JPS6341042A - Semiconductor substrate for measuring high-frequency characteristic - Google Patents
Semiconductor substrate for measuring high-frequency characteristicInfo
- Publication number
- JPS6341042A JPS6341042A JP18571786A JP18571786A JPS6341042A JP S6341042 A JPS6341042 A JP S6341042A JP 18571786 A JP18571786 A JP 18571786A JP 18571786 A JP18571786 A JP 18571786A JP S6341042 A JPS6341042 A JP S6341042A
- Authority
- JP
- Japan
- Prior art keywords
- electrode pad
- semiconductor substrate
- frequency characteristics
- chip
- measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 title claims abstract description 18
- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000005259 measurement Methods 0.000 abstract description 12
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 238000007664 blowing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、例えば数十ＭＨｚ以上の高周波帯で動作す
る半導体装置の高周波特性の測定を容易にする高周波特
性測定用の半導体基板に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a semiconductor substrate for measuring high frequency characteristics, which facilitates the measurement of high frequency characteristics of a semiconductor device that operates in a high frequency band of several tens of MHz or higher, for example. be.
第３図（ａ）は従来の高周波帯ＩＣチップの一例を示す
平面図、第３図（ｂ）は第３図（ａ）の■、−■ｂ線に
おける断面図である。これらの図において、１はＩＣチ
ップ、２ａは入力用電極パッド、２ｂは出力用電極パッ
ド、３は裏面接地金属である。そして、第３図（ｂ）に
示すように、ＩＣチップ１の入力用電極パッド２ａおよ
び出力用電極パッド２ｂは、マイクロストリップライン
となっている。FIG. 3(a) is a plan view showing an example of a conventional high-frequency band IC chip, and FIG. 3(b) is a cross-sectional view taken along lines 2 and -2b in FIG. 3(a). In these figures, 1 is an IC chip, 2a is an input electrode pad, 2b is an output electrode pad, and 3 is a back ground metal. As shown in FIG. 3(b), the input electrode pad 2a and the output electrode pad 2b of the IC chip 1 are microstrip lines.
次に、このＩＣチップ１の高周波特性の測定方法につい
て説明する。Next, a method for measuring the high frequency characteristics of this IC chip 1 will be explained.
第４図は測定用の治具を用いてＩＣチップ１の高周波特
性の測定を行っている状態を示す平面図である。この図
において、４は測定用の治具、５はチップキャリアであ
る。FIG. 4 is a plan view showing a state in which the high frequency characteristics of the IC chip 1 are being measured using a measuring jig. In this figure, 4 is a measurement jig, and 5 is a chip carrier.
第４図に示すように、従来はＩＣチップ１を個別に分割
し、チップキャリア５等に組立後、測定用の治具４を使
用して高周波特性の測定を行っていた。As shown in FIG. 4, in the past, the IC chip 1 was divided into individual parts, assembled into a chip carrier 5, etc., and then the high frequency characteristics were measured using a measuring jig 4.
上記のような従来のＩＣチップ１て゛は、ＩＣチップ１
を個別に分割し、チップキャリア５等に組立後、測定用
の治具４を使用して高周波特性の測定を行っているため
、１個の測定に数十分の時間を必要とするという問題点
があった。また、測定用の治具４に起因する寄生容量や
共振のため、測定精度が低いという間；頂点もあった。The conventional IC chip 1 as described above is
The problem is that it takes several tens of minutes to measure one piece because the high-frequency characteristics are measured using the measurement jig 4 after dividing the chips into individual pieces and assembling them into chip carriers 5 and the like. There was a point. Furthermore, there were also peaks in which measurement accuracy was low due to parasitic capacitance and resonance caused by the measurement jig 4.
この発明は、かかる問題点を解決するためになされたも
ので、高周波特性を短時間に高い精度で測定することが
可能な高周波特性測定用の半導体基板を得ることを目的
とする。The present invention was made in order to solve such problems, and an object of the present invention is to obtain a semiconductor substrate for high frequency characteristic measurement that can measure high frequency characteristics in a short time and with high accuracy.
この発明に係る高周波特性測定用の半導体基板は、裏１
■に接地金属を有する半導体基板の一主面上に被測定半
導体装置の入力用電極パッドまたは出力用電極パッドに
接続される伝送線路を形成し、この伝送線路を一定の間
隔で挾むように前記接地金属とそれぞれバイアホールを
介して接続された接地用電極パッドを形成したものであ
る。The semiconductor substrate for measuring high frequency characteristics according to the present invention has a back side
(2) A transmission line connected to the input electrode pad or output electrode pad of the semiconductor device under test is formed on one principal surface of the semiconductor substrate having a ground metal, and the ground is placed between the transmission line at a fixed interval. Grounding electrode pads are connected to metal via via holes.
〔作用〕
この発明においては、高周波特性測定用の半導体基板を
被測定半導体装置に接続することにより、高周波帯ウェ
ハ・プローバのブロービングニードルを用いての高周波
特性の測定が可能となる。[Operation] In the present invention, by connecting a semiconductor substrate for measuring high frequency characteristics to a semiconductor device to be measured, high frequency characteristics can be measured using a blowing needle of a high frequency band wafer prober.
第１図（ａ）はこの発明の高周波特性測定用の半導体基
板の一実施例を示す平面図、第１図（ｂ）は第１図（ａ
）の１．−Ｉｂ線における断面図である。これらの図に
おいて、６は半導体基板、７は前記半導体基板６の裏面
に形成した裏面接地金属、８ａは伝送線路、８ｂ、８ｃ
は接地用電極パッドで、バイアホール９を介して裏面接
地金属７と接続されている。FIG. 1(a) is a plan view showing an embodiment of a semiconductor substrate for measuring high frequency characteristics of the present invention, and FIG.
) 1. It is a sectional view taken along the line -Ib. In these figures, 6 is a semiconductor substrate, 7 is a back ground metal formed on the back surface of the semiconductor substrate 6, 8a is a transmission line, 8b, 8c
is a grounding electrode pad, which is connected to the back ground metal 7 via a via hole 9.
第２図（ａ）【よこの発明の高周波特性測定用の半導体
基板を被測定半導体装置としてのＩＣチップ１に接続し
ｔコ状態を示す平面図で、ＩＣチップ１の入力用電極パ
ッド２ａおよび出力用電極パッド２ｂをそれぞれワイヤ
ボンデ、Ｃノブ等を用いて伝送線路８ａに接続している
。FIG. 2(a) is a plan view showing a state in which a semiconductor substrate for measuring high frequency characteristics of the present invention is connected to an IC chip 1 as a semiconductor device to be measured; The output electrode pads 2b are connected to the transmission line 8a using wire bonders, C knobs, etc., respectively.
また、第２図（ｂ）は高周波帯ウェハ・ブローバのブロ
ービングニードル先端部を示す斜視図で、このブロービ
ングニードル先端部はセラミック製のボデ（１０の裏面
に、信号線路９ａ、接地線路９ｂ、９ｃを持つコプレナ
ライン構造となっている。FIG. 2(b) is a perspective view showing the tip of the blowing needle of the high-frequency band wafer blower. , 9c.
すなオ）ち、ブロービングニードルとの整合性が高い第
１図に示したこの発明の高周波特性測定用の半導体基板
を第２図（ａ）に示すようにＩＣチップ１に接続するこ
とにより、第２図（Ｃ）に示すように、ブロービングニ
ードルの先端部を密着させての高周波帯ウェハ・ブロー
ビングが可能となる。In other words, by connecting the semiconductor substrate for high frequency characteristic measurement of the present invention shown in FIG. 1, which has high compatibility with the blobbing needle, to the IC chip 1 as shown in FIG. 2(a). As shown in FIG. 2(C), it is possible to perform high frequency band wafer blowing with the tip of the blowing needle in close contact.
この結果、チップキャリア５の組み立ての手間が不要と
なり、測定時間が短縮される。また、測定用の治具４に
起因する寄生容量や共振が発生しないため、高精度で高
周波特性を測定できる。As a result, there is no need to assemble the chip carrier 5, and the measurement time is shortened. Further, since parasitic capacitance and resonance caused by the measurement jig 4 do not occur, high-frequency characteristics can be measured with high accuracy.
この発明は以上説明したとおり、裏面に接地金属を有す
る半導体基板の一主面上に被測定半導体装置の入力用電
極パッドまたは出力用電極パッドに接続される伝送線路
を形成し、この伝送線路を一定の間隔で挾むように前記
接地金属とそれぞれバイアホールを介して接続された接
地用電極パッドを形成したので、被測定半導体装置に接
続することにより、高周波特性を短時間に高い精度で測
定することが可能になるという効果がある。As explained above, this invention forms a transmission line connected to an input electrode pad or an output electrode pad of a semiconductor device under test on one main surface of a semiconductor substrate having a ground metal on the back surface, and Since grounding electrode pads are formed that are connected to the ground metal via via holes at regular intervals, high frequency characteristics can be measured with high precision in a short time by connecting to the semiconductor device under test. This has the effect of making it possible.
第１図はこの発明の高周波特性測定用の半導体基板の一
実施例を示す図、第２図はこの発明による高周波特性の
測定を説明するための図、第３図は従来のＩＣチップを
示す図、第４図は従来のＩＣチップの高周波特性の測定
を説明するための図である。
図において、６は半導体基板、７は裏面接地金属、８ａ
は伝送線路、８ｂ、８ｃは接地用電極パッド、９はバイ
アホールである。
なお、各図中の同一符号は同一または相当部分を示す。
代理人 大 岩 増 雄 （外２名）第１図
９バイアホール
第２図FIG. 1 is a diagram showing an embodiment of a semiconductor substrate for measuring high frequency characteristics according to the present invention, FIG. 2 is a diagram for explaining the measurement of high frequency characteristics according to the present invention, and FIG. 3 is a diagram showing a conventional IC chip. 4 are diagrams for explaining the measurement of high frequency characteristics of a conventional IC chip. In the figure, 6 is a semiconductor substrate, 7 is a back ground metal, and 8a
is a transmission line, 8b and 8c are grounding electrode pads, and 9 is a via hole. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 9 Via Hall Figure 2
Claims (1)
半導体装置の入力用電極パッドまたは出力用電極パッド
に接続される伝送線路を形成し、この伝送線路を一定の
間隔で挾むように前記接地金属とそれぞれバイアホール
を介して接続された接地用電極パッドを形成したことを
特徴とする高周波特性測定用の半導体基板。A transmission line connected to an input electrode pad or an output electrode pad of a semiconductor device to be measured is formed on one main surface of a semiconductor substrate having a ground metal on the back surface, and the ground is placed between the transmission lines at regular intervals. A semiconductor substrate for measuring high frequency characteristics, characterized in that a grounding electrode pad is formed, each connected to a metal via a via hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18571786A JPS6341042A (en) | 1986-08-06 | 1986-08-06 | Semiconductor substrate for measuring high-frequency characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18571786A JPS6341042A (en) | 1986-08-06 | 1986-08-06 | Semiconductor substrate for measuring high-frequency characteristic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6341042A true JPS6341042A (en) | 1988-02-22 |
Family
ID=16175619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18571786A Pending JPS6341042A (en) | 1986-08-06 | 1986-08-06 | Semiconductor substrate for measuring high-frequency characteristic |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6341042A (en) |
-
1986
- 1986-08-06 JP JP18571786A patent/JPS6341042A/en active Pending
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