KR20130016881A - Thinner composition for removing photosensitive resin or anti-reflective coating - Google Patents
Thinner composition for removing photosensitive resin or anti-reflective coating Download PDFInfo
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- KR20130016881A KR20130016881A KR1020110079065A KR20110079065A KR20130016881A KR 20130016881 A KR20130016881 A KR 20130016881A KR 1020110079065 A KR1020110079065 A KR 1020110079065A KR 20110079065 A KR20110079065 A KR 20110079065A KR 20130016881 A KR20130016881 A KR 20130016881A
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- thinner composition
- photoresist
- photosensitive resin
- thinner
- propylene glycol
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- 239000000203 mixture Substances 0.000 title claims abstract description 80
- 229920005989 resin Polymers 0.000 title claims abstract description 20
- 239000011347 resin Substances 0.000 title claims abstract description 20
- 239000006117 anti-reflective coating Substances 0.000 title abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 63
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims abstract description 22
- -1 propylene glycol alkyl ether Chemical class 0.000 claims abstract description 22
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims abstract description 16
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 claims abstract description 16
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229940116333 ethyl lactate Drugs 0.000 claims abstract description 8
- 239000004094 surface-active agent Substances 0.000 claims abstract description 6
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 claims abstract description 3
- SHQSVMDWKBRBGB-UHFFFAOYSA-N cyclobutanone Chemical compound O=C1CCC1 SHQSVMDWKBRBGB-UHFFFAOYSA-N 0.000 claims abstract description 3
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 claims abstract description 3
- 229940057867 methyl lactate Drugs 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 38
- 238000000576 coating method Methods 0.000 claims description 20
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000002265 prevention Effects 0.000 claims 1
- 150000002576 ketones Chemical class 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 48
- 239000010408 film Substances 0.000 description 41
- 239000000758 substrate Substances 0.000 description 21
- 239000011248 coating agent Substances 0.000 description 19
- 238000004090 dissolution Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000011342 resin composition Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 150000001241 acetals Chemical class 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/266—Esters or carbonates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- Chemical & Material Sciences (AREA)
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- Spectroscopy & Molecular Physics (AREA)
- Plasma & Fusion (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
The present invention relates to a thinner composition for removing a photosensitive resin or an anti-reflection film used in a semiconductor device and a thin film transistor liquid crystal display device manufacturing process.
More specifically, the present invention has excellent solubility and EBR characteristics for various photoresist and anti-reflective coating (BARC) and underlayer, and rework process and photoresist of wafer using photoresist The present invention relates to a thinner composition having excellent properties even in a step of pretreating the wafer surface in order to improve the coating performance.
The photolithography process of manufacturing a semiconductor device is a process of applying a photosensitive resin composition on a wafer, transferring a previously designed pattern, and composing an electronic circuit through an etching process appropriately according to the transferred pattern. This is one of the very important tasks.
The photolithography process includes (1) an application step of uniformly applying the photosensitive resin composition to the surface of the wafer, and (2) a soft baking step of evaporating the solvent from the coated photoresist film so that the photoresist film adheres to the surface of the wafer. (3) an exposure step of exposing the photoresist film by repeatedly and sequentially reducing and projecting the circuit pattern on the mask by using a light source such as ultraviolet ray, and (4) an exposure step of exposing the mask pattern onto the photoresist film, and (4) exposure to light sources. Development process for selectively removing parts having different physical properties such as difference in solubility using developer, (5) hard baking to more closely adhere the photoresist film remaining on the wafer to the wafer after development Process, (6) an etching process for etching a certain portion according to the developed photoresist pattern, and (7) an unnecessary feeling after the process. It goes to a separation step such as removing a film.
In the photolithography process, the photocoating film is supplied onto the wafer and the substrate is rotated to spread the surface evenly by centrifugal force, so that the photoresist film is gathered at the edge portion and the rear surface of the substrate due to the centrifugal force to form a small spherical material. The spherical material may be peeled off during transfer of the substrate after the baking process to cause particles in the apparatus, or may cause defocus during exposure. This unnecessary photosensitive material causes equipment contamination and lowers the yield in the manufacturing process of the semiconductor device. Therefore, spray nozzles are installed above and below the edge portion and the rear portion of the substrate, and the organic solvent component is formed at the edge portion and the rear portion through the nozzle. It is removed by spraying a thinner composition consisting of.
Factors that determine the performance of the thinner composition include dissolution rate and volatility. The dissolution rate of the thinner composition is very important because it determines how quickly and effectively the photosensitive resin can be dissolved and removed. Specifically, in the rinse of the edge portion, it may have a smooth processing cross section only if it has an appropriate dissolution rate, and if the dissolution rate is too high, a photoresist attack may appear in the rinse of the photoresist applied to the substrate. On the contrary, when the dissolution rate is too low, a partially dissolved photosensitive film tail flow phenomenon called tailing may appear in the rinse of the photosensitive film applied to the substrate. In particular, due to the large diameter of the substrate due to the high integration and high density of the semiconductor integrated circuit in recent years, in the rinsing process using the abandonment of the rotation speed it is inevitable to reduce the rotation speed (rpm). In such a rinse process, when the substrate does not have an appropriate dissolution rate in the rocking phenomenon of the substrate due to low rotation and the contact speed of the sprayed thinner composition, a bounding phenomenon occurs and the use of unnecessary thinner composition increases. Due to the large diameter of such a substrate, a strong dissolution rate of thinner is required in a low rotation rinse process more than a conventional high rotation rinse process.
In addition, the thinner composition is required to easily volatilize and remain on the surface of the substrate after removing the photosensitive resin. When the volatility is too low and the thinner composition does not volatilize, the remaining thinner itself may act as a contaminant in various processes, in particular, subsequent etching, and thus may act as a problem of lowering the yield of the semiconductor device. On the contrary, if the volatility is too high, the substrate may be rapidly cooled and the thickness variation of the applied photoresist film may be increased, and the volatilization may easily volatilize into the air during use, contaminating the cleanliness itself.
Currently, i-line photoresist, KrF, ArF, EUV, KrF antireflection film, ArF antireflection film, etc., which are used as photoresist in semiconductor lithography process, all have different main components. Therefore, it is necessary to control the composition content of the organic solvent in order to improve solubility and coatability of all of them.
Korean Patent Laid-Open Publication No. 2003-0095033 discloses a process of uniformly applying a photosensitive resin composition to a wafer before applying a photoresist to the wafer surface to evenly apply thinner to evenly apply a small amount of photoresist. Doing. However, even in this case, when the volatility of the thinner is high, the photoresist does not spread evenly, and when the volatility is too low, the photoresist is attacked by the remaining thinner during photoresist application.
Therefore, there is a need for a thinner composition which has excellent solubility in various photoresist films, lower antireflection films (BARCs), and underlayers, and has a suitable volatility, and shows excellent coating performance in applying photoresists.
SUMMARY OF THE INVENTION An object of the present invention is to provide a thinner composition having excellent solubility for various photoresist films, lower antireflection films (BARCs), and underlayers, and having an appropriate volatilization, which shows excellent coating performance in applying photoresists. It is to.
In order to achieve the above object, the present invention provides a thinner composition for removing a photosensitive resin or an anti-reflection film comprising propylene glycol alkyl ether, alkyl lactate and cycloketone.
The thinner composition for removing a photosensitive resin or an antireflective film according to the present invention may be used on the edge portion and the backside portion of a substrate used in a semiconductor device and a thin film transistor liquid crystal display device manufacturing method to efficiently remove unnecessary photoresist film in a short time. . The thinner composition for removing the photosensitive resin or the antireflective coating according to the present invention has excellent solubility and EBR characteristics for various photoresist and lower antireflection coating (BARC).
In particular, since it has excellent solubility and EBR characteristics with respect to EUV photoresist and underlayer, it can be used to remove photoresist and anti-reflection film used in semiconductor process with design rule of 20 nm or less.
In addition, it exhibits excellent characteristics when used in the rework process of the photoresist coated wafer, and also has excellent performance in the process of first applying the thinner composition to improve the coating performance of the photoresist before applying the photoresist.
In addition, the thinner composition of the present invention is not toxic to the human body, there is no discomfort due to the smell has high work stability, and has a low corrosive property. In addition, the thinner composition of the present invention can improve productivity without contamination of production equipment such as cup holders, clogging of discharge ports, or the like.
1 is a view showing a point evaluation of the coating uniformity according to the type of photoresist applied on the wafer.
Hereinafter, the configuration and operation of the present invention will be described in more detail.
The thinner composition of the present invention includes propylene glycol alkyl ether, alkyl lactate and cycloketone.
The thinner composition of the present invention preferably contains 1 to 30% by weight of propylene glycol alkyl ether, 10 to 70% by weight of alkyl lactate and 10 to 70% by weight of cycloketone. More preferably, the thinner composition of the present invention comprises 10 to 20% by weight of propylene glycol alkyl ether, 30 to 50% by weight of alkyl lactate and 30 to 50% by weight of cycloketone.
When the propylene glycol alkyl ether is included in the thinner composition of the present invention in less than 1% by weight, it is difficult to obtain the desired effect in the present invention, and when included in excess of 20% by weight, the solubility is reduced so that the RRC (reducing resist coating) effect is deteriorated. Not desirable
In addition, when the alkyl lactate is included in the thinner composition of the present invention in less than 10% by weight, it is difficult to obtain the desired effect in the present invention, and when included in excess of 70% by weight, the volatilization is dropped and EBR (edge bead removing) The tailing phenomenon of the photoresist occurs in the process, which is undesirable.
In addition, when the cycloketone is included in less than 10% by weight in the thinner composition of the present invention, the solubility in photoresist is poor in the present invention, reducing the RRC (reducing resist coating) effect. This is undesirable because of the tailing phenomenon of the photoresist in the EBR (edge bead removing) process.
In the propylene glycol alkyl ether, the alkyl group is preferably an alkyl group having 1 to 10 carbon atoms, more preferably one selected from the group consisting of propylene glycol monomethyl ether, propylene glycol monoethyl ether, and mixtures thereof. It is not necessarily limited thereto.
The alkyl lactate is preferably an alkyl group having 1 to 5 carbon atoms, more preferably one selected from the group consisting of methyl lactate, ethyl lactate, and mixtures thereof, but is not necessarily limited thereto.
The cycloketone is preferably an alkyl group having 1 to 10 carbon atoms, more preferably one selected from the group consisting of cyclobutanone, cyclohexanone, and mixtures thereof, but is not necessarily limited thereto.
The thinner composition of the present invention may further include a surfactant. The surfactant is preferably a fluorine series, nonionic series or ionic series surfactant. The surfactant is included in about 10 to 500 ppm by weight of the thinner composition of the present invention. If the above range is satisfied, the EBR characteristic is improved.
In addition, the thinner composition of the present invention can be used in the method of manufacturing a semiconductor device or a thin film transistor liquid crystal display device, characterized in that to remove unnecessary photosensitive film by spraying on the edge portion and the rear portion of the substrate to which the photosensitive resin composition is applied. At this time, the injection amount of the thinner composition is preferably 5 to 50 cc / min. Subsequently, the process may be manufactured by general techniques known in the art in the manufacture of semiconductor devices and thin film transistor liquid crystal display devices.
The thinner composition for removing the photosensitive resin or the anti-reflection film of the present invention can uniformly and in a short time remove unnecessary photoresist at the edge portion or the backside portion of the substrate caused by the large diameter of the substrate used in the manufacture of the semiconductor device.
In addition, the thinner composition of the present invention has excellent solubility in various photoresist films, lower antireflection films (BARC), and underlayers, and improves EBR characteristics, rework characteristics, and coating performance of photoresists. Can be. In particular, since the basic structure of the photosensitive resin constituting i-line, KrF, ArF, EUV photoresist is different, it is necessary to control the composition content of the organic solvent to improve solubility and coating property of all of them. The thinner composition of the invention satisfies this.
In addition, the thinner composition of the present invention has excellent solubility in the main components of the photoresist and the anti-reflection film having a high polarity structure, and thus, after the EBR process, the lower wafer cleaning process, and the pretreatment process on the upper wafer before the photoresist coating is finished. As a result, there is no contamination of the cup holder of the coater or clogging the discharge port, thereby improving productivity.
Hereinafter, the present invention will be described in more detail with reference to examples, but the scope of the present invention is not limited thereto.
Example 1 to 4 and Comparative example 1 ~ 8: photosensitive resin or Antireflection film For removal Thinner Preparation of the composition
Propylene glycol monomethyl ether (PGME), ethyl lactate (EL), and cyclohexanone (CHN) were added to the mixing tank provided with the stirrer at the composition ratio shown in Table 1, followed by stirring at 500 rpm for 1 hour at room temperature. To prepare a thinner composition for removing a photosensitive resin or an antireflection film.
* PGME: propylene glycol monomethyl ether
* EL: ethyl lactate
* CHN: cyclohexanone
* PGMEA: Propylene glycol monomethyl ether acetate
Test Example 1: for the photosensitive resin composition Thinner Unnecessary photoresist removal experiment of composition
After applying the photosensitive resin composition shown in Table 2 to a 4 inch silicon oxide substrate, the thinner compositions of Examples 1 to 4 and Comparative Examples 1 to 8 were applied to the edge portion under the conditions described in Table 3. An experiment was performed to remove unnecessary photoresist (Edge Bead Removing Experiment: hereinafter referred to as EBR experiment).
The thinner compositions of each of Examples 1 to 4 and Comparative Examples 1 to 8 were supplied from a pressure vessel equipped with a pressure gauge, and the pressure was 1 kgf, and the flow rate of the thinner composition from the EBR nozzle was 10 to 30 cc / min. . In addition, the removal performance of the unnecessary photosensitive film was evaluated using an optical microscope and a scanning electron microscope, and the results are shown in Table 4 below.
◎: EBR line uniformity for the photoresist film after EBR is constant
○: Good linear state with EBR line uniformity of 75% or more on the photoresist film after EBR
(Triangle | delta): The shape of the edge part after EBR was distorted by the thinner melt action.
X: Tailing phenomenon occurs at the edge film after EBR
Referring to Table 4, the thinner compositions of Examples 1 to 4 according to the present invention showed excellent EBR performance for all photoresist films. On the other hand, Comparative Examples 1 to 8 it can be seen that the removability is significantly lower than the thinner composition of the present invention according to Examples 1 to 4 in suppressing the penetration phenomenon to the photosensitive film. In particular, the thinner compositions of Examples 1 to 4 according to the present invention show excellent EBR performance with respect to PR for EUV and underlayer for EUV, whereas Comparative Examples 1 to 8 show a significant drop in EBR performance. The thinner composition of the present invention satisfies the EBR performance of many types of photoresist and lower antireflection film (BARC).
In addition, even when changing the rotational speed (rpm) conditions of the EBR was maintained equally good form. This means that the thinner composition according to the present invention is not only effective under specific conditions, but also exhibits the same performance under various conditions, and is more stable than the conventional thinner composition with respect to changes in process conditions.
Test Example 2: Photoresist Dissolution Rate Experiment by Type
Dissolution rates for the seven photoresists of Table 2 were tested using the thinner compositions of Examples 1-4 and Comparative Examples 1-8. After applying seven photoresists to a 6-inch silicon oxide substrate using a DRM device, the dissolution rate was measured while developing the entire surface in each thinner composition without exposing the wafer after the soft baking process. In the case of BARC-1, BARC-2, and underlayer, the dissolution rate was measured while developing the entire surface in each thinner composition without heat treatment after coating. The results are shown in Table 5 below.
(Double-circle): When melt rate is 700 nm / sec or more.
(Circle): When melt rate is less than 700 nm / sec from 400 nm / sec or more.
(Triangle | delta): When melt rate is less than 400 nm / sec in 100 nm / sec or more.
X: dissolution rate is 100 nm / sec or less
Test Example 3: Photoresist Evaluation of Coating Uniformity by Type
The coating uniformity for the seven photoresists of Table 2 was tested using the thinner compositions of Examples 1-4 and Comparative Examples 1-8. After the photoresist was applied on the 6-inch silicon oxide substrate according to the recipe shown in Table 6, a total of 8 spots in the shape of X and 1 inch and 2 inch distance from the center of the wafer and the center of the wafer, and 9 places in all (FIG. 1). Measurement) to see if the photoresist was uniformly applied. The results are shown in Table 7 below.
◎: when the standard deviation of the coating film thickness is 1% or less
○: when the standard deviation of the coating film thickness is 2% or less
(Triangle | delta): When the standard deviation of coating film thickness is 3% or less
X: Standard deviation of the coating film thickness is more than 3%
Test Example 4: Photoresist Depending on the type Rework ( rework Performance evaluation
The rework performance of the seven photoresists of Table 2 was tested using the thinner compositions of Examples 1-4 and Comparative Examples 1-8. According to the recipe shown in Table 8, after the seven photoresists were applied to the 6-inch silicon oxide substrate, the soft-baking process was completed, and the rework process was performed using each thinner composition. In the case of BARC-1, BARC-2, and underlayer, the rework process was performed using the respective thinner compositions without heat treatment after coating.
The surface state of the reworked silicon oxide substrate was evaluated using TOPCON's surface scan equipment (Model name: WM-1500). The results are shown in Table 9 below.
◎: When the number of silicon oxide surface particles reworked as a result of the surface scan is less than 1000
○: when the surface scan shows that the number of reworked silicon oxide surface particles is 1000 or more and less than 2000
(Triangle | delta): When the number of the silicon oxide surface particles reworked as a result of a surface scan is 2000 or more and less than 3000
X: Surface scan shows that the number of reworked silicon oxide surface particles is 3000 or more
Claims (9)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020110079065A KR20130016881A (en) | 2011-08-09 | 2011-08-09 | Thinner composition for removing photosensitive resin or anti-reflective coating |
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| KR1020110079065A KR20130016881A (en) | 2011-08-09 | 2011-08-09 | Thinner composition for removing photosensitive resin or anti-reflective coating |
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| KR20130016881A true KR20130016881A (en) | 2013-02-19 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170027014A (en) * | 2015-09-01 | 2017-03-09 | 동우 화인켐 주식회사 | Thinner composition |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170027014A (en) * | 2015-09-01 | 2017-03-09 | 동우 화인켐 주식회사 | Thinner composition |
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