CN1702560A - Diluent composition for removing light sensitive resin - Google Patents
Diluent composition for removing light sensitive resin Download PDFInfo
- Publication number
- CN1702560A CN1702560A CNA2005100740420A CN200510074042A CN1702560A CN 1702560 A CN1702560 A CN 1702560A CN A2005100740420 A CNA2005100740420 A CN A2005100740420A CN 200510074042 A CN200510074042 A CN 200510074042A CN 1702560 A CN1702560 A CN 1702560A
- Authority
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- China
- Prior art keywords
- acetate
- photoresist
- diluent composition
- weight portion
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000203 mixture Substances 0.000 title claims abstract description 57
- 239000003085 diluting agent Substances 0.000 title claims description 47
- 239000011347 resin Substances 0.000 title description 3
- 229920005989 resin Polymers 0.000 title description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 26
- -1 alkyl amide Chemical class 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 17
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 24
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 22
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 17
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 14
- 150000001346 alkyl aryl ethers Chemical class 0.000 claims description 11
- 125000002947 alkylene group Chemical group 0.000 claims description 11
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 11
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 9
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 9
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 8
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229940113088 dimethylacetamide Drugs 0.000 claims description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 claims description 3
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 claims description 2
- IPSOQTFPIWIGJT-UHFFFAOYSA-N acetic acid;1-propoxypropane Chemical compound CC(O)=O.CCCOCCC IPSOQTFPIWIGJT-UHFFFAOYSA-N 0.000 claims description 2
- KVXNKFYSHAUJIA-UHFFFAOYSA-N acetic acid;ethoxyethane Chemical compound CC(O)=O.CCOCC KVXNKFYSHAUJIA-UHFFFAOYSA-N 0.000 claims description 2
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 claims description 2
- 229940011051 isopropyl acetate Drugs 0.000 claims description 2
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 16
- 239000011521 glass Substances 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229960004063 propylene glycol Drugs 0.000 description 5
- 235000013772 propylene glycol Nutrition 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 231100000518 lethal Toxicity 0.000 description 2
- 230000001665 lethal effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000012749 thinning agent Substances 0.000 description 2
- 231100000820 toxicity test Toxicity 0.000 description 2
- 238000010023 transfer printing Methods 0.000 description 2
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- FTJSZJRZIKNLHY-UHFFFAOYSA-N CCCCC(O)=O.CCCOC(C)=O Chemical compound CCCCC(O)=O.CCCOC(C)=O FTJSZJRZIKNLHY-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 206010000210 abortion Diseases 0.000 description 1
- 231100000176 abortion Toxicity 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000001605 fetal effect Effects 0.000 description 1
- 231100000025 genetic toxicology Toxicity 0.000 description 1
- 230000001738 genotoxic effect Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 201000002364 leukopenia Diseases 0.000 description 1
- 231100001022 leukopenia Toxicity 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000004060 metabolic process Effects 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- LIXFRSRWZUCCTE-UHFFFAOYSA-N n,n-dimethylacetamide;2-methylpropanamide Chemical compound CC(C)C(N)=O.CN(C)C(C)=O LIXFRSRWZUCCTE-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Inorganic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
This invention provides a thinner composition for removing a photoresist, the composition which is used for a glass substrate to be used for a liquid crystal display and for the peripheral edge and the back face of a wafer to be used for the manufacture of a semiconductor so that a photoresist as unnecessary depositing can be efficiently removed in a short period of time. The thinner composition for removing a photoresist contains (a) alkyl amide and (b) alkyl ethanoate. Preferably, the thinner composition contains (a) 1 to 99 parts by weight of alkyl amide and (b) 1 to 80 parts by weight of alkyl ethanoate. In the method for manufacturing a semiconductor device or a liquid crystal display, the above thinner composition is used.
