TWI412168B - Organic crystal and its manufacturing method - Google Patents
Organic crystal and its manufacturing method Download PDFInfo
- Publication number
- TWI412168B TWI412168B TW096103956A TW96103956A TWI412168B TW I412168 B TWI412168 B TW I412168B TW 096103956 A TW096103956 A TW 096103956A TW 96103956 A TW96103956 A TW 96103956A TW I412168 B TWI412168 B TW I412168B
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- Prior art keywords
- organic
- layer
- insulating layer
- inorganic barrier
- barrier layer
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000013078 crystal Substances 0.000 title description 2
- 230000004888 barrier function Effects 0.000 claims abstract description 98
- 239000004065 semiconductor Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000002861 polymer material Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 20
- 229920000592 inorganic polymer Polymers 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 229910010272 inorganic material Inorganic materials 0.000 claims description 11
- 239000011147 inorganic material Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 238000009489 vacuum treatment Methods 0.000 claims description 5
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 4
- 229920000768 polyamine Polymers 0.000 claims 2
- 239000010410 layer Substances 0.000 description 265
- 239000000463 material Substances 0.000 description 14
- -1 azo compound Chemical class 0.000 description 13
- 239000010408 film Substances 0.000 description 13
- 239000011368 organic material Substances 0.000 description 13
- 229920000642 polymer Polymers 0.000 description 12
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 8
- 229920000547 conjugated polymer Polymers 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
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- 239000011347 resin Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
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- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- WSFSSNUMVMOOMR-UHFFFAOYSA-N formaldehyde Natural products O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000007974 melamines Chemical class 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 150000002923 oximes Chemical class 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- YGVYHUGLHHFGNN-UHFFFAOYSA-N (2-phenylcyclobuten-1-yl)benzene Chemical compound C1CC(C=2C=CC=CC=2)=C1C1=CC=CC=C1 YGVYHUGLHHFGNN-UHFFFAOYSA-N 0.000 description 1
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical class [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- UYVWNPAMKCDKRB-UHFFFAOYSA-N 1,2,4,5-tetraoxane Chemical compound C1OOCOO1 UYVWNPAMKCDKRB-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910013500 M-O—Si Inorganic materials 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229940083094 guanine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 229940097275 indigo Drugs 0.000 description 1
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical class N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 150000004033 porphyrin derivatives Chemical class 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- MWWATHDPGQKSAR-UHFFFAOYSA-N propyne Chemical class CC#C MWWATHDPGQKSAR-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- IZMJMCDDWKSTTK-UHFFFAOYSA-N quinoline yellow Chemical class C1=CC=CC2=NC(C3C(C4=CC=CC=C4C3=O)=O)=CC=C21 IZMJMCDDWKSTTK-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 150000001629 stilbenes Chemical class 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 150000001651 triphenylamine derivatives Chemical class 0.000 description 1
- 150000004961 triphenylmethanes Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3125—Layers comprising organo-silicon compounds layers comprising silazane compounds
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
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- H—ELECTRICITY
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Description
本發明係關於有機電晶體及其製造方法。
有機電晶體期望可彈性地使用可塗佈形成之有機材料且應用於顯示器之驅動元件及IC標籤。MOS-FET(metal Oxide semiconductor field-effect transistor)構造之有機電晶體,於基板上、具備閘極、閘極絕緣層、源極、汲極、以及有機半導體層,對源極及汲極間,從閘極介由閘極絕緣層施加電壓,來控制流過有機半導體層之電流。
此外,近年來,積極地進行有機TFT(thin film transistor)之研究,其應用之一例,例如,希望藉由有機半導體本身之柔軟性及樹脂基板,而能應用於撓性顯示器。有機TFT之半導體層,大都以蒸鍍來實施成膜,其中,研究最多之並五苯,具有移動度為1cm2
/Vs以上之與非晶矽相同或其以上之性能,故很可能被應用於有機半導體元件。
此外,為了將有機TFT之優點發揮至最大,在低成本處理之前提下,嚐試利用印刷技術等之塗佈來形成有機TFT,並嚐試以塗佈高分子半導體之聚烷基噻吩及並五苯前驅物等之低分子來實施成膜等。此外,不但針對半導體層進行檢討,也針可做為閘極絕緣層之材料之可溶解於可以塗佈實成膜之高分子之溶劑之材料進行檢討。
專利文獻1係為了以高分子形成高介電常數之閘極絕緣層,而提出於由cyanoethylpullulan之含有氰基之高介電常數之高分子材料所構成之非晶絕緣物分散著高介電常數之金屬氧化物之微粒子之閘極絕緣膜。然而,高介電常數之高分子材料,一般而言,體積電阻率較低,此外,因為較大之極化,故載體會局部化,而有電晶體之性能降低,且表面性變差之傾向。
相對於此,專利文獻2及3則提出,採用積層構造之閘極絕緣層,閘極側之第1層採用高介電常數之絕緣層,第2層則採用低介電常數且平坦之高分子材料,而為高性能之有機電晶體。
[專利文獻1]日本特開2002-110999號公報[專利文獻2]日本持開2005-72569號公報[專利文獻3]日本特開2005-26698號公報
然而,閘極絕緣層由高分子材料所構成時,於形成源極及汲極時之蝕刻或射出製程,使用鹼性顯影液或酸之蝕刻液等時,液所含有之離子成分會侵入閘極絕緣層中。此外,以塗佈來實施有機半導體層之成膜時,使用溶解有機半導體之溶媒中之離子成分及塗佈型有機半導體材料時,有機半導體中之離子成分及低分子之塗佈型有機半導體會浸透其本身係由高分子材料所構成之閘極絕緣層中。
如此,離子成分或有機半導體材料若侵入閘極絕緣層中,會成為電晶體之完成品之閘極發生漏電流之原因,斷開時之電流會變大,而降低on/off比。
針對閘極之漏電流之對策,如利用濺鍍等來形成如SiO2
之無機材料之閘極絕緣層之方法,然而,只以無機材料構成閘極絕緣層,若為撓性基板,則彎曲時,會發生龜裂等而有影響彎曲強度之問題。
本發明所欲解決之課題之一例係如上述之問題。
因此,本發明之目的係在提供,可應用撓性基板,且可降低閘極之漏電流之有機電晶體。
申請專利範圍第1項所記載之發明係於基板上具備:配設於一對之源極及汲極、及前述源極及前述汲極間之有機半導體層;及介由閘極絕緣層配設於前述有機半導體層之閘極;之有機電晶體,係其特徵為:前述閘極絕緣層係至少含有有機絕緣層及無機障壁層之積層構造之有機電晶體。
申請專利範圍第10項所記載之發明係用以製造於基板上具備:配設於一對之源極及汲極、前述源極及前述汲極間之有機半導體層;及介由閘極絕緣層配設於前述有機半導體層之閘極;之有機電晶體之方法,係其特徵為:用以形成前述閘極絕緣層之製程係形成至少含有有機絕緣層及無機障壁層之積層構造之有機電晶體之製造方法。
以下,參照圖面,針對本發明之實施例進行說明。此外,本發明並未受限於以下之說明。
本發明之有機電晶體具備:配設於基板、一對之源極及汲極、該源極及汲極間之有機半導體層;及介由閘極絕緣層配設於該有機半導體層之閘極。於對源極及汲極間施加電壓之狀態下,從閘極介由閘極絕緣層對有機半導體層施加電壓,於有機半導體層會形成從源極流向汲極之電流。
本發明之特徵係閘極絕緣層至少含有有機絕緣層及無機障壁層之積層構造。依據此種構成,因為從閘極之漏電流之通路存在著無機障壁層,故可防止漏電流之擴散。
亦即,期望有機電晶體之閘極絕緣層為可塗佈形成之撓性材料之含有有機材料之有機絕緣層,只以有機絕緣層構成閘極絕緣層,形成源極及汲極時之離子成分、及形成有機半導體層時之溶劑之離子成分及有機半導體本身,可能會侵入有機絕緣層,而閘極之漏電流也可能因為該原因而擴散,進行提高電晶體斷開時之電流值。相對於此,如本發明所示,閘極絕緣層係含有有機絕緣層及無機障壁層之積層構造,利用有機絕緣層維持閘極絕緣層之絕緣性及柔軟性之構成,閘極絕緣層中之無機障壁層成為障壁而防止閘極之漏電流之擴散,故可降低閘極之漏電流。
無機障壁層與有機材料相比,不但對漏電流具有相對較高之障壁性能,尚可維持良好之防止離子成分及有機半導體材料之成分侵入之良好高障壁性能,故可有效地防止漏電流之擴散。此外,無機障壁層可以後述之塗佈法來形成,故也可簡化製程。
有機電晶體之一實例如第1圖所示,於基板1上形成閘極2,於閘極2上形成閘極絕緣層3,於閘極絕緣層3上形成互相分離之一對之源極4及汲極5,於其上之源極4及汲極5間之區域,以接觸閘極絕緣層3之方式形成有機半導體層6。
第1圖所示之閘極絕緣層3,係從閘極2側依序積層著有機絕緣層3a及無機障壁層3b。此種構成時,不但可以利用有機絕緣層3a維持絕緣性,尚可利用無機障壁層3b防止閘極2之漏電流之擴散。此外,因為閘極絕緣層3整體薄於無機障壁層3b,故可利用有機絕緣層之柔軟性來提高彎曲強度。此外,有機絕緣層3a及無機障壁層3b皆利用塗佈處理來形成,故可簡化製程而實現低成本化。第1圖所示之實例時,有機絕緣層3a及無機障壁層3b係只在上下方向積層之構成,然而,亦可以如第2圖所示之構成,亦即,除了上下方向以外,於側面方向也同樣積層著有機絕緣層3a及無機障壁層3b。如此,以環繞閘極2之表面及側面之方式配設無機障壁層3b,亦可降低從側面方向之漏電流之擴散。此外,亦可如第3圖所示,亦即,只於源極4及有機絕緣層3a之間、及汲極5及有機絕緣層3a之間介設無機障壁層3b。
此外,本發明之閘極絕緣層之其他形態如第4圖所示,係從閘極2側依序積層第1層之有機絕緣層3a、無機障壁層3b、以及第2層之有機絕緣層3c。如此,於2層之有機絕緣層3a、3c之間配設著無機障壁層3b之構成時,也可防止閘極2之漏電流之擴散。2層之有機絕緣層3a、3c可以使用相同之有機材料,也可使用不同之有機材料。例如,閘極側之第1層之有機絕緣層3a採用介電常數相對較高之有機材料,而有機半導體層側之第2層之有機絕緣層3c則採用具有液晶配光等之機能之材料,可以發揮各自之機能。第5圖所示之實例,係只有上下方向積層著第1層之有機絕緣層3a、無機障壁層3b、以及第2層之有機絕緣層3c之構成,然而,亦可如第4圖所示之構成,亦即,除了上下方向以外,尚於側面方向同樣積層著第1層之有機絕緣層3a、無機障壁層3b、以及第2層之有機絕緣層3c,亦可減少側面之漏電流。
此外,本發明之閘極絕緣層之其他形態如第6圖所示,係從閘極2側依序積層著無機障壁層3b及有機絕緣層3a。如此,於閘極2側配設著無機障壁層3b,亦可防止閘極2之漏電流之擴散。此外,以高介電常數之材料形成無機障壁層3b,而以低介電常數之材料形成有機絕緣層3a,可以得到高性能之電晶體構造。如第6圖所示之例時,係只在上下方向積層著無機障壁層3b及有機絕緣層3a之構成,然而,亦可如第7圖所示之構成,除了上下方向以外,於側面方向也同樣積層著無機障壁層3b及有機絕緣層3a,可以減少側面之漏電流。
此外,上方端子型之有機電晶體之實例時,如第8圖所示,於基板1上依序形成閘極2、有機絕緣層3a、無機障壁層3b、有機半導體層6,於有機半導體層6上形成互相分離之源極4及汲極5。此種構成時,可以利用無機障壁層防止閘極之漏電流。
此外,本發明之閘極絕緣層並未受限於上述形態,有機絕緣層及無機障壁層之積層數、積層順序、及種類可進行適度變更。
閘極絕緣層之無機障壁層係含有無機材料做為主要成分之可對漏電流發揮障壁性能者。無機障壁層應利用塗佈處理或真空處理來形成。
無機障壁層係於閘極、有機絕緣體層、或有機半導體層等之底層之層上塗佈無機高分子材料,對該無機高分子材料實施加熱處理、UV處理、或UV處理及臭氧處理之組合使其變換成無機材料而形成。此種無機高分子材料如含有M-O-Si(M為金屬)結合之金屬噁烷或Si-N結合之聚矽胺烷等。金屬噁烷之一例如含有M為Si之Si-0-Si結合之聚矽氧烷、或含有Ti之多鈦金屬噁烷。使用該等來執行加熱處理,可以得到含有以氧化矽及/或氧化鈦為主要成分之無機材料。利用此種塗佈處理,可以使無機障壁層之介電常數在於2.0至TiO2
之一般介電常數之48為止之範圍。此外,對該等無機高分子材料實施UV處理、或利用UV處理及臭氧層之組合亦可使其變換成無機材料。
此外,無機高分子材料之加熱處理之處理溫度應為400℃以下,200℃以下為佳。超過該溫度,於形成無機障壁層之前,已經形成有機絕緣層或有機導電體層等之有機材料時、或使用樹脂基板做為基板時,該等有機材料可能因熱而變質。
此外,無機高分子材料之塗佈方法如旋轉塗佈或浸塗等。必要時,可以將無機高分子材料溶解於1-丁酮等之溶媒來進行塗佈。
以此種方式形成之無機障壁層,因為可對漏電流發揮障壁性能,故可防止閘極之漏電流之擴散,而提供高性能之有機電晶體。此外,因為無機障壁層可塗佈形成,以低成本即可形成均質之膜。因為可以低溫之加熱處理、或用以取代加熱處理之UV處理或UV處理及臭氧處理之組合來形成,可以防止下層之有機材料因熱受損。
此外,無機障壁層可以利用真空蒸鍍法、真空濺鍍法、或CVD法等之真空處理來形成。利用此種真空處理,可以形成含有氧化矽等之金屬氧化物或氮化矽等之金屬氮化物等之無機膜。利用真空處理,可以形成均質且緻密之無機膜。
無機障壁層之表面平均粗糙度應為0.1nm以上、50nm以下,1.5nm以下為佳,未滿足該範圍之粗糙度難以實現均質製作,超過該範圍,對接觸無機障壁層之層之材料會產生影響而降低電晶體性能。
無機障壁層之厚度應為5nm以上、700nm以下,500nm以下為佳,薄於該範圍之分子等級之厚度5nm程度時,難以形成均質之層,超過該範圍時,閘極絕緣層之容許厚度為1 μm程度,相對於有機絕緣層之無機障壁層之比例較大,而無法活用有機絕緣層之特性。
閘極絕緣層之有機絕緣層應含有具有絕緣性之有機材料,最好為可塗佈成形之撓性材料。此外,如第1圖所示之例,於形成有機絕緣層之後再形成源極、汲極、以及有機半導體層時,有機絕緣層應使用對形成源極及汲極時之離子成分及形成有機半導體層時之溶劑及有機半導體本身等具有耐受性之有機材料。此外,對製程之熱處理等應具有耐受性。
此種有機絕緣層之一例,例如,對PVP(聚乙烯苯酚)及三聚氰胺衍生物之混合物實施硬化之物。此外,該等高分子材料只要具有耐溶劑性及耐熱性,則不一定要實施硬化。其他,例如,聚醯亞胺、聚倍半矽氧烷、二苯環丁烯等。
有機絕緣層之形成方法,例如塗佈法。例如,將PVP及三聚氰胺衍生物之混合物等高分子材料溶解於溶劑,並塗佈於底層之層,進行適度乾燥後實施適度硬化。
有機絕緣層之厚度應為50nm~1 μm,層厚若太薄,動作中,可能發生閘極漏電,層厚若太厚,則電場效果較小,動作中,需要高電壓。
以此方式形成之有機絕緣層之介電常數為2.0~18。
次,具體之閘極絕緣層之形成方法,為了形成如第1圖所示之有機電晶體,於基板1上形成閘極2後,於閘極2上塗佈具有絕緣性之有機材料,實施適度乾燥及硬化,形成有機絕緣層3a,其次,於有機絕緣層3a上塗佈無機高分子材料,利用下層之有機絕緣層3a之分解溫度以下之加熱處理,將無機高分子材料變換成無機材料來形成無機障壁層3b。藉由此方法,因為可以在有機絕緣層3a之分解溫度以下處理無機障壁層3b,故可在保護有機絕緣層3a下形成無機障壁層3b。此外,因為閘極絕緣層3之上層係無機障壁層3b,故可保護形成於其上之源極4及汲極5,以及在形成有機半導體層6時,可以利用無機障壁層3b保護有機絕緣層3a。此外,第2圖及第3圖所示之閘極絕緣層亦可以相同方法來形成。
為了形成第4圖所示之有機電晶體,依據前述之方法,形成第1層之有機絕緣層3a及無機障壁層3b,此外,於無機障壁層3b上,以與第1層相同之方法形成第2層之有機絕緣層3c。藉由此方法,可以於有機絕緣層3a之分解溫度以下處理無機障壁層3b,故可保護第1層之有機絕緣層3a而形成無機障壁層3b。此外,積層2種以上之有機絕緣層時,於其間介設無機障壁層3b,於形成第2層之有機絕緣層3c時,可以防止組成於有機絕緣層間擴散。此外,第5圖所示之閘極絕緣層也可以相同方法來形成。
為了形成第6圖所示之有機電晶體,於基板1上形成閘極2後,於閘極2上塗佈無機高分子材料並實施加熱處理,將無機高分子材料變換成無機材料而形成無機障壁層3b,其次,於無機障壁層3b上,塗佈具有絕緣性之有機材料並實施適度乾燥及硬化,而形成有機絕緣層3b。藉由此方法,因為無機障壁層3b之下層為閘極2,故可將無機障壁層3b之處理溫度設定於較高。此外,使用樹脂基板時,在用以形成樹脂基板之樹脂之分解溫度以下進行處理。此外,第7圖所示之閘極絕緣層亦可以相同方法來形成。
此外,基板並無特別限制,除了玻璃基板等以外,只要無機障壁層之處理溫度可以為400℃以下,亦可以為PES(聚醚碸)、PC(聚碳酸酯)等之塑膠基板、或玻璃及塑膠之貼合基板,此外,亦可以為表面覆蓋著鹼性障壁膜或氣體障壁膜之基板。
此外,有機半導體層只要為具有半導體特性之有機材料即可,除了並五苯以外,例如,亦可以為低分子系材料之酞花青系衍生物、naphthalocyanine系衍生物、偶氮化合物系衍生物、苝系衍生物、靛青系衍生物、喹吖酮系衍生物、蒽醌類等之多環醌系衍生物、花青系衍生物、碳簇類衍生物、或吲哚、咔唑、噁唑、inoxazole、噻唑、咪唑、吡唑、oxadiazole、吡唑啉、三唑等之含氮環式化合物衍生物、肼衍生物、三苯胺衍生物、三苯甲烷衍生物、二苯乙烯類、蒽醌聯對苯醌等之醌化合物衍生物、卟啉衍生物、蒽、芘、菲、蔻等之多環芳香族化合物衍生物等。高分子材料如具有交互結合著聚對苯等之芳香族系共軛性高分子、聚乙炔等之脂肪族系共軛性高分子、聚松腦或聚噻吩等之雜環共軛性高分子、聚苯胺類或聚苯硫等之含異原子共軛性高分子、聚(苯基乙烯)或聚(苯胺基乙烯)或聚(噻吩基乙烯)等之共軛性高分子之構成單位之構造之複合型共軛系高分子等之碳系共軛高分子。此外,如交互鍵聯著聚矽烷類、乙矽烷基丙炔聚合物類、(乙矽烷基)乙烯撐聚合物類、(乙矽烷基)乙炔撐聚合物類之乙矽烷基碳系共軛性聚合物構造等之寡矽烷類及碳系共軛性構造之高分子類等。其他,也可以為由磷系、氮系等之無機元素所構成之聚合物鏈,此外,如酞青酯聚矽氧烷之配位著聚合物鏈之芳香族系配位基之高分子類、如對苝四羧酸之苝類實施熱處理使其產生增環反應之高分子類、對具有聚丙烯腈等之氰基之聚乙烯衍生物實施熱處理所得到之階梯型高分子類、以及於鈣鈦礦類插入有機化合物之複合材料。
此外,源極及汲極、或閘極之材料,並無特別限制,只要具有充分導電性即可。例如,Cr、Pt、Au、W、Ru、Ir、Al、Sc、Ti、V、Mn、Fe、Co、Ni.Zn、Ga、Y、Zr、Nb、Mo、Tc、Rh、Pd、Ag、Cd、Ln、Sn、Ta、Re、Os、Tl、Pb、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu等之金屬單體或積層體,或該等化合物。此外,如含有ITO(Indium Tin Oxide)或IZ0(Indium Zinc Oxide)之金屬氧化物類、聚苯胺類、聚噻吩類、聚吡洛類等之共軛性高分子化合物之有機導電材料。
如以上之說明所示,依據本發明,係具備:配設於基板、一對之源極及汲極、源極及汲極間之有機半導體層;及介由閘極絕緣層配設於有機半導體層之閘極;之有機電晶體,藉由閘極絕緣層至少含有有機絕緣層及無機障壁層之積層構造,可以減少閘極之漏電流。
此外,係用以製造具有:配設於基板、一對之源極及汲極、源極及汲極間之有機半導體層;及介由閘極絕緣層配設於有機半導體層之閘極;有機電晶體之方法,藉由用以形成閘極絕緣層之製程係形成至少含有有機絕緣層及無機障壁層之積層構造,可以減少閘極之漏電流。
以下,針對本發明之實施例進行說明。此外,本發明並未受限於實施例。
本實施例時,製作如第1圖所示之有機電晶體。本實施例之有機電晶體之製造方法之流程圖如第9圖所示。
於玻璃基板1上,實施做為閘極2使用之Cr之成膜,以蝕刻實施圖案化。
於該閘極2上,以2000rpm之旋轉塗佈塗佈於PEGMEA(聚乙二醇甲基醚丙烯酸酯)中混合著8wt%之聚乙烯苯酚(Mw=20000)及4wt%之甲基化聚三聚氰胺.甲醛共聚合物(Mn=511)之溶液,實施100℃之2分乾燥、200℃之5分加熱硬化,形成有機絕緣層3a。SEM觀察之檢測結果(以下相同),有機絕緣層3a之厚度為270nm。
其次,於該有機絕緣層3a上,以1000rpm之旋轉塗佈塗佈10Wt%之多鈦金屬噁烷溶解於1-丁酮溶之溶液,實施100℃之2分乾燥、200℃之5分加熱,變換無機膜成而形成無機障壁層3b。無機障壁層3b之厚度為100nm。
其次,於該無機障壁層3b上,以真空蒸鍍利用光刻實施圖案化,形成由Au所構成之源極4及汲極5,於其上,利用真空蒸鍍法實施並五苯之成膜,形成有機半導體層6,製成有機電晶體。
本實施例時,製作第4圖所示之有機電晶體。本實施例之有機電晶體之製造方法之流程圖如第10圖所示。以下之說明係針對本實施例之特徵構成進行說明,與上述實施例1共同之構成則省略其說明。
本實施例時,閘極絕緣層3係與上述實施例1相同,於閘極2上依序形成第1層之有機絕緣層3a及無機障壁層3b,此外,於該無機障壁層3b上,以與第1層相同之方法形成第2層之有機絕緣層3c。第1層之有機絕緣層3a、無機障壁層3b、以及第2層之有機絕緣層3c之厚度分別為150nm、100nm、以及120nm。
此外,有機半導體層6係於源極4及汲極5上以1000rpm之旋轉塗佈塗佈聚3-己烷噻吩之氯仿1wt%溶液而形成。
本實施例時,製作第6圖所示之有機電晶體。本實施例之有機電晶體之製造方法之流程圖如第11圖所示。以下之說明係針對本實施例之特徵構成進行說明,與上述實施例1及2共同之部分省略其說明。
本實施例時,閘極絕緣層3係於閘極2上以與上述實施例1相同之方法形成無機障壁層3b,於該無機障壁層3b上,以與上述實施例1相同之方法形成有機絕緣層3a。無機障壁層3b及有機絕緣層3a之厚度分別為100nm及270nm。此外,有機半導體層6係以與實施例2相同之方法形成於源極4及汲極5上。
比較例1並未圖示,係如上述實施例1,其閘極絕緣體層係未含有無機障壁層而只由有機絕緣層所構成者,其他之構成與實施例1相同,故省略其說明。有機絕緣層之厚度為370nm。
比較例2並未圖示,係如上述實施例2,其閘極絕緣體層係未含有無機障壁層而只由有機絕緣層所構成者,其他之構成與實施例2相同,故省略其說明。有機絕緣層之厚度為370nm。
表1係上述之實施例及比較例之處理後之閘極漏電流之評估結果。
如表1可知,含有將實施例1~3之無機高分子材料無機化之膜當做無機障壁層之閘極絕緣層,可以減少處理後之閘極漏電流。
1...基板
2...閘極
3...閘極絕緣層
3a、3c...有機絕緣層
3b...無機障壁層
4...源極
5...汲極
6...有機半導體層
第1圖係本發明之實施形態之有機電晶體之一例之剖面模式圖。
第2圖係第1圖所示之有機電晶體之閘極絕緣層之其他形態之剖面模式圖。
第3圖係第2圖所示之有機電晶體之閘極絕緣層之其他形態之剖面模式圖。
第4圖係本發明之實施形態之有機電晶體之其他實例之剖面模式圖。
第5圖係第4圖所示之有機電晶體之閘極絕緣層之其他形態之剖面模式圖。
第6圖係本發明之實施形態之有機電晶體之其他實例之剖面模式圖。
第7圖係第6圖所示之有機電晶體之閘極絕緣層之其他形態之剖面模式圖。
第8圖係本發明之實施形態之有機電晶體之上方端子型之例之剖面模式圖。
第9圖係本發明之實施例1之有機電晶體之製造方法之流程圖。
第10圖係本發明之實施例2之有機電晶體之製造方法之流程圖。
第11圖係本發明之實施例3之有機電晶體之製造方法之流程圖。
1...基板
2...閘極
3...閘極絕緣層
3a...有機絕緣層
3b...無機障壁層
4...源極
5...汲極
6...有機半導體層
Claims (19)
- 一種有機電晶體,係具備:配設於基板、一對之源極及汲極、前述源極及前述汲極間之有機半導體層;及介由閘極絕緣層配設於前述有機半導體層之閘極;之有機電晶體,其特徵為:前述閘極絕緣層係至少含有有機絕緣層及無機障壁層之積層構造。
- 如申請專利範圍第1項所記載之有機電晶體,其中前述閘極絕緣層係從前述閘極側依序積層著前述有機絕緣層及前述無機障壁層。
- 如申請專利範圍第1項所記載之有機電晶體,其中前述閘極絕緣層係從前述閘極側依序積層著第1層之前述有機絕緣層、前述無機障壁層、及第2層之前述有機絕緣層。
- 如申請專利範圍第1項所記載之有機電晶體,其中前述閘極絕緣層係從前述閘極側依序積層著前述無機障壁層及前述有機絕緣層。
- 如申請專利範圍第1至4項之其中任一項所記載之有機電晶體,其中前述無機障壁層係含有將無機高分子材料以加熱處理 、UV處理、或UV處理及臭氧處理之組合所變換成之無機材料。
- 如申請專利範圍第5項所記載之有機電晶體,其中前述無機高分子材料係金屬噁烷(metalloxane)或聚矽胺烷。
- 如申請專利範圍第1至4項之其中任一項所記載之有機電晶體,其中前述無機障壁層係含有金屬氧化物及/或金屬氮化物。
- 如申請專利範圍第1至4項之其中任一項所記載之有機電晶體,其中前述無機障壁層之表面平均粗糙度係0.1~50nm。
- 如申請專利範圍第1至4項之其中任一項所記載之有機電晶體,其中前述無機障壁層之厚度係5~700nm。
- 一種有機電晶體之製造方法,係用以製造具有:配設於基板、一對之源極及汲極、前述源極及前述汲極間之有機半導體層;及介由閘極絕緣層配設於前述有機半導體層之閘極;之有機電晶體之方法,其特徵為:用以形成前述閘極絕緣層之製程係形成至少含有有機絕緣層及無機障壁層之積層構造。
- 如申請專利範圍第10項所記載之有機電晶體之製造方法,其中前述閘極絕緣層係依序積層前述有機絕緣層及前述無 機障壁層而形成。
- 如申請專利範圍第10項所記載之有機電晶體之製造方法,其中前述閘極絕緣層係依序積層第1層之前述有機絕緣層、前述無機障壁層、以及第2層之前述有機絕緣層而形成。
- 如申請專利範圍第10項所記載之有機電晶體之製造方法,其中前述閘極絕緣層係依序積層前述無機障壁層及前述有機絕緣層而形成。
- 如申請專利範圍第10至13項之其中任一項所記載之有機電晶體之製造方法,其中前述無機障壁層係將無機高分子材料塗佈於底層之層上,對前述無機高分子材料進行加熱處理、UV處理、或UV處理及臭氧處理之組合將其變換成無機材料而形成。
- 如申請專利範圍第14項所記載之有機電晶體之製造方法,其中前述無機高分子材料係金屬噁烷或聚矽胺烷。
- 如申請專利範圍第14項所記載之有機電晶體之製造方法,其中前述加熱處理係於400℃以下執行。
- 如申請專利範圍第10至13項之其中任一項所記載之有機電晶體之製造方法,其中利用真空處理使含有金屬氧化物及/或金屬氮化物之 前述無機障壁層形成於底層之層上。
- 如申請專利範圍第10至13項之其中任一項所記載之有機電晶體之製造方法,其中前述無機障壁層之形成表面平均粗糙度係0.1~50nm。
- 如申請專利範圍第10至13項之其中任一項所記載之有機電晶體之製造方法,其中前述無機障壁層之形成厚度係5~700nm。
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