CN1397804A - Contact structure having contact block - Google Patents
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- CN1397804A CN1397804A CN01120317A CN01120317A CN1397804A CN 1397804 A CN1397804 A CN 1397804A CN 01120317 A CN01120317 A CN 01120317A CN 01120317 A CN01120317 A CN 01120317A CN 1397804 A CN1397804 A CN 1397804A
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Abstract
A contact structure for creating the electric connection with the object on the substrate to be tested has the TAB form using spherical contactor as contact point. It has more contactors formed by the conductive line on the grounding layer and passing through the dielectric layer, and a substrate for fixing said contactors on it and electrically connecting them to external part. The said conductive line is a microstrip line with a hard boss at its end. When the contact structure is pressed on the substrate to be tested, it is curved to contact with the said boss with a friction effect.
Description
(1) technical field
The present invention relates to set up the contact structures that are electrically connected with the contact target that contacts solder joint or the lead-in wire such as electronic circuit or device, more specifically, the present invention relates to be used for the contact structures of a probe plate, described probe plate is used for coming with improved frequency span, lead spacing and contact performance and reliability semiconductor devices, assembly socket and the printed circuit board (PCB) etc. of testing semiconductor wafer, semi-conductor chip, encapsulation.
(2) background technology
At test high density and high-speed electric device, during as LSI and VLSI circuit, must use high performance contact structures, as probe contactor or test contactor.Contact structures of the present invention not only are applied to the test and the burn-back of semiconductor wafer and small pieces, also comprise the test and the burn-back of the semiconductor devices, printed circuit board (PCB) etc. of encapsulation.Contact structures of the present invention can also be used in more wide field, comprise IC lead-in wire, IC encapsulation and other electrical connection.But for convenience of explanation, the present invention mainly is described with reference to semiconductor wafer testing.
Will tested semiconductor devices be under the situation of semiconductor wafer, a kind of semiconductor test system, such as an IC test machine, usually with a substrate handler, for example a kind of automatic wafer probe, automatic together testing semiconductor wafer.Such case representation is in Fig. 1, and one of them semiconductor test system has a measuring head 100, and this measuring head 100 is usually located at one and independently is electrically connected with the test macro main frame in the box body and by bunch of cables.This measuring head 100 under the help of the keyer 500 that for example drives by motor 510 with substrate handler 400 mechanical connection each other.
By substrate handler 400, will be provided on the test position of measuring head 100 by tested semiconductor wafer automatically.Whether synthetic output (response) signal that the circuit from tested semiconductor wafer IC obtains is transmitted to semiconductor test system, and these signals and expected data compare therein, normal to determine the IC circuit function on the semiconductor wafer.
The measuring head 100 when Fig. 2 illustrates in greater detail substrate handler (wafer prober) 400, testing semiconductor wafer and the structure of interface module 140.Measuring head 100 is connected with interface module 140 with substrate handler 400, and described interface module 140 is made of performance board, conversion (pogo) lead block, probe plate and other parts.The performance board 120 of Fig. 2 is one and only carries out the printed circuit board (PCB) that circuit is connected with electric areal coverage, concentric cable, the conversion lead block of measuring head.
Measuring head 100 comprises and test channel or the corresponding printed circuit board (PCB) 150 of test lead number.Each printed circuit board (PCB) has a connector 160 that is used to hold a corresponding contact terminal 121 of performance board 120.One " frog " ring (conversion lead block) 130 is installed on the performance board 120, so that accurately determine the contact position with respect to substrate handler 400.This frog ring 130 has a large amount of contact lead-wire 141, and for example ZIF connector or conversion go between, and these contact lead-wires are connected on the contact terminal 121 of performance board 120 by concentric cable 124.
As shown in Figure 2, measuring head 100 is placed on the substrate handler 400, and carries out machinery with substrate handler and be electrically connected by interface module 140.In this substrate handler 400, tested semiconductor wafer 300 is installed on the chuck 180.A probe plate 170 is arranged on the tested semiconductor wafer 300.Probe plate 170 has a large amount of probe contactors or contact structures (for example cantilever (cantilever) or pin) 190, so that contact with circuit terminal or contact target in the IC circuit of tested semiconductor wafer 300.
The electric connection terminal of probe plate 170 or contact socket be arranged on the contact lead-wire 141 that the frog encircles on 130 and be electrically connected.This contact lead-wire 141 also is connected in the contact terminal 121 of performance board 120 by concentric cable 124, wherein each contact terminal 121 is connected with the printed circuit board (PCB) 150 of measuring head 100.In addition, printed circuit board (PCB) 150 is connected in this semiconductor test system by the cable 110 with hundreds of root inside cable.
In this design proposal, probe contactor 190 contact is positioned at the surface of the semiconductor wafer 300 on the chuck 180, providing test signal to semiconductor wafer 300, and receives synthesized output signals from this chip 300.Synthesized output signal from tested semiconductor wafer 300 is compared with the expected data that semiconductor test system is produced, to determine whether operate as normal of this semiconductor wafer 300.
Fig. 3 is the backplan of conventional probe plate 170 among Fig. 2.In this example, probe plate 170 has an epoxy resin ring, is fixed with a plurality of probe contactors that are called as pin or cantilever on it.When the chuck that semiconductor wafer 300 is housed 180 in the semiconductor wafer probe 400 among Fig. 2 is mobile up, protruding pad or projection on the contact contact wafer 300 of cantilever 190.The end of cantilever 190 contacts with electric wire 194, electric wire 194 further be formed on probe plate 170 in the transmission line (not shown) be connected.These transmission lines be connected to Fig. 2 in conversion go between on 141 contacted a plurality of electrodes 197.
Probe plate 170 is made of the multilayer polyimide substrate usually, comprising the signal transmssion line of ground plane, bus plane and multilayer.As known in the art, by the balanced distribution parameter, be the specific inductive capacity of polyimide and the inductance and the electric capacity of the signalling channel in poly-magnetic permeability and the probe plate 170, each bars transmission line design one-tenth had one for example be the characteristic impedance of 50ohms.Therefore, signal wire is an impedance matching line of having set up the high-frequency transmission bandwidth for wafer 300, is used to provide electric current and device under the stable state to export the high current peak that switch produces in transient state.In order to remove noise, capacitor 193 and 195 is arranged on the probe plate between bus plane and the ground plane.
A kind of equivalent electrical circuit of probe plate 170 is illustrated among Fig. 4, to explain in the conventional probe plate technology restriction to high frequency performance.Shown in Fig. 4 A and 4B, the signal transmssion line on the probe plate 170 extends along the direction of electrode 197, strip line 196 (matched impedance), electric wire 194 and pin or cantilever (contact structures) 190.Because the impedance of this electric wire 194 and pin 190 is not complementary, so these parts have the function that is equivalent to an inductor L in the high frequency band shown in Fig. 4 C.Because the total length of electric wire 194 and pin is approximately 20-30mm, therefore when the high frequency performance of a measured device of test, inductor will produce bigger restriction.
The other factors that the frequency span of probe plate 170 is construed as limiting is power supply shown in Fig. 4 D and the 4E and grounding pin.If power lead can provide enough big electric current to measured device, so just can strict restriction bandwidth of operation in the process of test component.But owing to being connected in series and being used to make the electric wire 194 and being connected in series on the inductance of pin 190 of power supply and signal (Fig. 4 E) ground connection of electric wire 194 that is used for power supply (Fig. 4 D) and pin 190 is equivalent, so the high speed electric current is mobile seriously limited.
In addition, capacitor 193 and 195 is set between power lead and the ground wire, is used for the normal performance of guaranteeing measured device by the noise or the fluctuation pulse of filter out power line.Capacitor 193 has sizable value, 10 μ F for example, and if necessary can disconnect with power lead by switch and being connected.Capacitor 195 has less relatively capacitance, as 0.01 μ F, and is fixedly connected near on the position of DUT.These capacitors are as the high frequency uncoupling device on the power lead.In other words, these capacitor limits the high frequency performance of probe contactor.
Therefore, the most widely used above-mentioned probe contactor is limited in the frequency span of about 200MHZ, and this frequency span is not enough to test current semiconductor devices.Industrial, think that what can be complementary with the tester capacity is necessary for 1GHz or higher band width in the near future at present.In addition, to require the probe plate to handle in a kind of mode of parallel connection a large amount of industrial, and for example 32 or more a plurality of semiconductor devices, especially storer are to increase the test throughput.
In conventional art, as shown in Figure 3 probe plate and probe contactor are hand-builts, thereby cause product quality inconsistent.This qualitative inconsistent size fluctuation that comprises, band width fluctuation, contact force fluctuation and resistance fluctuation etc.In the conventional probe contactor, making insecure another factor of contact performance is temperature variation, and under different temperature, the probe contactor has different temperature expansion coefficients with tested semiconductor wafer.Therefore, in the process of temperature variation, contact position also can change, and this will produce adverse influence to contact force, contact resistance and bandwidth.
(3) summary of the invention
Therefore, an object of the present invention is to provide a kind of contact structures of electrically contacting with contact target of being used for, be electrically connected, thereby obtain higher frequency span, multitap (lead-in wire) is several and high contact performance so that between contact structures and contact target, set up.
Another object of the present invention provides a kind of contact structures that are used for semiconductor test, and it is suitable for testing simultaneously the semiconductor devices of a large amount of parallel connections.
Another purpose of the present invention provides a kind of contact structures with a large amount of utilizations with the contactor of automatic interconnection technique (TAB) production, makes this contactor have a kind of microstrip line construction, and this structure has a predetermined characteristics impedance.
Another purpose of the present invention provides a kind of contact structures with a plurality of contactors, and wherein each contactor is provided with a contact tab at lead one end, is used for friction (scrubbing) effect that reaches desirable when contact structures are pushed down contact target.
Another purpose of the present invention provides a kind of contact structures, and wherein a plurality of contactors with contact tab are inserted in the through hole of substrate, and utilize adhesive attachment thereon.
In the present invention, a kind of contact structures that are used for electrically contacting with contact target foundation have with TAB (band from the be dynamically connected) form of contact tab as contact point.These contact structures comprise a plurality of by the contactor that places the lead on the ground plane to constitute by dielectric layer, wherein each lead has writing board shape, combine with dielectric layer and ground plane to form one, be used to set up the microstrip line of a predetermined properties impedance, and a contact tab is set at lead one end, spherical contact element that forms by a kind of hard conductive material for example, with one be used to that a plurality of contactors are installed and make communicating route extend to the supporting substrate of contact structures external component from wire termination, wherein when contact structures are pushed down measured base plate, these contactor bendings, with respect to a surface tilt of the measured base plate that is fixed with contact target, thereby the sweep of contactor realizes that with the contact tab that is positioned at lead one end a kind of mode of friction effect produces a contact force.
In another aspect of the present invention, above-mentioned contact structures further are provided with a contact mount in the periphery of ground plane, are used for the distortion of restriction contactor when pushing down measured base plate.In another aspect of the present invention, these contact structures comprise a contact substrate with a plurality of contactor connecting through holes and a plurality of contactors.A plurality of contactors are inserted in the through hole of contact substrate, and utilize tackifier attached to it.
In another aspect of the present invention, these contact structures are by constituting by a mutual juxtaposed ground floor of insulation course and the second layer, the described ground floor and the second layer are made of a plurality of contactors respectively, wherein a plurality of contactors on each layer in the ground floor and the second layer are by place the lead on the ground plane to constitute by dielectric layer, wherein each lead has writing board shape, combine with dielectric layer and ground plane in order to formation, be used to set up the microstrip line of predetermined properties impedance, and be provided with a contact tab of making by hard conductive material at lead one end, and one be used for fixing a plurality of contactors and make communication line extend to the supporting substrate of the external component of contact structures from these ends of lead, wherein when contact structures are pushed down test base, these contactor bendings, with respect to a surface tilt of the measured base plate that is fixed with contact target, make the sweep of contactor realize that with the contact tab that is positioned at wire termination the mode of friction effect produces a contact force.
According to the present invention, these contact structures have very high frequency span, to satisfy the requirement of semiconductor technology of future generation.Owing to these contact structures are with the contactor that forms from (TAB) technology that is dynamically connected to constitute by utilizing, therefore a large amount of contactors are with low cost, little spacing arrangement.These contact tabs that are positioned at wire termination are made by hard material, so that the friction effect that can realize ideal when these contact structures are pushed down contact target.In addition, because contact structures of the present invention have a kind of microstrip line construction, therefore can all set up impedance matching, thereby in very high frequency range, obtain a kind of fabulous contact performance up to the contactor end.
(4) description of drawings
Fig. 1 is the synoptic diagram that expression substrate handler and have structural relation between the semiconductor test system of measuring head.
Fig. 2 is the example schematic that expression is used for the measuring head of this semiconductor test system is connected to the detailed structure of this substrate handler.
Fig. 3 represents the backplan of a probe plate example, and described probe plate has an epoxy resin ring that is used for fixing a plurality of cantilevers as the probe contactor.
Fig. 4 A-4E is the circuit diagram of the equivalent electrical circuit of presentation graphs 3 middle probe plates.
Fig. 5 is the skeleton view of expression contact structures of the present invention, and these contact structures have TAB (band is from being dynamically connected) the lead-in wire contactor of impedance matching, and this lead-in wire contactor one end has spherical point contacts.
Fig. 6 is the expression cross sectional front view that is formed on an example of the contact structures on the substrate of the present invention.
Fig. 7 is the backplan of contact structures of the present invention shown in Figure 6.
Fig. 8 is the cross sectional front view that expression the present invention is formed on another example of the contact structures on the substrate.
Fig. 9 is according to the backplan with the contact structures that are arranged in the contactor on the four direction of the present invention.
Figure 10 is the cross sectional front view with another example of contact structures of the present invention of two-layer impedance matching TAB type contactor.
Figure 11 is the cross sectional front view with the example of contact structures of the present invention that is fixed on a plurality of TAB type contactors in the contact substrate contactor connecting through hole.
Figure 12 is the top view of contact structures among Figure 11.
(5) embodiment
First embodiment of contact structures of the present invention is illustrated among Fig. 5 and Fig. 6, it comprises that a plurality of integral body are tabular contactor 30, described contactor is made of 36, one ground planes 37 of 35, one dielectric layers of a plurality of leads and a plurality of contact tab 31 that is fixed on the lead 35.In Fig. 6, contactor 30 is fixed on the contact substrate 20.This tabular contactor 30 preferably by a kind of in electronic device industry employed band form from (TAB) technology that is dynamically connected.Usually when requiring outer casing thickness thin, band is used for the rolling-in semiconductor wafer from the technology (TAB) that is dynamically connected.In the present invention, this TAB technology is used to set up a kind of contact structures of impedance matching, to realize higher frequency span.
When using this TAB technology in the present invention, have a plurality of winding tentaculums that are fixed on the dielectric substrate and be preferably disposed on the band carrier, wherein dielectric substrate further is fixed on the ground plane.This band carrier can be provided with a large amount of this contactor groups, and is stored on the tep reel.The band carrier comes from tep reel, and the contactor of band on the carrier is positioned on the contact substrate 20, and by technique for sticking attached on the contact substrate 20.
Fig. 5 also shows the contact target on the semiconductor wafer 300 that will be tested by semiconductor test system, for example a contact solder joint 320.When these contact structures are pushed down this semiconductor wafer 300, at the contact tab 31 on lead 35 tops with between the contact solder joint 320 on the semiconductor wafer 300, set up telecommunication.Because contact tab 31 made by hard conductive material, as the back in greater detail, contactor 30 shows a kind of friction effect when pushing down contact target 320.This friction effect is meant that the oxide surface of contact target 320 is rubbed, so that conductive material directly contacts with the contact tab 31 of contact structures.
Fig. 6 shows the cut-open view that is positioned the contact structures of the present invention on the tested semiconductor wafer.The contact structures of Fig. 6 comprise contactor 30 and have the contact substrate 20 of circuit pattern (not shown).As mentioned above, contactor 30 forms in a kind of mode that is similar to widely used TAB lead-in wire in the semiconductor device packaging technique.This TAB lead-in wire comprise a plurality of be formed on continuously with on lead, described continuous band is stored on the tep reel.TAB lead-in wire on this tep reel is positioned on the semi-conductor chip, and passes through for example thermal weld attached on the semi-conductor chip.Contactor 30 of the present invention can be fixed on the contact substrate 20 in a similar fashion.
As illustrated in Figures 5 and 6, each contactor 30 all has by dielectric layer 36 and places lead 35 on the ground plane 37.Therefore, each lead 35 has constituted known microstrip line construction in the microwave technical field.In a microstrip line, its characteristic impedance is by the width such as lead 35, the thickness of dielectric layer 36, and the factor of the specific inductive capacity of dielectric layer 36 and magnetic conductivity and so on is determined.When contact structures were pushed down described semiconductor wafer 300, contactor 30 was crooked, with respect to a surface tilt of the semiconductor wafer that is fixed with contact target 320, made the sweep of contactor produce a contact force.
Dielectric layer 36 materials comprise teflon of for example aluminium oxide, beryllia (BeO), sapphire, glass fibre, glass epoxy resin, filling pottery etc.Therefore, the characteristic impedance of contactor 30 can be easily with contact substrate 20 on the impedance of signal wire (not shown), 50ohms coupling for example.Therefore, owing to can both set up impedance matching up to the end of contactor 30, thus can in contact structures of the present invention, realize high-frequency operation.
Contact tab 31 has spherical form usually, although other shape also is feasible as trapezoidal, squarish, taper or taper shape.Contact tab 31 is the hard contact ball that diameter for example is 40 μ m normally, and is made by the glass that scribbles tungsten or a kind of hard metal.Contact tab 31 needs enough hard so that realize friction effect when pushing down the contact target 320 with metal oxide layer.For example, if contact target 320 surfaces on the wafer 300 scribble aluminium oxide, this friction effect has destroyed alumina surface effectively so, and the foundation of the low contact resistance conductive material below alumina surface electrically contacts.When the vertical direction of Fig. 6 was pushed down wafer 300, because the pitch angle of contactor 30, contact tab 31 moved in the horizontal direction, thereby has further improved friction effect in contact structures.
The material of lead 35 and ground plane 37 comprises for example nickel, aluminium, copper, nickel palladium, rhodium, nickel gold or iridium.As mentioned above, the material of dielectric layer 36 comprises teflon of for example aluminium oxide, beryllia (BeO), sapphire, glass fibre, glass epoxy resin, filling pottery etc.Also as mentioned above, contact tab 31 materials are the glass beads that for example scribble tungsten or other hard metal.Another example of contact tab 31 be one by the hard metal sphere such as nickel, beryllium, aluminium, copper, nickel-cobalt-ferroalloy or Fe-Ni alloy, square, pyramid or conical contactor.
In addition, this contact tab 31 can be made of the base metal such as above-mentioned nickel, aluminium, copper or other alloy, and is coated with the anti-oxidation metal of the high conductivity such as gold, silver, nickel palladium, rhodium, nickel gold or iridium thereon.In the embodiment of Fig. 5 and 6, spherical contact tab 31 by soft soldering, hard solder, melting welding, comprise the various solder technology of heat sound (thermosonic) welding, hot pressing welding and supersonic welding connection technology etc., perhaps be connected in the top of lead 35 by applying a kind of electroconductive binder.The shape of contact tab 31 can be a semisphere, so that its aspheric part is connected in the end of lead 35.
Fig. 7 is the backplan of contact structures of the present invention.Part on the lead 35 except that the end that has contact tab just is fixed on dielectric layer 36 and the ground plane 37.Therefore, the impedance of contact structures and impedance matching up to other transmission line of test macro of lead 35 ends.Although the length of contactor 30 all equates in Fig. 7, according to the present invention, the contactor 30 of different length, promptly lead 35 also is an acceptable.
Fig. 8 is the cut-open view of another example of expression contact structures of the present invention.In this example, except the parts shown in the example of Fig. 6, these contact structures also comprise a pair of contact mount 44 that is positioned at ground plane 37 peripheries.Contact mount 44 is fixed on the contact substrate 20 by for example screw 42.When the contact structures of Fig. 8 were pushed down semiconductor wafer 300, contact mount 44 will contact with the upper surface of ground plane 37, thus the further distortion of restriction contactor 30.Therefore, contact mount 44 is protected contactor 30 when contactor 300 is too pliable and tough, and provides additional elastic force to contact structures when contact structures are pushed down semiconductor wafer 300.
Fig. 9 shows the synoptic diagram of the backplan of another embodiment of the present invention.In this example, contact structures all have contact lead-wire 35 at four direction, make contact point be arranged in one square.Part on the lead 35 except that the end that has contact tab 31 just is fixed on dielectric layer 36 and the ground plane.Therefore, the impedance of contact structures and impedance matching up to the test macro transmission line of lead 35 ends.Shown in the dotted line among Fig. 9, the spacing between the lead 35 becomes big (fan-out) in the end, with and substrate 20 on the circuit pattern (not shown) between apart from coupling.
Figure 10 is the cut-open view of expression another example of contact structures of the present invention.In this example, contact structures comprise two-layer contactor.Outer contactor is by a ground plane 37
1, a dielectric layer 36
1And form the lead 35 of a micro stripline structure
1Constitute.At each lead 35
1An end, be provided with a contact tab 31
1The internal layer contactor is by a ground plane 37
2, a dielectric layer 36
2And form the lead 35 of a micro stripline structure
2Constitute.At each lead 35
2An end, be provided with a contact tab 31
2An insulation course 39 is arranged between outer contactor and the internal layer contactor, so that these contactor electrically insulated from one another.In this structure, can realize having the little spacing contactor of high frequency performance.
Each contact tab 31
1With 31
2(being referred to as contact tab 31) is that diameter for example is 40 μ m, and the hard contact ball of being made by the glass that scribbles tungsten or a kind of hard metal (perhaps above-mentioned other shape).Contact tab 31 needs enough firmly, so that can obtain friction effect on pushing down the contact target 320 with metal oxide layer the time.For example, if contact target 320 surfaces on the wafer 300 scribble aluminium oxide, so effectively friction effect can electrically contact in the low contact resistance conductive material foundation below alumina surface.Because the pitch angle of contactor 30, when pushing down wafer 300 on the vertical direction of contact structures in Fig. 6, contact tab 31 moves in the horizontal direction, thereby has further improved friction effect.
Lead 35
1, 35
2With ground plane 37
1, 37
2Material comprise nickel, aluminium, copper, nickel palladium, rhodium, nickel gold or iridium.As mentioned above, dielectric layer 36
1, 36
2Material comprise teflon of aluminium oxide, beryllia (BeO), sapphire, glass fibre, glass epoxy resin, filling pottery etc.Another example of contact tab 31 is the glass bead (perhaps other shape) that scribbles tungsten or other hard metal.Another example of contact tab 31 be by the hard metal sphere such as nickel, beryllium, aluminium, copper, nickel-cobalt-ferroalloy or Fe-Ni alloy (perhaps such as square, trapezoidal, taper or conical other shape) contactor.
In addition, contact tab 31 can be by such as nickel, aluminium, copper, and the base metal of other perhaps above-mentioned alloy and so on is made, and is coated with the high conductivity anti-oxidation metal such as gold, silver, nickel palladium, rhodium, nickel gold or iridium thereon.Contact tab 31 by soft soldering, hard solder, melting welding, comprise that hot sonic soldering connects, the various solder technology of hot pressing welding and supersonic welding connection technology, perhaps by the coated with conductive adhesive attachment in lead 35 tops.The shape of contact tab 31 can be hemispheric, so that its non-spherical part is attached to the end of lead 35.
Figure 11 is the cross sectional front view of another embodiment of contact structures of the present invention, and described contact structures have a plurality of TAB lead-in wire contactors that are fixed in the contact substrate 60 contactor connecting through holes.Figure 12 is the top view of the contact structures of Figure 11.In this example, constitute contact structures by contactor 30 being assembled in the contactor connecting through hole on the contact substrate 60.An example of contact substrate is silicon substrate, glass substrate or ceramic substrate, utilizes etch process on substrate, for example uses a kind of zanjon etching technique to generate the contactor connecting through hole.Contactor 30 inserted the contactor connecting through hole and contactor 30 to be fixed in the substrate 60 in bonding agent 50 fixing modes.Bonding agent comprises for example epoxy resin, polyimide, thermoplastic adhesives and synthetic rubber binder.
Shown in the top view of Figure 12, ground plane 37 is connected to contacting on the solder joint 38 on the substrate 60 with lead 35 under the dielectric layer 36.As shown in phantom in Figure 12, the distance between the lead 35 becomes big (fan-out) in the end, with substrate 60 on circuit pattern or contact the pitch match of solder joint.
According to the present invention, contact structures have very high frequency span, to satisfy the requirement of semiconductor technology of future generation.Owing to contact structures are made of from the contactor that (TAB) technology that is dynamically connected forms a kind of band of use, so a large amount of contactor is with low cost, little spacing arrangement.The contact tab of wire termination is made by hard material, thereby can obtain desirable friction effect when contact structures are pushed down contact target.In addition, because contact structures of the present invention have microstrip line construction, thus can both set up impedance matching up to the end of contactor, thus extraordinary contact performance can in very high frequency range, be obtained.
Although only specify and described a most preferred embodiment here; but obviously; according to above-mentioned instruction of the present invention with in the scope of appended claim book, under the prerequisite in not breaking away from spirit of the present invention and protection domain, it all is possible much improving and changing.
Claims (20)
1, a kind of be used for be arranged on measured base plate on contact target set up the contact structures be electrically connected, comprising:
A plurality of by the contactor that places the lead on the ground plane to form by dielectric layer, described each lead has writing board shape, combine, be used to set up the microstrip line of predetermined properties impedance with described dielectric layer and ground plane to form one, and a contact tab of being made by a kind of hard conductive material is set in the end of each lead; And
One is used for fixing described a plurality of contactor thereon, and makes communication path extend to the supporting substrate of parts of this contact structures outside from described wire termination;
Wherein when contact structures are pushed down described measured base plate, described contactor bending, with respect to the measured base plate surface tilt that is fixed with contact target, make the sweep of contactor realize that with the contact tab that is positioned at wire termination the mode of friction effect produces a flexible contact force.
2, contact structures as claimed in claim 1, wherein said a plurality of contactors engage with supporting substrate.
3, contact structures as claimed in claim 1 further comprise a contact mount that is arranged on the ground plane periphery, is used for restriction contactor distortion when contactor is pushed down measured base plate.
4, contact structures as claimed in claim 1, wherein said lead is made by nickel, aluminium, copper, nickel palladium, rhodium, nickel gold or iridium.
5, contact structures as claimed in claim 1, wherein said contact tab are sphere, squarish, trapezoidal, pyramid or taper shape.
6, contact structures as claimed in claim 1, wherein said contact tab is made of the glass projection that scribbles tungsten or other metal.
7, contact structures as claimed in claim 1, wherein said contact tab is made by the hard metal that comprises nickel, beryllium, aluminium, copper, nickel-cobalt-ferroalloy or iron-nickel alloy.
8, described contact structures as claimed in claim 1, wherein said contact tab is made of the base metal such as nickel, beryllium, aluminium, copper, nickel-cobalt-ferroalloy or iron-nickel alloy, and is coated with the high conductivity anti-oxidation metal such as gold, silver, nickel palladium, rhodium, nickel gold or iridium thereon.
9, contact structures as claimed in claim 1, wherein said contact tab is attached on the lead by soft soldering, hard solder, melting welding or application electroconductive binder.
10, a kind of be used to realize be arranged on measured base plate on the contact structures that are electrically connected of contact target, comprising:
By a mutual juxtaposed ground floor of insulation course and the second layer, the described ground floor and the second layer are made of a plurality of contactors respectively;
A plurality of contactors on each layer in the described ground floor and the second layer are by placing the lead on the ground plane to constitute by a dielectric layer, wherein said each lead has writing board shape, the microstrip line that is used to set up the predetermined properties impedance that combines with formation and dielectric layer and this ground plane, and a contact tab of being made by hard conductive material is set at an end of each lead; And
One is used for fixing a plurality of contactors thereon, and makes communication line extend to supporting substrate on the external component of contact structures from described wire termination;
Wherein when contact structures are pushed down measured base plate, described contactor bending, with respect to the measured base plate surface tilt that is fixed with contact target, make the sweep of this contactor realize that with the contact tab that is positioned at wire termination a kind of mode of friction effect produces a contact force.
11, contact structures as claimed in claim 10, wherein said lead is made by nickel, aluminium, copper, nickel palladium, rhodium, nickel gold or iridium.
12, contact structures as claimed in claim 10, wherein said contact tab are sphere, squarish, trapezoidal, pyramid or taper shape.
13, contact structures as claimed in claim 10, wherein said contact tab is made of the glass projection that scribbles tungsten or other metal.
14, contact structures as claimed in claim 10, wherein said contact tab is made by the hard metal that comprises nickel, beryllium, aluminium, copper, nickel-cobalt-ferroalloy or iron-nickel alloy.
15, contact structures as claimed in claim 10, wherein said contact tab is made of the base metal such as nickel, beryllium, aluminium, copper, nickel-cobalt-ferroalloy or iron-nickel alloy, and is coated with the high conductivity anti-oxidation metal such as gold, silver, nickel palladium, rhodium, nickel gold or iridium thereon.
16, contact structures as claimed in claim 10, wherein said contact tab is attached on the lead by soft soldering, hard solder, melting welding or application electroconductive binder.
17, a kind of be used to realize be arranged on measured base plate on the contact structures that are electrically connected of contact target, comprising:
A plurality of by the contactor that places the lead on the ground plane to constitute by dielectric layer, described each lead has writing board shape, combine, be used to set up the microstrip line of predetermined properties impedance with described dielectric layer and ground plane to form one, and a contact tab of being made by a kind of hard conductive material is set at each wire termination; And
Be used for fixing described a plurality of contactor thereon and make communication path extend to the supporting substrate of parts of this contact structures outside from described wire termination, described supporting substrate has through hole, be used for holding as follows described contactor, soon contactor inserts supporting substrate and bonding agent is coated on described contactor and the described through hole, and described contactor is attached on the described supporting substrate;
Wherein when contact structures are pushed down described test base, described contactor bending, with respect to the measured base plate surface tilt that is fixed with contact target, make the sweep of contactor realize that with the contact tab that is positioned at wire termination a kind of mode of friction effect produces a flexible contact force.
18, contact structures as claimed in claim 17, wherein said contact tab are sphere, squarish, trapezoidal, pyramid or taper shape.
19, contact structures as claimed in claim 17, wherein said contact tab is made of the glass projection that scribbles tungsten or other metal.
20, contact structures as claimed in claim 17, wherein said contact tab is made by the hard metal that comprises nickel, beryllium, aluminium, copper, nickel-cobalt-ferroalloy or iron-nickel alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01120317A CN1397804A (en) | 2001-07-18 | 2001-07-18 | Contact structure having contact block |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN01120317A CN1397804A (en) | 2001-07-18 | 2001-07-18 | Contact structure having contact block |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1397804A true CN1397804A (en) | 2003-02-19 |
Family
ID=4664064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN01120317A Pending CN1397804A (en) | 2001-07-18 | 2001-07-18 | Contact structure having contact block |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1397804A (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103004035A (en) * | 2010-06-21 | 2013-03-27 | 苹果公司 | External contact plug connector |
| US8882524B2 (en) | 2010-06-21 | 2014-11-11 | Apple Inc. | External contact plug connector |
| US8931962B2 (en) | 2010-06-18 | 2015-01-13 | Apple Inc. | Dual orientation connector with side contacts |
| US8998632B2 (en) | 2010-05-28 | 2015-04-07 | Apple Inc. | Dual orientation connector with external contacts |
| US9054477B2 (en) | 2012-09-11 | 2015-06-09 | Apple Inc. | Connectors and methods for manufacturing connectors |
| US9059531B2 (en) | 2012-09-11 | 2015-06-16 | Apple Inc. | Connectors and methods for manufacturing connectors |
| US9093803B2 (en) | 2012-09-07 | 2015-07-28 | Apple Inc. | Plug connector |
| US9106031B2 (en) | 2011-11-07 | 2015-08-11 | Apple Inc. | Dual orientation electronic connector |
| US9112327B2 (en) | 2011-11-30 | 2015-08-18 | Apple Inc. | Audio/video connector for an electronic device |
| US9160129B2 (en) | 2012-09-11 | 2015-10-13 | Apple Inc. | Connectors and methods for manufacturing connectors |
| US9325097B2 (en) | 2012-11-16 | 2016-04-26 | Apple Inc. | Connector contacts with thermally conductive polymer |
| US9350125B2 (en) | 2013-01-24 | 2016-05-24 | Apple Inc. | Reversible USB connector with compliant member to spread stress and increase contact normal force |
| US9667007B2 (en) | 2011-11-07 | 2017-05-30 | Apple Inc. | Techniques for configuring contacts of a connector |
| CN113945864A (en) * | 2020-07-17 | 2022-01-18 | 合肥鑫晟光电科技有限公司 | Jig, detection system and substrate detection method |
| TWI798125B (en) * | 2022-07-05 | 2023-04-01 | 中華精測科技股份有限公司 | Detachable testing device, holder thereof, and space transformer module thereof |
-
2001
- 2001-07-18 CN CN01120317A patent/CN1397804A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9871319B2 (en) | 2010-05-28 | 2018-01-16 | Apple Inc. | Dual orientation connector with external contacts |
| US8998632B2 (en) | 2010-05-28 | 2015-04-07 | Apple Inc. | Dual orientation connector with external contacts |
| US9478905B2 (en) | 2010-05-28 | 2016-10-25 | Apple Inc. | Dual orientation connector with external contacts |
| US10090619B2 (en) | 2010-05-28 | 2018-10-02 | Apple Inc. | Dual orientation connector with external contacts |
| US10637192B2 (en) | 2010-05-28 | 2020-04-28 | Apple Inc. | Dual orientation connector with external contacts |
| US8931962B2 (en) | 2010-06-18 | 2015-01-13 | Apple Inc. | Dual orientation connector with side contacts |
| CN103004035A (en) * | 2010-06-21 | 2013-03-27 | 苹果公司 | External contact plug connector |
| US8882524B2 (en) | 2010-06-21 | 2014-11-11 | Apple Inc. | External contact plug connector |
| US8911260B2 (en) | 2010-06-21 | 2014-12-16 | Apple Inc. | External contact plug connector |
| US9106031B2 (en) | 2011-11-07 | 2015-08-11 | Apple Inc. | Dual orientation electronic connector |
| US9979139B2 (en) | 2011-11-07 | 2018-05-22 | Apple Inc. | Dual orientation electronic connector |
| US9667007B2 (en) | 2011-11-07 | 2017-05-30 | Apple Inc. | Techniques for configuring contacts of a connector |
| US9437984B2 (en) | 2011-11-07 | 2016-09-06 | Apple Inc. | Dual orientation electronic connector |
| US9647398B2 (en) | 2011-11-07 | 2017-05-09 | Apple Inc. | Dual orientation electronic connector |
| US9112327B2 (en) | 2011-11-30 | 2015-08-18 | Apple Inc. | Audio/video connector for an electronic device |
| US9093803B2 (en) | 2012-09-07 | 2015-07-28 | Apple Inc. | Plug connector |
| US9059531B2 (en) | 2012-09-11 | 2015-06-16 | Apple Inc. | Connectors and methods for manufacturing connectors |
| US9160129B2 (en) | 2012-09-11 | 2015-10-13 | Apple Inc. | Connectors and methods for manufacturing connectors |
| US9054477B2 (en) | 2012-09-11 | 2015-06-09 | Apple Inc. | Connectors and methods for manufacturing connectors |
| US9325097B2 (en) | 2012-11-16 | 2016-04-26 | Apple Inc. | Connector contacts with thermally conductive polymer |
| US9350125B2 (en) | 2013-01-24 | 2016-05-24 | Apple Inc. | Reversible USB connector with compliant member to spread stress and increase contact normal force |
| CN113945864A (en) * | 2020-07-17 | 2022-01-18 | 合肥鑫晟光电科技有限公司 | Jig, detection system and substrate detection method |
| CN113945864B (en) * | 2020-07-17 | 2024-01-16 | 合肥鑫晟光电科技有限公司 | Jig, detection system and substrate detection method |
| TWI798125B (en) * | 2022-07-05 | 2023-04-01 | 中華精測科技股份有限公司 | Detachable testing device, holder thereof, and space transformer module thereof |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |