TWI405051B - Thinner composition for removing photosensitive resin - Google Patents
Thinner composition for removing photosensitive resin Download PDFInfo
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- TWI405051B TWI405051B TW094116294A TW94116294A TWI405051B TW I405051 B TWI405051 B TW I405051B TW 094116294 A TW094116294 A TW 094116294A TW 94116294 A TW94116294 A TW 94116294A TW I405051 B TWI405051 B TW I405051B
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- Prior art keywords
- photoresist
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- ether acetate
- acetate
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- 239000000203 mixture Substances 0.000 title claims abstract description 52
- 239000011347 resin Substances 0.000 title description 3
- 229920005989 resin Polymers 0.000 title description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- -1 alkyl amide Chemical class 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 16
- 239000003085 diluting agent Substances 0.000 claims description 27
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 6
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 5
- FUWDFGKRNIDKAE-UHFFFAOYSA-N 1-butoxypropan-2-yl acetate Chemical compound CCCCOCC(C)OC(C)=O FUWDFGKRNIDKAE-UHFFFAOYSA-N 0.000 claims description 2
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 claims description 2
- KVXNKFYSHAUJIA-UHFFFAOYSA-N acetic acid;ethoxyethane Chemical compound CC(O)=O.CCOCC KVXNKFYSHAUJIA-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 12
- 239000011521 glass Substances 0.000 abstract description 7
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 150000001346 alkyl aryl ethers Chemical class 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 231100000111 LD50 Toxicity 0.000 description 2
- 241000699666 Mus <mouse, genus> Species 0.000 description 2
- 241000699670 Mus sp. Species 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 2
- 229940011051 isopropyl acetate Drugs 0.000 description 2
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 231100000820 toxicity test Toxicity 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VPBZZPOGZPKYKX-UHFFFAOYSA-N 1,2-diethoxypropane Chemical compound CCOCC(C)OCC VPBZZPOGZPKYKX-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 description 1
- 206010074268 Reproductive toxicity Diseases 0.000 description 1
- 231100000176 abortion Toxicity 0.000 description 1
- 206010000210 abortion Diseases 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001605 fetal effect Effects 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 231100000636 lethal dose Toxicity 0.000 description 1
- 201000002364 leukopenia Diseases 0.000 description 1
- 231100001022 leukopenia Toxicity 0.000 description 1
- 230000002503 metabolic effect Effects 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 231100000372 reproductive toxicity Toxicity 0.000 description 1
- 230000007696 reproductive toxicity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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- C11D2111/22—
Abstract
Description
本發明係有關於一種用以去除光阻劑之稀釋劑組成物，更詳言之，係有關於一種用以去除光阻劑之稀釋劑組成物，不只在製造用於液晶顯示裝置之玻璃基板及半導體時，使用於晶圓之周緣及後面部位，可在短時間內有效率地去除附著之不必要的光阻劑，也適用於多樣之步驟中，特別適用於少旋(Spin－less)光阻劑製程，可使製造步驟簡便化，經濟地提高生產成品率。The present invention relates to a thinner composition for removing a photoresist, and more particularly to a thinner composition for removing a photoresist, not only for manufacturing a glass substrate for a liquid crystal display device. In the case of semiconductors, it can be used to remove unnecessary photoresists in a short period of time, and is also suitable for various steps, especially for spin-less. The photoresist process can simplify the manufacturing process and economically improve the production yield.
在半導體製造步驟中之微影成像(photo lithography)步驟係在晶圓上塗布光阻劑，轉印預先設計之圖案，並藉由沿著轉印之圖案適當地切削之蝕刻步驟，並藉此構成電子電路之作業，是非常重要的作業之一。The photolithography step in the semiconductor manufacturing step is to apply a photoresist on the wafer, transfer a pre-designed pattern, and perform an etching step by appropriately cutting along the transferred pattern, and thereby The operation of the electronic circuit is one of the most important tasks.
這種微影成像步驟，大略可以分成：(1)在晶圓表面上均一地塗布光阻劑之步驟；(2)蒸發塗布之光阻劑之溶劑，使光阻劑附著於晶圓表面之軟烤(soft baking)步驟；(3)利用紫外線等光源，依序反覆地縮小投影在遮罩上之電路圖案，使晶圓曝光以將遮罩之圖案轉印在晶圓上之曝光步驟；(4)以顯像液選擇性去除因暴露於光源之感光作用而出現如溶解度差等物理性質改變之部份的顯像步驟；(5)使在顯像作業後殘留於晶圓上之光阻劑更緊密地附著於晶圓上之硬烤(hard baking)步驟；(6)沿著業經顯像之晶圓之圖案，蝕刻預定部位之蝕刻步驟；及(7)在前述步驟後，去除不必要之光阻劑之剝離步驟。The lithography imaging step can be roughly divided into: (1) a step of uniformly applying a photoresist on the surface of the wafer; and (2) evaporating the solvent of the coated photoresist to adhere the photoresist to the surface of the wafer. a soft baking step; (3) using an ultraviolet light source or the like, sequentially reducing the circuit pattern projected on the mask, and exposing the wafer to transfer the pattern of the mask onto the wafer; (4) a developing step of selectively removing a portion of a physical property such as a poor solubility due to exposure to a light source by a developing solution; (5) a light remaining on the wafer after the developing operation a hard baking step in which the resist is more closely attached to the wafer; (6) an etching step of etching the predetermined portion along the pattern of the developed wafer; and (7) removing after the foregoing steps Unnecessary stripping step of photoresist.
在如上之微影成像步驟中之前述(2)之軟烤步驟後，必須有去除塗布於晶圓之邊緣及後面之不必要的光阻劑之作業。其原因是若晶圓之邊緣或後面存在有光阻劑時，將其存在而在蝕刻、注入離子等後續步驟中造成多種負面影響，且會有因此造成全體半導體裝置之回收率下降之問題。After the soft bake step of the above (2) in the lithography imaging step above, it is necessary to remove the unnecessary photoresist applied to the edges and behind the wafer. The reason for this is that if a photoresist is present at the edge or behind the wafer, it is present and causes various adverse effects in subsequent steps such as etching and implanting ions, and there is a problem that the recovery rate of the entire semiconductor device is lowered.
以往為去除存在於晶圓之邊緣或後面之光阻劑，主要是使用在晶圓邊緣部分之上下設有噴嘴，並透過前述噴嘴噴射有機成分構成之稀釋劑組成物之方法。In the past, in order to remove the photoresist existing on the edge of the wafer or behind, it is mainly a method in which a nozzle is provided below the edge portion of the wafer, and a thinner composition composed of an organic component is sprayed through the nozzle.
以往用以去除光阻劑之稀釋劑組成物，在如下之專利文獻1中揭示有以乙二醇乙醚、乙二醇乙醚乙酸酯、丙二醇乙醚、丙二醇乙醚乙酸酯等醚類及乙酸酯類、丙酮、丁酮、甲基異丁基酮、環己酮等酮類、乳酸甲酯、乳酸乙酯、甲基乙酸酯、乙基乙酸酯、丁基乙酸酯等酯類構成之稀釋劑組成物，與基板之主道部、連道部、背面部之不必要之光阻劑接觸並去除之方法。另外，如下之專利文獻2中揭示有使用丙二醇甲醚乙酸酯之方法，且如下之專利文獻3中揭示有使用烷氧丙酸烷酯作為稀釋劑組成物之方法。In the conventional diluent composition for removing a photoresist, the following Patent Document 1 discloses ethers and acetates such as ethylene glycol ethyl ether, ethylene glycol ethyl ether acetate, propylene glycol ethyl ether, and propylene glycol diethyl ether acetate. a ketone such as acetone, methyl ethyl ketone, methyl isobutyl ketone or cyclohexanone, an ester of methyl lactate, ethyl lactate, methyl acetate, ethyl acetate or butyl acetate. The diluent composition is in contact with and removed from unnecessary photoresists on the main track portion, the link portion, and the back portion of the substrate. Further, Patent Document 2 below discloses a method of using propylene glycol methyl ether acetate, and Patent Document 3 below discloses a method of using an alkyl alkoxypropionate as a diluent composition.
前述乙二醇乙醚乙酸酯，雖然溶解速度優異，但有揮發性及引燃性高，特別是有引起白血球減少症、引起胎兒流產等之生殖毒性之問題。另外，乳酸乙酯則因黏度高、溶解速度低，單獨使用無法得到充分之洗淨效果。The ethylene glycol ethyl ether acetate has excellent solubility and high volatility and ignitability, and particularly has problems of reproductive toxicity such as leukopenia and fetal abortion. In addition, ethyl lactate has a high viscosity and a low dissolution rate, and a sufficient cleaning effect cannot be obtained by using it alone.
因此，關於在製造用於液晶顯示裝置之玻璃基板及半導體時，使用於晶圓之周緣及後面部位，可在短時間內有效率地去除附著之不必要的光阻劑之稀釋劑組成物，實際上仍需要進一步研究。Therefore, when manufacturing a glass substrate and a semiconductor for a liquid crystal display device, it is used for the peripheral and rear portions of the wafer, and the thinner composition of the unnecessary photoresist can be efficiently removed in a short time. In fact, further research is still needed.
【專利文獻1】特開昭63－69563號公報【專利文獻2】特開平4－49938號公報【專利文獻3】特開平4－42523號公報[Patent Document 1] Japanese Laid-Open Patent Publication No. Hei-4-49938
為解決如上習知技術之問題點，本發明之目的係提供一種用以去除光阻劑之稀釋劑組成物，該稀釋劑組成物在製造用於液晶顯示裝置之玻璃基板及半導體時，使用於晶圓之周緣及後面部位，可在短時間內有效率地去除附著之不必要的光阻劑。In order to solve the problems of the above-mentioned prior art, an object of the present invention is to provide a thinner composition for removing a photoresist, which is used in the manufacture of a glass substrate and a semiconductor for a liquid crystal display device. The peripheral and rear parts of the wafer can efficiently remove the unnecessary photoresist in a short time.
本發明之另一目的係提供一種用以去除光阻劑之稀釋劑組成物，該稀釋劑組成物對人體的安全性高，使作業者更安全，適用於多種步驟，特別適用於少旋光阻劑製程，可提高液晶顯示裝置及半導體製造步驟之生產成品率。Another object of the present invention is to provide a thinner composition for removing a photoresist, which has high safety to the human body, is safer for the operator, and is suitable for various steps, and is particularly suitable for a small spin resistance. The process of the agent can improve the production yield of the liquid crystal display device and the semiconductor manufacturing steps.
為達成前述目的，本發明提供一種包含有(a)烷基醯胺及(b)乙酸烷酯之用以去除光阻劑之稀釋劑組成物。To achieve the foregoing object, the present invention provides a diluent composition for removing a photoresist comprising (a) an alkylguanamine and (b) an alkyl acetate.
較佳地，前述稀釋劑組成物包含有(a)前述烷基醯胺1至99重量份，及(b)前述乙酸烷酯1至80重量份。Preferably, the diluent composition comprises (a) 1 to 99 parts by weight of the aforementioned alkylguanamine, and (b) 1 to 80 parts by weight of the aforementioned alkyl acetate.
另外，本發明提供一種使用前述稀釋劑組成物之半導體元件或液晶顯示裝置之製造方法。Further, the present invention provides a semiconductor element using the above diluent composition or a method of manufacturing a liquid crystal display device.
另外，本發明提供一種包含(a)烷二醇單烷基醚乙酸酯、(b)烷基醯胺及(c)乙酸烷酯之用以去除光阻劑之稀釋劑組成物。Further, the present invention provides a diluent composition for removing a photoresist comprising (a) an alkylene glycol monoalkyl ether acetate, (b) an alkylguanamine, and (c) an alkyl acetate.
較佳地，前述稀釋劑組成物包含有(a)前述烷二醇單烷基醚乙酸酯1至80重量份、(b)前述烷基醯胺1至98重量份、及(c)前述乙酸烷酯者1至80重量份。Preferably, the diluent composition comprises (a) 1 to 80 parts by weight of the aforementioned alkane monoalkyl ether acetate, (b) 1 to 98 parts by weight of the alkylamine, and (c) The alkyl acetate is 1 to 80 parts by weight.
另外，本發明係提供一種使用前述稀釋劑組成物之半導體元件或液晶顯示裝置之製造方法。Further, the present invention provides a semiconductor element using the above diluent composition or a method of manufacturing a liquid crystal display device.
本發明之用以去除光阻劑之稀釋劑組成物，不只在製造用於液晶顯示裝置之玻璃基板及半導體時，使用於晶圓之周緣及後面部位，可在短時間內有效率地去除附著之不必要的光阻劑，也適用於多樣之製程中，特別適用於少旋光阻劑製程，可使液晶顯示裝置及半導體之製造步驟簡便化，具有可經濟地提高生產成品率之效果。另外，本發明之用以去除光阻劑之稀釋劑組成物，對於去除殘留於光阻劑噴射夾頭(chuck)，即光阻劑噴射用狹縫噴嘴(slit nozzle)上之光阻劑，亦有卓越之效果。The thinner composition for removing a photoresist of the present invention can be used to remove the adhesion in a short time, not only when manufacturing a glass substrate and a semiconductor for a liquid crystal display device, but also at the periphery and the rear portion of the wafer. The unnecessary photoresist is also suitable for various processes, and is particularly suitable for a small-rotation photoresist process, which can simplify the manufacturing steps of the liquid crystal display device and the semiconductor, and has the effect of economically improving the production yield. Further, the thinner composition for removing a photoresist of the present invention removes a photoresist which remains on a photoresist jet chuck, that is, a slit nozzle for a photoresist spray, There are also excellent results.
本發明之用以去除光阻劑之稀釋劑組成物的特徵是含有(a)烷基醯胺及(b)烷基乙酸。The diluent composition for removing a photoresist of the present invention is characterized by containing (a) an alkylguanamine and (b) an alkylacetic acid.
本發明所使用之烷基醯胺、烷基乙酸及烷二醇單烷基醚乙酸酯係可在稀釋劑組成物中作為溶劑使用，且可分別使用半導體級極為純粹者，並且可使用在VLSI級中以0.1μm水準濾過者。The alkylguanamine, alkylacetic acid and alkylene glycol monoalkyl ether acetate used in the present invention can be used as a solvent in a diluent composition, and can be used in a semiconductor grade, which is extremely pure, and can be used in The filter was filtered at a level of 0.1 μm in the VLSI stage.
本發明所使用之前述a)之烷基醯胺，可提高初期溶解速度，且發揮補足在用於液晶顯示裝置之玻璃基板及半導體製造步驟中所產生問題之作用。The alkylguanamine of the above a) used in the present invention can increase the initial dissolution rate and serve the problem of complementing the problems occurring in the glass substrate and semiconductor manufacturing steps for liquid crystal display devices.
前述烷基醯胺可使用N－甲基乙醯胺、二甲基甲醯胺、及二甲基乙醯胺等，特別是以二甲基乙醯胺為佳。As the alkylguanamine, N-methylacetamide, dimethylformamide, dimethylacetamide or the like can be used, and particularly dimethylacetamide is preferred.
前述烷基醯胺在稀釋劑組成物中宜含有1至99重量份，且其含量在前述範圍內時，可更增加揮發度及溶解力。The above alkylguanamine is preferably contained in the diluent composition in an amount of from 1 to 99 parts by weight, and when the content is within the above range, the volatility and the solvency are further increased.
本發明所使用之前述b)乙酸烷酯者，烷基之碳數宜為1~4，具體而言有乙酸甲酯、乙酸乙酯、乙酸異丙酯、乙酸正丙酯、及乙酸丁酯等。In the above b) alkyl acetate used in the present invention, the alkyl group preferably has a carbon number of 1 to 4, specifically methyl acetate, ethyl acetate, isopropyl acetate, n-propyl acetate, and butyl acetate. Wait.
又，前述乙酸烷酯中宜使用黏度相對較低且具有適當之揮發度之乙酸異丙酯、乙酸正丙酯、或乙酸丁酯。其中以乙酸丁酯最佳，且乙酸丁酯對於各種樹脂之溶解度皆優異，特別是不但表面張力低，且只要在稀釋劑組成物中添加預定之含量，即可發揮優異之界面特性。前述乙酸丁酯在毒性試驗中，對小鼠進行口腔投藥，顯示達50%致死量之LD5 0 (mouse)為7.0g/kg，物理性質為沸點126.1℃、燃點(以閉杯法測定)為23℃、黏度(25℃)為0.74cps、表面張力為25dyne/cm2 。Further, as the alkyl acetate, it is preferred to use isopropyl acetate, n-propyl acetate or butyl acetate having a relatively low viscosity and a suitable degree of volatility. Among them, butyl acetate is the most preferable, and butyl acetate is excellent in solubility for various resins, in particular, not only is the surface tension low, but also excellent interface characteristics can be exhibited by adding a predetermined content to the diluent composition. Butyl acetate in the toxicity test, mice were orally administered, 50% lethal dose of the display LD 5 0 (mouse) of 7.0g / kg, the physical properties of a boiling point of 126.1 deg.] C, flash point (measured in a closed cup) It was 23 ° C, the viscosity (25 ° C) was 0.74 cps, and the surface tension was 25 dyne/cm 2 .
前述乙酸烷酯在稀釋劑組成物中宜含有1至80重量份，其含量在前述範圍內時，由於具有適當之揮發度及溶解力，因此具有可有效地去除光阻劑之優點。The alkyl acetate is preferably contained in the diluent composition in an amount of from 1 to 80 parts by weight, and when the content is within the above range, it has an advantage of being effective in removing the photoresist because of having appropriate volatility and solubility.
另外，本發明之係提供一種用以去除光阻劑之稀釋劑組成物，包含有：(a)烷二醇單烷基醚乙酸酯、(b)烷基醯胺、及(c)乙酸烷酯，前述稀釋劑組成物，包含有：(a)烷二醇單烷基醚乙酸酯1至80重量份、(b)烷基醯胺1至98重量份、及(c)乙酸烷酯1至80重量份。Further, the present invention provides a diluent composition for removing a photoresist comprising: (a) an alkanediol monoalkyl ether acetate, (b) a alkylguanamine, and (c) acetic acid The alkyl ester, the foregoing diluent composition, comprising: (a) an alkanediol monoalkyl ether acetate from 1 to 80 parts by weight, (b) a alkylguanamine from 1 to 98 parts by weight, and (c) an alkyl acetate The ester is 1 to 80 parts by weight.
本發明中所使用之烷二醇單烷基醚乙酸酯，以使用烷基之碳數為1~5者為佳，具體而言如丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯、或丙二醇單丁醚乙酸酯等更佳，其中特別宜使用對高分子之溶解度優異之丙二醇單甲醚乙酸酯。The alkanediol monoalkyl ether acetate used in the present invention is preferably one having 5 to 5 carbon atoms, specifically, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate. Further, propylene glycol monopropyl ether acetate or propylene glycol monobutyl ether acetate is more preferable, and among them, propylene glycol monomethyl ether acetate excellent in solubility to a polymer is particularly preferably used.
前述丙二醇單甲醚乙酸酯在暴露於空氣中時對人體之安全性高，在物質代謝面上也由於會在人體中急速地分解成丙二醇與酒精，安全性高。另外，在毒性試驗中，對小鼠進行口腔投藥，顯示達50%致死量之LD5 0 (mouse)為8.5g/kg，會在加水分解之下急速分解。The propylene glycol monomethyl ether acetate has high safety to the human body when exposed to the air, and is rapidly decomposed into propylene glycol and alcohol in the human body on the metabolic surface of the substance, and has high safety. Further, in the toxicity test, mice are administered orally, the display of a lethal dose of the LD 50% 5 0 (mouse) of 8.5g / kg, will rapidly decompose under hydrolysis.
前述烷二醇單烷基醚乙酸酯在稀釋劑組成物中宜含有1至80重量份，其含量在前述範圍內時，由於具有適當之揮發度及溶解力，因此具有可有效地去除光阻劑之優點。The alkanediol monoalkyl ether acetate is preferably contained in the diluent composition in an amount of from 1 to 80 parts by weight, and when the content is within the above range, it has an effective volatility and a solvency, thereby effectively removing light. The advantages of the resist.
本發明中所使用之(b)烷基醯胺、及(c)乙酸烷酯，當然可使用與先前所述相同者。The (b) alkylguanamine, and (c) alkyl acetate used in the present invention can of course be used in the same manner as previously described.
再者，本發明係提供一種使用如前述之稀釋劑組成物之半導體元件或液晶顯示裝置之製造方法。Furthermore, the present invention provides a method of manufacturing a semiconductor element or a liquid crystal display device using the above-described diluent composition.
以如前述之成分構成之本發明之用以去除光阻劑之稀釋劑組成物，以滴下或通過噴嘴之噴灑方式去除產生於基板之邊緣及後面部位之不必要之光阻劑。The thinner composition for removing the photoresist of the present invention having the composition as described above is used to remove unnecessary photoresist which is generated at the edges and the rear portions of the substrate by spraying or by nozzle spraying.
