JP2011011973A - 酸化亜鉛系伝導体 - Google Patents
酸化亜鉛系伝導体 Download PDFInfo
- Publication number
- JP2011011973A JP2011011973A JP2010151184A JP2010151184A JP2011011973A JP 2011011973 A JP2011011973 A JP 2011011973A JP 2010151184 A JP2010151184 A JP 2010151184A JP 2010151184 A JP2010151184 A JP 2010151184A JP 2011011973 A JP2011011973 A JP 2011011973A
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- doped
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- zinc oxide
- zno
- based conductor
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 84
- 239000004020 conductor Substances 0.000 title claims abstract description 43
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 40
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 abstract description 13
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 9
- 239000006104 solid solution Substances 0.000 abstract description 6
- 239000000243 solution Substances 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 13
- 239000011572 manganese Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- -1 oxygen ions Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910001437 manganese ion Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/02—Oxides; Hydroxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Non-Insulated Conductors (AREA)
- Physical Vapour Deposition (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Conductive Materials (AREA)
Abstract
【解決手段】ZnOに、GaとともにMnをコドーピングしてストレスを緩和させることにより、ZnO内でのガリウムの固溶限界を増加させ、これを通じて、GZOの電子濃度、移動度および電気伝導度を向上させ、耐湿性などの安定性(stability)を向上させることができる。好ましくは、前記Gaは0.01〜10at%、前記Mnは0.01〜5at%の濃度でドーピングされる。より好ましくは、前記Gaは2〜8at%、前記Mnは0.1〜2at%の濃度でドーピングされる。さらにより好ましくは、前記Gaは4〜6at%、前記Mnは0.2〜1.5at%の濃度でドーピングされる。前記酸化亜鉛系伝導体は、太陽電池の電極、LCDのようなディスプレイ装置の電極などに使用される透明伝導体とすることができる。
【選択図】図4
Description
40 p型a−Si:H層
50 i a−Si:H光吸収層
60 n型a−Si:H層
70 後面電極
Claims (5)
- ZnOに、GaとともにMnがコドーピングされていることを特徴とする酸化亜鉛系伝導体。
- 前記Gaは0.01〜10at%、前記Mnは0.01〜5at%の濃度でドーピングされることを特徴とする請求項1に記載の酸化亜鉛系伝導体。
- 前記Gaは2〜8at%、前記Mnは0.1〜2at%の濃度でドーピングされることを特徴とする請求項2に記載の酸化亜鉛系伝導体。
- 前記Gaは4〜6at%、前記Mnは0.2〜1.5at%の濃度でドーピングされることを特徴とする請求項3に記載の酸化亜鉛系伝導体。
- 太陽電池の電極または液晶表示装置の電極として使用される透明伝導体であることを特徴とする請求項1ないし4のいずれかに記載の酸化亜鉛系伝導体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090059648A KR101300560B1 (ko) | 2009-07-01 | 2009-07-01 | 산화아연계 전도체 |
KR10-2009-0059648 | 2009-07-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011011973A true JP2011011973A (ja) | 2011-01-20 |
JP5175902B2 JP5175902B2 (ja) | 2013-04-03 |
Family
ID=43412122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010151184A Active JP5175902B2 (ja) | 2009-07-01 | 2010-07-01 | 酸化亜鉛系伝導体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8241531B2 (ja) |
JP (1) | JP5175902B2 (ja) |
KR (1) | KR101300560B1 (ja) |
CN (1) | CN101944402B (ja) |
TW (1) | TWI413989B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014031565A (ja) * | 2012-08-06 | 2014-02-20 | Kochi Univ Of Technology | 酸化亜鉛を主成分とする膜構造体及びその製造方法、並びに該膜構造体からなる感受素子 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8988756B2 (en) * | 2008-01-31 | 2015-03-24 | Ajjer, Llc | Conductive busbars and sealants for chromogenic devices |
US10413980B2 (en) * | 2011-04-01 | 2019-09-17 | Milwaukee Electric Tool Corporation | Reciprocating saw, such as a jigsaw |
CN109980106B (zh) * | 2017-12-28 | 2020-12-25 | Tcl科技集团股份有限公司 | 电子传输材料及其制备方法和qled器件 |
KR102572134B1 (ko) | 2018-07-24 | 2023-08-28 | 삼성전자주식회사 | 양자점 소자와 표시 장치 |
CN115432731B (zh) * | 2022-10-12 | 2023-07-18 | 电子科技大学 | 一种反型Cs8Sn3GaI24/Cs8Sn3InI24杂化复合材料及其制备方法 |
US11827528B1 (en) * | 2023-06-15 | 2023-11-28 | King Fahd University Of Petroleum And Minerals | Co-doped zinc oxide nanoparticles as electron transport material |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0769630A (ja) * | 1993-08-31 | 1995-03-14 | Mitsubishi Materials Corp | 分散性に優れた酸化亜鉛粉末 |
JP2002080846A (ja) * | 2000-06-30 | 2002-03-22 | Tosoh Corp | ガリウム酸亜鉛粉末、ガリウム酸亜鉛粉末からなる蛍光体及びこれらの製造方法 |
JP2006059722A (ja) * | 2004-08-20 | 2006-03-02 | Tdk Corp | 透明導電材料及び透明導電体 |
WO2006090806A1 (ja) * | 2005-02-24 | 2006-08-31 | Sekisui Chemical Co., Ltd. | ガリウム含有酸化亜鉛 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56110779A (en) * | 1980-02-06 | 1981-09-02 | Matsushita Electric Ind Co Ltd | Display device |
KR100319488B1 (ko) * | 1999-05-29 | 2002-01-05 | 김충섭 | 규화아연계 녹색 형광체 |
JP4126332B2 (ja) * | 1999-08-13 | 2008-07-30 | 学校法人高知工科大学 | 低抵抗p型単結晶酸化亜鉛およびその製造方法 |
US7501208B2 (en) * | 2001-06-01 | 2009-03-10 | Eveready Battery Company, Inc. | Doped manganese dioxides |
JP2006012783A (ja) * | 2004-05-21 | 2006-01-12 | Tdk Corp | 透明導電材料、透明導電ペースト、透明導電膜及び透明電極 |
CN100341788C (zh) * | 2005-06-13 | 2007-10-10 | 中国科学院理化技术研究所 | 溶胶凝胶制备掺杂的氧化锌双晶纳米带的方法 |
CN100463935C (zh) * | 2005-08-17 | 2009-02-25 | 长春迪高实业有限公司 | 阳光控制低辐射透明薄膜及其制备方法和用途 |
JP2007173313A (ja) * | 2005-12-19 | 2007-07-05 | Toshiba Corp | 電流−電圧非直線抵抗体 |
JP5260881B2 (ja) * | 2007-03-20 | 2013-08-14 | 三菱瓦斯化学株式会社 | Mg含有ZnO系混晶単結晶、その積層体およびそれらの製造方法 |
CN100595847C (zh) * | 2007-12-14 | 2010-03-24 | 浙江大学 | 一种透明导电薄膜及其制备方法 |
-
2009
- 2009-07-01 KR KR1020090059648A patent/KR101300560B1/ko active IP Right Grant
-
2010
- 2010-06-28 US US12/824,922 patent/US8241531B2/en not_active Expired - Fee Related
- 2010-06-30 CN CN201010219230.9A patent/CN101944402B/zh active Active
- 2010-07-01 TW TW099121734A patent/TWI413989B/zh active
- 2010-07-01 JP JP2010151184A patent/JP5175902B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0769630A (ja) * | 1993-08-31 | 1995-03-14 | Mitsubishi Materials Corp | 分散性に優れた酸化亜鉛粉末 |
JP2002080846A (ja) * | 2000-06-30 | 2002-03-22 | Tosoh Corp | ガリウム酸亜鉛粉末、ガリウム酸亜鉛粉末からなる蛍光体及びこれらの製造方法 |
JP2006059722A (ja) * | 2004-08-20 | 2006-03-02 | Tdk Corp | 透明導電材料及び透明導電体 |
WO2006090806A1 (ja) * | 2005-02-24 | 2006-08-31 | Sekisui Chemical Co., Ltd. | ガリウム含有酸化亜鉛 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014031565A (ja) * | 2012-08-06 | 2014-02-20 | Kochi Univ Of Technology | 酸化亜鉛を主成分とする膜構造体及びその製造方法、並びに該膜構造体からなる感受素子 |
Also Published As
Publication number | Publication date |
---|---|
TWI413989B (zh) | 2013-11-01 |
JP5175902B2 (ja) | 2013-04-03 |
KR20110002190A (ko) | 2011-01-07 |
TW201103039A (en) | 2011-01-16 |
CN101944402A (zh) | 2011-01-12 |
US8241531B2 (en) | 2012-08-14 |
KR101300560B1 (ko) | 2013-09-03 |
US20110001095A1 (en) | 2011-01-06 |
CN101944402B (zh) | 2015-10-14 |
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