TWI393517B - Method for manufacturing metal substrate - Google Patents
Method for manufacturing metal substrate Download PDFInfo
- Publication number
- TWI393517B TWI393517B TW099114222A TW99114222A TWI393517B TW I393517 B TWI393517 B TW I393517B TW 099114222 A TW099114222 A TW 099114222A TW 99114222 A TW99114222 A TW 99114222A TW I393517 B TWI393517 B TW I393517B
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- hole
- resin
- metal plate
- metal substrate
- Prior art date
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 100
- 239000002184 metal Substances 0.000 title claims description 100
- 239000000758 substrate Substances 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000011347 resin Substances 0.000 claims description 68
- 229920005989 resin Polymers 0.000 claims description 68
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 25
- 239000011889 copper foil Substances 0.000 claims description 18
- 239000011888 foil Substances 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 description 7
- 238000005553 drilling Methods 0.000 description 6
- 238000005429 filling process Methods 0.000 description 6
- 239000003292 glue Substances 0.000 description 6
- 239000004744 fabric Substances 0.000 description 5
- 239000002657 fibrous material Substances 0.000 description 5
- 239000003365 glass fiber Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011342 resin composition Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- -1 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 239000005995 Aluminium silicate Substances 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 239000012745 toughening agent Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
- H05K3/4608—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated comprising an electrically conductive base or core
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
- B32B15/092—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising epoxy resins
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- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
- B32B37/1009—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure using vacuum and fluid pressure
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- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/10—Inorganic fibres
- B32B2262/101—Glass fibres
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Description
本發明係關於一種金屬基板之製造方法，尤指一種可減少基板填孔製程中通孔內殘留空洞之金屬基板製造方法。
近年來，發光二極體之照明及背光技術已逐漸發展成熟，且其相關產品也開始普及。目前已知發光二極體於產生亮光之同時會伴隨產生大量的熱能，此時熱能若無法有效由發光二極體排出，將會降低發光二極體之發光效率。對此，傳統之印刷電路板由於熱傳導率不高，已逐漸不敷散熱需求高之發光二極體之基板所需，因此使用散熱效率較高之金屬基板或金屬核(芯)基板為較佳之選擇。
一般而言，金屬基板之結構主要含有一金屬板，其表面依序覆蓋有絕緣材料及銅箔，且其可製作為單面或雙面板。目前於製作雙面金屬基板時，需進行鑽孔、填孔、二次鑽孔及電鍍等步驟，其主要係先藉由機械或雷射方式形成貫穿金屬基板之第一通孔，並以絶緣樹脂或絶緣導熱樹脂填孔，於樹脂烘烤固化後，再鑽一孔徑較小之第二通孔，最後於第二通孔中填入導電物質或利用電鍍形成導電層，以達到雙面之導電線路相連接。
如前所述，於習知技術之填孔製程中大多先使用填孔膠填入通孔，然而，由於通孔之孔徑較大且毛細現象較弱，常造成填孔膠於烘烤固化時部份膠體流出通孔，使得通孔無法有效填滿，導致後續製程中形成空洞(void)或凹陷，對電路板之可靠度及品質帶來極大影響。
為減少空洞之形成，現有技術中亦有採用半固化膠片(prepreg)或樹脂膜(film)配合銅箔，或利用背膠銅箔(resin coated copper(RCC) foil)透過壓合而完成填孔者。然而，此等填孔製程之結果仍令人不甚滿意。
於目前使用半固化膠片之填孔製程中，係將半固化膠片上下層疊於金屬板之兩側，之後再於半固化膠片外側層疊銅箔，並將疊合之各層結構於真空、高溫、高壓條件下壓合，使得半固化膠片之樹脂填入金屬板之通孔中。然而，由於一般半固化膠片係使用含浸樹脂之玻璃纖維布，其玻璃纖維布密度高，樹脂含量僅為40~80%，不足以填滿金屬板中之通孔。此外，樹脂於流動時會受玻璃纖維布阻礙而造成流動性較差，使得通孔結構中之樹脂無法填滿而殘留空洞。
於目前使用背膠銅箔之填孔製程中，係將已塗佈有樹脂膠之背膠銅箔上下層疊於金屬板之兩側直接取代半固化膠片及銅箔，並與金屬板壓合以使背膠銅箔之樹脂填入金屬板之通孔中。惟此技術與半固化膠片技術之結果相同，仍會造成空洞於通孔結構中。
於目前使用樹脂膜之填孔製程中，係使用樹脂膜取代半固化膠片，上下層疊於金屬板之兩側後，與銅箔及金屬板一起壓合。然而，由於樹脂膜不具有纖維材料，壓合後之支撐性不足，故通孔結構中之樹脂層會存在空洞，且通孔上下方之銅箔及樹脂層亦會產生凹陷現象，形成表面平坦度不佳，而影響後續線路製程的良率。
有鑑於前述先前技術中存在之問題，如何提供一種金屬基板之製造方法，其可達到良好之機械強度且減少通孔結構中樹脂層產生空洞或凹陷之問題，並進一步提高所製成之金屬基板的電氣及加工特性，將是本發明所欲積極揭露之處。
本發明之主要目的之一在於提供一種金屬基板之製造方法，其藉著同時使用半固化膠片(prepreg)及樹脂膜(film)作為絕緣材料，可達到增加機械強度，且減少通孔結構中樹脂產生空洞之目的。
為達上述目的，本發明提供一種金屬基板之製造方法，其包含：(1)提供一具有第一通孔之金屬板；(2)於該金屬板之至少一面上形成一層疊結構，該層疊結構於靠近該金屬板之一側依序包含一樹脂膜層、一半固化膠片層及一金屬箔層；以及(3)壓合該金屬板及該層疊結構。
此外，本發明亦提供一種金屬基板，其包含一金屬板及一形成於該金屬板表面之層疊結構，該金屬板包含一第一通孔，該層疊結構於靠近該金屬板之一側依序包含一樹脂膜層、一半固化膠片層及一金屬箔層。
於上述之方法或金屬基板中，半固化膠片可為絕緣紙、玻璃纖維、碳纖維或其他纖維材料含浸於樹脂組成(varnish)後烘烤加熱所得之膠片。
於上述之方法或金屬基板中，樹脂膜係指樹脂膠塗佈於離型膜(如PET)上，直接加熱形成半固化狀態後再移除離型膜所得者，其與半固化膠片之主要不同在於樹脂膜不具有纖維材料。此外，半固化膠片及樹脂膜之樹脂組成材料可選自環氧樹脂、酚醛樹脂、聚醯亞胺樹脂、聚苯醚樹脂、聚酯樹脂、氰酸酯樹脂、聚四氟乙烯樹脂、ABF(Ajinomoto Build-up Film)及BT樹脂(bismaleimide triazine)之其中一者或其組合。
此外，為了增加半固化膠片與樹脂膜之熱傳導率，該樹脂組成可進一步包含無機填充物，該無機填充物可為二氧化矽(熔融態或非熔融態)、氧化鋁、氧化鎂、氫氧化鎂、碳酸鈣、滑石、黏土、氮化鋁、氮化硼、氫氧化鋁、碳化鋁矽、碳化矽、碳酸鈉、二氧化鈦、氧化鋅、氧化鋯、石英、鑽石粉、類鑽石粉、石墨或煅燒高嶺土之至少一者或其組合，該無機填充物之熱傳導率高於樹脂材料，可有效提升所述樹脂組成之熱傳導率。此外，該樹脂組成亦可進一步包含介面活性劑、增韌劑、硬化促進劑或溶劑等添加物。
於上述之方法或金屬基板中，金屬板可包含銅、鋁、不鏽鋼、鎂、鎳、鈦或其合金，金屬箔層可包含銅箔。
於上述之方法或金屬基板中，第一通孔之孔徑可為0.4至1.6mm，金屬基板之厚度可為0.3至3mm。
於上述之方法中，較佳係可選擇性進行以下步驟：形成一貫穿該層疊結構與該金屬板之第二通孔，該第二通孔之孔徑小於該第一通孔；於該第二通孔內形成一金屬導電層；或將該金屬箔層製成一線路。
其中，第二通孔係可利用機械鑽孔或雷射鑽孔形成；金屬導電層係可利用電鍍法形成；而線路係可利用微影蝕刻製程形成。
藉此，本發明之金屬基板製造方法係透過同時使用半固化膠片及樹脂膜作為絕緣材料，進而達到良好機械強度，且減少通孔結構中之樹脂產生空洞，並可進一步提高金屬基板於印刷電路製程中之加工良率。
為充分瞭解本發明之目的、特徵及功效，茲藉由下述具體之實施例並配合所附之圖式對本發明做一詳細說明如後。
於本發明中，金屬基板係指表面依序覆蓋有絕緣材料及金屬箔層之金屬板經壓合後所得之結構，因此，金屬核層合板(metal-core laminate)與金屬核電路板(metal-core PCB)均屬於本發明之金屬基板的態樣之一，且並不以此為限。金屬板之材料可為鋁、銅、不鏽鋼、鎂、鎳、鈦等金屬或其合金。此外，於本發明中，通孔係指一種貫穿之孔洞，其可依不同之製程而進一步成為盲孔、埋孔等。
請參閱第1圖，其係本發明之金屬基板製造方法一較佳具體實施例的剖面示意圖，其中第1A圖至第1F圖分別顯示各階段之製造步驟。
首先，如第1A圖所示，提供一具有第一通孔5之金屬板1。該第一通孔5之孔徑可為0.4至1.6mm；金屬板1之材質可為鋁、銅、不鏽鋼、鎂、鎳、鈦等金屬或其合金，或任何一種可應用於金屬核電路板(metal-core PCB)之金屬核心(metal core)者。此外，於該金屬板1上下兩側係依序提供樹脂膜2、半固化膠片3及銅箔4。
樹脂膜2之樹脂組成材料係可選自環氧樹脂、酚醛樹脂、聚醯亞胺樹脂、聚苯醚樹脂、聚酯樹脂、氰酸酯樹脂、聚四氟乙烯樹脂、ABF(Ajinomoto Build-up Film)及BT樹脂(Bismaleimide Triazine)之其中一者或其組合。
半固化膠片3可為絕緣紙、玻璃纖維、碳纖維或其他纖維材料含浸於樹脂組成後烘烤加熱所得之膠片，且其含浸之樹脂組成材料可與樹脂膜2相同或不同。
第1B圖顯示各層結構於壓合前之狀況，其包含金屬板1及一層疊結構，該層疊結構包括樹脂膜層2、半固化膠片層3及銅箔層4。於真空、高溫、高壓下，壓合上述金屬板1及該層疊結構，即可形成第1C圖所示之金屬基板。
此外，本發明可重複提供金屬板及層疊結構之步驟以形成多層電路板。金屬板1與層疊結構於壓合時，樹脂膜2及/或半固化膠片3中之樹脂膠可填充於第一通孔5中。其中壓合條件之溫度範圍可為70℃~300℃，升溫速度可大於2℃/min，壓力可大於20kg/cm2
。
第1C圖顯示各層結構於真空、高溫、高壓下壓合後之狀況，其中，高溫的目的在於加熱半固化膠片3及/或樹脂膜2，使其樹脂液化並具有流動性，以填充於第一通孔內。經壓合後，樹脂膜2及/或半固化膠片3中之樹脂膠已填充於第一通孔中之部分或全部，形成通孔結構中之樹脂層51。
第1D圖顯示進行第二通孔6之製作步驟，該第二通孔6之孔徑小於該第一通孔，且製作步驟係以機械鑽孔或雷射鑽孔方式進行。
第1E圖顯示於該第二通孔之孔壁上電鍍一金屬導電層7，以完成上下層電路之導通。
第1F圖顯示於該銅箔層4上，以微影蝕刻製程製作導電線路，即利用蝕刻移除部分線路，留下之銅線路形成設計之線路。
最後，請參見第2圖，其中第2A圖係為習知技術所得結構之剖面圖，習知技術僅使用樹脂膜做為積層板之絕緣材料，由於樹脂膜不具有纖維材料，壓合後之支撐性不足，通孔結構中之樹脂層會存在多處空洞8，通孔上下方之銅箔及樹脂層亦產生凹陷9現象，形成表面平坦度不佳，將影響後續線路製程的良率。另一方面，第2B圖係為本發明之較佳具體實施例所得結構之剖面圖，其中陰影部分為玻璃纖維布10。由第2B圖可以發現，本發明藉著同時使用半固化膠片及樹脂膜作為積層板之絕緣材料，可大幅減少習知技術所產生於通孔結構中之空洞及凹陷現象，且具有良好機械強度，並達到進一步提高金屬基板之印刷電路等加工良率之目的。
如上所述，本發明完全符合專利三要件：新穎性、進步性和產業利用性。以新穎性和進步性而言，本發明係藉由同時使用半固化膠片及樹脂膜作為金屬基板之絕緣材料，進而達到良好機械強度，且減少通孔結構中之樹脂層產生空洞；並達到進一步提高金屬基板之印刷電路等加工良率之目的；就產業利用性而言，利用本發明所衍生的產品，當可充分滿足目前市場的需求。
本發明在上文中已以較佳實施例揭露，然本領域具有通常知識者應理解的是，該實施例僅用於描述本發明，而不應解讀為限制本發明之範圍。應注意的是，舉凡與該實施例等效之變化與置換，均應視為涵蓋於本發明之範疇內。因此，本發明之保護範圍當以下文之申請專利範圍所界定者為準。
1．．．金屬板
2‧‧‧樹脂膜
3‧‧‧半固化膠片
4‧‧‧銅箔
5‧‧‧第一通孔
51‧‧‧通孔結構中之樹脂層
6‧‧‧第二通孔
7‧‧‧金屬導電層
8‧‧‧空洞
9‧‧‧凹陷
10‧‧‧玻璃纖維布
第1A圖至第1F圖為本發明之較佳具體實施例之剖面示意圖。
第2A圖為習知技術所得結構之剖面圖。
第2B圖為本發明之較佳具體實施例所得結構之剖面圖。
1．．．金屬板
2．．．樹脂膜
3．．．半固化膠片
4．．．銅箔
7．．．金屬導電層
Claims (11)
- 一種金屬基板之製造方法，包含：提供一具有第一通孔之金屬板；於該金屬板之二面上均形成一層疊結構，該層疊結構於靠近該金屬板之一側依序包含一樹脂膜層、一半固化膠片層及一金屬箔層；以及壓合該金屬板及該層疊結構。
- 如申請專利範圍第1項所述之方法，其中該金屬板包含銅、鋁、不鏽鋼、鎂、鎳、鈦或其合金，且該金屬箔層包含銅箔。
- 如申請專利範圍第1或2項所述之方法，更包含：形成一貫穿該層疊結構與該金屬板之第二通孔，該第二通孔之孔徑小於該第一通孔。
- 如申請專利範圍第3項所述之方法，更包含：於該第二通孔內形成一金屬導電層。
- 如申請專利範圍第4項所述之方法，更包含：將該金屬箔層製成一線路。
- 一種金屬基板，包含一金屬板及一層疊結構形成於該金屬板之二面，該金屬板包含一第一通孔，該層疊結構於靠近該金屬板之一側依序包含一樹脂膜層、一半固化膠片層及一金屬箔層。
- 如申請專利範圍第6項所述之金屬基板，其中該金屬板包含銅、鋁、不鏽鋼、鎂、鎳、鈦或其合金，且該金屬箔層包含銅箔。
- 如申請專利範圍第6項所述之金屬基板，其中該第一通孔之至少一部分係為該樹脂膜層之樹脂所填充。
- 如申請專利範圍第8項所述之金屬基板，更包含一第二通孔，其貫穿該層疊結構與該第一通孔內之樹脂。
- 如申請專利範圍第9項所述之金屬基板，其中該第二通孔之孔壁表面係為導電材料所覆蓋。
- 如申請專利範圍第6至10項中任一項所述之金屬基板，其中該金屬箔層係具有線路。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099114222A TWI393517B (zh) | 2010-05-04 | 2010-05-04 | Method for manufacturing metal substrate |
| US13/098,921 US20110274877A1 (en) | 2010-05-04 | 2011-05-02 | Method for manufacturing metal base laminate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099114222A TWI393517B (zh) | 2010-05-04 | 2010-05-04 | Method for manufacturing metal substrate |
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| Publication Number | Publication Date |
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| TW201141343A TW201141343A (en) | 2011-11-16 |
| TWI393517B true TWI393517B (zh) | 2013-04-11 |
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| TW099114222A TWI393517B (zh) | 2010-05-04 | 2010-05-04 | Method for manufacturing metal substrate |
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| US (1) | US20110274877A1 (zh) |
| TW (1) | TWI393517B (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2880662B1 (de) * | 2012-07-30 | 2017-06-28 | CeramTec GmbH | Verfahren zur metallisierung von durchkontaktierungen |
| CN103781273A (zh) * | 2012-10-19 | 2014-05-07 | 深南电路有限公司 | 嵌入式金属基pcb板及其加工方法 |
| KR101420543B1 (ko) * | 2012-12-31 | 2014-08-13 | 삼성전기주식회사 | 다층기판 |
| TWI607824B (zh) * | 2013-03-27 | 2017-12-11 | 三菱瓦斯化學股份有限公司 | 纖維強化複合材或金屬之切削加工用進入引導片及該切削加工方法、貫通孔、纖維強化複合材之製造方法及金屬之製造方法 |
| TWI726567B (zh) * | 2020-01-03 | 2021-05-01 | 瑩耀科技股份有限公司 | 發光元件散熱結構及其製作方法 |
| CN113079645B (zh) * | 2021-03-30 | 2023-01-24 | 上海大学 | 一种夹心铝基印制线路板压合方法 |
| CN113301715A (zh) * | 2021-04-01 | 2021-08-24 | 珠海精路电子有限公司 | 电路板及其制造工艺 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03211891A (ja) * | 1990-01-17 | 1991-09-17 | Sumitomo Bakelite Co Ltd | 銅張積層板の製造方法 |
| JPH0444290A (ja) * | 1990-06-08 | 1992-02-14 | Yokohama Rubber Co Ltd:The | プリント配線基板の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6192849A (ja) * | 1984-10-12 | 1986-05-10 | 松下電工株式会社 | 金属ベ−スプリント配線板用積層板の製造法 |
| JPH03249A (ja) * | 1989-05-26 | 1991-01-07 | Matsushita Electric Works Ltd | 電気積層板の製造方法 |
| JP3969477B2 (ja) * | 2002-04-18 | 2007-09-05 | 三菱電機株式会社 | 積層配線基板およびその製造方法 |
| JP2009200299A (ja) * | 2008-02-22 | 2009-09-03 | Furukawa Electric Co Ltd:The | 金属コアプリント配線板の製造方法、及びこれに用いられる部品 |
-
2010
- 2010-05-04 TW TW099114222A patent/TWI393517B/zh active
-
2011
- 2011-05-02 US US13/098,921 patent/US20110274877A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03211891A (ja) * | 1990-01-17 | 1991-09-17 | Sumitomo Bakelite Co Ltd | 銅張積層板の製造方法 |
| JPH0444290A (ja) * | 1990-06-08 | 1992-02-14 | Yokohama Rubber Co Ltd:The | プリント配線基板の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201141343A (en) | 2011-11-16 |
| US20110274877A1 (en) | 2011-11-10 |
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