TWI415192B - 台型半導體裝置及其製造方法 - Google Patents

台型半導體裝置及其製造方法 Download PDF

Info

Publication number
TWI415192B
TWI415192B TW098119329A TW98119329A TWI415192B TW I415192 B TWI415192 B TW I415192B TW 098119329 A TW098119329 A TW 098119329A TW 98119329 A TW98119329 A TW 98119329A TW I415192 B TWI415192 B TW I415192B
Authority
TW
Taiwan
Prior art keywords
insulating film
film
trench
semiconductor layer
mesa
Prior art date
Application number
TW098119329A
Other languages
English (en)
Chinese (zh)
Other versions
TW200952085A (en
Inventor
關克行
鈴木彰
小田島慶汰
岡田喜久雄
龜山工次郎
Original Assignee
三洋電機股份有限公司
三洋半導體股份有限公司
三洋半導體製造股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機股份有限公司, 三洋半導體股份有限公司, 三洋半導體製造股份有限公司 filed Critical 三洋電機股份有限公司
Publication of TW200952085A publication Critical patent/TW200952085A/zh
Application granted granted Critical
Publication of TWI415192B publication Critical patent/TWI415192B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/422—PN diodes having the PN junctions in mesas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6318—Formation by simultaneous oxidation and nitridation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
TW098119329A 2008-06-12 2009-06-10 台型半導體裝置及其製造方法 TWI415192B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008153851A JP2009302222A (ja) 2008-06-12 2008-06-12 メサ型半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200952085A TW200952085A (en) 2009-12-16
TWI415192B true TWI415192B (zh) 2013-11-11

Family

ID=41413966

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098119329A TWI415192B (zh) 2008-06-12 2009-06-10 台型半導體裝置及其製造方法

Country Status (5)

Country Link
US (1) US8227901B2 (https=)
JP (1) JP2009302222A (https=)
KR (1) KR101075709B1 (https=)
CN (1) CN101604632B (https=)
TW (1) TWI415192B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010021532A (ja) * 2008-06-12 2010-01-28 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法
DE102011112659B4 (de) * 2011-09-06 2022-01-27 Vishay Semiconductor Gmbh Oberflächenmontierbares elektronisches Bauelement
CN104681633B (zh) * 2015-01-08 2018-05-08 北京时代民芯科技有限公司 具备低漏电高耐压终端结构的台面二极管及其制备方法
CN108028197A (zh) * 2015-09-30 2018-05-11 株式会社电装 半导体装置的制造方法
CN106098791A (zh) * 2016-06-16 2016-11-09 杭州赛晶电子有限公司 U型蚀刻直角台面硅二极管及其硅芯和制备方法
CN108365015A (zh) * 2017-12-29 2018-08-03 济南兰星电子有限公司 半导体二极管芯片及其制作方法
CN119673784B (zh) * 2024-11-20 2025-07-22 济南科盛电子有限公司 一种高效的gpp芯片玻璃钝化层制备工艺

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4179794A (en) * 1975-07-23 1979-12-25 Nippon Gakki Seizo Kabushiki Kaisha Process of manufacturing semiconductor devices
JPS57196585A (en) * 1981-05-28 1982-12-02 Nec Corp Manufacture of high-speed mesa type semiconductor device
TW391077B (en) * 1996-06-27 2000-05-21 Mitsubishi Electric Corp Semiconductor laser apparatus and method of fabricating the same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1485015A (en) 1974-10-29 1977-09-08 Mullard Ltd Semi-conductor device manufacture
US3973270A (en) * 1974-10-30 1976-08-03 Westinghouse Electric Corporation Charge storage target and method of manufacture
JPS51139281A (en) 1975-05-28 1976-12-01 Hitachi Ltd Semi-conductor device
US4389281A (en) 1980-12-16 1983-06-21 International Business Machines Corporation Method of planarizing silicon dioxide in semiconductor devices
JPS5943545A (ja) 1982-09-06 1984-03-10 Hitachi Ltd 半導体集積回路装置
US4738936A (en) * 1983-07-01 1988-04-19 Acrian, Inc. Method of fabrication lateral FET structure having a substrate to source contact
US4663832A (en) * 1984-06-29 1987-05-12 International Business Machines Corporation Method for improving the planarity and passivation in a semiconductor isolation trench arrangement
US4725562A (en) 1986-03-27 1988-02-16 International Business Machines Corporation Method of making a contact to a trench isolated device
US4775643A (en) 1987-06-01 1988-10-04 Motorola Inc. Mesa zener diode and method of manufacture thereof
KR940016546A (ko) * 1992-12-23 1994-07-23 프레데릭 얀 스미트 반도체 장치 및 제조방법
JP2001110799A (ja) * 1999-10-04 2001-04-20 Sanken Electric Co Ltd 半導体素子及びその製造方法
JP4200626B2 (ja) * 2000-02-28 2008-12-24 株式会社デンソー 絶縁ゲート型パワー素子の製造方法
JP3492279B2 (ja) 2000-03-21 2004-02-03 Ｎｅｃエレクトロニクス株式会社 素子分離領域の形成方法
US6383933B1 (en) 2000-03-23 2002-05-07 National Semiconductor Corporation Method of using organic material to enhance STI planarization or other planarization processes
JP2002261269A (ja) 2001-02-27 2002-09-13 Matsushita Electric Ind Co Ltd メサ型半導体装置の製造方法
JP3985582B2 (ja) * 2002-05-24 2007-10-03 松下電器産業株式会社 半導体装置の製造方法
JP2004319554A (ja) * 2003-04-11 2004-11-11 Oki Electric Ind Co Ltd 光半導体素子および光半導体素子の製造方法
JP2005051111A (ja) 2003-07-30 2005-02-24 Matsushita Electric Ind Co Ltd メサ型半導体装置
JP3767864B2 (ja) * 2004-02-16 2006-04-19 ローム株式会社 メサ型半導体装置の製法
JP2006100694A (ja) * 2004-09-30 2006-04-13 Matsushita Electric Ind Co Ltd メサ型半導体装置およびその製造方法
JP4901300B2 (ja) 2006-05-19 2012-03-21 新電元工業株式会社 半導体装置の製造方法
JP5117698B2 (ja) * 2006-09-27 2013-01-16 ルネサスエレクトロニクス株式会社 半導体装置
JP2010021532A (ja) 2008-06-12 2010-01-28 Sanyo Electric Co Ltd メサ型半導体装置及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4179794A (en) * 1975-07-23 1979-12-25 Nippon Gakki Seizo Kabushiki Kaisha Process of manufacturing semiconductor devices
JPS57196585A (en) * 1981-05-28 1982-12-02 Nec Corp Manufacture of high-speed mesa type semiconductor device
TW391077B (en) * 1996-06-27 2000-05-21 Mitsubishi Electric Corp Semiconductor laser apparatus and method of fabricating the same

Also Published As

Publication number Publication date
CN101604632B (zh) 2012-03-07
US8227901B2 (en) 2012-07-24
TW200952085A (en) 2009-12-16
JP2009302222A (ja) 2009-12-24
KR20090129367A (ko) 2009-12-16
KR101075709B1 (ko) 2011-10-21
CN101604632A (zh) 2009-12-16
US20090309194A1 (en) 2009-12-17

Similar Documents

Publication Publication Date Title
US8368181B2 (en) Mesa semiconductor device and method of manufacturing the same
TWI415192B (zh) 台型半導體裝置及其製造方法
CN110875241A (zh) 用于形成绝缘体上半导体（soi）衬底的方法
JP2009206502A (ja) メサ型半導体装置及びその製造方法
CN101465382B (zh) 台型半导体装置及其制造方法
JP2000196075A (ja) 半導体装置及びその製造方法
TWI405268B (zh) 台型半導體裝置及其製造方法
US20060255407A1 (en) Semiconductor device and manufacturing method of the same
US20260013161A1 (en) Semiconductor device and method of manufacturing the same
JP2013134998A (ja) 半導体装置およびその製造方法
JP2023173188A (ja) 半導体装置の製造方法
CN109994388A (zh) 一种半导体器件的制造方法、半导体器件和电子装置
US20250105078A1 (en) Semiconductor device and manufacturing method thereof
JP6542610B2 (ja) 半導体装置の製造方法
US20240290616A1 (en) Silicon carbide semiconductor device and manufacturing method of the same
CN111162008B (zh) 半导体装置及其制造方法
JP2008147268A (ja) メサ型半導体素子とその製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees