TWI397695B - Probing apparatus for integrated circuit testing - Google Patents

Probing apparatus for integrated circuit testing Download PDF

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TWI397695B
TWI397695B TW99118869A TW99118869A TWI397695B TW I397695 B TWI397695 B TW I397695B TW 99118869 A TW99118869 A TW 99118869A TW 99118869 A TW99118869 A TW 99118869A TW I397695 B TWI397695 B TW I397695B
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substrate
insulating material
integrated circuit
detecting
probe
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TW99118869A
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TW201144814A (en
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Cheng Yi Wang
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Allstron Inc
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  • Measuring Leads Or Probes (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Description

用於積體電路測試之探測裝置 Detection device for integrated circuit test

本發明係有關一種可有效濾除電源或接地點之交流雜訊之用於積體電路測試之探測裝置。 The invention relates to a detecting device for integrated circuit testing which can effectively filter out AC noise of a power source or a grounding point.

在積體電路測試領域中,探針部份是介於探針頭之訊號傳輸線與積體電路待測物之界面。積體電路待測物係可為一半導體晶圓中其中一晶粒,晶粒之表面上會形成有可供探針探觸之銲墊。 In the field of integrated circuit testing, the probe portion is the interface between the signal transmission line of the probe head and the object to be tested. The integrated circuit test object can be one of the semiconductor wafers, and a solder pad for probe detection is formed on the surface of the crystal grain.

一般而言,一探針組具有複數個探針。當電性接觸待測半導體晶粒上之銲墊,能測試其積體電路之電氣特性,藉以判定半導體晶粒是否為良好。良好的半導體晶粒將繼續進行後續之封裝或組裝製程。不良的半導體晶粒將被捨棄或修補,以免增加額外的封裝成本。然而,在積體電路測試之訊號傳輸過程中,除需連接高頻訊號外,常尚須額外供應直流偏壓電源,此直流偏壓電源受到因導通高頻之切換電流結合探針本身之電感(L.di/dt)而產生及耦合電源或接地點之雜訊干擾,造成訊號失真,而無法精確地測量該半導體晶粒之電氣特性。 In general, a probe set has a plurality of probes. When the pads on the semiconductor die to be tested are electrically contacted, the electrical characteristics of the integrated circuit can be tested to determine whether the semiconductor die is good. A good semiconductor die will continue with subsequent packaging or assembly processes. Poor semiconductor dies will be discarded or repaired to avoid additional packaging costs. However, in the signal transmission process of the integrated circuit test, in addition to the connection of the high frequency signal, an additional DC bias power supply is often required. The DC bias power supply is coupled with the inductance of the high frequency switching current combined with the inductance of the probe itself. (L.di/dt) generates and couples noise interference at the power supply or ground point, causing signal distortion and incapability of accurately measuring the electrical characteristics of the semiconductor die.

因此,請參閱第3圖,美國專利US4,764,723號即揭示一種利用氧化鋁基板製作低阻抗傳輸線探針,以供應積體電路穩定之直流偏壓電源,其雖設有電容器c之設置,然而建置有電容器c之基板前端,需縮小至晶片等級尺寸,造成製作過程複雜且成本偏高,並不實際且目前無商業使用。 Therefore, referring to FIG. 3, U.S. Patent No. 4,764,723 discloses a low-impedance transmission line probe using an alumina substrate to supply a DC bias power supply with a stable integrated circuit, which is provided with a capacitor c. The front end of the substrate on which the capacitor c is built needs to be reduced to the wafer level, which results in a complicated manufacturing process and high cost, which is not practical and currently not commercially available.

另外,請參閱第4圖,美國專利US5,373,231號亦揭示有一種具有外建式旁路電容之探測裝置,該探測裝置係包含有一射頻探針a(RF probe)、一線路探針b(wire probe)以及設在該射頻探針與該線路探針之間的電容器c,該射頻探針a與該線路探針b係直接裝設於一探測卡,該電容器c係機械式軟性連接該射頻探針a與該線路探針b,以達到有效降低交流雜訊及確保測試結果之準確性,由於該外建式電容器須裝設於每兩探針之間,成本高且製作費時,雖適用於懸臂式探針之連接裝設,惟,一旦遇到待測試元件之焊墊有高低落差時,兩探針即形成相互干涉與克制,並不理想。並且該線路探針b並未有效屏蔽,無法隔絕耦合雜訊。 In addition, referring to FIG. 4, a detecting device having a built-in bypass capacitor is disclosed in US Pat. No. 5,373,231. The detecting device includes a radio frequency probe a (RF probe) and a line probe b ( a wire probe) and a capacitor c disposed between the RF probe and the line probe, the RF probe a and the line probe b are directly mounted on a probe card, and the capacitor c is mechanically connected to the cable The RF probe a and the line probe b are used to effectively reduce the AC noise and ensure the accuracy of the test result. Since the external capacitor must be installed between every two probes, the cost is high and the production is time consuming, although It is suitable for the connection of the cantilever probe. However, when the solder pads of the component to be tested have high and low drop, the two probes form mutual interference and restraint, which is not ideal. And the line probe b is not effectively shielded, and the coupling noise cannot be isolated.

有鑑於此,本發明人不斷的研發與改善,遂有本發明之產生。 In view of this, the present inventors have continuously developed and improved the present invention.

本發明之主要目的係提供一種可有效濾除電源或接地點之交流雜訊之用於積體電路測試之探測裝置。 The main object of the present invention is to provide a detecting device for integrated circuit testing which can effectively filter out AC noise of a power source or a grounding point.

為達上述之目的,本發明為一種用於積體電路測試之探測裝置,至少包括一基材、一探測針體及一旁路電容,其中該基材係由一內導體經一絕緣材料充填後固定於一外導體內,而該基材末端設有一切面,使內導體、絕緣材料皆外露於該切面上,該探測針體一端係與外露於上述切面之內導體電性連接,而探測針體末端則供用於接觸待測元件之焊墊,而該旁路電容具有第一電極端與第二電極端,其中第一電極端係與探測針體電性連接,第二電極端則與基材末端之外導體相接。 In order to achieve the above object, the present invention is a detecting device for integrated circuit testing, comprising at least a substrate, a detecting pin body and a bypass capacitor, wherein the substrate is filled with an inner conductor via an insulating material. The inner end of the substrate is provided with an inner surface, and the inner conductor and the insulating material are exposed on the cut surface, and one end of the probe body is electrically connected to the inner conductor exposed on the cut surface, and the probe is detected. The end of the needle body is provided for contacting the pad of the component to be tested, and the bypass capacitor has a first electrode end and a second electrode end, wherein the first electrode end is electrically connected to the detecting pin body, and the second electrode end is electrically connected The conductors are joined outside the end of the substrate.

實施時,該基材係為同軸傳輸線結構。 When implemented, the substrate is a coaxial transmission line structure.

實施時,該絕緣材料係聚亞醯胺(polyimide)構成。 When implemented, the insulating material is composed of polyimide.

實施時,該旁路電容係結合於上述外露於上述切面之絕緣材料上。 In practice, the bypass capacitor is bonded to the insulating material exposed above the cut surface.

實施時,該外露於基材末端切面之絕緣材料係突出於基材末端切面,供旁路電容可結合固定於該突出於基材末端切面之絕緣材料上。 In practice, the insulating material exposed on the end surface of the substrate protrudes from the end surface of the substrate, and the bypass capacitor can be bonded and fixed to the insulating material protruding from the end surface of the substrate.

為便於對本發明能有更深入的瞭解,茲藉一實施例詳述於後: In order to facilitate a more in-depth understanding of the present invention, an embodiment is described in detail below:

1‧‧‧基材 1‧‧‧Substrate

10‧‧‧切面 10‧‧‧faced

11‧‧‧內導體 11‧‧‧ Inner conductor

12‧‧‧絕緣材料 12‧‧‧Insulation materials

13‧‧‧外導體 13‧‧‧Outer conductor

2‧‧‧探測針體 2‧‧‧Detecting needle body

3‧‧‧旁路電容 3‧‧‧ Bypass capacitor

31‧‧‧第一電極端 31‧‧‧First electrode end

32‧‧‧第二電極端 32‧‧‧Second electrode end

4‧‧‧探針卡 4‧‧‧ probe card

a‧‧‧射頻探針 a‧‧‧RF probe

b‧‧‧線路探針 B‧‧‧ line probe

c‧‧‧電容器 c‧‧‧Capacitors

第1圖係為本發明實施例探測裝置與探針卡組裝後之立體外觀示意圖。 FIG. 1 is a schematic perspective view showing the assembly of the detecting device and the probe card according to the embodiment of the present invention.

第2a圖係為本發明實施例中旁路電容結合於絕緣材料上之外觀示意圖。 2a is a schematic view showing the appearance of a bypass capacitor combined with an insulating material in the embodiment of the present invention.

第2b圖係為本發明實施例中旁路電容結合於絕緣材料上之外觀示意圖。 Figure 2b is a schematic view showing the appearance of a bypass capacitor bonded to an insulating material in the embodiment of the present invention.

第2c圖係為本發明實施例中旁路電容結合於突出於基材切面絕緣材料上之外觀示意圖。 2c is a schematic view showing the appearance of a bypass capacitor combined with an insulating material protruding from a substrate surface in the embodiment of the present invention.

第3圖係為習用技術美國專利號之結構示意圖。 Fig. 3 is a schematic view showing the structure of a conventional US patent number.

第4圖係為習用技術美國另一專利號之結構示意圖。 Figure 4 is a schematic view of the structure of another US patent number in the prior art.

請參閱第1、2a圖,圖式內容為本發明用於積體電路測試之探測裝置之一實施例,其係由至少包括一基材1、一探測針體2及一旁路電容3所組成。 Please refer to FIG. 1 and FIG. 2a. The figure is an embodiment of the detecting device for the integrated circuit test of the present invention, which is composed of at least a substrate 1, a detecting needle 2 and a bypass capacitor 3. .

該基材1可為同軸電纜或其他傳輸線結構,該基材1係由一內導體11經一絕緣材料12充填後固定於一外導體13內,該絕緣材料12係聚亞醯胺(polyimide)構成。該基材1末端設有一切面10,使內導體11、絕緣材料12皆外露於該切面10上,該探測針體2一端係與外露於上述切面10之內導體11電性連接,而探測針體2末端則供用於接觸待測元件之焊墊,而該旁路電容3具有第一電極端31與第二電極端32,其中第一電極端31係與探測針體2電性連接,第二電極端32則與基材1末端之外導體13相接,藉此,本發明用於積體電路測試之探測裝置裝設於一探針卡4後,進行量測時,探測針體2末端接觸待測元件之焊墊,由於旁路電容3直接連接於探測針體2與基材1之外導體13之間,使外導體13形成接地端,以透過該旁路電容3直接濾除因導 通高頻之切換電流而產生電源或接地點之交流雜訊。此外,基材1之外導體13亦可構成有效之屏蔽,透過控制絕緣材料12之厚度,降低探測針體2阻抗,達成去耦合之目的。 The substrate 1 can be a coaxial cable or other transmission line structure. The substrate 1 is filled in an outer conductor 13 by an inner conductor 11 filled with an insulating material 12. The insulating material 12 is a polyimide. Composition. The end surface of the substrate 1 is provided with a surface 10 such that the inner conductor 11 and the insulating material 12 are exposed on the cutting surface 10. The probe body 2 is electrically connected to the inner conductor 11 exposed to the cutting surface 10 at the end. The end of the needle 2 is provided for contacting the pad of the device to be tested, and the bypass capacitor 3 has a first electrode end 31 and a second electrode end 32, wherein the first electrode end 31 is electrically connected to the probe body 2, The second electrode end 32 is connected to the outer conductor 13 at the end of the substrate 1. Thereby, the detecting device for the integrated circuit test of the present invention is installed on a probe card 4, and when the measurement is performed, the probe body is detected. The end of the 2 contact pad of the device to be tested, because the bypass capacitor 3 is directly connected between the probe body 2 and the conductor 13 outside the substrate 1, so that the outer conductor 13 forms a ground terminal for direct filtering through the bypass capacitor 3. In addition to guide The high frequency switching current produces AC noise at the power or ground point. In addition, the outer conductor 13 of the substrate 1 can also form an effective shielding. By controlling the thickness of the insulating material 12, the impedance of the detecting needle 2 can be lowered to achieve the purpose of decoupling.

實施時,本發明所設之旁路電容3可結合於上述外露於上述切面10之絕緣材料12上(如第2b圖所示),或是,該外露於基材1末端切面10之絕緣材料12係突出於基材1末端切面10,供旁路電容3可結合固定於該突出於基材1末端切面10之絕緣材料12上(如第2c圖所示)。 In practice, the bypass capacitor 3 provided in the present invention may be bonded to the insulating material 12 exposed on the cut surface 10 (as shown in FIG. 2b), or the insulating material exposed on the end surface 10 of the substrate 1 The 12 series protrudes from the end surface 10 of the substrate 1, and the bypass capacitor 3 can be bonded and fixed to the insulating material 12 protruding from the end surface 10 of the substrate 1 (as shown in Fig. 2c).

因此,本發明具有以下之優點: Therefore, the present invention has the following advantages:

1、本發明係於探測針體與基材外導體(接地端)之間直接連接有一旁路電容,即每個探測針體皆獨立具備有一旁路電容,使得進行量測時,不再受限待測元件之焊墊高低不平之影響或受到其他懸臂式探測針體之克制。 1. The invention is characterized in that a bypass capacitor is directly connected between the detecting needle body and the outer conductor of the substrate (grounding end), that is, each detecting needle body is independently provided with a bypass capacitor, so that when measuring, it is no longer subject to Limit the influence of the unevenness of the solder pads of the device to be tested or the restraint of other cantilever probes.

2、本發明所設之旁路電容係直接連接於探測針體與基材末端之外導體之間,使該旁路電容更接近待測元件,有效提高該旁路電容之有效性,進而更有效地濾除電源或接地點之交流雜訊。 2. The bypass capacitor provided by the present invention is directly connected between the detecting pin body and the outer conductor of the substrate end, so that the bypass capacitor is closer to the component to be tested, thereby effectively improving the effectiveness of the bypass capacitor, and thus further Effectively filter out AC noise from power or ground.

3、本發明所設基材之外導體可構成有效之屏蔽,透過控制絕緣材料之厚度,降低探測針體阻抗,達成去耦合之目的。 3. The outer conductor of the substrate provided by the invention can form an effective shielding. By controlling the thickness of the insulating material, the impedance of the detecting needle body is reduced, and the purpose of decoupling is achieved.

以上所述乃是本發明之具體實施例及所運用之技術手段,根據本文的揭露或教導可衍生推導出許多的變更與修正,若依本發明之構想所作之等效改變,其所產生之作用仍未超出說明書及圖式所涵蓋之實質精神時,均應視為在本發明之技術範疇之內,合先陳明。 The above is a specific embodiment of the present invention and the technical means employed, and many variations and modifications can be derived therefrom based on the disclosure or teachings herein. The function shall not be considered to be within the technical scope of the present invention, and it shall be considered in the technical scope of the present invention.

依上文所揭示之內容,本發明確可達到發明之預期目的,提供一種可有效消除高頻反射波或濾除電源或接地點之交流雜訊之用於積體電路測試之探測裝置,具有產業利用與實用之價值無疑,爰依法提出發明專利申請。 According to the above disclosure, the present invention can achieve the intended purpose of the invention, and provide a detecting device for integrated circuit testing which can effectively eliminate high frequency reflected waves or filter AC noise of a power source or a ground point. The value of industrial utilization and practicality is undoubtedly, and the invention patent application is filed according to law.

1‧‧‧基材 1‧‧‧Substrate

10‧‧‧切面 10‧‧‧faced

11‧‧‧內導體 11‧‧‧ Inner conductor

12‧‧‧絕緣材料 12‧‧‧Insulation materials

13‧‧‧外導體 13‧‧‧Outer conductor

2‧‧‧探測針體 2‧‧‧Detecting needle body

3‧‧‧旁路電容 3‧‧‧ Bypass capacitor

31‧‧‧第一電極端 31‧‧‧First electrode end

32‧‧‧第二電極端 32‧‧‧Second electrode end

Claims (5)

一種用於積體電路測試之探測裝置,至少包括:一基材,係由一內導體經一絕緣材料充填後固定於一外導體內,而該基材末端設有一切面,使內導體、絕緣材料皆外露於該切面上;一探測針體,該探測針體一端係與外露於上述切面之內導體電性連接,而探測針體末端則供用於接觸待測元件之焊墊;以及一旁路電容,具有第一電極端與第二電極端,其中第一電極端係與探測針體電性連接,第二電極端則與基材末端之外導體相接。 A detecting device for testing an integrated circuit includes at least: a substrate which is fixed by an inner conductor through an insulating material and fixed in an outer conductor, and the inner end of the substrate is provided with an inner surface, so that the inner conductor, The insulating material is exposed on the cutting surface; a detecting needle body, one end of the detecting needle body is electrically connected to the inner conductor exposed to the cutting surface, and the detecting needle end is provided for contacting the soldering pad of the component to be tested; The circuit capacitor has a first electrode end and a second electrode end, wherein the first electrode end is electrically connected to the detecting pin body, and the second electrode end is connected to the outer conductor end of the substrate end. 如申請專利範圍第1項所述之用於積體電路測試之探測裝置,其中該基材係為同軸傳輸線結構。 The detecting device for integrated circuit testing as described in claim 1, wherein the substrate is a coaxial transmission line structure. 如申請專利範圍第1項所述之用於積體電路測試之探測裝置,其中該絕緣材料係聚亞醯胺(polyimide)構成。 The detecting device for integrated circuit testing according to claim 1, wherein the insulating material is made of polyimide. 如申請專利範圍第1項所述之用於積體電路測試之探測裝置,其中該旁路電容係結合於上述外露於上述切面之絕緣材料上。 The detecting device for integrated circuit testing according to claim 1, wherein the bypass capacitor is coupled to the insulating material exposed on the cut surface. 如申請專利範圍第4項所述之用於積體電路測試之探測裝置,其中該外露於基材末端切面之絕緣材料係突出於基材末端切面,供旁路電容可結合固定於該突出於基材末端切面之絕緣材料上。 The detecting device for the integrated circuit test according to the fourth aspect of the invention, wherein the insulating material exposed on the end surface of the substrate protrudes from the end surface of the substrate, and the bypass capacitor can be combined and fixed to the protruding portion. On the insulating material of the cut end of the substrate.
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TWI647467B (en) * 2018-06-05 2019-01-11 中華精測科技股份有限公司 Chip test module capable of suppressing impedances of different frequency bands of a power source

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TWI564571B (en) * 2014-11-14 2017-01-01 Mpi Corp Cantilever high frequency probe card
TWI564567B (en) * 2014-12-23 2017-01-01 Mpi Corp Probe card and its probe module and signal probe

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