1314651 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種探針組結構（pr〇be assembly)， 特別係有關於一種適用於積體電路測試之高頻探針組。 【先前技術】 在積體電路測試領域中，探針部份是介於探針頭之 訊號傳輸線與積體電路待測物（Device Under Test，DUT) 之界面。積體電路待測物係可為一半導體晶圓中其中一 晶粒，晶粒之表面上會形成有可供探針探觸之銲墊或凸 塊。 w町組兵有複數個探針 '測半導體晶粒上之銲墊或凸塊，能測試其積體電路之 電氣特性’藉以判定半導體晶粒是否為良好。良好的半 導體晶粒（KGD)將繼續進行後靖 退订俊、續之封裝或組裝製程。不 良的半導體晶粒將被捨輋 ^ 借棄或修補，以免增加額外的封裝 成本。然而’在積體電路測 式之訊唬傳輸過程中，受到 因導通高頻之切換電流而產 # μ工m 座生電源或接地點之高頻雜 甙的干擾，或受到傳輸結構 亩^卜4 高頻反射波，造成訊號失 【發明内容】 而無法精確地測量該丰！糾曰1 π 茨牛導髅晶粒之電氣特性。 本發明之主要目的係在 油丨μ — 吸货種適用於積體電路 測试之南頻探針組，藉由在 ^ ^ ^ , 針之外露部位接合上一终 端表面接合兀件，以消除探針 -α, ^ ^ 針之四頻反射波或是濾除電 身'或接地點之高頻雜訊。 ^ u14651 本發明之次—目的係在於 挪試之高頻 杈供種適用於積體電路 馬頻探針組，可使一終 如+導體曰私> 丄 饮070件更接近一 體B日粒之待測物，以加強狄碴A左上 效性。 強終端表面接合元件之有 本發明的目的及解決其 案來實現的。仂秘丄 τπ題疋採用以下技術方 ^ 、 據本發明，一種適用於葙做通> 鬲頻探針組至少包含一 、體電路測試之 以及一終端表第探針、—第二探針 、、細衣面接合元件。其中， 基材並具有一外露之第_探觸：-探針係設於該 基材並具有一外露端，“第-探針亦設於該 .^ ^ ^ 之第一探觸端。該終端表面接合元件 係鄰近於該第一探觸 ^ ^ ^ ^ 探觸端並且該終端表 面接合兀件之兩姓後八0, μ 端係刀別設於該第一探針與該第二探 針0 本發明的目的及組 及解決其技術問題還可採用以下技術 措施進一步實現。 在前述的高頻探針 可姐τ 该終端表面接合元件係可 為一晶片蜜電陡。 在前述的高頻控i 針組中，該第一探針係可為電源探 針，該第二探針传 你可為接地探針。 在前述的，頻控 茨探針組中，該第一探針係可為訊號探 針，該第二探針係 诉可為接地探針或電源探針。 在前述的高頻控 私針組中，該第一探針與該第二探針 係可皆為訊號探針。 在前述的高頻桉 沐針組中’該終端表面接合元件係可 6 1314651 為一晶片型電容。 在前述的高頻探針組中，該第一探針係可為電源探 針，該第二探針係可為接地探針。 在前述的高頻探針組中，該基材係可為同軸或其他 傳輸線結構。 在前述的高頻探針組中，該基材係可包含有一包覆 該第一探針之絕緣介電材料以及一外殼導體。 在前述的高頻探針組中，該第二探針可連接至該外 擊殼導體。 在前述的高頻探針組中，該絕緣介電材料可更包覆 該第二探針。 在前述的高頻探針組中，可另包含有至少一第三探 針，其係連接至該外殼導體。 在前述的高頻探針組中，該基材係可為一具有平面 導體之傳輸線結構。 在前述的高頻探針組中，該平面導體係可為一參考 • 〇 平面。 在前述的南頻探針組中’該基材係可包含有一包覆 該第一探針之絕緣介電層。 在前述的高頻探針組中，該第二探針係可連接至該 平面導體。 在前述的高頻探針组中，該絕緣介電層可更包覆該 第二探針。 在前述的高頻探針組中，可另包含有至少一第三探 7 1314651 針’其係連接至該平面導體β 在刚述的尚頻探針組中，該基材係可包含有一絕緣 介電層以及在該絕緣介電層兩面之一電源平面與一接 地平面’該第一探針係連接至該電源平面，該第二探針 係連接至該接地平面。 【實施方式】1314651 IX. Description of the Invention: [Technical Field] The present invention relates to a probe set structure, and more particularly to a high frequency probe set suitable for integrated circuit testing. [Prior Art] In the field of integrated circuit testing, the probe portion is an interface between the signal transmission line of the probe head and the Device Under Test (DUT). The integrated circuit to be tested may be one of the semiconductor wafers, and a pad or bump for probe detection may be formed on the surface of the die. The w-machi group has a plurality of probes 'measuring the pads or bumps on the semiconductor die, and can test the electrical characteristics of the integrated circuit' to determine whether the semiconductor die is good. A good semiconductor die (KGD) will continue to be post-exit, and the packaging or assembly process will continue. Defective semiconductor dies will be discarded or repaired to avoid additional packaging costs. However, in the transmission process of the integrated circuit measurement mode, it is interfered by the high-frequency noise generated by the switching power of the high-frequency switching current source or the grounding point, or the transmission structure is mu. 4 high-frequency reflected waves, causing the signal to lose [invention content] and can not accurately measure the abundance! Correct the electrical characteristics of the 1 π 茨 牛 髅 髅 髅 髅. The main object of the present invention is to eliminate the oil-frequency μ-suction type of the south-frequency probe set suitable for the integrated circuit test, and to eliminate the joint surface of the upper end of the needle by joining the upper end surface of the needle to eliminate the joint The probe-α, ^ ^ pin quadruple reflected wave or the high frequency noise of the electric body ' or ground point. ^ u14651 The second aspect of the present invention is to apply the high frequency 杈 seed supply to the integrated circuit horse frequency probe set, so that one end can be like a + conductor & & 070 070 070 pieces closer to the integrated B day grain The object to be tested is to strengthen Dixie A's left-up effect. The strong terminal surface engaging elements are achieved by the objects and solutions of the present invention.仂 丄 丄 丄 丄 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 据 据 据 据 据 据 据 据 据 据 据 据 据, fine clothing surface joint components. Wherein, the substrate has an exposed first probe: the probe is disposed on the substrate and has an exposed end, and the “first probe is also disposed at the first probe end of the ^^^^. The terminal surface engaging component is adjacent to the first probe ^ ^ ^ ^ probe end and the terminal surface is joined to the two surnames of the component, and the μ end is disposed on the first probe and the second probe Needle 0 The object and group of the present invention and solving the technical problems thereof can be further realized by the following technical measures. In the above-mentioned high-frequency probe, the terminal surface-engaging component can be a wafer honey-electric steep. In the frequency-controlled i-needle set, the first probe system can be a power probe, and the second probe can transmit a ground probe. In the aforementioned frequency control probe set, the first probe system It can be a signal probe, and the second probe can be a ground probe or a power probe. In the above-mentioned high frequency control private needle set, the first probe and the second probe can both be signals. In the above-mentioned high frequency microwave needle group, the terminal surface bonding component can be a chip type capacitor. In the high frequency probe set, the first probe system can be a power probe, and the second probe can be a ground probe. In the aforementioned high frequency probe set, the substrate can be coaxial or Other transmission line structures. In the aforementioned high frequency probe set, the substrate may include an insulating dielectric material covering the first probe and a case conductor. In the aforementioned high frequency probe set, the first The second probe may be connected to the outer shell conductor. In the foregoing high frequency probe set, the insulating dielectric material may further cover the second probe. In the foregoing high frequency probe set, an additional There is at least one third probe connected to the outer casing conductor. In the aforementioned high frequency probe set, the substrate may be a transmission line structure having a planar conductor. In the aforementioned high frequency probe set, The planar guiding system can be a reference 〇 plane. In the aforementioned south frequency probe set, the substrate can include an insulating dielectric layer covering the first probe. The second probe is connectable to the planar conductor. In the aforementioned high frequency probe set, the The edge dielectric layer may further cover the second probe. In the foregoing high frequency probe set, at least one third probe 7 1314651 pin may be further included, which is connected to the planar conductor β. In the frequency probe set, the substrate may include an insulating dielectric layer and a power plane and a ground plane on both sides of the insulating dielectric layer. The first probe system is connected to the power plane. The needle system is connected to the ground plane.
本發明以下列具體實施例具體說明一種適用於積體 電路測試之高頻探針組。依據本發明之第一具體實施 例’揭示一種適用於積體電路測試之高頻探針組1〇〇， 可裝没至一探針卡（probe eard)或其他測試介面。請參 閱第1圖所示，該高頻探針組100至少包含一基材11〇、 一第一探針120、一第二探針13〇以及一終端表面接合 疋件140。在本實施例中，該基材11〇係可為同轴或其 他傳輸線結構。例如，該基材110係可包含有一包覆該 第一探針120之絕緣介電材料111以及一外殼導體 11 2。該外殼導體i丨2係可為圓形同軸心之結構。 其中，該第一探針H 20係設於該基材11〇並具有一 外露之第一探觸端丨21，且該第二探針13〇亦設於該基 材no並具有一外露之第二探觸端131，用以與一待測 半導體晶粒上對應位置之銲墊或凸塊作導電接觸。在本 實施例中，該第一探針120係可為電源探針或為訊號探 針，該第二探針130係可為接地探針。該第二探針 係可連接至該外殼導體n八該第一探針12〇與該第二 探針130之幾何形狀係可為針狀、圓錐狀、圓柱狀或= 1314651 帶狀該第一探針120斑該第-樓4+ 11Λ 微型化，以極小化其針：ST之設計係可採 笛_城 化其針長，並可使該第一探針120與該The present invention specifically illustrates a high frequency probe set suitable for use in integrated circuit testing in the following specific embodiments. According to a first embodiment of the present invention, a high frequency probe set 1 适用 suitable for integrated circuit testing can be mounted to a probe eard or other test interface. Referring to FIG. 1, the high frequency probe set 100 includes at least a substrate 11A, a first probe 120, a second probe 13A, and a terminal surface bonding element 140. In this embodiment, the substrate 11 can be coaxial or other transmission line structure. For example, the substrate 110 can include an insulating dielectric material 111 covering the first probe 120 and a housing conductor 11 2 . The outer casing conductor i丨2 can be a circular concentric structure. The first probe H 20 is disposed on the substrate 11 and has an exposed first probe end 21, and the second probe 13 is also disposed on the substrate no and has an exposed The second probe end 131 is configured to make conductive contact with a pad or bump corresponding to a position on the semiconductor die to be tested. In this embodiment, the first probe 120 can be a power probe or a signal probe, and the second probe 130 can be a ground probe. The second probe is connectable to the outer casing conductor n. The geometry of the first probe 12 〇 and the second probe 130 may be acicular, conical, cylindrical or = 1314651 strip. The probe 120 spotted the first floor 4+11Λ miniaturized to minimize its needle: the design of the ST can be used to pick up the needle length and enable the first probe 120 to
低。/針130之寄生電感（parasitic inductance)減至最 於可取得較小的寄生電感值而有效延伸訊號傳輸 。在本實施例中，迴路電流（returning謝之走 ::為SG之樣式，其中s係表示訊號探針，〇係表示 考平面導體探針G，共同形成微小之迴路，該迴路面 積與寄生電感量成正比。在不同實施例中，迴路電流之 走向係可4 GS、GSG、GSSG等#固^之樣式。 _該終端表面接合元件14〇係具有一第一電極端i4i 與—第二電極端142。請再參閱第1圖所示，該終端表 面接合元件140係鄰近於該第一探觸端121與該第二探 觸端131。並且，該終端表面接合元件14〇之第一電極low. The parasitic inductance of the pin 130 is reduced to the point where the smaller parasitic inductance value is obtained and the signal transmission is effectively extended. In this embodiment, the return current (returning:: is the SG pattern, where s is the signal probe, and the 表示 is the plane conductor probe G, which together form a tiny loop, the loop area and the parasitic inductance The amount is proportional to the loop current. In the different embodiments, the loop current can be in the form of 4 GS, GSG, GSSG, etc. _ The terminal surface bonding component 14 has a first electrode end i4i and a second electric Extreme 142. Referring again to Figure 1, the terminal surface engaging element 140 is adjacent to the first probe end 121 and the second probe end 131. And, the terminal surface engages the first electrode of the element 14
端141與第二電極端142分別焊設於該第一探針與 該第一探針I30。此外，在本實施例中，該終端表面接 合元件140係可為一晶片型電阻，配合該第一探針 係為訊號探針並且該第二探針13〇係為接地探針，以構 成 SG 同轴探針結構（sg coaxiai pr〇be structUre)，或者 該第二探針130可為電源探針，其中S係表示訊號探針 (signal probe); G 係表示接地探針（ground probe)，故 該終端表面接合元件140係可構成為一極接近該第一 探針探觸端121之終端電阻（terinination resistor)，具 有濾除該第一探針120之高頻反射波之功效。或者，該 終端表面接合元件係可為一晶片型電容，該第一探 9 1314651 針1 20係為電源探針，該第二探針130係為接地探針， 故該終端表面接合元件140係構成為一極接近第一探 =探觸端121之旁路電容，以濾除因導通高頻之切換電 叫而產生電源或接地點之高頻雜訊。 針因此，該終端表面接合元件140具有消除該第一探 〇之兩頻反射波或滅除電源或接地點之高頻雜訊 之功能。由於該終端表面接合元件140係鄰近於該第一 魯 j觸端121與該第二探觸端131，且跨越並接合在該第 —探針120與該第二探針13〇之外露部位，使該終端表 面接合元件140更接近一如半導鱧晶粒之待測物，以加 強該終端表面接合元件14〇之有效性。在本實施例中， 3 、’、端表面接σ元件丨4 〇與晶粒待測物之距離係可控 制在最高頻訊號成份之波長的四十分之一内，使該終端 表面接合70件140更有效消除該第一探針12〇之高頻反 射波或濾除電源或接地點之高頻雜訊。 • 依據本發明之第二具體實施例，揭示另一種適用於 積體電路測試之咼頻探針組，請參閱第2圖所示，主要 2件係與第一具體實施例相同’如一基材η〇、一第一 ^針12〇、一第二探針130以及一終端表面接合元件140 等不再重複贅述。該高頻探針組可另包含有至少一第 三探針其係連接至該外殼導鱧112。在本實施例 中，該第三探針150係可為接地探針，並配合該第一探 針120係為訊號探針並且該第二探針13〇係為接地探 針，以構成GSG同轴探針結構（GSG e〇axial ρΓ〇“ 10 1314651 structure)。 依據本發明之第三具體實施例，揭示 下另一種適用於 積體電路測試之高頻探針組，請參閱第 圖所示，該高 頻探針組200至少包含一基材210、一货 卑一探針220、 一第二探針230以及一終端表面接合元 u 1千240。在本實 施例中，該基材2 1 0係可為雙同轴傳輪 哪箱構。例如， 該基材210係可包含有一包覆該第一探 野2 2 0之絕緣介 電材料211以及一外殼導體212，其中社 、该絕緣介電材料 211可更包覆該第二探針23〇。該第—揸 ^ 探針220與該第 二探針230皆係設於該基材2丨〇並分 』具有一外露之第 一探觸端221與一外露之第二探觸端23ι，用以與一待 測半導體晶粒上對應之料或凸塊接觸。纟本實施例 :，該第-探針220與該第二探針23〇係可皆為訊號探 針。 請再參閱第3圖所示，該終端 碼表面接合元件240係 鄰近於該第一探觸端221與該笫-加a ^ + 丹落第—探觸端23 1，並且該 终端表面接合元件240之一篦一 髮概端241與一第二電 極端242係分別焊設於該第一 、 ?10。士 士傘 探針22〇與該第二探針 23 0。在本實施例中，該終 曰 面接合元件240係可為 一晶片型電阻，故該終蠕表面接 ^ ^ ^ 甶接合化件240係可構成為 一極接近探針探觸端 铁 ..、 ’、、電阻（terminatioi reS1St〇r)。因此，該終端表 _ 馇 扠处^ 设。凡件240具有濾除該 第一探針220與該第二探斜 之高頻反射波之功效。 清再參閱第3圖所示，該 门頸探針組2 00可另包含 1314651 有至少一第三探針250與一第四探針26〇，該第三探針 250與該第四探針鳩皆係連接至該外殼導體μ。在 本實施例中，該第二探針25〇為接地探針且該第四探針 260係為接地探針，而該第一探針22〇與該第二探針23〇 係皆為訊號探針，以構成GSSG雙同軸探針結構（〇88〇 dual-coaxial pr〇be structure)。 依據本發明之第四具艎實施例’揭示另一種適用於 積體電路測試之高頻探針組，請參㈣4圖所示，該高 _頻探針組300至少包含一基材310、-第-探針32〇、 一第一探針33〇以及一終端表面接合元件3該基材 3 10係可為一具有平面導體312之傳輸線結構。在本實 施例中，該平面導體3 12係可為一參考平面。通常該平 面導體312係可為一扁平帶狀之結構，並可為水平向或 垂直向。該平面導體312係在靠近一待測半導體晶粒附 近，並與該第二探針330直接連接，形成電氣與機械結 •構之一個完整構件。該基材3 1〇係可包含有一包覆該第 一探針320之絕緣介電層311，其係提供該第一探針 與該平面導體3 1 2間之絕緣作用。以電氣特性而言該 絕緣介電層311提供一個均勻固定的介電常數。以機械 結構而言，該絕緣介電層311提供一個連結該第一探針 3 20與該平面導體313 一個穩定的機械支撐力量，形成 一個完整的機械構件。該基材310係為具有固定特性阻 抗（characteristic impedance)之傳輸線結構，特別適用 於高頻訊號之傳輪。 12 1314651 其中’該第一探針320係設於該基材31〇並具有一 外露之第-探觸端321，且該第二探針33〇亦設於該基 材3i0並具有-外露之第二探觸端33卜通常該第一探The end 141 and the second electrode end 142 are respectively soldered to the first probe and the first probe I30. In addition, in this embodiment, the terminal surface bonding component 140 can be a wafer type resistor, and the first probe is a signal probe and the second probe 13 is a grounding probe to form an SG. The coaxial probe structure (sg coaxiai pr〇be structUre), or the second probe 130 can be a power probe, wherein the S system represents a signal probe; the G system represents a ground probe, Therefore, the terminal surface bonding component 140 can be configured as a terinination resistor that is close to the first probe probe end 121 and has the effect of filtering out the high frequency reflected wave of the first probe 120. Alternatively, the terminal surface bonding component can be a wafer type capacitor, the first probe 9 1314651 pin 126 is a power supply probe, and the second probe 130 is a grounding probe, so the terminal surface bonding component 140 is The bypass capacitor is configured to be close to the first probe = the probe terminal 121, so as to filter out high frequency noise generated by the power switch or the grounding point due to the switching of the high frequency switching. Needle, the terminal surface engaging element 140 has the function of eliminating the two-frequency reflected wave of the first probe or erasing the high frequency noise of the power or ground. Since the terminal surface engaging element 140 is adjacent to the first lub end 121 and the second probe end 131, and spans and engages the exposed portion of the first probe 120 and the second probe 13〇, The terminal surface engaging element 140 is brought closer to a test object such as a semi-conductive die to enhance the effectiveness of the terminal surface engaging element 14 . In this embodiment, the distance between the end surface of the sigma element 丨4 〇 and the die to be tested can be controlled within one tenth of the wavelength of the highest frequency signal component, so that the terminal surface is bonded 70. The component 140 is more effective in eliminating high frequency reflected waves of the first probe 12 or filtering high frequency noise of the power source or the grounding point. According to the second embodiment of the present invention, another type of frequency probe set suitable for integrated circuit testing is disclosed. Referring to FIG. 2, the main two parts are the same as the first embodiment. Η〇, a first pin 12〇, a second probe 130, a terminal surface engaging element 140, and the like are not repeatedly described. The high frequency probe set can further include at least one third probe coupled to the housing guide 112. In this embodiment, the third probe 150 can be a grounding probe, and the first probe 120 is a signal probe and the second probe 13 is a grounding probe to form a GSG. Axial probe structure (GSG e〇axial ρΓ〇 "10 1314651 structure). According to a third embodiment of the present invention, another high frequency probe set suitable for integrated circuit testing is disclosed, see the figure The high frequency probe set 200 includes at least one substrate 210, a cargo probe 220, a second probe 230, and a terminal surface bonding element u 1 240. In this embodiment, the substrate 2 The substrate 210 may include an insulating dielectric material 211 covering the first field 220 and a casing conductor 212, wherein the substrate 210 may include a double coaxial transmission wheel. The insulating dielectric material 211 can further cover the second probe 23A. The first probe 220 and the second probe 230 are both disposed on the substrate and have an exposed a probe end 221 and an exposed second probe end 23ι for contacting a corresponding material or bump on a semiconductor die to be tested In this embodiment, the first probe 220 and the second probe 23 can both be signal probes. Referring to FIG. 3 again, the terminal code surface engaging component 240 is adjacent to the first The probe end 221 and the 笫-plus a ^ + 丹丹--the probe end 23 1 , and one of the terminal surface engaging elements 240 and the second electrode end 242 are respectively soldered to the first 1. The 10. Umbrella probe 22 〇 and the second probe 23 0. In this embodiment, the final surface bonding component 240 can be a wafer type resistor, so the final surface is connected. ^ 甶 splicing member 240 can be configured to be close to the probe probe end iron.., ',, resistor (terminatioi reS1St〇r). Therefore, the terminal table _ 馇 处 。 凡 凡 凡 凡 凡 凡In addition to the effect of the first probe 220 and the second probe high frequency reflected wave. As shown in FIG. 3, the door neck probe set 200 may additionally include 1314651 having at least one third probe 250. And a fourth probe 26, the third probe 250 and the fourth probe are connected to the outer casing conductor μ. In this embodiment, the second probe 25〇 is a grounding probe and the fourth probe 260 is a grounding probe, and the first probe 22〇 and the second probe 23 are both signal probes to form a GSSG dual coaxial probe structure. (〇88〇dual-coaxial pr〇be structure). According to the fourth embodiment of the present invention, another high-frequency probe set suitable for integrated circuit testing is disclosed, as shown in Figure 4, which is shown in Figure 4, which is high _ The frequency probe set 300 includes at least a substrate 310, a - probe 32 〇, a first probe 33 〇, and a terminal surface engaging component 3 . The substrate 3 10 can be a transmission line structure having a planar conductor 312 . . In this embodiment, the planar conductor 3 12 can be a reference plane. Typically, the planar conductor 312 can be a flat strip-like structure and can be horizontal or vertical. The planar conductor 312 is adjacent to a semiconductor die to be tested and is directly connected to the second probe 330 to form a complete component of the electrical and mechanical structure. The substrate 3 1 can include an insulating dielectric layer 311 covering the first probe 320 to provide insulation between the first probe and the planar conductor 31. The insulating dielectric layer 311 provides a uniformly fixed dielectric constant in terms of electrical characteristics. In terms of mechanical structure, the insulating dielectric layer 311 provides a stable mechanical support force connecting the first probe 306 and the planar conductor 313 to form a complete mechanical component. The substrate 310 is a transmission line structure having a fixed characteristic impedance, and is particularly suitable for a high-frequency signal transmission wheel. 12 1314651 wherein the first probe 320 is disposed on the substrate 31 and has an exposed first probe terminal 321 , and the second probe 33 is also disposed on the substrate 3i0 and has an exposed The second probe end 33 usually the first probe
針320之第一探觸端321與該第二探針330之第二探觸 端331係為尖端’其係與一待測半導體晶粒上對應位置 之銲墊或凸塊接觸。該第-探針320與該第二探針33〇 之另一端係與該基材110之訊號導體或該平面導體312 直接連接’以形成電氣與機械結構之一個完整構件。在 本實施例中’該第—探針32()係可為電源探針或為訊號 探針，該第二探針330係可為接地探針。The first probe end 321 of the pin 320 and the second probe end 331 of the second probe 330 are a tip end which is in contact with a pad or bump at a corresponding position on a semiconductor die to be tested. The other end of the first probe 320 and the second probe 33A are directly connected to the signal conductor of the substrate 110 or the planar conductor 312 to form a complete component of the electrical and mechanical structure. In the present embodiment, the first probe 32() can be a power probe or a signal probe, and the second probe 330 can be a ground probe.
請再參閲第4圖所示’該終端表面接合元件340係 鄰近於該第一探觸端321與該第二探觸端331並且該終 端表面接Μ件34。之-第—電㈣341與—第二電極 端342係分別設於該第一探針320與該第二探針330。 在本實施例中，該終端表面接合元件34〇係可為一晶片 型電阻’ J·該帛一探針32〇係為訊號探針，該第二探針 33〇係為接地探針，以構成SG微帶探針結構（SG microstrip probe structure)’故該終端表面接合元件34〇 係可為極接近該第—探針探觸端321之終端電阻 (termination resistor)。或者，該終端表面接合元件34〇 係可為明片型電容，該第一探針320係可為電源探 針，該第二探針330係可為接地探針，故該終端表面接 σ元件340係可為一極接近該第一探針探觸端32ι之旁 路電令。因此’該終端表面接合元件34〇具有消除該第 13 1314651 一探針320之高頻反射波或濾除電源或接地點之高頻 雜訊之功能。此外’該縿端表面接合元件3 4 〇係極接近 如半導體晶粒之待測物，使該終端表面接合元件34〇 之效果最佳化。 依據本發明之第五具體實施例，揭示另一種適用於 積體電路測試之高頻探針組，請參閱第5圖所示，主要 兀件係與第四具體實施例相同，如一基材3丨〇、一第一 探針320、一第二探針33〇以及一終端表面接合元件34〇 等，不再重複贅述。該高頻探針組可另包含有至少一第 —探針350，其係連接至該平面導體312，故該第三探 針350係可為接地探針，並配合該第一探針係為訊 號探針並且該第二探針33〇係為接地探針，以構成GSg 微帶探針結構（GSG microstrip pr〇be structure)。 依據本發明之第六具體實施例，揭示另一種適用於 積體電路測試之高頻探針組。請參閱第6圖所示，該高 j探針組400至少包含一基材41〇、一第一探針^同 第一探針430以及一終端表面接合元件“ο。該基材 410係可為一具有平面導體412之傳輪線結構。在本實 施例中，該基材410係可包含有-包覆該第—探針42〇 與該第二探斜430之絕緣介電層4η。該第-探 與該笛-你r ^ 矛一探針430皆係設於該基材41〇並分別具 露之第—'卜 探觸端421與一外露之第二探觸端431。其 Z該第—探針420與該第二探針430係可皆為訊號探 14 1314651 請再參閱第ό圖所示’該終端表面接合元件44〇係 鄰近於該第一探觸端421與該第二探觸端431並且該終 端表面接合元件440之一第一電極端441與一第二電極 端442係分別焊設於該第一探針42〇與該第二探針 43〇。該終端表面接合元件440係可為一晶片型電阻， t該終端表面接合元件440係可為一極接近探針探觸 端之終端電阻（termination resist〇r)，故可濾除該第一 探針钧〇與該第二探針430之高頻反射波。具體而言， 該高頻探針組400可另包含有至少一第三探針45〇與一 第四探針460，該第三探針45〇與該第四探針46〇皆係 連接至該平面導體412。在本實施例中，該第三探針45〇 係為接地探針且該第四探針46〇係為接地探針，而該第 一探針420與該第二探斜 休针430係皆為訊號探針，故可構 成GSSG微帶探針蛀 . | .苑構（GSSG microstrip probe structure) 〇 鲁 在不同實施例中，# 丄 該終端表面接合元件440亦可焊 设於該第一探針420你a* 與第三探針45〇，或焊設於該第二 探針430與該第四捏紅 私針46 0，或焊設於該第一探針42〇 與該平面導體412。瀹〜 也鱿是說，依不同之需求，該終端Referring again to Fig. 4, the terminal surface engaging member 340 is adjacent to the first probe end 321 and the second probe end 331 and the terminal surface contact member 34. The first-electrode (four) 341 and the second electrode end 342 are respectively disposed on the first probe 320 and the second probe 330. In this embodiment, the terminal surface bonding component 34 can be a wafer type resistor. The first probe 33 is a signal probe, and the second probe 33 is a grounding probe. The SG microstrip probe structure is configured so that the termination surface bonding component 34 can be a termination resistor that is in close proximity to the first probe probe end 321 . Alternatively, the terminal surface bonding component 34 can be a chip capacitor, the first probe 320 can be a power probe, and the second probe 330 can be a ground probe, so the terminal surface is connected to the sigma component. The 340 series can be a bypass to the bypass of the first probe probe 32. Therefore, the terminal surface bonding element 34 has a function of eliminating high frequency reflected waves of the probe 13 of the 1313 14651 or filtering out high frequency noise of the power source or the ground. Further, the end surface engaging member 34 is extremely close to the object to be tested such as the semiconductor die, and the effect of the terminal surface engaging member 34 is optimized. According to a fifth embodiment of the present invention, another high frequency probe set suitable for integrated circuit testing is disclosed. Referring to FIG. 5, the main components are the same as the fourth embodiment, such as a substrate 3.丨〇, a first probe 320, a second probe 33A, and a terminal surface engaging element 34, etc., are not repeated. The high frequency probe set may further include at least one first probe 350 connected to the planar conductor 312. Therefore, the third probe 350 may be a grounding probe, and the first probe system is matched with the first probe system. The signal probe and the second probe 33 are grounded probes to form a GSg microstrip probe structure (GSG microstrip pr〇be structure). In accordance with a sixth embodiment of the present invention, another high frequency probe set suitable for use in integrated circuit testing is disclosed. Referring to FIG. 6, the high j probe set 400 includes at least a substrate 41, a first probe, a first probe 430, and a terminal surface bonding component. The substrate 410 is In the present embodiment, the substrate 410 can include an insulating dielectric layer 4n covering the first probe 42A and the second probe 430. The first probe and the flute-your r^ spear-probe 430 are both disposed on the substrate 41 and respectively have the first----the probe end 421 and an exposed second probe end 431. The first probe 420 and the second probe 430 can both be signal detectors 14 1314651. Please refer to the second end of the drawing. The terminal surface engaging component 44 is adjacent to the first probe end 421 and the The first probe end 431 and the first electrode end 441 and the second electrode end 442 of the terminal surface engaging component 440 are respectively soldered to the first probe 42 〇 and the second probe 43 〇. The surface bonding component 440 can be a wafer type resistor, and the terminal surface bonding component 440 can be a terminal resistor that is close to the probe probe end. r), the high frequency reflected wave of the first probe 钧〇 and the second probe 430 can be filtered out. Specifically, the high frequency probe set 400 can further include at least one third probe 45 〇 And a fourth probe 460, the third probe 45A and the fourth probe 46A are connected to the planar conductor 412. In this embodiment, the third probe 45 is a grounding probe The fourth probe 46 is a grounding probe, and the first probe 420 and the second probe 430 are both signal probes, so that the GSSG microstrip probe can be formed. GSSG microstrip probe structure 不同 In various embodiments, the terminal surface bonding component 440 can also be soldered to the first probe 420, a* and the third probe 45〇, or soldered to the The second probe 430 and the fourth pinch red pin 46 0, or soldered to the first probe 42 〇 and the plane conductor 412. 瀹 ~ also said that the terminal is different according to the needs
表面接合元件440夕I <兩端係可分別焊設於訊號探針與 接地探針，或暑盆 疋关兩蠕分別焊設於訊號探針與訊號探 針，或是其兩端可公. % j为別焊設於訊號探針與該平面導體 依據本發明之第4~ β 币七具體實施例’揭示另一種適用於 15 412 ° 1314651 積體電路測試之高頻探針組，請參閱第7圖所示，主要 凡件係與第四具體實施例相同，如一基材310、一第一 探針320、一第二探針330以及一終端表面接合元件34〇 等’不再重複贅述。在本實施例中，該基材310係可另 包含一平面導體3 13。該平面導體3丨3係可為一參考平 面。在本實施例中，該第一探針320係為訊號探針且該 第二探針330係為接地探針，以構成SG帶狀線探針結 構（SG stripline probe structure)。 t 依據本發明之第八具體實施例，揭示另一種適用於 積體電路測試之高頻探針組，請參閱第8圓所示，主要 元件係與第六具體實施例相同，如一基材41〇、一第一 探針420、一第二探針430以及一終端表面接合元件44〇 等’不再重複赘述。該基材410係可另包含一平面導體 413 ^該平面導髏413係可為一參考平面。在本實施例 中’該第二探針450係為接地探針且該第四探針460係 鲁 為接地探針，而該第一探針420與該第二探針43〇係皆 為接地探針’故可構成GSSG帶狀線探針結構（gssg s t r i p 1 i n e p r o b e s t r u c t u r e ) 〇 依據本發明之第九具體實施例，揭示另一種適用於 積體電路測試之高頻探針組，請參閱第9圖所示，該高 頻探針組500至少包含一基材51〇、一第一探針52〇、 一第二探針530以及一終端表面接合元件54〇〇該基材 510係可為一具有平面導體512與513之傳輪線結構。 在本實施例中’該些平面導體512與513係可為垂直 16 1314651 向。該基材510係可更包含有一絕緣介電層511，該些 平面導體512與513係可位於該絕緣介電層511之兩相 對侧或兩相對内層中，凡是形成兩相對平行之平面導 體，絕緣介電層包覆該平面導體或介於其中均屬之。其 中，該平面導體512可作為一電源平面❶該平面導體 513係可為一接地平面。其中，該第一探針52〇係連接 至該平面導體512，該第二探針53〇係連接至該平面導 體5 13。該第一探針520與該第二探針53〇係分別具有 ❿一外露之第一探觸端521與一外露之第二探觸端531。 該終端表面接合元件540係鄰近於該第一探觸端 521與該第二探觸端531並且該終端表面接合元件 之一第一電極端541與一第二電極端542係分別設於該 第一探針5 20與該第二探針53 0。因此，該第一探針52〇 係為電源探針（power probe)，該第二探針53〇係為接地 探針（ground probe)，以構成PG低阻抗探針結構（pG 1〇w impedance probe structure)。該終端表面接合元件 54〇 _ 係可為一晶片型電容’故該終端表面接合元件5 4 〇係可 為一極接近探針探觸端之旁路電容，藉此濾除因導通高 頻之切換電流而產生電源或接地點之高頻雜訊。 依據本發明之第十具體實施例，揭示另一種適用於 積鳢電路測試之高頻探針組，請參閱第1 〇圖所示，該 高頻探針組600至少包含一基材61〇、—第一探針62〇、 一第一探針630以及一終端表面接合元件640。該基材 610係可為一具有平面導艘612與613之傳輸線結構。 17 B14651 在本實施例中，該些平面導體612與613係可為垂直 向。該基材61〇係可更包含有一包覆該第一探針62〇與 該第二探針630之絕緣介電層611。其中’該些平面導 體612與613係可位於該絕緣介電層611之兩相對側或 兩相對内層中，凡是形成兩相對平行之平面導體，絕緣 介電廣包覆該平面導體或介於其中均屬之。該平面導體 612與613係可為一參考平面、一接地面或一電源面。 該第一探針620與該第二探針63〇皆係設於該基材61〇 並分別具有一外露之第一探觸端621與一外露之第二 探觸端63i。其中，該第一探針62〇與該第二探針63〇 係可皆為訊號探針。 請再參閱第ίο圖所示，該終端表面接合元件64〇 係鄰近於該第一探觸端621與該第二探觸端63ι並且該 終端表面接合元件640之一第一電極端641與_第二電 極端642係分別焊設於該第一探針62〇與該第二探針 630。該終端表面接合元件64〇係可為一晶片型電阻， 故該終端表面接合元件64〇係可為一極接近探針探觸 端之終…(t_uation resistor)，故可據除該第一 探針620與該第二探針63〇之高頻反射波。具體而^ 該高頻探針組繼可另包含有至少一第三探針心」 第四探針660’該第三探針650係連接至該平面導體 612,該第四探針66〇係連接至該平面導體 實施例中’該“探針㈣與該第四探針Μ。係為^ 探針或電源探針’而該第一探針62〇與該第二探針㈣ 18 1314651 係皆為訊號探針，故可構成GSSG帶狀線探針結 (GSSG stripline probe structure) 〇 以上所述，僅是本發明的較佳實施例而已，並非 本發明作任何形式上的限制，雖然本發明已以較佳實 例揭露如上，然而並非用以限定本發明，任何熟悉本 業的技術人員，在不脫離本發明技術方案範圍内，當 利用上述揭示的技術内容作出些許更動或修飾為等 變化的等效實施例，但凡是未脫離本發明技術方案的 ’容’依據本發明的技術實質對以上實施例所作的任何 單修改、等同變化與修飾’均仍屬於本發明技術方案 範圍内。 、 【圖式簡單說明】 第1圖：依據本發明之第一具體實施例，一種適用於 體電路測試之高頻探針組之立體示意圖。 第2圖：依據本發明之第二具體實施例，另一種適用 鲁積體電路測試之高頻探針組之立體示意圖。 第3圖：依據本發明之第三具體實施例，另一種適用 積體電路測試之高頻探針組之立體示意圖。 第4圖：依據本發明之第四具體實施例，另一種適用 積體電路測試之高頻探針組之立體示意圖。 第S圖：依據本發明之第五具體實施例，另一種適用 積趙電路測試之高頻探針組之立體示意圖。 第6圖：依據本發明之第六具體實施例，另一種適用 積體電路測试之高頻探針組之立翘示意圖。 構 對 施 專 可 同 内 簡 的 積 於 於 於 於 於 19 1314651 第7圖：依據本發明之第七具體實施例，另一種適用於 積體電路測試之高頻探針組之立體示意圖。 第8圖：依據本發明之萆八具體實施例，另一種適用於 積體電路測試之高頻探針組之立體示意圖。 第9圖：依據本發明之第九具體實施例，另一種適用於 積體電路測試之高頻探針組之立體示意圖。 第丨〇圖：依據本發明之第十具體實施例，另一種適用 於積體電路測試之高頻探針組之立體示意圖。The surface bonding component 440 I < both ends can be respectively soldered to the signal probe and the grounding probe, or the heat pump is separately soldered to the signal probe and the signal probe, or both ends thereof can be publicized % j is a high-frequency probe set that is applied to the signal probe and the planar conductor according to the fourth to fourth embodiments of the present invention, and another high-frequency probe set suitable for the 15 412 ° 1314651 integrated circuit test is disclosed. Referring to FIG. 7, the main parts are the same as the fourth embodiment, such as a substrate 310, a first probe 320, a second probe 330, and a terminal surface engaging member 34, etc. Narration. In the present embodiment, the substrate 310 may further comprise a planar conductor 3 13 . The planar conductor 3丨3 can be a reference plane. In this embodiment, the first probe 320 is a signal probe and the second probe 330 is a ground probe to form an SG stripline probe structure. According to the eighth embodiment of the present invention, another high frequency probe set suitable for integrated circuit testing is disclosed. Referring to the eighth circle, the main components are the same as the sixth embodiment, such as a substrate 41. A first probe 420, a second probe 430, and a terminal surface engaging member 44, etc. 'will not be repeated. The substrate 410 can further comprise a planar conductor 413. The planar guide 413 can be a reference plane. In this embodiment, the second probe 450 is a grounding probe and the fourth probe 460 is a grounding probe, and the first probe 420 and the second probe 43 are grounded. The probe ' can constitute a GSSG strip line probe structure (gssg strip 1 ine probe structure). According to the ninth embodiment of the present invention, another high frequency probe set suitable for integrated circuit testing is disclosed. As shown, the high frequency probe set 500 includes at least a substrate 51A, a first probe 52A, a second probe 530, and a terminal surface engaging component 54. The substrate 510 can be a A transfer line structure having planar conductors 512 and 513. In the present embodiment, the planar conductors 512 and 513 may be in a vertical direction of 16 1314651. The substrate 510 may further include an insulating dielectric layer 511, and the planar conductors 512 and 513 may be located on opposite sides or two opposite inner layers of the insulating dielectric layer 511, where two relatively parallel planar conductors are formed. An insulating dielectric layer covers or is interposed between the planar conductors. The planar conductor 512 can serve as a power plane, and the planar conductor 513 can be a ground plane. The first probe 52 is tethered to the planar conductor 512, and the second probe 53 is tethered to the planar conductor 513. The first probe 520 and the second probe 53 respectively have an exposed first probe end 521 and an exposed second probe end 531. The terminal surface engaging component 540 is adjacent to the first probe end 521 and the second probe end 531, and the first electrode end 541 and the second electrode end 542 of the terminal surface engaging component are respectively disposed on the first A probe 5 20 and the second probe 53 0. Therefore, the first probe 52 is a power probe, and the second probe 53 is a ground probe to form a PG low impedance probe structure (pG 1〇w impedance). Probe structure). The terminal surface bonding component 54 〇 can be a wafer type capacitor. Therefore, the terminal surface bonding component 5 4 can be a bypass capacitor close to the probe probe end, thereby filtering the high frequency due to conduction. Switching current to generate high frequency noise at the power or ground. According to the tenth embodiment of the present invention, another high frequency probe set suitable for the test of the accumulation circuit is disclosed. Referring to FIG. 1 , the high frequency probe set 600 includes at least one substrate 61 , a first probe 62A, a first probe 630 and a terminal surface engaging element 640. The substrate 610 can be a transmission line structure having planar guides 612 and 613. 17 B14651 In this embodiment, the planar conductors 612 and 613 may be vertical. The substrate 61 further includes an insulating dielectric layer 611 covering the first probe 62A and the second probe 630. Wherein the planar conductors 612 and 613 may be located on opposite sides or in opposite inner layers of the insulating dielectric layer 611. Where two relatively parallel planar conductors are formed, the insulating dielectric covers the planar conductor or is interposed therebetween. All belong to it. The planar conductors 612 and 613 can be a reference plane, a ground plane or a power plane. The first probe 620 and the second probe 63 are disposed on the substrate 61 〇 and have an exposed first probe end 621 and an exposed second probe end 63i, respectively. The first probe 62A and the second probe 63 can both be signal probes. Referring to FIG. 00 again, the terminal surface engaging member 64 is adjacent to the first probe end 621 and the second probe end 63, and the first surface end 641 of the terminal surface engaging member 640 is _ The second electrode end 642 is respectively soldered to the first probe 62 〇 and the second probe 630. The terminal surface bonding component 64 can be a wafer type resistor, so the terminal surface bonding component 64 can be a pole close to the end of the probe probe (t_uation resistor), so the first probe can be excluded. The high frequency reflected wave of the needle 620 and the second probe 63. Specifically, the high frequency probe set may further include at least one third probe core. The fourth probe 660 is connected to the planar conductor 612, and the fourth probe 66 is connected to the plane conductor 612. Connected to the planar conductor embodiment, the 'probe' (four) and the fourth probe Μ are ^ probe or power probe ' and the first probe 62 〇 and the second probe (four) 18 1314651 All of them are signal probes, so they can form a GSSG stripline probe structure. The above is only a preferred embodiment of the present invention, and is not a limitation of the present invention. The invention has been described above by way of a preferred example, and is not intended to limit the invention. Any one skilled in the art can make a few changes or modifications to the above-described technical contents without departing from the scope of the present invention. Equivalent embodiments, but any single modifications, equivalent changes and modifications made to the above embodiments in accordance with the technical spirit of the present invention are still within the scope of the technical solutions of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a high frequency probe set suitable for body circuit testing according to a first embodiment of the present invention. FIG. 2 is a second embodiment of the present invention, A perspective view of a high frequency probe set suitable for testing the integrated circuit. Fig. 3 is a perspective view of another high frequency probe set suitable for integrated circuit testing according to a third embodiment of the present invention. Figure: is a perspective view of another high frequency probe set suitable for integrated circuit testing according to a fourth embodiment of the present invention. Figure S: According to a fifth embodiment of the present invention, another suitable application of the Zhao circuit test A schematic view of a high-frequency probe set according to a sixth embodiment of the present invention, another schematic diagram of a vertical probe for a high-frequency probe set suitable for integrated circuit testing.简体于于于19 1314651 Figure 7: A perspective view of another high frequency probe set suitable for integrated circuit testing in accordance with a seventh embodiment of the present invention. Figure 8: A schematic diagram of another embodiment of a high frequency probe set suitable for integrated circuit testing. FIG. 9 is a diagram showing another high frequency suitable for integrated circuit testing according to the ninth embodiment of the present invention. A perspective view of a probe set. Fig. 1: A perspective view of another high frequency probe set suitable for integrated circuit testing in accordance with a tenth embodiment of the present invention.
【主要元件符號說明】 100 高頻探針組 110 基材 111 絕緣介電材料 120 第一探針 121 第一探觸端 130 第二探針 131 第二探觸端 140 終表面接合元件 141 第一電極端 142 第二電極端 150 第三探針 200 高頻探針組 210 基材 211 絕緣介電材料 220 第一探針 221 第一探觸端 230 第二探針 231 第二探觸端 240 終端表面接合元件 241 第一電極端 242 第二電極端 250 第三探針 260 第四探針 300 高頻探針組 112外殼導體 212外殼導體 20 基材 311 絕緣介電層 312 平 面 導體 平面 導體 第一 探針 321 第一探觸端 第二 探針 331 第二探觸端 終端 表面接合元件 第一 電極端 342 第二電極端 第三 探針 向頻 探針組 基材 411 絕緣介電層 412 平 面 導體 平面 導體 第一 探針 421 第一探觸端 第二 探針 431 第二探觸端 終端 表面接合元件 第一 電極端 442 第二電極端 第三 探針 460 第四探針 向頻 探針組 基材 511 絕緣介電層 5 12 平 面 導體 平面 導體 第一 探針 521 第一探觸端 第二 探針 531 第二探觸端 終端 表面接 合元件 第一 電極端 542 第二電極端 高頻 探針紐 基材 611 絕緣介電層 612 平 面 導體 21 1314651 613平面導體 620第一探針 621 630第二探針 631 640終端表面接合元件 641第一電極端 642 650第三探針 660 第一探觸端 第二探觸端 第二電極端 第四探針[Main component symbol description] 100 high frequency probe set 110 substrate 111 insulating dielectric material 120 first probe 121 first probe end 130 second probe 131 second probe end 140 final surface joint element 141 first Electrode end 142 second electrode end 150 third probe 200 high frequency probe set 210 substrate 211 insulating dielectric material 220 first probe 221 first probe end 230 second probe 231 second probe end 240 terminal Surface bonding element 241 first electrode end 242 second electrode end 250 third probe 260 fourth probe 300 high frequency probe set 112 outer casing conductor 212 outer casing conductor 20 substrate 311 insulating dielectric layer 312 planar conductor planar conductor first Probe 321 first probe end second probe 331 second probe end terminal surface engaging element first electrode end 342 second electrode end third probe radial probe set substrate 411 insulating dielectric layer 412 planar conductor Planar conductor first probe 421 first probe end second probe 431 second probe end terminal surface engaging element First electrode end 442 second electrode end third probe 460 fourth probe frequency probe set substrate 511 insulating dielectric layer 5 12 planar conductor planar conductor first probe 521 first probe end second probe 531 second probe end surface surface engaging element first electrode end 542 second electrode end high frequency probe blank substrate 611 insulating dielectric layer 612 planar conductor 21 1314651 613 planar conductor 620 first probe 621 630 second probe 631 640 terminal surface engaging element 641 first electrode end 642 650 third probe 660 first probe end second probe end second electrode end fourth probe
22twenty two