Description
Technical field
The present invention relates to photoresist removal diluent composition, specifically, the periphery and the back portion of used wafer when described composition is used for the employed glass substrate of liquid crystal display and makes semiconductor, can efficiently remove accompanying photoresist useless at short notice, and can be applicable to kinds of processes, especially non-rotating (spin-less) PR (photoresist) technology, but and simplified manufacturing technique, on economic benefit, boost productivity.
Background technology
Light lithography in semiconductor fabrication process (photo lithography) technology is at first photoresist to be coated on the wafer, the pattern that is designed in advance of transfer printing then, the pattern that obtains along transfer printing carries out suitable cutting, make circuit by such etching work procedure, this technology is one of very important operation.
This lithography technology can roughly be divided into:
1) in the step of wafer surface homogeneous photosensitive resin coating;
2) with the solvent evaporation in the photoresist of coating, make photoresist adhere to the slight baking step of wafer surface;
3) with light sources such as ultraviolet rays the circuit pattern on the mask is in turn made wafer exposure repeatedly when reducing projection, the pattern on the mask is made carbon copies step of exposure on the wafer;
4) use developer solution optionally remove by the sensitization that is exposed to light source form such as the different part of physical propertys such as different solubility, carry out development step;
5) after the development operation in order to strengthen the close attachment of photoresist and substrate residual on the wafer, carry out strong baking step;
6) pattern of the wafer after develop carries out etched etching step to the regulation position; And
7) after above-mentioned steps, the strip step that useless photoresist is removed etc.
In this imprint lithography, after above-mentioned (2) light stoving process, must remove the photoresist that mistake is applied to Waffer edge (edge) part and the back side, because if exist at Waffer edge (edge) part and the back side under the situation of photoresist and carry out etching, the existence of these photoresists brings harmful effect can for subsequent steps such as importing ion, also can bring the problem of the yield reduction that causes whole semiconductor equipment.
In the past in order to remove the photoresist that the Waffer edge (edge) and the back side exist, main adopt to spray in the arrangement up and down of Waffer edge part use nozzle, and the method for the thinning agent of from described nozzle, forming by organic solvent to edge and back side injection.
As the diluent composition that was used to remove photoresist in the past, following patent documentation 1 disclosed method is to use ether and ether acetate classes such as cellosolve, cellosolve acetate, propylene glycol, propylene-glycol ether acetate; Ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone; Ester classes such as methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, butyl acetate contact the useless photoresist of described thinning agent with the main stem portion that is attached to substrate, road portion of company, back as diluent composition, thereby with its removal.In addition, following patent documentation 2 proposes to use the method for propylene glycol methyl ether acetate as diluent composition, proposes to use the method for alkoxypropan acid alkyl ester as diluent composition in the patent documentation 3.
Under the situation of above-mentioned ethylene glycol monomethyl ether acetate, dissolution velocity is very fast, but volatile and inflammable, especially also has the problem of bringing out genotoxicities such as leukopenia disease, fetal abortion.In addition, ethyl lactate viscosity height, dissolution velocity are low, so there is the problem that can't fully clean when using separately.
Therefore, the truth decision must be developed a kind of periphery and back that is used for employed glass substrate of liquid crystal display and semiconductor manufacturing usefulness wafer, can efficiently remove the diluent composition of accompanying useless photoresist at short notice.
[patent documentation 1] spy opens clear 63-69563 number
[patent documentation 2] spy opens flat 4-49938 number
[patent documentation 3] spy opens flat 4-42523 number
Summary of the invention
For solving the problem of conventional art, the purpose of this invention is to provide photoresist and remove the diluent composition of usefulness, the periphery and the back portion of used wafer when it is used for employed glass substrate of liquid crystal display and semiconductor manufacturing, but in the short time accompanying photoresist useless is efficiently removed.
Another object of the present invention provides the diluent composition that photoresist is removed usefulness, it is to human safety height, safer for the operating personnel, can be applicable to kinds of processes, especially non-rotating (Spin-less) PR technology can be applicable to, and the throughput rate of liquid crystal display and semiconductor fabrication process can be improved.
Contain a) alkylamide in order to reach above-mentioned purpose, to the invention provides; And b) diluent composition that is used to remove photoresist of alkyl acetate.
Preferred above-mentioned diluent composition contains a) alkylamide 1～99 weight portion; And b) alkyl acetate 1～80 weight portion.
In addition, the invention provides the semiconductor element of the above-mentioned diluent composition of use and the manufacture method of liquid crystal display.
The invention provides and contain a) alkylene glycol monoalkyl ethers acetate; B) alkylamide; And c) photoresist of alkyl acetate is removed and is used diluent composition.
Preferred above-mentioned diluent composition contains a) alkylene glycol monoalkyl ethers acetate 1～80 weight portion; B) alkylamide 1～98 weight portion; And c) alkyl acetate 1～80 weight portion.
In addition, the invention provides the semiconductor element of the above-mentioned diluent composition of use and the manufacture method of liquid crystal display.
When photoresist provided by the invention is removed and is used for the employed substrate of liquid crystal display and semiconductor and makes with diluent composition during used wafer, not only accompanying photoresist useless efficiently can be removed in the short time, and to human safety height, safer for the operating personnel, can be applicable to kinds of processes, especially can be applicable to non-rotating (Spin-less) PR technology, can simplify liquid crystal display and semiconductor fabrication process, improve on the economic benefit and produce yield.In addition, photoresist of the present invention is removed and is residued in the PR injector head with diluent composition in removal, i.e. PR injection has remarkable effect when going up useless PR with narrow slit type nozzle (slit nozzle).
Embodiment
Below the present invention is described in detail.
Photoresist removal of the present invention is characterized as with diluent composition, contains a) alkylamide and b) alkyl acetate.
The alkylamide that uses among the present invention, alkyl acetate and alkylene glycol monoalkyl ethers acetate are used as solvent in diluent composition, can use the utmost point pure material of various semiconductor grade, and can use and filter the material that reaches 0.1 μ m level in the VLSI grade.
Above-mentioned a) the alkylamide that uses among the present invention can improve the initial stage dissolution velocity, solved the problem that takes place in the employed glass substrate and semiconductor fabrication process in the liquid crystal display.
The abovementioned alkyl acid amides can use N-methylacetamide, dimethyl formamide or dimethyl acetamide etc., especially preferred dimethyl acetamide.
The content of abovementioned alkyl acid amides preferably accounts for 1 weight portion～99 weight portions of diluent composition, and its content helps improving volatile grade and dissolving power in this scope the time.
The above-mentioned b that uses among the present invention) carbon number of alkyl acetate preferred alkyl is 1～4 alkyl acetate, and methyl acetate, ethyl acetate, isopropyl acetate, n-propyl acetate and butyl acetate etc. are arranged specifically.
Viscosity ratio is lower, volatile grade is moderate in the more preferably above-mentioned alkyl acetate isopropyl acetate, n-propyl acetate and butyl acetate.Butyl acetate most preferably, butyl acetate is functional for various dissolving resin, not only surface tension is low, even and the butyl acetate that in diluent composition, only adds specified amount also can bring into play its outstanding interfacial characteristics.The toxicity test result of above-mentioned butyl acetate is the oral 50% lethal quantity LD of mouse
50(mouse) be 7.0g/kg, the physical property mid-boiling point is that 126.1 ℃, burning-point (closed-cup formula method mensuration) are that 23 ℃, viscosity (25 ℃) are 25dyne/cm for 0.74cps, surface tension
2
The content of above-mentioned alkyl acetate preferably accounts for 1 weight portion～80 weight portions of diluent composition, and its content has suitable volatile grade and dissolving power in this scope the time, has the advantage that can effectively remove photoresist.
The invention provides and contain a) alkylene glycol monoalkyl ethers acetate, b) alkylamide and c) photoresist of alkyl acetate removes and to use diluent composition, described diluent composition to contain a) alkylene glycol monoalkyl ethers acetate 1 weight portion～80 weight portions; B) alkylamide 1 weight portion～98 weight portions; And c) alkyl acetate 1 weight portion～80 weight portions.
It is 1～5 alkylene glycol monoalkyl ethers acetate that above-mentioned a) the alkylene glycol monoalkyl ethers acetate that uses among the present invention preferably uses the carbon number of alkyl, propylene glycol monomethyl ether acetate, propylene glycol list ethylether acetate, propylene glycol list propyl ether acetate, propylene glycol single-butyl ether acetate etc. are better specifically, and especially preferred the use has remarkable solvent propylene glycol monomethyl ether acetate to macromolecule.
Above-mentioned propylene glycol monomethyl ether acetate is exposed in the air safe to human body, from the metabolism aspect, so can resolve into propylene glycol rapidly in human body and ethanol is also very safe.In the toxicity test, the oral 50% lethal quantity LD of mouse
50(mouse) be 8.5g/kg, and be decomposed rapidly because of hydrolysis.
Above-mentioned alkylene glycol monoalkyl ethers acetate preferably accounts for 1 weight portion～80 weight portions of diluent composition, and its content has suitable volatile grade and dissolving power in this scope the time, can more effective removal photoresist.
The b that uses among the present invention) alkylamide and c) alkyl acetate undoubtedly can use material same as described above.
The invention provides the semiconductor element of the above-mentioned diluent composition of use and the manufacture method of liquid crystal indicator.
The photoresist removal of the present invention that will contain mentioned component sprays with the mode of diluent composition by dropping or nozzle ejection, removes the useless photoresist of substrate edges and back portion.
Above-mentioned photoresist is removed and can be regulated according to the kind of photoresist, the thickness of film with the dripping quantity or the emitted dose of diluent composition, particularly preferably in selecting use in the scope of 5 ml/min～100 ml/min.In addition, the present invention can form the pattern of fine circuits through follow-up imprint lithography after spraying diluent composition as mentioned above.
The photoresist of the invention described above is removed with diluent composition with the method for the semiconductor element or the liquid crystal display of its manufacturing, not only can will be attached to the periphery of employed wafer in employed glass substrate in the liquid crystal display or the semiconductor manufacturing and the useless photoresist of back portion in the short time efficiently removes, and to the human safety height, safer for the operating personnel, can be applicable to kinds of processes, especially can be applicable to non-rotating (Spin-less) PR technology, can simplify liquid crystal display and semiconductor fabrication process, improve economically and produce productive rate.In addition, photoresist of the present invention is removed and is residued in the PR injector head with diluent composition in removal, i.e. PR injection has remarkable effect when going up useless PR with gap nozzle (slit nozzle).
Below, enumerate preferred embodiment with the better the present invention of understanding, but embodiment hereinafter is an example, and does not mean that scope of the present invention is only limited to following embodiment.
Embodiment
Embodiment 1
70 weight portion n-butyl acetates (n-buthyl acetate, nBA) and 30 weight portion dimethyl acetamides (dimethyl acetamide, DMAc) are evenly mixed, make diluent composition.
Embodiment 2～7, and comparative example 1～5
Except using the composition shown in the following table 1 and ratio of components, adopt the method manufacturing diluent composition identical in the foregoing description 1 with the foregoing description 1.The unit of table 1 is a weight portion.
[table 1]
| Classification | Embodiment | Comparative example | ||||||||||
| ??1 | ??2 | ??3 | ??4 | ??5 | ??6 | ??7 | ??1 | ??2 | ??3 | ??4 | ??5 | |
| ??nBA | ??70 | ??60 | ??40 | ??30 | ??20 | ??30 | ??45 | ??- | ??50 | ??30 | ??60 | ??80 |
| ??nPAc | ??- | ??- | ??- | ??- | ??- | ??- | ??- | ??- | ??50 | ??- | ??- | ??- |
| ??DMAc | ??30 | ??40 | ??10 | ??10 | ??10 | ??20 | ??10 | ??- | ??- | ??- | ??- | ??- |
| ??PGMEA | ??- | ??- | ??50 | ??60 | ??70 | ??50 | ??45 | ??50 | ??- | ??10 | ??- | ??10 |
| ??PGME | ??- | ??- | ??- | ??- | ??- | ??- | ??- | ??50 | ??- | ??60 | ??40 | ??10 |
| [notes] nBA: n-butyl acetate (n-buthyl acetate) nPAc: n-propyl acetate (n-propyl acetate) DMAc: dimethylacetylamide (dimethyl acetamide) PGMEA: propylene glycol monomethyl ether acetate (propyleneglycol monomethyl ether acetate) PGME: propylene glycol monomethyl ether (propyleneglycol monomethyl ether) | ||||||||||||
Made diluent composition carries out following EBR experiment to removal (Edge Bead Removing, the EBR) degree of useless photoresist in the foregoing description 1～7 and the comparative example 1～5 in order to measure, and its result is as shown in table 4 below.
At first, in respectively containing 2 baths (bath) of hydrogen peroxide/sulfuric acid potpourri be after 8 inches monox substrate is cleaned (soaking 5 minutes in each bath) with diameter, rinse with ultrapure water and wash.This process is carried out in the cleaning equipment of customization.Then, these substrates are rotated drying in rotary drier (SRD 1800-6, VERTEQ society).Afterwards, use rotation lining device (EBRTRACK, コ リ ヨ semiconductor society) that the upper face that the various photoresists shown in the following table 2 are overlayed on substrate is formed certain thickness.In the above-mentioned rotation lining operation 10 milliliters of photoresists are dropped in the substrate center that stops.After 3 seconds photoresist being distributed in substrate with rotation lining device with the speed of 500rpm then, make substrate each photoresist is adjusted to the thickness of regulation with the rotational speed acceleration of about 500rpm～1000rpm.At this moment, rotational time be about 20 seconds～30 seconds.
On the substrate of the photoresist of preparing as described above that is covered, spray the made diluent composition of the foregoing description 1～7 and comparative example 1～5 respectively, remove photoresist in the condition of following table 3.At this moment, each diluent composition is supplied with by being furnished with the manometric pressure cylinder (pressurizingvessel) that adds, and the moulding pressure of this moment is 1.0kgf, and the flow of the diluent composition that sprays in the EBR nozzle is 10 ml/min～20 ml/min.
[table 2]
| Classification | The composition kind | The composition product name | The thickness of film (μ m) |
| Photoresist | Eurymeric | ??DTFR-2000 | ?1.5 |
| G-line type eurymeric | ??DNR-H100PL | ?4 | |
| Organic EL PI | ??DL-1003 | ?1.5 | |
| ArF uses | ??DHA-TG2 | ?2 |
[table 3]
| Classification | Rotational speed (rpm) | Time (second) |
| (dispense) condition of distribution | ??300 | ??3 |
| Spin coating | Thickness according to photoresist is regulated | |
| The EBR condition | ??400 | ??7 |
| ??500 | ??7 | |
| ??500 | ??10 | |
[table 4]
| Classification | The EBR condition | Embodiment | Comparative example | ||||||||||
| ??1 | ??2 | ??3 | ??4 | ??5 | ??6 | ??7 | ??1 | ??2 | ??3 | ??4 | ??5 | ||
| Eurymeric | 400rpm7 second | ??○ | ??◎ | ??○ | ??○ | ??○ | ??○ | ??◎ | ??△ | ??× | ??× | ??△ | ??× |
| 500rpm7 second | ??◎ | ??◎ | ??○ | ??○ | ??○ | ??○ | ??◎ | ??△ | ??× | ??△ | ??△ | ??△ | |
| 500rpm10 second | ??◎ | ??◎ | ??○ | ??○ | ??○ | ??○ | ??◎ | ??△ | ??× | ??△ | ??△ | ??△ | |
| G-line type minus | 400rpm7 second | ??○ | ??◎ | ??○ | ??○ | ??○ | ??○ | ??◎ | ??△ | ??× | ??× | ??△ | ??× |
| 500rpm7 second | ??◎ | ??◎ | ??○ | ??○ | ??○ | ??○ | ??◎ | ??△ | ??× | ??× | ??△ | ??△ | |
| 500rpm10 second | ??◎ | ??◎ | ??○ | ??○ | ??○ | ??○ | ??◎ | ??△ | ??× | ??△ | ??△ | ??△ | |
| Organic EL type PI | 400rpm7 second | ??○ | ??◎ | ??○ | ??○ | ??○ | ??○ | ??◎ | ??△ | ??× | ??× | ??△ | ??× |
| 500rpm7 second | ??◎ | ??◎ | ??○ | ??○ | ??○ | ??○ | ??◎ | ??△ | ??× | ??× | ??△ | ??× | |
| 500rpm10 second | ??◎ | ??◎ | ??○ | ??○ | ??○ | ??○ | ??◎ | ??△ | ??× | ??△ | ??△ | ??△ | |
| ArF uses | 400rpm7 second | ??○ | ??◎ | ??○ | ??○ | ??○ | ??○ | ??◎ | ??△ | ??× | ??× | ??△ | ??× |
| 500rpm7 second | ??◎ | ??◎ | ??○ | ??○ | ??○ | ??○ | ??◎ | ??△ | ??× | ??× | ??△ | ??× | |
| 500rpm10 second | ??◎ | ??◎ | ??○ | ??○ | ??○ | ??○ | ??◎ | ??△ | ??× | ??△ | ??△ | ??△ | |
| [notes] ◎: behind the EBR, EBR line homogeneity for photoresist keeps certain zero: behind the EBR, for the EBR line homogeneity of photoresist more than or equal to 80%, good linear state △: behind the EBR, for the EBR line homogeneity of photoresist more than or equal to 50%, good linear state *: behind the EBR, for the EBR line lack of uniformity 50% of photoresist, the photoresist of edge has conditions of streaking to take place | |||||||||||||
From last table 4 as can be known, composition for all photoresist embodiments of the invention 1～7 has outstanding ERB performance (whether ERB line excellent in uniform), also learns on the contrary, for the infiltration rejection of photoresist, compare with embodiment, the performance of comparative example 1～5 obviously reduces.
Claims (9)
1. photoresist is removed and is used diluent composition, and it contains a) alkylamide; And b) alkyl acetate.
2. photoresist as claimed in claim 1 is removed and is used diluent composition, and it contains a) alkylamide of 1 weight portion～99 weight portions; And 1 weight portion～80 weight portion b) alkyl acetate.
3. photoresist as claimed in claim 1 is removed and is used diluent composition, it is characterized in that, described a) alkylamide is to be selected from the group of being made up of N-methylacetamide, dimethyl formamide and dimethyl acetamide one or more.
4. photoresist as claimed in claim 1 is removed and is used diluent composition, it is characterized in that described b) alkyl acetate is that to be selected from carbon number by alkyl be in the group formed of 1～4 methyl acetate, ethyl acetate, isopropyl acetate, n-propyl acetate and butyl acetate one or more.
5. the manufacture method of semiconductor element or liquid crystal display is characterized in that, uses any described photoresist of claim 1～4 to remove and uses diluent composition.
6. photoresist is removed and is used diluent composition, and it contains a) alkylene glycol monoalkyl ethers acetate; B) alkylamide; And c) alkyl acetate.
7. photoresist as claimed in claim 6 is removed and is used diluent composition, and it contains a) alkylene glycol monoalkyl ethers acetate of 1 weight portion～80 weight portions; 1 weight portion～98 weight portion b) alkylamide; And 1 weight portion～80 weight portion c) alkyl acetate.
8. photoresist as claimed in claim 6 is removed and is used diluent composition, it is characterized in that described alkylene glycol monoalkyl ethers acetate a) is to be selected from the group of being made up of propylene glycol monomethyl ether acetate, propylene glycol list ethylether acetate, propylene glycol list propyl ether acetate and propylene glycol single-butyl ether acetate one or more.
9. the manufacture method of semiconductor element or liquid crystal display is characterized by, and uses any described photoresist removal diluent composition in the claim 6～8.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2004-0037385 | 2004-05-25 | ||
| KR1020040037385A KR101142868B1 (en) | 2004-05-25 | 2004-05-25 | Thinner composition for removing photosensitive resin |
| KR1020040037385 | 2004-05-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1702560A true CN1702560A (en) | 2005-11-30 |
| CN1702560B CN1702560B (en) | 2011-08-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005100740420A Expired - Fee Related CN1702560B (en) | 2004-05-25 | 2005-05-25 | Diluent composition for removing photosensitive resin |
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| Country | Link |
|---|---|
| JP (1) | JP4669737B2 (en) |
| KR (1) | KR101142868B1 (en) |
| CN (1) | CN1702560B (en) |
| TW (1) | TWI405051B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106773562A (en) * | 2016-12-23 | 2017-05-31 | 昆山艾森半导体材料有限公司 | A kind of removal AZ photoresists remove glue |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200641560A (en) * | 2005-02-09 | 2006-12-01 | Showa Denko Kk | Photosensitive composition removing liquid |
| US8021490B2 (en) | 2007-01-04 | 2011-09-20 | Eastman Chemical Company | Substrate cleaning processes through the use of solvents and systems |
| WO2014104192A1 (en) * | 2012-12-27 | 2014-07-03 | 富士フイルム株式会社 | Resist-removing liquid and resist-stripping method |
| KR102445582B1 (en) * | 2016-02-11 | 2022-09-22 | 주식회사 이엔에프테크놀로지 | Thinner composition for removing color resist |
| JP7208568B2 (en) | 2019-09-24 | 2023-01-19 | ダイキン工業株式会社 | Welding body |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3248781B2 (en) * | 1993-06-28 | 2002-01-21 | 東京応化工業株式会社 | Solvent for removing and cleaning resist and method for producing base material for producing electronic parts using the same |
| JP3978255B2 (en) * | 1997-06-24 | 2007-09-19 | Ａｚエレクトロニックマテリアルズ株式会社 | Lithographic cleaning agent |
| KR100271761B1 (en) * | 1997-11-21 | 2000-12-01 | 윤종용 | Manufacturing method of semiconductor device |
| KR100638243B1 (en) * | 2000-11-20 | 2006-10-24 | 주식회사 동진쎄미켐 | Thinner compositon for washing resist of lcd device |
| KR100569533B1 (en) * | 2001-10-25 | 2006-04-07 | 주식회사 하이닉스반도체 | Solution composition for removing a remaining photoresist resins |
| US7172996B2 (en) * | 2002-01-11 | 2007-02-06 | Az Electronic Materials Usa Corp. | Cleaning agent composition for a positive or a negative photoresist |
| KR100843984B1 (en) * | 2002-02-22 | 2008-07-07 | 주식회사 동진쎄미켐 | Thinner composition for removing photosensitive resin |
-
2004
- 2004-05-25 KR KR1020040037385A patent/KR101142868B1/en active IP Right Grant
-
2005
- 2005-05-19 JP JP2005146572A patent/JP4669737B2/en not_active Expired - Fee Related
- 2005-05-19 TW TW094116294A patent/TWI405051B/en not_active IP Right Cessation
- 2005-05-25 CN CN2005100740420A patent/CN1702560B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106773562A (en) * | 2016-12-23 | 2017-05-31 | 昆山艾森半导体材料有限公司 | A kind of removal AZ photoresists remove glue |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4669737B2 (en) | 2011-04-13 |
| JP2005338825A (en) | 2005-12-08 |
| CN1702560B (en) | 2011-08-03 |
| KR101142868B1 (en) | 2012-05-10 |
| TW200604760A (en) | 2006-02-01 |
| TWI405051B (en) | 2013-08-11 |
| KR20050112333A (en) | 2005-11-30 |
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