JP2005338825A - Thinner composition for removing photoresist and method for manufacturing semiconductor device or liquid crystal display using the same - Google Patents
Thinner composition for removing photoresist and method for manufacturing semiconductor device or liquid crystal display using the same Download PDFInfo
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- JP2005338825A JP2005338825A JP2005146572A JP2005146572A JP2005338825A JP 2005338825 A JP2005338825 A JP 2005338825A JP 2005146572 A JP2005146572 A JP 2005146572A JP 2005146572 A JP2005146572 A JP 2005146572A JP 2005338825 A JP2005338825 A JP 2005338825A
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- ethanoate
- ether acetate
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 64
- 239000000203 mixture Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title abstract description 26
- -1 alkyl amide Chemical class 0.000 claims abstract description 20
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 18
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 10
- 125000002947 alkylene group Chemical group 0.000 claims description 10
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 9
- 150000001346 alkyl aryl ethers Chemical class 0.000 claims description 9
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 5
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- 235000019439 ethyl acetate Nutrition 0.000 claims description 3
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropyl acetate Chemical compound CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 claims description 3
- KXKVLQRXCPHEJC-UHFFFAOYSA-N methyl acetate Chemical compound COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 claims description 3
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 claims description 3
- FUWDFGKRNIDKAE-UHFFFAOYSA-N 1-butoxypropan-2-yl acetate Chemical compound CCCCOCC(C)OC(C)=O FUWDFGKRNIDKAE-UHFFFAOYSA-N 0.000 claims description 2
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 claims description 2
- DMFAHCVITRDZQB-UHFFFAOYSA-N 1-propoxypropan-2-yl acetate Chemical compound CCCOCC(C)OC(C)=O DMFAHCVITRDZQB-UHFFFAOYSA-N 0.000 claims description 2
- OHLUUHNLEMFGTQ-UHFFFAOYSA-N N-methylacetamide Chemical compound CNC(C)=O OHLUUHNLEMFGTQ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 3
- 239000000758 substrate Substances 0.000 abstract description 16
- 239000011521 glass Substances 0.000 abstract description 6
- 230000002093 peripheral effect Effects 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 14
- 238000005530 etching Methods 0.000 description 5
- 231100000111 LD50 Toxicity 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- JDSQBDGCMUXRBM-UHFFFAOYSA-N 2-[2-(2-butoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCOC(C)COC(C)COC(C)CO JDSQBDGCMUXRBM-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 231100000820 toxicity test Toxicity 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 206010053759 Growth retardation Diseases 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 241000699666 Mus <mouse, genus> Species 0.000 description 1
- 241000699670 Mus sp. Species 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 206010074268 Reproductive toxicity Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010227 cup method (microbiological evaluation) Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 231100000001 growth retardation Toxicity 0.000 description 1
- 230000003394 haemopoietic effect Effects 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 150000003903 lactic acid esters Chemical class 0.000 description 1
- 201000002364 leukopenia Diseases 0.000 description 1
- 231100001022 leukopenia Toxicity 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000008558 metabolic pathway by substance Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 210000000056 organ Anatomy 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007540 photo-reduction reaction Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001850 reproductive effect Effects 0.000 description 1
- 230000007696 reproductive toxicity Effects 0.000 description 1
- 231100000372 reproductive toxicity Toxicity 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C11D2111/22—
Abstract
Description
本発明は、フォトレジスト除去用シンナー組成物及びそれを用いた半導体装置又は液晶表示装置の製造方法に関する。 The present invention relates to a thinner composition for removing a photoresist and a method for manufacturing a semiconductor device or a liquid crystal display device using the same.
半導体製造工程のうちのフォトリソグラフィ工程はウエハにフォトレジストを塗布し、予め設計されたパターンを転写し、転写されたパターンに沿って適切にエッチングするエッチング工程によって電子回路を構成する作業であって、非常に重要な作業の一つである。 Among the semiconductor manufacturing processes, the photolithography process is an operation for forming an electronic circuit by an etching process in which a photoresist is applied to a wafer, a pre-designed pattern is transferred, and etching is appropriately performed along the transferred pattern. This is one of the most important tasks.
このようなフォトリソグラフィ工程は、
（１）ウエハの表面にフォトレジストを均一に塗布する工程、
（２）塗布されたフォトレジストから溶剤を蒸発させてフォトレジストがウエハの表面に付着するようにするソフトベイキング工程、
（３）紫外線などの光源を利用してマスク上の回路パターンを、反復的に順次に縮少投影しながらフォトレジストを露光じてマスクパターンをフォトレジスト上に転写する露光工程、
（４）光源からの露光によって、フォトレジストの溶解度差のような物理的性質が異なるようになった部分を現像液を用いて選択的に除去する現像工程、
（５）現像作業後にウエハ上に残留するフォトレジストのウエハへのより緊密な固着のためのハードベイキング工程、
（６）現像されたフォトレジストのパターンに沿ってウエハの所定部位をエッチングするエッチング工程及び
（７）上記工程の後、フォトレジストのパターンを除去する剥離工程
などに大別することができる。
Such a photolithography process includes:
(1) A step of uniformly applying a photoresist to the surface of the wafer,
(2) a soft baking process in which the solvent is evaporated from the applied photoresist so that the photoresist adheres to the surface of the wafer;
(3) An exposure process of transferring a mask pattern onto a photoresist by exposing the photoresist while repeatedly and sequentially projecting a circuit pattern on the mask using a light source such as ultraviolet rays.
(4) a development step of selectively removing a portion having a different physical property, such as a difference in solubility of the photoresist, by using a developer by exposure from a light source;
(5) a hard baking process for closer adhesion of the photoresist remaining on the wafer after the development operation to the wafer;
(6) An etching process for etching a predetermined portion of the wafer along the developed photoresist pattern; (7) After the above process, it can be roughly divided into a peeling process for removing the photoresist pattern, and the like.
このようなフォトリソグラフィ工程のうちの（２）のソフトベイキング工程後にはウエハのエッジ部分や裏面に不必要に塗布されたフォトレジストを除去する作業が必要である。これは、ウエハのエッジや裏面に存在するフォトレジストによって、後工程のエッチング、イオン注入などにおいて多様な不良が発生し、これによって半導体装置の収率の低下を招くという問題を招くためである。 After the soft baking step (2) in such a photolithography step, it is necessary to remove the photoresist unnecessarily applied to the edge portion and the back surface of the wafer. This is because the photoresist existing on the edge and back surface of the wafer causes various defects in subsequent etching and ion implantation, thereby causing a problem that the yield of the semiconductor device is reduced.
従来から、ウエハのエッジや裏面に存在するフォトレジストを除去するために、ウエハのエッジ部分の上下に噴射ノズルを設置し、このノズルを通じてエッジや裏面に有機溶剤成分からなるシンナーを噴射する方法が主に使用されている。 Conventionally, in order to remove the photoresist existing on the edge and back surface of the wafer, there has been a method in which spray nozzles are installed above and below the edge portion of the wafer, and a thinner composed of an organic solvent component is sprayed on the edge and back surface through this nozzle. Mainly used.
フォトレジストを除去するためのシンナー組成物として、例えば、セロソルブ、セロソルブアセテート、プロピレングリコールエーテル、プロピレングリコールエーテルアセテートなどのエーテル及びエーテルアセテート類、アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノンなどのケトン類、乳酸メチル、乳酸エチル、メチルアセテート、エチルアセテート、ブチルアセテートなどのエステル類が用いられており、このシンナー組成物を、基板の表面、裏面、エッジ等に付着した不要なフォトレジストに接触させて、除去する方法が提案されている（例えば、特許文献１）。 Thinner compositions for removing the photoresist include, for example, ethers and ether acetates such as cellosolve, cellosolve acetate, propylene glycol ether, propylene glycol ether acetate, ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, lactic acid Esters such as methyl, ethyl lactate, methyl acetate, ethyl acetate, and butyl acetate are used, and this thinner composition is removed by bringing it into contact with unnecessary photoresist attached to the surface, back surface, edge, etc. of the substrate. A method has been proposed (for example, Patent Document 1).
また、シンナー組成物としてプロピレングリコールメチルエーテルアセテート（例えば、特許文献２）、アルキルアルコキシプロピオネート等も使用されている（例えば、特許文献３）。 In addition, propylene glycol methyl ether acetate (for example, Patent Document 2), alkyl alkoxypropionate, and the like are also used as a thinner composition (for example, Patent Document 3).
エチレングリコールモノエチルエーテルアセテートを用いる場合、溶解速度は優れているが、揮発性及び引火性が高く、白血球減少症等の造血器官に影響を与え、肝臓及び腎臓等の障害を招き、新生児においては発育遅延を起こし、弾性の生殖機能を損なうなど、生殖毒性を有するという問題がある。また、乳酸エチルは、粘度が高く、溶解速度が低いため、単独では十分な洗浄効果を得ることができないという問題がある。 When ethylene glycol monoethyl ether acetate is used, the dissolution rate is excellent, but it is highly volatile and flammable, affecting hematopoietic organs such as leukopenia, causing liver and kidney damage, and in newborns There is a problem of having reproductive toxicity, such as causing growth retardation and impairing elastic reproductive function. In addition, ethyl lactate has a problem that it cannot obtain a sufficient cleaning effect by itself because of its high viscosity and low dissolution rate.
したがって、液晶表示装置に使用されるガラス基板等及び半導体装置に使用されるウエハ等の周縁及び後面部位に使用されて、不必要に付着されたフォトレジストを短時間に効率的に除去できるシンナー組成物に関するさらなる研究が要求されているのが実情である。
このような従来の技術の問題点を解決しようと、本発明は、液晶表示装置に使用されるガラス基板及び半導体製造に使用されるウエハ等の周縁と後面部位に使用されて、不必要に付着されたフォトレジストを短時間に効率的に除去することができるフォトレジスト除去用シンナー組成物を提供することを目的とする。 In order to solve such problems of the conventional technology, the present invention is used on the peripheral and rear surface portions of glass substrates used in liquid crystal display devices and wafers used in semiconductor manufacturing, and is unnecessarily attached. An object of the present invention is to provide a thinner composition for removing a photoresist, which can efficiently remove the applied photoresist in a short time.
本発明の他の目的は、人体に対する安全性が高く、作業者により安全であり、多様な工程、特にスピンレス・フォトレジュスト工程に適用可能であり、液晶表示装置及び半導体製造工程等の歩留まりを向上させることができるフォトレジスト除去用シンナー組成物及びそれを用いた液晶表示装置及び半導体装置の製造方法を提供することを目的とする。 Another object of the present invention is that it is highly safe for the human body and safer for workers, and can be applied to various processes, in particular, spinless photoreduction processes, and improves the yield of liquid crystal display devices and semiconductor manufacturing processes. It is an object to provide a thinner composition for removing a photoresist, a liquid crystal display device using the same, and a method for manufacturing a semiconductor device.
前記目的を達成するために、本発明は、ａ）アルキルアミド及びｂ）アルキルエタノエイトを含むフォトレジスト除去用シンナー組成物が提供される。
また、ａ）アルキルアミド、ｂ）アルキルエタノエイト及びｃ）アルキレングリコールモノアルキルエーテルアセテートを含むフォトレジスト除去用シンナー組成物が提供される。
さらに、本発明によれば、上述したフォトレジスト除去用シンナー組成物を使用する半導体装置又は液晶表示装置の製造方法が提供される。
In order to achieve the above object, the present invention provides a thinner composition for removing a photoresist comprising a) an alkylamide and b) an alkyl ethanolate.
There is also provided a thinner composition for removing a photoresist comprising a) an alkyl amide, b) an alkyl ethanolate and c) an alkylene glycol monoalkyl ether acetate.
Furthermore, according to this invention, the manufacturing method of the semiconductor device or liquid crystal display device which uses the thinner composition for photoresist removal mentioned above is provided.
本発明によるフォトレジスト除去用シンナー組成物は、人体に対する安全性が高く、作業者により安全であり、液晶表示装置に使用されるガラス基板及び半導体製造等に使用されるウエハの周縁及び後面部位に、不必要に付着したフォトレジストを短時間に効率的に除去することができる。 The thinner composition for removing a photoresist according to the present invention is highly safe for the human body and safer for the operator, and is applied to the peripheral and rear surface portions of a glass substrate used for a liquid crystal display device and a wafer used for semiconductor manufacturing. Unnecessarily attached photoresist can be efficiently removed in a short time.
また、本発明のフォトレジスト除去用シンナー組成物を用いて、半導体装置又は液晶表示装置を製造する場合には、これらの製造における多様な工程、特にスピンレス・フォトレジスト工程に有効に適用することができ、液晶表示装置及び半導体製造工程を簡便化し、経済的に生産収率を向上させることができる。また、本発明のフォトレジスト除去用シンナー組成物は、フォトレジスト噴射チャック、つまり、ＰＲ噴射用スリットノズルに不必要に残存するフォトレジストの除去にも卓越した効果があり、より液晶表示装置及び半導体装置等の歩留まりを向上させることが可能である。 Further, when a semiconductor device or a liquid crystal display device is manufactured using the thinner composition for removing a photoresist of the present invention, it can be effectively applied to various processes in the manufacturing, particularly a spinless photoresist process. In addition, the liquid crystal display device and the semiconductor manufacturing process can be simplified, and the production yield can be improved economically. In addition, the thinner composition for removing a photoresist of the present invention has an excellent effect in removing photoresist remaining unnecessarily in a photoresist jet chuck, that is, a PR jet slit nozzle. It is possible to improve the yield of devices and the like.
以下に、本発明を詳細に説明する。
本発明のフォトレジスト除去用シンナー組成物は、少なくとも、ａ）アルキルアミド及びｂ）アルキルエタノエイトを含む。また、この組成物に、さらに、ｃ）アルキレングリコールモノアルキルエーテルアセテートを含んでもよい。
The present invention is described in detail below.
The thinner composition for removing a photoresist of the present invention contains at least a) an alkyl amide and b) an alkyl ethanolate. Moreover, this composition may further contain c) alkylene glycol monoalkyl ether acetate.
本発明に使用されるアルキルアミド、アルキルエタノエイト及びアルキレングリコールモノアルキルエーテルアセテートはシンナー組成物に溶剤として使用され、各々半導体等級の極めて純粋なものを使用することが好ましく、ＶＬＳＩ等級では０．１μｍ水準に濾過したものを使用することが好ましい。 The alkyl amide, alkyl ethanolate and alkylene glycol monoalkyl ether acetate used in the present invention are used as solvents in the thinner composition, and each of them is preferably a semiconductor grade extremely pure one, and the VLSI grade is 0.1 μm. It is preferable to use the one filtered to the standard.
本発明に使用されるａ）のアルキルアミドは、フォトレジストの初期溶解速度を高めて、液晶表示装置等に使用されるガラス基板及び半導体製造工程で発生する問題を補完する作用を果たす。 The alkylamide of a) used in the present invention increases the initial dissolution rate of the photoresist and serves to supplement the problems that occur in the glass substrate and semiconductor manufacturing processes used in liquid crystal display devices and the like.
アルキルアミドは、例えば、アルキル基の炭素数が１から５程度のアルキルアミドが挙げられる。具体的には、Ｎ−メチルアセトアミド、ジメチルホルムアミドまたはジメチルアセトアミドなどを用いることができる。なかでも、ジメチルアセトアミドが好ましい。これらは、単独で用いてもよいし、２種以上を混合して用いてもよい。
アルキルアミドは、シンナー組成物に１〜９９重量部で含まれるのが好ましく、その含量が前記範囲内である場合には、揮発度及び溶解力の増加面でさらに良い。
Examples of the alkylamide include alkylamides having an alkyl group with about 1 to 5 carbon atoms. Specifically, N-methylacetamide, dimethylformamide, dimethylacetamide, or the like can be used. Of these, dimethylacetamide is preferable. These may be used alone or in combination of two or more.
The alkylamide is preferably contained in the thinner composition in an amount of 1 to 99 parts by weight, and when the content is within the above range, it is even better in terms of increasing volatility and dissolving power.
本発明に使用されるｂ）のアルキルエタノエイトは、アルキル基の炭素数が１〜４程度であるものが挙げられる。具体的には、メチルエタノエイト、エチルエタノエイト、イソプロピルエタノエイト、ノルマルプロピルエタノエイトまたはブチルエタノエイトなどが挙げられる。特に、アルキルエタノエイトとして粘度が比較的低く、適当な揮発度を有するイソプロピルエタノエイト、ノルマルプロピルエタノエイトまたはブチルエタノエイトが好ましい。さらに、ブチルエタノエイトがより好ましい。これらは、単独で用いてもよいし、２種以上を混合して用いてもよい。 Examples of b) alkylethanoate used in the present invention include those in which the alkyl group has about 1 to 4 carbon atoms. Specific examples include methyl ethanoate, ethyl ethanoate, isopropyl ethanoate, normal propyl ethanoate, and butyl ethanoate. In particular, isopropyl ethanoate, normal propyl ethanoate or butyl ethanoate having a relatively low viscosity and appropriate volatility is preferred as the alkyl ethanoate. Furthermore, butyl ethanolate is more preferable. These may be used alone or in combination of two or more.
ブチルエタノエイトは各種樹脂に対する溶解度が優れており、特に表面張力が低いだけでなく、シンナー組成物に所定の含量のみを添加しても、優れた界面特性を発揮することができる。ブチルエタノエイトは、毒性実験においてマウスに口腔投与による５０％致死量を示すＬＤ50が７．０ｇ／ｋｇであり、物理的性質は沸点が１２６．１℃、引火点（クローズドカップ方式で測定）が２３℃、粘度（２５℃）が０．７４ｃｐｓ、表面張力が２５ｄｙｎｅ／ｃｍ2である。 Butyl ethanoate has excellent solubility in various resins, and in particular, not only has a low surface tension, but also exhibits excellent interface characteristics even when only a predetermined content is added to the thinner composition. Butylethanoate has an LD 50 of 7.0 g / kg, which shows 50% lethal dose by oral administration to mice in toxicity experiments, and has physical properties of boiling point of 126.1 ° C., flash point (measured by closed cup method) Is 23 ° C., the viscosity (25 ° C.) is 0.74 cps, and the surface tension is 25 dyne / cm 2 .
アルキルエタノエイトは、シンナー組成物に１〜８０重量部で含まれるのが好ましく、その含量が前記範囲である場合には適正な揮発力と溶解力を有するためフォトレジストの除去に効果的であるという利点がある。 Alkyl ethanoate is preferably contained in the thinner composition in an amount of 1 to 80 parts by weight, and when the content is within the above range, it has an appropriate volatility and dissolving power, so it is effective for removing the photoresist. There is an advantage.
また、本発明のフォトレジスト除去用シンナー組成物には、さらに、ｃ）アルキレングリコールモノアルキルエーテルアセテートが含有されていてもよく、例えば、アルキレン基の炭素数が１から５程度のものが挙げられる。具体的には、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、プロピレングリコールモノプロピルエーテルアセテートまたはプロピレングリコールモノブチルエーテルアセテートなどが挙げられる。特に高分子に対する溶解度が卓越したプロピレングリコールモノメチルエーテルアセテートを使用するのが好ましい。これらは、単独で用いてもよいし、２種以上を混合して用いてもよい。 The thinner composition for removing a photoresist of the present invention may further contain c) an alkylene glycol monoalkyl ether acetate, and examples thereof include those having an alkylene group of about 1 to 5 carbon atoms. . Specific examples include propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate or propylene glycol monobutyl ether acetate. In particular, it is preferable to use propylene glycol monomethyl ether acetate having excellent solubility in a polymer. These may be used alone or in combination of two or more.
プロピレングリコールモノメチルエーテルアセテートは、空気中に拡散した際、人体に対する安全性が高く、物質代謝側面でも人体で急速にプロピレングリコールとアルコールに分解されるため、安全である。また、毒性実験でマウスに対する口腔投与による５０％致死量を示すＬＤ50は８．５ｇ／ｋｇであり、加水分解によって急速に分解される。 Propylene glycol monomethyl ether acetate is safe because it is highly safe for the human body when it diffuses into the air, and is rapidly decomposed into propylene glycol and alcohol by the human body in terms of substance metabolism. Moreover, LD 50 which shows 50% lethal dose by the oral administration with respect to a mouse | mouth in a toxicity experiment is 8.5 g / kg, and it decomposes | disassembles rapidly by hydrolysis.
アルキレングリコールモノアルキルエーテルアセテートは、シンナー組成物に１〜８０重量部で含まれるのが好ましく、その含量が前記範囲内である場合には適正な揮発力と溶解力を有するためフォトレジストの除去にさらに効果的である。なお、アルキレングリコールモノアルキルエーテルアセテートを１〜８０重量部で含有する場合には、アルキルアミドは１〜９８重量部、アルキルエタノエイトは１〜８０重量部含むことが好ましい。 The alkylene glycol monoalkyl ether acetate is preferably contained in the thinner composition in an amount of 1 to 80 parts by weight. When the content is within the above range, it has an appropriate volatilizing power and dissolving power, so that the photoresist can be removed. It is even more effective. In addition, when it contains 1 to 80 parts by weight of alkylene glycol monoalkyl ether acetate, it is preferable to contain 1 to 98 parts by weight of alkylamide and 1 to 80 parts by weight of alkyl ethanolate.
これらのようなシンナー組成物は、例えば、半導体装置又は液晶表示装置の製造工程において、これらを構成する基板に対して、滴下またはノズルを通じたスプレー方式で噴射することにより、例えば、基板のエッジ及び／又は後面部位等に発生した不必要なフォトレジストを除去することができる。 Thinner compositions such as these, for example, in the manufacturing process of a semiconductor device or a liquid crystal display device, are sprayed onto a substrate constituting them by a drop method or a spray method through a nozzle, for example, the edge of the substrate and Unnecessary photoresist generated at the rear surface portion or the like can be removed.
フォトレジスト除去用シンナー組成物の滴下あるいは噴射量は、使用する感光性樹脂の種類、膜の厚さ等によって調節して使用することができ、特に５〜１００ｃｃ／分の範囲で選択して使用するのが好ましい。また、本発明においては、シンナー組成物を噴射した後、後続のフォトリソグラフィ工程を経ることにより、基板に微細回路パターンを形成することができる。 The dropping or spraying amount of the thinner composition for removing the photoresist can be adjusted and used depending on the type of the photosensitive resin used, the thickness of the film, etc., and particularly selected and used in the range of 5 to 100 cc / min. It is preferable to do this. Moreover, in this invention, after spraying a thinner composition, a fine circuit pattern can be formed in a board | substrate by passing through a subsequent photolithography process.
このような本発明のフォトレジスト除去用シンナー組成物とこれを利用した半導体素子または液晶表示装置の製造方法は液晶表示装置等に使用されるガラス基板等及び半導体製造等に使用されるウエハ等の周縁及び後面部位等に、不必要に付着されたフォトレジストを短時間に効率的に除去することができるだけでなく、人体に対する安全性が高くて作業者により安全である。また、多様な工程、特にスピン−レスＰＲ工程に適用可能であり、液晶表示装置及び半導体装置の製造工程を簡便化して、経済的に生産収率を向上させることができる。さらに、本発明のフォトレジスト除去用シンナー組成物はＰＲ噴射チャック、つまり、ＰＲ噴射用スリットノズルに不必要に残っているＰＲの除去にも卓越した効果がある。 Such a thinner composition for removing a photoresist of the present invention and a method for manufacturing a semiconductor element or a liquid crystal display device using the same are used for a glass substrate used for a liquid crystal display device, a wafer used for semiconductor manufacturing, etc. Photoresist unnecessarily attached to the peripheral edge and the rear surface portion can be efficiently removed in a short time, and the safety to the human body is high and the worker is safer. Further, the present invention can be applied to various processes, in particular, a spin-less PR process, and the manufacturing process of the liquid crystal display device and the semiconductor device can be simplified and the production yield can be improved economically. Further, the thinner composition for removing a photoresist of the present invention has an excellent effect in removing the PR remaining unnecessarily in the PR jet chuck, that is, the slit nozzle for PR jet.
以下、本発明の理解のために好ましい実施例を提示するが、下記の実施例は本発明を例示するものに過ぎず、本発明の範囲が下記の実施例に限定されるわけではない。 Hereinafter, preferred examples will be presented for the understanding of the present invention. However, the following examples are merely illustrative of the present invention, and the scope of the present invention is not limited to the following examples.
実施例１
ｎ−ブチルアセテート（ｎＢＡ）７０重量部及びジメチルアセトアミド（ｄ、ＤＭＡｃ）３０重量部を均一に混合してシンナー組成物を製造した。
Example 1
A thinner composition was prepared by uniformly mixing 70 parts by weight of n-butyl acetate (nBA) and 30 parts by weight of dimethylacetamide (d, DMAc).
実施例２〜７、及び比較例１〜５
表１に示した成分と組成比とを用いたことを除いて、実施例１と同様の方法でシンナー組成物を製造した。なお、表１の単位は重量部である。
Examples 2-7 and Comparative Examples 1-5
A thinner composition was produced in the same manner as in Example 1 except that the components and composition ratios shown in Table 1 were used. The units in Table 1 are parts by weight.
まず、直径が８インチの酸化シリコン基板を各々過酸化水素／硫酸混合物を含有する２つの浴で洗浄（それぞれの浴で５分間浸漬させる）した後、超純水ですすいだ。この工程は注文製作した洗浄設備で行った。 First, an 8-inch diameter silicon oxide substrate was washed with two baths each containing a hydrogen peroxide / sulfuric acid mixture (immersed in each bath for 5 minutes), and then rinsed with ultrapure water. This process was performed with a custom-made cleaning facility.
その後、これら基板をスピンドライヤー（ＳＲＤ １８００−６、ＶＥＲＴＥＱ社）で回転乾燥させた。続いて、基板の上部面に表２に示した各々のフォトレジストを回転被覆器（ＥＢＲ ＴＲＡＣＫ、コリョ半導体社）を使用して一定の厚さで被覆した。回転被覆操作においては、フォトレジスト１０ｃｃを、停止した基板の中央に滴下した後、回転被覆器を使用して５００ｒｐｍで３秒間フォトレジストを分布させ、基板を約５００〜１０００ｒｐｍ程度の回転速度に加速させて各フォトレジストを所定の厚さに調整した。この時、回転時間は約２０〜３０秒である。 Then, these substrates were spin-dried with a spin dryer (SRD 1800-6, VERTEQ). Subsequently, each photoresist shown in Table 2 was coated on the upper surface of the substrate with a certain thickness using a rotary coater (EBR TRACK, Koryo Semiconductor Co., Ltd.). In the spin coating operation, after 10 cc of photoresist is dropped on the center of the stopped substrate, the photo resist is distributed at 500 rpm for 3 seconds using a spin coater, and the substrate is accelerated to a rotational speed of about 500 to 1000 rpm. Each photoresist was adjusted to a predetermined thickness. At this time, the rotation time is about 20 to 30 seconds.
このように準備されたフォトレジストが被覆された基板に、実施例１〜７及び比較例１〜５で製造したシンナー組成物を各々噴射して、表３の条件でフォトレジストを除去した。この時、各々のシンナー組成物は圧力計が装置された加圧筒から供給され、加圧圧力は１．０ｋｇｆ、ＥＢＲノズルから出るシンナー組成物の流量は１０〜２０ｃｃ／分とした。 The thinner compositions produced in Examples 1 to 7 and Comparative Examples 1 to 5 were each sprayed on the substrate coated with the photoresist thus prepared, and the photoresist was removed under the conditions shown in Table 3. At this time, each thinner composition was supplied from a pressurizing cylinder equipped with a pressure gauge, the pressurizing pressure was 1.0 kgf, and the flow rate of the thinner composition exiting from the EBR nozzle was 10 to 20 cc / min.
本発明のフォトレジスト用シンナー組成物は、すべてのフォトレジストに対して適用することができる。従って、半導体装置（トランジスタ、キャパシタ、メモリ、発光素子、太陽電池等）、電子機器（各種ディスプレイ等）等の広範な製品の製造において、フォトレジストを利用する製造プロセスの全てにおいて利用することができる。
The thinner composition for photoresists of the present invention can be applied to all photoresists. Therefore, in manufacturing a wide range of products such as semiconductor devices (transistors, capacitors, memories, light emitting elements, solar cells, etc.), electronic devices (various displays, etc.), it can be used in all manufacturing processes using photoresist. .
Claims (8)
ｂ）アルキルエタノエイト
を含むフォトレジスト除去用シンナー組成物。 A thinner composition for removing a photoresist, comprising a) an alkylamide and b) an alkylethanoate.
ｂ）アルキルエタノエイト１〜８０重量部
を含む請求項１に記載のフォトレジスト除去用シンナー組成物。 The thinner composition for removing a photoresist according to claim 1, comprising a) 1 to 99 parts by weight of an alkylamide and b) 1 to 80 parts by weight of an alkyl ethanoate.
ｂ）アルキルエタノエイト及び
ｃ）アルキレングリコールモノアルキルエーテルアセテート
を含むフォトレジスト除去用シンナー組成物。 a) alkylamides,
A thinner composition for removing a photoresist, comprising b) an alkyl ethanolate and c) an alkylene glycol monoalkyl ether acetate.
ｂ）アルキルエタノエイト１〜８０重量部及び
ｃ）アルキレングリコールモノアルキルエーテルアセテート１〜８０重量部
を含む請求項５に記載のフォトレジスト除去用シンナー組成物。 a) 1 to 98 parts by weight of an alkylamide,
The thinner composition for removing a photoresist according to claim 5, comprising 1) to 80 parts by weight of an alkyl ethanolate and c) 1 to 80 parts by weight of an alkylene glycol monoalkyl ether acetate.
A method for producing a semiconductor device or a liquid crystal display device, wherein the thinner composition for removing a photoresist according to claim 1 is used.
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| JP2014142635A (en) * | 2012-12-27 | 2014-08-07 | Fujifilm Corp | Resist removing liquid and method for stripping resist |
| WO2021059753A1 (en) | 2019-09-24 | 2021-04-01 | ダイキン工業株式会社 | Welded body |
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| KR102445582B1 (en) | 2016-02-11 | 2022-09-22 | 주식회사 이엔에프테크놀로지 | Thinner composition for removing color resist |
| CN106773562A (en) * | 2016-12-23 | 2017-05-31 | 昆山艾森半导体材料有限公司 | A kind of removal AZ photoresists remove glue |
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| WO2003058350A1 (en) * | 2002-01-11 | 2003-07-17 | Clariant International Ltd. | A cleaning agent composition for a positive or a negative photoresist |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3978255B2 (en) * | 1997-06-24 | 2007-09-19 | Ａｚエレクトロニックマテリアルズ株式会社 | Lithographic cleaning agent |
| KR100271761B1 (en) * | 1997-11-21 | 2000-12-01 | 윤종용 | Manufacturing method of semiconductor device |
| KR100638243B1 (en) * | 2000-11-20 | 2006-10-24 | 주식회사 동진쎄미켐 | Thinner compositon for washing resist of lcd device |
| KR100569533B1 (en) * | 2001-10-25 | 2006-04-07 | 주식회사 하이닉스반도체 | Solution composition for removing a remaining photoresist resins |
| KR100843984B1 (en) * | 2002-02-22 | 2008-07-07 | 주식회사 동진쎄미켐 | Thinner composition for removing photosensitive resin |
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2004
- 2004-05-25 KR KR1020040037385A patent/KR101142868B1/en active IP Right Grant
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2005
- 2005-05-19 JP JP2005146572A patent/JP4669737B2/en not_active Expired - Fee Related
- 2005-05-19 TW TW094116294A patent/TWI405051B/en not_active IP Right Cessation
- 2005-05-25 CN CN2005100740420A patent/CN1702560B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07128867A (en) * | 1993-06-28 | 1995-05-19 | Tokyo Ohka Kogyo Co Ltd | Solvent for washing and removing resist and production of substrate for producing electronic parts with same |
| WO2003058350A1 (en) * | 2002-01-11 | 2003-07-17 | Clariant International Ltd. | A cleaning agent composition for a positive or a negative photoresist |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006251785A (en) * | 2005-02-09 | 2006-09-21 | Showa Denko Kk | Photosensitive composition removing liquid |
| JP4698435B2 (en) * | 2005-02-09 | 2011-06-08 | 昭和電工株式会社 | Photosensitive composition remover |
| US8021490B2 (en) | 2007-01-04 | 2011-09-20 | Eastman Chemical Company | Substrate cleaning processes through the use of solvents and systems |
| JP2014142635A (en) * | 2012-12-27 | 2014-08-07 | Fujifilm Corp | Resist removing liquid and method for stripping resist |
| WO2021059753A1 (en) | 2019-09-24 | 2021-04-01 | ダイキン工業株式会社 | Welded body |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI405051B (en) | 2013-08-11 |
| CN1702560A (en) | 2005-11-30 |
| KR101142868B1 (en) | 2012-05-10 |
| KR20050112333A (en) | 2005-11-30 |
| JP4669737B2 (en) | 2011-04-13 |
| TW200604760A (en) | 2006-02-01 |
| CN1702560B (en) | 2011-08-03 |
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