TWI409874B - And a plasma processing apparatus for a plasma processing apparatus - Google Patents

And a plasma processing apparatus for a plasma processing apparatus Download PDF

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Publication number
TWI409874B
TWI409874B TW096129445A TW96129445A TWI409874B TW I409874 B TWI409874 B TW I409874B TW 096129445 A TW096129445 A TW 096129445A TW 96129445 A TW96129445 A TW 96129445A TW I409874 B TWI409874 B TW I409874B
Authority
TW
Taiwan
Prior art keywords
plasma
electrostatic chuck
dielectric layer
frequency power
electrode film
Prior art date
Application number
TW096129445A
Other languages
English (en)
Chinese (zh)
Other versions
TW200826186A (en
Inventor
Shoichiro Matsuyama
Shinji Himori
Atsushi Matsuura
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200826186A publication Critical patent/TW200826186A/zh
Application granted granted Critical
Publication of TWI409874B publication Critical patent/TWI409874B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW096129445A 2006-08-10 2007-08-09 And a plasma processing apparatus for a plasma processing apparatus TWI409874B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006217872A JP5125024B2 (ja) 2006-08-10 2006-08-10 プラズマ処理装置用の載置台及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
TW200826186A TW200826186A (en) 2008-06-16
TWI409874B true TWI409874B (zh) 2013-09-21

Family

ID=39085459

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096129445A TWI409874B (zh) 2006-08-10 2007-08-09 And a plasma processing apparatus for a plasma processing apparatus

Country Status (4)

Country Link
JP (1) JP5125024B2 (ko)
KR (1) KR100924845B1 (ko)
CN (1) CN100501965C (ko)
TW (1) TWI409874B (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4898718B2 (ja) * 2008-02-08 2012-03-21 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP5142914B2 (ja) * 2008-09-25 2013-02-13 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2010080717A (ja) * 2008-09-26 2010-04-08 Tokyo Electron Ltd プラズマ処理装置用の載置台
CN101740298B (zh) * 2008-11-07 2012-07-25 东京毅力科创株式会社 等离子体处理装置及其构成部件
JP5449750B2 (ja) * 2008-11-19 2014-03-19 株式会社日本セラテック 静電チャックおよびその製造方法
JP5186394B2 (ja) * 2009-01-06 2013-04-17 東京エレクトロン株式会社 載置台及びプラズマエッチング又はアッシング装置
CN104451586B (zh) * 2013-09-18 2017-02-08 北京北方微电子基地设备工艺研究中心有限责任公司 载台升降装置、反应腔室及等离子体加工设备
US10325800B2 (en) * 2014-08-26 2019-06-18 Applied Materials, Inc. High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials
JP5927260B2 (ja) * 2014-10-02 2016-06-01 東京エレクトロン株式会社 試料台及びマイクロ波プラズマ処理装置
JP6902409B2 (ja) * 2017-06-23 2021-07-14 東京エレクトロン株式会社 プラズマ処理装置
CN107675144A (zh) * 2017-09-15 2018-02-09 武汉华星光电技术有限公司 等离子体增强化学气相沉积装置
KR102656790B1 (ko) * 2018-11-21 2024-04-12 삼성전자주식회사 정전 척, 및 그를 포함하는 플라즈마 처리 장치
JP7134863B2 (ja) * 2018-12-27 2022-09-12 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP7340938B2 (ja) * 2019-02-25 2023-09-08 東京エレクトロン株式会社 載置台及び基板処理装置
CN112017936B (zh) * 2019-05-28 2024-05-31 东京毅力科创株式会社 等离子体处理装置
CN112863983B (zh) * 2019-11-28 2023-09-29 中微半导体设备(上海)股份有限公司 用于等离子体处理设备的下电极组件和等离子体处理设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US6483690B1 (en) * 2001-06-28 2002-11-19 Lam Research Corporation Ceramic electrostatic chuck assembly and method of making
US20050276928A1 (en) * 2003-02-03 2005-12-15 Octec Inc. Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3714248B2 (ja) * 1993-12-22 2005-11-09 東京エレクトロン株式会社 処理装置及び処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US6483690B1 (en) * 2001-06-28 2002-11-19 Lam Research Corporation Ceramic electrostatic chuck assembly and method of making
US20050276928A1 (en) * 2003-02-03 2005-12-15 Octec Inc. Plasma processing apparatus, electrode plate for plasma processing apparatus, and electrode plate manufacturing method

Also Published As

Publication number Publication date
KR100924845B1 (ko) 2009-11-02
JP5125024B2 (ja) 2013-01-23
JP2008042116A (ja) 2008-02-21
KR20080014671A (ko) 2008-02-14
TW200826186A (en) 2008-06-16
CN100501965C (zh) 2009-06-17
CN101123201A (zh) 2008-02-13

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