CN1603962A - Thinner composition for removing photoresist - Google Patents
Thinner composition for removing photoresist Download PDFInfo
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- CN1603962A CN1603962A CNA2004100807394A CN200410080739A CN1603962A CN 1603962 A CN1603962 A CN 1603962A CN A2004100807394 A CNA2004100807394 A CN A2004100807394A CN 200410080739 A CN200410080739 A CN 200410080739A CN 1603962 A CN1603962 A CN 1603962A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Detergent Compositions (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
To provide a thinner composition for removing a photoresist to efficiently remove an unnecessary photoresist in a short period of time which is deposited on edges and back faces of a glass substrate to be used for a liquid crystal display device or of a wafer to be used for manufacturing a semiconductor.The thinner composition for removing a photoresist contains (a) propyleneglycol monoalkylether acetate, (b) alkyl ethanoate and (c) alkyl lactate. The thinner obtained by using the above thinner composition efficiently removes in a short period of time an unnecessary photoresist deposited on edges and back faces of a glass substrate to be used for a liquid crystal display device or of a wafer to be used for manufacturing a semiconductor.
Description
Technical field
The present invention relates to be used to remove the diluent composition of photosensitive resin, specifically, the present invention relates to be used to remove the diluent composition of photosensitive resin, it not only can remove photosensitive resin at short notice effectively, and to the human safety height, can be fit to kinds of processes, can simplify liquid crystal display and semiconductor fabrication process, produce yield thereby can improve at economic aspect.Described photosensitive resin be on the glass substrate that in liquid crystal display, uses and the semiconductor manufacturing in the edge of the silicon chip that uses and the unnecessary photosensitive resin that back portion adheres to.
Background technology
In the semiconductor fabrication process, photoetching (photo lithography) operation is one of very important operation, and it is coated with photosensitive resin on silicon chip, duplicate the pattern of design in advance, suitably accept or reject according to the pattern that duplicates,, constitute electronic loop by such etching work procedure.
Such photo-mask process can roughly be divided into as inferior operation.
(1) painting process evenly is coated with photosensitive resin at silicon chip surface;
(2) soft baking operation is evaporated solvent from the photosensitive resin of coating, photosensitive resin is attached to silicon chip surface;
(3) exposure process utilizes light sources such as ultraviolet ray, in repeatedly to the circuit design on mask reduced projection successively, silicon chip is exposed, and the pattern of mask is copied on the silicon chip;
(4) video picture operation uses imaging liquid optionally to remove because of exposing the different part of the physical property that causes in light source sensitization etc. to the open air, as the part of different solubility;
(5) hard baking operation makes the photosensitive resin that remains on the silicon chip after the video picture operation more closely anchor on the silicon chip;
(6) etching work procedure carries out etching to established part, gives electrical characteristics with the silicon chip pattern according to video picture; And
(7) stripping process is removed photosensitive resin unnecessary after the above-mentioned operation.
In this photo-mask process, behind described (2) soft baking operation, must remove the unnecessary photosensitive resin that is coated with on the silicon chip edge part and the back side, this be because, under the situation that has photosensitive resin at the edge or the back side of silicon chip, because the existence of these photosensitive resins may produce various bad phenomenon in subsequent handlings such as etching, ion injections, the problem of thereupon having brought whole semiconductor device yield to descend.
In order to remove the photosensitive resin that the silicon chip edge and the back side exist, the main in the past method that adopts is the upper and lower settings nozzle in the silicon chip edge part, by described nozzle the edge and the back side is sprayed the thinning agent that contains the organic solvent composition.
In the past, have reported in literature to know clearly and remove the method for used photosensitive resin, it is with ether and ether acetic acid ester classes such as cellosolve, cellosolve acetate, propylene glycol, propylene glycol acetic acid esters; Ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone; Ester classes such as methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, butyl acetate are as diluent composition, make main part, the marginal portion of described thinning agent contact substrate, the unnecessary photosensitive resin of back portion, and with its removal.
In addition, Japan's bulletin patent gazette discloses the method that methyl proxitol acetate is used for diluent composition flat 4-49938 number, and Japanese publication communique relates to diluent composition flat 4-42523 number, discloses the method for using the alkyl alkoxy propionic ester.
In above-mentioned, under the situation of using ethylene glycol monomethyl ether acetate, particularly there are the problem that causes genotoxicities such as leukopenia and fetal abortion in dissolution velocity excellence, but volatility and inflammability height.In addition, ethyl lactate is because viscosity height and dissolution velocity is slow can not get sufficient cleaning performance when using separately, and the flash-point of acetone, methyl ethyl ketone equal solvent is low, exists processing safety significantly to descend the degradation problem.
So, but the situation of reality be necessary further to effectively remove in the short time attached on the glass substrate that uses in the liquid crystal display and the diluent composition of the unnecessary photosensitive resin on silicon chip edge that uses in the semiconductor manufacturing and the back portion study.
Summary of the invention
In order to solve above-mentioned prior art problems, the invention provides the diluent composition that is used to remove photosensitive resin, it is effectively removed in can the short time attached on the glass substrate that uses in the liquid crystal display and the silicon chip edge that uses in making of semiconductor and the unnecessary photosensitive resin on the back portion.
Another object of the present invention provides the diluent composition that is used to remove photosensitive resin, and it is safer concerning the operator to the human safety height, can be fit to kinds of processes, can improve the production efficiency of liquid crystal display and semiconductor manufacturing process.
In order to achieve the above object, the invention provides the diluent composition that is used to remove photosensitive resin, it contains:
A) propylene-glycol monoalky lether acetic acid esters;
B) alkyl acetate; With
C) lactic acid alkyl ester.
Preferred described diluent composition contains:
A) 1～70 weight portion propylene-glycol monoalky lether acetic acid esters;
B) 10～90 weight portion alkyl acetates; With
C) 1～10 weight portion lactic acid alkyl ester.
In addition, the invention provides the diluent composition that is used to remove photosensitive resin, it contains:
A) propylene-glycol monoalky lether acetic acid esters;
B) alkyl acetate;
C) lactic acid alkyl ester; With
D) polyoxyethylene class condensation product.
Preferred described diluent composition contains:
A) 1～70 weight portion propylene-glycol monoalky lether acetic acid esters;
B) 10～90 weight portion alkyl acetates;
C) 1～10 weight portion lactic acid alkyl ester;
D) 0.001～1 weight portion polyoxyethylene class condensation product.
In addition, the invention provides the diluent composition that is used to remove photosensitive resin, it contains:
A) propylene-glycol monoalky lether acetic acid esters;
B) alkyl acetate;
C) lactic acid alkyl ester; With
E) fluoropropenes acid copolymer.
Preferred described diluent composition contains:
A) 1～70 weight portion propylene-glycol monoalky lether acetic acid esters;
B) 10～90 weight portion alkyl acetates;
C) 1～10 weight portion lactic acid alkyl ester; With
E) 0.001～0.1 weight portion fluoropropenes acid copolymer.
In addition, the invention provides the diluent composition that is used to remove photosensitive resin, it contains:
A) propylene-glycol monoalky lether acetic acid esters;
B) alkyl acetate;
C) lactic acid alkyl ester;
D) polyoxyethylene class condensation product; With
E) fluoropropenes acid copolymer.
Preferred described diluent composition contains:
A) 1～70 weight portion propylene-glycol monoalky lether acetic acid esters;
B) 10～90 weight portion alkyl acetates;
C) 1～10 weight portion lactic acid alkyl ester;
D) 0.001～1 weight portion polyoxyethylene class condensation product; With
E) 0.001～0.1 weight portion fluoropropenes acid copolymer.
The inventor etc. studied harmless repeatedly and can the short time in effectively remove the diluent composition of photosensitive resin, find in the research, use propylene-glycol monoalky lether acetic acid esters, alkyl acetate and lactic acid alkyl ester to prepare diluent composition, not only can effectively remove in the short time attached on the glass substrate that uses in the liquid crystal display and the silicon chip edge that uses in making of semiconductor and the unnecessary photosensitive resin on the back portion; And to the human safety height, can be fit to kinds of processes, can simplify liquid crystal display and semiconductor fabrication process, produce yield thereby can improve at economic aspect.Based on this point, finished the present invention.
Embodiment
Describe the present invention below in detail.
The feature that is used to remove the diluent composition of photosensitive resin of the present invention is to contain a) propylene-glycol monoalky lether acetic acid esters, b) alkyl acetate and c) lactic acid alkyl ester.
Used described propylene-glycol monoalky lether acetic acid esters, alkyl acetate and lactic acid alkyl ester among the present invention, can use to can be used as extremely pure material solvent, each semiconductor grade in the diluent composition, also can use material through the VLSI grade of 0.1 μ m horizontal filtering.
The alkyl of used described a) propylene-glycol monoalky lether acetic acid esters can be that carbon number is 1～5 alkyl among the present invention, specifically can use propylene glycol monomethyl ether, propylene glycol list ethylether acetic acid esters, propylene glycol list propyl ether acetic acid esters or propylene glycol single-butyl ether acetic acid esters etc., the preferred especially propylene glycol monomethyl ether of using high molecular solubleness excellence.
During described propylene glycol monomethyl ether exposed to air, safe to human body, even also be safe aspect metabolism, in human body, resolved into propylene glycol and ethanol apace.In addition, in toxicity test, to the mouse oral administration, the LD50 (mouse) that represents 50% lethal quantity is 8.5g/kg, and because of hydrolysis decomposition rapidly.Its physical property is as follows: boiling point is that 146 ℃, flash-point (measuring in the closed-cup mode) are that 42 ℃, viscosity (25 ℃) are that 1.17cps, surface tension are 26 dynes/cm.
Relative 100 parts by weight diluent compositions preferably contain the described propylene-glycol monoalky lether acetic acid esters of 1～70 weight portion, and the advantage that its content has in described scope the time is, have suitable volatility and dissolving power, can effectively remove photosensitive resin.
The described b that uses among the present invention) carbon number of alkyl acetate preferred alkyl is 1～4, and methyl acetate, ethyl acetate, isopropyl acetate, n-propyl acetate or butyl acetate etc. are specifically arranged.
In addition, preferably use viscosity lower and suitable volatile isopropyl acetate, n-propyl acetate or butyl acetate arranged as described alkyl acetate.Butyl acetate most preferably.Butyl acetate is all good to various dissolving resin degree, and particularly not only surface tension is little, even and in diluent composition, only add the content of regulation, also can bring into play excellent interfacial characteristics.For described butyl acetate, in the toxicity test,, represent the LD of 50% lethal quantity to the mouse oral administration
50(mouse) is 7.0g/kg, and its physical property is as follows, and boiling point is that 126.1 ℃, flash-point (measuring in the closed-cup mode) are that 23 ℃, viscosity (25 ℃) are 0.74cps, and surface tension is 25 dynes/cm.
Relative 100 parts by weight diluent compositions preferably contain the described alkyl acetate of 10～90 mass parts, and the advantage that its content has in described scope the time is, have suitable volatility and dissolving power, can effectively remove photosensitive resin.
The described c that uses among the present invention) lactic acid alkyl ester can use methyl lactate, ethyl lactate or butyl lactate etc.
Particularly described ethyl lactate is safe to human body, and U.S. food and FAD (FDA) also use ethyl lactate in food additives.For described ethyl lactate, in toxicity test,, represent the LD of 50% lethal quantity to the mouse oral administration
50(mouse) is 5.0g/kg, even also is safe aspect metabolism, resolves into lactic acid and ethanol in human body rapidly.Its physical property is as follows: boiling point is that 156 ℃, flash-point (measuring in the closed-cup mode) are that 52 ℃, viscosity (25 ℃) are that 2.38cps, surface tension are that 34 dynes/cm, solubility parameter are 10.
Compare with other solvents, described lactic acid alkyl ester is big to the solubleness of the emulsion composition of photosensitive resin, and relative 100 parts by weight diluent compositions preferably contain the described lactic acid alkyl ester of 1～10 weight portion.Its content can reduce viscosity in described scope the time, during as thinning agent, has the effect that can bring into play excellent specific property.
In addition, the diluent composition that is used for removing photosensitive resin of the present invention can append and contain d) polyoxyethylene class condensation product.
Described polyoxyethylene class condensation product plays a role as nonionic surfactant in diluent composition, and dissolubility excellence in water and all kinds of solvents when thinning agent contacts with photosensitive resin, reduces the tomography on the interface effectively.
Described polyoxyethylene class condensation product preferably contains condensation product, and described condensation product makes that to have carbon number be that the alkyl phenol of 6～12 straight or branched alkyl produces with 5～25 moles ethylene oxide condensation of relative 1 mole of described alkyl phenol.As the alkyl substituent in described such compound, the dodecylphenol of the nonylphenol that per 1 mole of polymerized propylene, diisobutylene, octene or nonene derive and the nonylphenol of 9.5 moles of ethylene oxide condensations, per 1 moles of phenol and about 12 moles ethylene oxide condensation or diisooctyl phenol of per 1 moles of phenol and about 15 moles of ethylene oxide condensations etc. are arranged.
Relative 100 parts by weight diluent compositions, preferably contain the described polyoxyethylene class of 0.001～1 weight portion condensation product, its content has following advantage when described scope, promptly sustainable volatility and the cleansing power of keeping the thinning agent of substrate end, and do not produce foam, use easily.
In addition, the diluent composition that is used for removing photosensitive resin of the present invention can also append and contain e) the fluoropropenes acid copolymer.
The dissolubility excellence of described fluoropropenes acid copolymer in water and all kinds of solvents.
It is 3000～10000 material that described fluoropropenes acid copolymer preferably uses weight-average molecular weight, and the material that preferably has following physical property, described physical property is: flash-point (measuring to open a glass mode) is that 200 ℃, proportion are that 1.10g/mL (25 ℃), viscosity (20 ℃) are that 2100 centistokes (cst), surface tension (ethyl lactate shape) are 24.0mN/m (Wilhermy method).In addition, the preferred diluted mixture of described fluoropropenes acid copolymer is used in ethyl lactate.
Diluent composition preferably contains the described fluoropropenes acid polymer of 0.001～0.1 weight portion relatively.Its content has the advantage of reduction to the dynamic surface tension on the interface of photosensitive resin, removal effect excellence when described scope.
By dripping or, can remove the unnecessary photosensitive resin that is created in substrate edge and back portion by the diluent composition that is used to remove photosensitive resin of the present invention that mentioned component constitutes in the mode of nozzle ejection.
In addition, can be according to the kind of used photoresist, the thickness of film, regulate described dropping or the emitted dose that is used to remove the diluent composition of photosensitive resin and use, preferably in 5～100cc/ minute scope, select to use.Among the present invention, spray described such diluent composition after, through follow-up photo-mask process, can form fine circuit design.
Described such advantage that is used to remove the diluent composition of photosensitive resin of the present invention is, it not only can remove photosensitive resin at short notice, and to the human safety height, concerning the operator, can be fit to kinds of processes, can simplify liquid crystal display and semiconductor fabrication process, thereby can improve produce yield at economic aspect, the photosensitive resin of described removal is the edge of the silicon chip that uses in the glass substrate that uses in liquid crystal display and the semiconductor manufacturing and the unnecessary photosensitive resin that back portion adheres to.
