TWI402902B - Substrate treating apparatus and substrate treating method - Google Patents
Substrate treating apparatus and substrate treating method Download PDFInfo
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- TWI402902B TWI402902B TW097135432A TW97135432A TWI402902B TW I402902 B TWI402902 B TW I402902B TW 097135432 A TW097135432 A TW 097135432A TW 97135432 A TW97135432 A TW 97135432A TW I402902 B TWI402902 B TW I402902B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
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Description
本發明係關於利用處理液對半導體晶圓或液晶顯示裝置之玻璃基板(以下，簡稱為基板)進行處理之基板處理裝置及基板處理方法。The present invention relates to a substrate processing apparatus and a substrate processing method for processing a semiconductor wafer or a glass substrate (hereinafter simply referred to as a substrate) of a liquid crystal display device using a processing liquid.
先前，作為此種裝置，有以下裝置：具有多個處理槽、以及跨及各處理槽之用於搬運基板之搬運機構，各處理槽中利用不同之處理液依序進行處理(參照例如日本專利特開平10-22257號公報(圖11))。如此之裝置中，例如，於第一處理槽中藉由BHF(緩衝氫氟酸)對表面進行輕度蝕刻，於第二處理槽中利用純水清洗，於第三處理槽中利用IPA(異丙醇)取代純水，於第四處理槽中依序移動基板且進行一系列處理，以此形成溶劑蒸氣環境而使基板乾燥。Conventionally, as such a device, there is a device having a plurality of processing tanks and a transport mechanism for transporting substrates across the processing tanks, and each processing tank is sequentially processed by using different processing liquids (refer to, for example, Japanese patents) JP-A-10-22257 (Fig. 11)). In such a device, for example, the surface is lightly etched by BHF (buffered hydrofluoric acid) in the first treatment tank, cleaned with pure water in the second treatment tank, and IPA is used in the third treatment tank. Instead of pure water, propanol is sequentially moved in the fourth treatment tank and subjected to a series of treatments to form a solvent vapor environment to dry the substrate.
然而，於具有上述構成之先前例中，存在以下問題。However, in the prior example having the above configuration, there are the following problems.
亦即，先前之裝置存在以下問題：當基板上形成有微細圖案之情況下，因殘留於其間之純水之表面張力，而使基板於處理槽間移動，此時，形成於基板上之微細圖案可能會產生倒塌。That is, the prior apparatus has the following problem: in the case where a fine pattern is formed on the substrate, the substrate is moved between the processing tanks due to the surface tension of the pure water remaining therebetween, and at this time, the fineness formed on the substrate The pattern may collapse.
本發明係鑒於上述情況而成者，其目的在於提供一種能夠藉由提高純水之除去率而防止形成於基板上之微細圖案倒塌之基板處理裝置及基板處理方法。The present invention has been made in view of the above circumstances, and an object thereof is to provide a substrate processing apparatus and a substrate processing method capable of preventing a fine pattern formed on a substrate from collapsing by increasing the removal rate of pure water.
本發明為了達成上述目的而採用如下之構成。In order to achieve the above object, the present invention adopts the following constitution.
本發明係利用處理液對基板進行處理之基板處理裝置，上述裝置包括以下要素：處理槽，儲留處理液，可收容基板；保持機構，保持基板，可跨及上述處理槽內之處理位置與位於上述處理槽上方之上方位置而移動；第一供給手段，向上述處理槽供給純水；第二供給手段，向上述處理槽供給液體之水溶性有機溶劑；第三供給手段，向上述處理槽供給液體之非水溶性有機溶劑；控制手段，於藉由上述保持機構而將基板移動至處理位置之狀態下，使上述第一供給手段向上述處理槽供給純水，而對基板進行純水清洗處理，使上述第二供給手段向上述處理槽供給水溶性有機溶劑而將上述處理槽內之純水取代成水溶性有機溶劑，且利用水溶性有機溶劑對基板進行處理，使上述第三供給手段向上述處理槽供給非水溶性有機溶劑，同時，使上述第二供給手段向上述處理槽供給水溶性有機溶劑而利用水溶性有機溶劑以及非水溶性有機溶劑之混合液對基板進行處理之後，使上述保持機構移動至上方位置。The present invention relates to a substrate processing apparatus for processing a substrate by using a processing liquid, wherein the apparatus includes the following elements: a processing tank, a storage processing liquid, and a substrate; a holding mechanism, a holding substrate, and a processing position in the processing tank; Moving at an upper position above the treatment tank; the first supply means supplies pure water to the treatment tank; the second supply means supplies a liquid water-soluble organic solvent to the treatment tank; and the third supply means flows to the treatment tank a water-insoluble organic solvent that supplies a liquid; and a control means that the first supply means supplies pure water to the processing tank while the substrate is moved to the processing position by the holding means, and the substrate is subjected to pure water cleaning The second supply means supplies the water-soluble organic solvent to the treatment tank, replaces the pure water in the treatment tank with a water-soluble organic solvent, and treats the substrate with a water-soluble organic solvent to make the third supply means Supplying the water-insoluble organic solvent to the treatment tank, and simultaneously applying the second supply means to the above After treatment tank feeding the water-soluble organic solvent on the substrate is treated with a mixture of a water-soluble organic solvent and the water-insoluble organic solvent, so that the holding means is moved to the upper position.
根據本發明，控制手段，於藉由保持機構而將基板移動至處理位置之狀態下，使第一供給手段向處理槽供給純水而對基板進行純水清洗處理。繼而，使第二供給手段向處理槽供給水溶性有機溶劑，而將處理槽內之純水取代成水溶性有機溶劑，利用水溶性有機溶劑進行處理。藉此，可利用水溶性有機溶劑取代附著於基板上之純水，但當基板上形成有微細圖案之情況下，無法完全取代進入其深處之純水。繼而，由第三供給手段向處理槽供給非水溶性有機溶劑，同時由第二供給手段向處理槽供給水溶性有機溶劑，而利用水溶性有機溶劑以及非水溶性有機溶劑之混合液對基板進行處理，使保持機構移動至上方位置，結束對基板之處理。利用混合液進行處理時，能利用水溶性有機溶劑引出進入基板之微細圖案深處之純水，故而，能防止純水殘留於基板之微細圖案中。從而，能防止形成於基板上之微細圖案倒塌。According to the invention, the control means supplies the first supply means with pure water to the processing tank while the substrate is moved to the processing position by the holding means, and performs pure water washing treatment on the substrate. Then, the second supply means supplies the water-soluble organic solvent to the treatment tank, and the pure water in the treatment tank is replaced with a water-soluble organic solvent, and is treated with a water-soluble organic solvent. Thereby, the pure water adhering to the substrate can be replaced with a water-soluble organic solvent, but in the case where a fine pattern is formed on the substrate, the pure water entering the deep portion cannot be completely replaced. Then, the third supply means supplies the water-insoluble organic solvent to the treatment tank, and the second supply means supplies the water-soluble organic solvent to the treatment tank, and the substrate is subjected to the mixture of the water-soluble organic solvent and the water-insoluble organic solvent. The process moves the holding mechanism to the upper position and ends the processing of the substrate. When the mixture is treated by the mixed solution, pure water which enters the depth of the fine pattern of the substrate can be extracted by the water-soluble organic solvent, so that pure water can be prevented from remaining in the fine pattern of the substrate. Thereby, it is possible to prevent the fine pattern formed on the substrate from collapsing.
而且，於本發明中，較佳為上述控制手段將利用上述水溶性有機溶劑與非水溶性有機溶劑之混合液進行之處理分為：由上述第三供給手段向上述處理槽供給非水溶性有機溶劑，將上述處理槽內之水溶性有機溶劑取代成非水溶性有機溶劑而利用非水溶性有機溶劑對基板進行處理；以及，由上述第二供給手段向上述處理槽供給水溶性有機溶劑而利用水溶性有機溶劑以及非水溶性有機溶劑之混合液對基板進行處理。Further, in the invention, it is preferable that the control means divides the treatment by the mixture of the water-soluble organic solvent and the water-insoluble organic solvent into: supplying the water-insoluble organic solvent to the treatment tank by the third supply means. In the solvent, the water-soluble organic solvent in the treatment tank is replaced with a water-insoluble organic solvent, and the substrate is treated with a water-insoluble organic solvent; and the water-soluble organic solvent is supplied to the treatment tank by the second supply means. The substrate is treated with a mixture of a water-soluble organic solvent and a water-insoluble organic solvent.
