TWI386438B - 用於半導體元件之具改良填隙特性的有機矽烷聚合物以及使用該聚合物之塗覆組成物 - Google Patents
用於半導體元件之具改良填隙特性的有機矽烷聚合物以及使用該聚合物之塗覆組成物 Download PDFInfo
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- TWI386438B TWI386438B TW097132713A TW97132713A TWI386438B TW I386438 B TWI386438 B TW I386438B TW 097132713 A TW097132713 A TW 097132713A TW 97132713 A TW97132713 A TW 97132713A TW I386438 B TWI386438 B TW I386438B
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- polymer
- composition
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- Prior art date
Links
- 229920000642 polymer Polymers 0.000 title claims description 67
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000011049 filling Methods 0.000 title description 6
- 239000008199 coating composition Substances 0.000 title description 5
- 150000001282 organosilanes Chemical class 0.000 title 1
- 239000000203 mixture Substances 0.000 claims description 64
- 150000001875 compounds Chemical class 0.000 claims description 30
- 239000000126 substance Substances 0.000 claims description 18
- 239000002904 solvent Substances 0.000 claims description 16
- 239000003431 cross linking reagent Substances 0.000 claims description 13
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 10
- 239000003377 acid catalyst Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 239000004094 surface-active agent Substances 0.000 claims description 8
- 125000003118 aryl group Chemical group 0.000 claims description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- 238000006482 condensation reaction Methods 0.000 claims description 5
- 239000003381 stabilizer Substances 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- 229920000877 Melamine resin Polymers 0.000 claims description 3
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 3
- 238000006068 polycondensation reaction Methods 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 2
- 150000007513 acids Chemical class 0.000 claims description 2
- 150000001298 alcohols Chemical class 0.000 claims description 2
- 150000003997 cyclic ketones Chemical class 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 150000002170 ethers Chemical class 0.000 claims description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 239000011707 mineral Substances 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 150000003460 sulfonic acids Chemical class 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims 4
- 150000008064 anhydrides Chemical class 0.000 claims 2
- SRMJUSXGAMRMDL-UHFFFAOYSA-N 2,2,3,3,4,4-hexaaminohexanoic acid Chemical compound NC(C(C(C(=O)O)(N)N)(N)N)(CC)N SRMJUSXGAMRMDL-UHFFFAOYSA-N 0.000 claims 1
- 239000004202 carbamide Substances 0.000 claims 1
- 150000003672 ureas Chemical class 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 18
- -1 monosubstituted urea Chemical class 0.000 description 14
- 238000003860 storage Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000001723 curing Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- 238000013019 agitation Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 239000011541 reaction mixture Substances 0.000 description 3
- 239000000600 sorbitol Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ANBBCZAIOXDZPV-UHFFFAOYSA-N 1,1,1-trimethoxy-2-methyldecane Chemical compound CC(C(OC)(OC)OC)CCCCCCCC ANBBCZAIOXDZPV-UHFFFAOYSA-N 0.000 description 1
- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- CXBDYQVECUFKRK-UHFFFAOYSA-N 1-methoxybutane Chemical compound CCCCOC CXBDYQVECUFKRK-UHFFFAOYSA-N 0.000 description 1
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- RHDAAWLTXPGJDZ-UHFFFAOYSA-N 2-(ethoxymethyl)butanoic acid Chemical compound CCOCC(CC)C(O)=O RHDAAWLTXPGJDZ-UHFFFAOYSA-N 0.000 description 1
- HXDLWJWIAHWIKI-UHFFFAOYSA-N 2-hydroxyethyl acetate Chemical compound CC(=O)OCCO HXDLWJWIAHWIKI-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- FWVWMJPLMOYNLD-UHFFFAOYSA-N C(C)OC(CCCCCCCCCC(C)CCCCCCCCCC(OCC)(OCC)OCC)(OCC)OCC Chemical compound C(C)OC(CCCCCCCCCC(C)CCCCCCCCCC(OCC)(OCC)OCC)(OCC)OCC FWVWMJPLMOYNLD-UHFFFAOYSA-N 0.000 description 1
- JSGRIFNBTXDZQU-UHFFFAOYSA-N C1(=CC=CC=C1)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C1(=CC=CC=C1)C(C(OC)(OC)OC)CCCCCCCC JSGRIFNBTXDZQU-UHFFFAOYSA-N 0.000 description 1
- 229920003274 CYMEL® 303 LF Polymers 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- IYFATESGLOUGBX-YVNJGZBMSA-N Sorbitan monopalmitate Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O IYFATESGLOUGBX-YVNJGZBMSA-N 0.000 description 1
- HVUMOYIDDBPOLL-XWVZOOPGSA-N Sorbitan monostearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O HVUMOYIDDBPOLL-XWVZOOPGSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000008379 phenol ethers Chemical class 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- ZDYVRSLAEXCVBX-UHFFFAOYSA-N pyridinium p-toluenesulfonate Chemical compound C1=CC=[NH+]C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 ZDYVRSLAEXCVBX-UHFFFAOYSA-N 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000001593 sorbitan monooleate Substances 0.000 description 1
- 235000011069 sorbitan monooleate Nutrition 0.000 description 1
- 229940035049 sorbitan monooleate Drugs 0.000 description 1
- 239000001570 sorbitan monopalmitate Substances 0.000 description 1
- 235000011071 sorbitan monopalmitate Nutrition 0.000 description 1
- 229940031953 sorbitan monopalmitate Drugs 0.000 description 1
- 239000001587 sorbitan monostearate Substances 0.000 description 1
- 235000011076 sorbitan monostearate Nutrition 0.000 description 1
- 229940035048 sorbitan monostearate Drugs 0.000 description 1
- 239000001589 sorbitan tristearate Substances 0.000 description 1
- 235000011078 sorbitan tristearate Nutrition 0.000 description 1
- 229960004129 sorbitan tristearate Drugs 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
- C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Silicon Polymers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070090677A KR100894417B1 (ko) | 2007-09-06 | 2007-09-06 | 갭 필 능력이 개선된 반도체 미세 갭 필용 유기실란계중합체 및 이를 이용한 반도체 미세 갭 필용 조성물 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200916508A TW200916508A (en) | 2009-04-16 |
| TWI386438B true TWI386438B (zh) | 2013-02-21 |
Family
ID=40429032
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097132713A TWI386438B (zh) | 2007-09-06 | 2008-08-27 | 用於半導體元件之具改良填隙特性的有機矽烷聚合物以及使用該聚合物之塗覆組成物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8299197B2 (enExample) |
| JP (1) | JP5345624B2 (enExample) |
| KR (1) | KR100894417B1 (enExample) |
| CN (1) | CN101796101B (enExample) |
| TW (1) | TWI386438B (enExample) |
| WO (1) | WO2009031733A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110074253A (ko) * | 2009-12-24 | 2011-06-30 | 제일모직주식회사 | 미세 갭필용 중합체, 이를 포함하는 미세 갭필용 조성물, 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
| KR101354637B1 (ko) * | 2009-12-30 | 2014-01-22 | 제일모직주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
| JP5445473B2 (ja) * | 2011-01-14 | 2014-03-19 | 信越化学工業株式会社 | 光学材料形成用シリコーン樹脂組成物及び光学材料 |
| WO2017048268A1 (en) * | 2015-09-17 | 2017-03-23 | Intel Corporation | Gap filling material and process for semiconductor devices |
| US10947412B2 (en) * | 2017-12-19 | 2021-03-16 | Honeywell International Inc. | Crack-resistant silicon-based planarizing compositions, methods and films |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW546326B (en) * | 1998-06-10 | 2003-08-11 | Degussa | New oligomeric organosilanepolysulfanes, rubber mixtures containing them and their use for preparing moulded articles |
| TW575610B (en) * | 2001-07-06 | 2004-02-11 | Degussa | Oligomeric organosilanes, process for their production and their use |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2831398B2 (ja) * | 1989-09-28 | 1998-12-02 | 触媒化成工業株式会社 | 半導体装置の製造方法 |
| WO1995024639A1 (fr) * | 1994-03-11 | 1995-09-14 | Kawasaki Steel Corporation | Procede d'evaluation du siloxane utilise pour former une couche isolante, fluide d'enrobage utilise pour former une telle couche, procede de production de ce fluide, procede de formation d'une couche isolante pour un dispositif a semi-conducteur, et procede de production d'un dispositif a semi-conducteur |
| JPH11181352A (ja) * | 1997-12-25 | 1999-07-06 | Sumitomo Chem Co Ltd | シリカコーティング膜形成用塗布液 |
| US6140445A (en) * | 1998-04-17 | 2000-10-31 | Crompton Corporation | Silane functional oligomer |
| US6713643B2 (en) * | 2001-05-24 | 2004-03-30 | Board Of Trustees Of Michigan State University | Ultrastable organofunctional microporous to mesoporous silica compositions |
| US6852367B2 (en) * | 2001-11-20 | 2005-02-08 | Shipley Company, L.L.C. | Stable composition |
| JP3631236B2 (ja) * | 2002-07-12 | 2005-03-23 | 東京応化工業株式会社 | シリカ系有機被膜の製造方法 |
| JP3906916B2 (ja) * | 2002-07-29 | 2007-04-18 | Ｊｓｒ株式会社 | 膜形成用組成物、膜形成方法および膜 |
| US20040109950A1 (en) * | 2002-09-13 | 2004-06-10 | Shipley Company, L.L.C. | Dielectric materials |
| EP1632956A1 (en) * | 2004-09-07 | 2006-03-08 | Rohm and Haas Electronic Materials, L.L.C. | Compositions comprising an organic polysilica and an arylgroup-capped polyol, and methods for preparing porous organic polysilica films |
| JP4860953B2 (ja) * | 2005-07-08 | 2012-01-25 | 富士通株式会社 | シリカ系被膜形成用材料、シリカ系被膜及びその製造方法、多層配線及びその製造方法、並びに、半導体装置及びその製造方法 |
| EP1762895B1 (en) * | 2005-08-29 | 2016-02-24 | Rohm and Haas Electronic Materials, L.L.C. | Antireflective Hard Mask Compositions |
| US7678529B2 (en) * | 2005-11-21 | 2010-03-16 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing film forming composition, silicon-containing film serving as etching mask, substrate processing intermediate, and substrate processing method |
| KR100796047B1 (ko) * | 2006-11-21 | 2008-01-21 | 제일모직주식회사 | 레지스트 하층막용 하드마스크 조성물, 이를 이용한 반도체집적회로 디바이스의 제조방법 및 그로부터 제조된 반도체집적회로 디바이스 |
| JP2009199061A (ja) * | 2007-11-12 | 2009-09-03 | Rohm & Haas Electronic Materials Llc | オーバーコートされたフォトレジストと共に用いるためのコーティング組成物 |
-
2007
- 2007-09-06 KR KR1020070090677A patent/KR100894417B1/ko active Active
- 2007-12-31 WO PCT/KR2007/007061 patent/WO2009031733A1/en not_active Ceased
- 2007-12-31 CN CN2007801005212A patent/CN101796101B/zh active Active
- 2007-12-31 JP JP2010523924A patent/JP5345624B2/ja active Active
-
2008
- 2008-08-27 TW TW097132713A patent/TWI386438B/zh active
-
2010
- 2010-03-08 US US12/659,379 patent/US8299197B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW546326B (en) * | 1998-06-10 | 2003-08-11 | Degussa | New oligomeric organosilanepolysulfanes, rubber mixtures containing them and their use for preparing moulded articles |
| TW575610B (en) * | 2001-07-06 | 2004-02-11 | Degussa | Oligomeric organosilanes, process for their production and their use |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101796101A (zh) | 2010-08-04 |
| CN101796101B (zh) | 2013-12-18 |
| WO2009031733A1 (en) | 2009-03-12 |
| US20100167553A1 (en) | 2010-07-01 |
| US8299197B2 (en) | 2012-10-30 |
| KR20090025664A (ko) | 2009-03-11 |
| JP2010538143A (ja) | 2010-12-09 |
| JP5345624B2 (ja) | 2013-11-20 |
| TW200916508A (en) | 2009-04-16 |
| KR100894417B1 (ko) | 2009-04-24 |
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