前述用以去除光阻劑之稀釋劑組成物之滴下或噴射量，可依感光性樹脂之種類、膜厚來調節使用，特別宜在5~100cc/min之範圍內選擇使用。另外，本發明在噴射如前述之稀釋劑組成物之後，可經後續之微影成像步驟形成微細電路圖案。The dropping amount or the ejection amount of the diluent composition for removing the photoresist may be adjusted depending on the type and thickness of the photosensitive resin, and it is particularly preferable to use it in the range of 5 to 100 cc/min. Further, the present invention can form a fine circuit pattern through a subsequent lithography imaging step after ejecting the diluent composition as described above.
前述之用以去除光阻劑之稀釋劑組成物，及使用該用以去除光阻劑之稀釋劑組成物之半導體元件或液晶顯示裝置之製造方法，不只在製造用於液晶顯示裝置之玻璃基板及半導體時，使用於晶圓之周緣及後面部位，可在短時間內有效率地去除附著之不必要的光阻劑，也適用於多樣之步驟中，特別適用於少旋光阻劑製程，可使液晶顯示裝置及半導體之製造步驟簡便化，具有可經濟地提高生產成品率之效果。另外，本發明之用以去除光阻劑之稀釋劑組成物，對於去除殘留於光阻劑噴射夾頭，即光阻劑噴射用狹縫噴嘴)上之光阻劑，亦有卓越之效果。The above-described thinner composition for removing a photoresist, and a semiconductor element or a method for manufacturing a liquid crystal display device using the thinner composition for removing a photoresist, not only for manufacturing a glass substrate for a liquid crystal display device When used in semiconductors, it can be used to remove unnecessary photoresists in a short time in the periphery and behind the wafer. It is also suitable for various steps, especially for the less-rotating photoresist process. The manufacturing steps of the liquid crystal display device and the semiconductor are simplified, and the production yield can be economically improved. Further, the thinner composition for removing a photoresist of the present invention has an excellent effect for removing a photoresist which remains on a photoresist jet chuck, that is, a slit nozzle for photoresist spray.
為理解本發明，以下提出較佳之實施例，但如下之實施例只是單純之舉例，本發明之範圍並不因實施例而受到任何限制。The preferred embodiments are set forth below for the understanding of the invention, but the following examples are merely exemplary, and the scope of the invention is not limited by the embodiments.
製造n－丁基乙酸酯(n－buthyl acetate、nBA)70重量份及二甲基乙醯胺(dimethyl acetaamide、DMAc)30重量份均一混合之稀釋劑組成物。70 parts by weight of n-buthyl acetate (nBA) and 30 parts by weight of dimethyl acetaamide (DMAc) were mixed to form a diluent composition.
相對於前述實施例1，除使用如下表1所示之成分及組成比例外，實施與前述實施例1相同之方法製造稀釋劑組成物。這時，表1之單位為重量份。The diluent composition was produced in the same manner as in the above Example 1 except that the components and composition ratios shown in Table 1 below were used. At this time, the unit of Table 1 is parts by weight.
為了測定在前述實施例1至7，及比較例1至5中製造之稀釋劑組成物對於不必要之光阻劑之去除(Edge Bead Removing，EBR)程度，實施如下之EBR實驗，而以下之表4顯示其實驗結果。In order to determine the degree of unnecessary edge removal (EBR) of the diluent composition produced in the foregoing Examples 1 to 7, and Comparative Examples 1 to 5, the following EBR experiment was carried out, and the following Table 4 shows the results of the experiment.
首先，將直徑8吋之氧化矽基板以含有過氧化氫/硫酸混合物之2個浴(bath)洗淨(在各浴中分別浸漬5分鐘)之後，以超純水沖洗。該過程以訂製之洗淨設備進行。之後，該基板以旋轉乾燥器(SRD 1800－6，VERTEQ公司製)旋轉乾燥。之後，在基板之上部面，使用旋轉塗布器(BER TRACK，高麗半導體公司)覆蓋一定厚度之如下表2所示之各光阻劑。在前述旋轉塗布操作中，將30cc之光阻劑滴下於停止之基板中央。之後，使用旋轉塗布器以500rpm之速度使光阻劑散布13秒之後，將基板之旋轉速度加速至500~1000rpm左右，將光阻劑之厚度調整至預定厚度。此時，旋轉時間約為20~30秒。First, a ruthenium oxide substrate having a diameter of 8 Å was washed with two baths containing a hydrogen peroxide/sulfuric acid mixture (immersed in each bath for 5 minutes), and then rinsed with ultrapure water. This process is carried out with custom cleaning equipment. Thereafter, the substrate was spin-dried by a rotary dryer (SRD 1800-6, manufactured by VERTEQ Co., Ltd.). Thereafter, each of the photoresists shown in Table 2 below was deposited to a certain thickness on the upper surface of the substrate by using a spin coater (BER TRACK, Korea Semiconductor Co., Ltd.). In the aforementioned spin coating operation, 30 cc of the photoresist was dropped on the center of the stopped substrate. Thereafter, after the photoresist was spread at a speed of 500 rpm for 13 seconds using a spin coater, the rotation speed of the substrate was accelerated to about 500 to 1000 rpm, and the thickness of the photoresist was adjusted to a predetermined thickness. At this time, the rotation time is about 20 to 30 seconds.
對依前述方法準備之覆蓋有光阻劑之基板，噴射在實施例1至7、及比較例1至5中製造之稀釋劑組成物，依如下表3之條件去除光阻劑。此時，各稀釋劑組成物由裝置有壓力計之加壓槽(pressurizing vessel)供應，此時之加壓壓力為1.0kgf，從EBR噴嘴噴出之稀釋劑組成物之流量為10~20cc/min。The resist composition was sprayed on the substrate covered with the photoresist prepared in the above manner, and the photoresist compositions prepared in Examples 1 to 7 and Comparative Examples 1 to 5 were sprayed, and the photoresist was removed under the conditions shown in Table 3 below. At this time, each diluent composition is supplied from a pressurizing vessel equipped with a pressure gauge, and the pressurizing pressure at this time is 1.0 kgf, and the flow rate of the thinner composition ejected from the EBR nozzle is 10 to 20 cc/min. .
從如上之表4可確認，本發明之實施例1至7之稀釋劑組成物對於所有之光阻劑皆顯示有優異之EBR性能(EBR線均一性良好與否)，相反地，比較例1至5在對於抑制光阻劑之浸透現象方面，與實施例相比，其性能顯著降低。It can be confirmed from Table 4 above that the diluent compositions of Examples 1 to 7 of the present invention exhibit excellent EBR properties for all the photoresists (good EBR line uniformity or not), and conversely, Comparative Example 1 Up to 5, in terms of the phenomenon of suppressing the penetration of the photoresist, the performance was remarkably lowered as compared with the examples.
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| JP3978255B2 (en) * | 1997-06-24 | 2007-09-19 | Ａｚエレクトロニックマテリアルズ株式会社 | Lithographic cleaning agent |
| KR100271761B1 (en) * | 1997-11-21 | 2000-12-01 | 윤종용 | Manufacturing method of semiconductor device |
| KR100638243B1 (en) * | 2000-11-20 | 2006-10-24 | 주식회사 동진쎄미켐 | Thinner compositon for washing resist of lcd device |
| KR100569533B1 (en) * | 2001-10-25 | 2006-04-07 | 주식회사 하이닉스반도체 | Solution composition for removing a remaining photoresist resins |
| KR100843984B1 (en) * | 2002-02-22 | 2008-07-07 | 주식회사 동진쎄미켐 | Thinner composition for removing photosensitive resin |
-
2004
- 2004-05-25 KR KR1020040037385A patent/KR101142868B1/en active IP Right Grant
-
2005
- 2005-05-19 TW TW094116294A patent/TWI405051B/en not_active IP Right Cessation
- 2005-05-19 JP JP2005146572A patent/JP4669737B2/en not_active Expired - Fee Related
- 2005-05-25 CN CN2005100740420A patent/CN1702560B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07128867A (en) * | 1993-06-28 | 1995-05-19 | Tokyo Ohka Kogyo Co Ltd | Solvent for washing and removing resist and production of substrate for producing electronic parts with same |
| WO2003058350A1 (en) * | 2002-01-11 | 2003-07-17 | Clariant International Ltd. | A cleaning agent composition for a positive or a negative photoresist |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101142868B1 (en) | 2012-05-10 |
| CN1702560A (en) | 2005-11-30 |
| KR20050112333A (en) | 2005-11-30 |
| CN1702560B (en) | 2011-08-03 |
| JP4669737B2 (en) | 2011-04-13 |
| TW200604760A (en) | 2006-02-01 |
| JP2005338825A (en) | 2005-12-08 |
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| Date | Code | Title | Description |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |