490566 經濟部智慧財產局員工消費合作社印¾ A7 --- --B7 —_ _ 五、發明說明（1 ) 技術領域_ 本發明與製造接觸結構有關，用以建立與接觸目標間 的電氣接觸’如接觸墊或電子電路或裝置的引線，更明確 地說’與製造用於探針卡之接觸結構的方法有關，以增進 的頻覓、接腳間距、接觸性能與可靠度測試半導體晶圓、 半導體晶片 '已封裝之半導體裝置、模組插座或印刷電路 板等類似物。 發明背景 在測試高密度及高速的電氣裝置，如L S I及 V L S I電路時’必須使用高性能的接觸結構，如探針接 觸器或測試接觸器。本發明的接觸結構並不限用於半導體 晶圓及晶片的測試與燒機，也包括已封裝的半導體裝置、 印刷電路板等的測試與燒機。本發明的接觸結構也可用於 更一般的用途，包括〗C引線、I c封裝及其它的電子連 接。不過’爲便於解釋，對本發明的描述主要是與參考半 導體晶圓的測試。 在被測試之半導體裝置是半導體晶圓的情況，半導體 測試系統’如I C測試器，通常是連接到基底操縱裝置， 如自動晶圓探針，以自動測試半導體晶圓。其例顯示於圖 1 ’圖中的半導體測試系統具有一測試頭1 〇 〇 ，通常它 是在一分離的外殼中，經由一束電纜電氣連接到測試系統 。測試頭1 0 〇與基底操縱裝置4 〇 〇藉例如由馬達 ο 1 0驅動的操縱器5 0 〇機械地與電氣地相互連接。 (請先閱讀背面之注意事項再填寫本頁) · I ,------訂--------- 本纸張尺度適用中國國家標準（CNS)A4規格 (2]0 X 297 公兌） -4- 經濟部智慧財產局員工消費合作社印製 490566 A7 ——~E____ 五、發明說明（2 ) 基底操縱裝置4 0 0將待測試的半導體晶圓自動送到 測試頭1 〇 〇的測試位置。被測半導體晶圓上之I C電路 所得到的輸出信號（響應）傳送給半導體測試系統，輸出 的信號在測試系統中與預期的資料比較，以決定半導體晶 B ±之I C電路的功能是否正確。 在圖2中，更詳細顯示當測試一半導體晶圓時，基底 ί喿縱裝置（晶圓探針）4 〇 〇、測試頭1 〇 〇及介面總成 1 4 〇的結構。測試頭1 〇 〇與基底操縱裝置4 〇 〇以介 ®總、成1 4 0連接，介面總成1 4 0包括性能測試板、彈 性接腳塊、探針卡、及其它組件。圖2中的性能測試板 1 2 〇是一印刷電路板，其上具有電路，與測試頭的電氣 足印、同軸電纜、彈簧接腳及連接器一對一連接。測試頭 1 0 0中包括大量的印刷電路板1 5 0 ，每一個印刷電路 板1 5 0具有一連接器1 6 0，用以容納性能測試板 1 2 〇上對應的接觸端1 2 1。一 6蛙形ό環（彈性接腳塊 )1 3 0，安裝在性能測試板1 2 0上，以正確地決定相 對於基底操縱裝置4 0 0的接觸位置。蛙形環1 3 0上具 有大量的接觸接腳1 4 1 ，諸如Ζ I F連接器或彈簧接腳 ’經由同軸電纜1 2 4連接到性能測試板1 2 0上的接觸 觸 1 2 1。 如2所示，測試頭1 〇 〇置於基底操縱裝置4 〇 〇上 ，經由介面總成1 4 0機械地與電氣地連接到基底操縱裝 置。在基底操縱裝置4 0 0中，被測半導體晶圓3 〇 0固 定在夾具1 8 0上。在本例中，在被測半導體晶圓3〇〇 Ϊ纸張尺度適用中國國家標準（C1\TS)A4規格（2]0 X 297公玆)' ^ (請先閱讀背面之注意事項再填寫本頁) 裝---- 訂---------· 490566490566 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ¾ A7 --- --B7 —_ _ V. Description of the Invention (1) Technical Field _ The invention relates to the manufacture of contact structures for establishing electrical contact with contact targets' Such as contact pads or leads of electronic circuits or devices, more specifically, 'is related to a method of manufacturing a contact structure for a probe card to test semiconductor wafers with improved frequency finding, pin pitch, contact performance and reliability, "Semiconductor wafer" a packaged semiconductor device, module socket, or printed circuit board and the like. BACKGROUND OF THE INVENTION When testing high-density and high-speed electrical devices, such as L S I and V L S I circuits, a high-performance contact structure, such as a probe contactor or a test contactor, must be used. The contact structure of the present invention is not limited to testing and burning of semiconductor wafers and wafers, but also includes testing and burning of packaged semiconductor devices, printed circuit boards, and the like. The contact structure of the present invention can also be used for more general purposes, including C leads, I c packages, and other electronic connections. However, for the sake of explanation, the description of the present invention is mainly made with the test of a reference semiconductor wafer. In the case where the semiconductor device to be tested is a semiconductor wafer, a semiconductor test system such as an IC tester is usually connected to a substrate manipulation device such as an automatic wafer prober to automatically test the semiconductor wafer. An example shown in FIG. 1 ′ is a semiconductor test system having a test head 100, which is usually electrically connected to the test system in a separate housing via a bundle of cables. The test head 100 and the substrate manipulating device 400 are mechanically and electrically connected to each other by a manipulator 500 that is driven by, for example, a motor 10. (Please read the precautions on the back before filling this page) · I, ------ Order --------- This paper size is applicable to China National Standard (CNS) A4 specifications (2) 0 X 297 credit) -4- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 490566 A7 —— ~ E ____ V. Description of the invention (2) The substrate manipulation device 4 0 0 The semiconductor wafer to be tested is automatically sent to the test head 1 〇 〇 Test position. The output signal (response) obtained by the IC circuit on the semiconductor wafer under test is transmitted to the semiconductor test system, and the output signal is compared with the expected data in the test system to determine whether the IC circuit function of the semiconductor crystal B ± is correct. In FIG. 2, when a semiconductor wafer is tested, the structure of the substrate vertical device (wafer probe) 400, the test head 100, and the interface assembly 140 are shown in more detail. The test head 100 is connected to the substrate manipulating device 400, and the interface assembly 140 is connected to the interface assembly 140. The interface assembly 140 includes a performance test board, an elastic pin block, a probe card, and other components. The performance test board 12 in FIG. 2 is a printed circuit board with a circuit thereon, which is connected to the electrical footprint of the test head, coaxial cable, spring pins, and connectors on a one-to-one basis. The test head 100 includes a large number of printed circuit boards 150. Each of the printed circuit boards 150 has a connector 160 for receiving a corresponding contact end 121 on the performance test board 120. A 6 frog ring (elastic pin block) 1 3 0 is installed on the performance test board 1 2 0 to correctly determine the contact position with respect to the base manipulation device 4 0 0. The frog ring 1 3 0 has a large number of contact pins 1 4 1, such as a ZIF connector or a spring pin ′ connected to the performance test board 1 2 0 via a coaxial cable 1 2 4 by a contact 1 2 1. As shown in Fig. 2, the test head 1000 is placed on the substrate manipulation device 400, and is mechanically and electrically connected to the substrate manipulation device via the interface assembly 140. In the substrate manipulator 400, the semiconductor wafer 300 to be tested is fixed on the jig 180. In this example, the Chinese National Standard (C1 \ TS) A4 specification (2) 0 X 297 mm is applied to the 300 尺度 paper size of the semiconductor wafer under test. '^ (Please read the precautions on the back before filling (This page) Install ---- Order --------- · 490566
五、發明說明（3 ) (請先閱讀背面之注意事項再填寫本頁) 的上刀配置一探針卡1 7 0 。探針卡1 7 0上具有大量的 探針接觸件或接觸結構（如針或懸臂）1 9 0 ,用以接觸 被測半導體晶圓3 0 0上之I C電路中的電路端點或接觸 目標。 探針卡1 7 0的電氣端點或接觸插座電氣連接到配置 於蛙形環1 3 0上的接觸接腳1 4 1 。接觸接腳1 4 1也 以同軸電纜1 2 4連接到測試板1 2 0的接觸端點1 2 1 ’每一個接觸端點1 2 1連接到測試頭丨〇 〇的印刷電路 板1 5 0。此外，印刷電路板1 5 0經由內有數百條電線 的電纜束1 1 0連接到半導體測試系統。 在此種配置之下，探針接觸件1 9 0接觸位於夾具 1 8 0上之半導體晶圓3 0 0的表面，並將信號施加於半 導體晶圓3 0 0 ，並從晶圓3 0 〇接收I c晶片產生的信 號。來自被測半導體晶圓3 0 0的輸出信號與半導體測試 系統所產生的預期資料比較，以決定半導體晶圓3 〇 Q上 的I C晶片是否能正確地執行。V. Description of the invention (3) (Please read the precautions on the back before filling in this page) The upper knife is equipped with a probe card 170. There are a large number of probe contacts or contact structures (such as pins or cantilevers) on the probe card 170, which are used to contact the circuit end points or contact targets in the IC circuit on the semiconductor wafer 300 under test. . The electrical terminal or contact socket of the probe card 170 is electrically connected to a contact pin 1 4 1 arranged on the frog ring 130. The contact pins 1 4 1 are also connected to the test terminal 1 2 0 by a coaxial cable 1 2 4. Each of the contact terminals 1 2 1 is connected to the test circuit board 1 5 0 . In addition, the printed circuit board 150 is connected to a semiconductor test system via a cable bundle 110 having hundreds of wires therein. In this configuration, the probe contact 190 contacts the surface of the semiconductor wafer 300 located on the jig 180, and applies a signal to the semiconductor wafer 300, and from the wafer 300. Receive signals from IC chips. The output signal from the semiconductor wafer 300 under test is compared with the expected data generated by the semiconductor test system to determine whether the IC chip on the semiconductor wafer 300Q can perform correctly.
經濟部智慧財產局員工消費合作社印-M 探觸定到 傳進 ， 接固觸、的它 中針將接線上， 例探 ο 端接 ο 7 本條 00 尖與 7 9 在數1的| 1 1 。 複具 OW 卡極 圖有夾 9 的針電 視定的 190探個 底固中臂 1 於數 。 的上2懸臂形^觸 〇其圖，懸成?ί接 7 ，當動巧到接1ί 1環。移堤接連4 卡脂臂上):fi連線 1 針樹懸向或步輸腳 探氧或ο墊一傳接 之環針 ο 接進。簧 2 一爲 3 的它 } 彈 圖是稱圓上，示的 是 ο ，晶 ο 接顯 2 3 7 ο 體 ο 連未圖 圖 1 9 導 3 4 彳與 卡 1 半圓 9 線步 針件的晶 1 輸 一 & 本紙張尺度適闬中國國家標準（CNS)A4規格（2]〇χ 297公楚） 經濟部知曰慧財產局員工消費合作社印製 490566 B7 ___ 五、發明說明（4 ) 典型上，探針卡1 7 0是聚醯亞胺的多層結構·，具有 接地平面、電源平面、以及在多層上的信號傳輸線。如熟 知的技術，所設計的每一條信號傳輸線都設計有特性阻抗 ，例如5 0歐姆，用以平衡分布參數，即聚醯亞胺的介電 常數與導磁率，探針卡1 7 0內之信號路徑的電容與電感 。因此，信號線是阻抗匹配線，以獲得與晶圓3 0 〇間高 頻的傳輸頻寬，藉以供應穩態時的電流，以及在過渡狀態 中裝置輸出交換時所產生的高峰値電流。爲消除雜訊，在 探針卡的電源與接地面間配置電容器1 9 3及1 9 5。 圖4顯示探針卡1 7 0的等效電路，用以解釋習知技 術之探針卡在頻寬上的限制。如圖4 A及4 B所不，探針 卡1 7 0上的信號傳輸線從電極1 9 7延伸，包括條片（ 阻抗匹配）線1 9 6、接線1 9 4及針（懸臂）1 9 0。 由於接線1 9 4與針1 9 0的阻抗並不匹配，在高頻帶時 ’此部分如同一電感器L，如圖4 C所示。由於接線 1 9 4與針1 9 0的全長大約2 0 - 3 0毫米，致使在測 試被測裝置的高頻性能時，受到電感器很大的限制。 限制探針卡1 7 0之頻寬的其它因素存在於電源及接 地針’如圖4 D及4 E所示。如果電源線能提供夠大的電 '侃給被測裝置，則不致於嚴重限制測試時的工作頻寬。不 過·由於供應電源的接線1 9 4與針1 9 〇是串連（圖4 D ) ’以及提供電源與信號接地的接線1 9 4與針1 9〇 也是串連（圖4 E )，它們相當於電感器，致使高速電流 嚴重受限。 國家標準規格巧]。x 297 公"ϋ~~— ^ " (請先閱讀背面之注意事項再填寫本頁) 裝--------訂-------- 490566 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（5 ) 此外’電容器1 9 3及1 9 5是配置在電源線與接地 線之間’藉濾除電源線上的雜訊及突波脈衝以確保被測裝 置的性能正常。電容器1 9 3的値較大，諸如1 〇 ( F ， 如有需要，可以經由一開關切斷與電源線的連接。電容器 1 9 5的値較小，諸如〇 · 〇 1 ( f，它是固定連接於 D U T (被測裝置）附近。這些電容器的功用如同將電源 線上的高頻去耦。換言之，電容器限制接觸探針接觸件的 闻頻性能。 因此，上述使用最廣泛之探針接觸件的頻寬限制大約 是2 Ο Ο Μ Η Z ，這對測試目前的半導體裝置而言實屬不 夠。工業界所考慮的頻寬至少要等於I c測試器的能力， 就目前而言是在1 GH ζ或更高，這在不久的將來就會成 爲必要。此外，業界希望一個探針卡可以處理大量的半導 體裝置，特別是記憶體，例如3 2個或更多，以平行測試 的方式增加測試的產量。 在習用的技術中，如圖3所示的探針卡及探針接觸件 是由人工製造，因此品質不一致。此等品質的不一致包括 尺寸、頻寬、接觸力及電阻等的變動。在習用的探針接觸 件中，還有一項因素造成接觸性能不可靠，即在溫度改變 時，探針接觸件與被測半導體晶圓間的熱膨脹比不同。因 此，當溫度改變時，其間的接觸位置會改變，對接觸力、 接觸電阻及頻寬有不利影響。 (請先閱讀背面之注意事項再填寫本頁) -裝 訂-------- 本纸張尺度適用中國國家標準（CNS)A4規格（2】0 X 29/公.¾ ) " 8 - ^566 ^566 經濟部智慧財產局員工消f合作社印製 A7 —-____ B7____ 五、發明說明（6 ) 因此，本發明的目的是提供一種接觸結構，用以與接 觸目標電氣接觸，建立它們之間的電氣通信，以獲得高頻 寬、高接腳數及高接觸性能。 本發明的另一目的是提供一種接觸結構，它適合同時 平行測試大量的半導體裝置。 本發明還有另一目的是提供一種接觸結構，它具有使 用自動接線帶（TAB: tape automated bonding )技術製造的 大量接觸件，因此，接觸件具有微條片線（ microstrip line )的結構，具有預先決定的特徵阻抗。 本發明還有另一目的是提供一種接觸結構，它具有複 數個接觸件，在每一個接觸件之傳導引線的一端配置一接 點球，當接觸結構壓向接觸目標時，能獲得理想的擦拭效 果。 本發明還有另一目的是提供一種接觸結構，複數個具 有梭點球的接觸件插入基底的貫穿孔中，並以黏著劑將其 附接於該處。 在本發明中’用以與接觸目標建立電氣接觸的接觸結 構具有自動接線帶（T A B )的形狀，以接點球做爲接點 。接觸結構包括由導電引線經由介電層置於接地面上所構 成的複數個接觸件，每一條導電引線具有一平面的形狀以 構成一微條片線，與介電層及接地面共同建立一預先決定 的特徵阻抗’並在它的尖端配置一接點球，例如由硬質導 電材料製成的球形接點’以及一支撐基底，用以將複數個 ^纸張尺度適用中國國家標準（CNS)A4規格（2]〇χ 297公t ) --—-— --------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員Η消費合作社印製 490566 A7 -——_ B7 五、發明說明（7 ) 接觸件固定於其上，使連通路徑從導電引線的尖端延伸到 接觸結構外部的組件，其中，接觸件被彎曲，朝向固定接 觸目標之被測試基底的表面傾斜，因此，當接觸結構壓向 被測試基底時，接觸件的彎曲部產生一接觸力，按此方式 ’導電引線尖端上的接點球產生一擦拭效果。 在本發明的另一態樣中，還在上述接觸結構的接地面 外圍配置一接觸件支架，當壓向被測基底時，用以限制接 觸件的變形。在本發明的另一態樣中，接觸結構是由具有 複數個接觸件附接貫穿孔的接觸基底以及複數個接觸件所 構成。複數個接觸件插入接觸基底的貫穿孔內，並以黏著 劑將其附接於該處。 在本發明的又一態樣中，接觸結構是由複數個第一層 接觸件與複數個第二層接觸件經由一絕緣層相互並置所構 成’其中，在第一及第二層之複數個接觸件中的每一個接 觸件都是由導電引線經由介電層置於接地面上所構成，每 一條導電引線具有一平面的形狀以構成一微條片線，與介 電層及接地面共同建立一預先決定的特徵阻抗，並在它的 尖端配置一接點球，例如由硬質導電材料製成的球形接點 ，以及一支撐基底，用以將複數個接觸件固定於其上，使 連通路徑從導電引線的尖端延伸到接觸結構外部的組件， 其中，接觸件被彎曲，朝向固定接觸目標之被測試基底的 表面傾斜，因此，當接觸結構壓向被測試基底時，接觸件 的彎曲部產生一接觸力，按此方式，導電引線尖端上的接 點球產生一擦拭效杲。 本紙張尺度適用中國國家標準（CNS)A4規格（2]0 X 297公.f ) (請先閱讀背面之注意事項再填寫本頁)The Consumers ’Cooperative Mark-M of the Intellectual Property Bureau of the Ministry of Economic Affairs is set to pass in, and its middle pin will be connected to the fixed contact. For example, ο terminating ο 7 this article 00 point and 7 9 in the number 1 | 1 1 . The OW card pole diagram has a pin-clip set of 9 and a set of 190 probes for the bottom solid middle arm. The upper 2 cantilever shape ^ touch 〇 its picture, suspended into? Ί then 7, when you move to 1 1 ring. Move the bank one after another on the grease arm): fi connection 1 Needle tree can be hung to or step into the foot to probe oxygen or ο pad a pass ring pin ο Connect. Spring 2 is 3 of it} The elastic diagram is on the circle, showing ο, crystal ο display 2 3 7 ο body ο not even shown in Figure 1 9 guide 3 4 彳 and card 1 semicircle 9 thread step needle Crystal 1 Loss 1 & This paper is suitable for Chinese National Standard (CNS) A4 specifications (2) 0 × 297 gongchu) Printed by the Ministry of Economic Affairs and the Intellectual Property Bureau Employee Consumer Cooperative 490566 B7 ___ 5. Description of the invention (4) Typically, the probe card 170 has a multilayer structure of polyimide, and has a ground plane, a power plane, and a signal transmission line on multiple layers. As well-known technology, each signal transmission line designed is designed with a characteristic impedance, such as 50 ohms, to balance the distribution parameters, that is, the dielectric constant and magnetic permeability of polyimide. Capacitance and inductance of the signal path. Therefore, the signal line is an impedance matching line to obtain a high-frequency transmission bandwidth of 300 to the wafer, so as to supply the current in the steady state and the peak chirp current generated when the device output is switched in the transient state. To eliminate noise, capacitors 193 and 195 are placed between the power supply and the ground plane of the probe card. Fig. 4 shows the equivalent circuit of the probe card 170, which is used to explain the bandwidth limitation of the conventional probe card. As shown in Figures 4 A and 4 B, the signal transmission line on the probe card 170 extends from the electrode 197, including strip (impedance matching) wire 1 9 6, wiring 1 9 4 and pin (cantilever) 1 9 0. Since the impedance of the wiring 194 and the pin 190 does not match, at high frequency, this part is like the same inductor L, as shown in Figure 4C. Because the total length of the wiring 194 and the pin 190 is approximately 20-30 mm, the high-frequency performance of the device under test is greatly limited by the inductor. Other factors that limit the bandwidth of the probe card 170 are the power supply and ground pin 'as shown in Figures 4D and 4E. If the power cord can provide enough electricity to the device under test, it will not severely limit the operating bandwidth during testing. However, since the wiring for supply power 194 is connected in series with pin 19 (Figure 4D) and the wiring for providing power and signal ground is also connected in series (Figure 4E), they are Equivalent to an inductor, causing high-speed current to be severely limited. National standard specifications]. x 297 public " ϋ ~~ — ^ " (Please read the notes on the back before filling this page) -------- Order -------- 490566 Staff of Intellectual Property Bureau, Ministry of Economic Affairs Printed by Consumer Cooperative A7 B7 V. Invention Description (5) In addition, 'Capacitors 1 9 3 and 1 9 5 are placed between the power line and the ground line'. Filter out noise and surge pulses on the power line to ensure the measured The performance of the device is normal. Capacitor 193 has a larger 値, such as 1 〇 (F, if necessary, can be disconnected from the power line via a switch. Capacitor 119 has a small ，, such as 〇 · 〇1 (f, which is Fixedly connected near the DUT (device under test). These capacitors function like decoupling high frequencies on the power line. In other words, capacitors limit the frequency performance of contact probe contacts. Therefore, the most widely used probe contacts described above The bandwidth limit is about 2 0 0 Μ Η Z, which is not enough for testing current semiconductor devices. The bandwidth considered by the industry must be at least equal to the capacity of the I c tester, which is currently at 1 GH ζ or higher, which will become necessary in the near future. In addition, the industry hopes that a probe card can handle a large number of semiconductor devices, especially memory, such as 32 or more, and increase in parallel testing Tested output. In conventional technology, the probe cards and probe contacts shown in Figure 3 are manufactured by hand, so the quality is inconsistent. These inconsistencies in quality include size, bandwidth, contact force, and Changes in resistance, etc. In conventional probe contacts, there is another factor that causes unreliable contact performance, that is, when the temperature changes, the thermal expansion ratio between the probe contact and the semiconductor wafer under test is different. Therefore, when the temperature When changing, the contact position will change, which will adversely affect the contact force, contact resistance and bandwidth. (Please read the precautions on the back before filling this page)-Binding -------- This paper size Applicable to China National Standard (CNS) A4 specification (2) 0 X 29 / Male. ¾) " 8-^ 566 ^ 566 Printed by the staff of the Intellectual Property Bureau of the Ministry of Economy A7 —-____ B7____ V. Description of the invention (6 Therefore, the object of the present invention is to provide a contact structure for making electrical contact with a contact target and establishing electrical communication between them to obtain high frequency bandwidth, high pin count, and high contact performance. Another object of the present invention is to provide A contact structure is suitable for testing a large number of semiconductor devices in parallel at the same time. Another object of the present invention is to provide a contact structure which is manufactured using TAB (tape automated bonding) technology. Therefore, the contact has a microstrip line structure and has a predetermined characteristic impedance. Another object of the present invention is to provide a contact structure having a plurality of contacts. A contact ball is arranged at one end of the conductive lead of a contact, and when the contact structure is pressed against the contact target, an ideal wiping effect can be obtained. The present invention also has another object to provide a contact structure with a plurality of shuttle balls. The contact is inserted into the through hole of the substrate, and is attached thereto with an adhesive. In the present invention, the contact structure used to establish electrical contact with the contact target has the shape of an automatic connection tape (TAB) to contact The ball serves as a contact. The contact structure includes a plurality of contacts composed of conductive leads placed on a ground plane through a dielectric layer. Each conductive lead has a planar shape to form a micro-strip line, and together with the dielectric layer and the ground plane, a A predetermined characteristic impedance 'and a contact ball arranged at its tip, such as a spherical contact made of a hard conductive material' and a supporting base for applying a plurality of ^ paper dimensions to the Chinese National Standard (CNS) A4 specification (2) 〇χ 297 公 t) ------ --------- order --------- line (please first Read the notes on the back and fill in this page) Printed by the member of the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 490566 A7 -----_ B7 V. Description of the invention (7) The contact is fixed on it so that the communication path extends from the tip of the conductive lead The component to the outside of the contact structure, where the contact is bent and inclined toward the surface of the substrate to be tested which is fixed to the contact target. Therefore, when the contact structure is pressed against the substrate to be tested, a bending force is generated in the contact. Method 'The contact ball on the tip of the conductive lead produces a wipe effect. In another aspect of the present invention, a contact holder is arranged on the periphery of the ground plane of the contact structure, which is used to limit the deformation of the contact when pressed against the substrate to be tested. In another aspect of the present invention, the contact structure is composed of a contact base having a plurality of contact element attachment through holes and a plurality of contact elements. A plurality of contact pieces are inserted into the through holes of the contact base, and are attached thereto with an adhesive. In yet another aspect of the present invention, the contact structure is constituted by a plurality of first-layer contacts and a plurality of second-layer contacts juxtaposed with each other via an insulating layer. 'Among them, the plurality of first and second layers Each of the contacts is composed of conductive leads placed on a ground plane through a dielectric layer. Each conductive lead has a flat shape to form a micro-strip line, which is common with the dielectric layer and the ground plane. A predetermined characteristic impedance is established, and a contact ball is arranged at its tip, such as a spherical contact made of a hard conductive material, and a supporting base for fixing a plurality of contacts thereon for communication The path extends from the tip of the conductive lead to the component outside the contact structure, where the contact is bent and inclined toward the surface of the substrate under test that is fixed to the contact target. Therefore, when the contact structure is pressed against the substrate under test, the bent portion of the contact A contact force is generated, and in this way, the contact ball on the tip of the conductive lead produces a wiping effect. This paper size applies to China National Standard (CNS) A4 specifications (2) 0 X 297 male.f) (Please read the precautions on the back before filling this page)
490566 A7 ----- -B7 五、發明說明（8 ) 按照本發明，接觸結構具有極高的頻寬，可符合下一 代半導體技術的測試要求。由於接觸結構是由使用自動接 線帶（T A B )技術所成形的接觸件架構而成，因此，在 很小的間距內可排列大量的接觸件，且成本低。導電引線 尖端的接點球是由硬質材料製成，當接觸結構壓向接觸目 標時’可獲得理想的擦拭效果。此外，由於本發明的接觸 結構具有微條片線的結構，阻抗匹配可以一直建立到接觸 件的尖端’因此，在極高的頻率範圍可以獲得絕佳的接觸 性能。 圖式簡單說明 圖1顯示基底操縱裝置與具有測試頭之半導體測試系 統間結構性關係的槪圖。 圖2顯示半導體測試系統之測試頭經由一介面組件與 基底操作裝置間連接的詳細結構。 圖3顯不探針卡實例的底視圖，環氧樹脂的環上裝置 了複數條懸臂做爲探針接觸件。 -------------------訂·--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 圖 路 電 效 等 的 卡 針 探構 之結 3 觸 圖接 是之 E 明 4 發 I 本 A 是 4 δ 圖圖 圖 視 勺 白 的 己 酉 匹 抗 阻 有 具 接 形 -〆、 有 端 尖 的 它 在 件 觸 接 線 引 \)/ Β A T /IV 帶 線 接 動。 自點 視 正 面 剖 的 上 底 基 在 形 成 構 結 觸 接 之 明 發 本 示 顯 6 圖 圖 圖 視 底 的 構 結 觸 接 之 明 發 本 示 所 6 圖 是 7 圖 本纸張尺度適用中國國家標準（CNS)A4規格（2]0 X 297公.g ) -11 - 490566 A7 ___B7_____五、發明說明（9 ) 圖8是成形在基底上之本發明接觸結構另一例的剖面 正視圖。 圖9是本發明之接觸結構的底視圖，具有排列在四個 方向的接觸件。 圖1 0是本發明之接觸結構又一例的剖面正視圖，具 有兩層阻抗匹配之T A B引線成形的接觸件。 圖1 1是本發明之接觸結構又一例的剖面正視圖，具 有複數個T A B引線成形的接觸件，裝配在接觸基底之接 觸件附著貫穿孔中。 圖1 2是圖1 1之接觸結構的頂視圖。 i g元件對照表 2 〇 3〇 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 3 7 3 8 3 9 4 2 4 4 5〇 6 0 接觸基底 接角固件 接點球 導電引線 介電層 接地面 接墊 絕緣層 螺絲 接觸件支架 黏著劑 接觸基底 適用中國國家標準（CNS)A4規格（210 X 297公釐） 12 · 1 1 1 - I I -II ϋ —i 一口、ft 111 I -· m I— ·1 - I » 490566 A7 B7490566 A7 ----- -B7 V. Description of the invention (8) According to the present invention, the contact structure has extremely high bandwidth, which can meet the test requirements of the next-generation semiconductor technology. Since the contact structure is formed by a contact structure formed using a technology of automatic wiring tape (TAB), a large number of contacts can be arranged in a small pitch, and the cost is low. The contact ball at the tip of the conductive lead is made of a hard material. When the contact structure is pressed against the contact target ', an ideal wiping effect can be obtained. In addition, since the contact structure of the present invention has a structure of a micro-strip line, impedance matching can be established all the way to the tip of the contact member. Therefore, excellent contact performance can be obtained in an extremely high frequency range. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram showing a structural relationship between a substrate manipulation device and a semiconductor test system having a test head. Figure 2 shows the detailed structure of the connection between the test head of the semiconductor test system and the substrate handling device via an interface module. Figure 3 shows a bottom view of an example of a probe card. A plurality of cantilevers are mounted on the ring of the epoxy resin as probe contacts. ------------------- Order · --------- (Please read the precautions on the back before filling out this page) Staff Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Cooperative printed roads, electrical effects, and other card-piercing structures. 3 Touching the picture, E, 4, I, A, and 4 δ. Figures and diagrams. It has a tip, and it is connected in a piece of wire. \ Β AT / IV The upper base of the front view cut off from the point of view is showing the Mingfa display of the structure contact. Figure 6 The figure of the bottom of the structure showing the contact of the Mingfa display 6 The picture is 7 The paper size is suitable for China Standard (CNS) A4 specification (2) 0 X 297 g.g) -11-490566 A7 ___B7_____ V. Description of the invention (9) Figure 8 is a sectional front view of another example of the contact structure of the present invention formed on a substrate. Fig. 9 is a bottom view of a contact structure of the present invention, with contacts arranged in four directions. FIG. 10 is a cross-sectional front view of another example of a contact structure of the present invention, with two layers of impedance-matched T A B lead formed contacts. Fig. 11 is a cross-sectional front view of another example of a contact structure of the present invention, having a plurality of T A B lead-shaped contact members assembled in a contact member attachment through-hole of a contact substrate. FIG. 12 is a top view of the contact structure of FIG. 11. ig component comparison table 2 〇3〇 (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 3 7 3 8 3 9 4 2 4 4 5060 Contact ball conductive lead dielectric layer ground plane pad insulation layer screw contact bracket adhesive contact substrate applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 12 · 1 1 1-II -II ϋ —i 口, Ft 111 I-· m I— · 1-I »490566 A7 B7
五、發明說明（1Q 2 0 2 1 2 4 3 0 4〇 4 1 5〇 6〇 7 0 8〇 9〇 4 7 經濟部智慧財產局員工消費合作社印^ 3〇 3 2 4〇 5 0 電纜束 測試板 接觸辆 同軸電纜 蛙形環 介面總成 接觸接腳 印刷電路板 連接器 探針卡 夾具 接觸結構 電容器 接線 電容器 條片線 電極 被測半導體晶圓 接觸墊 基底操作裝置 操縱器 驅動馬達 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -13- 490566 A7 B7 五、發明說明（11 ) 發明詳細說明 本發明之接觸結構的第一例顯示於圖5及6 ，其中包 括接觸件3 0 ，就整體來看是一板狀的形狀，它、是由導電 引線3 5、介電層3 6、接地面3 7及固定於導電引線 3 5上的接點球3 1所構成。在圖6中，接觸件3 0固定 在接觸基底2 0上。此種板狀的接觸件3 0以使用電子元 件工業所使用的自動接線帶（T A B )技術成形爲佳。典 型上，當要求封裝很薄時，使用T A B做爲半導體晶片的 接線。在本發明中，使用此種T A B技術來建立接觸結構 的阻抗匹配，以獲得高頻寬。 當在本發明中使用T A B技術時，一組具有固定於介 電基底上再固定於接地面上之複數條導電引線的接觸件以 配置在載帶（earner tape )上爲佳。載帶上可以配置大量 的這類接觸件組，並纏繞在捲軸上。從捲軸上取下載帶， 將載帶上的接觸件置於接觸基底2 0上，並經由黏著處理 將其附接於基底2 0上。 圖5中也顯示接觸目標，如要被半導體測試系統測試 之半導體晶圓3 0 0上的接觸墊3 2 0。當接觸結構壓向 半導體晶圓3 0 0日寸’導電引線3 5尖端的接點球3 1 is 半導體晶圓3 0 0上之接觸墊3 2 0間將建立電氣連通。 由於接點球3 1是以硬的導電金屬製成（將在後文中詳述 )，因此，當接觸件3 0壓向接觸目標3 2 0時會產生擦 拭的效杲。擦拭效果是指擦拭接觸目標3 2 0的氧化物表 面，因此，導電物質可與接觸結搆的接點球3丨直接接觸 本纸張尺度適用巾S S家標準（CNS)A4規格（21Q X 297公分)-14 - ' "*---- -----------裝— (請先閱讀背面之注意事項再填寫本頁) T —------線1 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 490566 A7 B7___一 五、發明說明（12 ) 〇 圖6顯示本發明的接觸結構位於被測試之晶圓3 0 〇 上的剖面圖。圖6的接觸結構是由接觸件3 0與接觸基底 2 0架構而成，接觸基底2 0上具有電路圖案（未顯示） 。如前所述，成形接觸件3 0的方法與廣泛用於半導體裝 置封裝技術中的T A B引線相同。此種T A B引線包括複 數條導電引線，成形在一連續帶上，並纏繞在捲軸上。來 自捲軸的T A B引線置於半導體晶片上，並例如經由熱接 合將其附接於晶片上。本發明的接觸件3 0也可以使用相 同的方法固定到接觸基底2 0上。 如圖5及6所示，每一個接觸件3 0具有導電引線 3 5 ，經由介電層3 6配置在接地面3 7上。因此，每一 條導電引線3 5是一微條片線的結構，這是微波技術中的 習知技術。在微條片線中，決定特徵阻抗的因子包括導電 引線3 5的寬度，介電層3 6的厚度，介電層3 6的介電 常數及導磁率。接觸件3 0向固定接觸目標3 2 0之半導 體晶圓3 0 0的表面彎曲傾斜，因此，當接觸結構壓向該 晶圓3 0 0時，接觸件的彎曲部位會產生接觸力。 例如，介電層3 6的材料包括礬土、氧化鈹、藍寶石 、玻璃纖維、玻璃環氧樹脂、塡充陶瓷的鐵弗龍或類似物 。因此，接觸件3 0的特徵阻抗與信號線的阻抗（未顯示 )很容易匹配，例如在接觸基底2 0上5 0歐姆。因此， 本發明的接觸結構可以在高頻操作，因爲阻抗的匹配一直 建立到接觸件3 0的尖端。 本紙張尺度刺巾關家鮮（CNS)A4規格（2Κ)χ 297公g ) -1b - — (請先閱讀背面之注意事項再填寫本頁) —mr 裝-------.—訂--------- 經濟部智慧財產局員工消費合作社印製 490566 A7 B7_ 五、發明說明（13 ) 典型上，接點球3 1是圓球形，不過，其它形狀也都. 適用’如梯形、近似方形、角錐形或圓錐形。典型上，接 點球3 1是硬質的接點球，直徑4 0微米，例如是由玻璃 鍍鎢或硬金屬製成。接福件3 0要硬到當壓向表面上具有 金屬氧化物的接觸目標3 2 0時，足以產生擦拭的效果。 例如，如果晶圓3 0 0上之接觸目標3 2 0的表面有鋁的 氧化物，擦拭效果可以有效地破壞鋁的氧化物表面，並與 錫之氧化物表面下方的導電材料建立低接觸電阻的電氣接 觸。由於接觸件3 0具有傾斜角度，當接觸結構從圖6的 垂直方向壓向晶圓3 0 0時，接點球3 1會在水平方向移 動，藉以更提高擦拭效果。 導電引線3 5及接地片3 7的材料包括鎳、鋁、銅、 鎳鈀、鍺、鎳金、銥。如前所述，介電層3 6的材料包括 礬土、氧化鈹、藍寶石、玻璃纖維、玻璃環氧樹脂、塡充 陶瓷的鐵弗龍或類似物。也如前所述，接點球3 1的材料 例如是玻璃鍍鎢或其它硬金屬。在另一例中，接點球3 1 是圓球形、方形、角錐形或圓錐形，由硬金屬製成，如鎳 、鈹、銘、銅、鎳-銘一鐵合金、或鐵一鎳合金。 此外’接點球3 1也可以使用鎳、鋁、銅或其它合金 做爲底金屬’外部鍍以局導電性、不氧化的金屬，如金、 銀、鎳鈀、铑、鎳金、銥等。在圖5及6的例中，圓球形 的接點球3 1附接於導電引線3 5的尖端，附接的方法包 括錫焊、銅焊、鎔焊、各種接合技術，包括熱音波接合、 熱壓接合、超音波接合技術等，或施加導電黏著劑。接點 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公g ) -16- (請先閱讀背面之注意事項再填寫本頁) 裝 訂---------. 經濟部智慧財產局員工消費合作社印製 490566 A7 ------- B7 ---- 五、發明說明（14 ) 球3 1的形狀可以是半球形，因此，非球形部分可附接於 導電引線3 5的一端。. 圖7是本發明之接觸結構的底視圖。除了具有接點球 3 1的尖端之外，每一條導電引線3 5都是固定在介電層 3 6及接地面3 7上。因此，接觸結構的阻抗一直到導電 引線3 5的尖5而都與測g式系統中其它傳輸線的阻抗匹配。 雖然在圖7之例中接觸件3 0的長度都相同，不過，按照 本發明，接觸件3 0的長度（即導電引線3 5的長度）也 可不同。 圖8是本發明之接觸結構的另一例。在本例中，除了 圖6中的例子外，接觸結構還包括一對接觸件支架4 4 ， 位在接地面3 7的外圍表面。接觸件支架4 4例如以一螺 絲4 2固定在接觸基底2 0上。當圖8的接觸結構壓向半 導體晶圓3 0 0時，接觸件支架4 4與接地面3 7的上表 面接觸，以限制接觸件3 0進一步變形。因此，當接觸件 3〇太過彎曲時，接觸件支架4 4可保護接觸件3 0 ，此 外，當接觸結構壓向半導體晶圓3 0 〇時’也可提供接觸 結構額外的簧力。 圖9是本發明另一例的底視圖。在本例中’接觸結構 具有四個方向的接觸引線3 5 ，因此’接觸點是配置成正 方形。除了具有接點球3 1的尖端之外’每一條導電引線 3 5是固定在介電層3 6及接地面3 7上。因此’接觸結 構的阻抗一直到導電引線3 5的尖端都與測§式系統中其它 傳輸線的阻抗匹配。如圖9中的虛線所示’在導電引線 I n *ϋ m 09 n n lav I— n n Kuvi:Nt 0 n I f mMBt n ki> t— Ϊ ^ · 1· n ί I n« n I I i= 口 Γ靖先閱碲背面之注意事項再填寫本頁} 本紐、張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -17 - 490566 經濟部智慧財產局員工消費合作社印製 A7 -----B7____ 五、發明說明（15 ) 3 5另一端’其間的間距被放大（扇出），以便與基底 2 0上之電路圖案（未顯示）的間距匹配。 圖1 0顯示本發明之接觸結構另一例的剖面圖。在本 例中’接觸結構包括兩層接觸件。外層的接觸件是由接地 面3 7 :、介電層3 6 !以及導電引線3 5 i所構成，構成 類似微條片的結構。每一條導電引線3 5 :的尖端配置一接 $占球3 1 1。內層的接觸件是由接地面3 7 2、介電層3 6 2以及導電引線3 5 2所構成，構成類似微條片的結構。每 一條導電引線3 5 2的尖端配置一接點球3 1 2。在外接觸 件與內接觸件間配置一絕緣層3 9 ，用以使接觸件間相互 電氣絕緣。在此配置中，可以得到間距小且具高頻性能的 接觸件。 每一個接點球3 1 :、3 1 2 (統稱爲接點球3 1 )是 硬質的接點球（或如前所述的其它形狀），直徑4 0微米 ’例如是由玻璃鍍鎢或硬金屬製成。接觸件3 0要硬到當 壓向表面上具有金屬氧化物的接觸目標3 2 0時，足以產 生擦拭的效果。例如，如果晶圓3 0 0上之接觸目標 3 2 0的表面有鋁的氧化物，擦拭效果可以有效地破壞銘 的氧化物表面，並與鋁之氧化物表面下方的導電材料建立 低接觸電阻的電氣接觸。由於接觸件3 0具有傾斜角度， 當接觸結構從圖6的垂直方向壓向晶圓3 0 0時，接點球 3 1會在水平方向移動，藉以更提高擦拭效果。 導電引線3 5 !、3 5 2及接地片3 7 :、3 7 2的材料 包括鎳、鋁、銅、鎳鈀、铑、鎳金、銥。如前所述，介電 (請先閱讀背面之注意事項再填寫本頁) -τ f^-^yl^Y · n n n νϋ n n· vn 1 馨 MM· 4MM aMMI MM·· MM* ΜΗ·· MM I -* 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） -1F- 490566 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（16 ) 層3 6 i、3 6 2的材料包括礬土、氧化鈹、藍寶石、玻璃 纖維、玻璃環氧樹脂、塡充陶瓷的鐵弗龍或類似物。 接點球3 1例如是玻璃球（或其它形狀）鍍鎢或其它 硬金屬。在另一例中，接點球3 1是球形（或其它形狀， 如方形、梯形、角錐形或圓錐形）的接點，由硬金屬製成 ，如鎳、鈹、鋁、銅、鎳-鈷一鐵合金、或鐵一鎳合金。 此外’接點球3 1也可以使用鎳、鋁、銅或其它合金 做爲底金屬，外部鍍以高導電性、不氧化的金屬，如金、 銀、鎮絶、铑、鎳金、銥等。在圖5及6的例中，圓球形 的接點球3 1附接於導電引線3 5的尖端，附接的方法包 括錫焊、銅焊、錯焊、各種接合技術，包括熱音波接合、 熱壓接合、超音波接合技術等，或施加導電黏著劑。接點 球3 1的形狀也可以是半球形，因此，非球形的部分可附 接於導電引線3 5的尖端。 圖1 1是本發明之接觸結橇另一例的剖面正視圖，具 有複數個T A B引線接觸件，裝配在接觸基底6 〇的接觸 件附接貫穿孔中。_ i 2是圖丨；[_之接觸結襲頂視圖。 在本例中，接觸結構是將接觸件3 〇組合到接觸基底6 〇 的接觸件附接貝芽孔中。接觸基底例如是矽基底、玻璃基 底、或陶瓷基底，以蝕刻法在其上成形接觸件附接孔，例 如使用深溝蝕刻技術。接觸件3 〇裝配到基底6 〇的方法 是將接觸件3 0穿過接觸件附接貫穿孔，並以黏著劑5 〇 固疋。黏著劑例如包括環氧樹脂、聚醯亞胺、熱塑黏著劑 及彈性黏著劑。 (請先閱讀背面之注音心事項再填寫本頁) Γ裝---- 訂i 線讎. 本紙張尺度^""^國國家標準（CNS)A4規格（210 X 297 ^"7 -19 - 490566 A7 B7 五、發明說明（17 ) 如圖1 2的頂視圖所示，在接地面3 7及介電層3 6 下方的導電引線3 5連接到基底6 0上的接墊3 8。如圖 1 2的虛線所示，導電引線3 5另一端之間的間距被放大 (扇出）’以便與基底6 0上之電路圖案或接蟄3 8的間 距匹配。 按照本發明，接觸結構具有極高的頻寬，可符合下一 代半導體技術的測試要求。由於接觸結構是由使用自動接 線帶（T A B )技術所成形之接觸件架構而成，因此，在 很小的間距內可排列大量的接觸件，且成本低。導電引線 尖端的接點球是由硬質材料製成，當接觸結構壓向接觸目 標時’可獲得理想的擦拭效果。此外，由於本發明的接觸 結構具有微條片線的結構，阻抗匹配可以一直建立到接觸 件的尖端，因此，在極高的頻率範圍可以獲得絕佳的接觸 性能。 雖然本文是以較佳實施例說明與描述，但須瞭解，由 於以上的教導及所附申請專利範圍的本文，本發明可做諸 多修改與變化，不會偏離本發明的精神與所欲的範圍。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -20- 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）V. Description of the invention (1Q 2 0 2 1 2 4 3 0 4〇4 1 506.07 0 8〇9〇4 7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ 303 2 45.0 0 Cable harness Test board contact vehicle coaxial cable frog ring interface assembly contact pin printed circuit board connector probe card fixture contact structure capacitor wiring capacitor strip wire electrode tested semiconductor wafer contact pad substrate operating device manipulator drive motor (please first Read the notes on the reverse side and fill out this page) This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) -13- 490566 A7 B7 V. Description of the invention (11) Detailed description of the contact structure of the invention The first example is shown in Figs. 5 and 6, which includes the contact member 3 0, which is a plate-like shape as a whole. It is composed of a conductive lead 3 5, a dielectric layer 3 6, a ground plane 37, and a fixing. The contact ball 31 is formed on the conductive lead 35. In FIG. 6, the contact piece 30 is fixed on the contact base 20. This plate-shaped contact piece 30 uses an automatic device used in the electronic component industry. The TAB technology is better formed. On the type, when the package is required to be very thin, TAB is used as the wiring of the semiconductor wafer. In the present invention, this TAB technology is used to establish the impedance matching of the contact structure to obtain high frequency bandwidth. When TAB technology is used in the present invention A set of contacts having a plurality of conductive leads fixed on a dielectric substrate and then fixed to a ground plane is preferably arranged on an carrier tape. A large number of such contact groups can be arranged on the carrier tape. And wound on a reel. Take the download tape from the reel, place the contacts on the carrier tape on the contact substrate 20, and attach it to the substrate 20 by an adhesive process. The contact target is also shown in Figure 5, To be tested by a semiconductor test system, the contact pads 3 2 0 on the semiconductor wafer 300. When the contact structure is pressed against the semiconductor wafer 300, the inch 'conducting lead 3 5' is a contact ball 3 1 is a semiconductor crystal Electrical contact will be established between the contact pads 3 2 0 on the circle 300. Since the contact ball 31 is made of a hard conductive metal (to be described in detail later), when the contact member 30 is pressed toward the contact Wipe at target 3 2 0擦拭. The wiping effect refers to wiping the oxide surface contacting the target 3 2 0. Therefore, the conductive material can directly contact the contact ball 3 of the contact structure. 丨 This paper is applicable to the SS home standard (CNS) A4 specification (21Q X 297 cm) -14-'" * ---- ----------- install — (Please read the precautions on the back before filling this page) T ------- line 1 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed 490566 A7 B7___15. Invention Description (12) 〇 Figure 6 shows that the contact structure of the present invention is located on the wafer under test 3 0 〇 Sectional view on. The contact structure in FIG. 6 is structured by the contact member 30 and the contact substrate 20. The contact substrate 20 has a circuit pattern (not shown). As described earlier, the method of forming the contact 30 is the same as the T A B lead widely used in semiconductor device packaging technology. This TAB lead includes a plurality of conductive leads, is formed on a continuous tape, and is wound on a reel. The TAB lead from the reel is placed on a semiconductor wafer and is attached to the wafer, for example, by thermal bonding. The contact member 30 of the present invention can also be fixed to the contact substrate 20 using the same method. As shown in FIGS. 5 and 6, each of the contacts 30 has a conductive lead 35, and is disposed on the ground plane 37 through the dielectric layer 36. Therefore, each of the conductive leads 35 is a micro-strip structure, which is a conventional technique in microwave technology. In the microstrip line, the factors that determine the characteristic impedance include the width of the conductive leads 35, the thickness of the dielectric layer 36, the dielectric constant of the dielectric layer 36, and the magnetic permeability. The contact piece 30 is bent and inclined toward the surface of the semiconductor wafer 300 that is fixedly contacting the target 320. Therefore, when the contact structure is pressed against the wafer 300, a contact force is generated at the bent portion of the contact piece. For example, the material of the dielectric layer 36 includes alumina, beryllium oxide, sapphire, glass fiber, glass epoxy resin, Teflon or the like filled with ceramic. Therefore, the characteristic impedance of the contact 30 and the impedance (not shown) of the signal line can be easily matched, for example, 50 ohms on the contact substrate 20. Therefore, the contact structure of the present invention can be operated at a high frequency because the impedance matching is established to the tip of the contact 30. This paper scale stab towel Guan Jiaxian (CNS) A4 size (2K) χ 297 g) -1b-— (Please read the precautions on the back before filling this page) —mr pack -------.— Order --------- Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 490566 A7 B7_ V. Description of the invention (13) Typically, the contact ball 3 1 is spherical, but other shapes are also applicable. 'Such as trapezoidal, approximately square, pyramidal, or conical. Typically, the contact ball 31 is a hard contact ball with a diameter of 40 micrometers, for example, made of glass tungsten plating or hard metal. The receiving piece 30 is hard enough that when it is pressed against the contact target 3 2 0 having a metal oxide on the surface, it is sufficient to produce a wiping effect. For example, if the surface of the wafer 300 that contacts the target 3 2 0 has aluminum oxide, the wiping effect can effectively destroy the aluminum oxide surface and establish a low contact resistance with the conductive material under the surface of the tin oxide Electrical contact. Because the contact member 30 has an inclined angle, when the contact structure is pressed against the wafer 300 from the vertical direction in FIG. 6, the contact ball 31 moves in the horizontal direction, thereby further improving the wiping effect. The materials of the conductive leads 35 and the ground plate 37 include nickel, aluminum, copper, nickel-palladium, germanium, nickel-gold, and iridium. As mentioned above, the material of the dielectric layer 36 includes alumina, beryllium oxide, sapphire, glass fiber, glass epoxy resin, Teflon or the like. As also mentioned above, the contact ball 31 is made of, for example, glass tungsten plating or other hard metals. In another example, the contact ball 3 1 is spherical, square, pyramidal, or conical, and is made of a hard metal, such as nickel, beryllium, metal, copper, nickel-nickel-iron alloy, or iron-nickel alloy. In addition, 'contact ball 3 1 can also use nickel, aluminum, copper or other alloys as the base metal'. Externally plated with locally conductive, non-oxidizing metals, such as gold, silver, nickel-palladium, rhodium, nickel-gold, iridium, etc. . In the examples of Figs. 5 and 6, a spherical contact ball 31 is attached to the tip of the conductive lead 35, and the attachment method includes soldering, brazing, brazing, various bonding techniques, including thermosonic bonding, Thermocompression bonding, ultrasonic bonding technology, etc., or applying conductive adhesive. The paper size of the contact is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297g) -16- (Please read the precautions on the back before filling this page) Binding ---------. Ministry of Economic Affairs Printed by the Intellectual Property Bureau employee consumer cooperative 490566 A7 ------- B7 ---- V. Description of the invention (14) The shape of the ball 31 can be hemispherical, so non-spherical parts can be attached to conductive leads 3 5 at one end. FIG. 7 is a bottom view of the contact structure of the present invention. Except for the tip of the contact ball 31, each conductive lead 35 is fixed on the dielectric layer 36 and the ground plane 37. Therefore, the impedance of the contact structure up to the tip 5 of the conductive lead 35 is matched with the impedance of the other transmission lines in the g-type system. Although the lengths of the contacts 30 are all the same in the example of Fig. 7, according to the present invention, the lengths of the contacts 30 (i.e., the length of the conductive leads 35) may be different. FIG. 8 is another example of the contact structure of the present invention. In this example, in addition to the example in FIG. 6, the contact structure also includes a pair of contact holders 4 4 located on the peripheral surface of the ground plane 37. The contact holder 4 4 is fixed to the contact base 20 by a screw 4 2, for example. When the contact structure of FIG. 8 is pressed against the semiconductor wafer 300, the contact holder 44 is in contact with the upper surface of the ground plane 37 to restrict further deformation of the contact 300. Therefore, when the contact piece 30 is too bent, the contact piece holder 44 can protect the contact piece 30. In addition, when the contact structure is pressed against the semiconductor wafer 300, it can also provide additional spring force of the contact structure. Fig. 9 is a bottom view of another example of the present invention. In this example, the 'contact structure has contact leads 3 5 in four directions, so the' contact points are arranged in a square shape. Each of the conductive leads 35 is fixed on the dielectric layer 36 and the ground plane 37, except for having a tip of the contact ball 31. Therefore, the impedance of the 'contact structure up to the tip of the conductive lead 35 is matched with the impedance of other transmission lines in the test system. As shown by the dashed line in Figure 9, 'on the conductive lead I n * ϋ m 09 nn lav I— nn Kuvi: Nt 0 n I f mMBt n ki > t— Ϊ ^ · 1 · n ί I n «n II i = Mouth Jing first read the precautions on the back of tellurium before filling out this page} This button and the scale are applicable to China National Standard (CNS) A4 (210 X 297 mm) -17-490566 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ----- B7____ V. Description of the invention (15) 3 5 The distance between the other end 'is enlarged (fan-out) to match the distance of the circuit pattern (not shown) on the substrate 20. FIG. 10 is a cross-sectional view showing another example of the contact structure of the present invention. The 'contact structure in this example includes two layers of contacts. The outer contact is composed of a ground plane 37, a dielectric layer 36, and a conductive lead 35i, forming a structure similar to a microstrip. Each of the conductive leads 3 5: a tip is configured to connect to the ball 3 1 1. The inner-layer contact is composed of a ground plane 3 7 2, a dielectric layer 3 6 2, and a conductive lead 3 5 2, forming a structure similar to a micro-strip. A contact ball 3 1 2 is arranged at the tip of each conductive lead 3 5 2. An insulating layer 3 9 is arranged between the outer contacts and the inner contacts, so as to electrically insulate the contacts from each other. In this configuration, it is possible to obtain contacts with a small pitch and high frequency performance. Each contact ball 3 1:, 3 1 2 (collectively referred to as contact ball 3 1) is a rigid contact ball (or other shape as described above) with a diameter of 40 μm. Made of hard metal. The contact member 30 is hard enough to produce a wiping effect when pressed against a contact target 3 2 0 having a metal oxide on the surface. For example, if the surface of the wafer 300 that contacts the target 3 2 0 has aluminum oxide, the wiping effect can effectively destroy the oxide surface of the Ming and establish a low contact resistance with the conductive material under the aluminum oxide surface Electrical contact. Because the contact member 30 has an inclination angle, when the contact structure is pressed against the wafer 300 from the vertical direction in FIG. 6, the contact ball 31 moves in the horizontal direction, so as to further improve the wiping effect. The materials of the conductive leads 3 5!, 3 5 2 and the ground plates 3 7:, 3 7 2 include nickel, aluminum, copper, nickel palladium, rhodium, nickel gold, and iridium. As mentioned before, the dielectric (please read the notes on the back before filling this page) -τ f ^-^ yl ^ Y · nnn νϋ nn · vn 1 Xin MM · 4MM aMMI MM ·· MM * ΜΗ ·· MM I-* This paper size is in accordance with China National Standard (CNS) A4 (210 x 297 mm) -1F- 490566 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (16) Layer 3 6 i, The materials of 3 2 6 include alumina, beryllium oxide, sapphire, glass fiber, glass epoxy resin, Teflon or the like filled with ceramic. The contact ball 31 is, for example, a glass ball (or other shape) plated with tungsten or other hard metal. In another example, the contact ball 31 is a spherical (or other shape, such as square, trapezoidal, pyramidal, or conical) contact made of a hard metal such as nickel, beryllium, aluminum, copper, nickel-cobalt An iron alloy, or iron-nickel alloy. In addition, the contact ball 31 can also use nickel, aluminum, copper or other alloys as the base metal, and the outside is plated with highly conductive and non-oxidizing metals, such as gold, silver, insulation, rhodium, nickel gold, iridium, etc. . In the example of FIGS. 5 and 6, the spherical contact ball 31 is attached to the tip of the conductive lead 35, and the attachment method includes soldering, brazing, mis-soldering, various bonding technologies, including thermosonic bonding, Thermocompression bonding, ultrasonic bonding technology, etc., or applying conductive adhesive. The shape of the contact ball 31 may also be hemispherical, and therefore, a non-spherical portion may be attached to the tip of the conductive lead 35. FIG. 11 is a sectional front view of another example of a contact knot skid according to the present invention, having a plurality of T A B lead contacts, which are assembled in a contact attachment through hole of a contact substrate 600. _ i 2 is a figure 丨; [_'s top view of contact knot attack. In this example, the contact structure is a combination of the contact piece 30 into the contact attachment bayonet of the contact substrate 60. The contact substrate is, for example, a silicon substrate, a glass substrate, or a ceramic substrate, and a contact attachment hole is formed thereon by an etching method, for example, using a deep trench etching technique. The method of assembling the contact member 30 to the substrate 60 is to pass the contact member 30 through the contact member through-hole and fix it with the adhesive agent 50. Adhesives include, for example, epoxy resins, polyimide, thermoplastic adhesives, and elastic adhesives. (Please read the phonetic notes on the back before filling in this page) Γ Assemble ---- Order i thread. This paper size ^ " " ^ National Standard (CNS) A4 Specification (210 X 297 ^ " 7 -19-490566 A7 B7 V. Description of the invention (17) As shown in the top view of Figure 12, the conductive leads 3 5 below the ground plane 37 and the dielectric layer 3 6 are connected to the pads 3 on the substrate 60 8. As shown by the dotted line in FIG. 12, the distance between the other ends of the conductive leads 35 is enlarged (fan-out) to match the distance of the circuit pattern or connection 38 on the substrate 60. According to the present invention, The contact structure has extremely high bandwidth, which can meet the test requirements of the next-generation semiconductor technology. Since the contact structure is formed by a contact structure formed using TAB technology, it can be used at a small pitch. A large number of contacts are arranged, and the cost is low. The contact ball of the conductive lead tip is made of a hard material, and when the contact structure is pressed toward the contact target, an ideal wiping effect can be obtained. In addition, the contact structure of the present invention has a micro Strip line structure, impedance matching can be established all the way Therefore, the excellent contact performance can be obtained in the extremely high frequency range. Although this article is illustrated and described in the preferred embodiment, it must be understood that due to the above teaching and the appended patent application, this article Many modifications and changes can be made to the invention without departing from the spirit and scope of the invention. (Please read the notes on the back before filling out this page) Standards apply to China National Standard (CNS) A4 (210 X 297 mm)