JPH04274338A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a probing pad for measuring high frequency which enables an area of a semiconductor device to be reduced. CONSTITUTION:Via holes 51-54 which are produced on a semiconductor element 1 conduct not only on ground potential probing pads 61, 62, 67, and 68 on the semiconductor element but also a ground potential probing pad on the adjacent semiconductor element so that the ground potential can be supplied from a surface of the adjacent semiconductor element and a probing pad region to be disposed after measurement of high-frequency characteristic can be eliminated from an area on the wafer.

Description

[Detailed description of the invention]

0001

[Industrial Application Field] The present invention relates to a semiconductor device.
In particular, it is an object of the present invention to provide a new pattern of probing pads for high frequency measurements of semiconductor devices operating in a high frequency band (0.1 GHz to several tens of GHz).

0002

2. Description of the Related Art FIG. 5 is a plan view showing a conventionally used probing pad provided between a plurality of semiconductor elements together with a region where the probing pad is formed. Also, Figure 6
6 is a sectional view taken along the line VI-VI in FIG. 5. FIG. In the figure, 1 is a semiconductor element. Reference numeral 10 denotes a probing pad region provided adjacent to the semiconductor element 1 and sandwiched between the two semiconductor elements 1.

Two input/output signal probing pads 4 are formed on the surface of the probing pad region 10, each connected to the signal transmission lines 3 of two adjacent semiconductor devices. When performing high frequency measurements using such probing pads, one or more ground potential probing pads are placed adjacent to one input/output signal probing pad 4 (with a pad spacing of several tens to several hundred μm). Since probing pads are required, a total of four ground potential probing pads 61 to 64 are formed on the surface of the probing pad region 10. Also, a via hole 5 is provided on the surface of the probing pad region 10.
1 and 52 are also formed, which provide conduction between the front and back surfaces of the semiconductor element. Further, a back ground metal layer 2 serving as a back ground conductive layer is formed on the back surface of the semiconductor element.

The conventional probing pad for high frequency measurement is constructed as described above, and the four ground potential probing pads 61 to 64 are arranged in pairs of two, and the two ground potential probing pads 61 of the two sets are , 62 and 63
, 64 are grounded through via holes 51 and 52, respectively. For example, ground potential probing pads 61 and 62 are connected to the via hole 51, and ground potential probing pads 63 and 64 are connected to the via hole 52.

[0005]

The conventional semiconductor device is constructed as described above, and in order to measure high frequency characteristics, a probing pad area is also formed on the input/output side of the chip. For this reason, the area per chip is large, and the number of chips that can be manufactured on one wafer is reduced, which is a factor in deteriorating manufacturing costs.

The present invention was made to solve the above problems, and aims to provide a semiconductor device that can eliminate the probing pad area and reduce the area per semiconductor element. do.

[0007]

[Means for Solving the Problems] A semiconductor device according to the present invention is a device in which a ground potential probing pad, which was in a probing pad area, is formed on the semiconductor device together with a via hole, and the chip size is reduced. Therefore, by supplying the ground potential of the ground potential probing pads constituting the high frequency probing pads from the adjacent semiconductor device, the ground potential probing pads that need to be placed adjacent to the high frequency input/output signal pads on the wafer surface can be The structure is such that the ground potential is obtained from a via hole of an adjacent semiconductor device.

[0008]

In the probing pad of the present invention, both the input/output signal probing pad and the ground potential probing pad are formed on the semiconductor element, so that the ground potential on the backside of the wafer is supplied to the ground potential probing pad on the semiconductor device. As a result, the probing pad area can be eliminated, and the IC pattern can also be placed in the area that was the conventional probing pad area. Also,
In order to share the ground potential on the surfaces of adjacent semiconductor devices,
An increase in the area of the semiconductor device due to an increase in the number of via holes can also be suppressed.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view of a semiconductor device according to an embodiment of the present invention. Further, FIG. 2 is a cross-sectional view taken along the line II-II in FIG. 1. In the figure, parts equivalent to those of the semiconductor device shown in other figures are given the same numbers.

In FIGS. 1 and 2, reference numeral 1 denotes a semiconductor device having a probing pad according to an embodiment of the present invention, and a back ground metal layer 2 serving as a back ground conductive layer is formed on the back surface of the semiconductor device 1.
is formed. Via holes 51 to 54 are formed through the semiconductor device 1 . Each via hole is
1 on the semiconductor device 1 where the via holes 51 and 54 are located.
The two ground potential probing pads 61 and 67 are electrically connected to one ground potential probing pad 62 and 68 on the surface of the semiconductor device 1 adjacent thereto. For example, the via hole 51 connects a ground potential probing pad 61 on the surface of the semiconductor device 1 with the ground potential probing pad 62 on the surface of the adjacent semiconductor device. Further, FIG. 3 shows a state in which a probing needle for high frequency measurement is brought into contact with a probing pad for high frequency measurement. In the figure, 7 is the tip of a probing needle for high frequency measurement, 8 is a ground line, and 9 is a signal line.

[0011] In the high frequency probing pad configured as described above, not only the probing pad area 10, which was necessary in the past, is no longer necessary;
Since the ground potential of the ground potential probing pad for high frequency probing is supplied by the adjacent semiconductor device, the area can also be reduced accordingly. Therefore, the overall area of the semiconductor device can be reduced.
The manufacturing cost of semiconductor devices can be reduced.

FIG. 4 shows a probing pad for high frequency measurement of a semiconductor device according to another embodiment of the present invention. This high-frequency measurement probing pad has one ground potential probing pad 61 parallel to the input/output signal pad 4, and has one via hole and the semiconductor element 1 compared to the embodiment shown in FIG. The area can be further reduced.

In the above description, the case where the present invention is applied to a two-port semiconductor device has been described, but it goes without saying that the present invention can also be applied to other multi-port semiconductor devices, and the same effects as those of the above-mentioned embodiments can be obtained. play.

[0014]

As described above, according to the semiconductor device according to the present invention, the ground potential probing pad constituting the probing pad for high frequency measurement necessary when performing high frequency probing can be provided on the semiconductor device together with the via hole. In order to increase the size of the chip and reduce the chip size,
Since the ground potential of the ground potential probing pads constituting the high frequency probing pads is supplied from the adjacent semiconductor device, it is possible to eliminate the probing pad area from the wafer that is discarded after measuring high frequency characteristics.
The area of each chip can be reduced, and the area of the semiconductor device as a whole can be reduced.

[Brief explanation of the drawing]

FIG. 1 is a plan view showing an example of the configuration of a probing pad of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a sectional view taken along line II-II in FIG. 1;

FIG. 3 is a perspective view showing a state in which a probing needle for high frequency measurement is brought into contact with the probing pad of FIG. 1;

FIG. 4 is a plan view showing a second embodiment of the invention.

FIG. 5 is a plan view showing a conventional probing pad substrate together with a part of a semiconductor device.

FIG. 6 is a sectional view taken along line VI-VI in FIG. 5;

[Explanation of symbols]

1 Semiconductor device 2 Back ground metal layer 3 Signal transmission line 4 Input/output signal probing pads 51 to 54
Via holes 61 to 64 Ground potential probing pad 7
High frequency measurement probing needle 8 Ground line 9 Signal line 10 Probing pad area

Claims (1)

[Claims] [Claim 1] In a plurality of high frequency semiconductor devices having probing pads for high frequency measurements provided adjacent to each other on a wafer, a ground potential forming the probing pads for high frequency measurements required when performing high frequency probing. A semiconductor device characterized in that a probing pad is formed together with a via hole on the semiconductor device, and the ground potential of the ground potential probing pad is supplied from mutually adjacent semiconductor devices.