TWI413989B - 氧化鋅系導體 - Google Patents
氧化鋅系導體 Download PDFInfo
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- TWI413989B TWI413989B TW099121734A TW99121734A TWI413989B TW I413989 B TWI413989 B TW I413989B TW 099121734 A TW099121734 A TW 099121734A TW 99121734 A TW99121734 A TW 99121734A TW I413989 B TWI413989 B TW I413989B
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- zinc oxide
- gallium
- doping concentration
- ranges
- manganese
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 43
- 239000004020 conductor Substances 0.000 title claims abstract description 40
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 33
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000011572 manganese Substances 0.000 claims abstract description 21
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 20
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 4
- 210000004027 cell Anatomy 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 239000010408 film Substances 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- -1 oxygen ions Chemical class 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910001437 manganese ion Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- WAEMQWOKJMHJLA-UHFFFAOYSA-N Manganese(2+) Chemical compound [Mn+2] WAEMQWOKJMHJLA-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/02—Oxides; Hydroxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Manufacturing & Machinery (AREA)
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- Chemical & Material Sciences (AREA)
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- Photovoltaic Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
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- Physical Vapour Deposition (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Description
本發明主張2009年7月1日提出申請的韓國專利申請號10-2009-0059648之優先權，其全文在此併入作為參考。
本發明與氧化鋅系導體相關，更詳言之，與其中以鎵(Ga)及錳(Mn)共摻雜以獲得改善導電度的氧化鋅(ZnO)之氧化鋅系導體相關。
最近，已大規模進行開發高性能太陽能電池，做為針對電源短缺及環境污染之對策。太陽能電池可用於更種應用中，諸如電力及電子產品、房屋、建築與工業電源產生器的功率供應。以設計太陽能電池元件為基礎的科技被認為已經達到理論上的限制而因此面臨進一步開發的難題。據此，藉由改善形成太陽能電池電極的透明導電氧化物(TCO)之表現而改善太陽能電池之效能正獲得愈來愈多注意。
氧化銦(In2
O3
)廣泛地被用來做為TCO，且其含有少量錫以做為雜質。含有少量錫作為雜質的氧化銦膜(即In2
O3
-SnO2
矽膜)已知為氧化銦錫(ITO)膜。此膜廣泛地被使用，因其易於獲得低電阻膜。ITO膜令人滿意地實現了80%以上的高透明度以及10-4
Ωcm的卓越導電度，此為高效能太陽能電池所需求的。
廣泛的研究確定ITO具有許多作為TCO的優點。然而，ITO的供給是不穩定的，因為氧化銦為稀少的金屬且非常昂貴，其是在提煉氧化鋅的製程中以雜質之形式獲得。此外，當使用聚合物等基材時，TCO應該在低溫下形成以避免具有對顯示器裝置或基材有害的熱效應。然而，低溫下形成的ITO膜具有非常低的透光度。此外，由於微弱的熱阻，太陽能電池的效能在400℃以上劇烈滑落。此外，在氫電漿製程中，銦的高還原能力包發化學不穩定性。因此，開發可取代ITO的高性能表現的透明導體是迫切需要的，且其成為在近期研究中熱門的議題。
做為開發取代材料的一部分，SnO2
及ZnO正獲得注意而成為ITO之取代材料的最佳候選材料。
儘管SnO2
助於並被利用做為取代ITO的透明導電材料，其在長波長範圍(即900 nm以上)具有低光透明度且在氫電漿製程中會劣化。此外，由於諸如低導電度、約70%的低透明度等材料特質，故其具有許多限制。
氧化鋅(ZnO)為具有寬能帶間隙(即，約3.3 eV)的半導體材料。其已宣稱可藉由摻雜鋁或鎵等製做氧化鋅以呈現優越的透明度。因為氧化鋅相較於氧化銦為非常便宜，其已受到積極研究。使用摻質易於調整氧化鋅的電學及光學性質，因為氧化鋅容易摻雜且具有狹窄的導電能帶。氧化鋅可根據其對透明導體的可應用性而為理想的材料，因為其適於塗布大面積，且在氫電漿製程中穩定。此外，氧化鋅亦有利於藉由增加入射光的散射而使太陽能電池具有高光捕捉能力，因為其適於藉由紋理化而控制表面粗糙度。
鎵(Ga)及鋁(Al)等大體上可用做為添加至氧化鋅的摻質之範例。在鋁的實例中，缺點是鋁原子會與氧鍵結，因此容易喪失其載子的功效。
透明導體的需求可包括卓越的導電度以及高透明及光捕捉效能。為了從Ga摻雜氧化鋅獲得高導電度，需添加大量摻質。然而由於其固體溶解度受限，故不可能提昇其導電度至某個數值之上。
在本發明部份之此背景所揭露的資訊僅用於促進瞭解本發明之背景，而不應視為承認或以任何形式暗示此資訊構成為熟習此技藝者已知的先前技藝。
本發明之各種態樣是助於增加以鎵摻雜的氧化鋅系導體中固體溶解度限度，且因而改善電子密度、電子移動率以及導電度。
本發明之態樣中，氧化鋅系導體包括鎵及錳，ZnO受該二者摻雜。較佳為鎵的摻雜濃度範圍從0.01 at%(原子百分比)至10 at%，而錳的摻雜濃度範圍從0.01 at%至5 at%。更佳為鎵的摻雜濃度範圍從2 at%至8 at%，而錳的摻雜濃度範圍從0.1 at%至2 at%。再更佳為鎵的摻雜濃度範圍從4 at%至6 at%，而錳的摻雜濃度範圍從0.2 at%至1.5 at%。在本發明之示範性實施例中，氧化鋅系導體可為透明導體，其用做太陽能電池或液晶顯示器的電極。
根據本發明如上提出的示範性實施例，可藉由透過以錳及鎵共摻雜減輕壓力而增加氧化鋅中鎵的固體溶解度限度。據此，亦可改善GZO的電子密度及/或移動率，因而改善導電度。
再者，本發明如上提出的示範性實施例可改善諸如抗濕力之穩定性。
本發明知方法及設備具有許多特徵及優點，其可從於此併入的伴隨圖式、隨後的本發明之詳細說明而變得明顯易懂，該等圖式及詳細說明一併助於解釋本發明之某些原理。
現在可詳細參考本發明之各種實施例，其範例繪示於伴隨的圖式並且於以下描述。本發明將與示範性實施例一併描述，將可瞭解到本說明書不欲限制本發明於該等示範性實施例。相反地，本發明不僅欲涵蓋示範性實施例，亦欲涵蓋各種替代性、修改、等效及其他實施例，其可包含於附加的申請專利範圍所界定之本發明精神與範疇之內。
如第1圖所示，氧化鋅(ZnO)是II-VI族化合物半導體，其具有纖鋅礦晶體結構。
鋅離子位於由氧離子界定的四面體位點，而四個陰離子環繞每一鋅離子放置。Gn3+
可取代Zn2+
位點，因而生成自由電子。視鎵(Ga)的摻雜程度而定，電子密度趨於增加但移動率趨於減少。
以摻質添加至ZnO的鎵變成GZO中的供體，其增加電子密度，因而增加導電度。在此，決定添加至氧化物的摻質之固體溶解度限度的主要因素之一是宿主離子及摻質離子之間的離子半徑差異。即，當摻質溶解進入宿主離子位點時，該二離子之間的半徑差愈大，會引發愈多壓力。由於此熱力學不穩定性，鎵會立刻碰到固體溶解度限度，於是，第二相形成。
下表是顯示具有配位數為4的離子之離子半徑表。
具有配位數4的離子之離子半徑期望是0.06 nm。當鎵離子化以被四個離子環繞時，期望離子半徑為0.047
nm。當鎵離子進入鋅位點，取代宿主離子的鎵離子比宿主離子小約20%。此造成晶格常數減少。當鎵取代鋅，由於二離子之間尺寸差異造成的壓力引發鎵立刻碰到固體溶解度限度，其對電子密度與移動率產生影響。
錳離子以二價及四價離子之形式存在。當二價錳離子具有4之配位數時，其離子半徑為0.066 nm且因此比鋅離子之離子半徑大約10%。在此，因為錳的離子半徑大於鋅的離子半徑，可將因以鎵摻雜產生的壓力減輕至某種程度。即，因為以錳摻雜可減輕由於摻雜鎵所引發的收縮而造成的壓力，可增加ZnO中鎵的固體溶解度限度，且因而改善GZO的電子密度及移動率，以及導電度。
第2圖是顯示當ZnO以Ga摻雜時晶格常數的減少之圖表。
第2圖的圖表顯示GZO試樣的晶格常數，該GZO試樣是在空氣中以1300℃之溫度燒結2小時。左側垂直軸表示沿「a」軸的晶格常數，而右側垂直軸表示沿「c」軸的晶格常數。如圖所示，可瞭解到當鎵的摻雜濃度增加時，沿「c」軸的晶格常數減少。此是由於如上所述之鋅離子及鎵離子之間的離子半徑差異所造成。
因此，在本發明中，將錳做為第二添加劑添加至GZO以增加鎵離子的固體溶解度限度，因而改善其導電度及穩定度，諸如抗濕性。因為其導電度及抗濕性優於習知GZO，此具發明性的導體可用做液晶顯示器(LCD)及太陽能電池所用的透明導體之濺鍍靶。
下表是顯示根據組成物之電阻率、電子密度及電子移動率之表。
藉由在基材溫度250℃的條件下濺射氧化鋅系靶可將薄膜沉積於基材上，而沉積的薄膜氧化鋅導體之電阻率、載子密度以及移動率亦可測得。
與習知GZO相較(即由僅以鎵摻雜的氧化鋅所製造的氧化鋅導體)，可認知到本發明的氧化鋅系導體(即，由鎵及錳二者共摻雜氧化鋅所製造的導體)可使電阻率有可觀的降低，以及使載子密度及移動率具大幅增加。因此，此導體具有適合用於電極(諸如用於太陽能電池的TCO)或其他導體的特徵。
倘若鎵的摻雜濃度範圍從0.01 at%(原子百分比)至10 at%，而錳的摻雜濃度範圍從0.01 at%至5 at%，氧化鋅系導體較佳地具有卓越的特徵。更佳為鎵的摻雜濃度範圍從2 at%至8 at%，而錳的摻雜濃度範圍從0.1 at%至2 at%。再更佳為鎵的摻雜濃度範圍從4 at%至6 at%，
而錳的摻雜濃度範圍從0.2 at%至1.5 at%。
第3圖及第4圖是根據溫度、顯示氧化鋅系導體的電阻率、電子密度及霍爾移動率之圖表，其中，藉由使用各別以0.2 mol%及0.6 mol%之量添加MnO的靶材，而獲得該氧化鋅系導體。
以0.2 mol%及0.6 mol%之量添加氧化錳(MnO)的靶材在1 Pa的製程壓力以及靶至基材之距離為30 mm的條件下以DC 80W被濺射。之後，因此產生的膜導體之電阻率、載子密度及移動率可測得。
如圖所示，可認知到在基材溫度250℃下形成的膜導體相較於在0℃、150℃、200℃之基材溫度下形成者具有較佳的做為導體之特徵。
第5圖是顯示一範例的圖式，該範例中，根據本發明之示範性實施例之透明導體做為用於太陽能電池之TCO。
太陽能電池可大體上可區分成矽太陽能電池、化合物太陽能電池、染料敏化太陽能電池以及有機太陽能電池。在第5圖中，繪示非晶矽薄膜太陽能電池，其為矽太陽能電池中的一種類型。
相較於單晶矽(或多晶矽)基材，一a-Si：H薄膜具有非常短的載子擴散長度，其係由於基材本身之特徵。因此，倘若a-Si：H薄膜以np結構之形式製造，由光生成的電洞對之收集效能會非常低。因此，如圖所示，使用針狀結構，其中無添加雜質的本質型a-Si：H光吸收層50
插置在p型a-Si：H層40及n型a-Si：H層60之間。
在此結構中，由於上層的p型層40及下層的n型層60具有高摻雜濃度，故空乏發生在本質型a-Si：H光吸收層50，因此電場形成於本質型a-Si：H光吸收層50內側。
因此，在本質型a-Si：H層由光生成的電洞對藉由內部電場所致的漂移而被收集至n型層與p型層(而非藉由擴散)，因而生成電流。
太陽光透過玻璃基材10、TCO 20及p型層40入射至本質型a-Si：H光吸收層。此結構是由於入射光生成之電子與電洞之間的漂移移動率差異所造成。大體而言，因為電洞的漂移移動率低於電子之漂移移動率，欲減少電洞的位移需大多數載子形成於pi介面，因而使載子的收集性能最大化，其為由入射光所形成。由於該等理由，太陽光透過p型層入射至光吸收層50。因此，p型a-Si：H層40除了高導電度外亦需要具有高光學間隙。
在未於上文提及的元件符號中，30代表柵極，70代表後部電極。
氧化鋅系導體可做為透明導體，該透明導體不僅可用於太陽能電池中，還可用於各種其他領域(例如LCD之顯示裝置)中的電極中。
本發明的特定示範性實施例之前述的說明內容以為說明及描述等目的而呈現。其不欲徹底地將本發明限制在所揭露的精確的形式，而按照上述之教示，可明顯地進行修改及變化。示範性實施例是經過選擇與描述以解釋
本發明之某些原理以及其實施應用，因而能使熟習此技藝者製作及使用本發明之各種示範性實施例以及其各種替代形式與變化形式。其欲本發明之範疇由在此附加的申請專利範圍及其等效形式所界定。
10‧‧‧玻璃基材
20‧‧‧TCO
30‧‧‧柵極
40‧‧‧p型a-Si：H層
50‧‧‧本質型a-Si：H光吸收層
60‧‧‧n型a-Si：H層
70‧‧‧後部電極
第1圖是顯示具有纖鋅礦結構的單元晶格之圖式；第2圖是顯示當ZnO以Ga摻雜時晶格常數的減少之圖表；第3圖及第4圖是根據溫度、顯示氧化鋅系導體的電阻率、電子密度及霍爾移動率之圖表，其中，藉由使用各別以0.2 mol%及0.6 mol%之量添加MnO的靶材，而獲得該氧化鋅系導體；以及第5圖是顯示一範例的圖式，該範例中，根據本發明之示範性實施例之透明導體做為用於太陽能電池之TCO。
Claims (4)
- 一種氧化鋅系導體，其包含鎵及錳，該鎵及錳共摻雜氧化鋅，其中該鎵的摻雜濃度範圍從0.01 at%(原子百分比)至10 at%，而該錳的摻雜濃度範圍從0.01 at%至5 at%。
- 如請求項1所述之氧化鋅系導體，其中該鎵的摻雜濃度範圍從2 at%至8 at%，而該錳的摻雜濃度範圍從0.1 at%至2 at%。
- 如請求項2所述之氧化鋅系導體，其中該鎵的摻雜濃度範圍從4 at%至6 at%，而錳的摻雜濃度範圍從0.2 at%至1.5 at%。
- 如請求項1所述之氧化鋅系導體，其中該氧化鋅系導體是一透明導體，該透明導體用於一太陽能電池或一液晶顯示器之一電極。
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| TW499511B (en) * | 1999-08-13 | 2002-08-21 | Japan Science & Tech Corp | Low resistance p-type single crystalline zinc oxide and its manufacturing method |
| US20080315160A1 (en) * | 2005-02-24 | 2008-12-25 | Sekisui Chemicals Co., Ltd. | Gallium Containing Zinc Oxide |
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