KR20010076322A - Contact structure having contact bumps - Google Patents

Abstract

PURPOSE: A contact structure is provided to achieve an improved radio frequency bandwidth, increased number of pins and high contact performed, by arranging the contact structure electrically contacting a contact target. CONSTITUTION: A plurality of contactors(30) that are formed by a conductive lead(35) are provided, and each conductive lead composes a micro strip line by combining a ground surface(37) and a dielectric layer(36) while the conductive lead is in a flat shape, thus establishing a specific characteristic impedance. The tip part of the conductive lead is formed by a hard conductive material. Further, a support substrate for forming a communication path from the tip part to an area to the external element of the contact structure. When the contact structure is pressed against a substrate(300) to be tested, a contact spring force is generated by the bent part of the contactor, thus enabling a contact bump at the tip part of the conductive lead to exhibit rubbing and scraping effects.

Description

CONTACT STRUCTURE HAVING CONTACT BUMPS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact structure for making electrical contact of a contact target, such as contact pads, leads or devices of an electronic circuit, in particular a semiconductor wafer having improved frequency bandwidth, pin pitch and contact performance and stability. The invention relates to contact structures used in probe cards for testing semiconductor chips, packaged semiconductor devices, module sockets and printed boards.

In testing high-density and high-speed electrical devices, such as LSI and XLSI circuits, high-performance contact structures such as probe contacts or test contacts should be used. The contact structure of the present invention includes not only the test and burn-in application of semiconductor wafers or dice, but also the test and burn-in of packages, semiconductors and printed boards. The contact structures of the present invention may be used for more general applications, including IC leads, IC packaging, and other electrical connections. However, for the sake of convenience of explanation, the present invention is mainly described in terms of semiconductor wafer testing.

In the case where the semiconductor device to be tested is in the form of a semiconductor wafer, a semiconductor test system, such as an IC tester, usually involves a substrate handler, such as an automatic wafer prober, to automatically test semiconductor wafers. Such an example is shown in Figure 1, where a semiconductor test system has a test head 100, which is usually located in a separate housing and electrically connected to the main frame of the test system and several cables. The test head 100 and the substrate handler 400 are mechanically connected to each other by, for example, a manipulator 500 which is driven by the motor 510.

The semiconductor wafer to be tested is automatically provided to the test position of the test head 100 by the substrate handler 400. The resulting output (response) signal from the IC circuit on the semiconductor wafer under test is sent to the semiconductor test system, where it is compared with the expected data to determine if the IC circuit on the semiconductor wafer is operating correctly.

Fig. 2 shows the structure of the substrate handler (wafer probe) 400, the test head 100, and the interface assembly 140 in more detail when testing a semiconductor wafer. The test head 100 and substrate substrate ( 400 is coupled to an interface assembly 140 consisting of a performance board, a pogo-pin block, a probe card and other components. The performance board 120 of FIG. 2 is a printed circuit board with a special electrical circuit connection to the electrical foot print, coaxial cable, pogo pins and connectors of the test head.

The test head 100 includes a large number of printed circuit boards 150 corresponding to the number of test channels or test pins. Each printed circuit board has a connector 160 for receiving a corresponding contact terminal 121 of the performance board 120. A "frog" ring (pogo-pin block) 130 is mounted to the performance board 120 to accurately determine the contact location for the substrate handler 400. The prog ring 130 has a number of pin contact pins 141, such as IFF connectors or pogo pins, which are connected to the contact terminals 121 on the performance board 120 via a coaxial cable 124.

As shown in FIG. 2, the test head 100 is positioned above the substrate handler 400 and is electrically and mechanically coupled to the substrate handler through the interface assembly 140. In the substrate handler 400, the semiconductor wafer 300 to be tested is mounted on the chuck 180. The probe card 170 is provided on the semiconductor wafer 300 to be tested. The probe card 170 has a number of probe contacts or contact structures (such as cantilevers or needles) for contacting a circuit terminal or contact target in the IC circuit of the semiconductor wafer 300 under test.

An electrical terminal or contact receptacle of the probe card 170 is electrically connected to a contact pin 141 provided on the probe programming 130. The contact pin 141 is also connected to the contact terminal 121 of the performance board 120 through the coaxial cable 124, and each contact terminal 121 is connected to the printed circuit board 150 of the test head 100. . The printed circuit board 150 is also connected to the semiconductor test system through a cable 110 having hundreds of internal cables.

In this arrangement, the probe contact 190 contacts the surface of the semiconductor wafer 300 on the chuck 180 to apply a test signal to the semiconductor wafer 300 and receive the resulting output signal from the wafer 300. The resulting output signal from the semiconductor wafer 300 under test is compared with the expected results produced by the semiconductor test system to determine if the semiconductor wafer 300 is operating properly.

3 is a bottom view of the conventional probe card 170 of FIG. The probe card 170 in this example has an epoxy ring equipped with a plurality of probe contacts 190 called needles or cantilevers. In the semiconductor wafer probe 400 with the semiconductor wafer 300, when the chuck 180 moves upward in FIG. 2, the end of the cantilever 190 contacts the pad or projection on the wafer 300. An end of the cantilever 190 is connected to a wire 194 further connected to a transmission line (not shown) formed on the probe card 170. The transmission line is connected to a plurality of electrodes 197 in contact with the pogo pin 141 of FIG.

Typically, the probe card 170 consists of a multi-layered polyamide substrate comprising a ground plane, a power plane, and signal transmission lines in multiple layers. As is known in the art, each transmission line is characterized by a 50 ohm characteristic by balancing the parameters being distributed: the dielectric constant and magnetic permeability of the polyamide, the inductance and capacitance of the signal path in the probe card. It is designed to have an impedance. Thus, the transmission line is an impedance matched line that establishes a high frequency transmission bandwidth to the wafer 300 to supply the current in steady state as well as the high current peak generated by the device's output switching in the transient state. Capacitors 193 and 195 are provided on the probe card between the power plane and the ground plane to eliminate noise.

An equivalent circuit of the probe card 170 is shown in FIG. 4 to illustrate that the high frequency performance is limited in conventional probe card technology. As shown in FIGS. 4A and 4G, the signal transmission line of the probe card 170 includes an electrode 197, a strip (impedance matched) line 196, a wire 194 and a needle or cantilever (contact structure) 190 ). Since the wire 194 and the needle 194 do not match impedance, this portion functions as an inductor L in the high frequency band, as shown in Fig. 4C. Since the total length of wire 194 and needle 190 is about 20-30 mm, significant limitations will arise from the inductor when testing the high frequency performance of the device under test.

Another factor limiting the frequency bandwidth of the probe card 170 is the power and ground needle as shown in FIGS. 4D and 4E. If the power line can supply enough current to the device under test, it will not seriously limit the operating bandwidth of the device under test. However, not only the wire series 194 and the needle 190 connected to the ground (Fig. 4E) but also the wire 194 and the needle 190 connected to the power supply for grounding power and signal are connected to the inductor. Because they are equivalent, the flow of fast current is severely limited.

Furthermore, capacitors 193 and 195 are provided between the power line and the ground line to ensure proper performance performance of the device under test by removing power line noise or surge pulses. Capacitor 193 has a relatively high value of # 10 mu F and can be disconnected from the power line by a switch if necessary. The capacitor 195 has a relatively small capacitance value of 0.01 µF and is fixedly connected to the WDT. These capacitors perform the function of high frequency absorption on the power line. That is, the capacitor limits the high frequency performance of the probe contact.

Thus, the most widely used probe contacts mentioned above are limited to a frequency band of approximately < RTI ID = 0.0 > 200MHHz < / RTI > which is insufficient for testing current semiconductor devices. The industry believes that a frequency bandwidth comparable to the performance of testers with 1 HHz or higher is needed in the near future. Moreover, the industry requires that probe cards be able to operate 32 or more memories in accordance with the trend of increasing the number of semiconductor devices, especially the test throughput.

In the prior art, the probe card and the probe probe as shown in Fig. 3 are manufactured manually, resulting in inconsistent quality. Such inconsistent qualities include fluctuations in size, frequency bandwidth, contact force and resistance. Another factor that makes contact performance unreliable in conventional probe contacts is the temperature change at which the probe contact and the semiconductor wafer under test have different coefficients of thermal expansion. Therefore, the contact position varies depending on the temperature change, thereby affecting the contact force, the contact resistance and the bandwidth.

It is therefore an object of the present invention to provide a contact structure in electrical contact with a contact target to achieve electrical communication therebetween, thereby achieving high frequency bandwidth, high pin count and high contact performance.

It is a further object of the present invention to provide a device test contact structure suitable for testing a large number of semiconductor devices at the same time.

It is yet another object of the present invention to provide a contact structure having a plurality of contacts manufactured using TAB technology and having the shape of a microstrip line with a certain characteristic impedance.

It is a further object of the present invention to provide a contact structure having a plurality of contacts each provided with contact projections at one end of the conductive lead to achieve an ideal rubbing effect effectively when the contact structure is pressed against the contact target.

It is a further object of the present invention to provide a contact structure in which a plurality of contacts with contact projections are inserted into through-holes of the substrate and adhered thereto with an adhesive.

1 is a schematic diagram showing the structural relationship between a substrate handler and a semiconductor test system having a test head;

Fig. 2 is a schematic diagram showing a detailed structure connecting a test head of a semiconductor test system to a substrate handler.

Fig. 3 is a bottom view showing an example of a probe card having an epoxy ring for mounting a plurality of cantilevers as probe contacts;

4A-4E are circuit diagrams showing an equivalent circuit of the probe card of FIG.

Figure 5 is a perspective view of the contact structure of the present invention having an impedance matched tape automated bonding (TAB) lead contact with spherical contact points at its ends.

Fig. 6 is a front sectional view showing the contact structure of the present invention formed on a substrate.

Figure 7 is a bottom view of the contact structure of the present invention shown in Figure 6;

Fig. 8 is a front sectional view showing another embodiment of the contact structure of the present invention formed on a substrate.

9 is a bottom view of the contact structure of the present invention with contacts aligned in four directions.

Figure 10 is a front sectional view of another embodiment of a contact structure of the present invention having two layers of impedance matched TAB lead shaped contacts.

Figure 11 is a front sectional view of another embodiment of a contact structure of the present invention having a plurality of TAB lead shaped contacts fitted with contact attachments through holes in the contact substrate.

12 is a plan view of the contact structure of FIG.

<Explanation of symbols for the main parts of the drawings>

20: contact substrate

30: contactor

31: contact projection

35: conductive lead

36: insulation layer

37: ground plane

100: test head

170: probe card

320: contact target

400: substrate handler

In the present invention, the contact structure, which makes the electrical contact with the contact target, has a contact protrusion as a contact point and has a TAB shape. The contact structures each have a planar shape to form a microstrip line in conjunction with the insulating layer and the ground plane to achieve a predetermined characteristic impedance, and at the ends thereof are provided with contact projections, such as spherical contacts made of a rigid conductive material. A plurality of contacts in which the leads are formed through an insulating layer, and a support substrate for mounting the plurality of contacts thereon and extending the communication path from the ends of the conductive leads to the external components of the contact structure, wherein the contacts provide contact targets. When the contact structure is pressed against the substrate under test so as to be bent obliquely with respect to the surface of the substrate under test, the bent portion of the contact generates a contact force in such a way that the contact projection at the end of the conductive lead produces a rubbing effect. According to another aspect of the present invention, when the above-mentioned contact structure is pressed against the substrate under test, the contact support is additionally provided on the outer circumference of the ground plane to limit the deformation of the contact. According to another aspect of the present invention, the contact structure is formed of a contact substrate having a plurality of contact attachment through holes and a plurality of contacts. A number of contacts are inserted into the through holes of the contact substrate and attached thereto with adhesive.

According to another aspect of the present invention, a contact structure is formed in which a first layer of a plurality of contacts and a second layer of a plurality of contacts are placed next to each other through an insulating layer, and a plurality of contacts in each of the first and second layers. Is formed of a conductive lead overlying the ground plane through an insulating layer, each conductive lead having a planar shape to form a microstrip line in conjunction with the insulating layer and the ground plane to achieve a desired characteristic impedance. A conductive lead provided with a contact projection, such as a spherical contact made of a rigid conductive material, formed with an insulating layer, and the plurality of contacts mounted thereon and communicating from an end of the conductive lead to an external part of the contact structure. And a support substrate for extending the path, wherein the contactor is tilted relative to the surface of the substrate under test with the contact target. When the contact structure is bent to the extreme and pressed against the substrate under test, the bent portion of the contact generates the contact force in such a way that the contact projection at the end of the conductive lead produces a rubbing effect.

According to the present invention, the contact structure has a very high frequency bandwidth that meets the test requirements of next-generation semiconductor technology. Since the contact structure is formed with contacts formed using TAB technology, many contacts are aligned at a low pitch at a low cost. The contact projections at the ends of the conductive leads are made of a rigid material to achieve the ideal rubbing effect when the contact structure is pressed against the contact target. Furthermore, since the contact structure of the present invention has a microstrip line structure, impedance matching can be made to the end of the contactor, thus showing excellent contact performance in a very high frequency range.

A first example of a contact structure in accordance with the present invention is a contact protrusion (mounted to the conductive lead 35, the insulating layer 36, the ground plane 37 and the conductive lead 35, as shown in Figures 5 and 6). And a contactor 30 having a plate shape as a whole. In Fig. 6, the contactor 30 is mounted on the contact substrate 20. Preferably such plate-shaped contacts 30 are formed through the TAB technology used in the electronics industry. Typically, TAB is used to wind semiconductor chips when thinness of the package is required. In the present invention, this TAB technique is used to make an impedance matched contact structure to achieve high frequency bandwidth.

When using the TAB technology in the present invention, a set of contacts with a plurality of conductive leads mounted on an insulating substrate mounted on the ground plane is preferably provided on the tape carrier. The tape carrier is removed from the reel and the contacts on the tape carrier are positioned over the contact substrate 20 and attached to the substrate 20 through an adhesive process.

5 illustrates a contact target, such as a contact pad 320 on a semiconductor wafer 300 to be tested by a semiconductor test system. When the contact structure is compressed against the semiconductor wafer 300, electrical communication will be made between the contact protrusion 31 at the end of the conductive lead 35 and the contact pad 320 over the wafer 300. Since the contact protrusion 31 is made of a rigid conductive material, the contactor 30 exhibits a rubbing effect when pressed against the contact target 320 as described below. The rubbing effect refers to the effect that the oxidized surface of the contact target 320 is rubbed so that the conductive material contacts the contact protrusion 31 of the direct contact structure.

6 shows a cross-sectional view of a contact structure of the present invention positioned over a wafer 300 to be tested. The contact structure of FIG. 6 is formed by a contact substrate 20 having a contactor 30 and a circuit pattern (not shown). As mentioned above, the contactor 30 is formed in a manner similar to the TAB lead widely used in semiconductor device packaging technology. This TAB lead includes a plurality of conductive leads formed on a continuous tape stored in the reel. The TAB lead from the reel is placed on the semiconductor chip and attached to it through thermal bonding. The contactor 30 of the present invention may be mounted in a similar manner to the contact substrate 20.

As shown in FIGS. 5 and 6, each contactor 30 has a conductive lead 35 provided on the ground plane 37 through the insulating layer 36. Thus, each conductive lead 35 is formed of a microstrip line structure known in microwave technology. In the microstrip line, its characteristic impedance is determined by factors such as the width of the conductive lead 35, the thickness of the insulating layer 36, the dielectric constant and permeability of the insulating layer 36. Since the contactor 30 is bent inclined with respect to the surface of the semiconductor wafer 300 on which the contact target 320 is mounted, the bent portion of the contactor generates a contact force when the contact structure is pressed against the wafer 300.

Examples of the material of the insulating layer 36 include alumina, beryllia, sapphire, glass fiber, glass epoxy, Teflon filled with ceramic, and the like. Thus, the characteristic impedance of contactor 30 can easily match the impedance of signal lines (not shown) on the contact substrate 20, such as 50 ohms. As a result, the impedance is matched up to the end of the contactor 30, so that high frequency operation can be made in the contact structure of the present invention.

Typically the contact projection 31 has a spherical shape, although other shapes such as trapezoidal, square, pyramid or conical are possible. Typically the contact projection 31 is a rigid contact ball, for example 40 μm in diameter, and is made of glass coated with tungsten or hard metal. The contact protrusion 31 is hard enough to exert a rubbing effect when pressed against the contact target 320 having the metal oxide layer. For example, if the contact target 320 on the wafer 300 has aluminum oxide on its surface, the rubbing effect is effective to penetrate the aluminum oxide surface and make electrical contact with the conductive material with less contact resistance below the aluminum oxide surface. to be. Because of the inclination angle of the contactor 30, the contact protrusion 31 moves in the horizontal direction when the contact structure is pressed against the wafer 300 in the vertical direction of FIG. 6, so that the rubbing effect is further increased.

Examples of the material of the conductive lead 35 and the ground plane 37 are nickel, aluminum, copper, nickel palladium, rhodium, nickel gold or iridium. As mentioned above, examples of the material of the insulating layer 36 include alumina, beryllia, sapphire, glass fiber, glass epoxy, teflon filled with ceramic, and the like. Also, as mentioned above, examples of the material of the contact protrusion 31 are glass balls coated with tungsten or hard metal. Other examples of the contact projections 31 include balls, squares, pyramids, and cones made of hard materials such as nickel, beryllium, aluminum, copper, nickel-cobalt-iron alloys, and iron-nickel alloys.

Furthermore, the contact protrusion 31 is formed of a base metal such as nickel, aluminum, copper or other alloys mentioned above, and has a strong conductive non-oxide metal such as gold, silver, nickel palladium, rhodium, nickel gold or iridium. It may be plated with. 5 and 6, the spherical contact protrusions 31 are soldering, brazing, welding, thermosonic bonding, thermocompression bonding, and ultrasonic bonding. Or are applied to the ends of the conductive leads 35 by using a variety of adhesive techniques, including by a) or by applying a conductive adhesive. The shape of the contact protrusion 31 may be semi-spherical such that a portion that is not spherical is attached to the end of the conductive lead 35.

7 is a bottom view of the contact structure of the present invention. The conductive lead 35 is mounted on the insulating layer 36 and the ground plane 37 except at the very end having the contact protrusion 31. Thus, the impedance of the contact structure will match the impedance of the other transmission line of the test system up to the end of the conductive lead 35. Although the lengths of the contacts 30 are all the same in the example of FIG. 7, contactors 30 of different lengths, i.e., conductive leads 35, are also possible for the present invention.

8 is a sectional view showing another example of the contact structure of the present invention. In this example, in addition to the example of FIG. 6, the contact structure includes a pair of contact supports 44 on the outer periphery of the ground plane. The contact support 44 is fixed with the contact substrate 20, for example via screws 42. When the contact structure of FIG. 8 is pressed against the semiconductor wafer 300, the contact support 44 contacts the top surface of the ground plane 37 to limit the contact 30 from further deformation. As a result, the contact support 44 protects the contact 30 when the contact 30 is too flexible and provides additional spring force to the contact structure when pressed against the semiconductor wafer.

9 is a schematic view showing a bottom view of another example of the present invention. In this example, the contact structure has contact leads 35 in four directions so that the contact positions are arranged in a square. The conductive lead 35 is mounted on the insulating layer 36 and the ground plane 37 except at the very end with the contact projection 31. Thus, the impedance of the contact structure matches the impedance of the other transmission line of the test system up to the end of the conductive lead 35. As shown by the dotted lines in FIG. 9, the pitch between the conductive leads 35 is fan-out at the end to match the pitch of the circuit pattern (not shown) of the substrate 20.

Figure 10 is a sectional view showing another example of the contact structure of the present invention. In this example, the contact structure includes two layers of contacts. The outer contact is formed of a ground plane (37 _1), an insulating layer (36 ₁₎ and the conductive leads (35 ₁₎ to form a shape, such as a microstrip. At the end of each conductive lead 35 ₁ is provided a contact projection 31 ₁ . The inside of the contact is formed from a ground plane (37 _2), insulating layer (36 ₂₎ and conductive leads (35 ₂₎ for forming a shape such as a microstrip. At the end of each conductive lead 35 ₂ is provided a contact projection 31 ₂ . An insulating layer 39 is provided between the outer and inner contacts to electrically separate each other. With this arrangement small contactors with high frequency performance can be made.

Each of the contact projections 31 _1, 32 ₂ (collectively contact projections 31) is for example a rigid contact ball (or, as mentioned above, made of glass coated with tungsten or hard metal, for example 40 μm in diameter). Different shapes). The contact protrusion 31 is hard enough to exert a rubbing effect when pressed against the contact target 320 having the metal oxide layer. For example, if the contact target 320 on the wafer 300 has aluminum oxide on its surface, the rubbing effect is effective to penetrate the aluminum oxide surface and make electrical contact with the conductive material with less contact resistance below the aluminum oxide surface. to be. Because of the inclination angle of the contactor 30, the contact protrusion 31 moves in the horizontal direction when the contact structure is pressed against the wafer 300 in the vertical direction of FIG. 6, so that the rubbing effect is further increased.

Examples of the material of the conductive leads 35 ₁ , 35 ₂ and the ground planes 37 ₁ , 37 ₂ are nickel, aluminum, copper, nickel palladium, rhodium, nickel gold or iridium. As mentioned above, examples of the material of the insulating layers 36 ₁ and 36 ₂ include alumina, beryllia, sapphire, glass fiber, glass epoxy, Teflon filled with ceramic, and the like. An example of the contact protrusion 31 is a glass ball (or other shape) coated with tungsten or another hard metal. Other examples of the contact projections 31 include ball-shaped (square, trapezoidal, pyramidal, conical and Same contact).

Furthermore, the contact protrusion 31 is formed of a base metal such as nickel, aluminum, copper or other alloys mentioned above, and has a strong conductive non-oxide metal such as gold, silver, nickel palladium, rhodium, nickel gold or iridium. It may be plated with. 5 and 6, the spherical contact projections 31 are conductive by using a variety of adhesion techniques, including soldering, soldering, welding, thermosonic bonding, thermocompression bonding, and supersonic bonding techniques or by applying a conductive adhesive. It is attached to the end of the lid 35. The shape of the contact protrusion 31 may be semi-spherical such that a portion that is not spherical is attached to the end of the conductive lead 35.

11 is a front sectional view showing yet another example of the contact structure of the present invention having a plurality of TAB lead contacts fitted with contact attachments through holes in the contact substrate 60. 12 is a plan view of the contact structure of FIG. In this example, the contact structure is manufactured by assembling the contactor 30 with the contact attachment through the holes of the contact substrate 60. Examples of contact substrates are silicon substrates, glass substrates, or ceramic substrates that are made through an etching process, such as a technique in which contact attach holes are deeply etched and etched. The contactor 30 fits into the substrate 60 in such a way that it is pushed into the contact attachment through hole and fixed therewith with the adhesive 50. Examples of adhesives include epoxy, polyamide, thermoplastic adhesives and elastic adhesives.

As shown in the plan view of FIG. 12, under the ground plane 37 and the insulating layer 36, the conductive leads 35 are connected with the contact pads 38 on the substrate 60. As shown by the dotted lines in FIG. 12, the pitch between the conductive leads 35 is enlarged at the ends to match the pitch of the circuit pattern or contact pad 38 on the substrate 60.

According to the present invention, the contact structure has a very high frequency bandwidth that meets the test requirements of next-generation semiconductor technology. Since the contact structure is installed with contacts formed using TAB technology, many contacts can be aligned with a small pitch at low cost. The contact projections at the ends of the conductive leads are made of a hard material to produce an ideal rub effect when the contact structure is pressed against the contact target. Furthermore, since the contact structure of the present invention has a microstrip line structure, impedance matching can be made to the end of the contactor, thereby achieving excellent contact performance in a very high frequency range.

While only preferred embodiments have been specifically described and described above, it will be appreciated that many modifications and variations of the present invention are possible in the scope of the above description and the appended claims without departing from the spirit and intended scope of the invention. .

Claims (20)

A contact structure for establishing electrical contact with a contact target provided on a substrate under test, Each conductive lead has a planar shape that is combined with the insulating layer and the ground plane to form a microstrip line to achieve a predetermined characteristic impedance, and a conductive lead provided with a contact protrusion made of a strongly conductive material at its end is provided through the ground plane. A plurality of contacts overlying; A support substrate for mounting said plurality of contacts thereon and extending a communication path from an end of said conductive lead to an external component of a contact structure; The contact is bent obliquely with respect to the surface of the substrate under test with the contact target so that when the contact structure is pressed against the substrate under test, the contact portion at the end of the conductive lead causes the rubbing effect to be rubbed. A contact structure, characterized by generating an elastic contact force. The contact structure of claim 1, wherein the plurality of contacts are adhered to a support substrate. 2. The contact structure of claim 1, further comprising a contact support provided on an outer circumference of the ground plane to prevent deformation of the contact when pressed against the substrate under test. The contact structure of claim 1, wherein the conductive lead is made of nickel, aluminum, copper, nickel palladium, rhodium, nickel gold or iridium. The contact structure as claimed in claim 1, wherein the contact protrusion has a spherical, square, trapezoidal, pyramidal or conical shape. The contact structure as claimed in claim 1, wherein the contact protrusion is made of a glass protrusion coated with tungsten or another metal. The contact structure as claimed in claim 1, wherein the contact protrusion is made of a hard metal comprising nickel, beryllium, aluminum, copper, nickel-cobalt-iron alloy or iron-nickel alloy. The method of claim 1, wherein the contact protrusion is formed of a base metal such as nickel, beryllium, aluminum, copper, nickel-cobalt-iron alloy or iron-nickel alloy, and comprises gold, silver, nickel-palladium, rhodium, nickel-gold or A contact structure characterized by being plated with a highly conductive non-oxide metal such as iridium. The contact structure of claim 1, wherein the contact protrusion is attached to the conductive lead by soldering, soldering, welding, or application of a conductive adhesive. A contact structure for establishing electrical contact with a contact target provided on a substrate under test, A first layer of a plurality of contacts and a second layer of the plurality of contacts placed next to each other via an insulating layer; The plurality of contacts of each of the first and second layers are formed of conductive leads that are placed on the ground plane through the insulating layer, and each of the conductive leads is combined with the insulating layer and the ground plane to achieve a predetermined characteristic impedance. A contacting projection having a planar shape forming a strip line and made of a highly conductive material at its end is provided; A support substrate for mounting said plurality of contacts thereon and extending a communication path from an end of said conductive lead to an external component of a contact structure; The contact is bent obliquely with respect to the surface of the substrate under test with the contact target so that when the contact structure is pressed against the substrate under test, the contact portion at the end of the conductive lead causes the rubbing effect to be rubbed. A contact structure, characterized by generating an elastic contact force. The contact structure of claim 10, wherein the conductive lead is made of nickel, aluminum, copper, nickel palladium, rhodium, nickel gold or iridium. The contact structure as claimed in claim 10, wherein the contact protrusion has a spherical, square, trapezoidal, pyramidal or conical shape. The contact structure as claimed in claim 10, wherein the contact protrusion is made of a glass protrusion coated with tungsten or another metal. The contact structure as claimed in claim 10, wherein the contact protrusion is made of a hard metal including nickel, beryllium, aluminum, copper, nickel-cobalt-iron alloy or iron-nickel alloy. The method of claim 10, wherein the contact protrusion is formed of a base metal such as nickel, beryllium, aluminum, copper, nickel-cobalt-iron alloy or iron-nickel alloy, and comprises gold, silver, nickel-palladium, rhodium, nickel-gold or A contact structure characterized by being plated with a highly conductive non-oxide metal such as iridium. The contact structure of claim 10, wherein the contact protrusion is attached to the conductive lead by soldering, soldering, welding, or application of a conductive adhesive. A contact structure for establishing electrical contact with a contact target provided on a substrate under test, Each conductive lead has a planar shape that is combined with the insulating layer and the ground plane to form a microstrip line to achieve a predetermined characteristic impedance, and a conductive lead provided with a contact protrusion made of a strongly conductive material at the end thereof is connected to the ground plane through the insulating layer. A plurality of contacts overlying; Mounting a plurality of contacts thereon and extending the communication path from the ends of the conductive leads to the external parts of the contact structure, the contactors being pushed into the support substrate with a through hole for receiving the contacts therein. A support substrate adapted to adhere said contactor to said support substrate by applying to said contactor and a through hole; The contact is bent obliquely with respect to the surface of the substrate under test with the contact target so that when the contact structure is pressed against the substrate under test, the contact portion at the end of the conductive lead causes the rubbing effect to be rubbed. A contact structure, characterized by generating an elastic contact force. 18. The contact structure of claim 17, wherein the contact protrusion has a spherical, square, trapezoidal, pyramidal or conical shape. 18. The contact structure of claim 17, wherein the contact protrusion is made of glass protrusions coated with tungsten or another metal. 18. The contact structure of claim 17, wherein the contact protrusion is made of a hard metal comprising nickel, beryllium, aluminum, copper, nickel-cobalt-iron alloy or iron-nickel alloy.