TW200302399A - Irradiation-sensitive resin composition and pattern forming process - Google Patents

Irradiation-sensitive resin composition and pattern forming process Download PDF

Info

Publication number
TW200302399A
TW200302399A TW91137587A TW91137587A TW200302399A TW 200302399 A TW200302399 A TW 200302399A TW 91137587 A TW91137587 A TW 91137587A TW 91137587 A TW91137587 A TW 91137587A TW 200302399 A TW200302399 A TW 200302399A
Authority
TW
Taiwan
Prior art keywords
radiation
alicyclic olefin
resin composition
acidic group
resin
Prior art date
Application number
TW91137587A
Other languages
Chinese (zh)
Other versions
TWI307823B (en
Inventor
Junji Kodemura
Hirokazu Higashi
Original Assignee
Zeon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeon Corp filed Critical Zeon Corp
Publication of TW200302399A publication Critical patent/TW200302399A/en
Application granted granted Critical
Publication of TWI307823B publication Critical patent/TWI307823B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

Abstract

The present invention provides a irradiation-sensitive resin composition comprising the alicyclic series olefin resin with acidic group, acidic generating agent, cross-linking agent, and solvent, characterized in that when the weight-average molecular weight of the alicyclic olefin resin with acidic group is less than 10000, the index number C1 indicated from formula (1) is more than 300; when the weight-average molecular weight of the alicyclic olefin resin with acidic group is more than 10000, the index number C2 indicated from formula (2) is more than 120.

