TW200831912A - High frequency probe assembly for IC testing - Google Patents

Abstract

A high frequency probe assembly for IC testing, at least comprises a base, a first probe, a second probe and a terminal SMD (Surface Mound Device) such as resistor or capacitor. Therein, the first and second probes are connected to the base and have an exposed first probing tip and an exposed second probing tip respectively, Two ends of the terminal SMD cross between and are bonded to the first and second probes respectively. Accordingly, high frequency reflection wave or high frequency noise between power and ground probes will be filtered and minimized. Since the terminal SMD components are placed adjacent to the first and second probing tips, the effectiveness of the said components can be maximized by minimizing the distance between DUT and the components.

Description

200831912 IX. Description of the Invention: [Technical Field] The present invention relates to a probe assembly, and more particularly to a high frequency probe set suitable for integrated circuit testing. [Prior Art]

In the field of integrated circuit testing, the probe part is the interface between the signal transmission line of the probe head and the device under test (Device Under Test, DU1TJ. The integrated circuit to be tested can be a semiconductor wafer. One of the grains, the surface of the die will be formed with a pad or bump for the probe to probe. The conductor die (KGD) will continue to be packaged or assembled later. In general, a probe The needle set has a plurality of probes. When electrically contacting the pads or bumps on the semiconductor die to be tested, the electrical characteristics of the integrated circuit can be tested to determine whether the semiconductor die is good. A good semi-semiconductor The die will be discarded or repaired to avoid additional packaging costs. However, during the signal transmission of the integrated circuit test, the high-frequency switching power is applied to the power supply or the grounding point: The interference of the signal, or the high-frequency reflected wave of the transmission structure, causes signal distortion, and cannot accurately measure the electrical characteristics of the semiconductor die. [Invention] The main purpose of the present invention is to provide a suitable The 探针 frequency probe set of the integrated circuit is used to remove the high-frequency noise point of the high-end source or ground point of the probe by engaging the upper-network surface joint component at the exposed portion of the probe. Site & μ & female skin or care for electricity 5

Technical Question 200831912 The high-frequency probe set of the second test of the present invention enables a terminal to be used as a test object of a semiconductor die to enhance the finality. The object of the present invention and solving the technical problems thereof are achieved. According to the invention (4) The high frequency probe set comprises at least one substrate, a first and a terminal surface engaging element. The rhyme (the substrate has an exposed first probe end; the money substrate has an exposed second probe end adjacent to the first probe end and the second probe interface element The object and the solution of the present invention are further achieved. In the above-mentioned high-frequency probe set, the final I i is a crystal-only plastic 13⁄4. In the aforementioned high-frequency probe set, the first needle, the first The second probe system may be a ground probe. In the aforementioned high frequency probe set, the first probe may be a ground probe or in the aforementioned high frequency probe turtle, the first system may In the above-mentioned high-frequency probe set, the final type is suitable for the integrated circuit bonding element closer to a surface bonding element, and the following technique is used to test the integrated circuit test probe. The second probe is disposed on the second probe and is disposed on the terminal surface of the terminal component, and the terminal probe and the second probe can also adopt the following technology: The power probe probe system can be a signal probe I source probe. The probe and the second probe The surface bonding component can be a wafer tantalum capacitor in 200831912. In the aforementioned high frequency probe set, the first probe system can be a power probe, and the second probe can be a ground probe. In the high frequency probe set, the substrate may be a coaxial or other transmission line structure. In the aforementioned high frequency probe set, the substrate may include an insulating dielectric material covering the first probe and In the aforementioned high frequency probe set, the second probe can be connected to the outer casing conductor. In the aforementioned high frequency probe set, the insulating dielectric material can further cover the second probe. In the above-mentioned high-frequency probe set, 'at least one r-th probe may be further included, which is connected to the outer casing of the high-frequency probe set, and the substrate may have one The transmission line structure of the planar conductor. In the aforementioned high frequency probe set, the planar conduction system can be a reference plane. In the aforementioned high frequency probe set, the substrate can include a first probe covering the first probe. Insulating dielectric layer. In the aforementioned high frequency probe set The second probe is connectable to the planar conductor. In the aforementioned high frequency probe set, the insulating layer f can further cover the second probe. In the aforementioned high frequency probe set, Optionally, at least one third probe 7, 200831912, is attached to the planar conductor. In the south frequency probe set described above, the substrate may include an insulating dielectric layer and the insulating dielectric layer. One of the two sides of the power plane and a ground plane, the first probe is connected to the power plane, and the second probe is connected to the ground plane. [Embodiment] The present invention is specifically described in the following specific embodiments. High-frequency probe set for integrated circuit test ^ According to the first embodiment of the present invention, a high-frequency probe set 100 suitable for integrated circuit test can be disclosed, which can be loaded onto a probe card (prope card) ) or other test interface. Referring to Fig. 1, the high frequency probe set 100 includes at least a substrate 11A, a first probe 120, a second probe 13A, and a tantalum terminal surface bonding element 140. In this embodiment, the substrate tether can be coaxial or other transmission line structure. For example, the substrate 11 may include an insulating dielectric material U1 covering the first probe 120 and a case conductor 1 1 2 . The outer casing conductor 11 2 can be a concentric coaxial structure. The first probe 12 is disposed on the substrate 110 and has an exposed first probe end 121, and the second probe 130 is also disposed on the substrate 1 1 〇 and has an exposed The second detecting end i 3丨 is for making conductive contact with a pad or a bump corresponding to a position on the semiconductor die to be tested. In this embodiment, the first probe can be a power probe or a signal probe, and the second probe 130 can be a ground probe. The second probe 13 can be coupled to the outer casing conductor 112. The geometry of the first probe 12〇 and the second probe 130 may be acicular, conical, cylindrical or 8 200831912 strip shape. The design of the first probe 120 and the second probe 130 can be miniaturized to minimize the length of the needle and the parasitic inductance of the first probe 丨2 〇 and the first probe 130 ( Parasitic inductance) is reduced to a minimum. The signal transmission bandwidth is effectively extended because a small parasitic inductance value can be obtained. In this embodiment, the direction of the return current is the pattern of SG, where s denotes a signal probe, and g denotes that the reference plane conductor probe G' together form a tiny loop, the loop area and parasitic inductance The amount is proportional. In various embodiments, the loop current can be in the form of a fixed pattern of GS, GSG, GSSG, and the like. The distal terminal surface engaging element 140 has a first electrode end 141 and a second electrode end 142. Referring to the first embodiment, the terminal surface engaging element 140 is adjacent to the first detecting end ι 21 and the second detecting end 131. Moreover, the first electrode end 141 and the second electrode end 142 of the terminal surface bonding component ι4 are respectively soldered to the first probe and the second probe 130. Further, in the embodiment, the terminal surface is connected. The component 140 can be a wafer type resistor, and the first probe is a signal probe and the second probe 130 is a grounding probe to form an SG coaxial probe structure (SG c〇axial). Pr〇be structure), or the second probe 130 can be a power supply probe, wherein 8 lines indicate a gnal probe 'G system denotes a grounding probe (grouncj pr〇be), so the terminal surface bonding component The 140 series can be configured to be close to the first probe probe, the termination resistor of the 121, and has the effect of filtering out the high frequency reflected wave of the first probe 120. Alternatively, the terminal surface bonding component 14 can be a wafer type capacitor, and the first probe 9 200831912 pin 120 is a power probe 'the second probe 13 is a grounding probe, so the terminal surface bonding component The 140 series is configured as a bypass capacitor close to the probe end 121 of the first probe to filter out high frequency noise generated by the switching current of the high frequency to generate a power source or a ground point. f

Therefore, the terminal surface engaging member 14 has a function of eliminating high frequency reflected waves of the first probe 12 or filtering high frequency noise of a power source or a ground point. Since the terminal surface engaging element 140 is adjacent to the first j-contact 12 丨 and the second probe end 131, and spans and engages the exposed portions of the first probe U0 and the second probe 130, The terminal surface bonding element #i 4 0 is closer to a test object such as a semiconductor die to enhance the effectiveness of the terminal surface bonding component 140. In this embodiment, the distance between the terminal surface bonding component 140 and the die object is controlled to be within a temperature of one tenth of the wavelength of the highest frequency signal component, so that the terminal surface bonding component 14 is more effectively eliminated. - High-frequency reflected waves from the probe 12 or high-frequency noise from the power supply or ground. According to the invention of the present invention, another high-frequency probe set suitable for the integrated circuit test is disclosed. Referring to FIG. 2, the main one is the same as the first embodiment. The material (1), a first pin 120, a second probe 130, and a terminal surface engaging member 14A are not repeated. The high frequency probe set may further comprise at least one probe: a probe 15 connected to the housing guide 112. In the present embodiment, the third probe 15() can be a grounding probe, and the first probe (3) is a signal probe and the first system is grounded to form a GSG coaxial probe structure (GSG coaxial). Probe 10 200831912 structure) 〇 According to the third embodiment of the present invention, a high-frequency probe set which is tested by the i-product Zhao circuit is not disclosed in another example, please refer to the figure shown in Figure 3, and r The ancient frequency probe set 200 includes at least one substrate 21A, - ^ ^ a second probe 230, and a terminal surface contact pin 22 (). In the embodiment, the substrate 21 can be a dual coaxial 隹 贯 w w 1 straddle line structure. For example, the substrate 210 can include an insulating material 211 covering the first pin 2 2 0 and a case conductor 212, and the insulating dielectric material 211 can further cover the second Probe 23〇. The first and second probes 230 are disposed on the substrate 21 and have an exposed first probe end 221 and an exposed second probe. 3 1, used to correspond to a solder pad or bump on the semiconductor die to be tested. In this embodiment, the first probe 220 and the second probe 230 can both be signal probes. Referring to FIG. 3, the terminal surface engaging component 24 is adjacent to the first The first end 241 and the second end 242 of the terminal surface engaging component 240 are respectively soldered to the first probe 22 and the second Probe 230. In this embodiment, the terminal surface bonding component 24 can be an SB chip resistor, so the terminal surface bonding component 24 can be configured to be very close to the terminating resistor of the probe probe terminal. . Therefore, the terminal surface engaging member 24 has the effect of filtering out the high frequency reflected waves of the first probe 220 and the second probe 23 (). Please refer to Figure 3 again, the high-frequency probe set 2〇〇 can be further included 11 200831912 has at least a younger brother

The probe 250 and a fourth probe 260 are connected to the outer casing conductor 212. In the embodiment, the third probe 25 is a ground probe and the fourth probe 260 is a ground probe, and the first probe 220 and the second probe 230 are both signal probes. Needle 'to form a GSSG dual coaxial probe structure (GSSG dual-coaxial pr〇be ... (10) heart).

According to a fourth embodiment of the present invention, another high frequency probe set suitable for integrated circuit testing is disclosed. Referring to FIG. 4, the high frequency probe set 300 includes at least one substrate 31, - The first probe, a second probe 330, and a terminal surface engaging element 34A. The substrate 310 can be a transmission line structure having a planar conductor 312. In the embodiment, the planar conductor 312 can be a reference plane. Usually, the planar conductor 3i2 may be a flat strip-like structure and may be horizontal or vertical. The planar conductor 312 is adjacent to and adjacent to a second semiconductor die to form a complete structure of electrical and mechanical structures. The substrate 3 1 can include an insulating dielectric layer 311 covering the first probe 320 to provide insulation between the first probe and the planar guide 312. In terms of electrical characteristics, the insulating dielectric layer 3U provides a uniform dielectric constant. In terms of mechanical structure, the insulating dielectric layer 3 provides a stable mechanical buckling force 4 connecting the first probe 320 and the planar conductor 313 to form Y complete mechanical members. The substrate 310 is a transfer line structure having a hahaereristic impedance, and is particularly suitable for transmission of high frequency signals. 12200831912 The first probe 320 is disposed on the substrate 31 and has an exposed first probe end 321 , and the second probe 33 is also disposed on the substrate 310 and has an exposed surface. The second probe end 331. Generally, the first probe end 321 of the first probe 320 and the second probe end 33 of the second probe 33 are connected to the tip of the second probe 33 and the pad of the corresponding position on the semiconductor die to be tested or Bump contact. The first probe 32〇 and the second probe 33〇

The other end is directly connected to the signal conductor of the substrate U0 or the planar conductor 312 to form a complete component of the electrical and mechanical structure. In this embodiment, the first probe 32G can be a power probe or a signal probe, and the second probe 330 can be a ground probe. Referring to FIG. 4 again, the terminal surface engaging component is adjacent to the first probe end 321 and the second probe end 331 and one of the terminal surface engaging elements 340 is first-electrode end 341 and a second The extremes 342 are respectively disposed on the first probe 320 and the second probe 33. In the embodiment, the terminal surface bonding component 34 can be a -type resistor and the first probe 320 is For the signal probe, the second = 330 is a grounding probe to form a wooden needle.

• + · ^ SG micr〇strip pr〇be structure, so the terminal surface bonding system can be - very close to the (10) minati〇nresistor of the first probe probe #321. Alternatively, the terminal surface bonding system can be a wafer type capacitor, the first probe 32 can be a pin, and the second probe 330 can be a ground probe, so the final Element 340 can be a pole that is close to the first probe probe end capacitance. Therefore, the surface of the terminal surface is bonded to the surface 340 to have the function of eliminating the high frequency reflected wave of the probe of the 200831912 probe 32 or the high frequency noise of the power source or the grounding point. In addition, the terminal surface engaging component The 〇 system is very close to the object to be tested, such as a semiconductor die, to optimize the effect of the terminal surface bonding element 34. According to the fifth embodiment of the present invention, another high frequency probe set suitable for integrated circuit testing is disclosed. Referring to FIG. 5, the main components are the same as the fourth embodiment, such as a substrate 310. A first zero probe 32 〇, a second probe 33 〇, and a terminal surface engaging element 34 〇 and the like are not repeated. The high frequency probe set may further comprise at least one probe 350 coupled to the planar conductor 312, such that the third probe. The ten-350 series can be a grounding probe, and the first probe system is a probe and the second probe 33 is a grounding probe for the material Λί vj vj needle structure (GSG microstrip pr〇be Structure). Another sixth embodiment of the present invention discloses another high frequency probe set suitable for use in ί circuit testing. Referring to the figure, the _, and 400 includes at least one substrate 410, a first probe 42A, a second probe 430, and a terminal surface engaging member 44A. The 41 4 4 explosive material is a transmission line structure having a planar conductor 412. In the embodiment, the #〜substrate 410 can include a cladding of the first probe.

Jan,. and: 绝缘Insulation dielectric layer 411 of probe 430. The first probe 420 swallowing probes 430 are disposed on the substrate 4 1 〇 and respectively in the summer right center: a probe end 421 and an exposed second probe end 43ι. Its '. The first probe 420 and the second probe 43 can be both signal detectors 14 200831912. See Dan 第 认 A A 1 1 U U U U U U U 421 421 421 421 421 421 The terminal 431 and the first electrode end 441 and the second electrode end 442 of the terminal surface bonding component 440 are respectively soldered to the first probe 42 and the second probe 430 0. The terminal surface bonding component 440 The device can be a wafer type resistor, so the terminal surface bonding component 440 can be a pole close to the probe contact & termination resistor, and the first = pin 420 can be excluded from the The high frequency reflected wave of the second probe 43(). Specifically, the frequency probe set may further include at least a third probe 45, a smear-probe, a third probe 45A, and a fourth probe, a ” planar conductor 412. In this embodiment, the (four) three-probe 45〇_ ^ ^ . is a grounding probe, and the second and second probes 430 are all signal probes, so that the GSSG micro-small portion can be formed. In a different embodiment, the terminal surface bonding component is disposed on the first probe 〇4〇, and the probe 430 and the first and first probes are also soldered. 460, or soldered to the first probe 4+ and the planar conductor 410 | private needle 420 that is, depending on the need for the inflammatory surface engaging component 44, the terminal grounding probe, or It can be soldered to the signal probe and the ^ ^ ^ pin respectively at the two ends of the signal probe and the soldering device, or the two ends can be eight w T a redundant number probe 412. According to the seventh embodiment of the present invention, the signal probe and the planar conductor disclose another high frequency probe set suitable for the test of the integrated circuit of 15 200831912. Please refer to FIG. 7 , the main components and the The fourth embodiment is the same, such as a substrate 3丨〇, a first probe 32 0, a second probe 33〇, and a terminal surface bonding. 3, etc., will not be repeated. In this embodiment, the substrate 3 can further comprise a planar conductor 313. The planar conductor 313 can be a reference plane. In this embodiment, the first The probe 32 is a signal probe and the second probe 330 is a ground probe to form an sg stripline probe structure. According to the eighth embodiment of the present invention, another A high frequency probe set suitable for integrated circuit testing, as shown in FIG. 8, the main components are the same as the sixth embodiment, such as a substrate 4 1 〇, a first probe 420, and a first The probe 430 and a terminal surface engaging component 44 are not repeated here. The substrate 41 can further comprise a planar conductor 413. The planar conductor 413 can be a reference plane. In this embodiment, the The three probes 450 are grounding probes and the fourth probes 46 are grounding probes, and the first probes 420 and the second probes 43 are grounding probes, so that the OSSG belt can be formed. Line probe structure (GSSG strip 1 inepr 〇bestr U cture) In a ninth embodiment of the present invention, another high frequency probe set suitable for integrated circuit testing is disclosed. Referring to FIG. 9, the high frequency probe set 500 includes at least one substrate 51. A probe 52A, a second probe 530, and a terminal surface bonding component 540. The substrate 510 can be a carrier wire structure having planar conductors 512 and 513. In this embodiment, the planar conductors The 512 and 513 series can be vertical 16 200831912 :. The substrate may further comprise an insulating dielectric layer: body: 12 and 513 may be valued on opposite sides of the insulating dielectric layer or in two opposite inner layers, where a ^ 疋 疋 forms two parallel The planar conductor, the insulating dielectric layer covers the planar conductor, and the limb 4 is applicable to the planar conductor 512. The planar conductor 512 can be used as a power source, and the n-electrode is ten-sided. The planar conductor 513 can be a ground. a plane in which the first probe 520 of the armor is connected to the plane conductor 512, and the second probe 53 is connected to the plane guide e

Body (1). The first probe 52G and the second probe (1) have an exposed first probe end 521 and an exposed second probe end 531, respectively. The terminal surface engaging element 540 is adjacent to the first probe end 521 and the second probe end 531, and the first electrode of the terminal surface engaging component (10) and the second electrode end 542 are respectively disposed at the first a probe 520 and the second probe 53 (therefore, the first probe MO is a power probe, and the second probe 53 is a ground probe to form a PG The low-impedance probe structure (pG I.* impedance probe strueture). The terminal surface bonding component can be a wafer type capacitor, so the terminal surface bonding component 54 can be a very close to the probe probe end. Capacitor, thereby filtering high frequency noise generated by switching current of high frequency to generate power or grounding point. According to the tenth embodiment of the present invention, another high frequency probe set suitable for integrated circuit testing is disclosed. As shown in the figure, the high frequency probe set 600 includes at least a substrate 61 〇, a first probe 62 〇, a second probe 63 0 , and a terminal surface engaging member 64 〇. Substrate 610 can be a transmission line structure having planar conductors 612 and 613. In this embodiment, the planar conductors 612 and 613 can be vertical. The substrate 610 can further include an insulating dielectric layer covering the first probe 62 and the second probe 630. 611. The planar conductors 6丨2 and 613 may be located on opposite sides or two opposite inner layers of the insulating dielectric layer 611. Whereas two parallel planar conductors are formed, an insulating dielectric layer covers the planar conductor. Or the planar conductors 6U and 613 can be a reference plane, a ground plane or a power plane. The first probe 620 and the second probe 63 are all attached to the base / The material 61 has an exposed first probe end 621 and an outer probe end 631. The first and second probes 620 and the second probe 63 are respectively For the signal probe, please refer to the figure iO, the terminal surface engaging element pair == a probe end 621 and the second probe end ... and the _ the first electrode end 641 of the cake surface engaging element 640 * _ 极端 Extreme (4) is respectively soldered to the first probe 62. The second 63 〇 the terminal 接合 接合 640 can be The wafer type is such that the terminal surface bonding component 640 is electrically connected to the termination resistor of the probe, so that a probe 620 and the second probe 63 can be eliminated. The high frequency anti-two high frequency probe set _ may further include at least a corpus callosum and a tongue's wall-probe 650 disk-fourth probe _, the third probe 65q is 612, the 笫^ fork , the third probe body 613 in the Wang Wangtong dry-surface conductor embodiment. In this probe or power probe, (4) first probe: and two: = 18 200831912 are all signal probes, so it can form a GSSG stripline probe structure ° above, only It is a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and any skilled person in the art In the scope of the technical solutions of the present invention, when the above-mentioned technical contents are used to make some modifications or modifications to equivalent embodiments, the present invention does not deviate from the technical solutions of the present invention. Any modification, equivalent change, and modification made by the embodiments are still within the scope of the technical scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of a high frequency probe set suitable for use in a stack circuit test in accordance with a first embodiment of the present invention. Figure 2 is a perspective view of another high frequency probe set suitable for I integrated circuit testing in accordance with a second embodiment of the present invention. Figure 3 is a perspective view of another high frequency probe set suitable for integrated circuit testing in accordance with a third embodiment of the present invention. Section 4: A perspective view of another high frequency probe set suitable for integrated circuit testing in accordance with a fourth embodiment of the present invention. Figure 5 is a perspective view of another high frequency probe set suitable for integrated circuit testing in accordance with a fifth embodiment of the present invention. Figure: is a perspective view of another high frequency probe set suitable for integrated circuit testing in accordance with a sixth embodiment of the present invention. 19 200831912 Figure 7: A perspective view of another high frequency probe set suitable for integrated circuit testing in accordance with a seventh embodiment of the present invention. Figure 8 is a perspective view of another high frequency probe set suitable for integrated circuit testing in accordance with an eighth embodiment of the present invention. Figure 9 is a perspective view of another high frequency probe set suitable for integrated circuit testing in accordance with a ninth embodiment of the present invention.

Fig. 10 is a perspective view showing another high frequency probe set suitable for integrated circuit testing in accordance with a tenth embodiment of the present invention. [Main component symbol description] 100 high frequency probe set 112 outer case conductor 212 outer case conductor 110 base material 111 insulating dielectric material 120 first probe 121 first probe end 130 second probe 131 second probe end 140 terminal Surface bonding element 141 first electrode end 142 second electrode end 150 third probe 200 high frequency probe set 210 substrate 211 insulating dielectric material 220 first probe 221 first probe end 230 second probe 231 Second probe terminal 240 terminal surface engaging element 241 first electrode end 242 second electrode end 250 third probe 260 fourth probe 300 high frequency probe set 20 200831912 l, 310 substrate 311 insulating dielectric layer 313 planar conductor 320 first probe 321 first probe end 330 second probe 331 second probe end 340 terminal surface engagement element 341 first electrode end 342 second electrode end 350 third probe 400 high frequency probe set 410 base 411 insulating dielectric layer 413 planar conductor 420 first probe 421 first probe end 430 second probe 431 second probe end 440 terminal surface bonding element 441 first electrode end 442 second electrode end 450 third Probe 460 Probe 500 High Frequency Probe Set 510 Substrate 511 Insulating Dielectric Layer 513 Planar Conductor 520 First Probe 521 First Probe End 530 Second Probe 531 Second Probe End 540 Terminal Surface Bonding Element 541 First Power Extreme 542 second electrode end 600 high frequency probe set 610 substrate 611 insulating dielectric layer 312 planar conductor 412 planar conductor 512 planar conductor 612 planar conductor 21 200831912 613 planar conductor 620 first probe 621 630 second probe 631 640 Terminal surface engaging element 641 first electrode end 642 650 third probe 660 〇 first probe end second probe end second electrode end fourth probe 22

Claims (1)

200831912 X. Applying for a patented version · · A high-frequency probe set for a integrated circuit test, a substrate, a first probe, which is attached to the substrate and has an exposed first Probe, a second probe, which is (4) the substrate and has a second probe end that is __ exposed; and c, a final surface-engaging element adjacent to the first-probe end and the second probe The contact end and the two ends of the terminal surface engaging component are respectively disposed on the first probe and the second probe. For example, the high frequency probe set suitable for integrated circuit testing, as described in the scope of claim 4, wherein the terminal surface bonding component is a wafer type resistor. The high frequency probe set suitable for integrated circuit testing as described in claim 2 of the patent scope wherein the first probe is a power probe and the second probe is a ground probe. (4 * The high-frequency probe set suitable for the integrated circuit test described in the item 2, wherein the first probe is a signal probe, and the second probe is a ground probe or a power source The probe is a high-frequency probe set suitable for the integrated circuit test as described in the second item of the fourth patent scope, wherein the first probe and the second probe system are both signal probes. The high-frequency probe set for the integrated circuit test described in the first paragraph of the patent scope, wherein the terminal surface bonding component is a chip-type capacitor. 7. Applicable to the product as described in claim 6 The height of the body circuit test is 23,319,319, the frequency probe set, wherein the first probe is a power probe, and the second probe is a ground probe. 8. The application is applicable to the product as described in the scope of the patent application. a high frequency probe set for testing a bulk circuit, wherein the substrate is a coaxial or other transmission line structure. 9 A high frequency probe set suitable for integrated circuit testing as described in claim 8 of the scope of the patent application, wherein The substrate comprises an insulating dielectric material covering the first probe and a housing conductor. η 10, wherein the second probe is connected to the outer casing conductor as described in claim 9 of claim 9 , wherein the second probe is connected to the outer casing conductor. The A-frequency probe set suitable for the integrated circuit test, wherein the insulating dielectric material further covers the second probe. 12. The same frequency probe suitable for the integrated circuit test as described in the scope of claim 5 The needle set further includes at least one third probe connected to the outer casing conductor. I. The same frequency probe set suitable for integrated circuit testing as described in claim 1 of the patent application, wherein the substrate A transmission line structure having a planar conductor. 14 A high frequency probe set suitable for integrated circuit testing as described in claim 13 of the claim, wherein the planar conduction system is a reference plane. The high frequency probe set for the integrated circuit test described in the thirteenth aspect of the patent, wherein the substrate comprises an insulating dielectric layer covering the first probe, as recited in claim 15 High frequency probe for the integrated circuit test a group, wherein the second probe is connected to the planar conductor. 24 200831912 1 7. The surface frequency probe set suitable for integrated circuit testing, as described in Item ii of the application patent (4), wherein the insulating dielectric is The layer further covers the second probe. The high frequency probe set suitable for integrated circuit testing as described in claim 17 of the patent scope, further comprising at least a third probe connected to the plane 19. The same frequency probe set suitable for integrated circuit testing as described in claim 13 wherein the substrate comprises an insulating dielectric layer and a power supply on both sides of the insulating dielectric layer. The plane and a ground plane are connected to the power plane, and the second probe is connected to the ground plane. U 25