Below, in order to understand the present invention, provide preferred embodiment, but following embodiment being an example of the present invention, the scope of the invention is not limited to following embodiment.
[embodiment]
Embodiment 1
Evenly mix 10 weight portion propylene glycol list ethylether acetic acid esters (PGMEA), 80 weight portion butyl acetates (NBA), 10 weight portion ethyl lactates (EL), make diluent composition.
Embodiment 2～5, comparative example 1～4
In described embodiment 1, using, adopt with the same method of described embodiment 1 and implement, make diluent composition by composition shown in the following table 1 and ratio of components.At this moment, the unit in the table 1 is a weight portion.
Table 1
| Distinguish | Embodiment | Comparative example | |||||||
| ??1 | ??2 | ??3 | ??4 | ??5 | ????1 | ????2 | ??3 | ????4 | |
| PGME A | ??10 | ??20 | ??25 | ??25 | ??25 | ????- | ????- | ??10 | ????- |
| PGME | ??- | ??- | ??- | ??- | ??- | ????50 | ????60 | ??70 | ????- |
| NBA | ??80 | ??70 | ??70 | ??70 | ??70 | ????50 | ????- | ??- | ????20 |
| EL | ??10 | ??10 | ??5 | ??5 | ??5 | ????- | ????10 | ??- | ????10 |
| Acetone | ??- | ??- | ??- | ??- | ??- | ????- | ????30 | ??20 | ????70 |
| SUR.1 | ??- | ??- | ??0.1 | ??- | ??0.1 | ????- | ????- | ??- | ????- |
| SUR.2 | ??- | ??- | ??- | ??0.01 | ??0.01 | ????- | ????- | ??- | ????- |
| Annotate PGMEA: propane diols list ethylether acetic acid esters PGME: dihydroxypropane single-ether NBA: butyl acetate EL: ethyl lactate SUR.1: polyethylene glycol oxide class condensation product SUR.2: fluoropropenes acid copolymer | |||||||||
In order to measure diluent composition that described embodiment 1～5 and comparative example 1～4 make removal degree to unnecessary photosensitive resin, implement EBR experiment as described below, it the results are shown in following table 4.
At first, in 2 baths that contain hydrogen peroxide and sulfuric acid mixture, be after 8 inches monox substrate is cleaned (each bathed dipping 5 minutes) with diameter, the ultrapure water washing.This process is carried out with the cleaning equipment of customization.After this, with spin-drier (product of VERTEQ society, model: SRD1800-6), these substrates are rotated drying.Then, with rotation coating machine (EBR TRACK, Koryo semiconductor society), apply each photosensitive resin shown in the certain thickness following table 2 at the upper surface of substrate.In the above-mentioned coating operation, the 10cc photosensitive resin is added drop-wise to static substrate center.After this, with 500rpm, 3 seconds condition, photosensitive resin is scatter, substrate is quickened, each photosensitive resin is adjusted to the thickness of regulation with the rotational speed of about 2000～4000rpm with the rotation coating machine.The rotational time of this moment is about 20～30 seconds.
Respectively the substrate that is coated with photosensitive resin of above-mentioned preparation is sprayed the diluent composition of described embodiment 1～5 and comparative example 1～4 manufacturing, remove photosensitive resin by the condition of following table 3.At this moment, use and the manometric pressure cylinder that adds to be housed to supply with each diluent composition, at this moment, moulding pressure is 1.0kgf, is 10～20cc/ minute from the flow of the diluent composition of EBR nozzle ejection.
Table 2
| Distinguish | The composition kind | The composition product name | Thickness (μ m) |
| Photosensitive resin | Positive | ??DTFR-2000 | ??1.5 |
| G-line style positive | ??DNR-H100PL | ??4 | |
| Organic EL PI | ??DL-1003 | ??1.5 |
Table 3
| Distinguish | Rotational speed (rpm) | Time (second) |
| Distributive condition | 500 | ??3 |
| Spin coating | Thickness according to photosensitive resin is regulated | |
| The EBR condition | 400 | ??7 |
| 400 | ??10 | |
| 500 | ??7 | |
| 500 | ??10 | |
Table 4
| Distinguish | The EBR condition | Embodiment | Comparative example | |||||||
| 1 | ?2 | 3 | 4 | 5 | 1 | 2 | 3 | 4 | ||
| Positive | 400rpm 7 seconds | ○ | ?○ | ◎ | ◎ | ◎ | × | × | × | × |
| 500rpm 7 seconds | ○ | ?○ | ◎ | ◎ | ◎ | △ | △ | △ | × | |
| 500rpm 10 seconds | ○ | ?○ | ◎ | ◎ | ◎ | △ | △ | △ | △ | |
| The g-line style is anti-phase | 400rpm 7 seconds | ○ | ?○ | ◎ | ◎ | ◎ | × | × | × | × |
| 500rpm 7 seconds | ○ | ?○ | ◎ | ◎ | ◎ | △ | △ | △ | × | |
| 500rpm 10 seconds | ○ | ?○ | ◎ | ◎ | ◎ | △ | △ | △ | △ | |
| Organic EL type PI | 400rpm 7 seconds | ○ | ?○ | ◎ | ◎ | ◎ | × | × | × | × |
| 500rpm 7 seconds | ○ | ?○ | ◎ | ◎ | ◎ | △ | △ | △ | × | |
| 500rpm 10 seconds | ○ | ?○ | ◎ | ◎ | ◎ | △ | △ | △ | △ | |
| Annotate ◎: the EBR line uniformity constant zero of photosensitive resin behind the EBR: the EBR line uniformity of photosensitive resin is good linear state △ more than or equal to 80% behind the EBR: behind the EBR EBR line uniformity of photosensitive resin more than or equal to 50% be good linear state *: the EBR line uniformity of photosensitive resin is less than the conditions of streaking that photosensitive resin takes place on 50% marginal portion behind the EBR | ||||||||||
By table 4 as can be known, the diluent compositions of embodiments of the invention 1～5 etc. all show excellent EBR performance (whether EBR line homogeneity is good) to photosensitive resin, particularly use polyoxyethylene class condensation product, fluoropropenes acid copolymer, perhaps mix under the situation of the embodiment 3～5 that uses both, show more excellent EBR performance, hence one can see that, and diluent composition of the present invention is removed the excellent performance of photosensitive resin.
On the contrary, the comparative example 1～4 that does not contain propylene-glycol monoalky lether acetic acid esters, alkyl acetate and lactic acid alkyl ester has suppressed the phenomenon of soaking into to photosensitive resin, waits with embodiment and compares, and performance obviously reduces.
The diluent composition that is used to remove photosensitive resin of the present invention, it not only can remove photosensitive resin at short notice effectively, and to the human safety height, concerning the operator, can be fit to kinds of processes, can simplify liquid crystal display and semiconductor fabrication process, produce yield thereby can improve at economic aspect.The photosensitive resin of described removal be the glass substrate that in liquid crystal display, uses and the semiconductor manufacturing in the edge of the silicon chip that uses and the unnecessary photosensitive resin that back portion adheres to.
Claims (14)
1, be used to remove the diluent composition of photosensitive resin, it contains:
A) propylene-glycol monoalky lether acetic acid esters;
B) alkyl acetate; With
C) lactic acid alkyl ester.
2, the diluent composition that is used to remove photosensitive resin as claimed in claim 1, it contains:
A) 1～70 weight portion propylene-glycol monoalky lether acetic acid esters;
B) 10～90 weight portion alkyl acetates; With
C) 1～10 weight portion lactic acid alkyl ester.
3, the diluent composition that is used to remove photosensitive resin as claimed in claim 1, wherein, the carbon number of described propylene-glycol monoalky lether acetic acid esters use alkyl is 1～5 propylene-glycol monoalky lether acetic acid esters.
4, the diluent composition that is used to remove photosensitive resin as claimed in claim 1, wherein, described propylene-glycol monoalky lether acetic acid esters is to be selected from least a in the group of being made up of propylene glycol monomethyl ether, propylene glycol list ethylether acetic acid esters, propylene glycol list propyl ether acetic acid esters and propylene glycol single-butyl ether acetic acid esters.
5, the diluent composition that is used to remove photosensitive resin as claimed in claim 1, wherein, described alkyl acetate is that the carbon number that is selected from least a alkyl in the group of being made up of methyl acetate, ethyl acetate, isopropyl acetate, n-propyl acetate and butyl acetate is 1～4 alkyl acetate.
6, the diluent composition that is used to remove photosensitive resin as claimed in claim 1, wherein, described lactic acid alkyl ester is at least a lactic acid alkyl ester that is selected from the group of being made up of methyl lactate, ethyl lactate and butyl lactate.
7, be used to remove the diluent composition of photosensitive resin, it contains:
A) propylene-glycol monoalky lether acetic acid esters;
B) alkyl acetate;
C) lactic acid alkyl ester; With
D) polyoxyethylene class condensation product.
8, the diluent composition that is used to remove photosensitive resin as claimed in claim 7, it contains:
A) 1～70 weight portion propylene-glycol monoalky lether acetic acid esters;
B) 10～90 weight portion alkyl acetates;
C) 1～10 weight portion lactic acid alkyl ester;
D) 0.001～1 weight portion polyoxyethylene class condensation product.
9, the diluent composition that is used to remove photosensitive resin as claimed in claim 7, wherein, described polyoxyethylene class condensation product is that to have carbon number be the alkyl phenol of 6～12 straight or branched alkyl and the condensation product of 5～25 moles ethylene oxide condensation of relative 1 mole of described alkyl phenol.
10, be used to remove the diluent composition of photosensitive resin, it contains:
A) propylene-glycol monoalky lether acetic acid esters;
B) alkyl acetate;
C) lactic acid alkyl ester;
E) fluoropropenes acid copolymer.
11, the diluent composition that is used to remove photosensitive resin as claimed in claim 10, it contains:
A) 1～70 weight portion propylene-glycol monoalky lether acetic acid esters;
B) 10～90 weight portion alkyl acetates;
C) 1～10 weight portion lactic acid alkyl ester;
E) 0.001～1 weight portion fluoropropenes acid copolymer.
12, the diluent composition that is used to remove photosensitive resin as claimed in claim 10, the weight-average molecular weight of described fluoropropenes acid copolymer is 3000～10000.
13, be used to remove the diluent composition of photosensitive resin, it contains:
A) propylene-glycol monoalky lether acetic acid esters;
B) alkyl acetate;
C) lactic acid alkyl ester;
D) polyoxyethylene class condensation product; With
E) fluoropropenes acid copolymer.
14, the diluent composition that is used to remove photosensitive resin as claimed in claim 13, it contains:
A) 1～70 weight portion propylene-glycol monoalky lether acetic acid esters;
B) 10～90 weight portion alkyl acetates;
C) 1～10 weight portion lactic acid alkyl ester;
D) 0.001～1 weight portion polyoxyethylene class condensation product; With
E) 0.001～0.1 weight portion fluoropropenes acid copolymer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030068652 | 2003-10-02 | ||
| KR1020030068652A KR20050032719A (en) | 2003-10-02 | 2003-10-02 | A thinner composition for removing photosensitive resin |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1603962A true CN1603962A (en) | 2005-04-06 |
| CN100545756C CN100545756C (en) | 2009-09-30 |
Family
ID=34545541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100807394A Active CN100545756C (en) | 2003-10-02 | 2004-10-08 | Be used to remove the diluent composition of photosensitive resin |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4391376B2 (en) |
| KR (1) | KR20050032719A (en) |
| CN (1) | CN100545756C (en) |
| TW (1) | TW200519549A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1987663B (en) * | 2005-12-23 | 2010-12-01 | 新应材股份有限公司 | Light resistance washing agent |
| CN102709175A (en) * | 2012-05-23 | 2012-10-03 | 上海宏力半导体制造有限公司 | Forming method of photoresist layer in deep groove process |
| CN103019050A (en) * | 2011-09-22 | 2013-04-03 | 三星电子株式会社 | Diluent composition for RRC process and EBR process, and apparatus for supplying the same |
| CN106527066A (en) * | 2015-08-31 | 2017-03-22 | 安集微电子科技(上海)有限公司 | Photoresist residue cleaning fluid |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4626978B2 (en) * | 2004-03-03 | 2011-02-09 | ダイセル化学工業株式会社 | Lithographic cleaning agent and rinsing liquid |
| US8021490B2 (en) | 2007-01-04 | 2011-09-20 | Eastman Chemical Company | Substrate cleaning processes through the use of solvents and systems |
| KR101741839B1 (en) | 2010-10-15 | 2017-05-30 | 동우 화인켐 주식회사 | Cleaning Composition for removing photosensitive resin |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3248781B2 (en) * | 1993-06-28 | 2002-01-21 | 東京応化工業株式会社 | Solvent for removing and cleaning resist and method for producing base material for producing electronic parts using the same |
| JP3525309B2 (en) * | 1995-04-05 | 2004-05-10 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | Cleaning liquid and cleaning method |
| KR100308422B1 (en) * | 1999-04-15 | 2001-09-26 | 주식회사 동진쎄미켐 | Thinner composition for removing spin-on-glass coating and photosensitive resin |
| KR100594815B1 (en) * | 1999-12-24 | 2006-07-03 | 삼성전자주식회사 | thinner for rinsing photoresist and method of treating photoresist layer |
| JP2001188359A (en) * | 1999-12-28 | 2001-07-10 | Mitsubishi Gas Chem Co Inc | Edge bead remover |
| JP2003324052A (en) * | 2002-04-30 | 2003-11-14 | Tokyo Electron Ltd | Method and device for removing coating film |
-
2003
- 2003-10-02 KR KR1020030068652A patent/KR20050032719A/en active Search and Examination
-
2004
- 2004-09-29 TW TW093129489A patent/TW200519549A/en unknown
- 2004-09-30 JP JP2004288845A patent/JP4391376B2/en active Active
- 2004-10-08 CN CNB2004100807394A patent/CN100545756C/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1987663B (en) * | 2005-12-23 | 2010-12-01 | 新应材股份有限公司 | Light resistance washing agent |
| CN103019050A (en) * | 2011-09-22 | 2013-04-03 | 三星电子株式会社 | Diluent composition for RRC process and EBR process, and apparatus for supplying the same |
| CN102709175A (en) * | 2012-05-23 | 2012-10-03 | 上海宏力半导体制造有限公司 | Forming method of photoresist layer in deep groove process |
| CN102709175B (en) * | 2012-05-23 | 2016-06-01 | 上海华虹宏力半导体制造有限公司 | The forming method of photoresist layer in deep trench processes |
| CN106527066A (en) * | 2015-08-31 | 2017-03-22 | 安集微电子科技(上海)有限公司 | Photoresist residue cleaning fluid |
| CN106527066B (en) * | 2015-08-31 | 2021-04-30 | 安集微电子科技（上海）股份有限公司 | Photoresist residue cleaning solution |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100545756C (en) | 2009-09-30 |
| JP4391376B2 (en) | 2009-12-24 |
| TW200519549A (en) | 2005-06-16 |
| JP2005115373A (en) | 2005-04-28 |
| KR20050032719A (en) | 2005-04-08 |
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