Description

200302399 -一…...............…,.......-.............................-…·, :'- '-V. -V -l·'·'·. …:: .................................................. 玖、發明說明 …-........................二................二......... - ^ .· . .·. ........................................-......................... ......... · (發明說明應敘明:發明所屬之技術領域、先前技術、內容、實施方式及圖式簡單說明) (一) 發明所屬之技術領域 本發明係有關一種感放射線性樹脂組成物,更詳言之, 係有關藉由粒子線或電子線等活性放射線照射,變化對鹼 性溶液之顯像液而言溶解性的感放射線性樹脂組成物。本 發明之感放射線性樹脂組成物可形成樹脂膜,於其上藉由 微影術形成圖樣。本發明之感放射線性樹脂組成物適合作 爲形成保護膜、平坦化膜、電絕緣膜等之電子零件用樹脂 膜之樹脂材料。 (二) 先前技術 液晶顯示元件、積體電路元件、固體攝影元件等之電子 零件、或液晶顯示器用濾色器等之上設置有爲防止其惡化 或損傷之保護膜、爲使元件表面或配線平坦化之平坦化膜 、爲保持電絕緣性之電絕緣膜等。而且,爲使層狀設置的 配線間絕緣時’在薄膜電晶體型液晶顯示元件或積體電路 元件上設置層間絕緣膜。 此等之保護膜、平坦化膜、層間絕緣膜等使用具有各種 機能性之電子零件用樹脂膜。以往,爲形成電子零件用樹 脂膜時之樹脂材料一般使用環氧樹脂等之熱硬性樹脂材料 Ο 然而’使用以往作爲電子零件形成用材料之已知的熱硬 性樹脂材料時’無法得到具有充分平坦性之樹脂膜。因此 一 6 - 200302399 ,企求開發可微細圖樣化的新感放射線性絕緣膜形成用樹 脂材料。此外,近年來伴隨配線或裝置之高密度化,企求 此等樹脂材料爲低介電性。 對應於該要求,提案例如使含有如甲氧基羰基之酯基的 原冰片烯系單體開環聚合,且使所得開環聚合物加氫後’ 使加氫物加水分解、酯基部分變換成羧基,使用所得鹼可 溶性環狀聚烯烴樹脂之感放射線性樹脂組成物(特開平1 〇 -307 3 88號公報、及特開平1 1 - 52574號公報)。該放射線性 樹脂組成物係爲含有上述鹼可溶性環狀聚烯烴樹脂與酸發 生劑(例如醌二疊氮化合物)與交聯劑之樹脂組成物。更具 體而言,此等公報中,鹼可溶性環狀聚烯烴樹脂係使用由 8_甲基—8 -甲氧基羰基四環[[ΙΟ·〗2·5.〗7’10]-]-十二烯之 開環(共)聚物的加氫物加水分解所成的樹脂。 然而,本發明人等檢討的結果,可知使用上述公報記載 的感放射線性組成物所得的樹脂膜,雖爲介電性、吸水性 、平坦性、透明性、耐溶劑性、耐熱尺寸安定性等較佳者 ,惟解析度及殘膜率不佳、且不易製得良好的圖樣形狀。 (三)發明內容 本發明之目的係提供一種含有具酸性基之脂環族烯烴樹 脂、酸發生劑、交聯劑、及溶劑的感放射線性樹脂組成物 ,不僅低介質率、耐熱性、平坦性、透明性、及耐溶劑性 優異,且解析度及殘膜率優異’可具有良好微細圖樣形狀 之感放射線性樹脂組成物。 而且,本發明之目的係提供一種使用具有各種優異特性 - 7 - 200302399 之感放射線性樹脂組成物,及形成圖樣的方法。 此外’本發明之目的係提供一種形成該圖樣之樹脂膜、 及利用作爲該樹脂膜之電子零件用樹脂膜。 本發明人等爲達成上述目的時再三深入硏究的結果,發 現有關具有酸性基之脂環族烯烴樹脂,藉由使重量平均分 子量、分子量分布、構造單位之碳數、及酸性基之比例控 制於特定範圍內,使對鹼顯像液之溶解性變小,可得未照 射部之強溶解抑制效果,結果可得解析度、殘膜率、及圖 樣形狀優異的感放射線性樹脂組成物。本發明基於該見解 ’遂而完成。 因此,本發明係提供一種感放射線性樹脂組成物,其係 於含有(A )具酸性基之脂環族烯烴樹脂、(B )酸發生劑、(C ) 交聯劑、及(D)溶劑的感放射線性樹脂組成物中,其特徵爲 (A )具酸性基之脂環族烯烴系樹脂之重量平均分子量小於 10000時具有以下述式(1)所示指數C1爲3 00以上,而重 量平均分子量爲1 0000以上時具有下述式(2)所示指數C2 爲1 2 0以上者 (mw)°*5x(ac)7 5 (Λ , C1=---— Χίο5 ⑴ (AG)6X(MWD)2 (其中,MW係爲重量平均分子量,AC係爲構造單位之平 均碳數,AG係爲全部構造單位中酸性基之莫耳數’ MWD係 爲分子量分布), -8 - (2)200302399 (mw)05x(ac)丄 (ag)2x(mwd)3 (其中’各符號之意義與式(1)相同)。 另外’本發明係提供一種使用感放射線性樹脂組成物, 在基板上形成樹脂膜,自該樹脂膜上圖樣狀照射活性放射 線’在樹脂膜上形成潛像圖樣,再藉由使樹脂膜與顯像液 接觸以使圖樣顯像化之圖樣形成方法。 此外’本發明係提供一種藉由上述方法以形成圖樣之樹 脂膜,及利用作爲該樹脂膜之電子零件用樹脂膜。 爲實施發明之最佳形態 本發明之感放射線性樹脂組成物,其係於含有(A )具酸性 基之脂環族烯烴樹脂、(B )酸發生劑、(C )交聯劑、及(D )溶 劑的感放射線性樹脂組成物中,其特徵爲(A )具酸性基之脂 環族烯烴系樹脂之重量平均分子量小於1 〇 〇 〇 〇時具有以下 述式(1)所示指數C1爲300以上,而重量平均分子量爲 1 0000以上時具有下述式(2)所示指數C2爲120以上者 (MW)a5X(AC)7 (1) C 1 = - ΧΙΟ5 (AG)6X(MWD)2 (其中,MW係爲重量平均分子量,AC係爲構造單位之平 均碳數,AG係爲全部構造單位中酸性基之莫耳數,MWD係 爲分子量分布), 一 9一 (2) (2)200302399 (MW)a5X(AC)2 C2= - ΧΙΟ3 (AG)2X(MWD)3 (其中,各符號之意義與式(1)相同)。 指數C1爲3 00以上、較佳者物400以上、更佳者爲500 以上、最佳者爲600以上。指數C2爲120以上、較佳者爲 150以上、更佳者爲200以上、最佳者爲2 50以上。 重量平均分子量、相當於構造單位之平均碳數(以下簡單 爲「平均碳數」)、全部構造單位中酸性基之莫耳%(以下稱 爲酸性基比例)、及分子量分布係爲影響具有酸性基之脂環 族烯烴樹脂對鹼顯像液之溶解性的要素。 於本發明中,具有酸性基之脂環族烯烴樹脂對鹼顯像液 之溶解性係藉由重量平均分子量小於10000時以式(1)所示 之指數C1、重量平均分子量爲10000以上時以式(2)所示 指數C2判斷。 本發明之重量平均分子量係爲藉由以四氫呋喃爲溶劑之 凝膠•滲透•色層分析法(GPC)測定的聚苯乙烯換算値,十 位數四捨五入之値爲有效數値。具有酸性基之脂環族烯烴 樹脂不溶解於四氫呋喃時,可使用氯仿或環己烷。 指數c 1及指數C2之上限皆沒有特別的限制,通常爲 1 0000以下、較佳者爲5000以下、更佳者爲3 000以下、 最佳者爲1 500以下。指數C1之上限大多約爲1 000。指數 C2之上限大多約爲500。 指數C1及指數C2(以下稱爲「指數Ci」)各滿足上述條 200302399 件之具酸性基的脂環族烯烴樹脂,對鹼顯像液之溶解性小( 即較爲鹼難溶性)。因此,使用含有該具有酸性基之脂環族 烯烴樹脂的感放射線性樹脂組成物所得的樹脂膜,活性放 射線之照射部與未照射部對鹼顯像液之溶解性差異很大, 可得良好的解析度及殘膜率。 爲得上述範圍之指數c i的具有酸性基之脂環族烯烴樹脂 時,算出指數Ci之式(1)及式(2)要素的重量平均分子量、 相當構造單位之平均碳數、全部構造單位中酸性基之莫耳% 、及分子量分布,可藉由具有酸性基之脂環族烯烴樹脂的 製造條件予以控制。 於本發明中具有酸性基之脂環族烯烴樹脂的分子量分布 係以重量平均分子量/數平均分子量(Mw/Μη)所示之分散度 。數平均分子量係與重量平均分子量相同,爲藉由GPC測 定的聚苯乙烯換算値。就低介電率、低吸水性、耐溶劑性 、解析度、殘膜率、圖樣形狀等各特性優異而言,重量平 均分子量通常爲 500〜20000、較佳者爲 1 000〜1 5 0 0 0、更 佳者爲1 000〜1 0000。因此,以使用上述式(1 )適合的具有 重量平均分子量之具酸性基的脂環族烯烴樹脂最佳。 控制重量平均分子量之方法沒有特別的限制,例如可採 用使用下述分子量調整劑之方法等。而且,使具有不同重 量平均分子量之數種樹脂混合,亦以藉由混合樹脂之重量 平均分子量爲目的重量平均分子量。 控制分子量分布之方法沒有特別的限制,例如爲得到爲 3 . 3以下、較佳者爲3 . 0以下、更佳者爲2 . 5以下、最佳 -11- 200302399 者爲2.0以下之分子量分布狹窄的樹脂,採用使用習知觸 媒以調整溫度或時間等之反應條件,或使用下述具有中性 電子供應性配位子之有機釕化合物爲主成份的觸媒予以開 ί哀聚合的方法。 、 平均碳數係以構成樹脂之各構造單位中所含的構成酸性 > 基之碳外的碳原子數與各構造單位之比例的積合劑所算出 。此處’各構成單位之比例係爲對合計1莫耳構成樹脂之 構造單位而言的値(莫耳)。因此,例如除構成極性基之碳 0 外碳數爲12之構造單位(I)與碳數爲6之構造單位(II)爲 1 : 1莫耳比存在時相當構造單位之平均碳數計算爲1 2χ 0·5+6χ 0.5=9 〇 酸性基之比例爲對全部構造單位而言具有酸性基之構造 單位的比例(莫耳%)。 控制平均碳數或酸性基比例的方法沒有特別的限制,例 如藉由調整製造樹脂時使用的單體種類或使用量等予以進 行。 參 本發明所使用的(A)具有酸性基之脂環族烯烴樹脂係爲具 有含脂環族構造之烯烴單體(以下稱爲「脂環族烯烴單體」) 由來之構造單位的聚合物。該聚合物亦可以含有脂環族烯 烴單體由來之構造單位外之構造單位。酸性基只要是在水 中發生質子所得的基,其具體例如苯酚性羥基、羧基(即羥 基羰基)、二羧酸酐殘基、磺酸殘基、磷酸殘基等。於此等 之中,以羧基及二羧酸酐殘基較佳。該酸性基可以存在於 脂環族烯烴單體由來之構造單位中,亦可以存在於脂環族 -12- 200302399 烯烴單體由來之構造單位外的構造單位中。酸性基之比例 爲可得低介電率樹脂、與容易控制樹脂對鹼顯像液而言之 溶解性時,通常爲20〜80莫耳%、較佳者爲30〜75莫耳% 、更佳者爲30〜70莫耳%。具有酸性基之脂環族烯烴樹脂 以可以具有酸性基外之羥基或酯基等極性基。 脂環族烯烴單體中所含的脂環族構造可以爲單環、亦可 以爲多環(縮合多環、交聯環、此等組合的多環等)。就機 械強度與耐熱性而言以多環較佳。構成脂環族構造之碳原 子數沒有特別的限制,通常爲4〜30個、較佳者爲5〜20 個、更佳者爲5〜1 5個,藉此可使耐熱性、圖樣形成性等 各特性高度平衡。 脂環族烯烴樹脂中脂環族烯烴單體由來的構造單位之比 例可是使用目的而定適當選擇,通常爲30〜100重量%、較 佳者爲50〜100重量%、更佳者爲70〜100%之範圍內。脂 環族烯烴單體由來之構造比例過少時,耐熱性不佳,故不 爲企求。 脂環族烯烴樹脂例如至少一種選自於(i )脂環族烯烴單體 之開環(共)聚合物及其加氫物、(i i )脂環族烯烴單體之加 成(共)聚合物、(i i i )脂環族烯烴單體與乙烯化合物之加成 共聚物、(iv)單環環烯(共)聚合物、(v)脂環族共軛二烯( 共)聚合物、(v i )乙烯系脂環族烴(共)聚合物及其加氫物、 以及(v i i )芳香族烯烴(共)聚合物之芳香環加氫物。 脂環族烯烴樹脂以脂環族烯烴單體之開環(共)聚合物的 加氫物較佳。脂環族烯烴樹脂以原冰片烯系單體之開環(共) -13 — 200302399 聚合物的加氫物更佳。原冰片烯系單體以下述四環十二烯 類較佳。 具有酸性基之脂環族烯烴樹脂可藉由使脂環族烯烴樹脂 以含酸性基之化合物改性予以合成。而且,具有酸性基之 脂環族烯烴樹脂可以作爲具有酸性基之脂環族烯烴單體與 不具酸性基之脂環族烯烴單體的加成共聚物、開環共聚物 、或此等之加氫物合成。另外,具有酸性基之脂環族烯烴 樹脂可使含有如甲氧基羰基之酯基的脂環族烯烴單體、與 視其所需不具酯基之單體(例如環狀烯烴單體、乙烯基單體 等)之加成(共)聚合物、開環(共)聚合物、或此等之加氫物 藉由加水分解、合成。於下述中,有關此等之點更詳細第 說明。而且,於下述說明中爲避免繁雜時,聚合與共聚合 同時以「聚合」表示,聚合物與共聚物同時以「聚合物」 表示。 爲製得具有酸性基之脂環族烯烴樹脂的方法,例如使不 具酸性基之脂環族烯烴單體與視其所需與該物共聚合的單 體加成聚合或開環聚合,且視其所需藉由使不飽和鍵部分 加氫,使不具酸性基之脂環族烯烴樹脂合成,使該脂環族 烯烴樹脂在游離基起始劑存在下以丙烯酸、甲基丙烯酸、α -乙基丙烯酸、2 -羥基乙基(甲基)丙烯酸、馬來酸、富馬酸 、衣康酸、內順式-二環[2 · 2 · 1 ]庚-5 -烯-2,3 -二羧酸、甲 基-內順式-二環[2.2.1]庚-5-烯-2, 3 -二羧酸等之不飽和羧 酸化合物、此等之酯或醯胺;馬來酸酐、氯化馬來酸酐、 丁烯基琥珀酸酐、四氫酞酸酐、檸康酸酐等不飽和羧酸酐 -14- 200302399 等含酸性基之化合物改性的方法(i)予以合成。而且,具有 酸性基之脂環族烯烴樹脂可藉由不具酸性基之脂環族烯烴 單體與具有酸性基之脂環族烯烴單體共聚合的方法(I I )製 得。此時,聚合的形式爲加成聚合及開環聚合,聚合後視 其所需亦可予以加成。 上述(I )之方法中,不具酸性基之脂環族烯烴樹脂可使用 苯乙烯、α -甲基苯乙烯、二乙烯基苯、乙烯基萘、乙烯基 甲苯等之芳香族烯烴加成聚合所得聚合物之芳香環加氫, 形成與脂環族烯烴單體由來的構造單位相同構造單位之樹 脂。脂環族烯烴樹脂亦可以爲脂環族烯烴單體、與可與此 等共聚合的單體共聚合所得者。上述(I)的方法中可共聚合 的單體可使用具有酸性基者時,可直接製得具有酸性基之 脂環族烯烴樹脂。 上述(I I )的方法中特別是在以具有中性電子供應性配位 子之有機釕化合物爲主成份之觸媒存在下,使不具極性基 之脂環族烯烴單體與具有極性基之脂環族烯烴單體開環復 分解共聚合,視其所需另藉由加水分解等以使取代基改性 時,可製得分子量分布狹窄的脂環族烯烴樹脂。於該方法 中使用的觸媒爲中性電子供應性配位子配位的有機釕化合 物爲主成份的觸媒。構成該有機釕化合物之中性電子供應 性配位子係位自中心金屬之釕引離時使具有負電荷之陰離 子性配位子配位的化合物。此時,亦可以存在有對陰離子 ,另亦可具有釕陽離子與形成離子對之陰離子作爲對離子 -15- 200302399 爲製得脂環族烯烴樹脂時所使用的單體之具體例如下所 述。 不具酸性基之脂環族烯烴單體例如二環[2 · 2 . 1 ]庚-2 -火希( 慣用名:原冰片烯)、5 -甲基-二環[2 · 2 · 1 ]庚-2 -烯、5,5 _ 二甲基-二環[2.2.1]庚-2-烯、5 -乙基-二環[2.2.1]庚-2_ 烯、5 -丁基-二環[2.2.1]庚-2-烯、5 -己基-二環 -2 -烯、5_辛基-二環[2.2.1]庚-2-烯、5-十八烷基-二環 [2·2·1]庚-2-烯、5 -亞乙基-二環[2.2.1]庚-2-烯、5 -亞甲 基-二環[2.2.1]庚-2-燃、5 -乙烯基-二環[2.2.1]庚-2·稀 、5-丙烯基-二環[2.2.1]庚-2-烯、5 -甲氧基-烴甲基-二環 [2·2·1]庚-2-烯、5 -氰基-二環[2·2·1]庚-2-烯、5 -乙氧基 羰基-二環[2.2.1]庚-2-烯、二環[2.2.1]庚-5-烯基_2_甲 基丙酸酯、二環[2 · 2 · 1 ]庚-5 -烯基-2 -甲基辛酸酯、5 _經基 甲基二環[2.2.1]庚-2-烯、5, 6-二(羥基甲基)-二環[2.21] 庚-2-烯、5 -羥基-I-丙基二環[2.2.1]庚-2-烯、5,6 -二殘 基-二環[2.2.1]庚-2-烯、二環[2.2.1]庚-2-烯基-5, 6 -二 竣酸醯亞胺、5 -環戊基-二環[2.2.1]庚-2-烯、5 -環己基-二環[2.2.1]庚-2-烯、5-環己烯基-二環[2·2·1]庚-2-烯、 5'苯基-二環[2.2.1]庚-2-烯、三環[4.3.0.12’5]癸-3,7-二 烯(慣用名:二環戊二烯)、三環[4 · 3 · 0 · 12,5 ]癸-3 -烯、三 環[4.3.0.I2,5]十一 -3, 7-二烯、三環[4·3·0. I2,5]十一_ 3, 8 -二烯、三環[4.3.0.I2,5]十一 -3-烯、四環 [7·4.0.11(),13.02·7]十三 _2,4,6-11-四烯(別名:1,4-甲醇-四氫芴)、四環[Sj.O.l11’14』2·8]十四- 200302399200302399-One ....................., .......-... ........-... ·, : '-' -V. -V -l · '·' ·.… :: ........ ............ 发明 、 Explanation of the invention ...-............ ............ Two ...... Two .........- ^ ........ .....................................-............ ................... (The description of the invention should state: the technical field to which the invention belongs, the prior art, the content, the embodiment and the simple description of the drawings) ( A) The technical field to which the invention belongs The present invention relates to a radiation-sensitive resin composition, and more specifically, it relates to a solution which is dissolved in a developing solution of an alkaline solution by irradiation with active radiation such as particle rays or electron rays. Sexual radiation-sensitive resin composition. The radiation-sensitive resin composition of the present invention can form a resin film on which a pattern is formed by lithography. The radiation-sensitive resin composition of the present invention is suitable as a resin material for forming a resin film for electronic parts such as a protective film, a flattening film, and an electrical insulating film. (2) In the prior art, electronic parts such as liquid crystal display elements, integrated circuit elements, solid-state imaging elements, or color filters for liquid crystal displays are provided with a protective film to prevent deterioration or damage, and to make the surface or wiring of the element A flattened film, an electrically insulating film, and the like that maintain electrical insulation. Further, in order to insulate interlayer wiring provided in a layer form, an interlayer insulating film is provided on a thin film transistor type liquid crystal display element or an integrated circuit element. These protective films, planarizing films, interlayer insulating films, and the like use resin films for electronic parts having various functions. Conventionally, a thermosetting resin material such as an epoxy resin is generally used as a resin material when forming a resin film for electronic parts. However, when using a known thermosetting resin material conventionally used as a material for forming electronic parts, a sufficient flatness cannot be obtained. Resin film. Therefore, a 6-200302399 was developed in order to develop a resin material for the formation of a new-type radiation-resistant insulating film that can be finely patterned. In addition, in recent years, with the increase in the density of wiring and devices, these resin materials are required to have low dielectric properties. In response to this request, for example, a proposal was made to ring-open polymerize an orbornene-based monomer containing an ester group such as a methoxycarbonyl group, and hydrogenate the resulting ring-opened polymer to hydrolyze the hydrogenated product and convert the ester group partially A carboxyl group is formed, and a radiation-sensitive resin composition of the obtained alkali-soluble cyclic polyolefin resin is used (Japanese Patent Application Laid-Open No. 10-307 3 88 and Japanese Patent Application Laid-Open No. 1 1-52574). The radiation resin composition is a resin composition containing the above-mentioned alkali-soluble cyclic polyolefin resin, an acid generator (for example, a quinonediazide compound), and a crosslinking agent. More specifically, in these publications, the alkali-soluble cyclic polyolefin resin is based on a 8-methyl-8-methoxycarbonyl tetracyclic ring [[ΙΟ · 〖2 · 5.〗 7'10]-]- Resin formed by hydrolyzing the hydrogenation of dodecene ring-opening (co) polymer. However, as a result of the review by the present inventors, it can be seen that the resin film obtained by using the radiation-sensitive composition described in the above publication has dielectric properties, water absorption, flatness, transparency, solvent resistance, and heat-resistant dimensional stability. The better, but the resolution and the residual film rate are not good, and it is not easy to make a good pattern shape. (3) Summary of the invention The object of the present invention is to provide a radiation-sensitive resin composition containing an alicyclic olefin resin having an acidic group, an acid generator, a cross-linking agent, and a solvent, which has a low dielectric constant, heat resistance, and flatness. A radiation-sensitive resin composition having excellent fine pattern shape, which is excellent in transparency, transparency, and solvent resistance, and excellent in resolution and residual film rate. Furthermore, an object of the present invention is to provide a method for forming a pattern using a radiation-sensitive resin composition having various excellent characteristics-7-200302399. In addition, an object of the present invention is to provide a resin film for forming the pattern and a resin film for electronic parts using the resin film. As a result of intensive research to achieve the above-mentioned object, the inventors have found that the cycloaliphatic olefin resin having an acidic group is controlled by controlling the weight average molecular weight, molecular weight distribution, carbon number of the structural unit, and the proportion of the acidic group. Within a specific range, the solubility in the alkali imaging solution is reduced, and a strong dissolution-inhibiting effect in the unirradiated portion can be obtained. As a result, a radiation-sensitive resin composition having excellent resolution, residual film rate, and pattern shape can be obtained. The present invention has been completed based on this knowledge. Therefore, the present invention provides a radiation-sensitive resin composition containing (A) an alicyclic olefin resin having an acidic group, (B) an acid generator, (C) a crosslinking agent, and (D) a solvent In the radiation-sensitive resin composition, (A) the alicyclic olefin resin having an acidic group has a weight average molecular weight of less than 10,000 and has an index C1 represented by the following formula (1) of 300 or more and a weight of When the average molecular weight is 10,000 or more, it has the index C2 represented by the following formula (2): 1 2 0 or more (mw) ° * 5x (ac) 7 5 (Λ, C1 = ---— Χίο5 ⑴ (AG) 6X (MWD) 2 (where MW is the weight average molecular weight, AC is the average carbon number of the structural unit, AG is the mole number of acid groups in all structural units, and MWD is the molecular weight distribution), -8-(2 ) 200302399 (mw) 05x (ac) ag (ag) 2x (mwd) 3 (wherein the meaning of each symbol is the same as the formula (1). In addition, the present invention provides a substrate using a radiation-sensitive resin composition A resin film is formed on the resin film, and active radiation is irradiated in a pattern on the resin film to form a latent image pattern on the resin film. A pattern forming method in which a developing solution is brought into contact to develop a pattern. In addition, the present invention provides a resin film for forming a pattern by the above method, and a resin film for electronic parts using the resin film. BEST MODE The radiation-sensitive resin composition of the present invention is based on a resin containing (A) an alicyclic olefin resin having an acidic group, (B) an acid generator, (C) a crosslinking agent, and (D) a solvent. The radiation-sensitive resin composition is characterized in that (A) the alicyclic olefin resin having an acidic group has a weight average molecular weight of less than 1,000, and has an index C1 of 300 or more as shown in the following formula (1), When the weight average molecular weight is 10,000 or more, the index C2 is 120 or more (MW) a5X (AC) 7 (1) C 1 =-χΙΟ5 (AG) 6X (MWD) 2 (where , MW is the weight average molecular weight, AC is the average carbon number of the structural unit, AG is the mole number of the acidic group in all structural units, and MWD is the molecular weight distribution), 1-9 (2) (2) 200302399 ( MW) a5X (AC) 2 C2 =-ΧΙΟ3 (AG) 2X (MWD) 3 (where the meaning of each symbol and (1) The same). Index C1 is more than 300, the better is 400 or more, the better is 500 or more, the best is 600 or more. The index C2 is 120 or more, the better is 150 or more, the better It is 200 or more, and the most preferable is 2 50 or more. The weight average molecular weight, the average carbon number equivalent to the structural unit (hereinafter simply referred to as "average carbon number"), the mole percentage of acidic groups in all structural units (hereinafter referred to as acidity) Group ratio) and molecular weight distribution are factors that affect the solubility of an alicyclic olefin resin having an acidic group in an alkali developing solution. In the present invention, the solubility of an alicyclic olefin resin having an acidic group in an alkali developer is determined by an index C1 represented by formula (1) when the weight average molecular weight is less than 10,000 and the weight average molecular weight is 10,000 or more. The index C2 shown in equation (2) is judged. The weight-average molecular weight of the present invention is a polystyrene conversion 测定 measured by a gel-permeation-chromatography (GPC) method using tetrahydrofuran as a solvent, and 値 rounded to ten digits is an effective number 有效. When the alicyclic olefin resin having an acidic group is insoluble in tetrahydrofuran, chloroform or cyclohexane can be used. The upper limits of the index c 1 and the index C2 are not particularly limited, and are usually 10,000 or less, preferably 5,000 or less, more preferably 3,000 or less, and most preferably 1,500 or less. The upper limit of index C1 is mostly around 1,000. The upper limit of the index C2 is mostly around 500. The index C1 and the index C2 (hereinafter referred to as "index Ci") each satisfy the above-mentioned 200302399 pieces of alicyclic olefin resins having an acidic group, which have a low solubility in an alkali developing solution (that is, relatively poorly soluble in an alkali). Therefore, with the resin film obtained by using the radiation-sensitive resin composition containing the alicyclic olefin resin having an acidic group, the irradiated portion and the unirradiated portion of the active radiation have a large difference in solubility in the alkali imaging solution, and good results can be obtained. Resolution and residual film rate. In order to obtain an alicyclic olefin resin having an acidic group with an index ci in the above range, calculate the weight average molecular weight of the elements of formula (1) and formula (2) of the index Ci, the average carbon number of equivalent structural units, and the total structural units The mole% of the acidic group and the molecular weight distribution can be controlled by the production conditions of the alicyclic olefin resin having an acidic group. The molecular weight distribution of the alicyclic olefin resin having an acidic group in the present invention is a degree of dispersion represented by a weight average molecular weight / number average molecular weight (Mw / Mη). The number average molecular weight is the same as the weight average molecular weight, and is a polystyrene-equivalent 値 measured by GPC. In terms of excellent properties such as low dielectric constant, low water absorption, solvent resistance, resolution, residual film rate, and pattern shape, the weight average molecular weight is usually 500 to 20,000, preferably 1 000 to 1 50 0 0, more preferably 1 000 ~ 1 0000. Therefore, it is most preferable to use an alicyclic olefin resin having an acidic group having a weight-average molecular weight, which is suitable for using the formula (1). The method for controlling the weight-average molecular weight is not particularly limited, and for example, a method using a molecular weight adjuster described below can be used. Furthermore, when several resins having different weight-average molecular weights are mixed, the weight-average molecular weight is also determined by mixing the weight-average molecular weights of the resins. The method for controlling the molecular weight distribution is not particularly limited. For example, in order to obtain a molecular weight distribution of 3.3 or less, preferably 3.0 or less, more preferably 2.5 or less, and the best -11-200302399, the molecular weight distribution is 2.0 or less. Narrow resins are prepared by using conventional catalysts to adjust reaction conditions such as temperature or time, or by using the following catalysts with organic electron ruthenium compounds as the main component, which are neutral electron-donating ligands. . The average carbon number is calculated from the total amount of carbon atoms outside the carbon constituting the acidic > group of the constituent units constituting the resin and the ratio of each constituent unit. Here, the ratio of each constituent unit is 値 (mole) with respect to the structural unit of a total of 1 mole of the constituent resin. Therefore, for example, the structural unit (I) having a carbon number of 12 and the structural unit (II) having a carbon number of 6 except for the carbon constituting the polar group is 1: 1. The average carbon number of equivalent structural units in the presence of a molar ratio of 1: 1 is calculated as 1 2χ 0.5 + 6χ 0.5 = 9 〇 The ratio of the acidic group is the ratio (mole%) of the structural unit having an acidic group for all the structural units. The method of controlling the average carbon number or the proportion of acidic groups is not particularly limited. For example, it can be performed by adjusting the type or amount of monomers used in the production of the resin. (A) An alicyclic olefin resin having an acidic group used in the present invention is a polymer having a structural unit derived from an olefin monomer having an alicyclic structure (hereinafter referred to as "alicyclic olefin monomer"). . The polymer may also contain structural units other than the structural units derived from the alicyclic olefin monomer. As long as the acidic group is a group obtained by proton generation in water, specific examples thereof include a phenolic hydroxyl group, a carboxyl group (that is, a hydroxycarbonyl group), a dicarboxylic anhydride residue, a sulfonic acid residue, and a phosphoric acid residue. Among these, a carboxyl group and a dicarboxylic anhydride residue are preferable. The acidic group may exist in a structural unit derived from an alicyclic olefin monomer, or in a structural unit other than a structural unit derived from an alicyclic -12-200302399 olefin monomer. When the ratio of the acidic group is that a low-dielectric resin can be obtained and the solubility of the resin in an alkali developing solution can be easily controlled, it is usually 20 to 80 mol%, preferably 30 to 75 mol%, more The best is 30 to 70 mole%. The alicyclic olefin resin having an acidic group may have a polar group such as a hydroxyl group or an ester group other than the acidic group. The alicyclic structure contained in the alicyclic olefin monomer may be a monocyclic ring or a polycyclic ring (condensed polycyclic ring, crosslinked ring, polycyclic ring of these combinations, etc.). Polycyclic is preferred in terms of mechanical strength and heat resistance. The number of carbon atoms constituting the alicyclic structure is not particularly limited, but it is usually 4 to 30, preferably 5 to 20, and more preferably 5 to 15 so that heat resistance and pattern formation can be achieved. The characteristics are highly balanced. The proportion of the structural unit derived from the alicyclic olefin monomer in the alicyclic olefin resin is appropriately selected depending on the purpose of use, and is usually 30 to 100% by weight, preferably 50 to 100% by weight, and more preferably 70 to Within 100%. When the structure ratio of the alicyclic olefin monomer is too small, heat resistance is not good, so it is not desirable. The alicyclic olefin resin is, for example, at least one kind selected from (i) a ring-opening (co) polymer of an alicyclic olefin monomer and a hydrogenated product thereof, (ii) addition (co) polymerization of an alicyclic olefin monomer Compounds, (iii) addition copolymers of alicyclic olefin monomers and ethylene compounds, (iv) monocyclic cycloolefin (co) polymers, (v) alicyclic conjugated diene (co) polymers, ( vi) Ethylene-based alicyclic hydrocarbon (co) polymers and hydrogenated products thereof, and (vii) aromatic ring hydrogenated products of aromatic olefin (co) polymers. The alicyclic olefin resin is preferably a hydrogenated product of a ring-opening (co) polymer of an alicyclic olefin monomer. The cycloaliphatic olefin resin is ring-opened (co-) with original norbornene monomer -13 — 200302399 Hydrogenated polymer is better. The orthobornene-based monomers are preferably the following tetracyclododecenes. An alicyclic olefin resin having an acidic group can be synthesized by modifying an alicyclic olefin resin with an acidic group-containing compound. Moreover, the alicyclic olefin resin having an acidic group can be used as an addition copolymer, an ring-opening copolymer, or the like of an alicyclic olefin monomer having an acidic group and an alicyclic olefin monomer having no acidic group. Hydrogen synthesis. In addition, the alicyclic olefin resin having an acidic group can make an alicyclic olefin monomer containing an ester group such as a methoxycarbonyl group, and a monomer having no ester group as needed (for example, a cyclic olefin monomer, ethylene Base monomers, etc.) addition (co) polymers, ring-opening (co) polymers, or these hydrogenates are decomposed and synthesized by hydrolysis. In the following, these points are explained in more detail. In the following description, in order to avoid complication, polymerization and copolymerization are expressed as "polymerization", and polymers and copolymers are expressed as "polymer" at the same time. In order to obtain an alicyclic olefin resin having an acidic group, for example, an alicyclic olefin monomer having no acidic group is subjected to addition polymerization or ring-opening polymerization with a monomer copolymerized with the material as needed, and It is required to synthesize an alicyclic olefin resin having no acidic group by hydrogenating an unsaturated bond portion, and to make the alicyclic olefin resin with acrylic acid, methacrylic acid, and α-ethyl in the presence of a radical initiator. Acrylic acid, 2-hydroxyethyl (meth) acrylic acid, maleic acid, fumaric acid, itaconic acid, internal cis-bicyclo [2 · 2 · 1] hept-5 -ene-2,3 -di Unsaturated carboxylic compounds such as carboxylic acids, methyl-endos-bicyclo [2.2.1] hept-5-ene-2, 3-dicarboxylic acids, and the like, or esters thereof; maleic anhydride, Unsaturated carboxylic acid anhydrides such as chlorinated maleic anhydride, butenyl succinic anhydride, tetrahydrophthalic anhydride, citraconic anhydride, etc.-14-200302399 are modified by a method (i) to synthesize them. Further, the alicyclic olefin resin having an acidic group can be obtained by a method (I I) of copolymerizing an alicyclic olefin monomer having no acidic group and an alicyclic olefin monomer having an acidic group. At this time, the form of polymerization is addition polymerization and ring-opening polymerization, and after the polymerization, addition may be performed as needed. In the method (I), the alicyclic olefin resin having no acidic group can be obtained by addition polymerization of aromatic olefins such as styrene, α-methylstyrene, divinylbenzene, vinylnaphthalene, and vinyltoluene. The aromatic ring of the polymer is hydrogenated to form a resin having the same structural unit as the structural unit derived from the alicyclic olefin monomer. The alicyclic olefin resin may be obtained by copolymerizing an alicyclic olefin monomer and a monomer copolymerizable therewith. When a monomer having an acidic group can be used as the copolymerizable monomer in the method (I), an alicyclic olefin resin having an acidic group can be directly obtained. In the above method (II), in particular, in the presence of a catalyst containing an organic ruthenium compound having a neutral electron-donating ligand as a main component, an alicyclic olefin monomer having no polar group and a lipid having a polar group are used. When the ring-opening olefin monomer is subjected to ring-opening metathesis copolymerization, and if necessary, the substituent is modified by hydrolysis or the like, an alicyclic olefin resin having a narrow molecular weight distribution can be obtained. The catalyst used in this method is a catalyst whose main component is an organic ruthenium compound coordinated with a neutral electron-supplying ligand. The neutral electron-supplying ligand constituting the organic ruthenium compound is a compound that coordinates a negatively charged anionic ligand when the ruthenium is decoupled from the central metal. At this time, there may be a counter anion, and it is also possible to have a ruthenium cation and an anion forming an ion pair as a counter ion. -15-200302399 Specific examples of monomers used in the preparation of the alicyclic olefin resin are described below. Cycloaliphatic olefin monomers without an acidic group such as bicyclo [2 · 2. .1] heptane-2-Huoxi (common name: pro-norbornene), 5-methyl-bicyclo [2 · 2 · 1] heptane -2 -ene, 5,5- dimethyl-bicyclo [2.2.1] hept-2-ene, 5-ethyl-bicyclo [2.2.1] hept-2-ene, 5-butyl-bicyclo [2.2.1] Hept-2-ene, 5-hexyl-bicyclo-2 -ene, 5-octyl-bicyclo [2.2.1] hept-2-ene, 5-octadecyl-bicyclo [ 2 · 2 · 1] hept-2-ene, 5-ethylidene-bicyclo [2.2.1] hept-2-ene, 5-methylene-bicyclo [2.2.1] hept-2-ene, 5-vinyl-bicyclo [2.2.1] heptan-2 · dilute, 5-propenyl-bicyclo [2.2.1] hept-2-ene, 5-methoxy-hydrocarbylmethyl-bicyclo [2 · 2 · 1] hept-2-ene, 5-cyano-bicyclo [2 · 2 · 1] hept-2-ene, 5-ethoxycarbonyl-bicyclo [2.2.1] hept-2-ene , Bicyclo [2.2.1] hept-5-enyl-2-methylpropionate, bicyclo [2 · 2 · 1] hept-5-enyl-2-methyloctanoate, 5_jing Methylmethylbicyclo [2.2.1] hept-2-ene, 5, 6-bis (hydroxymethyl) -bicyclo [2.21] hept-2-ene, 5-hydroxy-I-propylbicyclo [2.2 .1] hept-2-ene, 5,6-di-residue-bicyclo [2.2.1] hept-2-ene, bicyclo [2.2.1] hept-2-enyl-5, 6-dijunction Acid imine, 5-ring Amyl-bicyclo [2.2.1] hept-2-ene, 5-cyclohexyl-bicyclo [2.2.1] hept-2-ene, 5-cyclohexenyl-bicyclo [2 · 2 · 1] Hept-2-ene, 5'phenyl-bicyclo [2.2.1] hept-2-ene, tricyclo [4.3.0.12'5] dec-3,7-diene (common name: dicyclopentadiene ), Tricyclic [4 · 3 · 0 · 12, 5] dec-3 -ene, tricyclic [4.3.0.I2,5] eleven-3, 7-diene, tricyclic [4 · 3 · 0 I2,5] undec_ 3, 8-diene, tricyclic [4.3.0.I2,5] undec-3-ene, tetracyclic [7 · 4.0.11 (), 13.02 · 7] 13 _2,4,6-11-tetraene (alias: 1,4-methanol-tetrahydrofluorene), tetracyclic [Sj.O.l11'14 』2 · 8] fourteen-200302399

