TWI370491B - - Google Patents

Info

Publication number
TWI370491B
TWI370491B TW096148062A TW96148062A TWI370491B TW I370491 B TWI370491 B TW I370491B TW 096148062 A TW096148062 A TW 096148062A TW 96148062 A TW96148062 A TW 96148062A TW I370491 B TWI370491 B TW I370491B
Authority
TW
Taiwan
Application number
TW096148062A
Other versions
TW200845183A (en
Inventor
Akio Ui
Takashi Ichikawa
Naoki Tamaoki
Hisataka Hayashi
Akihiro Kojima
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200845183A publication Critical patent/TW200845183A/zh
Application granted granted Critical
Publication of TWI370491B publication Critical patent/TWI370491B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
TW096148062A 2007-03-27 2007-12-14 Plasma processing apparatus of substrate and plasma processing method thereof TW200845183A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007082014A JP4660498B2 (ja) 2007-03-27 2007-03-27 基板のプラズマ処理装置

Publications (2)

Publication Number Publication Date
TW200845183A TW200845183A (en) 2008-11-16
TWI370491B true TWI370491B (zh) 2012-08-11

Family

ID=39792446

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096148062A TW200845183A (en) 2007-03-27 2007-12-14 Plasma processing apparatus of substrate and plasma processing method thereof

Country Status (5)

Country Link
US (1) US8252193B2 (zh)
JP (1) JP4660498B2 (zh)
KR (1) KR20080087635A (zh)
CN (1) CN101277580B (zh)
TW (1) TW200845183A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10428229B2 (en) 2017-12-28 2019-10-01 Industrial Technology Research Institute Aqueous coating material and method for manufacturing the same

Families Citing this family (14)

* Cited by examiner, † Cited by third party
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JP4592867B2 (ja) * 2000-03-27 2010-12-08 株式会社半導体エネルギー研究所 平行平板形プラズマｃｖｄ装置及びドライクリーニングの方法
JP5224837B2 (ja) * 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
JP5295833B2 (ja) 2008-09-24 2013-09-18 株式会社東芝 基板処理装置および基板処理方法
JP5375745B2 (ja) * 2010-06-02 2013-12-25 富士電機株式会社 試験装置および試験方法
JP5172928B2 (ja) 2010-09-30 2013-03-27 株式会社東芝 基板処理方法および基板処理装置
JP2012104382A (ja) * 2010-11-10 2012-05-31 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法
JP6207880B2 (ja) * 2012-09-26 2017-10-04 東芝メモリ株式会社 プラズマ処理装置およびプラズマ処理方法
KR102476353B1 (ko) 2016-07-26 2022-12-09 삼성전자주식회사 반도체 설비의 설정 파형 발생기, 플라즈마 처리 장치, 플라즈마 처리 장치의 제어 방법 및 반도체 장치의 제조 방법
US10424467B2 (en) * 2017-03-13 2019-09-24 Applied Materials, Inc. Smart RF pulsing tuning using variable frequency generators
JP7238191B2 (ja) * 2018-04-27 2023-03-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7061922B2 (ja) * 2018-04-27 2022-05-02 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11189462B1 (en) * 2020-07-21 2021-11-30 Tokyo Electron Limited Ion stratification using bias pulses of short duration
US20220399185A1 (en) * 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
JP7412620B2 (ja) * 2022-04-18 2024-01-12 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置

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US4661203A (en) * 1985-06-28 1987-04-28 Control Data Corporation Low defect etching of patterns using plasma-stencil mask
JPS62111429A (ja) * 1985-11-11 1987-05-22 Hitachi Ltd ドライエツチング装置
JP3339597B2 (ja) * 1993-09-03 2002-10-28 アネルバ株式会社 プラズマ処理方法およびプラズマ処理装置
US5701055A (en) * 1994-03-13 1997-12-23 Pioneer Electronic Corporation Organic electoluminescent display panel and method for manufacturing the same
JP3901719B2 (ja) 1995-03-13 2007-04-04 パイオニア株式会社 有機エレクトロルミネッセンスディスプレイパネルとその製造方法
US5952037A (en) * 1995-03-13 1999-09-14 Pioneer Electronic Corporation Organic electroluminescent display panel and method for manufacturing the same
JPH09129621A (ja) * 1995-09-28 1997-05-16 Applied Materials Inc パルス波形バイアス電力
US6902683B1 (en) * 1996-03-01 2005-06-07 Hitachi, Ltd. Plasma processing apparatus and plasma processing method
JP3499104B2 (ja) * 1996-03-01 2004-02-23 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP3319285B2 (ja) 1996-06-05 2002-08-26 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US6187685B1 (en) * 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
JP2000156370A (ja) * 1998-09-16 2000-06-06 Tokyo Electron Ltd プラズマ処理方法
US6642149B2 (en) * 1998-09-16 2003-11-04 Tokyo Electron Limited Plasma processing method
JP4163857B2 (ja) * 1998-11-04 2008-10-08 サーフィス テクノロジー システムズ ピーエルシー 基板をエッチングするための方法と装置
DE19919832A1 (de) * 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
JP3774115B2 (ja) * 2000-11-21 2006-05-10 住友精密工業株式会社 シリコンの異方性エッチング方法及び装置
JP4112821B2 (ja) * 2001-06-01 2008-07-02 松下電器産業株式会社 プラズマ処理方法およびプラズマ処理装置
US20050103441A1 (en) * 2001-11-14 2005-05-19 Masanobu Honda Etching method and plasma etching apparatus
JP2003234331A (ja) 2001-12-05 2003-08-22 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
JP4377698B2 (ja) * 2002-04-08 2009-12-02 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP4431402B2 (ja) * 2002-04-08 2010-03-17 東京エレクトロン株式会社 プラズマエッチング方法
JP4471877B2 (ja) * 2004-03-25 2010-06-02 独立行政法人科学技術振興機構 プラズマ表面処理方法
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7851367B2 (en) * 2006-08-31 2010-12-14 Kabushiki Kaisha Toshiba Method for plasma processing a substrate
JP2008060429A (ja) * 2006-08-31 2008-03-13 Toshiba Corp 基板のプラズマ処理装置及びプラズマ処理方法
JP4714166B2 (ja) * 2006-08-31 2011-06-29 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10428229B2 (en) 2017-12-28 2019-10-01 Industrial Technology Research Institute Aqueous coating material and method for manufacturing the same

Also Published As

Publication number Publication date
JP4660498B2 (ja) 2011-03-30
US8252193B2 (en) 2012-08-28
US20080237185A1 (en) 2008-10-02
KR20080087635A (ko) 2008-10-01
CN101277580A (zh) 2008-10-01
CN101277580B (zh) 2013-01-02
TW200845183A (en) 2008-11-16
JP2008243568A (ja) 2008-10-09

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