CN1265505C - Contact structure with silicone grease contact point and general laminated structure using same - Google Patents
Contact structure with silicone grease contact point and general laminated structure using same Download PDFInfo
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- CN1265505C CN1265505C CN 01116842 CN01116842A CN1265505C CN 1265505 C CN1265505 C CN 1265505C CN 01116842 CN01116842 CN 01116842 CN 01116842 A CN01116842 A CN 01116842A CN 1265505 C CN1265505 C CN 1265505C
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Abstract
The present invention relates to a contact structure for establishing electric connection with a contact object, which has improved contact performance comprising frequency bandwidth, contact pitch, reliability and cost. The contact structure comprises a plurality of digitate contacts arranged on a contact substrate, wherein each contact comprises a silicon substrate with a bevel supporting part, an insulating layer formed on the silicon substrate and projected from the bevel support, and a conducting layer formed from conducting materials on the insulating layer, so that a column part can be generated by the insulating layer and the conducting layer; when the top end of the column part presses towards the contact target, the column part supplies elastic force in a transverse direction to establish contact force. An adhesive agent is used for sticking the contact to the surface of the contact substrate.
Description
Technical field
The present invention relates to a kind of be used for and the contact target of the lead-in wire of for example backing plate, electrode or circuit or device is set up the contact structures that electrically contact, especially relate to a kind of have more speed, frequency range, density and quality, contact structures and total laminated construction that uses contact structures to be used for testing semiconductor wafer, encapsulated semiconductor device, IC wafer, printed circuit or the like as an interface module of pencil (silicone grease) contact arranged thereon.
Background technology
In test high density and high-speed electric installation, for example LST and VLST circuit, high-performance is touched structure example, and the contact is essential uses as surveying, and forms interface module between test macro and tested device.Contact structures of the present invention are not limited to Test Application, and for example strenuous test of semiconductor wafer still comprises the test and the strenuous test of encapsulated semiconductor, printed circuit or the like.Characteristics of the present invention also can be used for more generally using, and comprise the IC lead-in wire, IC encapsulation and other electrical connection.Yet for convenience of explanation, main reference semiconductor wafer testing of the present invention is described.
Semiconductor device by situation with the formal testing of semiconductor wafer under, semiconductor test system, for example a kind of IC tester usually is attended by substrate processing, for example a kind of automatic wafer prober removes automatic testing semiconductor wafer.An example like this is shown among Fig. 1, and wherein semiconductor test system has a measuring head 100, in independent housing, is electrically connected to a branch of cable in the primary structure of test macro usually.Under the help of the controller 500 that drives by for example motor 510, measuring head 100 and substrate processing 400 mutual mechanical connections.
Pass through substrate processing, tested semiconductor wafer is provided to the test position of measuring head 100 automatically, come the consequent output signal (response) of the IC circuit on the semiconductor wafer in the comfortable test to be transmitted to semiconductor test system, wherein they and desirable data relatively judge that whether the IC circuit function on semiconductor wafer is correct.
Fig. 2 illustrates in more detail when semiconductor wafer of test, the structure of substrate processing (wafer prober) 400, measuring head 100 and an interface module 140.Measuring head 100 and substrate processing 400 are connected and composed an operation panel, pogo pin block, detecting card and other part by interface module 140.The operation panel 120 of Fig. 2 is one the unique printed circuit board (PCB) that is connected to electricity covering, coaxial cable, spring pin and the contact of measuring head of circuit.
Measuring head 100 comprises a lot of printed circuit board (PCB)s 150, and it is corresponding to the quantity of test channel or test pin.Each printed circuit board (PCB) has a contact 160 to go to receive an operation panel 120 corresponding contact terminals 121.One " frog " ring (pogo pin block) 130 is arranged on operation panel and gets on accurately judgement with respect to the contact position of substrate processing 400, frog ring 130 has a lot of contact pins 141, for example ZIF contact or pogo pin block, by coaxial cable 124, be connected to the contact terminal 121 on operation panel 120.
Illustrate as Fig. 2, measuring head 100 is arranged on the substrate processing 400, by interface module 140 machinery be electrically connected to substrate processing.On substrate processing 400, tested semiconductor wafer 300 is set on the chuck 180, detecting card 170 is provided on the tested semiconductor wafer 300, in the IC circuit of the semiconductor wafer in test, detecting card 170 has a lot of detections contact or contact (for example cantilever or pin) 190 to go to contact with circuit terminal or contact target.
The contact base of electric terminal or detecting card 170 is electrically connected to the contact pin 141 that is provided on the frog ring 130, also be connected to the contact terminal 121 of operation panel 120 with coaxial cable contact pin 141, wherein each contact terminal 121 is connected to the printed circuit board (PCB) 150 of measuring head 100, in addition, by the cable of a hundreds of inside cable is arranged, printed circuit board (PCB) 150 is connected to semiconductor test system.
Under this arrangement, the surface of surveying contact 190 contact semiconductor wafer 300 on chuck is gone to adopt test signal to give semiconductor wafer 300 and is received the consequent output signal of the semiconductor wafer 300 in the self-test and the desirable data that produced by semiconductor test system compare, and whether removes to judge the realization semiconductor wafer 300 of safety.
Fig. 3 is the bottom view of traditional detecting card 170 of a Fig. 2.In this example, detecting card 170 has an epoxide ring, is provided with a plurality of detection contacts 190 that are called probe or cantilever thereon.When being provided with semiconductor wafer 300, the chuck in semiconductor die film explorer 400 180 in Fig. 2, moves up, liner or the projection of top contact on wafer 300 of cantilever 190, the end of cantilever 190 is connected to line 194, it further is connected to the transmission line (not shown) that forms in detecting card 170, transmission line is connected to a plurality of electrodes 197, the spring pin 141 of its hookup 2.
Typically, detecting plate 170 is made of the multilayer polyimide substrate, on a lot of layers, ground plate, power panel, signal transmssion line are arranged, as known in prior art, each signal transmssion line has been designed for example 50Ohms of a distinctive impedance, by the balanced distribution parameter, promptly, the constant non-conducting and magnetic permeability of polyimides, the inductance of the signal path in detecting plate 170 and electric capacity.Therefore, holding wire is that unmatched line is set up the high-frequency transmission bandwidth and is used to provide high current peak that electric current produces by the output switch of device in the stable status neutralization in instantaneous state for wafer 300, for mobile noise, electric capacity 193 and 195 is provided on the detecting plate between power supply and floor.
An equivalent circuit of detecting plate 170 is shown in Figure 4, is used to explain the restriction in traditional detecting plate technology high frequency performance.As illustrating at Fig. 4 A and 4B, signal transmssion line extends from electrode 197, bar line 196 (impedance matching), line 194 and pin or cantilever (contact structures) 190 on detecting plate 170.Because line 194 and pin one 90 are unmatched, these parts are in high-frequency band, as the function at the inductance L shown in Fig. 4 C.Because line 194 is too long and pin one 90 about 20-30mm, during the high frequency performance of the device in test is tested, effectively restriction will be produced by inductance.
The factor of another limit frequency bandwidth in detecting plate 170 belongs at power supply shown in Fig. 4 D and the 4E and ground vial pin.If power line can provide enough big electric current to the device in the test, in testing apparatus, will can not limit the workpiece bandwidth in earnest.Yet because serial connecting line 194 and pin one 90 are used to provide power supply (Fig. 4 D) and serial connecting line 194 and pin one 90 to be used for power ground, signal (Fig. 4 E) is equivalent to inductance, and the high speed electric current flows and strictly limited.
And electric capacity 193 and 195 is provided between power line and ground wire, by leaching noise or the fluctuation pulse on power line, with the proper property of the device in the protection test.Electric capacity 193 has for example 10 μ F of a sizable value, if necessary, can disconnect from power line by switch.Electric capacity 195 has for example 0.01 μ F of a quite little capacitance, is fixedly attached to DUT.These electric capacity play high frequency decoupling function on power line, in other words, capacitance limits is surveyed the high frequency performance of contact.
Therefore, the most widely used detection as mentioned above contact is limited in the frequency bandwidth near 200MHz, and this is not enough for the modern semiconductor device of test.In industry, consider that frequency bandwidth can compare with the capacity of tester, it is typically about 1GHz or higher, is essential in the future.In addition, in industry, thirst for detecting plate and can control a lot of semiconductor device, memory especially, for example 32 or more, increase test capacity in parallel mode.
In traditional technology, detecting card as shown in Figure 3 and detection contact are made by hand, have caused the inconsistent of quality.This inconsistent quality comprises the fluctuation of volume, frequency bandwidth, contact force and impedance or the like.In traditional detection contact, making insecure another factor of contact performance is variation of temperature, and the semiconductor wafer in surveying the contact and testing has different temperature expansion coefficients, therefore, when variations in temperature, changing between contact position influences contact force, contact impedance and bandwidth on the contrary.
Therefore, an object of the present invention is to provide a kind of contact structures and interface module, this interface module uses contact structures to be used for being electrically connected the telecommunication that goes to set up therebetween with contact target, therefore, reaches a high frequency band, high number of pin and high contact performance and high reliability.
Another object of the present invention provides a kind of contact structures and uses the laminated construction of these contact structures with the integral body of the electrical connection in the semiconductor integrated circuit that is based upon test and has high frequency band very, to satisfy the test needs in semiconductor technology of future generation.
A further object of the present invention provides a kind of contact structures and a kind ofly wherein has the interface unit of these contact structures to go to set up the electrical connection that is used for semiconductor test, and it is suitable for a lot of semiconductor device of concurrent testing simultaneously.
A further object of the present invention provides a kind of contact structures and a kind ofly wherein has the interface unit of contact structures to go to set up the electrical connection that is used for semiconductor test, the temperature expansion coefficient of its semiconductor wafer in can compensating test.
Summary of the invention
In the present invention, being used for setting up the contact structures that electrically contact with contact target produces by semiconductor production process, contact structures are useful especially for testing semiconductor wafer, encapsulation LSI or printed circuit board (PCB) (device in the test), and wherein a large amount of silicone grease contact points is to form and be arranged on silicon or the ceramic substrate surface by for example photolithography.
Contact structures of the present invention are used for setting up electrical connection with a contact target, comprising:
A plurality of contacts, each has a contact stud (contactbeam), and when the top of described contact was pressed towards contact target, it presented elastic pressure, and each described contact comprises:
A silicon base has at least one sloping portion to be used for predetermined direction the contact being set;
An insulating barrier extends out from described silicon base; With
One is formed on conductive layer on the insulating barrier by electric conducting material, forms contact stud by insulating barrier and conductive layer thus, and described insulating barrier is electric insulation between described conductive layer and described silicon base;
A contact substrate is used to be provided with a plurality of contacts, and the contact substrate has a flat surface, is used for bonding in one way described silicon base thereon to set up described predetermined direction;
A kind of bonding agent is used for the flat surface of bonding described a plurality of contacts to described contact substrate; With
On described contact substrate, many traces are set, are connected respectively to described contact and remove to set up signal path and be used for being electrically connected with external equipment.
In contact structures of the present invention, bonding agent is applied to the two sides of described a plurality of contacts, preferably, preceding and the relief angle that the two sides that bonding agent is applied to described a plurality of contacts and silicon base by the plane that contacts substrate and each described contact form, more preferably, bonding agent is applied to the two sides of described a plurality of contacts, the preceding and relief angle that forms with silicon base by the plane that contacts substrate and each described contact and the basal surface of each contact.
Another aspect of the present invention is a contact assembly, is used for and contact target set up to be electrically connected and to dock between contact target and testing equipment, and contact assembly comprises:
One contact structures have a plurality ofly to be arranged on contact on the contact substrate with predetermined direction, and there is a contact stud each contact, and when the top of contact was pressed towards contact target, it presented elastic force.Each contact comprises a silicon base that at least one sloping portion is arranged, an insulating barrier, extend out from described silicon base, one is formed on conductive layer on the insulating barrier by electric conducting material, form contact stud by insulating barrier and conductive layer thus, described insulating barrier is electric insulation between described conductive layer and described silicon base, with a plurality of electrodes that contact on the substrate that are arranged on, is connected respectively to described contact.
An electrically conductive elastic sheet is set on contact structures, is formed by an elastic plate, this elastic plate has much the metal wire perpendicular to the horizontal plane of this elastic plate therein.
A detecting card that is positioned on the electrically conductive elastic sheet, its lower surface are provided with bottom electrode setting up by this electrically conductive elastic sheet and the electrical connection of the electrode of contact structures, and upper surface is provided with the top electrode that is connected to bottom electrode by interconnect traces; With
A pin block that is positioned on the detecting card is provided with a plurality of Elastic Contact pins corresponding to the top electrode position of detecting plate and is electrically connected to set up between the external component of detecting card and dependence test equipment.
According to the present invention, contact structures have very high frequency bandwidth to remove to satisfy the needs of testing in semiconductor technology of future generation, because being the semiconductor production process by the modern times, contact structures form, a large amount of contacts can be arranged on the little space, and this is applicable to tests a lot of semiconductor device simultaneously.
On substrate, produce a large amount of contacts owing to use little packaging technology simultaneously without manual process, may reach the unanimity of quality, high reliability and long-life on contact performance, in addition, because the contact can be fabricated in as on the identical backing material of the device in those tests, the temperature expansion coefficient of the device in the possible compensating test, this can be avoided the error of position.
Description of drawings
Fig. 1 is a sketch, is illustrated in substrate devices and structural relation between the semiconductor test system of a measuring head is arranged;
Fig. 2 is a sketch, illustrates one and is used to connect the example of the measuring head of semiconductor test system to the detailed structure of substrate devices;
Fig. 3 is a bottom view, and illustrating one has an epoxide ring to be used to settle a plurality of examples as the detecting plate of surveying the contact cantilever;
Fig. 4 A-4E is a circuit diagram, and the equal circuit of the detecting card of Fig. 3 is shown;
Fig. 5 is a profile, and contact structures and the semiconductor wafer that contact target is arranged that the present invention is set by the detecting card of column (silicone grease) contact of semiconductor production process production is shown;
Fig. 6 is a sketch, and the bottom view of contact structures of Fig. 5 of column of the present invention contact is shown;
Fig. 7 is a sketch, and the bottom view that has at another example of the contact structures of the contact that four direction is arranged of the present invention is shown;
Fig. 8 A is the profile of contact structures of the present invention, is used to illustrate an example that adopts bonding agent that the column contact is set thereon, and Fig. 8 B is the bottom view of the contact structures of Fig. 8 A;
Fig. 9 is a profile, illustrates one and uses contact structures of the present invention, the example of total laminated construction between the measuring head as the semiconductor device in test and Fig. 2;
Figure 10 A is a plane graph, and the example of the conductive elastomer of a laminated construction that is used for Fig. 9 is shown, and Figure 10 B is the profile of the conductive elastomer of Figure 10 A;
Figure 11 A-11D is a profile, illustrates one and is used to produce the example that the process of contact structures of the present invention is gone to form in column (silicone grease) contact.
Embodiment
Contact structures of the present invention will be described with reference to figure 5-11.Fig. 5 illustrates an example that column (silicone grease) contact 30 contact structures 10 that produce by semiconductor production process of the present invention are arranged.Contact structures 10 mainly are made up of contact substrate 20 and silicone grease contact point 30, and therefore contact structures 10 are positioned at the contact target top, and are for example tested contact pad designed on semiconductor wafer 100, when mutual pressures, and contact 30 and semiconductor wafer 100 foundation electrical connections.Though have only two contacts 30 to be presented among Fig. 5, in the application of reality, for example in the semiconductor wafer testing, a lot of contacts 30 is arranged on the contact substrate 20.
So many contact quilts are by identical semiconductor production process production, and for example photolithography is handled on silicon base, contacts on the substrate 20 with being arranged on, as below will explaining.Spacing between contact pad designed 320 may diminish to 50 μ m or still less, wherein since they be by identical semiconductor production process as wafer 300, contact on contact substrate 20 30 is easier of with identical spacing arrangement.
Silicone grease contact point 30 can be set directly on the contact substrate 20, as shown in Fig. 5 and Fig. 6, go to form contact structures, it can be used as the detecting card 170 of Fig. 2, or be manufactured in the encapsulation, for example traditional IC encapsulation that head is arranged so that encapsulation is set on the detecting plate, or and other substrate between interconnect.Because silicone grease contact point 30 can be fabricated in very little volume, one exercisable is arranged on the contact structures of contact of the present invention or the frequency range of detecting card can be increased to 2GHz or higher at an easy rate.Because little volume, the quantity of the contact on detecting card can be increased to, for example 2000 or more, this can be once concurrent testing 32 or more storage device simultaneously.
In addition, the contact 30 of contact on the substrate 20 form because contact structures of the present invention are by being arranged on, it generally is a kind of silicon base, environmental change for example the temperature expansion speed of silicon base be with those the test in those semiconductor wafers 300 be the same, therefore, the accurate position between contact 30 and contact target 320 can be kept in whole test.
In Fig. 5, there is a conductive layer 35 each contact 30 in referring to (post) shape form, and also there is a substrate 40 contact 30, and it is to be attached on the contact substrate 20.Interconnect traces 24 is connected to the conductive layer 35 below contact substrate 20, and such connection between interconnect traces 24 and conductive layer 35 is for example undertaken by solder sphere 28, and contact substrate 20 further comprises a through hole 23 and an electrode 22.By single line or conductive elastomer, electrode 22 is interconnection contact substrate 20 and external equipment, for example pogo pin block or IC encapsulation.
Therefore, when semiconductor wafer 300 moves up, interconnecting of silicone grease contact point 30 and 320 machineries of the contact target on wafer 300 and electricity, the result, one from contact target 320 to electrode 22 signal path set up at contact substrate 20, interconnect traces 24, through hole 23 and electrode 22 also act on the little spacings in contact 30 and deacclimatize external equipment to big spacing output for example pogo pin block or IC encapsulate.
Because the elastic force of the column of silicone grease contact point 30, when semiconductor wafer 300 was pressed towards contact substrate 20, the end of conductive layer 35 produced enough contact forces.When pressing to contact target 320 when being used for permeating by metal oxide layer, the end of conductive layer 35 is suitable for fining away and removes to reach wiping effect.
For example, if the target 320 on semiconductor wafer 300 has the surface of aluminium oxide at it, be electrically connected in order to set up with low contact impedance, wiping effect is essential.The elastic force that 30 columnar shape draws from the contact provides a suitable contact force to contact target 320, the elasticity that is produced by the elastic force of silicone grease contact point 30 also works, and compensation is at volume or be included in the difference of (smooth) on the plane on contact substrate 20, contact target 320, wafer 300 and the contact 30.
An example of the material of conductive layer 35 comprises nickel, aluminium, copper, nickel palladium, rhodium, nickel gold, iridium or several other accumulation of material.An example attempting to be used for the volume of the silicone grease contact point 30 that semiconductor test uses can be that whole height is 100-500 μ m, and horizontal length is 100-600 μ m and the roomy 30-50 μ m that is about, and is used in 320 50 μ m of contact target or more spacing.
Fig. 6 is the bottom view of the contact substrate 20 of the Fig. 5 that a plurality of silicone grease contact points 30 are arranged.In the system of reality, a lot of contacts, for example hundreds of or several thousand will arrange in the mode of Fig. 6.Interconnect traces 24 enlarges contacts 30 to the spacing of through hole 23 and electrode 22 as shown in Figure 6.Bonding agent 33 is provided at the contact point (inner face of contact 30) between the substrate 40 of substrate 20 and contact 30.Bonding agent 33 also is provided on the limit (the upper and lower limit of the contact among Fig. 6) of one group of contact 30.An example of bonding agent comprises the thermosetting bonding agent, for example epoxy, polyimides and silicones; With thermoplastic bonding agent, for example acrylic acid, nylon, contain phenoxy group and paraffin; With the UV curing adhesive.
Fig. 7 is a bottom view, and another example of contact structures of the present invention is shown, and wherein contact 30 is arranged on four direction.Similar to the example of Fig. 5 and Fig. 6, each contact 30 have a conductive layer 35 with one attached to the substrate 40 that contacts on the substrate 20.Interconnect traces 24 is connected to the conductive layer 35 below contact substrate 20, and interconnect traces 24 and conductive layer 35 are connected, for example, and by solder sphere 28.Contact substrate 20 further comprises a through hole 23 and an electrode 22, and by a line or conductive elastomer, electrode 22 interconnects contact substrate 20 and external equipment, for example pogo pin block or IC encapsulation.
Because silicone grease contact point 30 can be made into very little volume, one exercisable is arranged on the contact structures of contact of the present invention or the frequency range of detecting card can be increased to 2GHz or higher at an easy rate.Because little volume, the quantity of the contact on the detecting plate device can be 2000 or more, this can be once a lot of semiconductor device of concurrent testing simultaneously, for example 32 or more store IC.
Fig. 8 A and Fig. 8 B show another example of contact structures of the present invention.Fig. 8 A is the profile of contact structures, and Fig. 8 B is the bottom view of the contact structures of Fig. 8 A.Similar with the example of Fig. 5 and Fig. 6, silicone grease contact point 30 is arranged on the contact substrate.In the application of reality, a lot of contacts, for example hundreds of or several thousand will with Fig. 6,7 and 8B in mode arrange.Interconnect traces 24 is as 30 spacings to through hole 23 and electrode 22 in the expansion contact shown in Fig. 6.
Fig. 9 is a profile, and an example that uses contact structures of the present invention to form total laminated construction of an interface module is shown.Interface module will be as the interface between the measuring head of the semiconductor device in test and Fig. 2.In this example, interface module comprises that 250, one route plates of a conductive elastomer (detecting card) 260 and pogo pin block (frog ring) 130 are provided on the contact structures 10 with order shown in Figure 9.
Pogo pin block (frog ring) 130 equals to have shown in figure 2 a lot of spring pins interface of 120 between detecting plate 260 and operation panel.In the upper end of spring pin, in the measuring head 100 of Fig. 2, by operation panel 120, cable 240 for example coaxial cable is connected to the printed circuit board (PCB) that transmits (pin electronics plate) 150.Detecting card 260 in the above and below a lot of contact pad designed or electrode 262 and 265 are arranged.The output that electrode 262 and 265 is connected to contact structures by interconnect traces 263 goes to satisfy the spacing of the spring pin in the pogo pin block.
The contact structures 10 of Fig. 9 are used on the electrode 22 and the spherical point contacts 31 at the top of 30 conductive layer 35 provides in the contact.According to the volume of surface texture and relevant portion, the contact of this spheroid is useful, and especially, when the top in the contact provides when setting up a sharp-pointed relatively contact point, this spheroid contact is effective.When press contacts liner 320, so sharp-pointed contact point produces the effect of a scouring.When the thick inadequately whole and conductive elastomer 250 of electrode 22 contacted, the spheroid contact 31 on electrode 22 was useful, and therefore, if electrode 22 has when enough thickness is abundant to be contacted with conductive elastomer, spheroid contact 31 can be optional.
Figure 10 A is a plane graph, and the example of the conductive elastomer 250 of a laminated construction that is used for Fig. 9 is shown, and Figure 10 B is the profile of the conductive elastomer of Figure 10 A.In this example, conductive elastomer 250 is made up of silica gel sheet and many rows' filament 252.Filament (line) 252 is provided by the vertical direction at Fig. 9, promptly perpendicular to the horizontal plate of conductive elastomer 250.Thickness with the silica gel sheet is 0.2mm, and an example of the spacing between filament is 0.05mm.Such conductive elastomer is to be made by Shin-EtsuPolymer Co.Ltd Japan, is available on market.
Figure 11 A-11D is schematic profile, and an example that is used to produce the method for contact 30 of the present invention is shown.The more detailed description of production method and the variant version of production method be by at the U.S. Patent application NO.09/222 that is had by identical assignee of the present invention, provides in 176.In this method,, by production two inclinations (the one-tenth angle) part 62 is arranged in the contact shown in Figure 11 D according to contact structures
1With 62
2With at the mode shown in Fig. 5 and Fig. 8 A, sloping portion 62
2Be used on the plane of contact substrate 20, the contact is set.
In Figure 11 A, a boron-doping layer 48 is formed on silicon base 40, and wherein specific area 43 (etching) is restricted to and is not coated with boron.Non-conductive layer 52 is silicon dioxide SiO for example
2On boron-doping layer 48, provided and set up an insulating barrier.A silicon dioxide SiO
2Layer 54 also is provided at the bottom of silicon base 40 as etching mask.Be used to allow anisotropic etching by photolithography method (not shown), etching window 56 is limited at the both sides of substrate 40.
Anisotropic engraving method realized on silicon base 40, and as among Figure 11 B, it produces into angle part 62 along the crystrallographic plane of (111) silicon base 40
1With 62
2This angle of bottom corresponding to silicon base 40 is 54.7 °.On the other hand, sloping portion 62
2Can make by cutting silicon base 40, rather than engraving method above-mentioned.Because specific part 43 is not coated with boron, etched in these regional silicon base, remaining finger-like (pectination) structure (silicone grease contact point) is on the both sides of silicon base.In Figure 11 C, another photolithography method is implemented and forms the photoresist layer (not shown), so that conductive layer 35 is produced by a kind of electro-plating method.Silicone grease contact point 30 illustrates as Figure 11 D and is cut into suitable shape as a result.
According to the present invention, contact structures have very high frequency bandwidth to remove to satisfy the needs of the test of semiconductor technology of future generation, because by a Modern Small technology that is used for the semiconductor product generation method, contact structures are formed, a lot of contacts can be arranged on the very little space, and this is applicable to tests a lot of semiconductor device simultaneously, and contact structures of the present invention also can be used in more general application, comprise an IC head, IC encapsulation and other electrical connection.
Because a lot of contacts uses little packaging technology to be produced on substrate simultaneously and without hand-guided, may reach the consistency of quality, high reliability on contact performance and long-life, in addition, because the contact can be manufactured on identical backing material, as the material of the device in those tests, the temperature expansion coefficient of the device in this possibility compensating test, this can be avoided the error of position.
Though only an embodiment is illustrated and describes, should be appreciated that according to above-mentioned teaching in additional claim scope, do not break away from spirit and the scope of wanting of the present invention, a lot of changes of the present invention and variation are possible here.
Claims (16)
1. one kind is used for setting up the contact structures that are electrically connected with contact target, comprising:
A plurality of contacts, each has a contact stud, and when the top of described contact was pressed towards contact target, it presented an elastic force, and each described contact comprises:
A silicon base has at least one chamfered portion to be used at predetermined direction the contact being set;
An insulating barrier extends out from described silicon base; With
A conductive layer is formed on insulating barrier by electric conducting material, therefore produces described contact stud by insulating barrier and conductive layer, and described insulating barrier is electric insulation between described conductive layer and described silicon base;
A contact substrate is used to be provided with described a plurality of contact, and described contact substrate has a plane, is used for bonding in one way described silicon base thereon to set up described predetermined direction;
A kind of bonding agent is used for the described plane of bonding described a plurality of contacts to described contact substrate; With
On described contact substrate, provide many traces, be connected respectively to described contact and remove to set up signal path and be used for being electrically connected with external equipment.
2. as a kind of contact structures that claim 1 limited, wherein said bonding agent is a kind of temperature-curable bonding agent or a kind of ultraviolet curing bonding agent, and is applied to the two sides of described a plurality of contacts.
3. as a kind of contact structures that claim 1 limited, wherein said bonding agent is applied to the two sides of described a plurality of contacts, the angle, front and back that forms with silicon base by the plane that contacts substrate and each described contact.
4. as a kind of contact structures that claim 1 limited, further comprise:
A plurality of through holes on described contact substrate are connected to described a plurality of contact point trace line, are used for setting up between the upper surface of described contact substrate and lower surface being electrically connected; With
A plurality of electrodes are connected to described a plurality of through hole, are used for setting up being electrically connected to described external equipment.
5. as a kind of contact structures that claim 1 limited, wherein said contact substrate is a kind of silicon base.
6. as a kind of contact structures that claim 1 limited, further comprise a boron-doping layer between described silicon base and described insulating barrier.
7. as a kind of contact structures that claim 1 limited, wherein said conductive layer is made by conducting metal and is formed by electroplating processes.
8. as a kind of contact structures that claim 1 limited, wherein said insulating barrier is to be made by silicon dioxide.
9. one kind is used for and contact assembly that contact target set up to be electrically connected and to dock between contact target and testing equipment, comprising:
Contact structures, there are a plurality of contacts to be arranged on the contact substrate by bonding at predetermined direction, there is a contact stud each described contact, when the top of described contact is pressed towards contact target, this contact stud presents elastic force, each described contact includes a silicon base of at least one chamfered portion, an insulating barrier extends out from described silicon base, a conductive layer that on insulating barrier, forms by electric conducting material, therefore form described contact stud by insulating barrier and conductive layer, described insulating barrier is electric insulation between described conductive layer and described silicon base, with at the described a plurality of electrodes that are provided with and are connected respectively to described contact that contact on the substrate;
An electrically conductive elastic sheet that on described contact structures, is provided with, it is formed by an elastic plate, and this elastic plate has much therein perpendicular to the metal wire on the direction of its horizontal surface;
Be positioned at a detecting card on the electrically conductive elastic sheet, its basal surface is provided with bottom electrode to set up by this electrically conductive elastic sheet and the electrical connection of the electrode of these contact structures and be connected to the top electrode on upper surface of this bottom electrode by interconnect traces; And
A pin block is positioned on the detecting card, is provided with a plurality of Elastic Contact pins in the position corresponding to the top electrode of described detecting plate to be based upon the electrical connection between detecting card and the external equipment relevant with testing equipment.
10. as a kind of contact assembly that claim 9 limited, wherein when the top of described contact stud was pressed towards contact target, described contact stud transversely presented elastic force at it and goes to produce contact force.
11. as a kind of contact assembly that claim 9 limited, wherein contact structures comprise that further the spherical point contacts that is arranged on its electrode is to contact with described electrically conductive elastic sheet.
12., further comprise a boron-doping layer between described silicon base and described insulating barrier as a kind of contact assembly that claim 9 limited.
13. as a kind of contact assembly that claim 9 limited, wherein said conductive layer is to be made also and by electroplating processes by conducting metal to form.
14. as a kind of contact assembly that claim 9 limited, wherein said insulating barrier is to be made by silicon dioxide.
15. as a kind of contact assembly that claim 9 limited, wherein said bonding agent is a kind of temperature-curable bonding agent or a kind of ultraviolet curing bonding agent, and is applied to the two sides of described a plurality of contacts.
16. as a kind of contact assembly that claim 9 limited, wherein said bonding agent is applied to the two sides of described a plurality of contacts, the angle, front and back that forms with silicon base by the plane that contacts substrate and each described contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01116842 CN1265505C (en) | 2001-02-19 | 2001-02-19 | Contact structure with silicone grease contact point and general laminated structure using same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 01116842 CN1265505C (en) | 2001-02-19 | 2001-02-19 | Contact structure with silicone grease contact point and general laminated structure using same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1372355A CN1372355A (en) | 2002-10-02 |
| CN1265505C true CN1265505C (en) | 2006-07-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01116842 Expired - Fee Related CN1265505C (en) | 2001-02-19 | 2001-02-19 | Contact structure with silicone grease contact point and general laminated structure using same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1265505C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102707219A (en) * | 2012-06-21 | 2012-10-03 | 上海华岭集成电路技术股份有限公司 | Testing device for semiconductor device test |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7005751B2 (en) * | 2003-04-10 | 2006-02-28 | Formfactor, Inc. | Layered microelectronic contact and method for fabricating same |
| CN102033144B (en) * | 2009-09-30 | 2013-10-23 | 株式会社神户制钢所 | Electric contact member |
| DE102013008324A1 (en) * | 2013-05-08 | 2014-11-13 | Feinmetall Gmbh | Electrical contacting device |
| US10379140B2 (en) * | 2014-04-04 | 2019-08-13 | Feinmetall Gmbh | Contact-distance transformer, electrical testing device, and method for producing a contact-distance transformer |
| CN105206640B (en) * | 2015-10-08 | 2020-04-21 | 格科微电子（上海）有限公司 | Camera module and assembling method thereof |
| US20240027518A1 (en) * | 2022-07-21 | 2024-01-25 | Nanya Technology Corporation | Wafer tester and wafer testing method and system |
-
2001
- 2001-02-19 CN CN 01116842 patent/CN1265505C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102707219A (en) * | 2012-06-21 | 2012-10-03 | 上海华岭集成电路技术股份有限公司 | Testing device for semiconductor device test |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1372355A (en) | 2002-10-02 |
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Granted publication date: 20060719 Termination date: 20110219 |