JP2010043348A - 斜め堆積を用いて生成されたナノ構造薄膜およびその方法 - Google Patents
斜め堆積を用いて生成されたナノ構造薄膜およびその方法 Download PDFInfo
- Publication number
- JP2010043348A JP2010043348A JP2008297210A JP2008297210A JP2010043348A JP 2010043348 A JP2010043348 A JP 2010043348A JP 2008297210 A JP2008297210 A JP 2008297210A JP 2008297210 A JP2008297210 A JP 2008297210A JP 2010043348 A JP2010043348 A JP 2010043348A
- Authority
- JP
- Japan
- Prior art keywords
- deposition
- thin film
- substrate
- present
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000151 deposition Methods 0.000 title claims abstract description 41
- 239000010409 thin film Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000002086 nanomaterial Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 42
- 230000008569 process Effects 0.000 claims abstract description 30
- 238000007740 vapor deposition Methods 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 239000002356 single layer Substances 0.000 claims abstract description 4
- 230000008021 deposition Effects 0.000 claims description 29
- 239000007789 gas Substances 0.000 claims description 18
- 239000002073 nanorod Substances 0.000 claims description 17
- 239000010408 film Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 230000005693 optoelectronics Effects 0.000 description 14
- 238000002834 transmittance Methods 0.000 description 9
- 210000004027 cell Anatomy 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 238000005566 electron beam evaporation Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000010419 fine particle Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 239000012080 ambient air Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000012788 optical film Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002329 infrared spectrum Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
- C23C14/226—Oblique incidence of vaporised material on substrate in order to form films with columnar structure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249978—Voids specified as micro
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
【解決手段】電子ビームシステム100を用いて、ターゲットソースが斜め堆積法により蒸着される。複数の調整可能な試料ステージ104上に蒸着基板114が配置される。プロセスチャンバー101内でガスの流量および温度を制御するため、熱源と複数のガス制御弁107および108が備えられる。蒸着後、薄膜構造と光電子特性を向上させるため、アニール工程が行われる。
【選択図】図1a
Description
アルミ亜鉛酸化物(AZO)、ZnO、および、透明導電性膜を生成可能なその他の物質が含まれる。本発明での蒸着基板には、Si基板、GaAs基板、ガラス基板、フレキシブル基板等が含まれる。この工程中、蒸着基板は特定の角度に調整され、望ましい透明電極構造を得るため、基板の法線方向とターゲット微粒子の入射方向との間に挟まれる角度は0°から90°内に制御されるが、図1bの挟まれ角117に示されるように、望ましい角度は50°から90°である。一般に、窒素、酸素、あるいはアセチレン等、プロセスガスが蒸着時に導入される場合には、ガスのタイプと流量の両方が、蒸着される薄膜の電気的特性と光学的特性に影響を及ぼす。本発明の実施例では、蒸着工程時、チャンバーには、酸素、窒素、またはこれらを組み合わせたもの、が導入される。ガスの流量は0sccmから50sccmの間で構成される。蒸着システムは、望ましい電気的特性と光学的特性を得るため、同時にチャンバーの圧力を103トルから106トルの間に維持する。その結果を、次の実施例で説明する。蒸着工程の前に、プロセスチャンバーはプロセス温度まで予熱される。本発明の実施例では、電子ビーム蒸着システム内の温度は、約100°Cから450°Cに構成される。蒸着が完了すると、透明導電性薄膜が蒸着基板上に生成される。望ましい薄膜電極構造を得るため、蒸着後、熱アニールの工程が適用される(203)。アニールの工程中に酸素が導入され、温度は200°Cから900°Cに構成され、本工程の持続時間は約1分から60分である。本発明における熱アニールの工程により、薄膜の微細構造の透過率がさらに増大し、その抵抗率はさらに減少する。
101:外部チャンバー
102:中央ディスク
103:支持シャフト
104:試料ステージ
105:回転部品
106:カンチレバー
107、108:ガス制御弁
109:ターゲットソース
110:坩堝
111:熱源
112:熱電対
114:堆積基板
115:入射方向
116:法線方向
117:115と116間の角度
118:ターゲット微粒子
119:ナノロッド構造
Claims (6)
- 斜め堆積による薄膜構造の生成方法であって、
電子ビーム堆積システムにより、チャンバー内でターゲットソースを堆積するステップと、
斜め堆積により蒸着基板上に薄膜を生成するため、前記チャンバーにプロセスガスを導入し、前記蒸着基板の傾斜角を調整し、蒸着時、前記チャンバー内のプロセス温度を制御しておくステップと、
多孔質のナノロッド微細構造をもつ薄膜を生成するため、前記蒸着基板をアニールするステップとを含むことを特徴とする方法。 - 前記の導入されるプロセスガスが酸素、窒素、およびそれを組み合わせたものを含み、
前記の導入されるプロセスガスの流量が0sccmから50sccmまでである、請求項1に記載の方法。 - 前記のターゲットソースの入射方向と前記蒸着基板の法線方向との間に挟まれる角度が0゜から90゜である、請求項1に記載の方法。
- 前記アニールが1分から60分程度持続し、アニール温度が200゜Cから900゜Cに制御される、請求項1に記載の方法。
