TWI414623B - 利用原位埋覆奈米層以改善機械特性之低ｋ值介電質化學氣相沉積薄膜形成製程 - Google Patents

利用原位埋覆奈米層以改善機械特性之低ｋ值介電質化學氣相沉積薄膜形成製程 Download PDF

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TWI414623B
TWI414623B TW095107313A TW95107313A TWI414623B TW I414623 B TWI414623 B TW I414623B TW 095107313 A TW095107313 A TW 095107313A TW 95107313 A TW95107313 A TW 95107313A TW I414623 B TWI414623 B TW I414623B
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Taiwan
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dielectric
layer
low
dielectric material
nanolayer
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TW095107313A
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Chinese (zh)
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TW200641177A (en
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蓋葉尚樊
連恩莎拉Ｌ
林尼格艾立克吉拉德
井田謙作
雷斯坦諾達林Ｄ
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萬國商業機器公司
蘇妮股份有限公司
蘇妮電子股份有限公司
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TW095107313A 2005-03-08 2006-03-03 利用原位埋覆奈米層以改善機械特性之低ｋ值介電質化學氣相沉積薄膜形成製程 TWI414623B (zh)

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EP1856735A4 (en) 2009-07-15
TW200641177A (en) 2006-12-01
US7265437B2 (en) 2007-09-04
US20100028695A1 (en) 2010-02-04
US7998880B2 (en) 2011-08-16
EP1856735A2 (en) 2007-11-21
CN101138085A (zh) 2008-03-05
US20060202311A1 (en) 2006-09-14
CN101138085B (zh) 2013-03-27
WO2006096813A3 (en) 2006-12-28
WO2006096813A2 (en) 2006-09-14
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