TWI398918B - 選擇性拋光碳化矽薄膜之方法 - Google Patents

選擇性拋光碳化矽薄膜之方法 Download PDF

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Publication number
TWI398918B
TWI398918B TW098141546A TW98141546A TWI398918B TW I398918 B TWI398918 B TW I398918B TW 098141546 A TW098141546 A TW 098141546A TW 98141546 A TW98141546 A TW 98141546A TW I398918 B TWI398918 B TW I398918B
Authority
TW
Taiwan
Prior art keywords
composition
substrate
polishing
acid
cerium oxide
Prior art date
Application number
TW098141546A
Other languages
English (en)
Chinese (zh)
Other versions
TW201030832A (en
Inventor
威廉 沃德
提摩西 強斯
Original Assignee
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW201030832A publication Critical patent/TW201030832A/zh
Application granted granted Critical
Publication of TWI398918B publication Critical patent/TWI398918B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW098141546A 2008-12-04 2009-12-04 選擇性拋光碳化矽薄膜之方法 TWI398918B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20081208P 2008-12-04 2008-12-04
US12/630,288 US9548211B2 (en) 2008-12-04 2009-12-03 Method to selectively polish silicon carbide films

Publications (2)

Publication Number Publication Date
TW201030832A TW201030832A (en) 2010-08-16
TWI398918B true TWI398918B (zh) 2013-06-11

Family

ID=42231565

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098141546A TWI398918B (zh) 2008-12-04 2009-12-04 選擇性拋光碳化矽薄膜之方法

Country Status (9)

Country Link
US (1) US9548211B2 (https=)
EP (1) EP2384258B1 (https=)
JP (1) JP5491520B2 (https=)
KR (1) KR101671042B1 (https=)
CN (2) CN104835732B (https=)
MY (1) MY153077A (https=)
SG (1) SG171909A1 (https=)
TW (1) TWI398918B (https=)
WO (1) WO2010065125A1 (https=)

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US8497210B2 (en) * 2010-10-04 2013-07-30 International Business Machines Corporation Shallow trench isolation chemical mechanical planarization
CN102172851B (zh) * 2011-03-03 2013-03-27 李子恒 等离子脱膜抛光机
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
KR101612520B1 (ko) 2012-05-10 2016-04-14 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 화학 첨가제를 지닌 화학적 기계적 폴리싱 조성물 및 이를 사용하는 방법
JP6106419B2 (ja) * 2012-12-12 2017-03-29 昭和電工株式会社 ＳｉＣ基板の製造方法
US9803109B2 (en) 2015-02-03 2017-10-31 Cabot Microelectronics Corporation CMP composition for silicon nitride removal
US9944829B2 (en) * 2015-12-03 2018-04-17 Treliant Fang Halite salts as silicon carbide etchants for enhancing CMP material removal rate for SiC wafer
KR102462501B1 (ko) 2016-01-15 2022-11-02 삼성전자주식회사 슬러리 조성물을 이용하는 집적회로 소자의 제조 방법
US10294399B2 (en) * 2017-01-05 2019-05-21 Cabot Microelectronics Corporation Composition and method for polishing silicon carbide
WO2019030865A1 (ja) * 2017-08-09 2019-02-14 日立化成株式会社 研磨液及び研磨方法
US11931855B2 (en) * 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
CN114621683A (zh) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
US20220243094A1 (en) * 2021-02-04 2022-08-04 Cmc Materials, Inc. Silicon carbonitride polishing composition and method
CN114407547B (zh) * 2021-12-29 2023-03-07 江苏泰佳新材料科技有限公司 一种耐水洗防伪烫印膜及其制备方法
US20250376604A1 (en) * 2024-06-05 2025-12-11 Entegris, Inc. Silica-based slurry for selective polishing of silicon nitride and silicon carbide

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US20030124850A1 (en) * 2001-12-27 2003-07-03 Kabushiki Kaisha Toshiba Polishing slurry for use in CMPof SiC series compound, polishing method, and method of manufacturing semiconductor device
US20070181535A1 (en) * 2005-09-26 2007-08-09 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
US20080057713A1 (en) * 2006-09-05 2008-03-06 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US20080200033A1 (en) * 2005-09-09 2008-08-21 Asahi Glass Company Limited Polishing compound, method for polishing surface to be polished, and process for producing semiconductor integrated circuit device

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US20030139069A1 (en) * 2001-12-06 2003-07-24 Block Kelly H. Planarization of silicon carbide hardmask material
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US20030124850A1 (en) * 2001-12-27 2003-07-03 Kabushiki Kaisha Toshiba Polishing slurry for use in CMPof SiC series compound, polishing method, and method of manufacturing semiconductor device
US20080200033A1 (en) * 2005-09-09 2008-08-21 Asahi Glass Company Limited Polishing compound, method for polishing surface to be polished, and process for producing semiconductor integrated circuit device
US20070181535A1 (en) * 2005-09-26 2007-08-09 Cabot Microelectronics Corporation Compositions and methods for cmp of semiconductor materials
US20080057713A1 (en) * 2006-09-05 2008-03-06 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers

Also Published As

Publication number Publication date
CN104835732A (zh) 2015-08-12
CN104835732B (zh) 2017-11-14
US20100144149A1 (en) 2010-06-10
TW201030832A (en) 2010-08-16
KR20110106864A (ko) 2011-09-29
WO2010065125A1 (en) 2010-06-10
SG171909A1 (en) 2011-07-28
EP2384258B1 (en) 2016-11-23
EP2384258A1 (en) 2011-11-09
US9548211B2 (en) 2017-01-17
EP2384258A4 (en) 2012-07-18
KR101671042B1 (ko) 2016-10-31
CN102292190A (zh) 2011-12-21
MY153077A (en) 2014-12-31
JP2012511251A (ja) 2012-05-17
JP5491520B2 (ja) 2014-05-14

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