3,5,7,12-11-四烯(別名:1,4-甲醇-1,4,4,5,10,1〇3-六氫 蒽)、四環[4 · 4 . 0 · 12 ’5 . Γ · 1Q ]十二-3 -烯(慣用名:四氫環十 二烯)、8 -甲基-四環[4.4.0.12,5·Γ,1()]十二-3-烯、8 -乙基 -四環[4.4.0.12’5.17’1Q]十二-3-烯、8 -亞甲基-四環 [4.4.0. I2,5.17,1G]十二-3-烯、8 -亞乙基-四環 [4.4.0. I2’5.17’1G]十二-3-烯、8-乙烯基-四環 [4.4.0. I2’5.17’1G]十二-3-烯、8-丙烯基-四環 [4.4.0.12,5.17’1G]十二-3-烯、8 -甲氧基羰基-四環 [4.4.0. I2’5.17,1Q]十二-3-烯、8 -甲基-8-甲氧基羰基-四環 [4.4.0. I2,5.17’1G]十二-3-烯、8 -羥基甲基-四環 [4.4.0. I2,5.17,1Q]十二-3-烯、8 -羥基羰基-四環 [4.4.0. I2,5.17’1G]十二-3-烯、8-環戊基-四環 [4.4.0. I2’5.17’1Q]十二-3-烯、8 -環己基-四環 [4.4.0.12’5.17’1G]十二-3-烯、8 -環己烯基-四環 [4.4.0.12,5·Γ’1()]十二-3-烯、8-苯基-四環 [4.4.0.12,5.17,1()]十二-3-烯、五環[6.5.1.1 3,6.0 2,7.0 9’13] 十五-3,10-二烯、六環[7.4.0.13,6.11(),13.02,7]十五-4,11-二烯、5 -苯基二環[2.2.1]庚-2-烯、四環[6.5.0. 12,5.08,13] 十三-3 , 8,1 0,1 2 -四烯(亦稱爲1,4 -甲醇-1,4 , 4 a,9 a -四氫 芴)、四環[6·6·0·12,5·08,13]十三-3,8,10,12-四烯(亦稱爲 1,4-甲醇-1,4,4&,5,10,1(^-六氫蒽)、3,4-二甲基環戊烯 、3 -甲基環己烯、2-(2 -甲基丁基)-1-環己烯、環辛烯、 3 a,5,6,7 a -四氫-4,7 -甲醇-1 Η -茚、如環庚烯之單環環烯; 乙烯基環己烯或乙烯基環己烯之乙烯系脂環族烴系單體; -17 - 200302399 環戊一烦、環己二烯之脂環族共轭二烯系單體等。 酸性基之具有羥基羰基的脂環族烯烴單體例如5 -羥基羰 基二環[2 · 2 . 1 ]庚—2 -烯、5 -羥基羰基甲基二環[2 . 2 . 1 ]庚-2 -烯、5,6 -二羥基羰基二環[2.2.1]庚-2-烯、5 -甲基-5-羥基 羰基二環[2.2.1]庚-2-烯、5 -甲基-5-二羥基羰基二環 [2.2.1]庚-2-烯、5 -羥基羰基-5-羥基羰基甲基二環[2.2.1] 庚-2 -烯等之二環庚烯衍生物;5 -羥基羰基四環 [4 · 4 · 0 . I2·5 · I7,1。]十二-3-烯、5-羥基羰基甲基四環 [4·4·0·12.5.17,1()]十二-3-烯、5,6-二羥基羰基四環 [4.4.0. I2.5. 17,1G]十二-3-烯、5 -甲基-5-羥基羰基四環 [4·4·0.12·5.17,1()]十二-3-烯、5-羥基羰基-5-羥基羰基甲 基四環[4.4.0. I2.5. l7llG]十二-3-烯;8 -羥基羰基四環 [4.4.0. I2.5. I7,1。]十二-3-儲、8-經基鑛基甲基四環 [4.4.0.12.5.17,1()]十二-3-烯、8,9-二羥基羰基四環 [4.4.0.125.Γ,1{)]十二-3-烯、8 -甲基-8-羥基羰基四環 [4.4.0.125.17’1()]十二-3-烯、8-甲基-8,9-二羥基羰基四 環[4·4.0.12.5·Γ’1()]十二-3-烯、8 -羥基羰基-8-羥基羰基 甲基四環[4.4.0.12 5.1?,1()]十二-3-烯等之四環十二烯衍生 物;11-羥基羰基六環[6.6.l·l3’6·11()’13·02·7·09,14]十七-4-烯、ll-羥基羰基甲基六環[6·6·1·l3’6.11()’l·3·02·7·09,l·4]十 七-4-烯、11,12 -二經基鑛基六環 [6.6.1.13,6.11°,13.〇27.〇9,14]十七_4-烯、11-甲基-11,12- 二羥基羰基六環+ 11-羥基羰基-11-羥基锻基甲基六環 - 1 8 - 200302399 9,14]十七-4-烯等之六環十七烯衍 生物等。 作爲酸性基之二殘酸酐殘基鍵結的脂環族矯煙單體例如 二環[2 . 2 . 1 ]庚 _ 2 -烯 _ 5,6 -二羧酸酐、5 -甲基二環[2 · 2 · 1 ] 庚-2 -烯-5,6 -二竣酸酐等之二環庚燦衍生物、四環 [4.4.0.12.5.17,1()]十二-3-烯-8,9-二羧酸酐、8-甲基四環 [4.4.0.12.5.17,1()]十二-3-烯-8,9-二羧酸酐等之四環十二 烯衍生物、六環[^^^人广’㈠^人…’十七-扣烯-11,12-二羧酸酐、U_ 甲基六環㈧·6·1·13’6·11^’13·02·7·09’14] 十七_ 4 -烯-1 1,1 2 -二羧酸酐等之六環十七烯衍生物。 脂環族烯烴單體可以單獨或2種以上組合使用° 可與脂環族烯烴單體共聚合的單體例如乙烯、丙烯、1-丁烯、卜戊烯、1-己烯、3 -甲基-1-丁烯、3 -甲基-1-戊烯 、3_乙基-卜戊烯、4 -甲基-1-戊烯、4 -甲基-1-己烯、4,4-二甲基-卜己烯、4,4-二甲基-1-戊烯、4 -乙基-1-己烯、3-乙基-1-己烯、1-辛烯、1-癸烯、1-十二烯、1-十四烯、1-十六烯、卜十八烯、1-二十烯等之碳數2〜20之乙烯或α_ 烯烴;1,4 -己二烯、4 -甲基-1,4 -己二烯、5 -甲基·1,4 -己 二烯、1,7-辛二烯等之非共軛二烯;等。此等單體可以單 獨或2種以上組合使用。 調整脂環族細經聚合物之重量平均分子量的方法,例如 於脂環族烯烴之開環聚合時對單體全量而言添加〇 .丨〜丄〇 莫耳%乙烯化合物或二烯化合物之分子量調整劑的方法。分 子量調整劑之使用量少時,製得較高重量平均分子量之聚 -19- 200302399 合物,反之過多時製得具有較低重量平均分子量之聚合物 〇 作爲分子量調整劑使用的乙烯化合物例如1 - 丁嫌、1 -戊 烯、1 -己烯、1 -辛烯等之α -烯烴化合物;苯乙烯、乙烯甲 苯等之苯乙烯化合物;乙基乙烯醚、異丁基乙烯醚、烯丙 基環氧丙醚等之醚化合物;烯丙基氯化物等之含鹵素之乙 烯化合物;醋酸烯丙酯、烯丙醇、環氧丙基甲基丙烯酸酯 等之含氧的乙烯化合物;丙烯酸醯胺等之含氮的乙烯化合 物;等。二烯化合物例如1,4 -戊二烯、1,5 -己二烯、1,6 -庚二烯、2 -甲基-1,4-戊二烯、2,5 -二甲基-1,5 -己二烯等 之非共軛二烯化合物;1,3 -丁二烯、2 -甲基-1,3 -丁二烯、 2,3-二甲基-1,3-丁二烯、1,3-戊二烯、1,3-己二烯等之共 軛二烯化合物。於此等之中以1 -己烯之α _烯烴化合物更佳 〇 使用該單體所得的脂環族烯烴樹脂,例如脂環族烯烴單 體之開環聚合物及其加氫物、脂環族烯烴單體之加成聚合 物、脂環族烯烴單體與乙烯化合物之加成聚合物、單環環 烯聚合物、脂環族共軛二烯聚合物、乙烯系脂環族烴聚合 物及其加氫物、芳香族烯烴聚合物之芳香環加氫物等。於 此等之中,以脂環族烯烴單體之開環聚合物及其加氫物、 脂環族烯烴單體之加成聚合物、脂環族烯烴單體與乙烯化 合物之加成聚合物、芳香族烯烴聚合物之芳香環加氫物較 佳,更佳者爲脂環族烯烴單體之開環聚合物的加氫物。 脂環族烯烴樹脂可以單獨使用或2種以上組合使用。 - 20- 200302399 本發明所使用的(B)成份之酸發生劑系爲藉由活性放射線 照射產生酸之化合物。發生酸之種類沒有特別的限制,爲 製得正型圖樣時,以具有呈現羧基或苯酚性羥基等弱酸性 之基的化合物較佳,更佳者爲藉由如醌二疊氮磺酸酯化合 物之羧基產生酸的化合物。 醌二疊氮磺酸酯化合物之製法沒有特別的限制,以常法 在丙酮、二噚烷、四氫呋喃等之溶劑中、在三乙胺等之鹼 存在下使1,2 -萘醌二疊氮-5 -磺酸氯化物等之醌二疊氮磺 酸鹵化物與2,3,4-三羥基二苯甲酮、2,3,4,4’ -四羥基二 苯甲酮、2 -雙(4 -羥基苯基)丙烷、參(4 -羥基苯基)甲烷、 1,1,1-參(4 -羥基-3-甲基苯基)乙烷、1,1,2,2 -肆(4 -羥基 苯基)乙烷、1,1,3 -參(2,5 -二甲基-4-羥基苯基)-3 -苯基丙 烷、酚醛淸漆樹脂、苯酚類與二環戊二烯共聚合所得的寡 聚物(專利第3 09 09 9 1號公報)等具有1個以上苯酚性羥基 之苯酚化合物反應製得。 醌二疊氮磺酸酯化合物之酯化率係以苯酚化合物之苯酚 性羥基的氫原子取代成醌二疊氮磺酸殘基的比例定義。該 酯化率通常爲20〜100莫耳%、較佳者爲40〜100莫耳%、 更佳者爲50〜100莫耳%、最佳者爲60〜100莫耳%。若酯 化率過低時,未曝光部(未照射部)之溶解抑制效果低、解 析度及殘膜率容易降低。 而且,酸發生劑可使用二芳基碘鏺鹽、三芳基毓鹽、苯 基二偶氮鐵鹽、醯亞胺基磺酸酯衍生物、甲苯磺醯化合物 、苯甲基衍生物之羧酸酯化合物、三哄衍生物之鹵化物等 - 21- 200302399 有機鹵素化合物、α,α,-雙(磺醯基)-二偶氮甲烷化合物、 α -羰基-α - α磺醯基二偶氮甲烷化合物、楓化合物、有機磷 酯化合物、有機酸醯胺化合物、有機醯亞胺化合物等之產 生較強酸的化合物,藉此亦可形成負型圖樣。 酸發生劑之量對1 0 0重量份具有酸性基之脂環族烯烴樹 脂而言通常爲0.5〜100重量份、較佳者爲1〜50重量份、 更佳者爲1 0〜30重量份。若酸發生劑之使用量過少時殘膜 率或解像性惡化,而若過多時耐熱性或光透過性會降低。 本發明使用的(C )成份之交聯劑係爲具有與脂環族烯烴樹 脂反應、在脂環族烯烴樹脂間形成交聯構造之作用者,具 體而言有具有2個以上反應性基之化合物。反應性基例如 胺基、羧基、羥基、環氧基、異氰酸酯基、乙烯基等。 交聯劑之具體例如六甲二胺等之脂肪族聚胺類;4,4,-二 胺基二苯醚、二胺基二苯基楓等之芳香族聚胺類;2,6 -雙 (4’ -疊氮苯亞甲基)環己酮、4,4’ -二疊氮二苯基楓等之疊 氮化合物;耐龍、聚六甲二胺對酞酸醯胺、聚六伸甲基異 酞酸醯胺等之聚醯胺類;Ν,Ν,Ν’,Ν,,Ν,,,Ν,,-(六烷氧基甲基) 蜜胺等之蜜胺類;Ν,Ν’,Ν”,Ν-(四烷氧基甲基)乙炔脲等之 乙炔脲類;乙二醇二(甲基)丙烯酸酯、環氧基丙烯酸酯樹 脂等之丙烯酸酯化合物;六伸甲基二異氰酸酯系聚異氰酸 酯、異佛爾酮二異氰酸酯系聚異氰酸酯、伸甲苯基二異氰 酸酯系聚異氰酸酯等之異氰酸酯系化合物;加氫二苯基甲 k 一異氰酸酯系聚異氰酸酯;1,4 -二-(經基甲基)環己酮、 1,4 -二-(羥基甲基)原冰片烷;1,3,4 -三羥基環己酮;含脂 - 22- 200302399 環族構造之環氧化合物或樹脂等。此等可以作爲一種或二 種以上混合物使用。 於此等之交聯劑中,就耐熱性而言以N -烷氧基甲基化蜜 胺或N-烷氧基甲基化乙炔脲較佳。此等之化合物以PL_丨17〇 、PL-1174、UFR65、CYMEL3 00、CYMEL303 (以上爲三井塞迪 克(譯音)公司製)、BX- 4000、尼卡拉克(譯音)MW-30、MX290( 以上爲三和化學公司製)等之市售品容易得手。而且,就對 由感放射線性樹脂組成物所形成的樹脂膜之基板等的密接 性較佳而言,以使用異氰酸酯系化合物較佳。 交聯劑之量對1 00重量份脂環族烯烴樹脂而言通常爲1 〜100重量份、較佳者爲5〜80重量份、更佳者爲10〜70 重量份、最佳者爲20〜50重量份。若交聯劑之使用量過多 時,耐熱性、電特性、吸水性容易不充分。 本發明中使用的(D )成份之溶劑係爲可使上述各成份溶解 或分散者,該溶劑例如甲醇、乙醇、丙醇、丁醇、3 -甲氧 基-3 -甲基丁醇等之醇類;四氫呋喃、二噚烷等之環狀醚類 ;甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯等之溶纖劑酯類 ;乙二醇單甲醚、乙二醇單乙醚、乙二醇單丙醚、乙二醇 單第3 -丁醚、丙二醇單乙醚、丙二醇單丙醚、丙二醇單丁 醚、二乙二醇單甲醚、二乙二醇單乙醚、二丙二醇單甲醚 等之醇醚類;丙二醇丙醚乙酸酯等之丙二醇烷醚乙酸酯類 •,苯、甲苯、二甲苯等之芳香族烴類、甲基乙酮、環己酮 、2 -庚酮、4 -羥基-4-甲基-2-庚酮等之酮類;2 -羥基丙酸 乙酯、2 -羥基-2-甲基丙酸乙酯、2 -羥基-2-甲基丙酸乙酯 -23- 200302399 、乙氧基醋酸乙酯、羥基醋酸乙酯、2 -羥基-3 -甲基丁酸甲 酯、3 -甲氧基丙酸甲酯、3 -甲氧基丙酸乙酯、3 -乙氧基丙 酸乙酯、3 -乙氧基丙酸甲酯、3 -乙氧基丙酸乙酯、3 -乙氧 基丙酸甲酯、醋酸乙酯、醋酸丁酯、乳酸乙酯等之酯類;N -甲基甲醯胺、N,N -二甲基乙醯胺、二甲基亞楓、γ-丁內酯 等之非質子性極性溶劑;等。此等溶劑使用可使各成份均 勻溶解或分散的充分量。 本發明之感放射線性樹脂組成物中以防止輝紋(塗覆線條 後)、提高顯像性等爲目的時,可含有聚環氧乙烷月桂醚、 聚環乙烷二月桂酸酯等之非離子系界面活性劑;新秋田化 成公司製耶夫頓布(譯音)系、大日本油墨化學工業公司製 梅卡法克(譯音)系、住友斯里耶母(譯音)公司製福龍拉(譯 音)系、旭玻璃公司製亞撒西卡頓(譯音)系等之氟系界面活 性劑;信越化學公司製有機矽氧烷聚合物ΚΡ系等之矽烷系 界面活性劑;共榮社油脂化學工業公司製聚福隆(譯音)系 等之丙烯酸共聚物系界面活性劑;等之各種界面活性劑。 界面活性劑對1 00重量份感放射線性樹脂組成物之固成份( 溶劑以外之成份)而言通常爲2重量份以下、較佳者爲1重 量份以下,視其所需予以使用。 本發明之感放射線性樹脂組成物中以提高與基板之黏合 性爲目的時,亦可添加γ -環氧丙氧基丙基三甲氧基矽烷等 之官能性矽烷偶合劑等作爲黏合助劑。黏合助劑之量對100 重量份具有酸性基之脂環族烯烴樹脂而言通常爲2 0重量份 以下、較佳者爲0.05〜10重量份、更佳者爲1〜1〇重量份 - 24- 200302399 另外,於本發明之感放射線性樹脂組成物中視其所需亦 可含有增感劑、抗靜電劑、保存安定劑、消泡劑、顏料、 染料等。 二 使上述各成份以常法混合、且溶解或分散於溶劑中,調 ; 製感放射線性樹脂組成物。所調製的本發明感放射線性樹 脂組成物之固成份濃度沒有特別的限制,通常爲5〜40重 量%。 · 所調製的感放射線性樹脂組成物以均勻的溶液較佳,此 時使用0 · 2〜1 μιη之過濾器除去異物等之後提供使用較佳。 本發明之感放射線性樹脂組成物適合作爲裝置顯示元件 、積體電路元件等之元件、或液晶顯示器用濾色片等之保 護膜、爲使元件表面或配線平坦化之平坦化膜、爲保持電 絕緣性之絕緣膜(例如包含薄型電晶體型液晶顯示元件或積 體電路元件之電絕緣膜的層間絕緣膜及焊接光阻膜等)之各 種電子零件用樹脂膜的材料。 Φ 使本發明之感放射線性樹脂組成物塗覆於基板上以形成 樹脂膜’且在該樹脂膜上圖樣狀照射活性放射線,在樹脂 膜上形成潛像圖樣。藉由使具有潛像圖樣之樹脂膜與顯像 液接觸,可使圖樣顯像化。 在基板上形成樹脂膜的方法可以爲在基板表面上塗覆本 發明之感放射線性樹脂組成物並予以乾燥,在基板上直接 形成樹脂膜的方法,亦可以爲在至少一面由聚對酞酸乙二 酯薄膜、聚丙烯薄膜、聚乙烯薄膜等之樹脂所成薄膜等載 -25- 200302399 體上塗覆本發明之感放射線性樹脂組成物並予以乾燥,在 載體上形成樹脂膜後、使附有載體之樹脂膜重疊於基板上 的方法。使附有載體之樹脂膜重疊於基板上時,使用加壓 積層器、加壓壓製、真空積層器、真空壓製、輥積層器等 之加壓機予以加熱壓熔者較佳。加熱壓熔時之溫度通常爲 30〜250 °C、較佳者爲70〜20(TC,壓熔力通常爲10kPa〜 2 0MPa、較佳者爲 lOOkPa〜lOMPa,壓熔時間通常爲 30秒 〜5小時、較佳者爲1分鐘〜3小時,加熱壓著時通常調整 至lOOkPa〜IPa、較佳者爲40kPa〜10Pa之氣氛壓力較佳 〇 在基板表面或載體上塗覆本發明之感放射線性樹脂組成 物的方法,例如可採用噴霧法、輥塗覆法、回轉塗覆法等 各種方法。然後,使所得塗膜藉由加熱乾燥,製得不具流 動性之樹脂膜。在基板表面上直接形成樹脂膜時之加熱條 件係視各成份之種類、配合比例等而不同,通常在60〜1 20 °C下加熱1 〇〜600秒。在基板表面上塗覆感放射線性樹脂 組成物並予以乾燥,在基板上直接形成樹脂膜的方法中, 一般將爲乾燥之加熱稱爲預烘烤(pre-bake)。 在所得樹脂膜上照射活性放射線、且在樹脂膜上形成潛 像圖樣。活性放射線之種類沒有特別的限制,例如紫外線 、遠紫外線、X光線、電子線、質子束線等,其中以可視 光線、紫外線較佳。照射的放射線量可視樹脂膜之種類或 厚度任意設定。圖樣之形成可藉由經光罩照射活性放射線 的方法’以可藉由以電子線等直接描繪的方法。 - 2 6 - 200302399 放射線照射後藉由在基板上具有潛像圖樣之樹脂膜與顯 像液接觸’除去照射部且使潛像圖樣顯像化(顯像)。於顯 像前視其所需可進行加熱(PEB處理:後顯像烘烤(p〇 s t Exposure Bake ))。藉由進行PEB處理,可減少溶解於顯像 液中必須除去的不需樹脂成份等顯像殘渣。脂環族烯烴樹 脂具有鹼溶解性極性基、特別是具有酸性基時,較容易藉 由顯像液流出,故較佳。 顯像液一般爲使鹼化合物溶解於水中之水性液。鹼化合 物例如氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、甲基矽酸 鈉、銨水等之無機鹼類;乙胺、正丙胺等之一級胺類;二 乙胺、二正丙胺等之二級胺類;三乙胺、甲基二乙胺、N -甲基吡咯烷酮等之三級胺類;二甲基乙醇胺、三乙醇胺等 之醇胺類;四甲銨氫氧化物、四乙銨氫氧化物、四丁銨氫 氧化物、膽鹼等之四級銨鹽;吡咯、哌啶、1,8 -二偶氮二 環[5·4·0]十一 -7-烯、1,5 -二偶氮二環[4·3·0]壬-5-烯等 脂環狀胺類;等。此等鹼化合物可以單獨使用或2種以上 混合使用。 顯像液中亦可適量添加甲醇、乙醇等之水溶性有機溶劑 或界面活性劑等。 顯像液以使用感放射線性樹脂組成物所形成的樹脂膜之 照射部以1 μπι/分以上之速度溶解、且使樹脂膜之未照射部 以0 . 5 μιη /分以下之速度溶解者較佳,藉此可得特別優異的 解析度與殘膜率。就該觀點而言使用本發明感放射線性樹 脂組成物時,顯像液使用濃度爲〇 . 〇 1〜1 · 〇重量%、較佳者 -27- 200302399 爲0 · 1〜0 · 8重量%之四甲銨氫氧化物水溶液爲宜。 顯像時間通常爲30〜1 80秒。顯像液與具有潛像圖樣之 樹脂膜的接觸方法,沒有特別的限制,例如可採用攪拌法 、噴霧法、浸漬法等。顯像溫度沒有特別限制,通常爲15 〜35°C、較佳者爲20〜30°C。 如此在基板上形成具有目的圖樣之樹脂膜。 藉由顯像在樹脂膜上形成圖樣後,視其所需爲除去在基 板上基板內面、基板端部殘留不需的顯像殘渣時,可使該 基板與沖洗液藉由常法接觸。與沖洗液接觸的基板通常藉 由以壓縮空氣或壓縮氮氣乾燥,以除去基板上之沖洗液。 視其所需,亦可在形成有圖樣之樹脂膜表面上全面照射活 性放射線。 在基板之樹脂膜上形成圖樣後’視其所需可藉由加熱使 樹脂膜硬化。加熱方法係藉由熱板、烤箱等加熱裝置進行 。加熱溫度通常爲150〜25(TC、較佳者爲180〜220 °C,加 熱時間例如使用熱板時通常爲5〜60分鐘,使用烤箱時通 常爲30〜90分鐘。後烘烤以在低氧氣氛中、具體而言氧濃 度爲lOppm以下之氣氛中進行較佳。 如上詳述,使用本發明之感放射線性樹脂組成物,在基 板上形成樹脂膜、且在該樹脂膜上圖樣狀照射活性放射線 ’在樹脂膜上形成潛像圖樣,然後藉由使樹脂膜與顯像液 接觸以使圖樣顯像化的圖樣形成方法,在樹脂膜上形成圖 樣。形成有圖樣之樹脂膜適合利用作爲保護膜、平坦化膜 、層間絕緣膜等之電子零件用樹脂膜。 -28- 200302399 (四)實施方式 【實施例】 於下述中藉由合成例及實施例等更具體地說明本發明。 各例中之份及%沒有特別限定時爲重量基準(質量基準)。 [合成例1 ] 使70份8-羥基羰基四環[4.4.0.12,5.17,1G]-十二碳_3· 烯、30 份四環[4 · 4 · 0 · I2’5 · 17’1G]-十二碳-3-烯 ' 10 份 1-己烯、0.04份1,3 -二莱基咪唑畊-2-銥)(三環己基膦)苯亞 甲基釕二氯化物、4 0 0份四氫呋喃加入氮氣取代的玻璃製 耐壓反應容器中,加熱至70 °C、攪拌2小時、製得反應溶 液。以氣體色層分析法確認在該反應溶液中沒有殘留單體 。使所得的反應溶液注入大量正己烷中以使固成份析出。 所得固成份以正己烷洗淨後,在l〇〇°C下減壓乾燥18小時 ,製得白色固體開環復分解共聚物。 在附有攪拌機之壓熱鍋中添加1 〇〇份該開環復分解共聚 物、400份四氫呋喃、5份作爲加氫觸媒之鉑/碳(1 0%鉑), 在氫壓l.OMPa、60°C下氫化8小時。過濾該反應溶液後, 與上述相同地在大量正己烷中凝固、乾燥,製得氫化率 100%(藉由W-NMR光譜測定)具有酸性基之脂環族烯烴樹脂 (聚合物a )。 [合成例2]· 除各改成78份8-羥基羰基四環[4·4·0·12’5·Γ’1()]-十二 碳-3-烯、22份四環[4.4.0.12’5.17’1()]-十二碳-3-烯、8份 1 -己烯外,與合成例1相同地製得氫化率1 00%、具有酸性 200302399 基之脂環族烯烴樹脂(聚合物b) ° [合成例3 ] 除各改成71份8-羥基羰基四環[4·4·0·12,5·17’1()]-十二 碳-3-烯、29 份四環[4.4·0.12’5·Γ’1()] -十二碳-3-儲、20 份1 -己烯外,與合成例1相同地製得氫化率1 0 0 %、具有酸 性基之脂環族烯烴樹脂(聚合物c ) ° [合成例4 ] 除各改成76份8-羥基羰基四環[4.4.0.12,5.17,1()]-十二 碳-3-烯、24 份四環[4·4·0·12,5.Γ,1()] -十二碳-3-烯、8 份 1 -己烯外,與合成例1相同地製得氫化率1 0 0 %、具有酸十生 基之脂環族烯烴樹脂(聚合物d )。 [合成例5 ] 於特開平1 1 - 52574號公報之合成例5揭示的方法中’除 使觸媒投入時之溫度由60°C改爲80°C、聚合保持溫度由80 °C改爲1 1 0°C外,以該公報之合成例5記載的方法爲基準’ 可製得氫化率100%、加水分解率爲75%之具有酸性基之脂 環族烯烴樹脂(聚合物e )。具體例如藉由下述方法合成聚 合物e。 將250份8 -甲基-8-甲氧基羰基四環[4.4.0.I2,5」7,10]-3-十二烯、180份1 -己烯、及7 5 0份甲苯加入經氮氣取代 的反應容器中,加熱至8 0 °C。於其中加入〇 · 6 2份三甲基銘 (1.5莫耳/1)之甲苯溶液、3.7份第3-C4H5〇H/CH3〇H改性的 (第 3-C4H5OH/CH30/W = 0.35/0.3/l ;莫耳比)之 WCU 溶液( 濃度0 · 0 5莫耳/ 1 )、在1 1 〇 °c下加熱攪拌3小時,製得開壤 200302399 聚合物溶液。該聚合反應之聚合轉化率爲90% ° 將4,000份所得聚合物溶液置於壓熱鍋中,於其中加入 30.48 份 RuHC1(CO)[P(C6H5)3],在氫氣壓爲 l〇〇kg/cm2、 反應溫度1 6 5 °C之條件下加熱攪拌3小時。使所得反應溶液 冷卻後,使氫氣放壓,製得加氫聚合物溶液。將如此所得 的加氫聚合物注入於大量甲醇中,使聚合物凝固。該所得 的加氫聚合物之氫化率實質上爲100%。使100份所得加氫 聚合物、100份N -甲基-2-吡咯烷酮、500份丙二醇、84.5 份氫氧化鉀(濃度85%)加入反應器中,在190°C下攪拌1 · 5 小時。使所得反應溶液注入大量水、四氫呋喃及鹽酸之混 合溶液以使加水分解物凝固。使凝固聚合物水洗、乾燥, 製得作爲加水分解聚合物之聚合物e。使所得加水分解聚 合物之加水分解率爲7 5 %。 [合成例6 ] 除使聚合保持溫度由110 °C改爲100 °C外,與合成例5相 同地製得氫化率100%、加水分解率75%之具有酸性基之脂 環族烯烴樹脂(聚合物f )。 [合成例7 ] 除使聚合保持溫度由110°C改爲9(TC外,與合成例5相 同地製得氫化率100%、加水分解率75%之具有酸性基之脂 環族烯烴樹脂(聚合物g )。 [比較合成例1 ] 以特開平1 1 - 52 5 74號公報之合成例5揭示的方法爲基準 ,使8 -甲基-8-甲氧基羰基四環[4.4.0.12,5.17,1()]-3-十二 -31- 200302399 烯開環聚合’製得重量平均分子量爲1 7, 00 0之開環聚合物 。然後’使所得開環聚合物加氫後,實施加水分解1 . 5小 時,製得氫化率1 00%、加水分解率7 5%、具有酸性基之脂 環族烯烴樹脂(聚合物h )。 [比較合成例2 ] 除各改爲90份8-羥基羰基四環[4.4.0. I2,5. 17,1G]十二 碳-3-烯、10 份四環[4·4·0·12,5·17,1()]十二碳-3-烯、9 份 1 -己烯外,與合成例1相同地製得氫化率1 〇〇%、加水分解 率7 5 %、具有酸性基之脂環族烯烴樹脂(聚合物I )。 於上述合成例所得的聚合物a〜I之物性如表1所示。3,5,7,12-11-tetraene (alias: 1,4-methanol-1,4,4,5,10,103-hexahydroanthracene), tetracyclic [4 · 4. 0 · 12 '5. Γ · 1Q] dodec-3-ene (common name: tetrahydrocyclododecene), 8-methyl-tetracyclo [4.4.0.12,5 · Γ, 1 ()] dodec-3- Ene, 8-ethyl-tetracyclo [4.4.0.12'5.17'1Q] dodec-3-ene, 8-methylene-tetracyclo [4.4.0. I2, 5.17, 1G] dodec-3-ene , 8-ethylene-tetracyclo [4.4.0. I2'5.17'1G] dodec-3-ene, 8-vinyl-tetracyclo [4.4.0. I2'5.17'1G] dodec-3- Ene, 8-propenyl-tetracyclo [4.4.0.12,5.17'1G] dodec-3-ene, 8-methoxycarbonyl-tetracyclo [4.4.0. I2'5.17, 1Q] dodec-3- Ene, 8-methyl-8-methoxycarbonyl-tetracyclo [4.4.0. I2,5.17'1G] dodec-3-ene, 8-hydroxymethyl-tetracyclo [4.4.0. I2,5.17 , 1Q] dodec-3-ene, 8-hydroxycarbonyl-tetracyclo [4.4.0. I2,5.17'1G] dodec-3-ene, 8-cyclopentyl-tetracyclo [4.4.0. I2 ' 5.17'1Q] dodec-3-ene, 8-cyclohexyl-tetracyclo [4.4.0.12'5.17'1G] dodec-3-ene, 8-cyclohexenyl-tetracyclo [4.4.0.12,5 · Γ'1 ()] dodec-3-ene, 8-phenyl-tetracyclic [4.4.0.12, 5.17, 1 ()] dodec-3-ene, pentacyclic [6.5. 1.1 3,6.0 2,7.0 9'13] Pentadec-3,10-diene, hexacyclo [7.4.0.13,6.11 (), 13.02,7] Penta-4,11-diene, 5-phenyl Bicyclo [2.2.1] hept-2-ene, tetracyclo [6.5.0. 12,5.08,13] tridecyl-3, 8,1 0,1 2 -tetraene (also known as 1,4-methanol -1,4, 4 a, 9 a -tetrahydrofluorene), tetracyclic [6 · 6 · 0 · 12,5 · 08,13] thirteen-3,8,10,12-tetraene (also known as 1,4-methanol-1,4,4 &, 5,10,1 (^-hexahydroanthracene), 3,4-dimethylcyclopentene, 3-methylcyclohexene, 2- (2- Methylbutyl) -1-cyclohexene, cyclooctene, 3 a, 5,6,7 a -tetrahydro-4,7 -methanol-1 fluorene -indene, monocyclic cycloolefins such as cycloheptene; Vinyl cyclohexene or ethylene cycloaliphatic hydrocarbon monomer of vinyl cyclohexene; -17-200302399 cyclopentadiene, cyclohexadiene alicyclic conjugated diene monomer, etc. Acidic group Cycloaliphatic olefin monomers having a hydroxycarbonyl group such as 5-hydroxycarbonylbicyclo [2 · 2.1.1] hept-2-ene, 5-hydroxycarbonylmethylbicyclo [2.2.1] heptan-2- Ene, 5,6-dihydroxycarbonylbicyclo [2.2.1] hept-2-ene, 5-methyl-5-hydroxycarbonylbicyclo [2.2.1] hept-2-ene, 5-methyl-5 -Dihydroxy Dicyclo [2.2.1] hept-2-ene, 5-hydroxycarbonyl-5-hydroxycarbonylmethylbicyclo [2.2.1] hept-2-ene, and other bicycloheptene derivatives; 5-hydroxycarbonyl Four rings [4 · 4 · 0. I2 · 5 · I7,1. ] Dodec-3-ene, 5-hydroxycarbonylmethyltetracyclo [4 · 4.0 · 12.5.17,1 ()] Dodec-3-ene, 5,6-dihydroxycarbonyltetracyclo [4.4. 0. I2.5. 17, 1G] dodec-3-ene, 5-methyl-5-hydroxycarbonyl tetracyclo [4 · 4 · 0.12 · 5.17, 1 ()] dodec-3-ene, 5- Hydroxycarbonyl-5-hydroxycarbonylmethyltetracyclo [4.4.0.12.5.17G] dodec-3-ene; 8-hydroxycarbonyltetracyclo [4.4.0.12.2.5.I7,1. ] Twelve-3-store, 8-mercaptomethyl tetracycline [4.4.0.12.5.17, 1 ()] dodec-3-ene, 8,9-dihydroxycarbonyl tetracyclic [4.4.0.125. Γ, 1 {)] dodec-3-ene, 8-methyl-8-hydroxycarbonyl tetracyclo [4.4.0.125.17'1 ()] dodec-3-ene, 8-methyl-8,9 -Dihydroxycarbonyltetracyclo [4 · 4.0.12.5 · Γ'1 ()] dodec-3-ene, 8-hydroxycarbonyl-8-hydroxycarbonylmethyltetracyclo [4.4.0.12 5.1 ?, 1 ()] Tetracyclododecene derivatives such as dodec-3-ene; 11-hydroxycarbonyl hexacyclic [6.6.l·l3'6 · 11 () '13 · 02 · 7 · 09, 14] 17-4- Alkenes, ll-hydroxycarbonylmethylhexacyclo [6 · 6 · 1 · l3'6.11 () 'l · 3 · 02 · 7 · 09, l · 4] hepta-4-ene, 11, 12-secondary Hexacyclic [6.6.1.13, 6.11 °, 13.〇27.09, 14] Hepta-4-ene, 11-methyl-11, 12-dihydroxycarbonyl hexacyclic + 11-hydroxycarbonyl- 11-Hydroxymethylhexacyclo-1 18-200302399 9,14] Hexadecene derivatives such as hepta-4-ene and the like. The alicyclic orthodontic monomers which are the two residual acid anhydride residues of the acidic group are, for example, bicyclo [2.2.1] hept-2-ene-5,6-dicarboxylic anhydride, 5-methylbicyclo [ 2 · 2 · 1] Bicycloheptane derivatives such as hept-2-en-5,6-di-anhydride, tetracyclo [4.4.0.12.5.17, 1 ()] dodec-3-ene-8, 9-dicarboxylic anhydride, 8-methyltetracyclo [4.4.0.12.5.17,1 ()] dodec-3-ene-8,9-dicarboxylic anhydride, tetracyclic dodecene derivatives, hexacyclic [ ^^^ renguang '㈠ ^ 人 ...' hepta-decene-11,12-dicarboxylic anhydride, U_methylhexacyclofluorene · 6 · 1 · 13'6 · 11 ^ '13 · 02 · 7 · 09 '14] Hexadecene 4-ene-1,1,2-dicarboxylic anhydride and other hexacycloheptadecene derivatives. The alicyclic olefin monomer can be used singly or in combination of two or more ° Monomers copolymerizable with the alicyclic olefin monomer such as ethylene, propylene, 1-butene, pentene, 1-hexene, 3-methyl Methyl-1-butene, 3-methyl-1-pentene, 3-ethyl-pentene, 4-methyl-1-pentene, 4-methyl-1-hexene, 4,4- Dimethyl-buhexene, 4,4-dimethyl-1-pentene, 4-ethyl-1-hexene, 3-ethyl-1-hexene, 1-octene, 1-decene , 1-dodecene, 1-tetradecene, 1-hexadecene, octadecene, 1-icosene, etc. 2 or 20 carbon or ethylene olefins; 1,4-hexadiene, Non-conjugated dienes such as 4-methyl-1,4-hexadiene, 5-methyl-1,4-hexadiene, 1,7-octadiene, etc .; and the like. These monomers can be used alone or in combination of two or more. A method for adjusting the weight-average molecular weight of the alicyclic fine warp polymer, for example, when the ring-opening polymerization of the alicyclic olefin is added to the total amount of the monomer, the molecular weight of the ethylene compound or the diene compound is 0.1. Method of adjusting the agent. When the molecular weight adjuster is used in a small amount, a poly-19-200302399 compound having a higher weight average molecular weight is prepared, and when it is excessive, a polymer having a lower weight average molecular weight is produced. Ethylene compounds used as molecular weight adjusters such as 1 -Α-olefin compounds such as butan, 1-pentene, 1-hexene, and 1-octene; styrene compounds such as styrene and vinyl toluene; ethyl vinyl ether, isobutyl vinyl ether, allyl Ether compounds such as glycidyl ether; halogen-containing ethylene compounds such as allyl chloride; oxygen-containing ethylene compounds such as allyl acetate, allyl alcohol, and glycidyl methacrylate; ammonium acrylate Etc. nitrogen-containing ethylene compounds; etc. Diene compounds such as 1,4-pentadiene, 1,5-hexadiene, 1,6-heptadiene, 2-methyl-1,4-pentadiene, 2,5-dimethyl-1 Non-conjugated diene compounds such as 1,5-hexadiene; 1,3-butadiene, 2-methyl-1,3-butadiene, 2,3-dimethyl-1,3-butadiene Conjugated diene compounds such as alkene, 1,3-pentadiene, 1,3-hexadiene, and the like. Among these, an α-olefin compound of 1-hexene is more preferable. An alicyclic olefin resin obtained by using the monomer, such as a ring-opening polymer of an alicyclic olefin monomer, a hydrogenated product thereof, and an alicyclic ring Addition polymer of olefinic olefin monomer, addition polymer of alicyclic olefin monomer and ethylene compound, monocyclic cyclic olefin polymer, alicyclic conjugated diene polymer, ethylene alicyclic hydrocarbon polymer And its hydrogenated products, aromatic ring hydrogenated products of aromatic olefin polymers, and the like. Among these, ring-opening polymers with alicyclic olefin monomers and their hydrogenated products, addition polymers of alicyclic olefin monomers, addition polymers of alicyclic olefin monomers and ethylene compounds 2. The aromatic ring hydrogenation product of the aromatic olefin polymer is preferable, and the more preferable one is the hydrogenation product of the ring-opening polymer of the alicyclic olefin monomer. The alicyclic olefin resin can be used alone or in combination of two or more. -20- 200302399 (B) The acid generator used in the present invention is a compound that generates an acid by irradiation with active radiation. There is no particular limitation on the type of acid to be generated. In order to obtain a positive pattern, a compound having a weakly acidic group such as a carboxyl group or a phenolic hydroxyl group is preferred, and more preferably, a compound such as quinonediazide sulfonate is used. The carboxyl group produces an acidic compound. The method for preparing the quinonediazide sulfonate compound is not particularly limited. The 1,2-naphthoquinonediazide is made in a solvent such as acetone, dioxane, tetrahydrofuran and the like in the presence of a base such as triethylamine. Quinonediazidesulfonic acid halide with 2,3,4-trihydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2-bis (4-hydroxyphenyl) propane, ginseng (4-hydroxyphenyl) methane, 1,1,1-ginseng (4-hydroxy-3-methylphenyl) ethane, 1,1,2,2-methyl (4-Hydroxyphenyl) ethane, 1,1,3-ginseng (2,5-dimethyl-4-hydroxyphenyl) -3-phenylpropane, phenolic resin, phenols and dicyclopentane An oligomer obtained by copolymerizing diene (Patent No. 3 09 09 9 1) and other phenol compounds having one or more phenolic hydroxyl groups are reacted. The esterification rate of the quinonediazidesulfonic acid ester compound is defined by the ratio of the hydrogen atom of the phenolic hydroxyl group of the phenol compound to the quinonediazidesulfonic acid residue. The esterification rate is usually 20 to 100 mol%, preferably 40 to 100 mol%, more preferably 50 to 100 mol%, and most preferably 60 to 100 mol%. If the esterification rate is too low, the dissolution inhibiting effect of the unexposed portion (unirradiated portion) is low, and the resolution and the residual film rate tend to decrease. Further, as the acid generator, carboxylic acids of diaryliodophosphonium salt, triarylphosphonium salt, phenyldiazo iron salt, sulfonyliminosulfonate derivative, tosylsulfonium compound, and benzyl derivative can be used. Ester compounds, halides of trioxane derivatives, etc.-21- 200302399 Organic halogen compounds, α, α, -bis (sulfofluorenyl) -diazomethane compounds, α-carbonyl-α-αsulfonamidyldiazo Methane compounds, maple compounds, organic phosphorus ester compounds, organic acid amine compounds, organic amine imine compounds and other strong acid-generating compounds can also form negative patterns. The amount of the acid generator is usually 0.5 to 100 parts by weight, preferably 1 to 50 parts by weight, and more preferably 10 to 30 parts by weight for 100 parts by weight of the alicyclic olefin resin having an acidic group. . If the amount of the acid generator is too small, the residual film rate or resolution deteriorates, while if it is too much, the heat resistance or light transmittance will decrease. The cross-linking agent of the component (C) used in the present invention has a function of reacting with an alicyclic olefin resin and forming a cross-linking structure between the alicyclic olefin resin, and specifically, one having two or more reactive groups Compound. Examples of the reactive group include an amino group, a carboxyl group, a hydroxyl group, an epoxy group, an isocyanate group, and a vinyl group. Specific examples of the cross-linking agent include aliphatic polyamines such as hexamethylenediamine; aromatic polyamines such as 4,4, -diaminodiphenyl ether and diaminodiphenyl maple; 2,6-bis ( 4'-azidobenzylidene) cyclohexanone, 4,4'-diazide diphenyl maple, and other azide compounds; Nylon, polyhexamethylene diamine terephthalate, polyhexamethylene Polyamines such as ammonium isophthalate; N, N, N ', N ,, N ,,, N ,,-(hexaalkoxymethyl) melamines, etc .; N, N' , N ", N- (tetraalkoxymethyl) acetylene urea and other acetylene ureas; ethylene glycol di (meth) acrylate, epoxy acrylate resins and other acrylate compounds; hexamethylidene Isocyanate-based polyisocyanates, isophorone diisocyanate-based polyisocyanates, xylyl diisocyanate-based polyisocyanates, and other isocyanate-based compounds; hydrogenated diphenylmethyl-k-isocyanate-based polyisocyanates; 1,4-di- ( Methylmethyl) cyclohexanone, 1,4-di- (hydroxymethyl) orbornorane; 1,3,4-trihydroxycyclohexanone; lipid-containing 22-22 200302399 epoxy of cyclic structure Compounds, resins, etc. These can be used as one or two or more mixtures. Among these crosslinking agents, N-alkoxymethylated melamine or N-alkoxymethyl is used in terms of heat resistance. The acetylated acetylene urea is preferred. These compounds include PL_ 丨 170, PL-1174, UFR65, CYMEL3 00, CYMEL303 (the above are made by Mitsui Seidick), BX-4000, Nikarak ) MW-30, MX290 (above manufactured by Sanwa Chemical Co., Ltd.) and other commercially available products are easy to obtain. In addition, in terms of better adhesion to substrates of resin films formed from radiation-sensitive resin compositions, An isocyanate-based compound is preferably used. The amount of the crosslinking agent is usually 1 to 100 parts by weight, preferably 5 to 80 parts by weight, and more preferably 10 to 70 parts by weight based on 100 parts by weight of the alicyclic olefin resin. It is preferably 20 to 50 parts by weight. If the amount of the cross-linking agent used is excessive, heat resistance, electrical characteristics, and water absorption are likely to be insufficient. The solvent of the component (D) used in the present invention may be used. If the above components are dissolved or dispersed, the solvent is, for example, methanol, ethanol, propanol, butanol , 3 -methoxy-3 -methyl butanol and other alcohols; cyclic ethers such as tetrahydrofuran, dioxane, etc .; methyl cellosolve acetate, ethyl cellosolve acetate, etc. Fiber esters; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol mono 3 -butyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, Alcohol ethers such as ethylene glycol monomethyl ether, diethylene glycol monoethyl ether, dipropylene glycol monomethyl ether; propylene glycol alkyl ether acetates such as propylene glycol propyl ether acetate; aromatics such as benzene, toluene, and xylene Ketones such as hydrocarbons, methyl ethyl ketone, cyclohexanone, 2-heptanone, 4-hydroxy-4-methyl-2-heptanone, etc .; ethyl 2-hydroxypropionate, 2-hydroxy-2- Ethyl methylpropionate, ethyl 2-hydroxy-2-methylpropionate-23- 200302399, ethyl ethoxyacetate, ethyl glycolate, 2-hydroxy-3 -methylbutyrate, 3 -Methyl methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, 3 -Methyl ethoxypropionate, ethyl acetate, butyl acetate, ethyl lactate, etc. Esters; N - methyl acyl amine, N, N - dimethylacetamide, dimethyl sulfoxide, [gamma] -butyrolactone, etc. aprotic polar solvent; and the like. These solvents are used in an amount sufficient to dissolve or disperse each component uniformly. The radiation-sensitive resin composition of the present invention may contain polyethylene oxide lauryl ether, polycycloethane dilaurate, etc. for the purpose of preventing streaks (after coating lines) and improving the developability. Non-ionic surfactants; Yefton cloth (transliteration) by Shin Akita Chemicals, Mekafak (transliteration) by Dainippon Ink Chemical Industry Co., Ltd., and Fronla by Sumitomo Seriyemu (transliteration) (Transliteration), fluorine-based surfactants such as Asahi Carton (transliteration) manufactured by Asahi Glass Company; silane-based surfactants such as organic silicone polymer KP series produced by Shin-Etsu Chemical Co .; Kyoeisha oil A variety of surfactants such as acrylic copolymer copolymer surfactants, such as polyfuron (transliteration), manufactured by Chemical Industry Corporation. The surfactant is usually 2 parts by weight or less, preferably 1 part by weight or less, based on 100 parts by weight of the solid content (components other than the solvent) of the radiation-sensitive resin composition, and is used as needed. In the radiation-sensitive resin composition of the present invention, for the purpose of improving adhesion to a substrate, a functional silane coupling agent such as γ-glycidoxypropyltrimethoxysilane may be added as an adhesion assistant. The amount of the bonding aid is usually 20 parts by weight or less, preferably 0.05 to 10 parts by weight, and more preferably 1 to 10 parts by weight for 100 parts by weight of the alicyclic olefin resin having an acidic group. -200302399 In addition, the radiation-sensitive resin composition of the present invention may contain a sensitizer, an antistatic agent, a storage stabilizer, an antifoaming agent, a pigment, a dye, and the like, as necessary. 2. The above components are mixed in a conventional manner, and dissolved or dispersed in a solvent to adjust the radiation-sensitive resin composition. The solid content concentration of the prepared radiation-sensitive resin composition of the present invention is not particularly limited, but it is usually 5 to 40% by weight. · The prepared radiation-sensitive resin composition is preferably a homogeneous solution. In this case, a filter of 0 · 2 to 1 μm is used to remove the foreign matter, and then it is preferably used. The radiation-sensitive resin composition of the present invention is suitable as a protective film for a device display device, an integrated circuit device, or the like, or a color filter for a liquid crystal display, a flattening film for flattening the surface of an element, or wiring, Materials for various types of resin films for electronic parts including electrically insulating insulating films (such as interlayer insulating films and soldering photoresist films for thin insulating liquid crystal display elements or integrated circuit elements). Φ The radiation-sensitive resin composition of the present invention is coated on a substrate to form a resin film ', and activated radiation is irradiated in a pattern on the resin film to form a latent image pattern on the resin film. By bringing a resin film having a latent image pattern into contact with a developing solution, the pattern can be developed. The method of forming a resin film on a substrate may be a method of coating the surface of the substrate with the radiation-sensitive resin composition of the present invention and drying it, and directly forming a resin film on the substrate, or a method of forming at least one side of A film made of a resin such as a diester film, a polypropylene film, a polyethylene film, or the like is coated on a body with a radiation-sensitive resin composition of the present invention and dried. After the resin film is formed on the carrier, A method in which a resin film of a carrier is superposed on a substrate. When the carrier-attached resin film is superposed on the substrate, it is preferable to heat and press the resin film using a pressure laminator, a pressure press, a vacuum laminator, a vacuum press, a roll laminator, or the like. The temperature during heating and pressure melting is usually 30 ~ 250 ° C, preferably 70 ~ 20 (TC, the pressure melting force is usually 10kPa ~ 20MPa, preferably 100kPa ~ 10MPa, and the pressure melting time is usually 30 seconds ~ 5 hours, preferably 1 minute to 3 hours, the atmospheric pressure is usually adjusted to 100 kPa to IPa, and preferably 40 kPa to 10 Pa when heating and pressing. The surface of the substrate or the carrier is coated with the radiation of the present invention. The method of the resin composition may be, for example, various methods such as a spray method, a roll coating method, and a spin coating method. Then, the obtained coating film is dried by heating to obtain a resin film having no fluidity. Directly on the substrate surface The heating conditions when forming the resin film vary depending on the type of each component, the mixing ratio, etc., and it is usually heated at 60 to 120 ° C for 10 to 600 seconds. The radiation-sensitive resin composition is coated on the surface of the substrate and dried. In the method of directly forming a resin film on a substrate, the heating for drying is generally referred to as pre-bake. The obtained resin film is irradiated with active radiation and a latent image pattern is formed on the resin film. Active radiation Of There are no special restrictions, such as ultraviolet, far ultraviolet, X-rays, electron rays, proton beams, etc. Among them, visible rays and ultraviolet rays are preferred. The amount of radiation can be arbitrarily set depending on the type or thickness of the resin film. The formation of the pattern can be A method of irradiating active radiation through a photomask 'a method capable of directly drawing by an electron beam, etc.-2 6-200302399 After radiation exposure, a resin film having a latent image pattern on a substrate is brought into contact with a developing solution' The irradiated part is removed and the latent image pattern is developed (developed). It can be heated before development (PEB treatment: post exposure bake). PEB treatment It can reduce development residues such as unnecessary resin components that must be removed when dissolved in the development solution. Cycloaliphatic olefin resins have alkali-soluble polar groups, especially when they have acidic groups, and it is easier to flow out through the development solution, so The developing solution is generally an aqueous solution in which alkali compounds are dissolved in water. The alkali compounds such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium methylsilicate, ammonium water, etc. Inorganic bases; primary amines such as ethylamine and n-propylamine; secondary amines such as diethylamine and di-n-propylamine; tertiary amines such as triethylamine, methyldiethylamine, and N-methylpyrrolidone ; Alcohol amines such as dimethylethanolamine, triethanolamine; Tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, choline and other quaternary ammonium salts; pyrrole, piperidine, 1 Alicyclic amines such as 8-diazobicyclo [5 · 4 · 0] undec-7-ene, 1,5-diazobicyclo [4 · 3 · 0] non-5-ene; Etc. These alkali compounds can be used alone or in combination of two or more. A water-soluble organic solvent such as methanol, ethanol, or a surfactant can also be added to the developing solution in an appropriate amount. The imaging solution is dissolved at a rate of 1 μm / min or more at the irradiated portion of the resin film formed using the radiation-sensitive resin composition, and the undissolved portion of the resin film is dissolved at a rate of 0.5 μm / min or less. It is particularly good to obtain particularly excellent resolution and residual film ratio. From this point of view, when the radiation-sensitive resin composition of the present invention is used, the concentration of the developer used is 〇1〜1 · 〇 % by weight, preferably -27- 200302399 is 0 · 1 ~ 0 · 8% by weight. Tetramethylammonium hydroxide aqueous solution is suitable. The development time is usually 30 to 180 seconds. The method for contacting the developing solution with the resin film having a latent image pattern is not particularly limited, and for example, a stirring method, a spray method, or a dipping method can be used. The developing temperature is not particularly limited, but is usually 15 to 35 ° C, preferably 20 to 30 ° C. In this way, a resin film having a desired pattern is formed on the substrate. After a pattern is formed on the resin film by development, if it is necessary to remove unnecessary development residues remaining on the inner surface of the substrate and the end of the substrate, the substrate and the rinse solution can be contacted by a conventional method. The substrate in contact with the rinse liquid is usually dried by compressed air or compressed nitrogen to remove the rinse liquid from the substrate. If necessary, the entire surface of the patterned resin film may be irradiated with active radiation. After the pattern is formed on the resin film of the substrate ', the resin film can be hardened by heating if necessary. The heating method is performed by a heating device such as a hot plate and an oven. The heating temperature is usually 150 to 25 (TC, preferably 180 to 220 ° C). The heating time is usually 5 to 60 minutes when using a hot plate, and 30 to 90 minutes when using an oven. Post-baking is performed at a low temperature. It is preferable to carry out in an oxygen atmosphere, specifically, an oxygen concentration of 10 ppm or less. As described above, using the radiation-sensitive resin composition of the present invention, a resin film is formed on a substrate, and the resin film is irradiated in a pattern. Active radiation 'forms a latent image pattern on a resin film, and then forms a pattern on the resin film by a pattern forming method in which the resin film is brought into contact with a developing solution to develop the pattern. The resin film formed with the pattern is suitable for use as Protective film, flattening film, interlayer insulating film, etc. Resin film for electronic parts, etc. -28- 200302399 (4) Embodiments [Examples] The present invention will be described in more detail by means of synthesis examples and examples in the following. The parts and% in each example are based on weight (mass basis) when there is no particular limitation. [Synthesis Example 1] 70 parts of 8-hydroxycarbonyltetracyclo [4.4.0.12, 5.17, 1G] -dodeca-3 · ene , 30 copies of the four rings [4 · 4 · 0 I2'5 · 17'1G] -Dodecyl-3-ene '10 parts 1-hexene, 0.04 parts 1,3-di-Lylimidazolium-2-iridium) (tricyclohexylphosphine) benzyl methylene Ruthenium dichloride and 400 parts of tetrahydrofuran were placed in a glass pressure-resistant reaction vessel substituted with nitrogen, and heated to 70 ° C and stirred for 2 hours to prepare a reaction solution. It was confirmed by gas chromatography that no monomer remained in the reaction solution. The obtained reaction solution was poured into a large amount of n-hexane to precipitate a solid content. The obtained solid component was washed with n-hexane, and then dried under reduced pressure at 100 ° C. for 18 hours to obtain a ring-opening metathesis copolymer as a white solid. Add 1000 parts of the ring-opening metathesis copolymer, 400 parts of tetrahydrofuran, and 5 parts of platinum / carbon (10% platinum) as hydrogenation catalysts to a pressure cooker with a stirrer. Hydrogenated at 60 ° C for 8 hours. After the reaction solution was filtered, it was solidified and dried in a large amount of n-hexane in the same manner as described above to obtain an alicyclic olefin resin (polymer a) having an acidic group having a hydrogenation rate of 100% (measured by W-NMR spectrum). [Synthesis Example 2] Except changing each to 78 parts of 8-hydroxycarbonyltetracycline [4 · 4 · 0 · 12'5 · Γ'1 ()]-dodec-3-ene and 22 parts of tetracyclo [4.4 .0.12'5.17'1 ()]-dodecane-3-ene and 8 parts of 1-hexene were prepared in the same manner as in Synthesis Example 1 to obtain an alicyclic olefin resin having a hydrogenation rate of 100% and an acidic 200302399 group. (Polymer b) ° [Synthesis Example 3] Except changing each to 71 parts of 8-hydroxycarbonyl tetracyclo [4 · 4 · 0 · 12,5 · 17'1 ()]-dodec-3-ene, 29 Parts of tetracycline [4.4 · 0.12'5 · Γ'1 ()]-dodecane-3-storage, 20 parts of 1-hexene, the same hydrogenation rate as 100% was obtained in the same manner as in Synthesis Example 1, and acidity was obtained. Cycloaliphatic olefin resin (Polymer c) ° [Synthesis Example 4] Except changing each to 76 parts of 8-hydroxycarbonyltetracycline [4.4.0.12, 5.17, 1 ()]-dodec-3-ene, 24 parts of tetracycline [4 · 4 · 0 · 12,5.Γ, 1 ()]-dodec-3-ene and 8 parts of 1-hexene were prepared in the same manner as in Synthesis Example 1 to obtain a hydrogenation rate of 10. 0% alicyclic olefin resin (polymer d) with acid decadecyl. [Synthesis Example 5] In the method disclosed in Synthesis Example 5 of Japanese Patent Application Laid-Open No. 1 1-52574, the temperature of the catalyst was changed from 60 ° C to 80 ° C, and the polymerization holding temperature was changed from 80 ° C to At 110 ° C, using the method described in Synthesis Example 5 of this publication as a reference, an alicyclic olefin resin (polymer e) having an acidic group having a hydrogenation rate of 100% and a hydrolyzation rate of 75% can be obtained. Specifically, for example, polymer e is synthesized by the following method. 250 parts of 8-methyl-8-methoxycarbonyltetracyclo [4.4.0.I2,5 "7,10] -3-dodecene, 180 parts of 1-hexene, and 750 parts of toluene were added In a reaction vessel substituted with nitrogen, heat to 80 ° C. To this was added 0.62 parts of a toluene solution of trimethylamine (1.5 mol / 1), and 3.7 parts of a 3-C4H5OH / CH3OH modified (3-C4H5OH / CH30 / W = 0.35 / 0.3 / l; Molar ratio) of WCU solution (concentration 0. 05 Molar / 1), heated and stirred at 110 ° C for 3 hours to prepare a soil solution of 200302399. The polymerization conversion rate of this polymerization reaction was 90%. 4,000 parts of the obtained polymer solution was placed in an autoclave, and 30.48 parts of RuHC1 (CO) [P (C6H5) 3] was added thereto under a hydrogen pressure of lO. 〇kg / cm2, reaction temperature of 16 5 ° C under heating and stirring for 3 hours. After the obtained reaction solution was cooled, the hydrogen was depressurized to prepare a hydrogenated polymer solution. The thus-obtained hydrogenated polymer was poured into a large amount of methanol to solidify the polymer. The hydrogenation rate of the obtained hydrogenated polymer was substantially 100%. 100 parts of the obtained hydrogenated polymer, 100 parts of N-methyl-2-pyrrolidone, 500 parts of propylene glycol, and 84.5 parts of potassium hydroxide (concentration 85%) were added to the reactor, and stirred at 190 ° C for 1.5 hours. The obtained reaction solution was poured into a large amount of a mixed solution of water, tetrahydrofuran and hydrochloric acid to coagulate the hydrolysate. The coagulated polymer was washed with water and dried to obtain polymer e as a hydrolyzed polymer. The hydrolyzation rate of the obtained hydrolyzable polymer was 75%. [Synthesis Example 6] An alicyclic olefin resin having an acidic group having a hydrogenation rate of 100% and a hydrolyzation rate of 75% was prepared in the same manner as in Synthesis Example 5 except that the polymerization holding temperature was changed from 110 ° C to 100 ° C. Polymer f). [Synthesis Example 7] A cycloaliphatic olefin resin having an acidic group having a hydrogenation rate of 100% and a hydrolytic decomposition rate of 75% was prepared in the same manner as in Synthesis Example 5 except that the polymerization holding temperature was changed from 110 ° C to 9 ° C ( Polymer g) [Comparative Synthesis Example 1] Based on the method disclosed in Synthesis Example 5 of JP-A No. 1 1-52 5 74, 8-methyl-8-methoxycarbonyl tetracyclic [4.4.0.12 , 5.17,1 ()]-3-twelve-31- 200302399 Ring-opening polymerization of ene was used to prepare a ring-opening polymer having a weight average molecular weight of 17,000. Then, after hydrogenating the obtained ring-opening polymer, Hydrolysis was performed for 1.5 hours to obtain an alicyclic olefin resin (polymer h) having a hydrogenation rate of 100%, a hydrolyzation rate of 75%, and an acid group. [Comparative Synthesis Example 2] Except for 90 parts each 8-hydroxycarbonyl tetracyclo [4.4.0. I2,5. 17,1G] dodec-3-ene, 10 parts of tetracyclo [4 · 4 · 0 · 12,5 · 17,1 ()] 12 Except for carbon-3-ene and 9 parts of 1-hexene, alicyclic olefin resin (Polymer I) having a hydrogenation rate of 1000%, a hydrolytic decomposition rate of 75%, and an acid group was prepared in the same manner as in Synthesis Example 1. The physical properties of the polymers a to I obtained in the above synthesis examples are shown in Table 1.

