JPH05240877A - Prober for measuring semiconductor integrated circuit - Google Patents
Prober for measuring semiconductor integrated circuitInfo
- Publication number
- JPH05240877A JPH05240877A JP4264792A JP4264792A JPH05240877A JP H05240877 A JPH05240877 A JP H05240877A JP 4264792 A JP4264792 A JP 4264792A JP 4264792 A JP4264792 A JP 4264792A JP H05240877 A JPH05240877 A JP H05240877A
- Authority
- JP
- Japan
- Prior art keywords
- prober
- probe
- tip
- integrated circuit
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000000523 sample Substances 0.000 claims abstract description 32
- 238000005259 measurement Methods 0.000 claims description 2
- 238000005452 bending Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 1
Landscapes
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体集積回路測定用
プローバに関し、特にチップ状の半導体集積回路装置に
おける入出力端子である電極パッドと接触する探針を有
する半導体集積回路測定用プローバに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a prober for measuring a semiconductor integrated circuit, and more particularly to a prober for measuring a semiconductor integrated circuit having a probe which comes into contact with an electrode pad which is an input / output terminal in a chip-like semiconductor integrated circuit device.
【0002】[0002]
【従来の技術】図4は従来の半導体集積回路測定用プロ
ーバの一例における探針を示す図である。従来、この種
の半導体集積回路測定用プローバ(以下、単にプローバ
と呼ぶ)は、プロービング装置のプローブヘッドに取付
けられるプローバ本体と、このプローバ本体に複数本が
衝立てられる探針とで構成されていた。2. Description of the Related Art FIG. 4 is a view showing a probe in an example of a conventional semiconductor integrated circuit measuring prober. Conventionally, a prober for measuring a semiconductor integrated circuit of this type (hereinafter, simply referred to as a prober) is composed of a prober main body attached to a probe head of a probing device and a probe with which a plurality of probes are struck by the prober main body. It was
【0003】このプローバを使用して半導体集積回路を
測定し試験する場合は、まず、図4に示すように、プロ
ーバを下降させ、半導体チップ1のパッシベーション膜
2より露出する電極パッドに探針4の鋭い先端を接触さ
せ、探針4を介して半導体チップ1に形成された集積回
路に信号を援受し、プローブハッドに連結されるテスタ
本体に信号を送り、集積回路の良否を判定していた。When a semiconductor integrated circuit is measured and tested by using this prober, first, as shown in FIG. 4, the prober is lowered and the probe 4 is placed on the electrode pad exposed from the passivation film 2 of the semiconductor chip 1. Of the integrated circuit formed on the semiconductor chip 1 through the probe 4 to support the signal, and send the signal to the main body of the tester connected to the probe hud to determine the quality of the integrated circuit. It was
【0004】[0004]
【発明が解決しようとする課題】しかしながらこの従来
のプローバでは、半導体チップ上の電極パッドに針状の
探針を押しあてて電気的接続を行っているので、探針の
押圧力によりしばしば電極パッドや電極パッド下の拡散
層を傷つけたり、また探針の押圧位置を誤ると、半導体
チップのパッシベーション膜や配線に損傷を与えるとい
う問題がある。However, in this conventional prober, since the needle-shaped probe is pressed against the electrode pad on the semiconductor chip for electrical connection, the electrode pad is often pressed by the pressing force of the probe. If the diffusion layer under the electrode pad or the electrode pad is damaged, or if the pressing position of the probe is incorrect, there is a problem that the passivation film of the semiconductor chip and the wiring are damaged.
【0005】本発明の目的は半導体チップに損傷を与え
ることなく確実に電極パッドと電気的接触を得て測定出
来るプローバを提供することである。An object of the present invention is to provide a prober capable of surely making electrical contact with an electrode pad for measurement without damaging the semiconductor chip.
【0006】[0006]
【課題を解決するための手段】本発明の第1のプローバ
は、半導体集積回路の入出力端子である半導体チップの
電極パッドに接触する複数の探針を備える半導体集積回
路測定用プローバにおいて、前記探針の前記電極パッド
と接触する部分が球面に形成され、かつ前記探針の一部
が前記電極パッドに接触圧を与える弾性体で形成されて
いることを特徴としている。A first prober of the present invention is a prober for measuring a semiconductor integrated circuit, comprising a plurality of probes that come into contact with electrode pads of a semiconductor chip, which are input / output terminals of the semiconductor integrated circuit. It is characterized in that a portion of the probe contacting the electrode pad is formed into a spherical surface, and a part of the probe is formed of an elastic body that applies a contact pressure to the electrode pad.
【0007】本発明の第2のプローバは、前記探針の先
端部に複数本の導電性弾性線が埋設されていることを特
徴としている。The second prober of the present invention is characterized in that a plurality of conductive elastic wires are embedded in the tip portion of the probe.
【0008】[0008]
【実施例】次に本発明について図面を参照して説明す
る。図1は本発明のプローバの第1の実施例における探
針を示す図である。このプローバにおける探針4は、図
1に示すように、剛性のある棒体の先端にアール状に曲
げられた板ばね5を取付けたことである。それ以外は従
来例と同じである。この板ばね5を棒体の先端に取付け
ることにより、電極パッド3に接触する接触圧は板ばね
5のばね定数を適切に設定することにより確実に電気的
接触が得られる。また、板ばね5をアール状に曲げるこ
とにより、その押圧部は鈍くなり、半導体チップ1を損
傷させることはない。The present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a probe in a first embodiment of a prober of the present invention. As shown in FIG. 1, the probe 4 of this prober has a leaf spring 5 bent in a round shape attached to the tip of a rigid rod. Otherwise, it is the same as the conventional example. By attaching the leaf spring 5 to the tip of the rod body, the contact pressure for contacting the electrode pad 3 can be surely obtained by properly setting the spring constant of the leaf spring 5. Further, by bending the leaf spring 5 into a round shape, the pressing portion becomes dull and the semiconductor chip 1 is not damaged.
【0009】図2は本発明のプローバの第2の実施例に
おける探針を示す図である。このプローバは、図2に示
すように、探針4の本体を弾性のある棒状とし、その先
端を球状にしたことである。このように電極パッド3と
の接触圧を棒体の弾性で与え、かつ押圧部を球状にする
ことにより半導体チップ1を損傷させることはない。FIG. 2 is a diagram showing a probe in a second embodiment of the prober of the present invention. In this prober, as shown in FIG. 2, the main body of the probe 4 has an elastic rod shape, and its tip has a spherical shape. In this way, the contact pressure with the electrode pad 3 is given by the elasticity of the rod body, and the pressing portion is made spherical, so that the semiconductor chip 1 is not damaged.
【0010】図3は本発明のプローバの第3の実施例に
おける探針を示す図である。このプローバは、図3に示
すように、剛性のある探針4の先端に導電性のある弾性
線を埋め込みブラシ6に形成したことである。このプロ
ーバも、半導体チップ1に集中応力を与えることなく確
実に接触が得られる。FIG. 3 is a diagram showing a probe in a third embodiment of the prober of the present invention. In this prober, as shown in FIG. 3, a conductive elastic wire is formed on the embedded brush 6 at the tip of the rigid probe 4. This prober can also surely obtain contact without giving concentrated stress to the semiconductor chip 1.
【0011】[0011]
【発明の効果】以上説明したように本発明は、電極パッ
ドと接触する部分を応力が集中しないように球状あるい
はアール状もしくは多点接触とし、接触圧を一定とする
ように本体部分あるいはその一部を弾性体にすることに
より、半導体チップに損傷を与えることなく確実に電気
的接触が得られる。As described above, according to the present invention, the portion in contact with the electrode pad is formed into a spherical shape, a round shape or a multi-point contact so that stress is not concentrated, and the main body portion or one of the main body portion is provided so that the contact pressure is constant. By making the portion an elastic body, electrical contact can be surely obtained without damaging the semiconductor chip.
【図1】本発明のプローバの第1の実施例における探針
を示す図である。FIG. 1 is a diagram showing a probe in a first embodiment of a prober of the present invention.
【図2】本発明のプローバの第2の実施例における探針
を示す図である。FIG. 2 is a diagram showing a probe in a second embodiment of the prober of the present invention.
【図3】本発明のプローバの第3の実施例における探針
を示す図である。FIG. 3 is a diagram showing a probe in a third embodiment of the prober of the present invention.
【図4】従来のプローバの一例における探針を示す図で
ある。FIG. 4 is a diagram showing a probe in an example of a conventional prober.
1 半導体チップ 2 パッシベーション 3 電極パッド 4 探針 5 板ばね 6 ブラシ 1 semiconductor chip 2 passivation 3 electrode pad 4 probe 5 leaf spring 6 brush
Claims (2)
体チップの電極パッドに接触する複数の探針を備える半
導体集積回路測定用プローバにおいて、前記探針の前記
電極パッドと接触する部分が球面に形成され、かつ前記
探針の一部が前記電極パッドに接触圧を与える弾性体で
形成されていることを特徴とする半導体集積回路測定用
プローバ。1. A prober for measuring a semiconductor integrated circuit, comprising a plurality of probes that come into contact with electrode pads of a semiconductor chip, which is an input / output terminal of a semiconductor integrated circuit, wherein a portion of the probe that comes into contact with the electrode pads is spherical. A prober for semiconductor integrated circuit measurement, wherein the probe is formed and a part of the probe is formed of an elastic body that applies a contact pressure to the electrode pad.
線が埋設されていることを特徴とする請求項1記載の半
導体集積回路測定用プローバ。2. The prober for measuring a semiconductor integrated circuit according to claim 1, wherein a plurality of conductive elastic wires are embedded in the tip portion of the probe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4264792A JPH05240877A (en) | 1992-02-28 | 1992-02-28 | Prober for measuring semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4264792A JPH05240877A (en) | 1992-02-28 | 1992-02-28 | Prober for measuring semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05240877A true JPH05240877A (en) | 1993-09-21 |
Family
ID=12641807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4264792A Withdrawn JPH05240877A (en) | 1992-02-28 | 1992-02-28 | Prober for measuring semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05240877A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08148931A (en) * | 1994-11-24 | 1996-06-07 | Tech Res & Dev Inst Of Japan Def Agency | Phased array antenna |
| KR100368075B1 (en) * | 2000-02-07 | 2003-01-15 | 마이크로 인스펙션 주식회사 | Inspection apparatus and method adapted to a scanning technique employing a rolling wire probe |
| US7274195B2 (en) | 1998-08-31 | 2007-09-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device test probe |
| JP2014182041A (en) * | 2013-03-21 | 2014-09-29 | Totoku Electric Co Ltd | Probe pin and contact probe |
| CN116718631A (en) * | 2023-06-09 | 2023-09-08 | 武汉理工大学 | Device and method for in-situ variable temperature testing of the electrical jamming effect of ferroelectric materials |
-
1992
- 1992-02-28 JP JP4264792A patent/JPH05240877A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08148931A (en) * | 1994-11-24 | 1996-06-07 | Tech Res & Dev Inst Of Japan Def Agency | Phased array antenna |
| US7274195B2 (en) | 1998-08-31 | 2007-09-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device test probe |
| KR100368075B1 (en) * | 2000-02-07 | 2003-01-15 | 마이크로 인스펙션 주식회사 | Inspection apparatus and method adapted to a scanning technique employing a rolling wire probe |
| JP2014182041A (en) * | 2013-03-21 | 2014-09-29 | Totoku Electric Co Ltd | Probe pin and contact probe |
| CN116718631A (en) * | 2023-06-09 | 2023-09-08 | 武汉理工大学 | Device and method for in-situ variable temperature testing of the electrical jamming effect of ferroelectric materials |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6476626B2 (en) | Probe contact system having planarity adjustment mechanism | |
| JPH11101820A (en) | Probe card and wafer test method using the same | |
| JP2003084047A (en) | Jig for measuring semiconductor devices | |
| KR102528722B1 (en) | Electrical connecting device and inspection method | |
| JPH1151970A (en) | Probe card | |
| JP2559242B2 (en) | Probe card | |
| JPS6080772A (en) | Probe needle | |
| JPH0750321A (en) | Probe card | |
| JPH0523537U (en) | Probe card | |
| JP2635054B2 (en) | Probing card | |
| JP2007064841A (en) | Calibration board for electronic component tester | |
| JPS6236137Y2 (en) | ||
| JPH0833414B2 (en) | Probing card | |
| JP2533430Y2 (en) | Probe card for IC wafer test | |
| JPH08220139A (en) | Inspection board probe | |
| JPH04115545A (en) | Probe card | |
| JP2002176077A (en) | Semiconductor measuring equipment | |
| JPH06216215A (en) | Contact structure in probe card | |
| JPH06295942A (en) | Substrate inspecting instrument | |
| JPH1116962A (en) | Prober device | |
| JP2556129B2 (en) | Flexible probe card | |
| JPH09115970A (en) | Probe card | |
| JPH0926437A (en) | Probe card and inspection device using the same | |
| JP2011220859A (en) | Method for testing semiconductor devices | |
| JP2002176080A (en) | Probe for semiconductor device and probe card |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990518 |