首先，供給非水溶性有機溶劑，將水溶性有機溶劑取代成非水溶性有機溶劑，之後供給水溶性有機溶劑，而利用水溶性有機溶劑與非水溶性有機溶劑之混合液進行處理，即便分為上述二階段處理，亦能利用水溶性有機溶劑引出純水。First, a water-insoluble organic solvent is supplied, and a water-soluble organic solvent is substituted with a water-insoluble organic solvent, and then a water-soluble organic solvent is supplied, and a mixture of a water-soluble organic solvent and a water-insoluble organic solvent is used for treatment, even if it is divided into In the above two-stage treatment, pure water can also be extracted by using a water-soluble organic solvent.
本發明係利用處理液對基板進行處理之基板處理方法，上述方法包括以下步驟：將基板移動至處理槽內之處理位置之步驟；向處理槽供給純水而對基板進行純水清洗處理之步驟；向處理槽供給水溶性有機溶劑且將處理槽內之純水取代成水溶性有機溶劑，而利用水溶性有機溶劑對基板進行處理之步驟；向處理槽供給非水溶性有機溶劑以及水溶性有機溶劑而利用水溶性有機溶劑以及非水溶性有機溶劑之混合液對基板進行處理之步驟；以及，將基板移動至位於處理槽上方之上方位置之步驟。The present invention relates to a substrate processing method for processing a substrate by using a processing liquid, the method comprising the steps of: moving the substrate to a processing position in the processing tank; and supplying the pure water to the processing tank to perform a pure water cleaning treatment on the substrate a step of supplying a water-soluble organic solvent to a treatment tank, replacing the pure water in the treatment tank with a water-soluble organic solvent, and treating the substrate with a water-soluble organic solvent; supplying a water-insoluble organic solvent to the treatment tank and water-soluble organic a step of treating the substrate with a solvent and a mixture of a water-soluble organic solvent and a water-insoluble organic solvent; and moving the substrate to a position above the processing tank.
根據本發明，將基板移動至處理槽內之處理位置，向處理槽供給純水而對基板進行純水清洗處理之後，將處理槽內之純水取代成水溶性有機溶劑而利用水溶性有機溶劑對基板進行處理。藉此，可利用水溶性有機溶劑取代附著於基板上之純水，但當基板上形成有微細圖案之情況下，無法完全取代進入其深處之純水。之後，利用水溶性有機溶劑及非水溶性有機溶劑之混合液進行處理，將基板移動至位於處理槽上方之上方位置，結束對基板之處理。利用混合液進行處理時，能利用水溶性有機溶劑引出進入基板之微細圖案深處之純水，故而，能防止純水殘留於基板之微細圖案中。從而，能防止形成於基板上之微細圖案倒塌。According to the present invention, the substrate is moved to a processing position in the treatment tank, pure water is supplied to the treatment tank, and the substrate is subjected to pure water cleaning treatment, and then the pure water in the treatment tank is replaced with a water-soluble organic solvent to utilize a water-soluble organic solvent. The substrate is processed. Thereby, the pure water adhering to the substrate can be replaced with a water-soluble organic solvent, but in the case where a fine pattern is formed on the substrate, the pure water entering the deep portion cannot be completely replaced. Thereafter, the mixture is treated with a mixed solution of a water-soluble organic solvent and a water-insoluble organic solvent, and the substrate is moved to an upper position above the treatment tank to terminate the treatment of the substrate. When the mixture is treated by the mixed solution, pure water which enters the depth of the fine pattern of the substrate can be extracted by the water-soluble organic solvent, so that pure water can be prevented from remaining in the fine pattern of the substrate. Thereby, it is possible to prevent the fine pattern formed on the substrate from collapsing.
本發明係利用處理液對基板進行處理之基板處理裝置，上述裝置包括以下要素：處理槽，具有用於儲留處理液之內槽、及用於回收自內槽溢出之處理液之外槽；保持機構，保持基板，可跨及上述處理槽內之處理位置、與位於上述處理槽上方之上方位置而移動；供給配管，使內槽與上述外槽連通連接，使處理液循環；分支配管，作為上述供給配管之分支；分離手段，配設於上述分支配管，使處理液中之純水與溶劑分離而排出處理液中之純水；注入管，配設於上述供給配管，較上述分離手段位於更下游側而注入純水；水溶性有機溶劑注入手段，將水溶性有機溶劑注入至上述注入管；非水溶性有機溶劑注入手段，向上述注入管注入非水溶性有機溶劑；以及，控制手段，用於實現如下處理：於藉由上述保持機構而將基板移動至處理位置之狀態下，使上述注入管以及上述供給配管將純水供給至上述處理槽內，利用純水對處理槽內之基板進行清洗，即純水清洗處理，使上述水溶性有機溶劑注入手段經由上述注入管以及上述供給配管而向上述處理槽供給水溶性有機溶劑，而利用水溶性有機溶劑取代純水，將流路切換到上述分支配管，同時利用上述分離手段除去處理液中之純水，使上述非水溶性有機溶劑注入手段經由上述注入管以及上述供給配管而向上述處理槽供給非水溶性有機溶劑，且使上述水溶性有機溶劑注入手段經由上述注入管以及上述供給配管而向上述處理槽供給少量的水溶性有機溶劑，而對基板利用水溶性有機溶劑與非水溶性有機溶劑之混合液進行處理，之後，使上述保持機構移動至上方位置。The present invention relates to a substrate processing apparatus for processing a substrate by using a treatment liquid, the apparatus comprising the following elements: a treatment tank having an inner tank for storing the treatment liquid, and a treatment tank for recovering the treatment liquid overflowing from the inner tank; The holding mechanism holds the substrate and moves across the processing position in the processing tank and the upper position above the processing tank; the piping is supplied, the inner tank is connected to the outer tank, and the processing liquid is circulated; As a branch of the supply pipe, the separation means is disposed in the branch pipe, and the pure water in the treatment liquid is separated from the solvent to discharge the pure water in the treatment liquid; the injection pipe is disposed in the supply pipe, and the separation means is a further downstream side to inject pure water; a water-soluble organic solvent injection means to inject a water-soluble organic solvent into the injection tube; a water-insoluble organic solvent injection means to inject a water-insoluble organic solvent into the injection tube; and, a control means For performing the following processing: in the state where the substrate is moved to the processing position by the holding mechanism, the above note is made The pipe and the supply pipe supply pure water to the treatment tank, and the substrate in the treatment tank is cleaned by pure water, that is, pure water washing treatment, and the water-soluble organic solvent injection means is passed through the injection pipe and the supply pipe. The water-soluble organic solvent is supplied to the treatment tank, and the water is replaced by the water-soluble organic solvent, and the flow path is switched to the branch pipe, and the pure water in the treatment liquid is removed by the separation means to inject the water-insoluble organic solvent. The method of supplying a water-insoluble organic solvent to the treatment tank via the injection pipe and the supply pipe, and supplying the water-soluble organic solvent injection means to the treatment tank through the injection pipe and the supply pipe to supply a small amount of a water-soluble organic solvent Then, the substrate is treated with a mixture of a water-soluble organic solvent and a water-insoluble organic solvent, and then the holding mechanism is moved to the upper position.
根據本發明，控制手段，於藉由保持機構而將基板移動至處理位置之狀態下，利用純水對處理槽內之基板進行清洗、即進行純水清洗處理，使水溶性有機溶劑注入手段經由注入管以及供給配管而向處理槽供給水溶性有機溶劑而利用純水取代水溶性有機溶劑處理。藉此，可利用水溶性有機溶劑取代附著於基板上之純水，但當基板上形成有微細圖案之情況下，無法完全取代進入其深處之純水。之後，將流路切換到分支配管，同時利用分離手段除去處理液中之純水，自非水溶性有機溶劑注入手段經由注入管以及供給配管而向處理槽供給非水溶性有機溶劑，同時自水溶性有機溶劑注入手段經由注入管以及供給配管而向處理槽供給少量的水溶性有機溶劑而進行處理之後，將保持機構移動至上方位置。利用混合液進行處理時，能利用少量的水溶性有機溶劑引出進入基板之微細圖案深處之純水，故而能防止純水殘留於基板之微細圖案中。從而，能防止形成於基板上之微細圖案倒塌。According to the present invention, in the state in which the substrate is moved to the processing position by the holding means, the substrate in the processing tank is cleaned by pure water, that is, pure water cleaning treatment is performed, and the water-soluble organic solvent injection means is passed through The injection tube and the supply pipe are supplied with a water-soluble organic solvent to the treatment tank, and treated with pure water instead of the water-soluble organic solvent. Thereby, the pure water adhering to the substrate can be replaced with a water-soluble organic solvent, but in the case where a fine pattern is formed on the substrate, the pure water entering the deep portion cannot be completely replaced. After that, the flow path is switched to the branch pipe, and the pure water in the treatment liquid is removed by the separation means, and the water-insoluble organic solvent is supplied from the water-insoluble organic solvent injection means to the treatment tank through the injection pipe and the supply pipe, and is dissolved from the water. The organic solvent injection means supplies a small amount of a water-soluble organic solvent to the treatment tank through the injection pipe and the supply pipe, and then moves the holding mechanism to the upper position. When the mixture is treated with a mixed solution, pure water which enters the depth of the fine pattern of the substrate can be extracted with a small amount of a water-soluble organic solvent, so that pure water can be prevented from remaining in the fine pattern of the substrate. Thereby, it is possible to prevent the fine pattern formed on the substrate from collapsing.
以下，參照圖式對本發明之較佳實施例進行詳細說明。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.
圖1為表示實施例之基板處理裝置之概略構成之方塊圖。Fig. 1 is a block diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment.
本實施例中之基板處理裝置具有處理槽1，該處理槽1包括內槽3及外槽5。內槽3中儲留處理液，且可收容由挺桿(lifter)7保持之基板W。本發明中之相當於「保持機構」之挺桿7中，於板狀臂部之下部具有抵接於基板W之下邊緣以支撐基板W使其成起立姿態之支撐構件。該挺桿7，可跨及位於內槽3內部之「處理位置」、與位於內槽3上方之「上方位置」而升降。內槽3內儲留純水、溶劑或者其等之混合液等作為處理液，自內槽3溢出之處理液被以包圍內槽3上部外周之方式而設之外槽5回收。內槽3之底部兩側配設有用於對內槽3供給處理液之二根噴出管9。The substrate processing apparatus in this embodiment has a processing tank 1 including an inner tank 3 and an outer tank 5. The processing liquid is stored in the inner tank 3, and the substrate W held by the lifter 7 can be accommodated. In the tappet 7 corresponding to the "holding mechanism" in the present invention, the lower portion of the plate-like arm portion has a supporting member that abuts against the lower edge of the substrate W to support the substrate W in a standing posture. The tappet 7 can be raised and lowered across the "processing position" located inside the inner tank 3 and the "upper position" located above the inner tank 3. In the inner tank 3, pure water, a solvent or a mixed liquid thereof or the like is stored as a treatment liquid, and the treatment liquid overflowing from the inner tank 3 is collected in the outer tank 5 so as to surround the outer periphery of the upper portion of the inner tank 3. Two discharge pipes 9 for supplying the treatment liquid to the inner tank 3 are disposed on both sides of the bottom of the inner tank 3.
供給配管11之一端側連通連接於噴出管9，而另一端側連通連接於外槽5之排出口13。供給配管11自位於外槽5側之上游側依序具有三通閥15、泵17、三通閥19～21及線內加熱器22。三通閥15切換處理液之循環與排液，泵17使處理液循環，三通閥19切換處理液之循環與純水除去(詳請於下文敍述)，三通閥20、21切換處理液之循環與冷卻(詳請於下文敍述)。線內加熱器22將供給配管11內流通之處理液加熱至指定溫度。One end side of the supply pipe 11 is connected to the discharge pipe 9 while the other end side is connected to the discharge port 13 of the outer tank 5. The supply pipe 11 has a three-way valve 15, a pump 17, three-way valves 19 to 21, and an in-line heater 22 in this order from the upstream side on the outer tank 5 side. The three-way valve 15 switches the circulation and discharge of the treatment liquid, the pump 17 circulates the treatment liquid, the three-way valve 19 switches the circulation of the treatment liquid and the pure water removal (described later), and the three-way valve 20, 21 switches the treatment liquid. Cycle and cooling (details are described below). The in-line heater 22 heats the treatment liquid flowing through the supply pipe 11 to a predetermined temperature.
三通閥20、21連通連接於自供給配管11分支之第一分支配管23。該第一分支配管23上安裝有冷卻單元25。冷卻單元25具有將第一分支配管23內流通之處理液冷卻至指定溫度之功能。The three-way valves 20 and 21 are connected to the first branch pipe 23 branched from the supply pipe 11 . A cooling unit 25 is mounted on the first branch pipe 23. The cooling unit 25 has a function of cooling the processing liquid flowing through the first branch pipe 23 to a predetermined temperature.
於線內加熱器22之下游側且較噴出管9更位於上游側之供給配管11之一個部位，連通連接有注入管27之一端側。注入管27之另一端側連通連接於純水供給源29。於注入管27上，自下游側依序配設有控制閥31、混合閥33、及流量控制閥35。控制閥31對純水、溶劑或者純水中混合有溶劑之處理液等之供給及遮斷進行控制。二根藥液配管37、39之一端側連通連接於混合閥33，而各自之另一端側連通分別連接於HFE供給源41、IPA供給源43。二根藥液配管37、39分別具有用於調整流量之流量控制閥45、47。混合閥33具有對於作為非水溶性有機溶劑之例如為氟系溶劑之HFE(hydrofluoroether，氫氟醚)、或者作為水溶性溶劑之例如IPA(isopropanol，異丙醇)進行混合之功能。One end of the supply pipe 11 on the downstream side of the in-line heater 22 and on the upstream side of the discharge pipe 9 is connected to one end side of the injection pipe 27. The other end side of the injection pipe 27 is connected and connected to the pure water supply source 29. On the injection pipe 27, a control valve 31, a mixing valve 33, and a flow rate control valve 35 are disposed in this order from the downstream side. The control valve 31 controls supply and interruption of a treatment liquid or the like in which pure water, a solvent or pure water is mixed with a solvent. One end side of the two chemical liquid pipes 37, 39 is connected to the mixing valve 33, and the other end side is connected to the HFE supply source 41 and the IPA supply source 43, respectively. The two chemical liquid pipes 37, 39 respectively have flow control valves 45, 47 for adjusting the flow rate. The mixing valve 33 has a function of mixing HFE (hydrofluoroether) such as a fluorine-based solvent as a water-insoluble organic solvent or, for example, IPA (isopropanol) as a water-soluble solvent.
再者，噴出管9、供給配管11以及注入管27相當於本發明中之「第一供給手段」。而且，噴出管9、供給配管11、注入管27、混合閥33以及藥液配管39相當於本發明中之「第二供給手段」，噴出管9、供給配管11、注入管27、混合閥33以及藥液配管37相當於本發明中之「第三供給手段」。Further, the discharge pipe 9, the supply pipe 11, and the injection pipe 27 correspond to the "first supply means" in the present invention. Further, the discharge pipe 9, the supply pipe 11, the injection pipe 27, the mixing valve 33, and the chemical liquid pipe 39 correspond to the "second supply means" in the present invention, and the discharge pipe 9, the supply pipe 11, the injection pipe 27, and the mixing valve 33. The chemical liquid pipe 37 corresponds to the "third supply means" in the present invention.
供給配管11具有使冷卻單元25之上游側與下游側連通連接之第二分支配管49。該第二分支配管49具有用於使處理液中之純水與溶劑分離之油水分離過濾器51。進而，供給配管11具有與第二分支配管49並排設置之第三分支配管53。該第三分支配管53使第二分支配管49之油水分離過濾器51之上游側與下游側部分連通連接。第三分支配管53具有用於吸附並除去處理液中之純水之吸附過濾器55。該吸附過濾器55可由分子篩沸石(Molecular sieve)、活性碳、氧化鋁等而構成，具有亦能吸附並除去處理液中之微量純水之功能。The supply pipe 11 has a second branch pipe 49 that connects the upstream side and the downstream side of the cooling unit 25 in communication. The second branch pipe 49 has a water-oil separation filter 51 for separating pure water in the treatment liquid from the solvent. Further, the supply pipe 11 has a third branch pipe 53 provided in parallel with the second branch pipe 49. The third branch pipe 53 connects the upstream side and the downstream side portion of the oil-water separation filter 51 of the second branch pipe 49 in communication. The third branch pipe 53 has an adsorption filter 55 for adsorbing and removing pure water in the treatment liquid. The adsorption filter 55 can be composed of molecular sieve zeolite, activated carbon, alumina, or the like, and has a function of adsorbing and removing a trace amount of pure water in the treatment liquid.
