TWI371850B - Capacitor-less volatile memory cell, device, system and method of making same - Google Patents

Capacitor-less volatile memory cell, device, system and method of making same

Info

Publication number
TWI371850B
TWI371850B TW097106683A TW97106683A TWI371850B TW I371850 B TWI371850 B TW I371850B TW 097106683 A TW097106683 A TW 097106683A TW 97106683 A TW97106683 A TW 97106683A TW I371850 B TWI371850 B TW I371850B
Authority
TW
Taiwan
Prior art keywords
capacitor
memory cell
volatile memory
making same
less volatile
Prior art date
Application number
TW097106683A
Other languages
English (en)
Other versions
TW200901444A (en
Inventor
Fernando Gonzalez
Chandra V Mouli
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of TW200901444A publication Critical patent/TW200901444A/zh
Application granted granted Critical
Publication of TWI371850B publication Critical patent/TWI371850B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
TW097106683A 2007-02-26 2008-02-26 Capacitor-less volatile memory cell, device, system and method of making same TWI371850B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/711,449 US7919800B2 (en) 2007-02-26 2007-02-26 Capacitor-less memory cells and cell arrays

Publications (2)

Publication Number Publication Date
TW200901444A TW200901444A (en) 2009-01-01
TWI371850B true TWI371850B (en) 2012-09-01

Family

ID=39493686

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097106683A TWI371850B (en) 2007-02-26 2008-02-26 Capacitor-less volatile memory cell, device, system and method of making same

Country Status (7)

Country Link
US (6) US7919800B2 (zh)
EP (1) EP2130228A1 (zh)
JP (1) JP5088589B2 (zh)
KR (1) KR101176706B1 (zh)
CN (1) CN101641788B (zh)
TW (1) TWI371850B (zh)
WO (1) WO2008106358A1 (zh)

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US9105707B2 (en) 2013-07-24 2015-08-11 International Business Machines Corporation ZRAM heterochannel memory
US10347656B2 (en) * 2016-07-18 2019-07-09 Semiconductor Components Industries, Llc Semiconductor device and monolithic semiconductor device including a power semiconductor device and a control circuit
EP3688805A4 (en) 2017-09-29 2021-04-14 INTEL Corporation VERTICAL BACKEND TRANSISTOR WITH FERROELECTRIC MATERIAL
US10825931B2 (en) * 2018-02-13 2020-11-03 Nanya Technology Corporation Semiconductor device with undercutted-gate and method of fabricating the same
US10374033B1 (en) * 2018-03-08 2019-08-06 Micron Technology, Inc. Semiconductor assemblies having semiconductor material regions with contoured upper surfaces
US11888034B2 (en) 2019-06-07 2024-01-30 Intel Corporation Transistors with metal chalcogenide channel materials
US11777029B2 (en) 2019-06-27 2023-10-03 Intel Corporation Vertical transistors for ultra-dense logic and memory applications
US11171243B2 (en) 2019-06-27 2021-11-09 Intel Corporation Transistor structures with a metal oxide contact buffer
EP3916760B1 (en) * 2020-05-28 2024-07-03 Imec VZW A method for producing an undercut in a 300 mm silicon-on-insulator platform
US11646372B2 (en) 2020-09-19 2023-05-09 International Business Machines Corporation Vertical transistor floating body one transistor DRAM memory cell
US11742306B2 (en) * 2021-01-07 2023-08-29 Micron Technology, Inc. Layouts for pads and conductive lines of memory devices, and related devices, systems, and methods
JP7381145B2 (ja) * 2021-04-06 2023-11-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド メモリ素子を有する半導体装置
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Also Published As

Publication number Publication date
US20140036584A1 (en) 2014-02-06
KR101176706B1 (ko) 2012-08-23
US8203866B2 (en) 2012-06-19
US8582350B2 (en) 2013-11-12
US20130252390A1 (en) 2013-09-26
KR20090118967A (ko) 2009-11-18
US8724372B2 (en) 2014-05-13
US7919800B2 (en) 2011-04-05
US20080205133A1 (en) 2008-08-28
JP5088589B2 (ja) 2012-12-05
US20110170364A1 (en) 2011-07-14
CN101641788B (zh) 2012-08-08
JP2010519770A (ja) 2010-06-03
WO2008106358A1 (en) 2008-09-04
US9293185B2 (en) 2016-03-22
US20140219017A1 (en) 2014-08-07
US8451650B2 (en) 2013-05-28
US20120258577A1 (en) 2012-10-11
EP2130228A1 (en) 2009-12-09
CN101641788A (zh) 2010-02-03
TW200901444A (en) 2009-01-01

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