TWI393186B - 用以安排金屬沈積用之基板表面的方法及整合之系統 - Google Patents

用以安排金屬沈積用之基板表面的方法及整合之系統 Download PDF

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Publication number
TWI393186B
TWI393186B TW96131990A TW96131990A TWI393186B TW I393186 B TWI393186 B TW I393186B TW 96131990 A TW96131990 A TW 96131990A TW 96131990 A TW96131990 A TW 96131990A TW I393186 B TWI393186 B TW I393186B
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Taiwan
Prior art keywords
substrate
copper
metal
vacuum
layer
Prior art date
Application number
TW96131990A
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English (en)
Chinese (zh)
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TW200832556A (en
Inventor
多迪 葉斯帝
瑞德克 佛禮茲Ｃ
柏依 約翰
尤 威廉
阿瑞那吉拉 第瑞區若巴里
豪瓦德 亞瑟Ｍ
亞歷山得 優 楊格蘇克
維湯曼 喬漢
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蘭姆研究公司
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Publication date
Priority claimed from US11/513,634 external-priority patent/US8771804B2/en
Priority claimed from US11/514,038 external-priority patent/US8241701B2/en
Priority claimed from US11/513,446 external-priority patent/US8747960B2/en
Application filed by 蘭姆研究公司 filed Critical 蘭姆研究公司
Publication of TW200832556A publication Critical patent/TW200832556A/zh
Application granted granted Critical
Publication of TWI393186B publication Critical patent/TWI393186B/zh

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
TW96131990A 2006-08-30 2007-08-29 用以安排金屬沈積用之基板表面的方法及整合之系統 TWI393186B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/513,634 US8771804B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a copper surface for selective metal deposition
US11/514,038 US8241701B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a barrier surface for copper deposition
US11/513,446 US8747960B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide

Publications (2)

Publication Number Publication Date
TW200832556A TW200832556A (en) 2008-08-01
TWI393186B true TWI393186B (zh) 2013-04-11

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TW96131990A TWI393186B (zh) 2006-08-30 2007-08-29 用以安排金屬沈積用之基板表面的方法及整合之系統

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JP (2) JP5489717B2 (enExample)
CN (2) CN101558186B (enExample)
MY (2) MY171542A (enExample)
SG (1) SG174752A1 (enExample)
TW (1) TWI393186B (enExample)

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CN102468265A (zh) * 2010-11-01 2012-05-23 中芯国际集成电路制造(上海)有限公司 连接插塞及其制作方法
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
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US9040385B2 (en) 2013-07-24 2015-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for cleaning substrate surface for hybrid bonding
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JP2017520109A (ja) * 2014-06-16 2017-07-20 インテル・コーポレーション 集積回路デバイスの金属間の選択的な拡散障壁
US9997405B2 (en) * 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9768060B2 (en) * 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
JP6998945B2 (ja) 2016-10-02 2022-01-18 アプライド マテリアルズ インコーポレイテッド ルテニウムライナーと共に銅のエレクトロマイグレーションを改善するドープされた選択的な金属キャップ
JP6842159B2 (ja) * 2016-12-13 2021-03-17 サムコ株式会社 プラズマ処理方法
US10438846B2 (en) 2017-11-28 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition process for semiconductor interconnection structures
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
KR102828798B1 (ko) 2018-12-05 2025-07-02 램 리써치 코포레이션 보이드 프리 (void free) 저응력 (low stress) 충진
KR102301933B1 (ko) * 2018-12-26 2021-09-15 한양대학교 에리카산학협력단 반도체 소자의 제조 방법
US12261081B2 (en) 2019-02-13 2025-03-25 Lam Research Corporation Tungsten feature fill with inhibition control
TWI864099B (zh) * 2019-09-25 2024-12-01 日商東京威力科創股份有限公司 基板液處理方法及基板液處理裝置
US11555250B2 (en) * 2020-04-29 2023-01-17 Applied Materials, Inc. Organic contamination free surface machining
CN115867695A (zh) * 2020-05-08 2023-03-28 朗姆研究公司 电镀钴、镍及其合金
US20220375751A1 (en) * 2021-05-24 2022-11-24 Applied Materials, Inc. Integrated epitaxy and preclean system
CN115394911B (zh) * 2022-06-06 2025-10-03 昕原半导体(杭州)有限公司 阻变式存储器的下电极及制备方法
CN120376473B (zh) * 2025-06-26 2025-09-23 昆山科比精工设备有限公司 一种硅片镀铜前处理用转运装置

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Also Published As

Publication number Publication date
SG174752A1 (en) 2011-10-28
CN101558186B (zh) 2015-01-14
CN101558186A (zh) 2009-10-14
JP5489717B2 (ja) 2014-05-14
CN103107120B (zh) 2016-06-08
CN103107120A (zh) 2013-05-15
JP5820870B2 (ja) 2015-11-24
JP2014099627A (ja) 2014-05-29
MY148605A (en) 2013-05-15
JP2010503205A (ja) 2010-01-28
MY171542A (en) 2019-10-17
TW200832556A (en) 2008-08-01

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