- 勾配型屈折率と良好な透過率とを備えた単層構造を生成するため、前記膜が、縁部が細くなった、多孔質のナノロッドを含む、電子ビーム斜め堆積により生成される膜。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW097131039A TWI372418B (en) | 2008-08-14 | 2008-08-14 | Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same |
TW097131039 | 2008-08-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010043348A true JP2010043348A (ja) | 2010-02-25 |
JP5621955B2 JP5621955B2 (ja) | 2014-11-12 |
Family
ID=41681456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008297210A Expired - Fee Related JP5621955B2 (ja) | 2008-08-14 | 2008-11-20 | 斜め堆積を用いて生成されたナノ構造薄膜およびその方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7998539B2 (ja) |
JP (1) | JP5621955B2 (ja) |
TW (1) | TWI372418B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011105239A1 (ja) | 2010-02-26 | 2011-09-01 | 日本曹達株式会社 | テトラゾリルオキシム誘導体またはその塩、ならびに殺菌剤 |
CN103409723A (zh) * | 2013-06-29 | 2013-11-27 | 电子科技大学 | 薄膜沉积制备方法以及纳米纤维结构柔性缓冲层制备方法 |
JP2015529854A (ja) * | 2012-08-27 | 2015-10-08 | エーブリー デニソン コーポレイションAvery Dennison Corporation | 低屈折率基材を備えた再帰反射体 |
JP2016079486A (ja) * | 2014-10-21 | 2016-05-16 | 株式会社日立製作所 | ナノオーダ構造体の製造方法および製造装置、並びにナノオーダ構造体を有する基板構造体 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8110435B2 (en) * | 2008-12-18 | 2012-02-07 | Jusung Engineering Co., Ltd. | Method and apparatus for manufacturing semiconductor device |
KR101243633B1 (ko) * | 2010-05-20 | 2013-03-14 | 포항공과대학교 산학협력단 | 전자선 증착 장비를 이용한 산화아연 나노 막대 제조방법 |
KR101217786B1 (ko) * | 2010-05-20 | 2013-01-02 | 포항공과대학교 산학협력단 | 전자선 증착장비를 이용한 인듐 주석 산화물 나노 막대 제조 방법 |
TWI514599B (zh) * | 2010-06-18 | 2015-12-21 | Semiconductor Energy Lab | 光電轉換裝置及其製造方法 |
TW201211529A (en) | 2010-09-01 | 2012-03-16 | Univ Nat Chiao Tung | Ion sensor |
CN102074654B (zh) * | 2010-11-23 | 2012-06-27 | 中国科学院半导体研究所 | 提高聚合物太阳电池效率的制备方法 |
ES2642987T3 (es) * | 2011-04-07 | 2017-11-20 | Novartis Ag | Estructuras ópticas con características nanoestructurales y métodos de utilización y fabricación |
US9001322B2 (en) | 2011-08-30 | 2015-04-07 | Cornell University | Surface enhanced raman scattering (SERS) apparatus, methods and applications |
WO2013103857A1 (en) * | 2012-01-04 | 2013-07-11 | Raydex Technology, Inc. | Method and structure of optical thin film using crystalled nano-porous material |
CN103031522B (zh) * | 2012-12-25 | 2015-06-03 | 大连理工大学 | 一种渐变性能铝掺杂氧化锌薄膜的制备方法 |
HK1177096A2 (en) * | 2013-04-16 | 2013-08-09 | Meco Technology Ltd | An optical transparent aluminum oxide board and its manufacture method |
KR101499496B1 (ko) | 2013-07-19 | 2015-03-18 | 국립대학법인 울산과학기술대학교 산학협력단 | 나노크기의 원통형 플라즈모닉 메타구조체 제조방법 |
TWI518756B (zh) | 2013-08-16 | 2016-01-21 | 財團法人工業技術研究院 | 圖案化的導電薄膜及其製造方法與應用 |
US11697885B2 (en) | 2016-09-19 | 2023-07-11 | University Of Central Florida Research Foundation, Inc. | Production of nanoporous films |
CN109103101B (zh) * | 2017-06-21 | 2020-09-29 | 清华大学 | 纳米微结构的制备方法 |
CN109103090B (zh) * | 2017-06-21 | 2020-12-04 | 清华大学 | 纳米带的制备方法 |
US11075079B2 (en) | 2017-11-21 | 2021-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Directional deposition for semiconductor fabrication |
CN110129749A (zh) * | 2019-05-13 | 2019-08-16 | 江西沃格光电股份有限公司 | 渐变色镀膜基板及其制备方法、镀膜治具 |
CN110208245B (zh) * | 2019-06-19 | 2020-09-08 | 清华大学 | 一种纸基柔性表面增强拉曼散射效应基片及其制备方法 |
CN112760603A (zh) * | 2019-11-01 | 2021-05-07 | 有研工程技术研究院有限公司 | 一种多孔柱状氧化铟气敏薄膜的制备方法 |
KR102385038B1 (ko) * | 2020-03-16 | 2022-04-12 | 티오에스주식회사 | 단결정 금속산화물 반도체 에피 성장 장치 |
CN218842311U (zh) * | 2022-08-31 | 2023-04-11 | 安徽其芒光电科技有限公司 | 薄膜沉积装置 |
CN116891998A (zh) * | 2023-09-11 | 2023-10-17 | 通威微电子有限公司 | 中继环碳化钽镀膜设备和方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000231943A (ja) * | 1998-12-08 | 2000-08-22 | Toyota Central Res & Dev Lab Inc | 半導体電極およびその製造方法 |
JP2004045784A (ja) * | 2002-07-12 | 2004-02-12 | Sony Corp | 液晶パネルおよびその製造方法 |
JP2007043045A (ja) * | 2005-08-03 | 2007-02-15 | Samsung Electro Mech Co Ltd | 単一指向性反射器及びこれを適用した発光素子 |
JP2008163375A (ja) * | 2006-12-27 | 2008-07-17 | Ricoh Co Ltd | 蒸着膜とこれを用いた光路偏向素子、空間光変調素子、及び投射型画像表示装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4744636A (en) * | 1987-05-05 | 1988-05-17 | Tektronix, Inc. | Electron beam-addressed liquid crystal cell having coating layer for secondary electron emission |
JP2001180920A (ja) * | 1999-12-24 | 2001-07-03 | Nec Corp | ナノチューブの加工方法及び電界放出型冷陰極の製造方法並びに表示装置の製造方法 |
CN100529155C (zh) * | 2003-07-03 | 2009-08-19 | 伊菲雷知识产权公司 | 用于无机发光材料沉积的硫化氢注射方法 |
EP1649514B1 (en) * | 2003-07-30 | 2014-01-01 | Panasonic Corporation | Semiconductor light emitting device, light emitting module, and lighting apparatus |
US7203001B2 (en) * | 2003-12-19 | 2007-04-10 | Nanoopto Corporation | Optical retarders and related devices and systems |
US20050275944A1 (en) * | 2004-06-11 | 2005-12-15 | Wang Jian J | Optical films and methods of making the same |
WO2006135375A2 (en) * | 2004-07-21 | 2006-12-21 | The Regents Of The University Of California | Catalytically grown nano-bent nanostructure and method for making the same |
US20080098805A1 (en) * | 2004-10-06 | 2008-05-01 | Sungho Jin | Nanotube-Based Nanoprobe Structure and Method for Making the Same |
US7658991B2 (en) * | 2004-10-21 | 2010-02-09 | University Of Georgia Research Foundation, Inc. | Structures having aligned nanorods and methods of making |
WO2007053242A2 (en) * | 2005-09-19 | 2007-05-10 | Wayne State University | Transparent hydrophobic article having self-cleaning and liquid repellant features and method of fabricating same |
EP1966847B1 (en) * | 2005-12-29 | 2015-03-04 | Oned Material LLC | Methods for oriented growth of nanowires on patterned substrates |
US20080176074A1 (en) * | 2006-07-07 | 2008-07-24 | Ilsoon Lee | Asymmetric nanoparticles from polymer nanospheres |
US7864426B2 (en) * | 2007-02-13 | 2011-01-04 | Xradia, Inc. | High aspect-ratio X-ray diffractive structure stabilization methods and systems |
US8168251B2 (en) * | 2008-10-10 | 2012-05-01 | The Board Of Trustees Of The Leland Stanford Junior University | Method for producing tapered metallic nanowire tips on atomic force microscope cantilevers |
-
2008
- 2008-08-14 TW TW097131039A patent/TWI372418B/zh not_active IP Right Cessation
- 2008-11-05 US US12/289,816 patent/US7998539B2/en not_active Expired - Fee Related
- 2008-11-20 JP JP2008297210A patent/JP5621955B2/ja not_active Expired - Fee Related
-
2010
- 2010-06-24 US US12/822,658 patent/US20100261001A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000231943A (ja) * | 1998-12-08 | 2000-08-22 | Toyota Central Res & Dev Lab Inc | 半導体電極およびその製造方法 |
JP2004045784A (ja) * | 2002-07-12 | 2004-02-12 | Sony Corp | 液晶パネルおよびその製造方法 |
JP2007043045A (ja) * | 2005-08-03 | 2007-02-15 | Samsung Electro Mech Co Ltd | 単一指向性反射器及びこれを適用した発光素子 |
JP2008163375A (ja) * | 2006-12-27 | 2008-07-17 | Ricoh Co Ltd | 蒸着膜とこれを用いた光路偏向素子、空間光変調素子、及び投射型画像表示装置 |
Non-Patent Citations (1)
Title |
---|
JPN6013004517; Jong Kyu KIM,et al.: 'Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Ti' ADVANCED MATERIALS vol.20,no.4, 20080218, p.801-804 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011105239A1 (ja) | 2010-02-26 | 2011-09-01 | 日本曹達株式会社 | テトラゾリルオキシム誘導体またはその塩、ならびに殺菌剤 |
JP2015529854A (ja) * | 2012-08-27 | 2015-10-08 | エーブリー デニソン コーポレイションAvery Dennison Corporation | 低屈折率基材を備えた再帰反射体 |
CN103409723A (zh) * | 2013-06-29 | 2013-11-27 | 电子科技大学 | 薄膜沉积制备方法以及纳米纤维结构柔性缓冲层制备方法 |
JP2016079486A (ja) * | 2014-10-21 | 2016-05-16 | 株式会社日立製作所 | ナノオーダ構造体の製造方法および製造装置、並びにナノオーダ構造体を有する基板構造体 |
Also Published As
Publication number | Publication date |
---|---|
JP5621955B2 (ja) | 2014-11-12 |
US7998539B2 (en) | 2011-08-16 |
US20100261001A1 (en) | 2010-10-14 |
TW201007818A (en) | 2010-02-16 |
TWI372418B (en) | 2012-09-11 |
US20100040859A1 (en) | 2010-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5621955B2 (ja) | 斜め堆積を用いて生成されたナノ構造薄膜およびその方法 | |
Gil-Escrig et al. | Fully Vacuum‐Processed Perovskite Solar Cells on Pyramidal Microtextures | |
WO2009120983A2 (en) | Ultra-low reflectance broadband omni-directional anti-reflection coating | |
KR20120012555A (ko) | 점진적으로 굴절률이 변하는 실리콘 다층 무반사막 및 그 제조방법 및 이를 구비하는 태양전지 및 그 제조방법 | |
CN106068247B (zh) | 涂覆的窗玻璃 | |
US20130092230A1 (en) | Substrate comprising a transparent conductive oxide film and its manufacturing process | |
WO2011013719A1 (ja) | 太陽電池用透明導電性基板および太陽電池 | |
Wang et al. | Highly stable and efficient mesoporous and hollow silica antireflection coatings for perovskite solar cells | |
Habubi et al. | Increasing the silicon solar cell efficiency with nanostructured SnO2 anti-reflecting coating films | |
Song et al. | Antireflective grassy surface on glass substrates with self-masked dry etching | |
Song et al. | Disordered submicron structures integrated on glass substrate for broadband absorption enhancement of thin-film solar cells | |
Sood et al. | Experimental and theoretical study of the optical and electrical properties of nanostructured indium tin oxide fabricated by oblique-angle deposition | |
Druzhinin et al. | Texturing of the silicon substrate with nanopores and Si nanowires for anti-reflecting surfaces of solar cells | |
Varnamkhasti et al. | Design and fabrication of nanometric TiO2/Ag/TiO2/Ag/TiO2 transparent conductive electrode for inverted organic photovoltaic cells application | |
Markov et al. | Technique for the formation of antireflection coatings based on ITO films | |
Liu et al. | Broadband light trapping based on periodically textured ZnO thin films | |
Bou et al. | Optical role of the thin metal layer in a TiO x/Ag/TiO x transparent and conductive electrode for organic solar cells | |
KR102117945B1 (ko) | 화학기상증착법을 이용한 반사방지막 제조방법 | |
TW201500217A (zh) | 具親水性、抗反射及抗霧之多層複合薄膜及其製作方法 | |
KR20140050057A (ko) | 다공성 코팅을 구비한 반사방지 글레이징 유닛 | |
KR20210099964A (ko) | 양면 수광형 태양전지의 제조방법 및 이를 통해 제조한 양면 수광형 태양전지 | |
JP2011129288A (ja) | 透明導電膜付き基板および薄膜光電変換装置 | |
US20130130427A1 (en) | Method for increasing the translucency of a substrate | |
KR101907143B1 (ko) | 성능이 우수한 반사방지막의 제조방법 및 그에 의하여 제조된 반사방지막 | |
JP2012509602A (ja) | 多重接合光電デバイスおよびその製造プロセス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110804 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130131 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130212 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130510 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130521 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130531 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140114 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140414 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140513 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140527 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140716 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140826 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140909 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5621955 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |