a base polymer, a radiation curable component is added to the resin composition containing the acrylic polymer. Even those blended (Examples 1 to 6) having an acrylic polymer as a basic skeleton and having a carbon-carbon double bond in the side chain or main chain or at the end of the main chain of the polymer (Example 7) -10), similar results were obtained.

一方、半導体加工用ダイシングテープにおいて、粘着剤層の厚さが１０〜３０μｍであっても、粘着剤層の放射線照射後の粘着力が、９０°引き剥がし試験を行ったときに１．０Ｎ／２５ｍｍテープ幅未満であった場合（比較例１、４、６、７、９）には、ピックアップ工程後にトレーへの付着は見られないものの、チップばらけが多くみられた。これは、放射線照射により、粘着剤層の硬化が進み、ピックアップに必要な粘着力が維持されず、ピックアップ不良が生じたためと考えられる。   On the other hand, in the dicing tape for semiconductor processing, even if the thickness of the pressure-sensitive adhesive layer is 10 to 30 μm, the pressure-sensitive adhesive strength after irradiation of the pressure-sensitive adhesive layer is 1.0 N / When the tape width was less than 25 mm (Comparative Examples 1, 4, 6, 7, and 9), no sticking to the tray was observed after the pick-up process, but many chips were scattered. This is thought to be because the adhesive layer hardened by radiation irradiation, the adhesive force required for pickup was not maintained, and pickup failure occurred.

また、粘着剤層の放射線照射後の粘着力が、９０°引き剥がし試験を行ったときに２．０Ｎ／２５ｍｍテープ幅を超えた場合（比較例３、５、８）には、チップばらけは見られなかったものの、ピックアップ工程後のパッケージのトレーへの付着が多くなった。これは、放射線照射後も粘着剤層の硬化が十分に進まず、粘着力が高すぎる状態のままピックアップ工程に至ったことを示す。   In addition, when the adhesive strength after irradiation of the adhesive layer exceeds the 2.0 N / 25 mm tape width when the 90 ° peel test is performed (Comparative Examples 3, 5, and 8), the chips are separated. Although not observed, the adhesion of the package to the tray after the pick-up process increased. This indicates that the pressure-sensitive adhesive layer did not sufficiently cure even after irradiation, and the pickup process was reached with the adhesive force being too high.

さらに、粘着剤層の、大気雰囲気下条件での放射線照射後のプローブタックのピーク強度が５０ｍＮ／ｍｍ２未満の場合（比較例６、７）には、ピックアップ工程におけるチップばらけが見られた。これは、放射線照射により粘着剤層の硬化が進行し、十分なタックが得られず、ピックアップ不良が生じたためと考えられる。一方、大気雰囲気下条件での放射線照射後のプローブタックのピーク強度が１５０ｍＮ／ｍｍ２を超えた場合（比較例２、３、５、１１）には、ピックアップ工程後にパッケージのトレーへの付着が多く発生した。これは、放射線照射後も粘着剤層の硬化が十分に進行せず、タックが高すぎる状態であったために、パッケージに付着した糊玉により、パッケージが強固にトレーへ貼着したためと考えられる。 Furthermore, when the peak strength of the probe tack after irradiation of the pressure-sensitive adhesive layer under atmospheric conditions was less than 50 mN / mm 2 (Comparative Examples 6 and 7), chip dispersion in the pickup process was observed. This is considered to be because the curing of the pressure-sensitive adhesive layer progressed due to irradiation, and sufficient tack was not obtained, resulting in pickup failure. On the other hand, if the peak intensity of the probe tack after radiation irradiation under atmospheric conditions exceeds 150 mN / mm 2 (Comparative Examples 2, 3, 5, and 11), the package adheres to the tray after the pick-up process. Many occurred. This is presumably because the adhesive layer was not sufficiently cured even after irradiation and the tack was too high, so that the package was firmly attached to the tray by the glue balls attached to the package.