- 3 2 - 200302399 表1 聚合 物塗 覆 共聚合比例(mo 1 %) 酸性基 比例 (mol%) 重量平均分 子量 (Mw) 分子量分布 (Mw/Mn) 指數Cl 指數C2 合成例1 a TCDC(70) TCD(30) 70 0.53x 104 1.81 677 一 合成例2 b TCDC(78) TCD(22) 78 0.78χ 104 1.51 616 — 合成例3 c TCDC(71) TCD(29) 71 0·37χ ΙΟ4 1.71 582 一 合成例4 d TCDC(76) TCD(24) 76 0.81χ ΙΟ4 1.72 566 — 合成例5 e TCDE (100) — 75 1·65χ ΙΟ4 2.45 — 262 合成例6 f TCDE (100) — 75 1.6χ ΙΟ4 2.92 —— 153 合成例7 g TCDE (100) — 75 1·8χ ΙΟ4 3.15 — 129 比較合成 例1 h TCDE (100) — 75 1.7χ ΙΟ4 3.5 - 91 比較合成 例2 i TCDC(76) TCD(24) 90 0.68χ ΙΟ4 1.61 214 —-3 2-200302399 Table 1 Polymer coating copolymerization ratio (mo 1%) Acid group ratio (mol%) Weight average molecular weight (Mw) Molecular weight distribution (Mw / Mn) Index Cl Index C2 Synthesis Example 1 a TCDC (70 ) TCD (30) 70 0.53x 104 1.81 677-Synthesis Example 2 b TCDC (78) TCD (22) 78 0.78χ 104 1.51 616 — Synthesis Example 3 c TCDC (71) TCD (29) 71 0 · 37χ IO04 1.71 582 A Synthesis Example 4 d TCDC (76) TCD (24) 76 0.81χ IO04 1.72 566 — Synthesis Example 5 e TCDE (100) — 75 1.65χ IO4 2.45 — 262 Synthesis Example 6 f TCDE (100) — 75 1.6χ ΙΟ4 2.92 —— 153 Synthesis Example 7 g TCDE (100) — 75 1 · 8χ IO4 3.15 — 129 Comparative Synthesis Example 1 h TCDE (100) — 75 1.7χ IO4 3.5-91 Comparative Synthesis Example 2 i TCDC (76) TCD (24 ) 90 0.68χ ΙΟ4 1.61 214 —

表1中,共聚合比例一欄之記號係如下述。 TCDC : 8-羥基羰基四環[4.4.0.12,5.17,1G]十二碳-3-烯由 來之重複單位 春 TCD :四環[4.4.0· I2’5. Γ’1()]十二碳-3-烯由來之重複單 位 TCDE ·· 8 -甲基-8-甲氧基羰基四環[4·4.0.12,5.Γ’1()] -十 二碳-3-烯由來之重複單位 [實施例1 ] 對100份合成例1所得的聚合物a而言,使550份環己 酮、20重量份作爲1,2 -醌二疊氮化合物之ι,ι,3 -參(2,5-二甲基-4-羥基苯基)-3-苯基丙烷(1莫耳)與丨,2-萘醌二疊 -33- 200302399 氮-5 -磺酸氯化物(1 . 9莫耳)之縮合物、2 5份作爲交聯劑之 CYMEL 3 0 0、5份作爲黏合助劑之r-環氧丙基丙基三甲氧基 矽烷、0.05份作爲界面活性劑之梅卡法克(譯音)F 172 [大 曰本油墨化學工業(股)製]混合、溶解後’以孔徑〇 · 4 5 μπι 之聚四氟乙烯製過濾器以調製感放射線性感光性樹脂組成 物溶液。 使該溶液各旋轉塗覆於矽基板上、玻璃基板上、及具有 1 μπι段差之矽氧化膜基板(以下稱爲「有段差基板」)上,在 9 0 °C下、熱板上預烘烤2分鐘,形成膜厚3. Ομηι之塗膜。 在所得附有塗膜之矽基板上放置具有所定圖樣之光罩,使 波長3 6 5nm、光強度5mW/cm2之紫外線在空氣中照射40秒 。其次,使用0 . 3%四甲銨水溶液,在25 °C下進行顯像處理 60秒。其次,以超純水進行洗淨處理1分鐘,形成正型具 有圖樣之薄膜。 然後,全面以3 6 5nm之光強度爲5mW/cm2之紫外線照射60 秒。形成有該圖樣之矽基板、玻璃基板、及具有1 μπι段差 之矽氧化膜基板各在熱板上、200 °C下加熱30分鐘,進行 圖樣及塗膜之後烘烤,製得形成圖樣狀薄膜之矽基板、玻 璃基板及有段差基板。 [實施例2〜7 ] 除使用聚合物b (實施例2 )、聚合物c (實施例3 )、聚合 物d (實施例4 )、聚合物e (實施例5 )、聚合物f (實施例)6 、聚合物g (實施例7 )取代聚合物a外,與實施例1相同地 製得形成有圖樣狀薄膜之矽基板、玻璃基板、及有段差基 - 34 — 200302399 板。 [比較例1及2 ] 除使用聚合物h (比較例1 )及聚合物丨(比較例2 )取代聚 合物a外,與實施例1相同地製得形成有圖樣狀薄膜之矽 : 基板、玻璃基板、及有段差基板。 : [評估] 上述所得各矽基板以2 2 0 °C烤箱中加熱6 0分鐘後之膜厚 ,於加熱鉗之膜厚爲95%以上,可確認耐熱尺寸安定性優 · 異。 上述所得各玻璃基板使用日本分光公司製紫外線可視近 紅外線分光光度計(V- 5 70 )、以400〜80 Onm波長之最低光 線透過率(t )爲9 0%、皆佳,可確認透明性優異。 此等之評估外,藉由下述方法評估各實施例使用的脂環 族烯烴樹脂(聚合物a〜i )之介質率與吸水率、以及使用上 述所得玻璃基板測定的耐溶劑性、解析度、殘膜率、及圖 樣形狀。結果如表2所示。 · (1 )比介電率: 以JIS C648 1爲基準,測定1MHz(室溫)之比介電率 ,以下述基準評估。 A : ε < 2.60 Β : 2.60^ε< 2.70 C : 2 . 70 ^ε< 2.80 D : 8^2.80 - 35- 200302399 (2 )吸水率: 以丨I S C648 1爲基準測定吸水率(w ) ’以下述基準評 估。 A : w < 0 . 0 5 % . B* 0.05%^w<〇.〇7% k C · 0.07%^w< 0.1% D * 0 . 1 % ^ wIn Table 1, the symbols in the column of copolymerization ratio are as follows. TCDC: 8-hydroxycarbonyl tetracyclic [4.4.0.12, 5.17, 1G] Dodecane-3-ene is derived from the repeat unit spring TCD: tetracyclic [4.4.0 · I2'5. Γ'1 ()] twelve Derivative unit derived from carbon-3-ene TCDE ·· 8-methyl-8-methoxycarbonyl tetracyclic [4 · 4.0.12,5.Γ'1 ()]-derived from dodecyl-3-ene Repeating unit [Example 1] For 100 parts of the polymer a obtained in Synthesis Example 1, 550 parts of cyclohexanone and 20 parts by weight were used as 1,2, quinonediazide compounds. 2,5-Dimethyl-4-hydroxyphenyl) -3-phenylpropane (1 mole) and 丨, 2-naphthoquinone diazide-33- 200302399 nitrogen-5 -sulfonic acid chloride (1.9 Mol) condensate, 25 parts of CYMEL 3 0 as a cross-linking agent, 5 parts of r-glycidylpropyltrimethoxysilane as an adhesion aid, and 0.05 part of the meka method as a surfactant Grams (transliteration) F 172 [manufactured by Daiichi Ink Chemical Industry Co., Ltd.] after mixing and dissolving, a polytetrafluoroethylene filter with a pore size of 0.45 μm was used to prepare a radiation-sensitive photosensitive resin composition solution. The solution was spin-coated on a silicon substrate, a glass substrate, and a silicon oxide film substrate (hereinafter referred to as a "stepped substrate") having a step difference of 1 μm, and prebaked at 90 ° C on a hot plate. 〇μηι 的 涂膜。 Bake for 2 minutes to form a film thickness of 3. Ομηι. A mask having a predetermined pattern was placed on the obtained silicon substrate with a coating film, and ultraviolet rays with a wavelength of 3 65 nm and a light intensity of 5 mW / cm2 were irradiated in the air for 40 seconds. Secondly, a 0.3% aqueous solution of tetramethylammonium was used for development for 60 seconds at 25 ° C. Next, it was washed with ultrapure water for 1 minute to form a positive-shaped film having a pattern. Then, the entire surface was irradiated with ultraviolet light having a light intensity of 3 6 5 nm at 5 mW / cm 2 for 60 seconds. The silicon substrate, the glass substrate, and the silicon oxide film substrate having a 1 μm step difference were each heated on a hot plate at 200 ° C for 30 minutes, and then baked and patterned to obtain a patterned film. Silicon substrate, glass substrate and stepped substrate. [Examples 2 to 7] Except using polymer b (Example 2), polymer c (Example 3), polymer d (Example 4), polymer e (Example 5), polymer f (implementation Example) 6. Polymer g (Example 7) Substituting polymer a, a silicon substrate, a glass substrate, and a stepped base-34 — 200302399 plate with a patterned film formed thereon were prepared in the same manner as in Example 1. [Comparative Examples 1 and 2] Except that polymer h (Comparative Example 1) and polymer 丨 (Comparative Example 2) were used in place of Polymer a, silicon having a patterned thin film was prepared in the same manner as in Example 1: a substrate, Glass substrate and stepped substrate. : [Evaluation] The film thickness of each silicon substrate obtained above was heated in an oven at 220 ° C for 60 minutes, and the film thickness in the heating clamp was 95% or more. It can be confirmed that the heat resistance dimension stability is excellent. Each of the glass substrates obtained above was a UV-visible near-infrared spectrophotometer (V-5 70) manufactured by JASCO Corporation. The minimum light transmittance (t) at a wavelength of 400 to 80 Onm was 90%. All were good, and transparency was confirmed. Excellent. In addition to these evaluations, the dielectric ratio and water absorption of the alicyclic olefin resin (polymers a to i) used in each example were evaluated by the following methods, and the solvent resistance and resolution measured using the glass substrate obtained above were evaluated. , Residual film rate, and pattern shape. The results are shown in Table 2. · (1) Specific permittivity: The specific permittivity at 1 MHz (room temperature) was measured based on JIS C648 1 and evaluated based on the following criteria. A: ε < 2.60 Β: 2.60 ^ ε < 2.70 C: 2. 70 ^ ε < 2.80 D: 8 ^ 2.80-35- 200302399 (2) Water absorption rate: Measure the water absorption rate (w) based on IS C648 1 'Evaluated on the basis of the following. A: w < 0.05%. B * 0.05% ^ w < 〇.〇7% k C · 0.07% ^ w < 0.1% D * 0.1% ^ w

(3) 耐溶劑性: I 使形成圖樣狀薄膜之玻璃基板在7〇°C之二甲基亞碾 中浸漬30分鐘,測定膜厚變化率(S )’以下述基準評 估。(3) Solvent resistance: I The glass substrate on which the patterned film was formed was immersed in a dimethylimine at 70 ° C for 30 minutes, and the film thickness change rate (S) 'was measured and evaluated on the basis of the following criteria.

A : 10%> SA: 10% > S

B : 10%^S C :膨脹變大且自基板剝離,無法測定膜厚變化率的 狀態 (4) 解析度: _ 以掃描形電子顯微鏡觀察玻璃基板上所形成的圖樣 狀薄膜,可得線與間隙以1 ·· 1之線寬形成的最小圖樣 尺寸(W),以下述基準評估。 A · W ^ 5μιη Β·· 5μιη< Ψ^ΙΟμπι D ·· W > 1 5μηι (5)殘膜率: - 3 6 - 200302399 藉由0.3wt%四甲銨氫氧化物水溶液(25°C)進行顯像 1分鐘,顯像前後未曝光部分之膜厚使用接觸式膜厚 測定器測定。以顯像後之(膜厚/顯像前膜厚)X 1 00作 爲殘膜率(R ),以下述基準評估。 二 A : R ^ 9 5 % ; B ·· 9 3 % ^ R < 9 5 % C: 9 0 % ^ R < 9 3 % D : 85%^R< 90% · E : R < 8 5 % < 6)圖樣形狀: 以掃描形電子顯微鏡觀察圖樣化後之線•與•間隙 截面,以下述基準評估。 A :沒有感放射線性樹脂組成物由來之殘渣、沒有形 狀崩裂之矩形 B :僅稍微引出樹脂圖樣與基板之界面 C :間隙部分存在有顯像殘渣 春 - 37- 200302399B: 10% ^ SC: Swelling becomes large and peels from the substrate, and the thickness change rate cannot be measured (4) Resolution: _ Observing the patterned film formed on the glass substrate with a scanning electron microscope, the line and The minimum pattern size (W) formed by the gap with a line width of 1 ·· 1 is evaluated on the basis of the following. A · W ^ 5μιη Β ·· 5μιη < Ψ ^ ΙΟμπι D ·· W > 1 5μηι (5) Residual film rate:-3 6-200302399 With 0.3wt% tetramethylammonium hydroxide aqueous solution (25 ° C) Development was performed for 1 minute, and the film thickness of the unexposed portion before and after the development was measured using a contact-type film thickness measuring device. After the development (film thickness / film thickness before development) X 1 00 was used as the residual film rate (R), the following criteria were evaluated. Two A: R ^ 95%; B · 93% ^ R < 95% C: 90% ^ R < 9 3% D: 85% ^ R < 90% · E: R < 8 5% < 6) Pattern shape: Observe the patterned line and gap cross sections with a scanning electron microscope, and evaluate them with the following criteria. A: No residue from the radiation-sensitive resin composition, no rectangular shape cracks B: Only the interface between the resin pattern and the substrate is drawn slightly C: There are imaging residues in the gap part Spring-37- 200302399

表2 聚合物 (重量份) 介電率 吸水性 耐溶劑性 解析度 殘膜率 圖樣形狀 實施例1 a(100) A A A A A A 實施例2 b(100) B A A A A A 實施例3 c(100) A A A B B A 實施例4 d(100) B A A B B A 實施例5 e(100) C C B B B B 實施例6 f(100) C C B B C B 實施例7 g(l〇〇) C C B B D B 比較例1 h(100) C C B D E B 比較例2 i(100) C C B D E C 由表2所示結果可知,本發明之感放射線性樹脂組成物( 實施例1〜7 )可維持比介電値、耐吸水性、耐熱尺寸安定 性、平坦性、及耐溶劑性之特性平衡,且可達成優異的解 析度、殘膜率、及圖樣形成。特別是使用重量平均分子量 小於10000、分子量分布爲2.0以下、指數C1爲600以上 之具酸性基的脂環族烯烴樹脂(聚合物a及b )時,可得優 異的解析度與殘膜率。 另外,使用具有8 -羥基羰基四環[4.4.〇.12,5.17,1g]十二 碳-3-烯由來之重複單位與四環[4.4.〇.l2,5.l7,1G]十二碳-3 -烯由來之重複單位的脂環族烯烴樹脂(聚合物a〜d )時( 實施例1〜4 )可得優異的耐吸水性。 此外,使用如特開平11-52574號公報或特開平10-307388 -38 - 200302399 號公報中記載的指數ci低的鹼可溶性脂環族烯烴樹脂時( 比較例1及2 ),可知比介電率、吸水性、耐溶劑性稍微不 佳、解析度、殘膜率及圖樣形狀不佳。 產業上之利用價値 藉由本發明可製得具有適合電絕緣膜形成時之性質、解 析度、殘膜率及圖樣形狀優異的感放射線性樹脂組成物。 使用本發明之感放射線樹脂組成物形成的樹脂膜、及形成 圖樣之樹脂膜可適合作爲例如半導體元件、發光二極管、 各種記錄類等之電子元件;混合IC、MCM、印刷配線基板 等之過剩塗覆材;多層電路基板之層間絕緣膜;液晶顯示 器之絕緣層等各種電子零件用樹脂膜。 (五)圖式簡單說明:無Table 2 Polymer (parts by weight) Dielectric rate Water absorption Solvent resistance resolution Residual film rate pattern Example 1 a (100) AAAAAA Example 2 b (100) BAAAAA Example 3 c (100) AAABBA Example 4 d (100) BAABBA Example 5 e (100) CCBBBB Example 6 f (100) CCBBCB Example 7 g (100) CCBBDB Comparative Example 1 h (100) CCBDEB Comparative Example 2 i (100) CCBDEC From Table 2 The results show that the radiation-sensitive resin composition (Examples 1 to 7) of the present invention can maintain a balance of specific dielectric properties, water absorption resistance, heat resistance dimensional stability, flatness, and solvent resistance, and can Achieve excellent resolution, residual film rate, and pattern formation. Particularly, when an alicyclic olefin resin (polymers a and b) having an acidic group having a weight average molecular weight of less than 10,000, a molecular weight distribution of 2.0 or less, and an index C1 of 600 or more, excellent resolution and residual film ratio can be obtained. In addition, a repeating unit derived from tetradecyl-3-ene with 8-hydroxycarbonyl tetracyclo [4.4.0.1, 5.17, 1 g] and tetracyclyl [4.4.0.0.12, 5.17, 1G] twelve In the case of the alicyclic olefin resin (polymers a to d) having repeating units derived from carbon-3 ene (Examples 1 to 4), excellent water absorption resistance can be obtained. In addition, when using an alkali-soluble alicyclic olefin resin having a low index ci as described in JP 11-52574 or JP 10-307388 -38-200302399 (Comparative Examples 1 and 2), it is known that the specific dielectric The rate, water absorption, and solvent resistance are slightly poor, and the resolution, residual film rate, and pattern shape are poor. Industrial utilization value: The present invention can produce a radiation-sensitive resin composition having excellent properties, resolution, residual film rate, and pattern shape suitable for the formation of an electrical insulating film. The resin film formed using the radiation-sensitive resin composition of the present invention and the pattern-formed resin film can be suitably used as electronic components such as semiconductor elements, light-emitting diodes, various recordings, etc .; excess coating of hybrid IC, MCM, printed wiring boards, etc. Covering materials; interlayer insulating films for multilayer circuit boards; resin films for various electronic parts, such as the insulating layer of liquid crystal displays. (V) Schematic description: None

