JPH07128867A - Solvent for washing and removing resist and production of substrate for producing electronic parts with same - Google Patents

Solvent for washing and removing resist and production of substrate for producing electronic parts with same

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Publication number
JPH07128867A
JPH07128867A JP15724893A JP15724893A JPH07128867A JP H07128867 A JPH07128867 A JP H07128867A JP 15724893 A JP15724893 A JP 15724893A JP 15724893 A JP15724893 A JP 15724893A JP H07128867 A JPH07128867 A JP H07128867A
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Prior art keywords
solvent
resist
substrate
propylene glycol
electronic parts
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JP15724893A
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Japanese (ja)
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JP3248781B2 (en )
Inventor
Kenji Maruyama
Toshimasa Nakayama
Hidekatsu Obara
Isato Ono
Koichi Takahashi
Nobuo Tokutake
寿昌 中山
健治 丸山
勇人 大野
秀克 小原
信生 徳竹
浩一 高橋
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Tokyo Ohka Kogyo Co Ltd
東京応化工業株式会社
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Abstract

PURPOSE: To provide a solvent excellent in resist dissolving power and having high safety and aging stability of the dissolving power and to efficiently obtain a high quality substrate for producing electronic parts by using the solvent.
CONSTITUTION: This solvent is a mixed solvent. contg. 50-80wt.% propylene glycol monoalkyl ether and 20-50wt.% mixture of butyl acetate with ethyl lactate or mixture of butyl acetate with ethyl lactate and propylene glycol monoalkyl ether acetate. A coating material for forming a resist is applied to a substrate, the unnecessary parts of the coating material sticking to the peripheral part, edge and rear sie of the substrate are removed with the solvent and the coating material is dried to produce the objective substrate for producing electronic parts.
COPYRIGHT: (C)1995,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、レジスト洗浄除去用溶剤及びそれを使用する電子部品製造用基材の製造方法に関するものである。 The present invention relates to a method for manufacturing the electronic component manufacturing substrate using a solvent and it resist washed away. さらに詳しくいえば、本発明は、特に半導体素子などの微細加工に使用されるウエハーなどの基材上のレジストにおける、基材の縁辺部及び裏面部の不要のレジスト分を洗浄除去するためのレジスト洗浄除去用溶剤、及びそれを用いてウエハーなどの基材に施されたレジストの前記縁辺部などにおける不要分を洗浄除去して高品質の電子部品製造用基材を簡単かつ効率的に製造する方法に関するものである。 More particularly, the present invention is a resist for the resist on the substrate such as wafer, washing away the resist portion of unnecessary edge portion and the rear surface portion of the substrate to be particularly used for fine processing such as semiconductor devices washing removal solvent, and to produce simply and efficiently by washing away the unnecessary components high-quality electronic component manufacturing substrate for in such the edge portion of the resist applied to a substrate such as a wafer using the same the method relates.

【0002】 [0002]

【従来の技術】従来、ウエハーなどの基材にスピンナーなどによりレジストを塗布する方法においては、遠心力によりレジストが拡散し、図1に示すように基材中心部は均一な膜厚が得られるが、基材の周辺部においては中心部に比し厚膜となったり、また基材の縁辺部や裏面部にもレジストが付着する。 Conventionally, in the method of applying the resist due spinner substrate such as a wafer, a resist is diffused by centrifugal force, the substrate center uniform film thickness can be obtained as shown in FIG. 1 but may become a thick film compared to the central portion in the peripheral portion of the substrate, also resist adheres to edge portion and the rear surface portion of the substrate. このようなレジストは次工程の熱処理によってもろくなり、基材の搬送中に小鱗片状に剥離し、これが装置内のゴミ発生の原因になったり、 Such registration is made brittle by heat treatment in the subsequent step, it is peeled in a small flake during transport of the substrate, which may become a cause of dust generation in the device,
基材上のレジスト表面に付着し、高品質の半導体素子を製造する上で大きな問題となっている。 Adhering to the resist surface on the substrate, it has become a major problem in the production of high-quality semiconductor device.

【0003】そこで、このような問題を解決するために、基材の周辺部、縁辺部及び裏面部の不要のレジスト分を洗浄除去する方法が提案されている(例えば特開昭63−69563号公報)。 [0003] To solve such problems, the peripheral portion of the substrate, edge portions and a method for cleaning and removing the resist portion of unnecessary back surface has been proposed (e.g., JP-A-63-69563 Publication). そして、洗浄除去する溶剤としては従来より種々の溶剤が用いられている。 Then, as the solvent removed by washing and various solvents it has been conventionally used. 該溶剤としては、エチレングリコールモノエチルエーテル、エチレングリコールモノエチルエーテルアセテート、プロピレングリコールアルキルエーテル、プロピレングリコールアルキルエーテルアセテートなどのグリコール誘導体、アセトン、メチルエチルケトン、メチルブチルケトン、シクロヘキサンなどのケトン類、乳酸メチル、乳酸エチル、酢酸メチル、酢酸エチル、酢酸ブチルなどのエステル類などが挙げられる。 The solution agent, ethylene glycol monoethyl ether, ethylene glycol monoethyl ether acetate, propylene glycol alkyl ethers, glycol derivatives such as propylene glycol alkyl ether acetates, acetone, methyl ethyl ketone, methyl butyl ketone and cyclohexane, methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, esters such as butyl acetate.

【0004】しかしながら、これらはいずれもエステル化度の高いキノンジアジド系感光性物質を含有して成るポジ型ホトレジストに対する溶解性が良好でなく、スピンナーカップ洗浄時に残さが残留したり、析出物が生じたりすることの原因となる、乾燥性が高い溶剤を裏面洗浄に使用した場合には基板が冷却されるために膜厚のバラツキを生じる、乾燥性が低い溶剤を使用した場合にはウエハー端面の洗浄性が良好でなく、カップ洗浄後の乾燥性が良好でないために使用しにくいなどの不利がある。 However, these are not soluble good for positive photoresist comprising a high quinonediazide based photosensitive substance both esterification degree, or residual left at spinner cup cleaning, precipitates or caused causes to the substrate in the case where the drying property high solvent used for the back surface cleaning results in a variation in the film thickness to be cooled, when the drying property using low solvent cleaning of the wafer end face sex is not good drying property after cup cleaning the disadvantage such as difficult to use for not good. その上、エチレングリコール誘導体系溶剤は毒性の問題があり、また、アセトンやメチルエチルケトンなどは引火点が低く、作業性が悪いという欠点がある。 Moreover, ethylene glycol derivative-based solvent has toxicity problems, also, such as acetone or methyl ethyl ketone has a low flash point, there is a disadvantage of poor workability. さらに、プロピレングリコールアルキルエーテルアセテートを含有した溶剤を使用したレジスト洗浄除去用溶剤も知られているが(特公平4−49938号公報)、このものは溶解性が良好でないという欠点がある。 Furthermore, known also resist wash removal solvent using a solvent containing propylene glycol alkyl ether acetates (KOKOKU 4-49938 JP), this compound has the drawback of solubility is not good.

【0005】 [0005]

【発明が解決しようとする課題】本発明は、従来のレジスト洗浄除去用溶剤のもつ欠点を克服し、レジストの溶解性に優れ、極めて安全性に優れ、しかも溶解性が経時的に安定していて残さや析出物を生じることのないレジスト洗浄除去用溶剤、及びこの溶剤を用いて高品質の電子部品製造用基材を簡単に効率的に製造する方法を提供することを目的としてなされたものである。 [0008] The present invention overcomes the disadvantages associated with conventional resist wash removal solvent, excellent in solubility of the resist, extremely excellent in safety, moreover solubility stable over time It was made for the purpose Te left and precipitates that no resist wash removal solvent to produce, and to provide a method for easily and efficiently producing high-quality electronic component manufacturing substrate using the solvent it is.

【0006】 [0006]

【課題を解決するための手段】本発明者らは、前記の好ましい性質を有するレジスト洗浄除去用溶剤を開発すべく鋭意研究を重ねた結果、特定の溶剤を特定量の割合で混合して成る混合溶剤がその目的に適合しうることを見出し、この知見に基づいて本発明を完成するに至った。 The present inventors have SUMMARY OF THE INVENTION As a result of intensive research to develop a resist wash removal solvent having favorable properties described above, comprising mixing a specific solvent in a ratio of specified amounts It found that mixed solvent can be adapted to the purpose, and have completed the present invention based on this finding.

【0007】すなわち、本発明は、(A)プロピレングリコールモノアルキルエーテルの中から選ばれた少なくとも1種50〜80重量%と、(B)酢酸ブチル、乳酸エチル及びプロピレングリコールモノアルキルエーテルアセテートの中から選ばれた少なくとも2種との混合物20〜50重量%から成るレジスト洗浄除去用溶剤及びスピンナーによりレジスト形成用塗布物を基材に塗布し、次いで基材の周辺部、縁辺部及び裏面部に付着した不要のレジスト形成用塗布物を、このレジスト洗浄除去用溶剤であらかじめ除去したのち、乾燥処理することを特徴とする電子部品製造用基材の製造方法を提供するものである。 Accordingly, the present invention is, (A) at least one 50 to 80 wt% selected from among propylene glycol monoalkyl ether, (B) butyl acetate, in ethyl lactate and propylene glycol monoalkyl ether acetate the resist-forming coating was applied to the substrate by at least two resist wash removal solvent and spinner consists of a mixture of 20 to 50 wt% of selected from, then the peripheral portion of the substrate, the edge portion and the rear surface portion unwanted resist-forming coating substance attached, the resist washing after previously removed by removal solvent, there is provided a method of manufacturing an electronic parts manufacturing base, characterized in that the drying process.

【0008】本発明溶剤においては、(A)成分としてプロピレングリコールモノアルキルエーテルが用いられる。 [0008] In the present invention solvents, propylene glycol monoalkyl ether is used as component (A). 該プロピレングリコールモノアルキルエーテルとしては、そのアルキル基が低級アルキル基であるもの、例えばプロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル、プロピレングリコールモノプロピルエーテル、プロピレングリコールモノブチルエーテルなどを好ましく挙げることができるが、 As the propylene glycol monoalkyl ethers, those in which the alkyl group is lower alkyl group, such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, although propylene glycol monobutyl ether can be a preferably exemplified ,
これらの中で特にプロピレングリコールモノメチルエーテルが好適である。 In particular propylene glycol monomethyl ether. Among these are preferred. この(A)成分のプロピレングリコールモノアルキルエーテルは単独で用いてもよいし、2 Propylene glycol monoalkyl ether of the component (A) may be used alone, 2
種以上を組み合わせて用いてもよい。 It may be used in combination with at least species.

【0009】また、溶剤においては、(B)成分として、酢酸ブチル、乳酸エチル及びプロピレングリコールモノアルキルエーテルアセテートの中から選ばれた少なくとも2種の混合物が用いられる。 Further, in the solvent, as the component (B), butyl acetate, a mixture of at least two selected from among ethyl lactate and propylene glycol monoalkyl ether acetate is used. このプロピレングリコールモノアルキルエーテルアセテートとしては、そのアルキル基が低級アルキル基であるもの、例えばプロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、プロピレングリコールモノプロピルエーテルアセテート、プロピレングリコールモノブチルエーテルアセテートなどを挙げることができるが、これらの中で特にプロピレングリコールモノメチルエーテルアセテートが好適である。 As the propylene glycol monoalkyl ether acetates, include those in which the alkyl group is lower alkyl group, such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, and propylene glycol monomethyl ether acetate can, but particularly propylene glycol monomethyl ether acetate. among these are preferred.
このプロピレングリコールモノアルキルエーテルアセテートは単独で用いてもよいし、2種以上を組み合わせて用いてもよい。 It The propylene glycol monoalkyl ether acetate may be used singly or may be used in combination of two or more.

【0010】本発明溶剤においては、前記(A)成分と(B)成分との配合割合は、その合計重量に基づき(A)成分が50〜80重量%及び(B)成分が20〜 [0010] In the present invention solvents, the mixing ratio of the component (A) and component (B), based on the total weight of component (A) is 50 to 80% by weight and component (B) 20
50重量%の範囲にあることが必要である。 It should be in the range of 50 wt%. この割合が前記範囲を逸脱すると、溶解性に優れたレジスト洗浄除去用溶剤が得られない。 When this ratio is outside the above range, excellent resist wash removal solvent solubility can not be obtained.

【0011】本発明溶剤には、前記(A)成分及び(B)成分以外に、所望に応じその他の溶剤を併用することもでき、それによりレジストに対する溶解能を制御することができる。 [0011] The present invention solvent, in addition to the components (A) and component (B) can also be used in combination other solvents as desired, thereby controlling the dissolving ability for resist. この併用溶剤としては、例えばメチルエチルケトン、メチルプロピルケトン、メチルイソブチルケトンなどのケトン系溶剤、酢酸エチル、酢酸プロピル、酢酸アミル、3‐メトキシプロピオン酸メチル、 As the solvent used in combination, such as methyl ethyl ketone, methyl propyl ketone, ketone solvents such as methyl isobutyl ketone, ethyl acetate, propyl acetate, amyl acetate, methyl 3-methoxypropionate,
3‐エキシプロピオン酸メチル、3‐エトキシプロピオン酸エチル、、4‐メトキシ酪酸エチル、4‐エトキシ酪酸エチル、乳酸メチルなどのエステル系溶剤を挙げることができる。 3 Ekishipuropion methyl, ethyl 3-ethoxypropionate ,, 4-methoxy ethyl butyrate, ethyl 4-ethoxy-butyric acid, and ester solvents such as methyl lactate. これらの溶剤は単独で用いてもよいし、 It may be used those solvents alone,
2種以上を組み合わせて用いてもよい。 It may be used in combination of two or more. また、これらの溶剤を使用する場合の配合量としては、溶剤全重量に基づき30重量%未満が好ましい。 As the amount of using these solvents, less than 30% by weight, based on the solvent total weight is preferable.

【0012】本発明溶剤が適用されるレジストについては特に制限はなく、通常使用されているものでよいが、 [0012] For resists the present invention the solvent is applied is not particularly limited, and may but those which are usually used,
好ましいものとしては、感光性物質と被膜形成物質とから成り、かつアルカリ水溶液により現像できるものを挙げることができる。 Preferred are composed of a photosensitive material and a film forming material, and may include those which can be developed by an alkaline aqueous solution.

【0013】特に有利なレジストは、最近の超微細加工に十分適応しうる諸要求特性を備えたポジ型ホトレジストである。 [0013] Particularly advantageous resist is a positive photoresist having various required characteristics which can be sufficiently adapted to recent ultrafine processing. その中でも特にキノンジアジド系感光性物質と被膜形成物質とを含む組成物から成るものが好ましい。 Is preferably one made of a composition particularly comprising a quinonediazide photosensitive material and a film forming material among them.

【0014】この感光性物質としては、キノンジアジド基含有化合物、例えばオルトベンゾキノンジアジド、オルトナフトキノンジアジド、オルトアントラキノンジアジドなどのキノンジアジド類のスルホン酸とフェノール性水酸基又はアミノ基を有する化合物とを部分若しくは完全エステル化、又は部分若しくは完全アミド化したものが挙げられ、前記のフェノール性水酸基又はアミノ基を有する化合物としては、例えば2,3,4‐トリヒドロキシベンゾフェノン、2,2′,4,4′‐テトラヒドロキシベンゾフェノン、2,3,4,4′‐テトラヒドロキシベンゾフェノンなどのポリヒドロキシベンゾフェノン、あるいは没食子酸アルキル、没食子酸アリール、フェノール、p‐メトキシフェノール、ジメチルフェノール、ヒドロキ [0014] As the photosensitive material, a quinonediazide group-containing compounds such as o-benzoquinonediazide, ortho naphthoquinone diazide compound and a partial or complete ester having a sulfonic acid and a phenolic hydroxyl group or amino group of the quinonediazide such as ortho anthraquinone diazide reduction, or partial or fully amidated ones. Examples of the compound having a phenolic hydroxyl group or an amino group of the, for example 2,3,4-trihydroxy benzophenone, 2,2 ', 4,4'-tetra hydroxybenzophenone, 2,3,4,4' polyhydroxybenzophenone such tetrahydroxybenzophenone or alkyl gallate, gallic acid aryl, phenol, p- methoxyphenol, dimethylphenol, hydroxamate ン、ビスフェノールA、ナフトール、ピロカテコール、ピロガロール、ピロガロールモノメチルエーテル、ピロガロール‐1,3‐ジメチルエーテル、没食子酸、水酸基を一部残しエステル化又はエーテル化された没食子酸、アニリン、p‐アミノジフェニルアミンなどが挙げられる。 Emissions, bisphenol A, naphthol, pyrocatechol, pyrogallol, pyrogallol monomethyl ether, pyrogallol 1,3-dimethyl ether, gallic acid, partially leaving a hydroxyl group esterified or etherified gallic acid, aniline, p- aminodiphenylamine is and the like. そして、特に好ましいキノンジアジド基含有化合物は、上記したポリヒドロキシベンゾフェノンとナフトキノン‐1,2‐ジアジド‐5‐ The particularly preferred quinone diazide group-containing compound, polyhydroxy benzophenone and naphthoquinone-1,2-diazide described above -5-
スルホニルクロリド又はナフトキノン‐1,2‐ジアジド‐4‐スルホニルクロリドとの完全エステル化物や部分エステル化物であり、特に平均エステル化度が70% A fully esterified product or partial ester of sulfonyl chloride or naphthoquinone-1,2-diazide-4-sulfonyl chloride, in particular an average degree of esterification of 70%
以上のものが好ましい。 More than that is preferable.

【0015】また、被膜形成物質としては、例えばフェノール、クレゾール、キシレノールなどとアルデヒド類とから得られるノボラック樹脂、アクリル樹脂、スチレンとアクリル酸との共重合体、ヒドロキシスチレンの重合体、ポリビニルヒドロキシベンゾエート、ポリビニルヒドロキシベンザルなどのアルカリ可溶性樹脂が有効である。 [0015] As the film forming substance, such as phenol, cresol, novolak resins obtained from the like with an aldehyde xylenol, copolymers of acrylic resin, styrene and acrylic acid, polymers of hydroxystyrene, polyvinyl hydroxybenzoate , alkali-soluble resins such as polyvinyl hydroxy benzal is valid.

【0016】特に好ましいポジ型ホトレジストは、被膜形成物質としてクレゾールノボラック樹脂を用いたものであり、このクレゾールノボラック樹脂としては、低分子量域をカットした重量平均分子量が2000〜200 A particularly preferred positive photoresist is one which uses a cresol novolac resin as the film forming substance, as the cresol novolak resin, a weight average molecular weight obtained by cutting the low molecular weight region is 2000 to 200
00、好ましくは5000〜15000の範囲のものが好ましい。 00, preferably in the range of 5,000 to 15,000.

【0017】前記ポジ型ホトレジストにおいては前記した感光性物質が、被膜形成物質100重量部に対し、通常10〜40重量部、好ましくは15〜30重量部の範囲で配合される。 [0017] In the positive type photoresist the photosensitive material is, to the film forming substance 100 parts by weight, usually 10 to 40 parts by weight, preferably blended in the range of 15 to 30 parts by weight. この量が40重量部を超えると感度が著しく劣り、また10重量部未満では好ましいパターン断面形状が得にくくなる。 Sensitivity markedly inferior if this amount exceeds 40 parts by weight, also preferred pattern cross-sectional shape is difficult to obtain less than 10 parts by weight.

【0018】また、レジストには、必要に応じ、相容性のある他の染料、例えばクマリン系染料、アゾ染料などを添加してもよいし、さらに、他の添加物、例えば付加的樹脂、可塑剤、安定剤あるいは現像して得られるパターンをより一層可視的にするための着色剤、コントラスト向上剤などの慣用されているものを添加含有させることもできる。 Further, the resist, as necessary, other dyes with compatible, for example, coumarin dyes, to like may be added azo dyes, further, other additives, for example, additive resins, plasticizers, colorants for the further more stabilizers or developed to obtain the pattern visible, may contain added what is customary, such as contrast enhancing agents.

【0019】次に、前記レジスト洗浄除去用溶剤を用いた本発明の電子部品製造用基材の製造方法について説明すると、まず、スピンナーによりレジスト形成用塗布物をシリコンウエハーなどの基材に塗布し、次いで、基材の周辺部、縁辺部及び裏面部に付着した不要のレジスト形成用塗布物を前記レジスト洗浄除去用溶剤(前記本発明溶剤)であらかじめ除去したのち、乾燥処理することによって電子部品製造用基材を製造することができる。 Next, the method for manufacturing an electronic component manufacturing substrate of the present invention will be described using the resist cleaning removal solvent, first, a resist-forming coating was applied to a substrate such as a silicon wafer by a spinner and then, the peripheral portion of the substrate, after the unnecessary resist-forming coating substance attached to the edge portion and the rear surface portion is previously removed by the resist cleaning removal solvent (the present invention the solvent), the electronic component by drying it is possible to produce a preparation for substrate.
すなわち、スピンナーはスピンヘッド上で回転される回転板を有し、該回転板上にウエハーなどの基材を保持してその中心部にレジスト形成用塗布物がフィードされる。 That is, spinner has a rotary plate which is rotated on the spin head, the resist-forming coating material in the center portion to hold the substrate such as wafer to the rotary board is fed. フィードされた塗布物は回転板の遠心力によって放射方向に拡散塗布される。 Feed is coated material is diffused applied in the radial direction by the centrifugal force of the rotating plate. このようにして、基材上に塗布された該塗布物は、周辺部の膜厚が中央部の膜厚よりも大きく、また基材の縁辺部や裏面部にも該塗布物が回り込むようになる。 In this manner, the coating material applied on the substrate, the thickness of the peripheral portion is larger than the thickness of the central portion, and as the coating material from flowing in edge portion and the back surface of the substrate Become.

【0020】次いで、このような塗布物の周辺部、縁辺部及び裏面部に付着した不要なレジストを、基材を回転させながら前記した溶剤を供給することにより除去する。 [0020] then removed by the peripheral portion of such a coated product, the unnecessary resist adhering to the edge portion and the rear surface unit, supplying a solvent described above while rotating the substrate. この場合、溶剤の供給手段としては、溶剤供給ノズルにより、基材の周辺部分に溶剤を滴下したり、吹き付ける方法、有利にはバックリンスを施す方法が用いられる。 In this case, the supply means of the solvent, the solvent supply nozzle, or dropped the solvent peripheral portion of the substrate, a method of blowing, preferably a method of applying a back rinsing is used. また、溶剤の供給量は使用するレジストの種類、回転数、膜厚などにより適宜変わるが、通常は30〜50 The type of resist supply amount of the solvent to be used, the rotation speed will vary appropriately due thickness, typically 30 to 50
ml/分の範囲で選ばれる。 It is selected in the range of ml / min.

【0021】これまで、本発明溶剤の利用態様として、 [0021] In the past, as the utilization aspect of the present invention solvent,
基材上の不要なレジストの除去について説明してきたが、本発明溶剤は極めて溶解性に優れるため、スピンナーカップなどに付着して固着したレジストの洗浄除去にも有効に利用できる。 Having described the removal of unnecessary resist on the substrate, the present invention solvent is excellent very soluble, it is also effectively used in the cleaning and removing of the resist adhere and fix the like spinner cup.

【0022】 [0022]

【発明の効果】本発明のレジスト洗浄除去用溶剤は、レジストの溶解性、特に高エステル化度のキノンジアジド系感光性物質を含有してなるポジ型ホトレジストの溶解性に優れ、極めて安全性が高く、しかも溶解性が経時的に安定していて残さや析出物を生じることがないという顕著な効果を奏する。 Resist wash removal solvent of the present invention exhibits solubility of the resist is excellent in solubility of the positive photoresist comprising in particular contain quinonediazide based photosensitive material of a high degree of esterification, high very safe , yet a marked effect of solubility never produce stable over time left though and deposit.

【0023】また、本発明方法によれば、高品質の電子部品製造用基材を簡単に効率よく製造することができる。 Further, according to the present invention, it can be produced easily and efficiently high quality electronic component manufacturing substrate.

【0024】 [0024]

【実施例】次に実施例により本発明をさらに詳細に説明するが、本発明はこれらの例によってなんら限定されるものではない。 EXAMPLES Next a more detailed description of the present invention through examples, but the present invention is not intended to restrict the scope.

【0025】実施例1〜5、比較例1〜4 3インチシリコンウエハー上に、2,3,4,4′‐テトラヒドロキシベンゾフェノン1モルとナフトキノン‐ [0025] Examples 1-5, Comparative Examples 1-4 3 inches silicon wafer, 2,3,4,4-tetra hydroxybenzophenone 1 mol of naphthoquinone -
1,2‐ジアジド‐5‐スルホニルクロリド4モルとのエステル化反応生成物(平均エステル化度90%)7. 1,2-diazide-5-sulfonyl chloride 4 esterification reaction product of moles (average degree of esterification 90%) 7.
5g及びクレゾールノボラック樹脂30gをエチレングリコールモノエチルエーテルアセテート70gに溶解して得られたポジ型ホトレジスト溶液を、スピンナーにより、乾燥膜厚が10μmになるように塗布したのち、ホットプレート上で、120℃で90秒間加熱することによって、表面にレジスト膜が形成されたシリコンウエハーを9枚調製した。 The positive photoresist solution obtained was 5g and cresol novolak resin 30g were dissolved in ethylene glycol monoethyl ether acetate 70 g, by a spinner, after which the dry film thickness was applied so as to 10 [mu] m, on a hot plate, 120 ° C. in by heating for 90 seconds, a silicon wafer having a resist film formed on the surface were prepared nine.

【0026】次いで、表1に示す各溶剤をビーカーに入れ、上記9枚のシリコンウエハーをそれぞれの溶剤に浸せきし、レジスト膜がシリコンウエハー表面から完全に溶解除去される時間を測定した結果を表1に示した。 [0026] Then, display the results of putting each solvent shown in Table 1 to a beaker and immersed the nine silicon wafers to each solvent, the resist film was measured time to be completely dissolved and removed from the silicon wafer surface It is shown in 1.

【0027】また、上記したポジ型ホトレジスト溶液を6インチシリコンウエハー上に、回転塗布装置(東京応化工業社製TR‐6132)を用いて、3000rp Further, the above-mentioned positive-type photoresist solution on a 6-inch silicon wafer using a spin coater (made by Tokyo Ohka Kogyo Co., Ltd. TR-6132), 3000rp
m、20秒間で塗布し、膜厚1.3μmの塗布膜を得た。 It was coated with m, 20 seconds to obtain a coating film having a thickness of 1.3 .mu.m. 次いで、回転数を1000rpmに下げ、同装置のウエハー裏面噴射用洗浄ノズルから、表1に示す各溶剤を40ml/minで、2秒間、5秒間及び10秒間噴射し、それぞれの噴射時間に対するシリコンウエハーのエッジ部レジストの溶解状態について調べた結果を表1 Then, lowering the rotational speed to 1000 rpm, the cleaning nozzle for wafer backside injection of the same device, each solvent shown in Table 1 in 40 ml / min, 2 seconds, and injection for 5 seconds and 10 seconds, a silicon wafer for each injection time Table 1 the results of examining the dissolved state of the edge portion resist
に示した。 It was shown to. なお、エッジ部レジストとはシリコンウエハーの周辺部、縁辺部及び裏面部に付着したレジストを意味する。 Note that the edge portion resists the peripheral portion of the silicon wafer, means a resist adhering to the edge portion and the rear surface portion.

【0028】 [0028]

【表1】 [Table 1]

【0029】[注]表中の各略称及び各記号は以下のとおりの意味を有する。 [0029] Note: Each abbreviations and symbols in the tables have the meanings as follows. PGME:プロピレングリコールモノメチルエーテル PGMEA:プロピレングリコールモノメチルエーテルアセテート EL:乳酸エチル PuAc:酢酸ブチル EGA:エチレングリコールモノエチルエーテルアセテート ○:エッジ部レジストが完全に溶解している。 PGME: Propylene glycol monomethyl ether PGMEA: propylene glycol monomethyl ether acetate EL: ethyl lactate PuAc: butyl acetate EGA: ethylene glycol monoethyl ether acetate ○: edges resist is completely dissolved. △:エッジ部レジストの薄膜残りが部分的に確認される。 △: film remaining edges resist is confirmed partially. ×:エッジ部レジストの薄膜残りが確認される。 ×: film remaining edges resist is confirmed.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】スピンナーによりレジストをウエハーに塗布した際のウエハー周辺付近の状態を示す断面図。 Figure 1 is a sectional view showing a state of the vicinity of the wafer periphery when coated on a wafer to the resist by a spinner.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 ウエハー 2 レジスト 3 ウエハー周辺部のレジスト 4 ウエハー縁辺部のレジスト 5 ウエハー裏面部のレジスト 1 resist the resist 5 wafer back surface of the resist 4 wafer edge portion of the wafer 2 resist 3 wafer peripheral portion

フロントページの続き (51)Int.Cl. 6識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/304 341 L (72)発明者 徳竹 信生 神奈川県川崎市中原区中丸子150番地 東 京応化工業株式会社内 (72)発明者 小原 秀克 神奈川県川崎市中原区中丸子150番地 東 京応化工業株式会社内 (72)発明者 中山 寿昌 神奈川県川崎市中原区中丸子150番地 東 京応化工業株式会社内 Of the front page Continued (51) Int.Cl. 6 identification symbol Agency in the docket number FI technology display location H01L 21/304 341 L (72) inventor Tokutake Nobuo Nakahara-ku, Nakamaruko 150 address Kyoto Azuma Kawasaki City, Kanagawa Prefecture Ohka Kogyo stock within the company (72) inventor Hidekatsu Ohara Kanagawa Prefecture, Nakahara-ku, Kawasaki, Nakamaruko 150 address Tokyo Ohka in the industrial Co., Ltd. (72) inventor Nakayama KotobukiAkira Kanagawa Prefecture, Nakahara-ku, Kawasaki, Nakamaruko 150 address Tokyo Ohka in the industrial Co., Ltd.

Claims (2)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 (A)プロピレングリコールモノアルキルエーテルの中から選ばれた少なくとも1種50〜80 1. A (A) at least one selected from among propylene glycol monoalkyl ether 50-80
    重量%と、(B)酢酸ブチル、乳酸エチル及びプロピレングリコールモノアルキルエーテルアセテートの中から選ばれた少なくとも2種の混合物20〜50重量%から成るレジスト洗浄除去用溶剤。 Wt% and, (B) butyl acetate, ethyl lactate and propylene glycol least two resist wash removal solvent comprising a mixture of 20 to 50 wt% of which is selected from among monoalkyl ether acetate.
  2. 【請求項2】 スピンナーによりレジスト形成用塗布物を基材に塗布し、次いで、基材の周辺部、縁辺部及び裏面部に付着した不要のレジスト形成用塗布物を、請求項1記載のレジスト洗浄除去用溶剤であらかじめ除去したのち、乾燥処理することを特徴とする電子部品製造用基材の製造方法。 2. A resist-forming coating material applied to the substrate by a spinner and then, the peripheral portion of the substrate, the unnecessary resist-forming coating substance attached to the edge portion and the rear surface portion, the resist of claim 1, wherein After previously removed by washing removal solvent, drying method for manufacturing an electronic component manufacturing substrate, which comprises.
JP15724893A 1993-06-28 1993-06-28 Method for manufacturing an electronic component manufacturing substrate using a solvent and it resist wash removal Expired - Fee Related JP3248781B2 (en)

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WO2001048555A1 (en) * 1999-12-24 2001-07-05 Samsung Electronics Co., Ltd. Thinner for rinsing photoresist and method of treating photoresist layer
JP2005128529A (en) * 2003-10-20 2005-05-19 Dongjin Semichem Co Ltd Thinner composition for removing photoresist
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WO2001048555A1 (en) * 1999-12-24 2001-07-05 Samsung Electronics Co., Ltd. Thinner for rinsing photoresist and method of treating photoresist layer
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