CN104835732B - 选择性地抛光碳化硅膜的方法 - Google Patents

选择性地抛光碳化硅膜的方法 Download PDF

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Publication number
CN104835732B
CN104835732B CN201510122961.4A CN201510122961A CN104835732B CN 104835732 B CN104835732 B CN 104835732B CN 201510122961 A CN201510122961 A CN 201510122961A CN 104835732 B CN104835732 B CN 104835732B
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China
Prior art keywords
silicon carbide
substrate
acid
silica
polishing
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CN201510122961.4A
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English (en)
Chinese (zh)
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CN104835732A (zh
Inventor
W.沃德
T.约翰斯
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201510122961.4A 2008-12-04 2009-12-04 选择性地抛光碳化硅膜的方法 Active CN104835732B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US20081208P 2008-12-04 2008-12-04
US61/200,812 2008-12-04
US12/630,288 US9548211B2 (en) 2008-12-04 2009-12-03 Method to selectively polish silicon carbide films
US12/630,288 2009-12-03
CN2009801551460A CN102292190A (zh) 2008-12-04 2009-12-04 选择性地抛光碳化硅膜的方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2009801551460A Division CN102292190A (zh) 2008-12-04 2009-12-04 选择性地抛光碳化硅膜的方法

Publications (2)

Publication Number Publication Date
CN104835732A CN104835732A (zh) 2015-08-12
CN104835732B true CN104835732B (zh) 2017-11-14

Family

ID=42231565

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201510122961.4A Active CN104835732B (zh) 2008-12-04 2009-12-04 选择性地抛光碳化硅膜的方法
CN2009801551460A Pending CN102292190A (zh) 2008-12-04 2009-12-04 选择性地抛光碳化硅膜的方法

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CN2009801551460A Pending CN102292190A (zh) 2008-12-04 2009-12-04 选择性地抛光碳化硅膜的方法

Country Status (9)

Country Link
US (1) US9548211B2 (https=)
EP (1) EP2384258B1 (https=)
JP (1) JP5491520B2 (https=)
KR (1) KR101671042B1 (https=)
CN (2) CN104835732B (https=)
MY (1) MY153077A (https=)
SG (1) SG171909A1 (https=)
TW (1) TWI398918B (https=)
WO (1) WO2010065125A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010013519B4 (de) * 2010-03-31 2012-12-27 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
JP5695367B2 (ja) * 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US8497210B2 (en) * 2010-10-04 2013-07-30 International Business Machines Corporation Shallow trench isolation chemical mechanical planarization
CN102172851B (zh) * 2011-03-03 2013-03-27 李子恒 等离子脱膜抛光机
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
KR101612520B1 (ko) 2012-05-10 2016-04-14 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 화학 첨가제를 지닌 화학적 기계적 폴리싱 조성물 및 이를 사용하는 방법
JP6106419B2 (ja) * 2012-12-12 2017-03-29 昭和電工株式会社 ＳｉＣ基板の製造方法
US9803109B2 (en) 2015-02-03 2017-10-31 Cabot Microelectronics Corporation CMP composition for silicon nitride removal
US9944829B2 (en) * 2015-12-03 2018-04-17 Treliant Fang Halite salts as silicon carbide etchants for enhancing CMP material removal rate for SiC wafer
KR102462501B1 (ko) 2016-01-15 2022-11-02 삼성전자주식회사 슬러리 조성물을 이용하는 집적회로 소자의 제조 방법
US10294399B2 (en) * 2017-01-05 2019-05-21 Cabot Microelectronics Corporation Composition and method for polishing silicon carbide
WO2019030865A1 (ja) * 2017-08-09 2019-02-14 日立化成株式会社 研磨液及び研磨方法
US11931855B2 (en) * 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
CN114621683A (zh) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
US20220243094A1 (en) * 2021-02-04 2022-08-04 Cmc Materials, Inc. Silicon carbonitride polishing composition and method
CN114407547B (zh) * 2021-12-29 2023-03-07 江苏泰佳新材料科技有限公司 一种耐水洗防伪烫印膜及其制备方法
US20250376604A1 (en) * 2024-06-05 2025-12-11 Entegris, Inc. Silica-based slurry for selective polishing of silicon nitride and silicon carbide

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1248994A (zh) * 1996-12-30 2000-03-29 卡伯特公司 用于氧化物cmp的组合物
CN101263583A (zh) * 2005-09-09 2008-09-10 旭硝子株式会社 研磨剂、被研磨面的研磨方法及半导体集成电路装置的制造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US20030139069A1 (en) * 2001-12-06 2003-07-24 Block Kelly H. Planarization of silicon carbide hardmask material
JP3748410B2 (ja) * 2001-12-27 2006-02-22 株式会社東芝 研磨方法及び半導体装置の製造方法
DE10205280C1 (de) * 2002-02-07 2003-07-03 Degussa Dispersion zum chemisch-mechanischen Polieren
DE60322695D1 (de) * 2002-04-30 2008-09-18 Hitachi Chemical Co Ltd Polierfluid und polierverfahren
US7101832B2 (en) * 2003-06-19 2006-09-05 Johnsondiversey, Inc. Cleaners containing peroxide bleaching agents for cleaning paper making equipment and method
US7300603B2 (en) 2003-08-05 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
WO2005099388A2 (en) 2004-04-08 2005-10-27 Ii-Vi Incorporated Chemical-mechanical polishing of sic surfaces using hydrogen peroixde or ozonated water solutions in combination with colloidal abrasive
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles
US20070218811A1 (en) 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
US7563383B2 (en) * 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7803203B2 (en) * 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
JP2007123759A (ja) * 2005-10-31 2007-05-17 Nitta Haas Inc 半導体研磨用組成物および研磨方法
JP2007157841A (ja) * 2005-12-01 2007-06-21 Toshiba Corp Ｃｍｐ用水系分散液、研磨方法、および半導体装置の製造方法
US7781388B2 (en) * 2006-05-04 2010-08-24 American Sterilizer Company Cleaning compositions for hard to remove organic material
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
JP4523935B2 (ja) * 2006-12-27 2010-08-11 昭和電工株式会社 炭化珪素単結晶基板の研磨用水系研磨スラリー及び研磨法。
US20090269923A1 (en) * 2008-04-25 2009-10-29 Lee Sang M Adhesion and electromigration improvement between dielectric and conductive layers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1248994A (zh) * 1996-12-30 2000-03-29 卡伯特公司 用于氧化物cmp的组合物
CN101263583A (zh) * 2005-09-09 2008-09-10 旭硝子株式会社 研磨剂、被研磨面的研磨方法及半导体集成电路装置的制造方法

Also Published As

Publication number Publication date
CN104835732A (zh) 2015-08-12
US20100144149A1 (en) 2010-06-10
TW201030832A (en) 2010-08-16
KR20110106864A (ko) 2011-09-29
WO2010065125A1 (en) 2010-06-10
SG171909A1 (en) 2011-07-28
EP2384258B1 (en) 2016-11-23
EP2384258A1 (en) 2011-11-09
US9548211B2 (en) 2017-01-17
EP2384258A4 (en) 2012-07-18
KR101671042B1 (ko) 2016-10-31
CN102292190A (zh) 2011-12-21
TWI398918B (zh) 2013-06-11
MY153077A (en) 2014-12-31
JP2012511251A (ja) 2012-05-17
JP5491520B2 (ja) 2014-05-14

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