CN101300529A - Thinner composition for removing photoresist - Google Patents
Thinner composition for removing photoresist Download PDFInfo
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- CN101300529A CN101300529A CNA2006800410620A CN200680041062A CN101300529A CN 101300529 A CN101300529 A CN 101300529A CN A2006800410620 A CNA2006800410620 A CN A2006800410620A CN 200680041062 A CN200680041062 A CN 200680041062A CN 101300529 A CN101300529 A CN 101300529A
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- diluent composition
- photoresist
- described diluent
- acrylic copolymer
- organic solvent
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/264—Aldehydes; Ketones; Acetals or ketals
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Materials For Photolithography (AREA)
Abstract
The present invention relates to a thinner composition for removing a photoresist used in the preparation of a semiconductor device, a liquid crystal display or an organic light emitting device, and more particularly, to a thinner composition for removing a photoresist comprising a glycol ether compound, particularly a fluorinated acrylic copolymer as a surfactant, an organic solvent or a mixture thereof. The thinner composition for removing photoresist of the present invention can effectively remove the unnecessary photoresist at the edge and the back of the glass substrate for organic EL and those used for manufacturing liquid crystal display in a short time regardless of the specific photoresist used.
Description
Technical field
The present invention relates to a kind of diluent composition that is used to remove photoresist, and particularly, relate to a kind of can be at short notice the edge of the wafer in the glass substrate from the preparation technology who is used in LCD and the preparation that is used in semiconductor devices and the diluent composition that unwanted photoresist is removed at the back side effectively, and this diluent composition can be used for kinds of processes, and can reduce cost, simplify preparation technology and improve output.
Background technology
TFT-array approach in the preparation of Thin Film Transistor-LCD (TFT-LCD) is similar with the photolithographic silicon semiconductor preparation method of employing.Photoetching process is a kind of with photoresist film light mask pattern and the etch substrate method with the electron gain circuit that is coated on the substrate, transcribes and develops.
In order to prepare TFT-LCD, need on substrate, form the TFT-array by photoetching process.In the method, the permeable interface of advancing photoresist of diluent composition, this causes producing some defectives in the technology subsequently that for example etching or ion inject, and total production can reduce.
The reason that diluent composition defocuses in the infiltration at the interface of photoresist becomes exposure process after baking process, and reduced the output of TFT-LCD.
In addition, should consider thinning agent from economy and validity angle simultaneously.Diluent composition if only consider validity with correlation technique is used for wafer, and the problem of existence is, because the component difference of photoresist, it can make the edge clean (edge bead removal, EBR) mis-behave.
Especially, with the circular edges of the silicon wafer of applying centrifugal force along different, the edge of the glass substrate of TFT-LCD is square, therefore can not remove photoresist by rotation EBR.And, since glass substrate be fix and injection nozzle move along four edge straight lines of glass substrate, so even will be after the photoresist at edge is removed, the slow evaporation after the photoresist coating also can cause the infiltration in the interface of photoresist.This has produced the obvious contrast with rotation EBR, in rotation EBR, if the silicon wafer high speed rotating, even if could prevent of the infiltration of a spot of volatile thinner to the photoresist interface.That is because the LCD glass substrate be fix and only have thinner injection nozzle to move, so use the conventional highly dissoluble thinning agent that is used for washing to cause in the infiltration at the interface of the photoresist at edge and reduce total production.
The example of this conventional diluent composition is as follows.
Japanese patent laid-open No. sho and 63-69563 disclose a kind of by remove the method for unwanted photoresist at the substrate contacts thinning agent.This patent adopts organic solvent as thinning agent, and this organic solvent for example is: as the ether and the ether acetic acid ester of cellosolve, cellosolve acetate, propylene glycol and propylene glycol acetic acid esters; Ketone as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone; With ester as methyl lactate, ethyl lactate, methyl acetate, ethyl acetate and butyl acetate.The flat 4-49938 of Japanese patent application publication No. discloses the purposes of propylene glycol methyl ether acetate as thinning agent, and the flat 4-42523 of Japanese patent application publication No. discloses the purposes of alkyl alkoxy propionic ester as thinning agent.
These solvents are used separately or are mixed with each other to improve physical property and stability.They are applied to carry out under high slew rate in the preparation of semiconductor devices of EBR, rather than are applied in the preparation of the fixing and TFT-LCD that the EBR straight line carries out of substrate.
, the problem to the contacting permeation of photoresist is not resolved.
Summary of the invention
An object of the present invention is to address the above problem, and provide and can be at short notice not only remove the diluent composition of unnecessary photoresist effectively, and needn't consider employed specific photoresist from the substrate that is used to prepare the LCD device but also from the large-size glass substrate that is used to prepare OLED display.
In order to reach this purpose, the invention provides a kind of diluent composition that is used to remove photoresist that comprises glycol ether compound (glycolether compound).
Preferably, this diluent composition can further comprise fiuorinated acrylic copolymer, organic solvent or its potpourri as surfactant.
Description of drawings
Fig. 1 to 3 illustrates the photo according to the edge washing test result (EBR surface treatment properties) of the diluent composition of the embodiment 1 to 11 of an embodiment of the invention.
Fig. 4 illustrates the photo according to the edge washing test result (EBR surface treatment properties) of the diluent composition of comparing embodiment 1 to 4.
Embodiment
Provide detailed description of the present invention hereinafter.
Can be at short notice remove unnecessary photoresist from the edge and the back side of photolithographic glass substrate of being used for (for example) preparation semiconductor devices, LCD and plasma scope (PDP) effectively according to the diluent composition that is used to remove photoresist of the present invention.
In addition, diluent composition of the present invention can be applicable to various technologies and can reduce cost, simplify the preparation method and improve output.Preferably, diluent composition of the present invention can be used for the photoetching process of OLED display or LCD.
The diluent composition that is used to remove photoresist of the present invention comprises glycol ether compound, and this glycol ether compound can be selected from the group of forming by the alkane glycol alkyl ether (alkylene glycol alkyl ether) of the alkyl that contains 1 to 6 carbon atom one of at least.Described alkane glycol alkyl ether has the alkylidene that contains 1 to 6 carbon atom and contains the alkyl of 1 to 6 carbon atom.Especially, in the group that its optional free ethylene glycol monomethyl ether, ethylene glycol ethyl ether, diethylene glycol dimethyl ether, propylene glycol monomethyl ether (PGME) and composition thereof are formed.The content of described glycol ether compound can be included in the diluent composition of 100wt%.
In addition, the diluent composition that is used to remove photoresist of the present invention can further comprise fiuorinated acrylic copolymer, organic solvent or its potpourri as surfactant.
In diluent composition of the present invention, the preferred fluorinated acrylic copolymer is as non-ionic surfactant.For fiuorinated acrylic copolymer, use a kind of weight average molecular weight range from 1,000 to 10,000, and preferred flash-point (measuring by open cup test) is that 200 ℃, proportion are that 1.10g/mL (at 25 ℃), viscosity are that 2100cst (20 ℃) and the surface tension in ethyl lactate are the fiuorinated acrylic copolymer of 24.0mN/m (Wilhermy method, wherein surface tension is measured in the ethyl lactate of dilution).
Described fiuorinated acrylic copolymer can obtain from the Megaface series that Dainippon Ink and Chemicals buys.Preferably, per 100 weight portion glycol ether compound, the content of the fiuorinated acrylic copolymer that comprises is 0.001 to 1 weight portion and more preferably 0.01 to 0.3 weight portion.If the content of fiuorinated acrylic copolymer is lower than 0.001 weight portion, then the dissolving power to photoresist obviously descends.On the contrary, if it surpasses 1 weight portion, although can obtain excellent removal ability because the dynamic surface tension at the interface is lowered, violent foaming can cause the fault of liquid level sensor.
Preferably, described organic solvent be selected from the group of forming by N-N-methyl-2-2-pyrrolidone N-(NMP), dimethyl sulfoxide (DMSO) (DMSO), dimethyl acetamide (DMAc), methyl isobutyl ketone (MIBK), gamma-butyrolacton (GBL), ethyl lactate (EL), propylene glycol methyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME) and 3-ethoxyl ethyl propionate (EEP) one of at least.Per 100 weight portion glycol ether compound, the content of the organic solvent that comprises are 20 to 50 weight portions.
If the content of described organic solvent is lower than 20 weight portions, then the performance of thinning agent is not obvious.On the contrary, if it surpasses 50 weight portions, then can not obtain satisfied EBR character.
In addition, when adopting non-ionic surfactant and solvent in the present invention, do not limit the mixed weight ratio of compound especially.
After being coated to photoresist on the substrate, by drip diluent composition or by with nozzles spray it to remove the unnecessary photoresist at the substrate edge and the back side.The amount of the diluent composition of the present invention that drips or spray can rely on the specific photosensitive resin and the film thickness adjustment of employing.Preferably, dropping or spray rate arrive in the 100cc/min scope 5.After spraying diluent composition, can obtain microcircuit pattern by photoetching process.
Hereinafter, by embodiment the present invention is described in further detail.But the following example only is that the present invention is not limited to this in order to understand the present invention.
Embodiment
Embodiment 1 to 11 and comparing embodiment 1 to 4
Component in the following table 1 and content prepare the diluent composition of embodiment 1 to 11 and comparing embodiment 1 to 4.
Table 1
| Classification (weight portion) | EGME 1 | nBA 2 | PGMEA 3 | PGME 4 | Acetone | MIBK 5 | DMAc 6 | NMP 7 | Sur. 8 |
| Embodiment 1 | 100 | - | - | - | - | - | - | - | 0.01 |
| Embodiment 2 | 100 | - | - | - | - | - | - | - | 0.05 |
| Embodiment 3 | 100 | - | - | - | - | - | - | - | 0.1 |
| Embodiment 4 | 100 | - | - | - | - | - | - | - | - |
| Embodiment 5 | 50 | - | - | - | - | 50 | - | - | - |
| Embodiment 6 | 70 | - | - | - | - | - | 30 | - | 0.01 |
| Embodiment 7 | 70 | - | 30 | - | - | - | - | - | 0.05 |
| Embodiment 8 | 70 | - | - | 30 | - | - | - | - | 0.1 |
| Embodiment 9 | 80 | - | - | - | - | - | 20 | - | - |
| Embodiment 10 | 70 | - | - | - | - | - | - | 30 | - |
| Embodiment 11 | - | - | - | 100 | - | - | - | - | - |
| Comparing embodiment 1 | - | 100 | - | - | - | - | - | - | - |
| Comparing embodiment 2 | - | - | 100 | - | - | - | - | - | - |
| Comparing embodiment 3 | - | - | - | - | 100 | - | - | - | - |
| Comparing embodiment 4 | - | 100 | - | - | - | - | - | - | 0.01 |
Note) in table 1,
1.EGME: glycol monoethyl ether;
2.nBA: n-butyl acetate;
3.PGMEA: propylene glycol methyl ether acetate;
4.PGME: propylene glycol monomethyl ether;
5.MIBK: methyl isobutyl ketone
6.DMAc: dimethyl acetamide
7.NMP:N-N-methyl-2-2-pyrrolidone N-
(8.Sur. surfactant): fiuorinated acrylic copolymer (Megaface series, DainipponInk and Chemicals)
Remove the test of unwanted photoresist by adopting described diluent composition
Prepare the substrate sample of using among the embodiment by following manner.With diameter is that 8 inches silicon dioxide substrate cleans (immerse in each groove 5 minutes) respectively in comprising two independent grooves of hydrogen peroxide and sulfuric acid, and washes with ultrapure water subsequently.This technology is carried out in specially designed cleaning device.Subsequently, with rotary drier (SRD 1800-6, VERTEQ) dry substrate.Afterwards, photoresist is coated on the substrate to predetermined thickness.Carry out the coating of photoresist with rotary coating machine (EBR TRACK, Korea S's semiconductor system).Be rotated coating by the photoresist that drips 10cc in static substrate center.Next step disperses photoresist in 3 seconds under the rotating speed of 300rpm with the rotary coating machine.Subsequently, substrate rotates to form preset thickness under the speed of 1000rpm with about 700.Rotation was carried out about 20 seconds.
Afterwards, photoresist is coated on 8 inches the silicon dioxide substrate and removes efficient (after this edge washing test is called the EBR test) at the unnecessary photoresist at edge with each diluent composition test of embodiment 1 to 11 and comparing embodiment 1 to 4.The EBR test is adopted and apply the employed identical rotary coating machine of photoresist on substrate.
By the EBR nozzle each diluent composition shown in the table 1 is sprayed on the substrate that applies photoresist to remove photoresist under following condition.Supply with each diluent composition from being equipped with manometric pressure vessel.Pressure in the container is that the flow velocity of 1.0kgf and the diluent composition supplied with by the EBR nozzle is 10cc/min.The EBR test findings of every kind of diluent composition is shown in following Fig. 1 to 4 and table 2.
(test condition)
1) disperses: 300rpm/3 second
2) coating: PR target thickness rpm/ second (700～1000rpm/20 second)
3) EBR:200rpm/10,15 seconds (having improved slow speed technology) with design LCD scanning EBR
4) drying: 600rpm, 10 seconds
Fig. 1 illustrates by the diluent composition with embodiments of the invention 1 to 4 and is applied to the EBR picture that organic EL obtains, Fig. 2 illustrates and is applied to EBR picture that organic insulating film obtains and Fig. 3 by the diluent composition with embodiments of the invention 5 to 7 and illustrates by the diluent composition with embodiments of the invention 8 to 11 and be applied to the EBR picture that the eurymeric photoresist obtains.In addition, Fig. 4 illustrates by the diluent composition with comparing embodiment 1 to 4 of the present invention and is applied to the EBR picture that organic insulating film obtains.By adopting Olympus 2D apparatus measures EBR picture.
Shown in Fig. 1 to 4, to find to compare with the composition of comparing embodiment 1 to 4, the diluent composition of embodiments of the invention 1 to 11 has excellent EBR surface treatment character.
The EBR test result of carrying out under the condition of each diluent composition that adopts embodiment 1 to 11 and comparing embodiment 1 to 4 is as shown in table 2 below.
Table 2
In table 2, good EBR lines homogeneity behind symbol " ◎ " the expression photoresist EBR, symbol " zero " expression 80% or better EBR lines homogeneity, symbol " △ " expression 50% or better EBR lines homogeneity, and symbol " * " expression has 20% or better EBR lines homogeneity at the conditions of streaking of the photoresist at edge.
As seen from Table 2, all diluent compositions of the present invention have shown excellent EBR ability (EBR lines homogeneity).
According to the diluent composition that is used to remove photoresist of the present invention can be at short notice effectively from being used to prepare LCD and OLED display, and unnecessary photoresist is removed at the edge of the glass substrate of preparation semiconductor devices and plasma display and the back side.In addition, diluent composition of the present invention can be used for kinds of processes and can reduce cost, simplify preparation technology and improve output.
Though with reference to preferred embodiment describing the present invention in detail, those person of skill in the art will appreciate that, can make various modifications and alternative under not departing from the spirit and scope of the invention of illustrating in the appended claims.
Claims (8)
1, a kind of diluent composition that is used to remove photoresist, it comprises glycol ether compound.
2, the described diluent composition of claim 1, this diluent composition further comprise fiuorinated acrylic copolymer, organic solvent or its potpourri as surfactant.
3, the described diluent composition of claim 1, wherein, described glycol ether compound be selected from by have in the group that C1 forms to the alkane glycol alkyl ether of C6 alkyl one of at least.
4, the described diluent composition of claim 2, wherein, the scope of the weight-average molecular weight of described fiuorinated acrylic copolymer is 1,000 to 10,000.
5, the described diluent composition of claim 2, wherein, described organic solvent be selected from the group of forming by N-N-methyl-2-2-pyrrolidone N-(NMP), dimethyl sulfoxide (DMSO) (DMSO), dimethyl acetamide (DMAc), methyl isobutyl ketone (MIBK), gamma-butyrolacton (GBL), ethyl lactate (EL), propylene glycol methyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME) and 3-ethoxyl ethyl propionate (EEP) one of at least.
6, the described diluent composition of claim 2, per 100 weight portion glycol ether compound, described diluent composition comprises the fiuorinated acrylic copolymer of 0.001 to 1 weight portion.
7, the described diluent composition of claim 2, per 100 weight portion glycol ether compound, described diluent composition comprises the organic solvent of 20 to 50 weight portions.
8, the described diluent composition of claim 2, per 100 weight portion glycol ether compound, described diluent composition comprises the fiuorinated acrylic copolymer of 0.001 to 1 weight portion and the organic solvent of 20 to 50 weight portions.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050110764A KR20070052943A (en) | 2005-11-18 | 2005-11-18 | Thinner composition for removing photoresist |
| KR10-2005-0110764 | 2005-11-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101300529A true CN101300529A (en) | 2008-11-05 |
Family
ID=38048803
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800410620A Pending CN101300529A (en) | 2005-11-18 | 2006-11-07 | Thinner composition for removing photoresist |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20070052943A (en) |
| CN (1) | CN101300529A (en) |
| TW (1) | TW200728939A (en) |
| WO (1) | WO2007058443A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050394A (en) * | 2011-10-13 | 2013-04-17 | 上海华虹Nec电子有限公司 | Etching method of extra-thick photoresist |
| CN104969129A (en) * | 2013-02-08 | 2015-10-07 | 东进世美肯株式会社 | Thinner composition and use thereof |
| WO2022032478A1 (en) * | 2020-08-11 | 2022-02-17 | Showa Denko K.K. | Solvent composition |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI467349B (en) * | 2008-11-19 | 2015-01-01 | Toagosei Co Ltd | Manufacturing method of substrates having patterned film object of conductive polymer and substrates having patterned film object of conductive polymer |
| US20120108067A1 (en) * | 2010-10-29 | 2012-05-03 | Neisser Mark O | Edge Bead Remover For Coatings |
| KR102128374B1 (en) * | 2014-01-23 | 2020-07-01 | 동우 화인켐 주식회사 | Thinner composition for improving coating and removing performance of resist |
| JP6899220B2 (en) * | 2017-01-11 | 2021-07-07 | 株式会社ダイセル | Composition for removing resist |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0721638B2 (en) * | 1986-07-18 | 1995-03-08 | 東京応化工業株式会社 | Substrate processing method |
| JP2001188358A (en) * | 1999-12-28 | 2001-07-10 | Mitsubishi Gas Chem Co Inc | Edge bead remover |
| US7166419B2 (en) * | 2002-09-26 | 2007-01-23 | Air Products And Chemicals, Inc. | Compositions substrate for removing etching residue and use thereof |
| US20050032657A1 (en) * | 2003-08-06 | 2005-02-10 | Kane Sean Michael | Stripping and cleaning compositions for microelectronics |
| KR101213144B1 (en) * | 2003-10-20 | 2012-12-17 | 주식회사 동진쎄미켐 | Thinner composition for removing photosensitive resin |
-
2005
- 2005-11-18 KR KR1020050110764A patent/KR20070052943A/en not_active Application Discontinuation
-
2006
- 2006-11-07 CN CNA2006800410620A patent/CN101300529A/en active Pending
- 2006-11-07 WO PCT/KR2006/004638 patent/WO2007058443A1/en active Application Filing
- 2006-11-10 TW TW095141773A patent/TW200728939A/en unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103050394A (en) * | 2011-10-13 | 2013-04-17 | 上海华虹Nec电子有限公司 | Etching method of extra-thick photoresist |
| CN103050394B (en) * | 2011-10-13 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | The lithographic method of super thick photoresist |
| CN104969129A (en) * | 2013-02-08 | 2015-10-07 | 东进世美肯株式会社 | Thinner composition and use thereof |
| TWI610138B (en) * | 2013-02-08 | 2018-01-01 | 東進世美肯股份有限公司 | Thinner composition and uses thereof |
| CN104969129B (en) * | 2013-02-08 | 2020-01-17 | 东进世美肯株式会社 | Diluent composition and use thereof |
| WO2022032478A1 (en) * | 2020-08-11 | 2022-02-17 | Showa Denko K.K. | Solvent composition |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007058443A1 (en) | 2007-05-24 |
| TW200728939A (en) | 2007-08-01 |
| KR20070052943A (en) | 2007-05-23 |
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Open date: 20081105 |