TWI372418B - Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same - Google Patents
Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the sameInfo
- Publication number
- TWI372418B TWI372418B TW097131039A TW97131039A TWI372418B TW I372418 B TWI372418 B TW I372418B TW 097131039 A TW097131039 A TW 097131039A TW 97131039 A TW97131039 A TW 97131039A TW I372418 B TWI372418 B TW I372418B
- Authority
- TW
- Taiwan
- Prior art keywords
- same
- film formed
- nanostructured thin
- angle deposition
- utilizing oblique
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
- C23C14/226—Oblique incidence of vaporised material on substrate in order to form films with columnar structure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249978—Voids specified as micro
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Manufacturing Of Electric Cables (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW097131039A TWI372418B (en) | 2008-08-14 | 2008-08-14 | Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same |
US12/289,816 US7998539B2 (en) | 2008-08-14 | 2008-11-05 | Method of forming thin-film structure by oblique-angle deposition |
JP2008297210A JP5621955B2 (ja) | 2008-08-14 | 2008-11-20 | 斜め堆積を用いて生成されたナノ構造薄膜およびその方法 |
US12/822,658 US20100261001A1 (en) | 2008-08-14 | 2010-06-24 | Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW097131039A TWI372418B (en) | 2008-08-14 | 2008-08-14 | Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201007818A TW201007818A (en) | 2010-02-16 |
TWI372418B true TWI372418B (en) | 2012-09-11 |
Family
ID=41681456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW097131039A TWI372418B (en) | 2008-08-14 | 2008-08-14 | Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same |
Country Status (3)
Country | Link |
---|---|
US (2) | US7998539B2 (zh) |
JP (1) | JP5621955B2 (zh) |
TW (1) | TWI372418B (zh) |
Cited By (1)
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---|---|---|---|---|
US9253890B2 (en) | 2013-08-16 | 2016-02-02 | Industrial Technology Research Institute | Patterned conductive film, method of fabricating the same, and application thereof |
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US8110435B2 (en) * | 2008-12-18 | 2012-02-07 | Jusung Engineering Co., Ltd. | Method and apparatus for manufacturing semiconductor device |
ES2557385T3 (es) | 2010-02-26 | 2016-01-25 | Nippon Soda Co., Ltd. | Derivado de tetrazoliloxima o una sal del mismo y germicida |
KR101217786B1 (ko) * | 2010-05-20 | 2013-01-02 | 포항공과대학교 산학협력단 | 전자선 증착장비를 이용한 인듐 주석 산화물 나노 막대 제조 방법 |
KR101243633B1 (ko) * | 2010-05-20 | 2013-03-14 | 포항공과대학교 산학협력단 | 전자선 증착 장비를 이용한 산화아연 나노 막대 제조방법 |
JP5792523B2 (ja) * | 2010-06-18 | 2015-10-14 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法 |
TW201211529A (en) | 2010-09-01 | 2012-03-16 | Univ Nat Chiao Tung | Ion sensor |
CN102074654B (zh) * | 2010-11-23 | 2012-06-27 | 中国科学院半导体研究所 | 提高聚合物太阳电池效率的制备方法 |
CA2831640C (en) * | 2011-04-07 | 2018-10-09 | Novartis Ag | Optical structures with nanostructure features and methods of use and manufacture |
US9001322B2 (en) | 2011-08-30 | 2015-04-07 | Cornell University | Surface enhanced raman scattering (SERS) apparatus, methods and applications |
WO2013103857A1 (en) * | 2012-01-04 | 2013-07-11 | Raydex Technology, Inc. | Method and structure of optical thin film using crystalled nano-porous material |
US9651721B2 (en) | 2012-08-27 | 2017-05-16 | Avery Dennison Corporation | Retroreflector with low refractive index backing |
CN103031522B (zh) * | 2012-12-25 | 2015-06-03 | 大连理工大学 | 一种渐变性能铝掺杂氧化锌薄膜的制备方法 |
HK1177096A2 (en) * | 2013-04-16 | 2013-08-09 | Meco Technology Ltd | An optical transparent aluminum oxide board and its manufacture method |
CN103409723A (zh) * | 2013-06-29 | 2013-11-27 | 电子科技大学 | 薄膜沉积制备方法以及纳米纤维结构柔性缓冲层制备方法 |
KR101499496B1 (ko) | 2013-07-19 | 2015-03-18 | 국립대학법인 울산과학기술대학교 산학협력단 | 나노크기의 원통형 플라즈모닉 메타구조체 제조방법 |
JP6380932B2 (ja) * | 2014-10-21 | 2018-08-29 | 株式会社日立製作所 | ナノオーダ構造体の製造方法および製造装置 |
WO2018053499A1 (en) | 2016-09-19 | 2018-03-22 | University Of Central Florida Research Foundation, Inc. | Production of nanoporous films |
CN109103090B (zh) * | 2017-06-21 | 2020-12-04 | 清华大学 | 纳米带的制备方法 |
CN109103101B (zh) * | 2017-06-21 | 2020-09-29 | 清华大学 | 纳米微结构的制备方法 |
US11075079B2 (en) * | 2017-11-21 | 2021-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Directional deposition for semiconductor fabrication |
CN110129749A (zh) * | 2019-05-13 | 2019-08-16 | 江西沃格光电股份有限公司 | 渐变色镀膜基板及其制备方法、镀膜治具 |
CN110208245B (zh) * | 2019-06-19 | 2020-09-08 | 清华大学 | 一种纸基柔性表面增强拉曼散射效应基片及其制备方法 |
CN112760603A (zh) * | 2019-11-01 | 2021-05-07 | 有研工程技术研究院有限公司 | 一种多孔柱状氧化铟气敏薄膜的制备方法 |
KR102385038B1 (ko) * | 2020-03-16 | 2022-04-12 | 티오에스주식회사 | 단결정 금속산화물 반도체 에피 성장 장치 |
CN115156524B (zh) * | 2022-08-18 | 2024-07-05 | 中南大学 | 一种异位成核的双层MoS2纳米片及其制备方法 |
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JP3506080B2 (ja) * | 1998-12-08 | 2004-03-15 | 株式会社豊田中央研究所 | 半導体電極およびその製造方法 |
JP2001180920A (ja) * | 1999-12-24 | 2001-07-03 | Nec Corp | ナノチューブの加工方法及び電界放出型冷陰極の製造方法並びに表示装置の製造方法 |
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US7203001B2 (en) * | 2003-12-19 | 2007-04-10 | Nanoopto Corporation | Optical retarders and related devices and systems |
US20050275944A1 (en) * | 2004-06-11 | 2005-12-15 | Wang Jian J | Optical films and methods of making the same |
US20070207318A1 (en) * | 2004-07-21 | 2007-09-06 | Sungho Jin | Catalytically Grown Mano-Bent Nanostructure and Method for Making the Same |
WO2006041691A2 (en) * | 2004-10-06 | 2006-04-20 | The Regents Of The University Of California | Improved nanotube-based nanoprobe structure and method for making the same |
US7658991B2 (en) * | 2004-10-21 | 2010-02-09 | University Of Georgia Research Foundation, Inc. | Structures having aligned nanorods and methods of making |
EP1750310A3 (en) * | 2005-08-03 | 2009-07-15 | Samsung Electro-Mechanics Co., Ltd. | Omni-directional reflector and light emitting diode adopting the same |
WO2007053242A2 (en) * | 2005-09-19 | 2007-05-10 | Wayne State University | Transparent hydrophobic article having self-cleaning and liquid repellant features and method of fabricating same |
CA2624778A1 (en) * | 2005-12-29 | 2007-11-22 | Nanosys, Inc. | Methods for oriented growth of nanowires on patterned substrates |
US20080176074A1 (en) * | 2006-07-07 | 2008-07-24 | Ilsoon Lee | Asymmetric nanoparticles from polymer nanospheres |
JP5303835B2 (ja) * | 2006-12-27 | 2013-10-02 | 株式会社リコー | 蒸着膜とこれを用いた光路偏向素子、空間光変調素子、及び投射型画像表示装置 |
US7864426B2 (en) * | 2007-02-13 | 2011-01-04 | Xradia, Inc. | High aspect-ratio X-ray diffractive structure stabilization methods and systems |
US8168251B2 (en) * | 2008-10-10 | 2012-05-01 | The Board Of Trustees Of The Leland Stanford Junior University | Method for producing tapered metallic nanowire tips on atomic force microscope cantilevers |
-
2008
- 2008-08-14 TW TW097131039A patent/TWI372418B/zh not_active IP Right Cessation
- 2008-11-05 US US12/289,816 patent/US7998539B2/en not_active Expired - Fee Related
- 2008-11-20 JP JP2008297210A patent/JP5621955B2/ja not_active Expired - Fee Related
-
2010
- 2010-06-24 US US12/822,658 patent/US20100261001A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9253890B2 (en) | 2013-08-16 | 2016-02-02 | Industrial Technology Research Institute | Patterned conductive film, method of fabricating the same, and application thereof |
Also Published As
Publication number | Publication date |
---|---|
US20100040859A1 (en) | 2010-02-18 |
TW201007818A (en) | 2010-02-16 |
JP2010043348A (ja) | 2010-02-25 |
US7998539B2 (en) | 2011-08-16 |
JP5621955B2 (ja) | 2014-11-12 |
US20100261001A1 (en) | 2010-10-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |