JPS62279650A - Probe for measurment of electrical characteristics of semiconductor wafer - Google Patents

Abstract

PURPOSE:To attain the accurate measurement of electrical characteristics in a high-frequency region by providing plural transmission lines on a dielectric substrate in parallel and elastically deforming their front end rising parts as contact parts in order to stabilize the presetting of a characteristic impedance. CONSTITUTION:Plural transmission lines 12 are arranged on a dielectric substrate 11 in parallel and thier front ends are raised to form a space between rising parts 13, 13' and the underlying substrate 11, or the rising parts 13, 13' are made to function as contact parts by filling the space with an elastic member 17. An insulating member 15 is bonded on the substrate 11 while sandwiching the lines 12 except the contact parts and a conductor 16 is bonded on the surface of the insulator 15. Consequently, the stabilization of the presetting of a characteristic impedance, enhancement in number of terminals, steady contact, and reduction of strokes can be attained. Accordingly, the accurate measurement of electrical characteristics in a high-frequency region can be effected.

Description

Detailed Description of the Invention 3. Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a probe needle for measuring electrical characteristics of ICs, LSIs, etc. on semiconductor wafers.

(Prior Art) Conventionally, in order to measure the electrical characteristics of ICs, LSIs, etc. on the wafer 1 shown in FIG. 6, a probe needle as shown in FIG. A coaxial type probe needle 6 is constructed by protruding the signal line 4 from the center of the tip of the coaxial cable 3, attaching a ground part to the outer periphery of the tip of the coaxial cable 3, and bringing the tip of the ground part parallel to the tip of the signal line 4 by about 200 μm. As shown in the figure, a method is adopted in which parameters are measured by setting the measuring device 7 on an arm 8 movable in the x, y, and z axes directions and bringing it into contact with a pad 2 of an IC, LSI, etc. on the wafer 1.

(Problem to be Solved by the Invention) By the way, in the above-mentioned coaxial type probe needle 6, since the signal line 4 and the ground part do not have a coaxial structure over several 11 points at the tip of the coaxial cable 3, the characteristic impedance changes in that part. Therefore, it was not possible to accurately measure electrical characteristics in the high frequency range. Furthermore, this structure made it impossible to provide multiple terminals. Furthermore, since the signal line 4 and the ground part of the probe needle 6 are not shielded,
That is, there was a problem of large noise.

On the other hand, in recent years, ICs and LSIs have been developed to have higher densities and higher speeds, and as a result, probers for evaluating these devices are needed to stabilize characteristic impedance, increase the number of terminals, and ensure reliable connection with pads on the wafer. It is necessary to have a probe needle that can reduce contact and cocoon talk, and the development of this is urgently needed.

Therefore, the present invention aims to provide a probe needle that can stabilize characteristic impedance settings, have multiple terminals, ensure reliable contact, and reduce crosstalk, and can accurately measure electrical characteristics in a high frequency region. be.

(Means for solving the problem) The probe needle of the first invention for solving the above problem is as follows:
A plurality of parallel rows of transmission lines are provided on a dielectric substrate, and the tip of each transmission line is raised upward to form a space between the raised portion and the dielectric substrate, or an elastic The structure is formed by filling the body with a raised part to serve as a contact part, adhering an insulator to at least a dielectric substrate with a transmission line in between, excluding the contact part, and bonding a conductor to at least the upper surface of the insulator. It is something.

The probe needle of the second invention is the probe needle of the first invention in which ground lines are provided in parallel on the dielectric substrate on both sides of each transmission line.

The probe needle of the third invention is the same as the probe needle of the first invention, by forming through holes at regular intervals in the longitudinal direction of both left and right ends and applying conductive plating to the upper surface of the insulator and the lower surface of the dielectric substrate. It is a conductor that is electrically connected.

In the probe needle of the fourth invention, in the probe needle of the third invention, ground lines are provided in parallel on the dielectric substrate on both sides of each transmission line, and the conductor is provided on the upper surface of the insulator and the lower surface of the dielectric substrate. It is made by conducting.

(Embodiments) Various embodiments of the probe needle of the first invention will be described with reference to FIGS. 1a to 1C.

The probe needle 10 shown in FIG. 1a is made of alumina (AZZ0
3) length 4f)n, width 1011, thickness 0,6
In the longitudinal direction on the +11 dielectric substrate 11, a thickness of 3μ,
Transmission lines 12 made of Cu and having a width of 150μ are arranged in three rows in parallel with an interval of 200μ, and the tip of each transmission line 12 is bent upward into a double-shape to be raised to a height of 100μ. A space 14 is formed between the raised portion 13 and the dielectric substrate 11 below, and the raised portion 13 serves as a contact portion. An insulator 15 made of polyimide with a thickness of 100μ is adhered on the dielectric substrate 11 except for this contact part, sandwiching the transmission line 12, and a conductor made of Cu with a thickness of 3μ is on the upper surface of the insulator 15. 16 are joined.

The probe needle 10' shown in FIG. 1A has the tip of each transmission line 12 on the same dielectric substrate 1 as shown in FIG. An elastic material 17 is provided between the lower part 13' and the dielectric substrate 11.
For example, a protruding portion 13' filled with polyimide serves as a contact portion, and an insulator 1 made of alumina with a thickness of 100 μm is placed on the dielectric substrate 11 sandwiching the transmission line except for this contact portion.
A conductor 16 made of Cu and having a thickness of 3 μm is bonded to the upper surface of the insulator 15' and the lower surface of the dielectric substrate 11.

The probe needle 10'' shown in FIG. 1C has the insulator 15 of the probe needle 10 shown in FIG. is glued around the entire circumference.

Next, various embodiments of the probe needle of the second invention will be described with reference to FIGS. 2a to 2C.

The probe needle 18 shown in FIG. 2a has a ground line made of Cu with a thickness of 3μ and a width of 150μ on the dielectric substrate 11 between each transmission line 12 of the probe needle 10 shown in FIG. 1a and on both sides thereof. A probe needle 19 is provided in parallel with the transmission line 12 with an interval of 200 μm, and the other configuration is the same as the probe needle 10 in FIG. 1a.

The probe needle 20 shown in FIG. 2 has a ground made of Cu with a thickness of 3 μm and a width of 150 μm on a dielectric substrate 11 between each transmission line 12 of the probe needle 10′ shown in FIG. The line 19 is provided in parallel with the transmission line 12 with an interval of 200μ, and the other configuration is the first line.
This is the same as the probe needle 10' shown in the figure.

The probe needle 21 shown in FIG. 2C has a ground made of Cu with a thickness of 3μ and a width of 150μ on the dielectric substrate 11 between each transmission line 12 of the probe needle 10'' shown in FIG. 1C and on both sides thereof. The line 19 is provided in parallel with the transmission line 12 with an interval of 200μ, and the other configuration is the first line.
It is the same as the probe needle 10'' in Figure C.

Next, various embodiments of the probe needle of the third invention will be described with reference to FIG.

The probe needle 22 shown in FIG. 3 has through holes 23 with a diameter of 1 + n formed at intervals of 3011 in the longitudinal direction of both left and right ends of the probe needle 10' shown in FIG. The conductors 16 on both the upper and lower surfaces are electrically connected to each other.

Incidentally, the raised portion 13' at the tip of the transmission line 12 of the probe needle 22 may be replaced with the raised portion 13 at the tip of the transmission line 12 shown in FIG. 1A.

Next, various embodiments of the probe needle of the fourth invention will be described with reference to FIG.

The probe needle 25 shown in FIG. 4 has a ground line 19 made of Cu with a thickness of 3 μm and a width of 150 μm on the dielectric substrate 11 between the transmission lines 12 of the probe needle 22 shown in FIG. 3 and on both sides thereof. It is provided parallel to the line 12 with an interval of 200 μm, and the other configuration is the same as the probe needle 22 in FIG. 3.

Incidentally, the raised portion 13' at the tip of the transmission line 12 of the probe needle 26 may be replaced with the raised portion 13 at the tip of the transmission line 12 shown in FIG. 1A.

As mentioned above, each probe needle 10, 10', 10" of the present invention
, 18.20.21.22.25.26, three rows of transmission lines 12 are provided in parallel on a dielectric substrate 11, so the transmission line 12 has a strip line structure. The characteristic impedance does not change and is constant at any part. Therefore, the probe needle of the embodiment, for example, the probe needle 10 shown in FIG. When the electrical characteristics were measured by contacting the pad 2 of an LSI or the like, it was possible to accurately measure the electrical characteristics in a high frequency region, in this example, at a high frequency of 30 GH2. Furthermore, even if this measurement is repeated, it is found that the tip of each transmission line 12 is provided with a protrusion 13 or 13', and a space 14 is formed below the protrusion 13 or 13', or an elastic material 17 is filled with the protrusion. Since the parts 13 and 13' are designed to be elastically deformable, when they come into contact with the pads 2 of IC1LSI etc. on the wafer 1 to be measured in the electrical characteristic measurement,
The contact portions of each transmission line 12 do not collapse and are always in reliable and stable contact. Furthermore, since each transmission line 12 on the dielectric substrate 11 is sandwiched between insulators 15 and electrically shielded, external noise is reduced and crosstalk between each transmission line 12 is reduced. Ru. Also,
The conductor 16 is bonded to the upper surface of the insulator 15, the upper surface of the insulator 15 and the lower surface of the dielectric substrate 11, the same surface of the insulator 15 and the dielectric substrate 11 in a superposed state, etc., to form at least two conductive layers. Therefore, it is extremely stable with respect to the characteristic impedance setting. In particular, in the case of the third and fourth inventions in which the upper surface of the insulator 15 and the conductor 16 on the lower surface of the dielectric substrate 11 are electrically connected through the through holes 23, the setting of the characteristic impedance is extremely stable. Furthermore, dielectric substrate 1
Ground line 1 between each transmission line 12 on 1 and outside of each transmission line 12
In the case of the second and fourth inventions in which the transmission line 9 is provided, the space between each transmission line 12 is shielded, and the wolf talk is further reduced.
Almost no noise is generated.

Note that the dielectric base vi11 of the probe needle in each of the above embodiments is as follows:
It is made of alumina, but quartz may also be used. Also,
Although the transmission lines 12 are arranged in three rows in each of the above embodiments, the number of transmission lines 12 is not limited to this.
There may be 0 columns or 100 columns.

Furthermore, the insulator may be made of a mixture of alumina and polyimide. In addition, on the conductor 16, A
U plating may also be applied.

(Effects of the Invention) As can be seen from the above description, the probe needle of the present invention has a plurality of parallel rows of transmission lines provided on a dielectric substrate, so the transmission line has a strip line structure. Therefore, the setting of the characteristic impedance can be stabilized, the characteristic impedance can be made constant at any part of each transmission line, and multi-terminals can be realized by using multiple rows of transmission lines. In addition, the probe needle of the present invention has elastic deformation of the protrusion at the tip of each transmission line, which is the contact part, so that it will not be crushed even if it comes into contact with the band of IC, LSI, etc. on the wafer to be measured. , always ensure stable contact. In addition, each transmission line is sandwiched between insulators and a ground line is provided between or outside the transmission lines, so each transmission line is electrically shielded, reducing external noise, and each Crosstalk between transmission lines is reduced and noise is significantly reduced. Furthermore, since the conductor is bonded to at least the upper surface of the insulator to form the conductive layer, the setting of characteristic impedance is extremely stable. In particular, when conductors are bonded to both the upper and lower surfaces and conduction is established through through-hole plating, the characteristic impedance setting is extremely stable. In this way, it is possible to accurately, reliably and stably measure the electrical characteristics of ICs, LSIs, etc. on high-density, high-speed semiconductor devices in the high frequency range.

[Brief explanation of drawings]

1A to C are perspective views showing various embodiments of the first invention according to the present invention, FIGS. 2A to C are perspective views showing various embodiments of the second invention according to the present invention, and FIG. Figures a and b
4A and 4B are perspective views respectively showing various embodiments of the fourth invention according to the present invention, and FIG. 5 is a perspective view showing various embodiments of the third invention according to the present invention. FIG. 6 is a perspective view of a conventional coaxial probe needle, and FIG. 7 is a schematic diagram showing the coaxial probe needle of FIG. 6 in use. Applicant: Tanaka Kikinzoku Kogyo Co., Ltd. 20. 21...Bloof Total Figure 6 Procedural Amendment (Method) % Formula % 1. Indication of the case 1985 Patent Application No. 123111 2. Name of the invention Semiconductor wafer electrical Characteristic measurement probe needle 3, relationship with the person making the amendment Patent applicant 6, contents of amendment (1) “a and b are each” on page 13, line 18 of the specification
is corrected to "ha". (2) Delete "Various types of" on page 13, line 19. (3) On page 13, lines 19 and 20, "a and b are each of various types of the fourth invention according to the present invention" is amended to "are the fourth invention according to the present invention".

Claims (1)

[Scope of Claims] 1) A plurality of parallel rows of transmission lines are provided on a dielectric substrate, and the tip of each transmission line is raised upward to form a space between the tip of the transmission line and the dielectric substrate below the raised portion. A space is formed or an elastic material is filled to make the raised part a contact part, and an insulator is bonded to at least the dielectric substrate with the transmission line in between, except for this contact part, and at least the upper surface of the insulator is A probe needle for measuring the electrical characteristics of a semiconductor wafer, which is made by bonding a conductor to a semiconductor wafer. 2) A plurality of parallel rows of transmission lines are provided on a dielectric substrate, and the tip of each transmission line is raised upward to form a space between it and the dielectric substrate below the raised portion. Alternatively, the protrusions are filled with an elastic material to serve as contact parts, and ground lines are provided in parallel on the dielectric substrate on both sides of each of the transmission lines, and at least the transmission lines and A probe needle for measuring electrical characteristics of a semiconductor wafer, comprising an insulator bonded to sandwich a ground line, and a conductor bonded to at least the upper surface of the insulator. 3) A plurality of parallel rows of transmission lines are provided on a dielectric substrate, and the tip of each transmission line is raised upward to form a space between it and the dielectric substrate below the raised portion. Alternatively, an elastic material is filled to make the raised part a contact part, and an insulator is bonded to at least the dielectric substrate across the transmission line except for the contact part, and the upper surface of this insulator and the lower surface on the side of the dielectric substrate are A probe needle for measuring the electrical characteristics of a semiconductor wafer, which is made by bonding a conductor to the wafer, drilling through holes at regular intervals in the longitudinal direction of both left and right ends, and applying conductive plating to conduct the conductive sheets on both the upper and lower surfaces. 4) A plurality of parallel rows of transmission lines are provided on a dielectric substrate, and the tip of each transmission line is raised upward to form a space between it and the dielectric substrate below the raised portion. Alternatively, the protrusions are filled with an elastic material to serve as contact parts, and ground lines are provided in parallel on the dielectric substrate on both sides of each of the transmission lines, and at least the transmission lines and An insulator is bonded across the ground line, a conductor is bonded to the top surface of this insulator and the bottom surface of the dielectric substrate side, and through holes are drilled at regular intervals in the longitudinal direction of both left and right ends and conductive plating is applied. A probe needle for measuring the electrical characteristics of semiconductor wafers, which is made by connecting conductive sheets on both the upper and lower surfaces.