なお、粘着剤層の放射線照射後の粘着力が、９０°引き剥がし試験を行ったときに１．０〜２．０Ｎ／２５ｍｍテープ幅であり、かつ、大気雰囲気下条件での放射線照射後のプローブタックのピーク強度が５０〜１５０ｍＮ／ｍｍ２である場合でも、粘着剤層の厚さが１０μｍ未満である場合（比較例１０）には、ダイシング時にパッケージの飛散が確認された。したがって、ダイシング時に十分な保持性を得るためには、１０μｍ以上の粘着剤層の厚さが必要となることが示された。 In addition, the adhesive strength after irradiation of the adhesive layer is 1.0 to 2.0 N / 25 mm tape width when the 90 ° peeling test is performed, and after irradiation with radiation under atmospheric conditions. Even when the peak intensity of the probe tack was 50 to 150 mN / mm 2 , scattering of the package was confirmed during dicing when the thickness of the pressure-sensitive adhesive layer was less than 10 μm (Comparative Example 10). Therefore, it was shown that the thickness of the pressure-sensitive adhesive layer of 10 μm or more is required in order to obtain sufficient retention during dicing.

また、粘着剤層の放射線照射前の粘着力が、９０°引き剥がし試験を行ったときに５．０Ｎ／２５ｍｍテープ幅未満であるか、または、放射線照射前のプローブタックのピーク強度が２５０ｍＮ／ｍｍ２未満である場合（比較例１、２、３、７、８、１０）には、ダイシング時にパッケージが十分に保持されないことが確認された。とくに、粘着剤層の放射線照射前の粘着力が、９０°引き剥がし試験を行ったときに５．０〜１０．０Ｎ／２５ｍｍテープ幅の範囲であったり（比較例７、１０）、１０．０Ｎ／２５ｍｍテープ幅を超えていたりする場合（比較例８）でも、放射線照射前のプローブタックのピーク強度が２５０ｍＮ／ｍｍ２未満であれば、ダイシング時の保持性が不十分となり、本発明の半導体加工用ダイシングテープより劣った。 Also, the adhesive strength of the adhesive layer before irradiation is less than 5.0 N / 25 mm tape width when the 90 ° peel test is performed, or the peak strength of the probe tack before irradiation is 250 mN / When it was less than mm 2 (Comparative Examples 1, 2, 3, 7, 8, 10), it was confirmed that the package was not sufficiently held during dicing. In particular, the adhesive strength of the pressure-sensitive adhesive layer before irradiation is in the range of 5.0 to 10.0 N / 25 mm tape width when a 90 ° peel test is performed (Comparative Examples 7 and 10). Even when the tape width exceeds 0 N / 25 mm (Comparative Example 8), if the peak intensity of the probe tack before radiation irradiation is less than 250 mN / mm 2 , the retention during dicing becomes insufficient, and Inferior to dicing tape for semiconductor processing.

また、ベースポリマーに放射線硬化型オリゴマーを添加した粘着剤組成物を用いる実施例１〜６、比較例１〜８を、粘着剤のガラス転移温度を横軸にし、放射線照射前の粘着力及びタックピーク強度をプロットすると、ガラス転移温度が高くなるほど、放射線照射前の粘着力が強くなり、タックピーク強度が弱くなるという相関があることがわかった。特に、オリゴマー配合割合が２５質量部の実施例３、実施例６、比較例３、比較例５、比較例８を比較する場合や、オリゴマー配合割合が５０質量部の実施例１、実施例２、実施例５、比較例２を比較する場合、オリゴマー配合割合が１００質量部の実施例４、比較例１、比較例４、比較例６、比較例７を比較する場合に、この相関が明確である。   Further, Examples 1 to 6 and Comparative Examples 1 to 8 using the pressure-sensitive adhesive composition in which the radiation curable oligomer is added to the base polymer, the glass transition temperature of the pressure-sensitive adhesive as the horizontal axis, the pressure-sensitive adhesive force and tack before irradiation. When the peak intensity was plotted, it was found that there was a correlation that the higher the glass transition temperature, the stronger the adhesive strength before irradiation and the weaker the tack peak intensity. In particular, when comparing Example 3, Example 6, Comparative Example 3, Comparative Example 5, and Comparative Example 8 in which the oligomer blending ratio is 25 parts by mass, or Example 1 and Example 2 in which the oligomer blending ratio is 50 parts by mass. When comparing Example 5 and Comparative Example 2, this correlation is clear when comparing Example 4, Comparative Example 1, Comparative Example 4, Comparative Example 6, and Comparative Example 7 with an oligomer blending ratio of 100 parts by mass. It is.

以上、本発明の好ましい実施形態について説明したが、本発明は係る例に限定されるものではない。当業者であれば、本願で開示した技術的思想の範疇内において、各種の変更例または修正例に想到しえることは明らかであり、それらについても当然に本発明の技術的範囲に属するものと了解される。   As mentioned above, although preferable embodiment of this invention was described, this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the technical idea disclosed in the present application, and these are naturally within the technical scope of the present invention. Understood.

１………半導体ウェハ加工用粘着テープ
３………基材フィルム
５………粘着剤層
７………セパレータ DESCRIPTION OF SYMBOLS 1 ......... Adhesive tape 3 for semiconductor wafer processing ......... Base film 5 ......... Adhesive layer 7 ......... Separator

Claims (1)

半導体パッケージをダイシングする工程において使用される半導体加工用ダイシングテープであって、
基材フィルムの少なくとも片面に、放射線硬化型の粘着剤層が形成されて成り、
前記粘着剤層は、ベースポリマーとして、アクリル酸メチルおよびアクリル酸２−エチルへキシルをモノマー成分として含有するアクリル系重合体を含有する樹脂組成物から構成され、
前記樹脂組成物のガラス転移温度が−３０〜−１１℃であり、
前記粘着剤層の厚さは、１０〜３０μｍであり、
前記粘着剤層の、ＪＩＳ Ｚ０２３７に基づくＳＵＳ３０４に対する放射線照射後の粘着力が、９０°引き剥がし試験を行ったときに１．０〜１．９Ｎ／２５ｍｍテープ幅であり、
前記粘着剤層の、大気雰囲気下条件での放射線照射後のプローブタックのピーク強度が５４〜１４８ｍＮ／ｍｍ２であり、
前記粘着剤層の、ＪＩＳ Ｚ０２３７に基づくＳＵＳ３０４に対する放射線照射前の粘着力が、９０°引き剥がし試験を行ったときに５．３〜９．７Ｎ／２５ｍｍテープ幅であり、かつ
前記粘着剤層の、放射線照射前のプローブタックのピーク強度が２５３〜７２３ｍＮ／ｍｍ ２ である
ことを特徴とする半導体加工用ダイシングテープ。
A dicing tape for semiconductor processing used in a process of dicing a semiconductor package,
A radiation curable pressure-sensitive adhesive layer is formed on at least one surface of the base film,
The pressure-sensitive adhesive layer is composed of a resin composition containing, as a base polymer, an acrylic polymer containing methyl acrylate and 2-ethylhexyl acrylate as monomer components ,
The glass transition temperature of the resin composition is −30 to −11 ° C.,
The pressure-sensitive adhesive layer has a thickness of 10 to 30 μm,
The adhesive strength of the pressure-sensitive adhesive layer after irradiation with respect to SUS304 based on JIS Z0237 is 1.0 to 1.9 N / 25 mm tape width when a 90 ° peel test is performed,
The pressure-sensitive adhesive layer, Ri peak intensity of the probe tack after irradiation is from 54 to 148 mN / mm 2 der in an air atmosphere under conditions,
The adhesive strength of the pressure-sensitive adhesive layer before irradiation with respect to SUS304 based on JIS Z0237 is 5.3 to 9.7 N / 25 mm tape width when a 90 ° peel test is performed, and
The pressure-sensitive adhesive layer, semiconductor processing dicing tape peak intensity of the probe tack before irradiation is characterized <br/> be 253~723mN / mm 2.
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