上述第二分支配管49，於油水分離過濾器51之上游側具有靜態攪拌器57。由第四分支配管58使該靜態攪拌器57之上游側、與靜態攪拌器57之下游側且為油水分離過濾器51之上游側連通連接。第四分支配管58內之處理液之流通由控制閥59控制。於靜態攪拌器57之上游部，具有用於向第二分支配管49內流通之處理液注入純水之注入部60。而且，具有用於對注入部60之純水注入流量進行控制之流量控制閥61。靜態攪拌器57之詳情於下文敍述，無驅動部，藉由分解、轉換、反轉之作用依序對流體進行攪拌混合。The second branch pipe 49 has a static agitator 57 on the upstream side of the oil-water separation filter 51. The upstream side of the static agitator 57 is connected to the downstream side of the static agitator 57 and the upstream side of the oil-water separation filter 51 by the fourth branch pipe 58. The flow of the treatment liquid in the fourth branch pipe 58 is controlled by the control valve 59. An injection portion 60 for injecting pure water into the treatment liquid flowing through the second branch pipe 49 is provided in the upstream portion of the static agitator 57. Further, a flow rate control valve 61 for controlling the flow rate of the pure water injection into the injection portion 60 is provided. The details of the static agitator 57 are described below, and there is no driving portion, and the fluid is stirred and mixed in sequence by the action of decomposition, conversion, and reversal.
於三通閥19與第二分支配管49之間配設有控制閥63，於第三分支配管53上之吸附過濾器55之上游側配設有控制閥65。而且，於第二分支配管49之最上游部配設有控制閥67，且最下游部配設有控制閥68。而且，於位於吸附過濾器55下游側之第三分支配管53上，配設有控制閥69。A control valve 63 is disposed between the three-way valve 19 and the second branch pipe 49, and a control valve 65 is disposed on the upstream side of the adsorption filter 55 on the third branch pipe 53. Further, a control valve 67 is disposed at the most upstream portion of the second branch pipe 49, and a control valve 68 is disposed at the most downstream portion. Further, a control valve 69 is disposed on the third branch pipe 53 located on the downstream side of the adsorption filter 55.
再者，上述之油水分離過濾器51以及吸附過濾器55相當於本發明之「分離手段」。Further, the above-described oil-water separation filter 51 and adsorption filter 55 correspond to the "separation means" of the present invention.
上述處理槽1被腔體70包圍，而與周圍環境分離。腔體70之內部上方，配設有一對溶劑噴嘴71。該溶劑噴嘴71自未圖示之溶劑蒸氣產生部供給IPA之蒸氣。IPA蒸氣之供給去處為位於處理槽1上方之上方位置，使腔體70之內部成為溶劑蒸氣環境。再者，於腔體70之上部，配設有未圖示之可自由開關之上蓋，於挺桿7於腔體70內進退時使之開關。The treatment tank 1 described above is surrounded by the cavity 70 and separated from the surrounding environment. A pair of solvent nozzles 71 are disposed above the interior of the cavity 70. The solvent nozzle 71 supplies the vapor of the IPA from a solvent vapor generation unit (not shown). The supply of the IPA vapor is located above the processing tank 1 so that the interior of the chamber 70 becomes a solvent vapor environment. Further, a cap that can be freely opened and closed (not shown) is disposed on the upper portion of the cavity 70, and is opened and closed when the tappet 7 advances and retracts in the cavity 70.
繼而，參照圖2。再者，圖2為表示靜態攪拌器之概略構成之縱剖面圖。Then, refer to FIG. 2. 2 is a longitudinal cross-sectional view showing a schematic configuration of a static agitator.
靜態攪拌器57具有本體部73、及配設於本體部73內之多個元件75。各元件75由長方形之板構件扭轉180°而形成，且所鄰接之元件75分別向逆方向扭轉而形成。該靜態攪拌器57之上游部具有上述注入部60，向處理液中注入純水，對於所得之溶液利用分割、轉換、反轉作用進行攪拌混合。尤其是，當溶劑如HFE(氫氟醚)等完全不溶於純水之非水溶性有機溶劑之情況下，藉由靜態攪拌器57而將純水與溶劑混合後，利用油水分離過濾器51進行分離，從而可提高純水之分離效率。The static agitator 57 has a body portion 73 and a plurality of elements 75 disposed in the body portion 73. Each element 75 is formed by twisting a rectangular plate member by 180°, and the adjacent elements 75 are respectively twisted in the reverse direction. The upstream portion of the static agitator 57 has the injection portion 60, and pure water is injected into the treatment liquid, and the obtained solution is stirred and mixed by the division, conversion, and reversal action. In particular, when a solvent such as HFE (hydrofluoroether) or the like is completely insoluble in the water-insoluble organic solvent of pure water, the pure water is mixed with the solvent by the static stirrer 57, and then the oil-water separation filter 51 is used. Separation, thereby improving the separation efficiency of pure water.
繼而，參照圖3。再者，圖3為表示油水分離過濾器之概略構成之縱剖面圖。Then, refer to FIG. 3. FIG. 3 is a longitudinal cross-sectional view showing a schematic configuration of the oil-water separation filter.
油水分離過濾器51具有：外罩77；位於外罩77底部之液體導入部79；過濾器81，對來自液體導入部79之處理液進行過濾；第一儲留部83，儲留通過過濾器81之液體中之比重較大之液體；第二儲留部85，儲留通過過濾器81之液體中之比重較小之液體；流入部87，使處理液流入液體導入部79；第一排出部89，排出第一儲留部83內之液體；第二排出部91，排出第二儲留部85內之液體；以及，冷卻管93，沿著外罩77之外壁而配設，且用於間接地使過濾器81冷卻。流入部87位於第二分支管49之上游側，而第一排出部89位於第二分支管49之下游側。過濾器81之功能在於，利用超極細纖維過濾器捕捉經微分散處理之游離液，使其凝聚而實現粗化，其將以微米程度進行微分散處理後之游離液粗化成毫米程度，且根據比重差瞬間將其完全分散成二層系。再者，經由冷卻管93而使過濾器81冷卻，藉此，可提高油水分離之效率。The oil-water separation filter 51 has an outer cover 77, a liquid introduction portion 79 at the bottom of the outer cover 77, a filter 81 for filtering the treatment liquid from the liquid introduction portion 79, and a first storage portion 83 that is stored and passed through the filter 81. a liquid having a large specific gravity in the liquid; a second storage portion 85 storing a liquid having a small specific gravity among the liquid passing through the filter 81; an inflow portion 87 for flowing the treatment liquid into the liquid introduction portion 79; and a first discharge portion 89 Discharging the liquid in the first storage portion 83; the second discharge portion 91 discharging the liquid in the second storage portion 85; and the cooling tube 93 is disposed along the outer wall of the outer cover 77 and used for indirect The filter 81 is cooled. The inflow portion 87 is located on the upstream side of the second branch pipe 49, and the first discharge portion 89 is located on the downstream side of the second branch pipe 49. The function of the filter 81 is to capture the finely dispersed free liquid by the ultrafine fiber filter and agglomerate it to achieve coarsening, which coarsens the free liquid after microdispersion treatment to a millimeter degree, and according to The difference in specific gravity instantly disperses it completely into a two-layer system. Further, the filter 81 is cooled by the cooling pipe 93, whereby the efficiency of oil-water separation can be improved.
而且，內槽3之上部附近設有用於測定處理液中之純水濃度的濃度計95。作為該濃度計95，可列舉例如紅外線吸收方式之濃度計。Further, a concentration meter 95 for measuring the concentration of pure water in the treatment liquid is provided in the vicinity of the upper portion of the inner tank 3. As the concentration meter 95, for example, a concentration meter of an infrared absorption method can be cited.
關於上述挺桿7之升降、泵17之運行/停止、線內加熱器22之溫度控制、流量控制閥35、45、47、61的流量控制、控制閥31之開關控制、三通閥15、19～21之切換控制、控制閥59、63、65、67、68、69之開關控制等，可統一由本發明中的相當於「控制手段」之控制部97進行控制。The above-described lifting and lowering of the tappet 7, the operation/stop of the pump 17, the temperature control of the in-line heater 22, the flow control of the flow control valves 35, 45, 47, 61, the switching control of the control valve 31, the three-way valve 15, The switching control of 19 to 21, the switching control of the control valves 59, 63, 65, 67, 68, 69, and the like can be collectively controlled by the control unit 97 corresponding to the "control means" in the present invention.
而且，控制部97對上述各部進行操作實施以下處理：「純水清洗處理」，使挺桿7移動至處理位置，供給純水作為處理液；「取代處理」，上述純水清洗處理之後，向處理液中供給IPA而由IPA取代純水；「冷卻處理」，利用冷卻單元25使處理液冷卻；以及「分離除去處理」，藉由油水分離過濾器51除去處理液中之純水。之後，進行「吸附除去處理」，即，藉由吸附過濾器55而吸附除去處理液中之純水。而且，進行「取代促進處理」，向處理液內注入HFE，且由HFE取代IPA。當處理液中之純水濃度為指定值以下之情況下，進行「精處理」，即，再次注入少量(例如5～10%左右)之IPA，使用HFE與IPA之混合液作為處理液，利用吸附過濾器55進而吸附除去處理液中的純水。其中，於進行「取代處理」以及「分離除去處理」時，將純水及溶劑通過靜態攪拌器57，利用分割、轉換、反轉之作用進行攪拌混合，之後通過油水分離過濾器51，從而可提高油水分離過濾器51的分離效率。尤其是，當有機溶劑為難溶於純水之HFE之情況下，靜態攪拌器57的效果較顯著。當「精處理」結束之後，由溶劑噴嘴71供給有機溶劑之蒸氣，使腔體70內形成溶劑環境，由處理槽1抬起挺桿7，藉此對基板W進行乾燥處理。Further, the control unit 97 operates the above-described respective units to perform the following process: "pure water washing treatment", moving the tappet 7 to the processing position, supplying pure water as the processing liquid, and "replacement processing", after the pure water washing treatment, IPA is supplied to the treatment liquid, and pure water is replaced by IPA; "cooling treatment", cooling of the treatment liquid by the cooling unit 25, and "separation and removal treatment", and the pure water in the treatment liquid is removed by the oil-water separation filter 51. Thereafter, the "adsorption removal treatment" is performed, that is, the pure water in the treatment liquid is adsorbed and removed by the adsorption filter 55. Further, the "substitution-promoting treatment" was carried out, and HFE was injected into the treatment liquid, and IPA was replaced by HFE. When the concentration of pure water in the treatment liquid is equal to or less than the specified value, "fine treatment" is performed, that is, a small amount (for example, about 5 to 10%) of IPA is injected again, and a mixed liquid of HFE and IPA is used as a treatment liquid. The adsorption filter 55 further adsorbs and removes pure water in the treatment liquid. In the case of performing the "substitution treatment" and the "separation removal treatment", the pure water and the solvent are passed through the static agitator 57, and are stirred and mixed by the action of division, conversion, and reversal, and then passed through the oil-water separation filter 51. The separation efficiency of the oil-water separation filter 51 is improved. In particular, when the organic solvent is HFE which is hardly soluble in pure water, the effect of the static agitator 57 is remarkable. After the "finishing treatment" is completed, the solvent of the organic solvent is supplied from the solvent nozzle 71 to form a solvent environment in the chamber 70, and the tappet 7 is lifted by the processing tank 1, whereby the substrate W is dried.
再者，較佳為，於進行「吸附除去處理」之前確認處理液中之有機溶劑的飽和溶解度，可代用濃度計95。純水濃度之具體值例如為0.1[%]以下。其目的在於避免以下情況：因純水濃度較高而進行「吸附除去處理」時，吸附過濾器55於短時間內失去吸水力，須要頻繁地更換吸附過濾器55。Further, it is preferable to confirm the saturation solubility of the organic solvent in the treatment liquid before performing the "adsorption removal treatment", and the concentration meter 95 can be substituted. The specific value of the pure water concentration is, for example, 0.1 [%] or less. The purpose of this is to avoid the case where the adsorption filter 55 loses the water absorption force in a short time when the "adsorption removal treatment" is performed because of the high pure water concentration, and the adsorption filter 55 needs to be frequently replaced.
而且，於「取代促進處理」中，較佳為，控制部97對流量控制閥45進行操作，將HFE之流量設為較小流量，注入HFE。藉此，可使內槽3內部包含HFE，且使HFE與儲留於內槽3內之IPA之間保持分界。因此，能高效地由HFE取代IPA。Further, in the "substitution promotion process", it is preferable that the control unit 97 operates the flow rate control valve 45 to set the flow rate of the HFE to a small flow rate and inject the HFE. Thereby, the inside of the inner tank 3 can be made to contain the HFE, and the boundary between the HFE and the IPA stored in the inner tank 3 can be maintained. Therefore, IPA can be replaced by HFE efficiently.
繼而，參照圖4～圖6，對上述基板處理裝置之動作進行說明。再者，圖4為表示動作之流程圖，圖5A～圖5D以及圖6A～圖6D為用於說明有機溶劑之作用之示意圖。Next, the operation of the substrate processing apparatus will be described with reference to Figs. 4 to 6 . 4 is a flow chart showing the operation, and FIGS. 5A to 5D and FIGS. 6A to 6D are schematic views for explaining the action of the organic solvent.
控制部97，將三通閥15切換到循環側，同時將三通閥19～21切換到供給配管11側，打開控制閥31同時調整流量控制閥35，自純水供給源29經由注入管27以及供給配管11而以指定流量向內槽3供給純水。當內槽3、外槽5以及供給配管11內全部充滿純水之後，使泵17以及線內加熱器22運行，將純水加熱至指定溫度(例如60℃)。當達到指定溫度之後，使挺桿7自腔體70外之待機位置下降至處理位置且維持指定時間，利用加熱至指定溫度之純水對基板W進行清洗處理。此時之狀態如圖5A之示意圖所示，為基板W之微細圖案之間浸入有純水之狀態。The control unit 97 switches the three-way valve 15 to the circulation side, switches the three-way valves 19 to 21 to the supply pipe 11 side, opens the control valve 31, and simultaneously adjusts the flow rate control valve 35 from the pure water supply source 29 via the injection pipe 27. And the supply pipe 11 supplies pure water to the inner tank 3 at a predetermined flow rate. After the inner tank 3, the outer tank 5, and the supply pipe 11 are all filled with pure water, the pump 17 and the in-line heater 22 are operated to heat the pure water to a predetermined temperature (for example, 60 ° C). After the specified temperature is reached, the tappet 7 is lowered from the standby position outside the cavity 70 to the processing position for a predetermined time, and the substrate W is cleaned by the pure water heated to the specified temperature. The state at this time is as shown in the schematic view of Fig. 5A, and the state in which the fine patterns of the substrate W are immersed in pure water is used.
控制部97，使線內加熱器22以及泵17停止，同時將三通閥15切換到排液側，同時關閉流量控制閥35。而且，將流量控制閥47調節為指定流量，向供給配管11供給IPA(圖5B)。當內槽3以及外槽5內充滿IPA之後，將三通閥15切換到供給配管11側同時使泵17運行。藉此，處理液中之大部分純水被排出，處理液中混合有IPA，且純水被IPA取代。該狀態如圖5C之示意圖所示，浸入基板W之微細圖案中之純水DIW之大部分可被IPA取代，但是無法由IPA完全取代微細圖案深處之純水DIW。The control unit 97 stops the in-line heater 22 and the pump 17, and simultaneously switches the three-way valve 15 to the drain side and closes the flow rate control valve 35. Then, the flow rate control valve 47 is adjusted to a predetermined flow rate, and the IPA is supplied to the supply pipe 11 (FIG. 5B). After the inner tank 3 and the outer tank 5 are filled with IPA, the three-way valve 15 is switched to the side of the supply pipe 11 while the pump 17 is operated. Thereby, most of the pure water in the treatment liquid is discharged, the treatment liquid is mixed with IPA, and the pure water is replaced by IPA. This state is shown in the schematic diagram of Fig. 5C, and most of the pure water DIW immersed in the fine pattern of the substrate W can be replaced by IPA, but the pure water DIW deep in the fine pattern cannot be completely replaced by IPA.
控制部97將三通閥20、21切換到第一分支配管23側，同時藉由冷卻單元25而將處理液冷卻到指定溫度。藉由冷卻，可使純水難溶於IPA。The control unit 97 switches the three-way valves 20 and 21 to the first branch pipe 23 side while cooling the processing liquid to a predetermined temperature by the cooling unit 25. By cooling, pure water is hardly soluble in IPA.
控制部97使控制閥63、67、68打開，同時將三通閥19切換到第一分支管49側。藉此，利用靜態攪拌器57使IPA與純水充分混合之後，使處理液通過油水分離過濾器51。The control unit 97 opens the control valves 63, 67, 68 and simultaneously switches the three-way valve 19 to the side of the first branch pipe 49. Thereby, after the IPA is sufficiently mixed with the pure water by the static agitator 57, the treatment liquid is passed through the oil-water separation filter 51.
再者，此時，可調整流量控制閥61，向靜態攪拌器57內流通之處理液中注入少量的純水。其目的在於，當溶劑中之純水濃度為固定值以下時，油水分離過濾器51之純水與溶劑之分離效率會下降，故而向純水濃度降低之處理液中積極地注入且混合純水，藉此，利用純水引出使濃度為固定值以下之純水而利用油水分離過濾器51進行分離。Further, at this time, the flow rate control valve 61 can be adjusted to inject a small amount of pure water into the treatment liquid flowing through the static agitator 57. The purpose is that when the concentration of the pure water in the solvent is a fixed value or less, the separation efficiency of the pure water and the solvent of the oil-water separation filter 51 is lowered, so that the pure water is actively injected and mixed into the treatment liquid having a reduced pure water concentration. Thereby, pure water having a concentration of a fixed value or less is extracted by pure water, and separated by the oil-water separation filter 51.
當上述處理經過指定時間之後，控制部97使控制閥59打開，將流路切換到第四分支配管58，使處理液繞過靜態攪拌器57。藉此，純水濃度降低之處理液僅通過油水分離過濾器51。再者，亦可省略第四分支配管58，而使處理液始終通過靜態攪拌器57。After the predetermined time has elapsed, the control unit 97 opens the control valve 59, switches the flow path to the fourth branch pipe 58, and bypasses the static agitator 57 with the processing liquid. Thereby, the treatment liquid having a reduced pure water concentration passes only through the oil-water separation filter 51. Further, the fourth branch pipe 58 may be omitted, and the treatment liquid may always pass through the static agitator 57.
控制部97使控制閥65、69打開，同時使控制閥67、68關閉。藉此，使純水濃度降低之處理液(大部分為HFE)流入第三分支管53。藉此，殘留於處理液中之少量的純水被吸附過濾器55吸附除去。The control unit 97 opens the control valves 65, 69 while closing the control valves 67, 68. Thereby, the treatment liquid (mostly HFE) having a reduced pure water concentration flows into the third branch pipe 53. Thereby, a small amount of pure water remaining in the treatment liquid is adsorbed and removed by the adsorption filter 55.
當上述吸附除去處理經過指定時間之後，控制部97將控制閥15切換到排液側，同時將三通閥19～21切換到供給配管11側。進而，調整流量控制閥45，以小流量將HFE供給至內槽3(圖5D)。藉此，IPA不與HFE混合而緩緩地被抬升而自內槽3排出，同時被HFE取代。其中，仍有少量的純水殘留於處理液中或基板W之微細圖案內(圖6A)。亦即，HFE較之IPA更容易浸入微細圖案之深處，但HFE不溶於純水，故而微細圖案深處不會殘留純水。當內槽3內充滿HFE之後，關閉控制閥31以及流量控制閥45，同時將三通閥19切換到第二分支配管49側，打開控制閥67、68，另一方面，關閉控制閥58。藉此，如上述步驟S4所示，含有HFE之處理液通過靜態攪拌器57及油水分離過濾器51，其中之純水被除去。控制部97使油水分離過濾器51以指定時間除去純水之後，如上述步驟S5所述，切換流路利用吸附過濾器55進行吸附除去。When the adsorption removal process has passed the predetermined time, the control unit 97 switches the control valve 15 to the drain side, and simultaneously switches the three-way valves 19 to 21 to the supply pipe 11 side. Further, the flow rate control valve 45 is adjusted to supply the HFE to the inner tank 3 at a small flow rate (Fig. 5D). Thereby, the IPA is not mixed with the HFE, but is slowly lifted up and discharged from the inner tank 3, and is replaced by the HFE. Among them, a small amount of pure water remains in the treatment liquid or in the fine pattern of the substrate W (Fig. 6A). That is, HFE is more likely to be immersed in the depth of the fine pattern than the IPA, but the HFE is insoluble in pure water, so that pure water does not remain in the deep portion of the fine pattern. After the inner tank 3 is filled with the HFE, the control valve 31 and the flow rate control valve 45 are closed, and the three-way valve 19 is switched to the second branch pipe 49 side, the control valves 67, 68 are opened, and the control valve 58 is closed. Thereby, as shown in the above step S4, the treatment liquid containing HFE passes through the static agitator 57 and the oil-water separation filter 51, and the pure water is removed. After the control unit 97 removes the pure water by the oil-water separation filter 51 for a predetermined period of time, the switching flow path is adsorbed and removed by the adsorption filter 55 as described in the above step S5.
控制部97，使吸附過濾器55進行吸附除去，直到濃度計95表示處理液中之純水濃度達到指定值以下為止。指定值例如為0.1[%]以下。The control unit 97 causes the adsorption filter 55 to perform adsorption removal until the concentration meter 95 indicates that the concentration of pure water in the treatment liquid has reached a predetermined value or less. The specified value is, for example, 0.1 [%] or less.
控制部97，再次向純水濃度已降低之處理液內注入IPA而進行精處理。具體而言，打開控制閥31，同時調整流量控制閥47，將少量IPA注入至處理液中(圖6B)。該濃度例如為5～10%左右。於該狀態下使吸附過濾器55維持吸附除去之處理，由此自大部分為HFE而含有少量IPA之處理液中除去少量的純水。藉此，可引出且除去殘留於基板W之微細圖案內之純水。換而言之，如圖6C所示，使殘留於基板W之微細圖案深處之純水、及浸入基板W之微細圖案深處的HFE，與溶於純水以及HFE之IPA結合而引入，同時如圖6D所示，利用HFE自基板W中除去IPA及純水。The control unit 97 again injects IPA into the treatment liquid having a reduced pure water concentration to perform finishing treatment. Specifically, the control valve 31 is opened while the flow rate control valve 47 is adjusted, and a small amount of IPA is injected into the treatment liquid (Fig. 6B). This concentration is, for example, about 5 to 10%. In this state, the adsorption filter 55 is maintained to be adsorbed and removed, whereby a small amount of pure water is removed from the treatment liquid containing a small amount of IPA, which is mostly HFE. Thereby, pure water remaining in the fine pattern of the substrate W can be extracted and removed. In other words, as shown in FIG. 6C, pure water remaining deep in the fine pattern of the substrate W and HFE immersed deep in the fine pattern of the substrate W are introduced in combination with IPA dissolved in pure water and HFE. At the same time, as shown in FIG. 6D, IPA and pure water are removed from the substrate W by HFE.
再者，上述IPA與純水之關係如圖7所示。圖7為用於說明IPA與純水之關係之圖Furthermore, the relationship between the above IPA and pure water is as shown in FIG. Figure 7 is a diagram for explaining the relationship between IPA and pure water.
亦即，若上述處理過程中IPA之濃度下降，則溶於IPA之純水DIW會減少，故而，純水DIW的濃度會下降至小於固定值。從而，會有純水DIW殘留(符號rs)。因此，如上所述，供給HFE之後再次供給IPA，使純水DIW之殘留部分rs溶入IPA中。That is, if the concentration of IPA in the above process is lowered, the pure water DIW dissolved in IPA is reduced, so that the concentration of pure water DIW is lowered to less than a fixed value. Thus, there will be a residual DIW of pure water (symbol rs). Therefore, as described above, the IPA is supplied again after the supply of the HFE, and the residual portion rs of the pure water DIW is dissolved in the IPA.
當上述處理經過指定時間之後，控制部97使溶劑噴嘴71供給溶劑蒸氣，使處理槽1周圍形成溶劑環境。繼而，使挺桿7上升，使附著於基板W上之HFE揮發，而使基板W乾燥。After the predetermined time has elapsed, the control unit 97 supplies the solvent nozzle 71 with the solvent vapor to form a solvent environment around the processing tank 1. Then, the tappet 7 is raised to volatilize the HFE adhering to the substrate W, and the substrate W is dried.
如上所述，利用本實施例裝置，控制部97，於藉由挺桿7使基板W移動至處理位置之狀態下，利用純水對處理槽1內之基板W進行清洗、即進行純水清洗處理，且自混合閥33向供給配管11注入IPA而由IPA取代純水、即進行取代處理。藉此，能由IPA取代附著於基板W上之純水，但當基板W上形成有微細圖案的情況下，無法完全取代進入其深處之純水。之後，將流路切換到第二分支配管49，同時藉由油水分離過濾器51除去處理液中之純水、即進行分離除去處理，自混合閥33向供給配管11注入HFE，進行取代促進處理，自混合閥33向供給配管11注入少量的IPA而進行精處理，之後，使挺桿7移動至上方位置。精處理過程中，能利用少量的IPA引出進入基板W之微細圖案深處之純水，故而，能防止純水殘留於基板W之微細圖案中。從而，能防止形成於基板W上之微細圖案倒塌。As described above, with the apparatus of the present embodiment, the control unit 97 cleans the substrate W in the processing tank 1 with pure water while the substrate W is moved to the processing position by the tappet 7, that is, pure water cleaning. The treatment is performed, and IPA is injected from the mixing valve 33 into the supply pipe 11, and the replacement treatment is performed by replacing the pure water with IPA. Thereby, pure water adhering to the substrate W can be replaced by IPA. However, when a fine pattern is formed on the substrate W, pure water entering the depth thereof cannot be completely replaced. After that, the flow path is switched to the second branch pipe 49, and the pure water in the treatment liquid is removed by the oil-water separation filter 51, that is, the separation and removal process is performed, and the HFE is injected from the mixing valve 33 into the supply pipe 11 to perform the substitution promotion process. The self-mixing valve 33 injects a small amount of IPA into the supply pipe 11 to perform finishing treatment, and then moves the tappet 7 to the upper position. In the fine processing, pure water which enters the depth of the fine pattern of the substrate W can be extracted with a small amount of IPA, so that pure water can be prevented from remaining in the fine pattern of the substrate W. Thereby, it is possible to prevent the fine pattern formed on the substrate W from collapsing.
本發明並不限於上述實施形態，可以如下方式變形而實施。The present invention is not limited to the above embodiment, and can be modified as follows.
(1)上述實施例中，利用供給配管11使內槽3與外槽5連通連接，利用泵17使處理液循環，即採用了循環方式，但本發明並不限於該循環方式。(1) In the above embodiment, the inner tank 3 and the outer tank 5 are connected to each other by the supply pipe 11, and the processing liquid is circulated by the pump 17, that is, the circulation method is employed, but the present invention is not limited to this circulation mode.
亦即，構成為：並不將由外槽5回收之處理液返回給供給配管11，而是通過三通閥15進行排液，同時，省略了冷卻單元25、油水分離過濾器51、吸附過濾器55等。當以上述方式構成的情況下，以如下方式進行處理。In other words, the treatment liquid recovered from the outer tank 5 is not returned to the supply pipe 11, but is discharged through the three-way valve 15, and the cooling unit 25, the oil-water separation filter 51, and the adsorption filter are omitted. 55 and so on. In the case of the above configuration, the processing is performed as follows.
控制部97，於藉由挺桿7而使基板W移動至處理位置之狀態下，自混合閥33向處理槽1供給純水，自外槽5排出處理液，對基板W進行純水清洗處理。繼而，自混合閥33向處理槽1供給IPA，而將處理槽1內之純水取代成IPA，利用IPA進行取代處理。藉此，能利用IPA取代附著於基板W上之純水，但當基板W上形成有微細圖案的情況下，無法完全取代進入其深處之純水。繼而，自混合閥33向處理槽1供給HFE，自外槽5排出處理液，且將處理槽1內之IPA取代成HFE，對基板W利用HFE進行取代促進處理。進而，自混合閥33向處理槽1供給IPA，自外槽5排出處理液，且對基板W利用IPA與HFE之混合液進行精處理，使挺桿7移動至上方位置，結束對基板W之處理。精處理過程中，能利用IPA引出已進入基板W之微細圖案深處之純水，故而能防止純水殘留於基板W之微細圖案中。從而，能防止形成於基板W上之微細圖案倒塌。In the state in which the substrate W is moved to the processing position by the tappet 7, the control unit 97 supplies pure water from the mixing valve 33 to the processing tank 1, discharges the processing liquid from the outer tank 5, and performs pure water cleaning treatment on the substrate W. . Then, the IPA is supplied from the mixing valve 33 to the treatment tank 1, and the pure water in the treatment tank 1 is replaced with IPA, and the substitution treatment is performed by IPA. Thereby, the pure water adhering to the substrate W can be replaced by IPA. However, when a fine pattern is formed on the substrate W, the pure water entering the deep portion cannot be completely replaced. Then, HFE is supplied from the mixing valve 33 to the treatment tank 1, the treatment liquid is discharged from the outer tank 5, and the IPA in the treatment tank 1 is replaced with HFE, and the substrate W is subjected to substitution promotion treatment by HFE. Further, IPA is supplied from the mixing valve 33 to the processing tank 1, and the processing liquid is discharged from the outer tank 5. The substrate W is subjected to finishing treatment using a mixed liquid of IPA and HFE, and the tappet 7 is moved to the upper position, and the substrate W is finished. deal with. In the finishing process, pure water which has entered the depth of the fine pattern of the substrate W can be extracted by IPA, so that pure water can be prevented from remaining in the fine pattern of the substrate W. Thereby, it is possible to prevent the fine pattern formed on the substrate W from collapsing.
(2)上述實施例中，採用IPA作為水溶性有機溶劑，採用HFE作為非水溶性有機溶劑，但本發明並不限於該等有機溶劑，亦可採用其他有機溶劑。(2) In the above examples, IPA was used as the water-soluble organic solvent, and HFE was used as the water-insoluble organic solvent. However, the present invention is not limited to the organic solvents, and other organic solvents may be used.
(3)上述實施例中，利用冷卻單元25使處理液冷卻，但亦可省略該部分，不使處理液冷卻便進行純水除去。藉此，可簡化裝置之構成。(3) In the above embodiment, the treatment liquid is cooled by the cooling unit 25, but the portion may be omitted, and pure water may be removed without cooling the treatment liquid. Thereby, the configuration of the device can be simplified.
(4)上述實施例中，係自溶劑噴嘴71供給IPA之蒸氣，但亦可取而代之，供給HFE之蒸氣。而且，亦可省略溶劑噴嘴71，而於精處理之後直接運出基板W。藉此，可簡化裝置之構成。(4) In the above embodiment, the vapor of the IPA is supplied from the solvent nozzle 71, but the vapor of the HFE may be supplied instead. Further, the solvent nozzle 71 may be omitted, and the substrate W may be directly carried out after the finishing treatment. Thereby, the configuration of the device can be simplified.
(5)上述實施例中，利用IPA取代純水之後供給HFE，之後再供給少量的IPA，但亦可取而代之，於利用IPA取代純水之後同時供給HFE及少量的IPA。亦即，亦可供給含有少量的IPA之HFE的處理液。即便如此，亦可獲得與上述實施例相同之作用效果。(5) In the above embodiment, HFE is supplied instead of pure water by IPA, and then a small amount of IPA is supplied. Alternatively, HFE and a small amount of IPA may be supplied simultaneously after replacing pure water by IPA. That is, a treatment liquid containing a small amount of HFE of HFA may be supplied. Even in this case, the same effects as those of the above embodiment can be obtained.
※本發明，可於不脫離其思想或者本質之範圍內以其他具體形態實施，故而，作為表示本發明之範圍之內容，並非以上說明，而應參照隨附之申請專利範圍。The present invention can be implemented in other specific forms without departing from the spirit and scope of the invention, and the scope of the present invention is not described above, but should be referred to the accompanying claims.
※本發明可具體表現為其他特定形式而不偏離其精神或實質屬性，且相應地在指示本發明保護範圍時應參考隨附之申請專利範圍而非前述發明內容。The present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and the scope of the appended claims should be referred to in the accompanying claims.
1．．．處理槽1. . . Processing tank
3．．．內槽3. . . Inner slot
5．．．外槽5. . . Outer slot
7．．．挺桿7. . . Tappet
9．．．噴出管9. . . Ejection tube
11．．．供給配管11. . . Supply piping
13．．．排出口13. . . Discharge
15、19、20、21．．．三通閥15, 19, 20, 21. . . Three-way valve
17．．．泵17. . . Pump
22．．．線內加熱器twenty two. . . Inline heater
23．．．第一分支配管twenty three. . . First branch piping
25．．．冷卻單元25. . . Cooling unit
27．．．注入管27. . . Injection tube
29．．．純水供給源29. . . Pure water supply
31．．．控制閥31. . . Control valve
33．．．混合閥33. . . Mixing valve
35、45、47、61．．．流量控制閥35, 45, 47, 61. . . Flow control valve
37、39．．．藥液配管37, 39. . . Chemical liquid piping
41．．．HFE供給源41. . . HFE supply source
43．．．IPA供給源43. . . IPA supply source
49．．．第二分支配管49. . . Second branch piping
51．．．油水分離過濾器51. . . Oil-water separation filter
53．．．第三分支配管53. . . Third branch piping
55．．．吸附過濾器55. . . Adsorption filter
57．．．靜態攪拌器57. . . Static mixer
58．．．第四分支配管58. . . Fourth branch piping
59、63、65、67、68、69．．．控制閥59, 63, 65, 67, 68, 69. . . Control valve
60．．．注入部60. . . Injection department
70．．．腔體70. . . Cavity
71．．．溶劑噴嘴71. . . Solvent nozzle
73．．．本體部73. . . Body part
75．．．元件75. . . element
77．．．外罩77. . . Cover
79．．．液體導入部79. . . Liquid introduction
81．．．過濾器81. . . filter
83．．．第一儲留部83. . . First reservoir
85．．．第二儲留部85. . . Second reservoir
87．．．流入部87. . . Inflow
89．．．第一排出部89. . . First discharge
91．．．第二排出部91. . . Second discharge
93．．．冷卻管93. . . Cooling tube
95．．．濃度計95. . . Concentration meter
97．．．控制部97. . . Control department
W．．．基板W. . . Substrate
※為了說明發明而圖示出當前較佳之幾個形態，但希望讀明白，本發明並不限於圖示之構成以及方案。In order to explain the invention, the presently preferred embodiments are illustrated, but it is to be understood that the invention is not limited to the illustrated configuration and arrangement.
※為說明本發明，在圖示中展示若干目前較佳之形式，但應理解本發明並不限於所示之排列及工具。In order to illustrate the invention, several currently preferred forms are shown in the drawings, but it should be understood that the invention is not limited to the arrangement and instrument shown.
圖1為表示實施例之基板處理裝置之概略構成的方塊圖。Fig. 1 is a block diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment.
圖2為表示靜態攪拌器之概略構成之縱剖面圖。Fig. 2 is a longitudinal sectional view showing a schematic configuration of a static agitator.
圖3為表示油水分離過濾器之概略構成的縱剖面圖。Fig. 3 is a longitudinal sectional view showing a schematic configuration of a water-water separation filter.
圖4為表示動作之流程圖。Fig. 4 is a flow chart showing the operation.
圖5A至圖5D為用於說明有機溶劑之作用的示意圖。5A to 5D are schematic views for explaining the action of an organic solvent.
圖6A至圖6D為用於說明有機溶劑之作用的示意圖。6A to 6D are schematic views for explaining the action of an organic solvent.
圖7為用於說明IPA與純水之關係的圖。Fig. 7 is a view for explaining the relationship between IPA and pure water.
1．．．處理槽1. . . Processing tank
3．．．內槽3. . . Inner slot
5．．．外槽5. . . Outer slot
7．．．挺桿7. . . Tappet
9．．．噴出管9. . . Ejection tube
11．．．供給配管11. . . Supply piping
13．．．排出口13. . . Discharge
15、19、20、21．．．三通閥15, 19, 20, 21. . . Three-way valve
17．．．泵17. . . Pump
22．．．線內加熱器twenty two. . . Inline heater
23．．．第一分支配管twenty three. . . First branch piping
25．．．冷卻單元25. . . Cooling unit
27．．．注入管27. . . Injection tube
29．．．純水供給源29. . . Pure water supply
31．．．控制閥31. . . Control valve
33．．．混合閥33. . . Mixing valve
35、45、47、61．．．流量控制閥35, 45, 47, 61. . . Flow control valve
37、39．．．藥液配管37, 39. . . Chemical liquid piping
41．．．HFE供給源41. . . HFE supply source
43．．．IPA供給源43. . . IPA supply source
49．．．第二分支配管49. . . Second branch piping
51．．．油水分離過濾器51. . . Oil-water separation filter
53．．．第三分支配管53. . . Third branch piping
55．．．吸附過濾器55. . . Adsorption filter
57．．．靜態攪拌器57. . . Static mixer
58．．．第四分支配管58. . . Fourth branch piping
59、63、65、67、68、69．．．控制閥59, 63, 65, 67, 68, 69. . . Control valve
60．．．注入部60. . . Injection department
70．．．腔體70. . . Cavity
71．．．溶劑噴嘴71. . . Solvent nozzle
87．．．流入部87. . . Inflow
89．．．第一排出部89. . . First discharge
91．．．第二排出部91. . . Second discharge
93．．．冷卻管93. . . Cooling tube
95．．．濃度計95. . . Concentration meter
97．．．控制部97. . . Control department
W．．．基板W. . . Substrate
Claims (18)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007251429 | 2007-09-27 | ||
| JP2008194789A JP5179282B2 (en) | 2007-09-27 | 2008-07-29 | Substrate processing apparatus and substrate processing method |
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| Publication Number | Publication Date |
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| TW200926275A TW200926275A (en) | 2009-06-16 |
| TWI402902B true TWI402902B (en) | 2013-07-21 |
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| TW097135432A TWI402902B (en) | 2007-09-27 | 2008-09-16 | Substrate treating apparatus and substrate treating method |
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| JP (1) | JP5179282B2 (en) |
| KR (1) | KR101025688B1 (en) |
| CN (1) | CN101399183B (en) |
| TW (1) | TWI402902B (en) |
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| JP5829458B2 (en) * | 2011-08-25 | 2015-12-09 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
| JP6006040B2 (en) | 2012-08-27 | 2016-10-12 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
| CN104091775B (en) * | 2014-07-22 | 2017-02-15 | 深圳市华星光电技术有限公司 | wet etching device and etching method thereof |
| JP6370233B2 (en) * | 2015-01-30 | 2018-08-08 | 東京エレクトロン株式会社 | Substrate liquid processing apparatus, substrate liquid processing method, and computer readable storage medium storing substrate liquid processing program |
| JP6468916B2 (en) * | 2015-03-31 | 2019-02-13 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and substrate processing method |
| CN106488737B (en) * | 2015-05-27 | 2018-06-26 | 奥林巴斯株式会社 | Cleaning-sterlizing machine for endoscope |
| JP6603487B2 (en) | 2015-06-22 | 2019-11-06 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and substrate processing method |
| JP6617036B2 (en) * | 2016-01-18 | 2019-12-04 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
| JP6953255B2 (en) * | 2017-09-21 | 2021-10-27 | 株式会社Ｓｃｒｅｅｎホールディングス | Board processing method and board processing equipment |
| KR102673958B1 (en) * | 2019-03-15 | 2024-06-12 | 주식회사 케이씨텍 | Apparatus for Supplying Fluid |
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| TW200707570A (en) * | 2005-06-30 | 2007-02-16 | Tokyo Electron Ltd | Washing device and washing method |
| US20070175387A1 (en) * | 2006-01-30 | 2007-08-02 | Masahiro Kimura | Substrate processing apparatus and substrate processing method |
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| JPH08211592A (en) * | 1995-02-07 | 1996-08-20 | Nikon Corp | Method and device for cleaning and drying |
| JPH11145098A (en) * | 1997-11-13 | 1999-05-28 | Dainippon Screen Mfg Co Ltd | Substrate treatment equipment |
| JPH11186209A (en) * | 1997-12-25 | 1999-07-09 | Dainippon Screen Mfg Co Ltd | Wafer treater |
| JP2002050600A (en) * | 2000-05-15 | 2002-02-15 | Tokyo Electron Ltd | Substrate-processing method and substrate processor |
| JP2001358134A (en) | 2000-06-16 | 2001-12-26 | Dainippon Screen Mfg Co Ltd | Apparatus and method for substrate treatment |
| JP3892749B2 (en) * | 2002-03-29 | 2007-03-14 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
| JP4749173B2 (en) * | 2006-02-10 | 2011-08-17 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
| US20080236639A1 (en) | 2007-03-27 | 2008-10-02 | Masahiro Kimura | Substrate treating apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200707570A (en) * | 2005-06-30 | 2007-02-16 | Tokyo Electron Ltd | Washing device and washing method |
| US20070175387A1 (en) * | 2006-01-30 | 2007-08-02 | Masahiro Kimura | Substrate processing apparatus and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101025688B1 (en) | 2011-03-30 |
| JP5179282B2 (en) | 2013-04-10 |
| CN101399183B (en) | 2010-08-25 |
| CN101399183A (en) | 2009-04-01 |
| TW200926275A (en) | 2009-06-16 |
| KR20090033023A (en) | 2009-04-01 |
| JP2009099943A (en) | 2009-05-07 |
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