JPH03286542A - High-frequency band wafer prober - Google Patents

Abstract

PURPOSE:To enable contact to be made even to a wafer with somewhat poor flatness with improved yield and to reduce possible prober head damage caused by strong hitting by the prober head, by providing a plurality of springs between a foundation and a probing stage to provide elasticity to the probing stage. CONSTITUTION:Assuming that a prober head 2 hits against a wafer 8 with poor flatness, a metal conductor line 5 which contacted one of electrode pads 6 pushes that part, the pressed stage sinks, and other electrode pads 6, a transmission line 7, and a remaining metal conductor line 5 contact one another. Also, load which is applied to the probe head can be reduced due to elasticity of springs 9 of the probing stage 1 even if the probe head hits against the wafer excessively.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor evaluation device, and particularly to high frequency characteristic measurement of a semiconductor device operating in a high frequency band of several tens of MHz or more.

[Conventional technology]

FIG. 3(a) is a sectional view showing a conventional high frequency band wafer prober. In the figure, (1) is a probing stage, (2) is a probe head, and (3) is a base.

Next, a method for measuring high frequency characteristics of a semiconductor device operating in a high frequency band using the above prober will be explained.

FIG. 3(b) is a perspective view showing a state in which the probe head (2) is in contact with the wafer (8) when performing high frequency measurement of a semiconductor device with a prober.

In the figure, +8]1 is a wafer, (8) is a probe needle body, (5) is a metal conductor line, (6) is an electrode pad, and (7) is a transmission line.

As shown in Fig. 3(a), in the past, the probing stage fll (,) was fixed on a base (3), and the probing head (2) was lowered onto the probing stage from above. As in b), the high frequency characteristics were measured by contacting the wafer (8).

FIG. 3(e) is a sectional view showing a state in which the probe head (2) is in contact with the wafer (8) and is defective.

[Problem to be solved by the invention]

Conventional high-frequency band wafer flow bars are constructed as described above, and when a wafer with poor flatness is used,
), it was sometimes difficult to make contact. or,
There were problems such as the possibility of damaging the probe head by applying too much force to the wafer.

This invention was made to solve the above-mentioned problems, and it is possible to obtain a high-frequency band wafer blobber that can contact even wafers with somewhat poor flatness with a high yield. The purpose of the present invention is to obtain a high-frequency band wafer prober that can reduce the possibility of damaging the probe head by applying too much force.

(Means for Solving Problems j) The high frequency band wafer prober according to the present invention is provided with a plurality of bent springs between the base and the probing stage to give elasticity to the probing stage.

[Effect]

Since the high-frequency band wafer prober of the present invention employs the above-mentioned means, it can contact even wafers with somewhat poor flatness with good yield, and also reduces the possibility of damaging the probe head due to too strong contact. I can do it.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, symbols (11, (21, f31) in the figure are equivalent to those in the conventional example. (9) is a plurality of springs provided between the probing stage (1) and the base (4).

Next, the operation will be explained.

In the prober configured in this way, if the probe head (2) hits a wafer with poor flatness as shown in Figure 3(C), the metal conductor line that has contacted one of the electrode pads (6) first (5) Accordingly, that part is pushed, and the pushed stage sinks as shown in Figure 2 (a), and the other electrode pad (8) and the transmission stage sink as shown in Figure 2 (b). line (7) and the remaining metal conductor line (
5) makes contact. Also, because of the elasticity of the probing stage, the load on the probe head is reduced even when it is applied too strongly.

Here, Fig. 2(a) is a cross-sectional view showing the state when the spring sinks during measurement and contact is made between the wafer (8) and the probe head (2), and Fig. 2(b) is a cross-sectional view of this state. FIG. 3 is an enlarged cross-sectional view of the contact portion between the probe head and the wafer at the time of the test. Note that (1) to (9) in FIGS. 2(a) and (b) are the same as those in the above embodiment.

Further, in the above embodiment, a spring (4) is provided between the probing stage (11) and the base (3), but it may be made of rubber, and the same effect can be achieved as long as it has a drawing force. play.

〔Effect of the invention〕

As described above, according to the present invention, the probing stage is supported by springs and configured to have elasticity, so that even wafers with somewhat poor flatness can be contacted with high yield and high frequency characteristics can be measured. A strip wafer prober can be obtained. Further, there is an effect that the possibility of the probe head hitting the wafer too strongly during contact and causing damage is reduced.

[Brief explanation of drawings]

Fig. 1 is a front view showing an embodiment of the high frequency wafer probe of the present invention, Fig. 2 is a diagram for explaining the measurement of high frequency characteristics according to the present invention, and Fig. 3 is a diagram showing the high frequency characteristics of a conventional high frequency band wafer probe. FIG. 2 is a diagram for explaining when to measure. In the figure, (1) is a probing stage, (3) is a base, and (9) is a spring. Note that the same reference numerals in each figure indicate the same or equivalent parts.

Claims (1)

[Claims] A high frequency band wafer prober characterized in that a plurality of springs are provided between a base and a probing stage, and the probing stage is supported by the springs to provide elasticity.