SG171909A1 - Method to selectively polish silicon carbide films - Google Patents

Method to selectively polish silicon carbide films Download PDF

Info

Publication number
SG171909A1
SG171909A1 SG2011040094A SG2011040094A SG171909A1 SG 171909 A1 SG171909 A1 SG 171909A1 SG 2011040094 A SG2011040094 A SG 2011040094A SG 2011040094 A SG2011040094 A SG 2011040094A SG 171909 A1 SG171909 A1 SG 171909A1
Authority
SG
Singapore
Prior art keywords
composition
substrate
silicon carbide
silicon dioxide
polishing
Prior art date
Application number
SG2011040094A
Other languages
English (en)
Inventor
William Ward
Timothy Johns
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG171909A1 publication Critical patent/SG171909A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG2011040094A 2008-12-04 2009-12-04 Method to selectively polish silicon carbide films SG171909A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US20081208P 2008-12-04 2008-12-04
US12/630,288 US9548211B2 (en) 2008-12-04 2009-12-03 Method to selectively polish silicon carbide films
PCT/US2009/006380 WO2010065125A1 (en) 2008-12-04 2009-12-04 Method to selectively polish silicon carbide films

Publications (1)

Publication Number Publication Date
SG171909A1 true SG171909A1 (en) 2011-07-28

Family

ID=42231565

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2011040094A SG171909A1 (en) 2008-12-04 2009-12-04 Method to selectively polish silicon carbide films

Country Status (9)

Country Link
US (1) US9548211B2 (https=)
EP (1) EP2384258B1 (https=)
JP (1) JP5491520B2 (https=)
KR (1) KR101671042B1 (https=)
CN (2) CN104835732B (https=)
MY (1) MY153077A (https=)
SG (1) SG171909A1 (https=)
TW (1) TWI398918B (https=)
WO (1) WO2010065125A1 (https=)

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JP5695367B2 (ja) * 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US8497210B2 (en) * 2010-10-04 2013-07-30 International Business Machines Corporation Shallow trench isolation chemical mechanical planarization
CN102172851B (zh) * 2011-03-03 2013-03-27 李子恒 等离子脱膜抛光机
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
KR101612520B1 (ko) 2012-05-10 2016-04-14 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 화학 첨가제를 지닌 화학적 기계적 폴리싱 조성물 및 이를 사용하는 방법
JP6106419B2 (ja) * 2012-12-12 2017-03-29 昭和電工株式会社 ＳｉＣ基板の製造方法
US9803109B2 (en) 2015-02-03 2017-10-31 Cabot Microelectronics Corporation CMP composition for silicon nitride removal
US9944829B2 (en) * 2015-12-03 2018-04-17 Treliant Fang Halite salts as silicon carbide etchants for enhancing CMP material removal rate for SiC wafer
KR102462501B1 (ko) 2016-01-15 2022-11-02 삼성전자주식회사 슬러리 조성물을 이용하는 집적회로 소자의 제조 방법
US10294399B2 (en) * 2017-01-05 2019-05-21 Cabot Microelectronics Corporation Composition and method for polishing silicon carbide
WO2019030865A1 (ja) * 2017-08-09 2019-02-14 日立化成株式会社 研磨液及び研磨方法
US11931855B2 (en) * 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
CN114621683A (zh) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
US20220243094A1 (en) * 2021-02-04 2022-08-04 Cmc Materials, Inc. Silicon carbonitride polishing composition and method
CN114407547B (zh) * 2021-12-29 2023-03-07 江苏泰佳新材料科技有限公司 一种耐水洗防伪烫印膜及其制备方法
US20250376604A1 (en) * 2024-06-05 2025-12-11 Entegris, Inc. Silica-based slurry for selective polishing of silicon nitride and silicon carbide

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US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US20030139069A1 (en) * 2001-12-06 2003-07-24 Block Kelly H. Planarization of silicon carbide hardmask material
JP3748410B2 (ja) * 2001-12-27 2006-02-22 株式会社東芝 研磨方法及び半導体装置の製造方法
DE10205280C1 (de) * 2002-02-07 2003-07-03 Degussa Dispersion zum chemisch-mechanischen Polieren
DE60322695D1 (de) * 2002-04-30 2008-09-18 Hitachi Chemical Co Ltd Polierfluid und polierverfahren
US7101832B2 (en) * 2003-06-19 2006-09-05 Johnsondiversey, Inc. Cleaners containing peroxide bleaching agents for cleaning paper making equipment and method
US7300603B2 (en) 2003-08-05 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
WO2005099388A2 (en) 2004-04-08 2005-10-27 Ii-Vi Incorporated Chemical-mechanical polishing of sic surfaces using hydrogen peroixde or ozonated water solutions in combination with colloidal abrasive
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles
US20070218811A1 (en) 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
US7563383B2 (en) * 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
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US7803203B2 (en) * 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
JP2007123759A (ja) * 2005-10-31 2007-05-17 Nitta Haas Inc 半導体研磨用組成物および研磨方法
JP2007157841A (ja) * 2005-12-01 2007-06-21 Toshiba Corp Ｃｍｐ用水系分散液、研磨方法、および半導体装置の製造方法
US7781388B2 (en) * 2006-05-04 2010-08-24 American Sterilizer Company Cleaning compositions for hard to remove organic material
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
JP4523935B2 (ja) * 2006-12-27 2010-08-11 昭和電工株式会社 炭化珪素単結晶基板の研磨用水系研磨スラリー及び研磨法。
US20090269923A1 (en) * 2008-04-25 2009-10-29 Lee Sang M Adhesion and electromigration improvement between dielectric and conductive layers

Also Published As

Publication number Publication date
CN104835732A (zh) 2015-08-12
CN104835732B (zh) 2017-11-14
US20100144149A1 (en) 2010-06-10
TW201030832A (en) 2010-08-16
KR20110106864A (ko) 2011-09-29
WO2010065125A1 (en) 2010-06-10
EP2384258B1 (en) 2016-11-23
EP2384258A1 (en) 2011-11-09
US9548211B2 (en) 2017-01-17
EP2384258A4 (en) 2012-07-18
KR101671042B1 (ko) 2016-10-31
CN102292190A (zh) 2011-12-21
TWI398918B (zh) 2013-06-11
MY153077A (en) 2014-12-31
JP2012511251A (ja) 2012-05-17
JP5491520B2 (ja) 2014-05-14

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