JPH06101501B2 - Semiconductor substrate for measuring high frequency characteristics of semiconductor devices - Google Patents

Description

TECHNICAL FIELD The present invention relates to a semiconductor substrate for measuring high frequency characteristics for measuring high frequency characteristics of a semiconductor device used in a high frequency band of, for example, several + MHz or more, In particular, the present invention relates to a semiconductor substrate for high frequency characteristic measurement in which a required chip size is reduced.

[Prior Art] FIG. 4 (a) is a plan view showing a conventional semiconductor substrate for high frequency characteristic measurement as a part of a semiconductor device to be measured, and FIG. 4 (b) is a flowchart of FIG. 4 (a). It is sectional drawing which follows the B line. In the figure,
(1) is a semiconductor substrate for measuring high frequency characteristics, and (7) is a chip of a semiconductor device to be measured provided adjacent to the semiconductor substrate.
Two input / output signal pads (4) connected to the signal transmission line (3) and four ground electrode pads (6) are provided on the main surface of the semiconductor substrate (1) for measuring high frequency characteristics. In addition, a backside ground metal layer (2) serving as a backside grounding conductive layer is formed on the backside. The ground electrode pad (6) and the backside ground metal layer (2) are electrically connected to each other through a via hole (5) formed through the semiconductor substrate (1).

Next, a usage mode of the semiconductor substrate (1) for high frequency characteristic measurement of FIG. 4 will be described with reference to FIG. FIG. 5 (a) is a perspective view showing the probing needle tip of the high-frequency semiconductor wafer prober, and the probing needle tip is grounded to the signal line (9) provided on the back surface of the ceramic body (8). It has a coplanar line structure with a line (10). As shown in FIG. 5 (b), this probing needle is used as a semiconductor substrate (1) for measuring high frequency characteristics.
The high frequency characteristics of the semiconductor device under test on the chip (7) are measured by contacting the input / output signal pad (4) and the ground electrode pad (6). After the measurement of the high frequency characteristic, the chip (7) of the semiconductor device to be measured and the semiconductor substrate (1) for high frequency characteristic measurement are cut as shown in FIG. 5 (c), and the semiconductor device to be measured is used.

[Problems to be Solved by the Invention] Since the price of GaAs wafers or GaAlAs wafers used in ICs operating in the high frequency band is 10 times or more the price of Si wafers, the cost of semiconductor devices is reduced. For this purpose, it is necessary to reduce the chip size, especially the size of the semiconductor substrate (1) for measuring high frequency characteristics, which is discarded after the measurement. However, in the conventional semiconductor substrate (1) for measuring high frequency characteristics as described above, the required number of ground electrode pads (6) and the number of via holes (5) related thereto are determined, so that the chip size is reduced. There was a limit to what

An object of the present invention is to improve the structure of a semiconductor substrate for measuring high frequency characteristics and reduce its chip size.

[Means for Solving the Problem] The semiconductor substrate for high frequency characteristic measurement of the present invention is configured by arranging each ground electrode pad and via hole so that a plurality of ground electrode pads share one via hole. There is.

[Operation] In the semiconductor substrate for high frequency characteristic measurement of the present invention, since the plurality of ground electrode pads share one via hole, the number of via holes can be reduced, and the semiconductor substrate for high frequency characteristic measurement can be reduced accordingly. The area can be reduced and the chip size can be reduced.

[Embodiment] FIG. 1 (a) is a plan view showing a first embodiment of a semiconductor substrate for measuring high frequency characteristics of the present invention together with a part of a semiconductor device to be measured, and FIG. It is sectional drawing which follows the ii line of (a). In this figure, the same parts as those of the conventional semiconductor substrate for high frequency characteristic measurement shown in FIG. 4 are designated by the same reference numerals.
That is, (1) is a semiconductor substrate for measuring high frequency characteristics of the present invention, on its main surface, two input / output signal pads (4) connected to a signal transmission line (3) and four ground electrode pads. (61) to (64) are provided, and a backside ground metal layer (2) serving as a backside ground conductive layer is formed on the back side. (51) and (52) are via holes formed through the semiconductor substrate (1), and two ground electrode pads are associated with each via hole. That is, the via hole (5
1) is shared by two ground electrode pads (61) and (62), and the via hole (52) is shared by the other two ground electrode pads (63) and (64). (7) is a high frequency band IC chip as a semiconductor device to be measured, which is provided adjacent to the semiconductor substrate (1) for measuring high frequency characteristics. In this embodiment, only two via holes are required for the same four ground electrode pads as the conventional one, and the chip size of the semiconductor substrate for high frequency characteristic measurement can be reduced by the space required for the two via holes. it can.

FIG. 2 shows a second example of the semiconductor substrate for measuring high frequency characteristics of the present invention.
In the example of FIG. 1, one via hole (50) is formed in the semiconductor substrate (1) for high frequency characteristics measurement, and four ground electrode pads (61) to (64) are formed in the via hole (50) as a semiconductor. Connections are made via conductive films (11) and (11) provided on the surface of the substrate. In this embodiment, since only one via hole is required for four ground electrode pads, the chip size of the semiconductor substrate for measuring high frequency characteristics can be further reduced.

FIG. 3 is a third view of a semiconductor substrate for measuring high frequency characteristics of the present invention.
In the above embodiment, the semiconductor substrate (1) for high frequency characteristic measurement is provided with two via holes (51) and (52).
The four ground electrode pads (61) to (64) and the input / output signal pad (4) are all provided on a high frequency band IC chip (7) as a semiconductor device to be measured. In the third embodiment, two via holes, four ground electrode pads, and two ground electrode pads and 2 are provided as compared with the conventional semiconductor substrate for measuring high frequency characteristics.
The chip size of the semiconductor substrate for high frequency characteristic measurement can be reduced by an amount corresponding to each input / output signal pad.

[Advantages of the Invention] As described above, according to the present invention, the chip size of the semiconductor substrate for measuring high-frequency characteristics, which is discarded after the high-frequency characteristics are measured, can be significantly reduced. There is an effect that can be lowered.

[Brief description of drawings]

1A is a plan view showing a first embodiment of a semiconductor substrate for measuring high frequency characteristics of the present invention together with a part of a semiconductor device to be measured, and FIG. 1B is a plan view of FIG. 1A. FIG. 2 is a plan view showing a second embodiment of a semiconductor substrate for measuring high frequency characteristics of the present invention together with a part of a semiconductor device to be measured, and FIG. 3 is a high frequency view of the present invention. A plan view showing a third embodiment of a semiconductor substrate for characteristic measurement together with part of a semiconductor device to be measured, and FIG. 4 (a) shows a conventional semiconductor substrate for high frequency characteristic measurement together with part of the semiconductor device to be measured. 4A is a plan view, FIG. 4B is a cross-sectional view taken along the line Loro of FIG. 4A, and FIG. 5 is a view showing a usage state of the conventional semiconductor substrate for measuring high frequency characteristics shown in FIG. FIG. 1A is a perspective view showing the tip of the probing needle of the high-frequency semiconductor wafer prober. ) Is a perspective view showing a state in which the tip portion of the probing needle is applied to the semiconductor substrate for high frequency characteristic measurement, and FIG. 7C is a plan view showing a state in which the semiconductor substrate for high frequency characteristic measurement after measurement and the semiconductor device to be measured are separated. Is. (1) …… Semiconductor substrate for high frequency characteristic measurement, (2) …… Backside ground conductive layer, (50), (51) (52) …… Via hole, (61), (62), (63), ( 64) ... Ground electrode pad.

Claims (1)

[Claims] 1. A via hole for electrically connecting a plurality of ground electrode pads provided on a main surface of a semiconductor substrate and a back surface ground conductive layer formed on a back surface, characterized by
A semiconductor substrate for measuring a high frequency characteristic of a semiconductor device, wherein the ground electrode pad and the via hole are arranged so that a plurality of ground electrode pads are connected to the back side ground conductive layer by a single via hole.