TWI391943B - 半導體記憶體裝置 - Google Patents

半導體記憶體裝置 Download PDF

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Publication number
TWI391943B
TWI391943B TW097134022A TW97134022A TWI391943B TW I391943 B TWI391943 B TW I391943B TW 097134022 A TW097134022 A TW 097134022A TW 97134022 A TW97134022 A TW 97134022A TW I391943 B TWI391943 B TW I391943B
Authority
TW
Taiwan
Prior art keywords
input
output
line
output line
control signal
Prior art date
Application number
TW097134022A
Other languages
English (en)
Chinese (zh)
Other versions
TW200917271A (en
Inventor
Kang-Seol Lee
Eun-Souk Lee
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200917271A publication Critical patent/TW200917271A/zh
Application granted granted Critical
Publication of TWI391943B publication Critical patent/TWI391943B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
TW097134022A 2007-09-04 2008-09-04 半導體記憶體裝置 TWI391943B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20070089644 2007-09-04
KR1020080083862A KR100937938B1 (ko) 2007-09-04 2008-08-27 반도체 메모리 장치

Publications (2)

Publication Number Publication Date
TW200917271A TW200917271A (en) 2009-04-16
TWI391943B true TWI391943B (zh) 2013-04-01

Family

ID=40462963

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097134022A TWI391943B (zh) 2007-09-04 2008-09-04 半導體記憶體裝置

Country Status (3)

Country Link
KR (1) KR100937938B1 (ko)
CN (1) CN101383181B (ko)
TW (1) TWI391943B (ko)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6154404A (en) * 1998-07-23 2000-11-28 Samsung Electronics Co., Ltd. Integrated circuit memory devices having sense amplifier driver circuits therein that improve writing efficiency
US20050082572A1 (en) * 2002-02-20 2005-04-21 Shinya Miyazaki Semiconductor integrated circuit
US20050232042A1 (en) * 2004-04-20 2005-10-20 Kim Kyoung-Nam BLEQ driving circuit in semiconductor memory device
US7002862B2 (en) * 2003-05-30 2006-02-21 Hynix Semiconductor Inc. Semiconductor memory device with sense amplifier driver having multiplied output lines
US20070183235A1 (en) * 2006-02-07 2007-08-09 Hynix Semiconductor Inc. Semiconductor memory apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100224667B1 (ko) * 1996-12-10 1999-10-15 윤종용 계층적 입출력라인 구조를 갖는 반도체 메모리장치 및 이의 배치방법
JP2000090682A (ja) * 1998-09-10 2000-03-31 Toshiba Corp 半導体記憶装置
JP4553504B2 (ja) * 2001-03-12 2010-09-29 富士通セミコンダクター株式会社 マルチプレクサ並びにこれを用いたメモリ回路及び半導体装置
CN1933015A (zh) * 2005-09-13 2007-03-21 株式会社瑞萨科技 半导体集成电路器件
KR20080061954A (ko) * 2006-12-28 2008-07-03 주식회사 하이닉스반도체 반도체 메모리 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6154404A (en) * 1998-07-23 2000-11-28 Samsung Electronics Co., Ltd. Integrated circuit memory devices having sense amplifier driver circuits therein that improve writing efficiency
US20050082572A1 (en) * 2002-02-20 2005-04-21 Shinya Miyazaki Semiconductor integrated circuit
US7002862B2 (en) * 2003-05-30 2006-02-21 Hynix Semiconductor Inc. Semiconductor memory device with sense amplifier driver having multiplied output lines
US20050232042A1 (en) * 2004-04-20 2005-10-20 Kim Kyoung-Nam BLEQ driving circuit in semiconductor memory device
US20070183235A1 (en) * 2006-02-07 2007-08-09 Hynix Semiconductor Inc. Semiconductor memory apparatus

Also Published As

Publication number Publication date
TW200917271A (en) 2009-04-16
KR100937938B1 (ko) 2010-01-21
KR20090024625A (ko) 2009-03-09
CN101383181A (zh) 2009-03-11
CN101383181B (zh) 2012-05-30

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees