TWI403610B - 在實質上封閉迴路方法及系統中之多晶矽的製造 - Google Patents
在實質上封閉迴路方法及系統中之多晶矽的製造 Download PDFInfo
- Publication number
- TWI403610B TWI403610B TW100135943A TW100135943A TWI403610B TW I403610 B TWI403610 B TW I403610B TW 100135943 A TW100135943 A TW 100135943A TW 100135943 A TW100135943 A TW 100135943A TW I403610 B TWI403610 B TW I403610B
- Authority
- TW
- Taiwan
- Prior art keywords
- hydrogen
- trichloromethane
- reactor
- tetrachloride
- fluidized bed
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract description 34
- 230000008569 process Effects 0.000 title abstract description 17
- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract description 10
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical group Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000005052 trichlorosilane Substances 0.000 claims abstract description 16
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 127
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical group ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 118
- 239000001257 hydrogen Substances 0.000 claims description 117
- 229910052739 hydrogen Inorganic materials 0.000 claims description 117
- 229960001701 chloroform Drugs 0.000 claims description 116
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 100
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 100
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 99
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 95
- IREVRWRNACELSM-UHFFFAOYSA-J ruthenium(4+);tetrachloride Chemical compound Cl[Ru](Cl)(Cl)Cl IREVRWRNACELSM-UHFFFAOYSA-J 0.000 claims description 63
- 238000005984 hydrogenation reaction Methods 0.000 claims description 48
- 238000000746 purification Methods 0.000 claims description 42
- 238000000926 separation method Methods 0.000 claims description 33
- 238000005660 chlorination reaction Methods 0.000 claims description 32
- 229910052732 germanium Inorganic materials 0.000 claims description 29
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 29
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims description 27
- 150000002431 hydrogen Chemical class 0.000 claims description 25
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 20
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 15
- 229910052707 ruthenium Inorganic materials 0.000 claims description 15
- KHPNGCXABLTQFJ-UHFFFAOYSA-N 1,1,1-trichlorodecane Chemical compound CCCCCCCCCC(Cl)(Cl)Cl KHPNGCXABLTQFJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000003134 recirculating effect Effects 0.000 claims description 9
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 claims 1
- 239000000470 constituent Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 27
- HBBBDGWCSBWWKP-UHFFFAOYSA-J tetrachloroantimony Chemical compound Cl[Sb](Cl)(Cl)Cl HBBBDGWCSBWWKP-UHFFFAOYSA-J 0.000 description 18
- 239000000428 dust Substances 0.000 description 15
- 239000000047 product Substances 0.000 description 15
- 239000012535 impurity Substances 0.000 description 14
- 239000002245 particle Substances 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 13
- 239000001307 helium Substances 0.000 description 11
- 229910052734 helium Inorganic materials 0.000 description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 11
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 8
- 238000004821 distillation Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 229910003902 SiCl 4 Inorganic materials 0.000 description 5
- -1 SiO 2 ) Chemical compound 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000032258 transport Effects 0.000 description 5
- ZTEHOZMYMCEYRM-UHFFFAOYSA-N 1-chlorodecane Chemical compound CCCCCCCCCCCl ZTEHOZMYMCEYRM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000005243 fluidization Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- IEPTVZPDPRCAKM-UHFFFAOYSA-N [He].Cl.Cl.Cl.Cl Chemical compound [He].Cl.Cl.Cl.Cl IEPTVZPDPRCAKM-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000005909 Kieselgur Substances 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 2
- 229910001626 barium chloride Inorganic materials 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 235000010755 mineral Nutrition 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical class C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 230000000153 supplemental effect Effects 0.000 description 2
- IXADHCVQNVXURI-UHFFFAOYSA-N 1,1-dichlorodecane Chemical compound CCCCCCCCCC(Cl)Cl IXADHCVQNVXURI-UHFFFAOYSA-N 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910000792 Monel Inorganic materials 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XEFQLINVKFYRCS-UHFFFAOYSA-N Triclosan Chemical compound OC1=CC(Cl)=CC=C1OC1=CC=C(Cl)C=C1Cl XEFQLINVKFYRCS-UHFFFAOYSA-N 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- SWQJXJOGLNCZEY-BJUDXGSMSA-N helium-3 atom Chemical compound [3He] SWQJXJOGLNCZEY-BJUDXGSMSA-N 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000009469 supplementation Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229960003500 triclosan Drugs 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
- C01B33/039—Purification by conversion of the silicon into a compound, optional purification of the compound, and reconversion into silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Catalysts (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/910,540 US20120100061A1 (en) | 2010-10-22 | 2010-10-22 | Production of Polycrystalline Silicon in Substantially Closed-loop Processes |
| US12/910,553 US8449848B2 (en) | 2010-10-22 | 2010-10-22 | Production of polycrystalline silicon in substantially closed-loop systems |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201221685A TW201221685A (en) | 2012-06-01 |
| TWI403610B true TWI403610B (zh) | 2013-08-01 |
Family
ID=45975555
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100135943A TWI403610B (zh) | 2010-10-22 | 2011-10-04 | 在實質上封閉迴路方法及系統中之多晶矽的製造 |
| TW102107553A TW201329280A (zh) | 2010-10-22 | 2011-10-04 | 在實質上封閉迴路方法及系統中之多晶矽的製造 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102107553A TW201329280A (zh) | 2010-10-22 | 2011-10-04 | 在實質上封閉迴路方法及系統中之多晶矽的製造 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP2630081B1 (https=) |
| JP (1) | JP5946835B2 (https=) |
| KR (1) | KR101948332B1 (https=) |
| CN (2) | CN107555438A (https=) |
| BR (1) | BR112013008586A2 (https=) |
| TW (2) | TWI403610B (https=) |
| WO (1) | WO2012054170A1 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101452354B1 (ko) * | 2014-01-24 | 2014-10-22 | 한화케미칼 주식회사 | 폐가스의 정제방법 및 정제장치 |
| WO2015111886A1 (ko) * | 2014-01-24 | 2015-07-30 | 한화케미칼 주식회사 | 폐가스의 정제방법 및 정제장치 |
| KR101515117B1 (ko) * | 2014-01-24 | 2015-04-24 | 한화케미칼 주식회사 | 폐가스의 정제방법 및 정제장치 |
| CN104003402B (zh) * | 2014-05-30 | 2016-08-24 | 中国恩菲工程技术有限公司 | 三氯氢硅的提纯方法 |
| KR102009929B1 (ko) * | 2015-09-15 | 2019-08-12 | 주식회사 엘지화학 | 트리클로로실란 제조방법 |
| US10953469B2 (en) * | 2016-04-21 | 2021-03-23 | Tokuyama Corporation | Method of producing metal powder |
| DE102017125232A1 (de) * | 2017-10-27 | 2019-05-02 | Nexwafe Gmbh | Verfahren und Vorrichtung zur kontinuierlichen Gasphasenabscheidung von Silizium auf Substraten |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW479268B (en) * | 1999-10-21 | 2002-03-11 | Applied Materials Inc | Method for in-situ cleaning of surfaces in a substrate processing chamber |
| TW200918450A (en) * | 2006-11-14 | 2009-05-01 | Mitsubishi Materials Corp | Method for producing polycrystal silicon and polycrystal silicon production equipment |
| TW201009138A (en) * | 2008-06-30 | 2010-03-01 | Memc Electronic Materials | Fluidized bed reactor systems and methods for reducing the deposition of silicon on reactor walls |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4092446A (en) * | 1974-07-31 | 1978-05-30 | Texas Instruments Incorporated | Process of refining impure silicon to produce purified electronic grade silicon |
| GB2028289B (en) * | 1978-08-18 | 1982-09-02 | Schumacher Co J C | Producing silicon |
| US4676967A (en) | 1978-08-23 | 1987-06-30 | Union Carbide Corporation | High purity silane and silicon production |
| DE3024319C2 (de) * | 1980-06-27 | 1983-07-21 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Kontinuierliches Verfahren zur Herstellung von Trichlorsilan |
| US4526769A (en) | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
| US5871705A (en) | 1996-09-19 | 1999-02-16 | Tokuyama Corporation | Process for producing trichlorosilane |
| JPH1149508A (ja) * | 1997-06-03 | 1999-02-23 | Tokuyama Corp | 多結晶シリコンの廃棄物の少ない製造方法 |
| NO20033207D0 (no) * | 2002-07-31 | 2003-07-15 | Per Kristian Egeberg | Fremgangsmåte og reaktor for fremstilling av höyrent silisium, samt anvendelse av fremgangsmåten og reaktoren ved fremstilling av höyrentsilisium fra uraffinert silisium |
| EP2021279A2 (en) * | 2006-04-13 | 2009-02-11 | Cabot Corporation | Production of silicon through a closed-loop process |
| US7935327B2 (en) * | 2006-08-30 | 2011-05-03 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor integrated into a siemens-type process |
| CN101497442B (zh) * | 2008-01-31 | 2012-07-04 | 桑中生 | 一种多晶硅的制备方法 |
| US8187361B2 (en) * | 2009-07-02 | 2012-05-29 | America Air Liquide, Inc. | Effluent gas recovery system in polysilicon and silane plants |
| CN102030329B (zh) * | 2009-09-29 | 2012-10-03 | 重庆大全新能源有限公司 | 一种多晶硅生产装置及工艺 |
| DE102010000981A1 (de) * | 2010-01-18 | 2011-07-21 | Evonik Degussa GmbH, 45128 | Closed loop-Verfahren zur Herstellung von Trichlorsilan aus metallurgischem Silicium |
| CN102180467B (zh) * | 2010-12-24 | 2012-12-26 | 江苏中能硅业科技发展有限公司 | Gcl法多晶硅生产方法 |
-
2011
- 2011-09-22 KR KR1020137010094A patent/KR101948332B1/ko active Active
- 2011-09-22 JP JP2013534917A patent/JP5946835B2/ja active Active
- 2011-09-22 WO PCT/US2011/052691 patent/WO2012054170A1/en not_active Ceased
- 2011-09-22 CN CN201710761183.2A patent/CN107555438A/zh active Pending
- 2011-09-22 BR BR112013008586A patent/BR112013008586A2/pt not_active IP Right Cessation
- 2011-09-22 CN CN201180049322XA patent/CN103153855A/zh active Pending
- 2011-09-22 EP EP11761811.6A patent/EP2630081B1/en active Active
- 2011-10-04 TW TW100135943A patent/TWI403610B/zh active
- 2011-10-04 TW TW102107553A patent/TW201329280A/zh unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW479268B (en) * | 1999-10-21 | 2002-03-11 | Applied Materials Inc | Method for in-situ cleaning of surfaces in a substrate processing chamber |
| TW200918450A (en) * | 2006-11-14 | 2009-05-01 | Mitsubishi Materials Corp | Method for producing polycrystal silicon and polycrystal silicon production equipment |
| TW201009138A (en) * | 2008-06-30 | 2010-03-01 | Memc Electronic Materials | Fluidized bed reactor systems and methods for reducing the deposition of silicon on reactor walls |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012054170A1 (en) | 2012-04-26 |
| EP2630081B1 (en) | 2016-04-20 |
| KR101948332B1 (ko) | 2019-02-14 |
| KR20130138357A (ko) | 2013-12-18 |
| CN103153855A (zh) | 2013-06-12 |
| JP2013540095A (ja) | 2013-10-31 |
| CN107555438A (zh) | 2018-01-09 |
| BR112013008586A2 (pt) | 2017-07-25 |
| JP5946835B2 (ja) | 2016-07-06 |
| EP2630081A1 (en) | 2013-08-28 |
| TW201329280A (zh) | 2013-07-16 |
| TW201221685A (en) | 2012-06-01 |
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