TWI370545B - Magnetic tunnel junction and method of forming free synthetic antiferromagnet therein - Google Patents

Magnetic tunnel junction and method of forming free synthetic antiferromagnet therein

Info

Publication number
TWI370545B
TWI370545B TW093138819A TW93138819A TWI370545B TW I370545 B TWI370545 B TW I370545B TW 093138819 A TW093138819 A TW 093138819A TW 93138819 A TW93138819 A TW 93138819A TW I370545 B TWI370545 B TW I370545B
Authority
TW
Taiwan
Prior art keywords
tunnel junction
magnetic tunnel
forming free
free synthetic
synthetic antiferromagnet
Prior art date
Application number
TW093138819A
Other languages
English (en)
Chinese (zh)
Other versions
TW200532914A (en
Inventor
Srinivas V Pietambaram
Renu W Dave
Jon M Slaughter
Jijun Sun
Original Assignee
Everspin Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Everspin Technologies Inc filed Critical Everspin Technologies Inc
Publication of TW200532914A publication Critical patent/TW200532914A/zh
Application granted granted Critical
Publication of TWI370545B publication Critical patent/TWI370545B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
TW093138819A 2003-12-18 2004-12-14 Magnetic tunnel junction and method of forming free synthetic antiferromagnet therein TWI370545B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/740,338 US6946697B2 (en) 2003-12-18 2003-12-18 Synthetic antiferromagnet structures for use in MTJs in MRAM technology

Publications (2)

Publication Number Publication Date
TW200532914A TW200532914A (en) 2005-10-01
TWI370545B true TWI370545B (en) 2012-08-11

Family

ID=34677853

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093138819A TWI370545B (en) 2003-12-18 2004-12-14 Magnetic tunnel junction and method of forming free synthetic antiferromagnet therein

Country Status (7)

Country Link
US (2) US6946697B2 (https=)
EP (1) EP1697996A2 (https=)
JP (1) JP4908227B2 (https=)
KR (1) KR101122970B1 (https=)
CN (1) CN100495723C (https=)
TW (1) TWI370545B (https=)
WO (1) WO2005067472A2 (https=)

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Also Published As

Publication number Publication date
EP1697996A2 (en) 2006-09-06
WO2005067472A3 (en) 2006-03-02
JP4908227B2 (ja) 2012-04-04
US6946697B2 (en) 2005-09-20
WO2005067472A2 (en) 2005-07-28
KR20070001912A (ko) 2007-01-04
TW200532914A (en) 2005-10-01
CN100495723C (zh) 2009-06-03
CN1894801A (zh) 2007-01-10
JP2007515075A (ja) 2007-06-07
US20050133840A1 (en) 2005-06-23
US20050247964A1 (en) 2005-11-10
US7226796B2 (en) 2007-06-05
KR101122970B1 (ko) 2012-03-15

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