TWI417658B - Semiconductor element substrate - Google Patents

Semiconductor element substrate Download PDF

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Publication number
TWI417658B
TWI417658B TW99132757A TW99132757A TWI417658B TW I417658 B TWI417658 B TW I417658B TW 99132757 A TW99132757 A TW 99132757A TW 99132757 A TW99132757 A TW 99132757A TW I417658 B TWI417658 B TW I417658B
Authority
TW
Taiwan
Prior art keywords
semiconductor element
acid
group
compound
element substrate
Prior art date
Application number
TW99132757A
Other languages
English (en)
Chinese (zh)
Other versions
TW201129858A (en
Inventor
Yukie Isogai
Original Assignee
Zeon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeon Corp filed Critical Zeon Corp
Publication of TW201129858A publication Critical patent/TW201129858A/zh
Application granted granted Critical
Publication of TWI417658B publication Critical patent/TWI417658B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
    • C08G61/08—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/33—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain
    • C08G2261/332—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain containing only carbon atoms
    • C08G2261/3324—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain containing only carbon atoms derived from norbornene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/40—Polymerisation processes
    • C08G2261/41—Organometallic coupling reactions
    • C08G2261/418—Ring opening metathesis polymerisation [ROMP]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Electroluminescent Light Sources (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW99132757A 2009-09-29 2010-09-28 Semiconductor element substrate TWI417658B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009224880 2009-09-29

Publications (2)

Publication Number Publication Date
TW201129858A TW201129858A (en) 2011-09-01
TWI417658B true TWI417658B (zh) 2013-12-01

Family

ID=43826145

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99132757A TWI417658B (zh) 2009-09-29 2010-09-28 Semiconductor element substrate

Country Status (5)

Country Link
JP (1) JP5522176B2 (ja)
KR (1) KR20120082412A (ja)
CN (1) CN102668046B (ja)
TW (1) TWI417658B (ja)
WO (1) WO2011040324A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5700547B2 (ja) * 2011-05-30 2015-04-15 国立大学法人京都大学 バイオチップ形成用感光性樹脂組成物、及びバイオチップ
JP6155823B2 (ja) * 2012-07-12 2017-07-05 Jsr株式会社 有機ｅｌ素子、感放射線性樹脂組成物および硬化膜
JP6164218B2 (ja) * 2012-08-13 2017-07-19 日本ゼオン株式会社 薄膜トランジスタ
JP6248561B2 (ja) * 2013-11-14 2017-12-20 日本ゼオン株式会社 感放射線性樹脂組成物、及び積層体
KR102377464B1 (ko) 2014-03-20 2022-03-21 제온 코포레이션 감방사선 수지 조성물 및 전자 부품
EP3136173B1 (en) * 2014-04-22 2019-03-13 Zeon Corporation Radiation-sensitive resin composition, resin film, and electronic device
JP6947027B2 (ja) * 2015-02-19 2021-10-13 日本ゼオン株式会社 樹脂組成物、樹脂膜、及び電子部品
WO2017163981A1 (ja) * 2016-03-23 2017-09-28 日本ゼオン株式会社 樹脂組成物、樹脂膜、及び電子部品

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006307155A (ja) * 2005-03-30 2006-11-09 Nippon Zeon Co Ltd 感放射線性樹脂組成物及びその調製方法、積層体及びその製造方法、並びにアクティブマトリックス基板及びそれを備えた平面表示装置
TW200905391A (en) * 2007-03-30 2009-02-01 Zeon Corp Radiation-sensitive resin composition, active matrix substrate and method for producing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010006759A1 (en) * 1998-09-08 2001-07-05 Charles R. Shipley Jr. Radiation sensitive compositions
JP4576797B2 (ja) * 2002-03-28 2010-11-10 東レ株式会社 ポジ型感光性樹脂組成物及びそれよりなる絶縁膜、半導体装置、及び有機電界発光素子
JP2003335826A (ja) * 2002-05-20 2003-11-28 Jsr Corp 共重合体とその製造方法および感放射線性樹脂組成物
JP4222306B2 (ja) * 2002-09-30 2009-02-12 日本ゼオン株式会社 ポジ型感放射線性樹脂組成物、樹脂パターン膜とその形成方法、及び樹脂パターン膜の利用
JP2004190008A (ja) * 2002-11-08 2004-07-08 Toray Ind Inc 樹脂組成物とそれを用いた絶縁膜、半導体装置及び有機電界発光素子
JP4380702B2 (ja) * 2004-03-31 2009-12-09 日本ゼオン株式会社 感放射線組成物、積層体及びその製造方法並びに電子部品

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006307155A (ja) * 2005-03-30 2006-11-09 Nippon Zeon Co Ltd 感放射線性樹脂組成物及びその調製方法、積層体及びその製造方法、並びにアクティブマトリックス基板及びそれを備えた平面表示装置
TW200905391A (en) * 2007-03-30 2009-02-01 Zeon Corp Radiation-sensitive resin composition, active matrix substrate and method for producing the same

Also Published As

Publication number Publication date
KR20120082412A (ko) 2012-07-23
CN102668046A (zh) 2012-09-12
WO2011040324A1 (ja) 2011-04-07
TW201129858A (en) 2011-09-01
JP5522176B2 (ja) 2014-06-18
JPWO2011040324A1 (ja) 2013-02-28
CN102668046B (zh) 2014-12-10

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MM4A Annulment or lapse of patent due to non-payment of fees