MY171542A - Processes and integrated systems for engineering a substrate surface for metal deposition - Google Patents

Processes and integrated systems for engineering a substrate surface for metal deposition

Info

Publication number
MY171542A
MY171542A MYPI2012004997A MYPI2012004997A MY171542A MY 171542 A MY171542 A MY 171542A MY PI2012004997 A MYPI2012004997 A MY PI2012004997A MY PI2012004997 A MYPI2012004997 A MY PI2012004997A MY 171542 A MY171542 A MY 171542A
Authority
MY
Malaysia
Prior art keywords
metal
substrate surface
copper
integrated system
processes
Prior art date
Application number
MYPI2012004997A
Other languages
English (en)
Inventor
William Thie
Boyd John
Tiruchirapalli Arunagiri
Fritz C Redeker
Yezdi Dordi
Arthur M Howald
Hyungsuk Alexander Yoon
Johan Vertommen
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/513,634 external-priority patent/US8771804B2/en
Priority claimed from US11/513,446 external-priority patent/US8747960B2/en
Priority claimed from US11/514,038 external-priority patent/US8241701B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of MY171542A publication Critical patent/MY171542A/en

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
MYPI2012004997A 2006-08-30 2007-08-17 Processes and integrated systems for engineering a substrate surface for metal deposition MY171542A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/513,634 US8771804B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a copper surface for selective metal deposition
US11/513,446 US8747960B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a silicon-type surface for selective metal deposition to form a metal silicide
US11/514,038 US8241701B2 (en) 2005-08-31 2006-08-30 Processes and systems for engineering a barrier surface for copper deposition

Publications (1)

Publication Number Publication Date
MY171542A true MY171542A (en) 2019-10-17

Family

ID=41202298

Family Applications (2)

Application Number Title Priority Date Filing Date
MYPI2012004997A MY171542A (en) 2006-08-30 2007-08-17 Processes and integrated systems for engineering a substrate surface for metal deposition
MYPI20090714 MY148605A (en) 2006-08-30 2007-08-17 Processes and integrated systems for engineering a substrate surface for metal deposition

Family Applications After (1)

Application Number Title Priority Date Filing Date
MYPI20090714 MY148605A (en) 2006-08-30 2007-08-17 Processes and integrated systems for engineering a substrate surface for metal deposition

Country Status (5)

Country Link
JP (2) JP5489717B2 (enExample)
CN (2) CN101558186B (enExample)
MY (2) MY171542A (enExample)
SG (1) SG174752A1 (enExample)
TW (1) TWI393186B (enExample)

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US20090269507A1 (en) * 2008-04-29 2009-10-29 Sang-Ho Yu Selective cobalt deposition on copper surfaces
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US8227344B2 (en) * 2010-02-26 2012-07-24 Tokyo Electron Limited Hybrid in-situ dry cleaning of oxidized surface layers
JP5560144B2 (ja) * 2010-08-31 2014-07-23 東京エレクトロン株式会社 半導体装置の製造方法
JP2012054306A (ja) * 2010-08-31 2012-03-15 Tokyo Electron Ltd 半導体装置の製造方法
WO2012029475A1 (ja) * 2010-08-31 2012-03-08 東京エレクトロン株式会社 半導体装置の製造方法
CN102468265A (zh) * 2010-11-01 2012-05-23 中芯国际集成电路制造(上海)有限公司 连接插塞及其制作方法
US11437269B2 (en) 2012-03-27 2022-09-06 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US8603913B1 (en) * 2012-12-20 2013-12-10 Lam Research Corporation Porous dielectrics K value restoration by thermal treatment and or solvent treatment
US9040385B2 (en) * 2013-07-24 2015-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for cleaning substrate surface for hybrid bonding
CN105682856A (zh) * 2013-10-22 2016-06-15 东曹Smd有限公司 经优化的纹理化表面及优化的方法
EP3155655B1 (en) * 2014-06-16 2021-05-12 Intel Corporation Selective diffusion barrier between metals of an integrated circuit device
US9997405B2 (en) * 2014-09-30 2018-06-12 Lam Research Corporation Feature fill with nucleation inhibition
US9768060B2 (en) * 2014-10-29 2017-09-19 Applied Materials, Inc. Systems and methods for electrochemical deposition on a workpiece including removing contamination from seed layer surface prior to ECD
CN109844930B (zh) * 2016-10-02 2024-03-08 应用材料公司 以钌衬垫改善铜电迁移的经掺杂选择性金属覆盖
JP6842159B2 (ja) * 2016-12-13 2021-03-17 サムコ株式会社 プラズマ処理方法
US10438846B2 (en) 2017-11-28 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition process for semiconductor interconnection structures
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法
SG11202106002VA (en) 2018-12-05 2021-07-29 Lam Res Corp Void free low stress fill
KR102301933B1 (ko) * 2018-12-26 2021-09-15 한양대학교 에리카산학협력단 반도체 소자의 제조 방법
US12261081B2 (en) 2019-02-13 2025-03-25 Lam Research Corporation Tungsten feature fill with inhibition control
US20220344205A1 (en) * 2019-09-25 2022-10-27 Tokyo Electron Limited Substrate liquid processing method and substate liquid processing apparatus
US11555250B2 (en) * 2020-04-29 2023-01-17 Applied Materials, Inc. Organic contamination free surface machining
KR20230008822A (ko) * 2020-05-08 2023-01-16 램 리써치 코포레이션 코발트, 니켈 및 이의 합금들의 전기 도금
US20220375751A1 (en) * 2021-05-24 2022-11-24 Applied Materials, Inc. Integrated epitaxy and preclean system
CN115394911B (zh) * 2022-06-06 2025-10-03 昕原半导体(杭州)有限公司 阻变式存储器的下电极及制备方法
CN120376473B (zh) * 2025-06-26 2025-09-23 昆山科比精工设备有限公司 一种硅片镀铜前处理用转运装置

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Also Published As

Publication number Publication date
CN101558186A (zh) 2009-10-14
CN103107120A (zh) 2013-05-15
SG174752A1 (en) 2011-10-28
JP2014099627A (ja) 2014-05-29
TWI393186B (zh) 2013-04-11
JP2010503205A (ja) 2010-01-28
CN103107120B (zh) 2016-06-08
CN101558186B (zh) 2015-01-14
JP5489717B2 (ja) 2014-05-14
TW200832556A (en) 2008-08-01
MY148605A (en) 2013-05-15
JP5820870B2 (ja) 2015-11-24

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