TWI375288B - Integrated metrology chamber for transparent substrates - Google Patents
Integrated metrology chamber for transparent substrates Download PDFInfo
- Publication number
- TWI375288B TWI375288B TW095100110A TW95100110A TWI375288B TW I375288 B TWI375288 B TW I375288B TW 095100110 A TW095100110 A TW 095100110A TW 95100110 A TW95100110 A TW 95100110A TW I375288 B TWI375288 B TW I375288B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- etching
- etch
- measuring
- depth
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 139
- 238000005530 etching Methods 0.000 claims description 59
- 238000005259 measurement Methods 0.000 claims description 53
- 238000000034 method Methods 0.000 claims description 51
- 230000010363 phase shift Effects 0.000 claims description 37
- 229920002120 photoresistant polymer Polymers 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 27
- 238000012546 transfer Methods 0.000 claims description 19
- 239000010453 quartz Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 238000006276 transfer reaction Methods 0.000 claims description 6
- 238000012937 correction Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000012780 transparent material Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 1
- QGHDLJAZIIFENW-UHFFFAOYSA-N 4-[1,1,1,3,3,3-hexafluoro-2-(4-hydroxy-3-prop-2-enylphenyl)propan-2-yl]-2-prop-2-enylphenol Chemical group C1=C(CC=C)C(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C(CC=C)=C1 QGHDLJAZIIFENW-UHFFFAOYSA-N 0.000 description 1
- 150000000918 Europium Chemical class 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical group [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- BGTFCAQCKWKTRL-YDEUACAXSA-N chembl1095986 Chemical compound C1[C@@H](N)[C@@H](O)[C@H](C)O[C@H]1O[C@@H]([C@H]1C(N[C@H](C2=CC(O)=CC(O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O)=C2C=2C(O)=CC=C(C=2)[C@@H](NC(=O)[C@@H]2NC(=O)[C@@H]3C=4C=C(C(=C(O)C=4)C)OC=4C(O)=CC=C(C=4)[C@@H](N)C(=O)N[C@@H](C(=O)N3)[C@H](O)C=3C=CC(O4)=CC=3)C(=O)N1)C(O)=O)=O)C(C=C1)=CC=C1OC1=C(O[C@@H]3[C@H]([C@H](O)[C@@H](O)[C@H](CO[C@@H]5[C@H]([C@@H](O)[C@H](O)[C@@H](C)O5)O)O3)O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O[C@@H]3[C@H]([C@H](O)[C@@H](CO)O3)O)C4=CC2=C1 BGTFCAQCKWKTRL-YDEUACAXSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000000572 ellipsometry Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B43—WRITING OR DRAWING IMPLEMENTS; BUREAU ACCESSORIES
- B43K—IMPLEMENTS FOR WRITING OR DRAWING
- B43K29/00—Combinations of writing implements with other articles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
-
- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63H—TOYS, e.g. TOPS, DOLLS, HOOPS OR BUILDING BLOCKS
- A63H29/00—Drive mechanisms for toys in general
- A63H29/24—Details or accessories for drive mechanisms, e.g. means for winding-up or starting toy engines
-
- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63H—TOYS, e.g. TOPS, DOLLS, HOOPS OR BUILDING BLOCKS
- A63H3/00—Dolls
- A63H3/18—Jumping jacks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Robotics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Drying Of Semiconductors (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/031,400 US20060154388A1 (en) | 2005-01-08 | 2005-01-08 | Integrated metrology chamber for transparent substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200633107A TW200633107A (en) | 2006-09-16 |
| TWI375288B true TWI375288B (en) | 2012-10-21 |
Family
ID=36098810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095100110A TWI375288B (en) | 2005-01-08 | 2006-01-02 | Integrated metrology chamber for transparent substrates |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20060154388A1 (enExample) |
| EP (1) | EP1679548A1 (enExample) |
| JP (1) | JP5392972B2 (enExample) |
| KR (1) | KR101252068B1 (enExample) |
| TW (1) | TWI375288B (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050197721A1 (en) * | 2004-02-20 | 2005-09-08 | Yung-Cheng Chen | Control of exposure energy on a substrate |
| US7601272B2 (en) * | 2005-01-08 | 2009-10-13 | Applied Materials, Inc. | Method and apparatus for integrating metrology with etch processing |
| US20060154388A1 (en) * | 2005-01-08 | 2006-07-13 | Richard Lewington | Integrated metrology chamber for transparent substrates |
| CN100459087C (zh) * | 2006-07-21 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | 确定半导体特征的方法和用于制造集成电路的方法 |
| US8012857B2 (en) * | 2007-08-07 | 2011-09-06 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
| US8859396B2 (en) | 2007-08-07 | 2014-10-14 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
| KR20100061731A (ko) * | 2007-09-14 | 2010-06-08 | 퀄컴 엠이엠스 테크놀로지스, 인크. | Ｍｅｍｓ 제조에 이용되는 에칭 방법 |
| US7765077B2 (en) * | 2007-09-21 | 2010-07-27 | Tokyo Electron Limited | Method and apparatus for creating a Spacer-Optimization (S-O) library |
| CN101889325B (zh) * | 2007-12-06 | 2014-05-07 | 因特瓦克公司 | 用于衬底的两侧溅射蚀刻的系统和方法 |
| US7935464B2 (en) * | 2008-10-30 | 2011-05-03 | Applied Materials, Inc. | System and method for self-aligned dual patterning |
| US7904273B2 (en) * | 2009-02-16 | 2011-03-08 | International Business Machines Corporation | In-line depth measurement for thru silicon via |
| US8232115B2 (en) | 2009-09-25 | 2012-07-31 | International Business Machines Corporation | Test structure for determination of TSV depth |
| US8956809B2 (en) * | 2012-08-03 | 2015-02-17 | Applied Materials, Inc. | Apparatus and methods for etching quartz substrate in photomask manufacturing applications |
| US9136173B2 (en) | 2012-11-07 | 2015-09-15 | Semiconductor Components Industries, Llc | Singulation method for semiconductor die having a layer of material along one major surface |
| US9484260B2 (en) | 2012-11-07 | 2016-11-01 | Semiconductor Components Industries, Llc | Heated carrier substrate semiconductor die singulation method |
| US20150132959A1 (en) * | 2013-11-08 | 2015-05-14 | Leonard TEDESCHI | Pattern formation and transfer directly on silicon based films |
| US10840102B2 (en) * | 2013-11-27 | 2020-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated system, integrated system operation method and film treatment method |
| US9418894B2 (en) | 2014-03-21 | 2016-08-16 | Semiconductor Components Industries, Llc | Electronic die singulation method |
| US9385041B2 (en) | 2014-08-26 | 2016-07-05 | Semiconductor Components Industries, Llc | Method for insulating singulated electronic die |
| US10095102B2 (en) * | 2016-04-12 | 2018-10-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photomask having a plurality of shielding layers |
| US10366923B2 (en) | 2016-06-02 | 2019-07-30 | Semiconductor Components Industries, Llc | Method of separating electronic devices having a back layer and apparatus |
| US10373869B2 (en) | 2017-05-24 | 2019-08-06 | Semiconductor Components Industries, Llc | Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus |
| US12112959B2 (en) | 2018-09-04 | 2024-10-08 | Tokyo Electron Limited | Processing systems and platforms for roughness reduction of materials using illuminated etch solutions |
| KR102740093B1 (ko) * | 2018-12-14 | 2024-12-06 | 도쿄엘렉트론가부시키가이샤 | 조명된 에칭 용액을 사용하여 재료의 거칠기를 감소시키기 위한 공정 시스템 및 플랫폼 |
| US10818551B2 (en) | 2019-01-09 | 2020-10-27 | Semiconductor Components Industries, Llc | Plasma die singulation systems and related methods |
| JP7365878B2 (ja) * | 2019-12-06 | 2023-10-20 | 東京エレクトロン株式会社 | 計測装置及び計測方法 |
Family Cites Families (80)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5795056A (en) * | 1980-12-05 | 1982-06-12 | Hitachi Ltd | Appearance inspecting process |
| JPS61290312A (ja) | 1985-06-19 | 1986-12-20 | Hitachi Ltd | 断面形状測定装置 |
| US5109430A (en) * | 1986-07-22 | 1992-04-28 | Schlumberger Technologies, Inc. | Mask alignment and measurement of critical dimensions in integrated circuits |
| US4767496A (en) * | 1986-12-11 | 1988-08-30 | Siemens Aktiengesellschaft | Method for controlling and supervising etching processes |
| US4911103A (en) * | 1987-07-17 | 1990-03-27 | Texas Instruments Incorporated | Processing apparatus and method |
| JPH0492444A (ja) * | 1990-08-08 | 1992-03-25 | Hitachi Ltd | 処理方法および装置 |
| US5171393A (en) * | 1991-07-29 | 1992-12-15 | Moffat William A | Wafer processing apparatus |
| US5499733A (en) * | 1992-09-17 | 1996-03-19 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
| US5653894A (en) * | 1992-12-14 | 1997-08-05 | Lucent Technologies Inc. | Active neural network determination of endpoint in a plasma etch process |
| US5891352A (en) * | 1993-09-16 | 1999-04-06 | Luxtron Corporation | Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment |
| US5452521A (en) * | 1994-03-09 | 1995-09-26 | Niewmierzycki; Leszek | Workpiece alignment structure and method |
| US5607800A (en) | 1995-02-15 | 1997-03-04 | Lucent Technologies Inc. | Method and arrangement for characterizing micro-size patterns |
| US5711849A (en) * | 1995-05-03 | 1998-01-27 | Daniel L. Flamm | Process optimization in gas phase dry etching |
| US6001699A (en) * | 1996-01-23 | 1999-12-14 | Intel Corporation | Highly selective etch process for submicron contacts |
| US5798529A (en) * | 1996-05-28 | 1998-08-25 | International Business Machines Corporation | Focused ion beam metrology |
| US6060022A (en) * | 1996-07-05 | 2000-05-09 | Beckman Coulter, Inc. | Automated sample processing system including automatic centrifuge device |
| US5944940A (en) * | 1996-07-09 | 1999-08-31 | Gamma Precision Technology, Inc. | Wafer transfer system and method of using the same |
| US6143081A (en) * | 1996-07-12 | 2000-11-07 | Tokyo Electron Limited | Film forming apparatus and method, and film modifying apparatus and method |
| US5948203A (en) * | 1996-07-29 | 1999-09-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optical dielectric thickness monitor for chemical-mechanical polishing process monitoring |
| US5913102A (en) * | 1997-03-20 | 1999-06-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming patterned photoresist layers with enhanced critical dimension uniformity |
| US5926690A (en) * | 1997-05-28 | 1999-07-20 | Advanced Micro Devices, Inc. | Run-to-run control process for controlling critical dimensions |
| US5976740A (en) * | 1997-08-28 | 1999-11-02 | International Business Machines Corporation | Process for controlling exposure dose or focus parameters using tone reversing pattern |
| US5965309A (en) * | 1997-08-28 | 1999-10-12 | International Business Machines Corporation | Focus or exposure dose parameter control system using tone reversing patterns |
| US6161054A (en) * | 1997-09-22 | 2000-12-12 | On-Line Technologies, Inc. | Cell control method and apparatus |
| US6129807A (en) * | 1997-10-06 | 2000-10-10 | Applied Materials, Inc. | Apparatus for monitoring processing of a substrate |
| US6124212A (en) * | 1997-10-08 | 2000-09-26 | Taiwan Semiconductor Manufacturing Co. | High density plasma (HDP) etch method for suppressing micro-loading effects when etching polysilicon layers |
| US5963329A (en) * | 1997-10-31 | 1999-10-05 | International Business Machines Corporation | Method and apparatus for measuring the profile of small repeating lines |
| US6148239A (en) * | 1997-12-12 | 2000-11-14 | Advanced Micro Devices, Inc. | Process control system using feed forward control threads based on material groups |
| US6054710A (en) * | 1997-12-18 | 2000-04-25 | Cypress Semiconductor Corp. | Method and apparatus for obtaining two- or three-dimensional information from scanning electron microscopy |
| US6452677B1 (en) * | 1998-02-13 | 2002-09-17 | Micron Technology Inc. | Method and apparatus for detecting defects in the manufacture of an electronic device |
| US6033814A (en) * | 1998-02-26 | 2000-03-07 | Micron Technology, Inc. | Method for multiple process parameter matching |
| US6067357A (en) * | 1998-03-04 | 2000-05-23 | Genesys Telecommunications Laboratories Inc. | Telephony call-center scripting by Petri Net principles and techniques |
| IL125338A0 (en) * | 1998-07-14 | 1999-03-12 | Nova Measuring Instr Ltd | Method and apparatus for monitoring and control of photolithography exposure and processing tools |
| JP4601744B2 (ja) * | 1998-07-14 | 2010-12-22 | ノバ メジャリング インスツルメンツ リミテッド | フォトリソグラフィープロセスを制御するための方法およびシステム |
| US6424733B2 (en) * | 1998-07-20 | 2002-07-23 | Micron Technology, Inc. | Method and apparatus for inspecting wafers |
| US6183594B1 (en) * | 1998-09-25 | 2001-02-06 | International Business Machines Corporation | Method and system for detecting the end-point in etching processes |
| JP3090139B1 (ja) * | 1999-03-05 | 2000-09-18 | ミノルタ株式会社 | プロジェクタ用光学系 |
| WO2000058188A1 (en) * | 1999-03-25 | 2000-10-05 | N & K Technology, Inc. | Wafer handling robot having x-y stage for wafer handling and positioning |
| US6455437B1 (en) * | 1999-04-07 | 2002-09-24 | Applied Materials Inc. | Method and apparatus for monitoring the process state of a semiconductor device fabrication process |
| EP1065567A3 (en) * | 1999-06-29 | 2001-05-16 | Applied Materials, Inc. | Integrated critical dimension control |
| US6166509A (en) * | 1999-07-07 | 2000-12-26 | Applied Materials, Inc. | Detection system for substrate clamp |
| US6368975B1 (en) * | 1999-07-07 | 2002-04-09 | Applied Materials, Inc. | Method and apparatus for monitoring a process by employing principal component analysis |
| US6583065B1 (en) | 1999-08-03 | 2003-06-24 | Applied Materials Inc. | Sidewall polymer forming gas additives for etching processes |
| EP1079426A1 (en) | 1999-08-16 | 2001-02-28 | Applied Materials, Inc. | Integration scheme using selfplanarized dielectric layer for shallow trench isolation (STI) |
| US6225639B1 (en) | 1999-08-27 | 2001-05-01 | Agere Systems Guardian Corp. | Method of monitoring a patterned transfer process using line width metrology |
| US6707544B1 (en) | 1999-09-07 | 2004-03-16 | Applied Materials, Inc. | Particle detection and embedded vision system to enhance substrate yield and throughput |
| US6721045B1 (en) * | 1999-09-07 | 2004-04-13 | Applied Materials, Inc. | Method and apparatus to provide embedded substrate process monitoring through consolidation of multiple process inspection techniques |
| US6413867B1 (en) * | 1999-12-23 | 2002-07-02 | Applied Materials, Inc. | Film thickness control using spectral interferometry |
| JP3974319B2 (ja) * | 2000-03-30 | 2007-09-12 | 株式会社東芝 | エッチング方法 |
| EP1269521A1 (en) * | 2000-04-07 | 2003-01-02 | Varian Semiconductor Equipment Associates Inc. | WAFER ORIENTATION SENSOR FOR GaAs WAFERS |
| US6245581B1 (en) * | 2000-04-19 | 2001-06-12 | Advanced Micro Devices, Inc. | Method and apparatus for control of critical dimension using feedback etch control |
| US6411389B1 (en) * | 2000-05-03 | 2002-06-25 | The Regents Of The University Of Claifornia | Optical monitor for real time thickness change measurements via lateral-translation induced phase-stepping interferometry |
| WO2001084382A1 (en) | 2000-05-04 | 2001-11-08 | Kla-Tencor, Inc. | Methods and systems for lithography process control |
| US6625512B1 (en) | 2000-07-25 | 2003-09-23 | Advanced Micro Devices, Inc. | Method and apparatus for performing final critical dimension control |
| IL139368A (en) | 2000-10-30 | 2006-12-10 | Nova Measuring Instr Ltd | Process control for microlithography |
| US6625497B2 (en) * | 2000-11-20 | 2003-09-23 | Applied Materials Inc. | Semiconductor processing module with integrated feedback/feed forward metrology |
| US20020147960A1 (en) * | 2001-01-26 | 2002-10-10 | Applied Materials, Inc. | Method and apparatus for determining scheduling for wafer processing in cluster tools with integrated metrology and defect control |
| US6653231B2 (en) * | 2001-03-28 | 2003-11-25 | Advanced Micro Devices, Inc. | Process for reducing the critical dimensions of integrated circuit device features |
| US6525829B1 (en) * | 2001-05-25 | 2003-02-25 | Novellus Systems, Inc. | Method and apparatus for in-situ measurement of thickness of copper oxide film using optical reflectivity |
| US6479309B1 (en) * | 2001-05-25 | 2002-11-12 | Advanced Micro Devices, Inc. | Method and apparatus for determining process layer conformality |
| US20030000922A1 (en) * | 2001-06-27 | 2003-01-02 | Ramkumar Subramanian | Using scatterometry to develop real time etch image |
| US6649426B2 (en) | 2001-06-28 | 2003-11-18 | Advanced Micro Devices, Inc. | System and method for active control of spacer deposition |
| US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
| US20030052084A1 (en) * | 2001-09-18 | 2003-03-20 | Tabery Cyrus E. | In-situ or ex-situ profile monitoring of phase openings on alternating phase shifting masks by scatterometry |
| US20030092281A1 (en) * | 2001-11-13 | 2003-05-15 | Chartered Semiconductors Manufactured Limited | Method for organic barc and photoresist trimming process |
| US6960416B2 (en) * | 2002-03-01 | 2005-11-01 | Applied Materials, Inc. | Method and apparatus for controlling etch processes during fabrication of semiconductor devices |
| JP4197103B2 (ja) | 2002-04-15 | 2008-12-17 | 株式会社荏原製作所 | ポリッシング装置 |
| US6762130B2 (en) * | 2002-05-31 | 2004-07-13 | Texas Instruments Incorporated | Method of photolithographically forming extremely narrow transistor gate elements |
| US6825487B2 (en) * | 2002-07-30 | 2004-11-30 | Seh America, Inc. | Method for isolation of wafer support-related crystal defects |
| JP4584531B2 (ja) * | 2002-08-02 | 2010-11-24 | 株式会社日立製作所 | 異物モニタリングシステム |
| US6939811B2 (en) * | 2002-09-25 | 2005-09-06 | Lam Research Corporation | Apparatus and method for controlling etch depth |
| US20040200574A1 (en) * | 2003-04-11 | 2004-10-14 | Applied Materials, Inc. | Method for controlling a process for fabricating integrated devices |
| US8257546B2 (en) * | 2003-04-11 | 2012-09-04 | Applied Materials, Inc. | Method and system for monitoring an etch process |
| US7094613B2 (en) * | 2003-10-21 | 2006-08-22 | Applied Materials, Inc. | Method for controlling accuracy and repeatability of an etch process |
| US7250309B2 (en) * | 2004-01-09 | 2007-07-31 | Applied Materials, Inc. | Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control |
| KR100568867B1 (ko) * | 2004-03-18 | 2006-04-10 | 삼성전자주식회사 | 웨이퍼 좌표감지장치 및 그 웨이퍼 좌표감지 기능을 갖는반도체 제조설비 |
| US7076320B1 (en) * | 2004-05-04 | 2006-07-11 | Advanced Micro Devices, Inc. | Scatterometry monitor in cluster process tool environment for advanced process control (APC) |
| US6961626B1 (en) * | 2004-05-28 | 2005-11-01 | Applied Materials, Inc | Dynamic offset and feedback threshold |
| US20060154388A1 (en) * | 2005-01-08 | 2006-07-13 | Richard Lewington | Integrated metrology chamber for transparent substrates |
| US7601272B2 (en) * | 2005-01-08 | 2009-10-13 | Applied Materials, Inc. | Method and apparatus for integrating metrology with etch processing |
-
2005
- 2005-01-08 US US11/031,400 patent/US20060154388A1/en not_active Abandoned
-
2006
- 2006-01-02 TW TW095100110A patent/TWI375288B/zh not_active IP Right Cessation
- 2006-01-05 EP EP06250044A patent/EP1679548A1/en not_active Withdrawn
- 2006-01-06 KR KR1020060001698A patent/KR101252068B1/ko not_active Expired - Fee Related
- 2006-01-10 JP JP2006002870A patent/JP5392972B2/ja not_active Expired - Fee Related
- 2006-09-15 US US11/532,195 patent/US7846848B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20060154388A1 (en) | 2006-07-13 |
| TW200633107A (en) | 2006-09-16 |
| JP5392972B2 (ja) | 2014-01-22 |
| JP2006194878A (ja) | 2006-07-27 |
| US20070012660A1 (en) | 2007-01-18 |
| US7846848B2 (en) | 2010-12-07 |
| EP1679548A1 (en) | 2006-07-12 |
| KR101252068B1 (ko) | 2013-04-15 |
| KR20060081365A (ko) | 2006-07-12 |
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