TWI399825B - 靜電夾盤組件 - Google Patents

靜電夾盤組件 Download PDF

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Publication number
TWI399825B
TWI399825B TW097139227A TW97139227A TWI399825B TW I399825 B TWI399825 B TW I399825B TW 097139227 A TW097139227 A TW 097139227A TW 97139227 A TW97139227 A TW 97139227A TW I399825 B TWI399825 B TW I399825B
Authority
TW
Taiwan
Prior art keywords
electrostatic chuck
cooling passage
substrate
pattern
grooves
Prior art date
Application number
TW097139227A
Other languages
English (en)
Chinese (zh)
Other versions
TW200926349A (en
Inventor
Jr Douglas A Buchberger
Paul Brillhart
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200926349A publication Critical patent/TW200926349A/zh
Application granted granted Critical
Publication of TWI399825B publication Critical patent/TWI399825B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW097139227A 2007-10-12 2008-10-13 靜電夾盤組件 TWI399825B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/871,807 US7649729B2 (en) 2007-10-12 2007-10-12 Electrostatic chuck assembly

Publications (2)

Publication Number Publication Date
TW200926349A TW200926349A (en) 2009-06-16
TWI399825B true TWI399825B (zh) 2013-06-21

Family

ID=40533966

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097139227A TWI399825B (zh) 2007-10-12 2008-10-13 靜電夾盤組件

Country Status (5)

Country Link
US (1) US7649729B2 (cg-RX-API-DMAC7.html)
JP (1) JP5523326B2 (cg-RX-API-DMAC7.html)
KR (1) KR101135242B1 (cg-RX-API-DMAC7.html)
TW (1) TWI399825B (cg-RX-API-DMAC7.html)
WO (1) WO2009049054A1 (cg-RX-API-DMAC7.html)

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US8608852B2 (en) * 2010-06-11 2013-12-17 Applied Materials, Inc. Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies
CN103222043B (zh) 2010-09-08 2016-10-12 恩特格林斯公司 一种高传导静电夹盘
US10595365B2 (en) * 2010-10-19 2020-03-17 Applied Materials, Inc. Chamber lid heater ring assembly
CN103843129B (zh) * 2011-09-30 2017-03-01 应用材料公司 具有温度控制的静电夹具
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US20130284372A1 (en) * 2012-04-25 2013-10-31 Hamid Tavassoli Esc cooling base for large diameter subsrates
US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
KR20140070049A (ko) * 2012-11-30 2014-06-10 삼성디스플레이 주식회사 기판 지지 유닛 및 이를 갖는 기판 처리 장치
US9916998B2 (en) 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US9685356B2 (en) 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
US8941969B2 (en) 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
US9358702B2 (en) 2013-01-18 2016-06-07 Applied Materials, Inc. Temperature management of aluminium nitride electrostatic chuck
US9669653B2 (en) 2013-03-14 2017-06-06 Applied Materials, Inc. Electrostatic chuck refurbishment
CN105074902B (zh) * 2013-03-29 2018-08-17 住友大阪水泥股份有限公司 静电卡盘装置
US9887121B2 (en) 2013-04-26 2018-02-06 Applied Materials, Inc. Protective cover for electrostatic chuck
US9666466B2 (en) 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US10079165B2 (en) 2014-05-20 2018-09-18 Applied Materials, Inc. Electrostatic chuck with independent zone cooling and reduced crosstalk
US10186444B2 (en) * 2015-03-20 2019-01-22 Applied Materials, Inc. Gas flow for condensation reduction with a substrate processing chuck
JP6799014B2 (ja) * 2015-06-05 2020-12-09 ワトロー エレクトリック マニュファクチャリング カンパニー 高熱伝導率ウェハー支持ペデスタル装置
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
US11837479B2 (en) 2016-05-05 2023-12-05 Applied Materials, Inc. Advanced temperature control for wafer carrier in plasma processing chamber
US20180148835A1 (en) * 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts
KR102640172B1 (ko) 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
US12381105B2 (en) * 2020-02-20 2025-08-05 Lam Research Corporation Coolant channel with internal fins for substrate processing pedestals
WO2021240945A1 (ja) * 2020-05-25 2021-12-02 日本碍子株式会社 静電チャック
US11495483B2 (en) * 2020-10-15 2022-11-08 Applied Materials, Inc. Backside gas leakby for bevel deposition reduction
WO2022146667A1 (en) 2020-12-29 2022-07-07 Mattson Technology, Inc. Electrostatic chuck assembly for plasma processing apparatus
TWI772005B (zh) * 2021-04-28 2022-07-21 錼創顯示科技股份有限公司 半導體晶圓承載結構及有機金屬化學氣相沉積裝置
KR102697860B1 (ko) * 2022-02-08 2024-08-22 (주)아이씨디 정전 장치 및 그 동작 방법

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US20040040664A1 (en) * 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
US20050045106A1 (en) * 2002-09-19 2005-03-03 Boyd Wendell G. Electrostatic chuck having a low level of particle generation and method of fabricating same
TWM264102U (en) * 2004-06-23 2005-05-11 Bing-Wen Tzeng Improvement on cooling structure for mold
US20070075457A1 (en) * 2002-05-15 2007-04-05 Krauss-Maffei Kunststofftechnik Gmbh Molding tool, and method of making plastic articles

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Publication number Priority date Publication date Assignee Title
US20020076939A1 (en) * 2000-10-05 2002-06-20 Applied Materials, Inc. High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers
US20070075457A1 (en) * 2002-05-15 2007-04-05 Krauss-Maffei Kunststofftechnik Gmbh Molding tool, and method of making plastic articles
US20040040664A1 (en) * 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
US20050045106A1 (en) * 2002-09-19 2005-03-03 Boyd Wendell G. Electrostatic chuck having a low level of particle generation and method of fabricating same
TWM264102U (en) * 2004-06-23 2005-05-11 Bing-Wen Tzeng Improvement on cooling structure for mold

Also Published As

Publication number Publication date
JP5523326B2 (ja) 2014-06-18
KR101135242B1 (ko) 2012-04-12
WO2009049054A1 (en) 2009-04-16
TW200926349A (en) 2009-06-16
US7649729B2 (en) 2010-01-19
JP2011501418A (ja) 2011-01-06
KR20090037839A (ko) 2009-04-16
US20090097184A1 (en) 2009-04-16

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