- 39--39-

Claims (1)

200302399 拾、申請專利範圍 1 . 一種感放射線性樹脂組成物,其係於含有(A )具酸性基 之脂環族烯烴樹脂、(B )酸發生劑、(C )交聯劑、及(D ) 溶劑的感放射線性樹脂組成物中,其特徵爲(A )具酸性 > 基之脂環族烯烴系樹脂的重量平均分子量小於1〇〇00時 ' 具有以下述式(1 )所示指數C1爲300以上者’而重量平 均分子量爲10000以上時具有下述式(2)所示指數C2爲 1 2 0以上者, Φ (1) (MW)a5x(AC)7 · Cl= -—ΧΙΟ5 (ag)6x(mwd)2 (其中,,MW係爲重量平均分子量,AC係爲構造單位之 平均碳數,AG係爲全部構造單位中酸性基之莫耳數,MWD 係爲分子量分布),200302399 Patent application scope 1. A radiation-sensitive resin composition comprising (A) an alicyclic olefin resin having an acidic group, (B) an acid generator, (C) a cross-linking agent, and (D ) The solvent-containing radiation-sensitive resin composition is characterized in that (A) the alicyclic olefin-based resin having an acidic group has a weight average molecular weight of less than 10,000 'and has an index represented by the following formula (1) When C1 is 300 or more 'and the weight average molecular weight is 10,000 or more, the index C2 is 1 2 0 or more when the weight average molecular weight is 10,000 or more, Φ (1) (MW) a5x (AC) 7 · Cl =--XΙΟ5 (ag) 6x (mwd) 2 (where MW is the weight average molecular weight, AC is the average carbon number of the structural unit, AG is the mole number of acid groups in all structural units, and MWD is the molecular weight distribution), (MW)a5X(AC)2 / 、 2= - X103 (2) (AG)2X(MWD)3 (其中,各符號之意義與式(1)相同)。 2 .如申請專利範圍第1項之感放射線性.樹脂組成物,其中 (A )具有酸性基之脂環族烯烴樹脂的重量平均分子量爲 500〜20000 〇 3 .如申請專利範圍第1項之感放射線性樹脂組成物,其中 酸性基爲苯酚性羥基、羧基、二羧酸酐殘基、磺酸殘基 、或磷酸殘基。 -40 - 200302399 4 .如申請專利範圍第3項之感放射線性樹脂組成物,其中 酸性基爲羧基。 5 ·如申請專利範圍第1項之感放射線性樹脂組成物,其中 脂環族烯烴樹脂爲至少一種選自於 (i )脂環族烯烴單體之開環(共)聚合物及其加氫物、 (1 1 )脂環族烯烴單體之加成(共)聚合物、 (i i i )脂環族烯烴單體與乙烯化合物之加成共聚物、 (i v )單環環烯(共)聚合物、 (v )脂環族共軛二烯(共)聚合物、 (v i )乙烯系脂環族烴(共)聚合物及其加氫物、以及 (v i i )芳香族烯烴(共)聚合物之芳香環加氫物之樹脂。 6 ·如申請專利範圍第5項之感放射線性樹脂組成物,其中 脂環族烯烴樹脂爲脂環族烯烴單體之開環(共)聚合物的 加氫物。 7 .如申請專利範圍第6項之感放射線性樹脂組成物,其中 脂環族烯烴樹脂爲原冰片烯系單體之開環(共)聚合物的 加氫物。 8 .如申請專利範圍第7項之感放射線性樹脂組成物,其中 原冰片烯系單體爲四環十二烯類。 9 ·如申請專利範圍第1項之感放射線性樹脂組成物,其中 (A )具有酸性基之脂環族烯烴樹脂爲使脂環族烯烴樹脂 以含酸性基之化合物改性的樹脂。 1 0 .如申請專利範圍第1項之感放射線性樹脂組成物,其中 (Μ具有酸性基之脂環族烯烴樹脂爲含有酸性基之脂環 200302399 族烯烴單體、與不具酸性基之單體的加成(共)聚合物、 開環(共)聚合物、或此等之加氫物。 1 1 ·如申請專利範圍第丨項之感放射線性樹脂組成物,其中 (A )具有酸性基之脂環族烯烴樹脂爲不會使含有酯基之 脂環族烯烴單體、與視其所需不具酯基之單體的加成( 共)聚合物、開環(共)聚合物、或此等之加氫物加水分 解所成者。 1 2 ·如申請專利範圍第丨項之感放射線性樹脂組成物,其中 (A )具有酸性基之脂環族烯烴樹脂的分子量分布爲3.3 以下。 1 3 ·如申請專利範圍第1項之感放射線性樹脂組成物,其中 (A )具有酸性基之脂環族烯烴樹脂中具有酸性基之構造 單位比例爲2 0〜8 0莫耳%。 1 4 ·如申請專利範圍第1項之感放射線性樹脂組成物,其中 (Μ具有酸性基之脂環族烯烴樹脂係重量平均分子量小 於10000、分子量分布爲2.0以下、指數C1爲600以上 者。 1 5 .如申請專利範圍第1項之感放射線性樹脂組成物,其中 (Β )酸發生劑爲醌二疊氮磺酸酯。 1 6 .如申請專利範圍第1項之感放射線性樹脂組成物,其中 (C )交聯劑爲至少具有2個反應性基之化合物。 1 7 · —種圖樣形成方法,其特徵爲使用如申請專利範圍第1 〜1 6項中任一項之感放射線性樹脂組成物,在基板上形 成樹脂膜、且在該樹脂膜上圖樣狀照射活性放射線,在 一 4 2 - 200302399 該樹脂膜上形成潛像圖樣,然後藉由使樹脂膜@ , 顯{象^ 接觸以使圖樣顯像化。 1 8 .如申請專利範圍第1 7項之圖樣形成方法,其中顯像液 爲濃度0 . 0 1〜1 · 〇重量%之四甲銨氫氧化物水溶液。 1 9 . 一種樹脂膜,其特徵爲藉由如申請專利範圍第1 7項之 方法形成圖樣。 20 · —種形成如申請專利範圍第1 9項之圖樣的樹脂膜之電 子零件用樹脂膜之應用。(MW) a5X (AC) 2 /, 2 =-X103 (2) (AG) 2X (MWD) 3 (wherein the meaning of each symbol is the same as that of formula (1)). 2. The radiation-sensitive property as described in item 1 of the scope of patent application. A resin composition in which (A) the alicyclic olefin resin having an acidic group has a weight average molecular weight of 500 to 20000. 3 The radiation-sensitive resin composition in which the acidic group is a phenolic hydroxyl group, a carboxyl group, a dicarboxylic anhydride residue, a sulfonic acid residue, or a phosphoric acid residue. -40-200302399 4. The radiation-sensitive resin composition according to item 3 of the patent application, wherein the acidic group is a carboxyl group. 5. The radiation-sensitive resin composition as described in the first item of the patent application, wherein the alicyclic olefin resin is at least one ring-opening (co) polymer selected from (i) an alicyclic olefin monomer and its hydrogenation Compounds, (1 1) addition (co) polymers of alicyclic olefin monomers, (iii) addition copolymers of alicyclic olefin monomers and ethylene compounds, (iv) (cyclo) polymerization of monocyclic cycloolefins Compounds, (v) alicyclic conjugated diene (co) polymers, (vi) ethylene alicyclic hydrocarbon (co) polymers and their hydrogenated products, and (vii) aromatic olefin (co) polymers Aromatic ring hydrogenated resin. 6. The radiation-sensitive resin composition according to item 5 of the patent application, wherein the alicyclic olefin resin is a hydrogenated product of a ring-opening (co) polymer of an alicyclic olefin monomer. 7. The radiation-sensitive resin composition according to item 6 of the application, wherein the alicyclic olefin resin is a hydrogenated product of a ring-opening (co) polymer of an original norbornene-based monomer. 8. The radiation-sensitive resin composition according to item 7 in the scope of the patent application, wherein the pro-norbornene-based monomer is tetracyclododecene. 9. The radiation-sensitive resin composition according to item 1 of the scope of patent application, wherein (A) the alicyclic olefin resin having an acidic group is a resin in which the alicyclic olefin resin is modified with a compound containing an acidic group. 10. The radiation-sensitive resin composition according to item 1 of the scope of the patent application, wherein the alicyclic olefin resin having an acidic group is an alicyclic 200302399 olefin monomer containing an acidic group and a monomer having no acidic group Addition (co) polymer, ring-opening (co) polymer, or the like. 1 1 · The radiation-sensitive resin composition according to item 丨 of the patent application, wherein (A) has an acidic group The cycloaliphatic olefin resin is an addition (co) polymer, a ring-opening (co) polymer that does not allow an alicyclic olefin monomer containing an ester group, and a monomer that does not have an ester group as required, or These hydrogenated products are formed by hydrolyzing. 1 2 · The radiation-sensitive resin composition according to item 丨 of the patent application, wherein the molecular weight distribution of the alicyclic olefin resin having an acidic group (A) is 3.3 or less. 1 3 · The radiation-sensitive resin composition according to item 1 of the scope of the patent application, wherein (A) the proportion of the structural unit having an acidic group in the alicyclic olefin resin having an acidic group is 20 to 80 mole%. 1 4 · Radiation sensitivity as described in the first patent application Aliphatic composition, in which the alicyclic olefin resin having an acidic group has a weight-average molecular weight of less than 10,000, a molecular weight distribution of 2.0 or less, and an index C1 of 600 or more. 1 5. The radiation sensitivity as described in item 1 of the scope of patent application A resin composition in which the (B) acid generator is quinonediazide sulfonate. 16. The radiation-sensitive resin composition according to item 1 of the patent application scope, wherein (C) the crosslinking agent has at least two A compound having a reactive group. 1 7 · —A pattern forming method characterized in that a resin film is formed on a substrate by using a radiation-sensitive resin composition as described in any one of claims 1 to 16 in the scope of patent application, and The resin film is irradiated with active radiation in a pattern, and a latent image pattern is formed on the resin film. Then, the pattern is visualized by contacting the resin film @, {{^^). 1 8. If applied The pattern formation method of item 17 of the patent scope, wherein the developing solution is a tetramethylammonium hydroxide aqueous solution having a concentration of 0.01 to 1.0% by weight. 1 9. A resin film characterized by, for example, an application Patent Scope 17 Method to form a pattern. 20-Application of a resin film for electronic parts which forms a resin film such as the pattern in item 19 of the patent application. 200302399 陸、(一)、本案指定伐表圖爲:第圖 (二)、本代表圖之元件代表符號簡單說明:200302399 Lu, (1), the designated cutting chart in this case is: Figure (2), the representative symbols of the representative map are briefly explained: 柒、本案若有化學式時,請揭示最能顯示發明特徵的化 學式: -4-柒 If there is a chemical formula in this case, please disclose the chemical formula that can best show the characteristics of the invention: -4-
TW91137587A 2001-12-27 2002-12-27 Irradiation -sensitive resin composition, pattern forming process and process for manufacturing resin film TWI307823B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001397645 2001-12-27

Publications (2)

Publication Number Publication Date
TW200302399A true TW200302399A (en) 2003-08-01
TWI307823B TWI307823B (en) 2009-03-21

Family

ID=19189224

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91137587A TWI307823B (en) 2001-12-27 2002-12-27 Irradiation -sensitive resin composition, pattern forming process and process for manufacturing resin film

Country Status (4)

Country Link
JP (1) JP4179164B2 (en)
KR (1) KR100907820B1 (en)
TW (1) TWI307823B (en)
WO (1) WO2003056391A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI408496B (en) * 2006-03-01 2013-09-11 Zeon Corp A radiation linear resin composition, a laminate, and a method for producing the same
TWI427096B (en) * 2006-01-30 2014-02-21 Zeon Corp A laminated body, an active matrix substrate, and a planar display device having the substrate

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100475906C (en) * 2003-08-04 2009-04-08 日本瑞翁株式会社 Polymerizable composition and formed article using the same
CN1961261B (en) * 2004-03-31 2010-12-15 日本瑞翁株式会社 Radiation-sensitive composition, laminate, process for producing the sane and electronic part
JP4876597B2 (en) * 2005-03-30 2012-02-15 日本ゼオン株式会社 Method for preparing radiation-sensitive resin composition
JP2006307154A (en) * 2005-03-31 2006-11-09 Nippon Zeon Co Ltd Resin film comprising alicyclic olefin polymer
JP2009301056A (en) * 2009-09-17 2009-12-24 Sumitomo Bakelite Co Ltd Resin composition for semiconductor surface protective film and semiconductor device using the same
EP2545114B1 (en) * 2010-03-08 2013-08-21 Borealis AG Polyolefin composition for medium/high/extra high voltage cables comprising benzil-type voltage stabiliser
JP6035902B2 (en) * 2011-08-09 2016-11-30 Jsr株式会社 Microlens array and stereoscopic image display device
JP6248561B2 (en) * 2013-11-14 2017-12-20 日本ゼオン株式会社 Radiation sensitive resin composition and laminate
KR200485770Y1 (en) 2016-08-08 2018-02-20 권연호 Desk frame

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW288112B (en) * 1993-06-02 1996-10-11 Sumitomo Chemical Co
JPH10307388A (en) 1997-05-06 1998-11-17 Jsr Corp Radiation sensitive resin composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI427096B (en) * 2006-01-30 2014-02-21 Zeon Corp A laminated body, an active matrix substrate, and a planar display device having the substrate
TWI408496B (en) * 2006-03-01 2013-09-11 Zeon Corp A radiation linear resin composition, a laminate, and a method for producing the same

Also Published As

Publication number Publication date
WO2003056391A1 (en) 2003-07-10
KR100907820B1 (en) 2009-07-14
KR20040077694A (en) 2004-09-06
TWI307823B (en) 2009-03-21
JP4179164B2 (en) 2008-11-12
JPWO2003056391A1 (en) 2005-05-12

Similar Documents

Publication Publication Date Title
JP4380703B2 (en) Radiation-sensitive composition, laminate, method for producing the same, and electronic component
CN108604137B (en) Thin film touch sensor and manufacturing method thereof
TWI494345B (en) A polymer, a hydrogen additive, a resin composition, a resin film, and an electronic component
JP4997766B2 (en) Resin composition, method for producing the same, and resin film
TW201314364A (en) Resin composition and semiconductor element substrate
JP4437746B2 (en) Radiation sensitive resin composition
KR20080013963A (en) Radiation-sensitive resin composition, layered product, and process for producing the same
TWI417658B (en) Semiconductor element substrate
TWI307823B (en) Irradiation -sensitive resin composition, pattern forming process and process for manufacturing resin film
JP4206752B2 (en) Radiation sensitive resin composition
WO2005096100A1 (en) Radiation-sensitive composition, laminate, process for producing the sane and electronic part
JP5401835B2 (en) Positive-type radiation-sensitive resin composition, partition and organic electroluminescence device
JP4222306B2 (en) Positive-type radiation-sensitive resin composition, resin pattern film and method for forming the same, and use of resin pattern film
JP3965976B2 (en) Radiation sensitive resin composition, resin pattern forming method, resin pattern and use thereof
JP3952756B2 (en) Radiation sensitive resin composition and use thereof
JP4337602B2 (en) Radiation-sensitive composition, laminate, method for producing the same, and electronic component
JP2008242007A (en) Radiation-sensitive composition
JP2005292278A (en) Radiation sensitive composition, laminate and method for manufacturing same, and electronic component
JP4228858B2 (en) Process for producing hydrogenated cycloaliphatic olefin polymer and use thereof
JP3960042B2 (en) Radiation sensitive resin composition, resin pattern forming method, resin pattern and use thereof
JP2005292277A (en) Radiation sensitive composition, laminate and method for manufacturing same, and electronic component
TWI805898B (en) Resin composition, resin film and electronic part
JP2005292279A (en) Radiation sensitive composition, laminate and method for manufacturing same, and electronic component
JP2005041172A (en) Laminate and utilization therefor
CN116406453A (en) Radiation sensitive resin composition

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees