TWI370184B - Epitaxial wafer and method of producing same - Google Patents
Epitaxial wafer and method of producing sameInfo
- Publication number
- TWI370184B TWI370184B TW096133147A TW96133147A TWI370184B TW I370184 B TWI370184 B TW I370184B TW 096133147 A TW096133147 A TW 096133147A TW 96133147 A TW96133147 A TW 96133147A TW I370184 B TWI370184 B TW I370184B
- Authority
- TW
- Taiwan
- Prior art keywords
- epitaxial wafer
- producing same
- producing
- same
- epitaxial
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/005—Oxydation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006240962 | 2006-09-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200831720A TW200831720A (en) | 2008-08-01 |
TWI370184B true TWI370184B (en) | 2012-08-11 |
Family
ID=38668852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096133147A TWI370184B (en) | 2006-09-06 | 2007-09-04 | Epitaxial wafer and method of producing same |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1900858B1 (zh) |
KR (1) | KR100925359B1 (zh) |
CN (1) | CN101140868B (zh) |
DE (1) | DE07017349T1 (zh) |
TW (1) | TWI370184B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5479390B2 (ja) | 2011-03-07 | 2014-04-23 | 信越半導体株式会社 | シリコンウェーハの製造方法 |
KR101235419B1 (ko) * | 2011-05-26 | 2013-02-20 | 주식회사 엘지실트론 | 에피택셜 웨이퍼의 표면 처리방법 |
JP6312976B2 (ja) | 2012-06-12 | 2018-04-18 | Sumco Techxiv株式会社 | 半導体ウェーハの製造方法 |
CN104576350B (zh) * | 2013-10-23 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | 晶圆减薄方法 |
JP6157381B2 (ja) * | 2014-03-04 | 2017-07-05 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ |
JP6380582B1 (ja) * | 2017-03-08 | 2018-08-29 | 株式会社Sumco | エピタキシャルウェーハの裏面検査方法、エピタキシャルウェーハ裏面検査装置、エピタキシャル成長装置のリフトピン管理方法およびエピタキシャルウェーハの製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0817163B2 (ja) * | 1990-04-12 | 1996-02-21 | 株式会社東芝 | エピタキシャルウェーハの製造方法 |
US5837662A (en) * | 1997-12-12 | 1998-11-17 | Memc Electronic Materials, Inc. | Post-lapping cleaning process for silicon wafers |
JP3319397B2 (ja) * | 1998-07-07 | 2002-08-26 | 信越半導体株式会社 | 半導体製造装置およびこれを用いたエピタキシャルウェーハの製造方法 |
JP2000077372A (ja) * | 1998-08-31 | 2000-03-14 | Sumitomo Metal Ind Ltd | 気相成長用半導体ウェーハの製造方法 |
JP3888416B2 (ja) * | 2000-03-09 | 2007-03-07 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法及びシリコンエピタキシャルウェーハ |
JP2006100799A (ja) * | 2004-09-06 | 2006-04-13 | Sumco Corp | シリコンウェーハの製造方法 |
CN1779909A (zh) * | 2004-11-25 | 2006-05-31 | 中国科学院半导体研究所 | 制备绝缘体上锗硅薄膜材料的方法 |
JP5023900B2 (ja) * | 2006-09-05 | 2012-09-12 | 株式会社Sumco | エピタキシャルシリコンウェーハ |
-
2007
- 2007-09-04 TW TW096133147A patent/TWI370184B/zh active
- 2007-09-04 KR KR1020070089585A patent/KR100925359B1/ko active IP Right Grant
- 2007-09-04 CN CN2007101482675A patent/CN101140868B/zh active Active
- 2007-09-05 DE DE07017349T patent/DE07017349T1/de active Pending
- 2007-09-05 EP EP07017349.7A patent/EP1900858B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN101140868B (zh) | 2010-06-09 |
EP1900858A1 (en) | 2008-03-19 |
CN101140868A (zh) | 2008-03-12 |
EP1900858B1 (en) | 2019-02-27 |
KR100925359B1 (ko) | 2009-11-09 |
DE07017349T1 (de) | 2008-07-31 |
TW200831720A (en) | 2008-08-01 |
KR20080022511A (ko) | 2008-03-11 |
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