TWI369386B - Multi-step polishing solution for chemical mechanical planarization - Google Patents
Multi-step polishing solution for chemical mechanical planarizationInfo
- Publication number
- TWI369386B TWI369386B TW094104905A TW94104905A TWI369386B TW I369386 B TWI369386 B TW I369386B TW 094104905 A TW094104905 A TW 094104905A TW 94104905 A TW94104905 A TW 94104905A TW I369386 B TWI369386 B TW I369386B
- Authority
- TW
- Taiwan
- Prior art keywords
- chemical mechanical
- mechanical planarization
- polishing solution
- step polishing
- planarization
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V1/00—Shades for light sources, i.e. lampshades for table, floor, wall or ceiling lamps
- F21V1/12—Composite shades, i.e. shades being made of distinct parts
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V1/00—Shades for light sources, i.e. lampshades for table, floor, wall or ceiling lamps
- F21V1/14—Covers for frames; Frameless shades
- F21V1/16—Covers for frames; Frameless shades characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/785,362 US6971945B2 (en) | 2004-02-23 | 2004-02-23 | Multi-step polishing solution for chemical mechanical planarization |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200532000A TW200532000A (en) | 2005-10-01 |
TWI369386B true TWI369386B (en) | 2012-08-01 |
Family
ID=34911447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094104905A TWI369386B (en) | 2004-02-23 | 2005-02-18 | Multi-step polishing solution for chemical mechanical planarization |
Country Status (5)
Country | Link |
---|---|
US (1) | US6971945B2 (zh) |
JP (1) | JP4774219B2 (zh) |
KR (1) | KR101095399B1 (zh) |
CN (1) | CN1324105C (zh) |
TW (1) | TWI369386B (zh) |
Families Citing this family (52)
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US7462590B2 (en) * | 2005-02-25 | 2008-12-09 | Solutions Biomed, Llc | Aqueous disinfectants and sterilants comprising a peroxide/peracid/transition metal mixture |
US7553805B2 (en) * | 2005-02-25 | 2009-06-30 | Solutions Biomed, Llc | Methods and compositions for treating viral, fungal, and bacterial infections |
US7507701B2 (en) * | 2005-02-25 | 2009-03-24 | Solutions Biomed, Llc | Aqueous disinfectants and sterilants including transition metals |
WO2006093792A1 (en) * | 2005-02-25 | 2006-09-08 | Solutions Biomed, Llc | Aqueous disinfectants and sterilants |
US7511007B2 (en) * | 2005-02-25 | 2009-03-31 | Solutions Biomed, Llc | Aqueous sanitizers, disinfectants, and/or sterilants with low peroxygen content |
US7504369B2 (en) * | 2005-02-25 | 2009-03-17 | Solutions Biomed, Llc | Methods and compositions for decontaminating surfaces exposed to chemical and/or biological warfare compounds |
US7473675B2 (en) * | 2005-02-25 | 2009-01-06 | Solutions Biomed, Llc | Disinfectant systems and methods comprising a peracid, alcohol, and transition metal |
US7534756B2 (en) * | 2005-02-25 | 2009-05-19 | Solutions Biomed, Llc | Devices, systems, and methods for dispensing disinfectant solutions comprising a peroxygen and transition metal |
KR100712879B1 (ko) | 2005-04-06 | 2007-04-30 | 주식회사 잉크테크 | 에칭액 조성물 |
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JP5030431B2 (ja) * | 2006-02-08 | 2012-09-19 | 富士フイルム株式会社 | 研磨用組成物 |
JP4920272B2 (ja) * | 2006-03-06 | 2012-04-18 | 富士フイルム株式会社 | 金属用研磨液、及び化学的機械的研磨方法 |
JP2007208216A (ja) * | 2006-02-06 | 2007-08-16 | Fujifilm Corp | 金属用研磨液及びそれを用いた研磨方法 |
US7842192B2 (en) * | 2006-02-08 | 2010-11-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Multi-component barrier polishing solution |
JP2007220759A (ja) * | 2006-02-14 | 2007-08-30 | Fujifilm Corp | 金属用研磨液及びそれを用いた化学的機械的研磨方法 |
US20070209287A1 (en) * | 2006-03-13 | 2007-09-13 | Cabot Microelectronics Corporation | Composition and method to polish silicon nitride |
US8759216B2 (en) * | 2006-06-07 | 2014-06-24 | Cabot Microelectronics Corporation | Compositions and methods for polishing silicon nitride materials |
US7538969B2 (en) * | 2006-08-23 | 2009-05-26 | Imation Corp. | Servo pattern with encoded data |
CN101153205A (zh) * | 2006-09-29 | 2008-04-02 | 安集微电子(上海)有限公司 | 用于抛光低介电材料的化学机械抛光液 |
DE102006061891A1 (de) * | 2006-12-28 | 2008-07-03 | Basf Se | Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid |
JP4614981B2 (ja) * | 2007-03-22 | 2011-01-19 | Jsr株式会社 | 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法 |
US20090001339A1 (en) * | 2007-06-29 | 2009-01-01 | Tae Young Lee | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same |
WO2009032203A1 (en) * | 2007-08-30 | 2009-03-12 | Solutions Biomed, Llc | Colloidal metal-containing skin sanitizer |
CN101418191B (zh) * | 2007-10-26 | 2013-10-02 | 安集微电子(上海)有限公司 | 一种金属铜的抛光液 |
CN101418190B (zh) * | 2007-10-26 | 2013-10-02 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
WO2009114754A1 (en) * | 2008-03-14 | 2009-09-17 | Solutions Biomed, Llc | Multi-chamber container system for storing and mixing fluids |
JP5429169B2 (ja) * | 2008-08-06 | 2014-02-26 | 日立化成株式会社 | Cmp研磨液及びこのcmp研磨液を用いた基板の研磨方法 |
CN101684392B (zh) * | 2008-09-26 | 2015-01-28 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
WO2010056881A1 (en) * | 2008-11-12 | 2010-05-20 | Solutions Biomed, Llc | Multi-chamber container system for storing and mixing liquids |
US20100120913A1 (en) * | 2008-11-12 | 2010-05-13 | Larson Brian G | Resin catalyzed and stabilized peracid compositions and associated methods |
WO2010056871A2 (en) * | 2008-11-12 | 2010-05-20 | Solutions Biomed, Llc | Two-part disinfectant system and related methods |
KR101279962B1 (ko) * | 2008-12-18 | 2013-07-05 | 제일모직주식회사 | 금속 배선 연마용 cmp 슬러리 조성물 |
KR101380098B1 (ko) | 2009-07-16 | 2014-04-01 | 히타치가세이가부시끼가이샤 | 팔라듐 연마용 cmp 연마액 및 연마 방법 |
CN102051129B (zh) * | 2009-11-06 | 2014-09-24 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
WO2012009959A1 (zh) * | 2010-07-21 | 2012-01-26 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
CN102477258B (zh) * | 2010-11-26 | 2015-05-27 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
CN102533121B (zh) * | 2010-12-27 | 2016-01-27 | 安集微电子(上海)有限公司 | 一种抛光钨的化学机械抛光液 |
TWI593791B (zh) * | 2011-01-25 | 2017-08-01 | 日立化成股份有限公司 | Cmp研磨液及其製造方法、複合粒子的製造方法以及基體的研磨方法 |
CN102358824B (zh) * | 2011-07-29 | 2013-08-21 | 清华大学 | 一种用于硬盘盘基片超精密表面制造的抛光组合物 |
JP6093846B2 (ja) | 2013-02-28 | 2017-03-08 | 株式会社フジミインコーポレーテッド | コバルト除去のための研磨スラリー |
US10745589B2 (en) * | 2016-06-16 | 2020-08-18 | Versum Materials Us, Llc | Chemical mechanical polishing (CMP) of cobalt-containing substrate |
US10853814B2 (en) * | 2017-04-03 | 2020-12-01 | Mastercard International Incorporated | Systems and methods for monitoring attendance of persons via payment networks |
KR102611598B1 (ko) * | 2017-04-27 | 2023-12-08 | 주식회사 동진쎄미켐 | 화학-기계적 연마용 슬러리 조성물 |
CN107286908A (zh) * | 2017-06-22 | 2017-10-24 | 合肥汇之新机械科技有限公司 | 一种工业机器人用的耐高温研磨剂及其制备方法 |
CN109623581A (zh) * | 2019-01-04 | 2019-04-16 | 芜湖启迪半导体有限公司 | 一种硬质材料的表面抛光方法 |
CN111826089B (zh) * | 2020-07-28 | 2021-09-28 | 河北工业大学 | Glsi多层布线高价金属在cmp中的应用 |
CN112210779B (zh) * | 2020-09-29 | 2022-10-11 | 九牧厨卫股份有限公司 | 一种双梯度抛光方法及其应用 |
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US4674236A (en) * | 1985-05-13 | 1987-06-23 | Toshiba Machine Co., Ltd. | Polishing machine and method of attaching emery cloth to the polishing machine |
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JP2850803B2 (ja) * | 1995-08-01 | 1999-01-27 | 信越半導体株式会社 | ウエーハ研磨方法 |
US5780358A (en) * | 1996-04-08 | 1998-07-14 | Chartered Semiconductor Manufacturing Ltd. | Method for chemical-mechanical polish (CMP) planarizing of cooper containing conductor layers |
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KR100473442B1 (ko) | 1998-10-23 | 2005-03-08 | 아치 스페셜티 케미칼즈, 인코포레이티드 | 금속층의 화학적 기계적 연마를 위한 활성제, 활성제 용액, 슬러리 시스템 및 연마방법 |
US6261158B1 (en) * | 1998-12-16 | 2001-07-17 | Speedfam-Ipec | Multi-step chemical mechanical polishing |
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TW499471B (en) * | 1999-09-01 | 2002-08-21 | Eternal Chemical Co Ltd | Chemical mechanical/abrasive composition for semiconductor processing |
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JP2001187876A (ja) * | 1999-12-28 | 2001-07-10 | Nec Corp | 化学的機械的研磨用スラリー |
US6355075B1 (en) * | 2000-02-11 | 2002-03-12 | Fujimi Incorporated | Polishing composition |
US6602117B1 (en) * | 2000-08-30 | 2003-08-05 | Micron Technology, Inc. | Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
KR100398141B1 (ko) | 2000-10-12 | 2003-09-13 | 아남반도체 주식회사 | 화학적 기계적 연마 슬러리 조성물 및 이를 이용한반도체소자의 제조방법 |
US6899804B2 (en) * | 2001-12-21 | 2005-05-31 | Applied Materials, Inc. | Electrolyte composition and treatment for electrolytic chemical mechanical polishing |
JP2003286477A (ja) * | 2002-03-28 | 2003-10-10 | Sumitomo Bakelite Co Ltd | 研磨用組成物並びに研磨方法 |
US7300602B2 (en) * | 2003-01-23 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier metal polishing solution |
US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
US7300603B2 (en) * | 2003-08-05 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers |
US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
-
2004
- 2004-02-23 US US10/785,362 patent/US6971945B2/en not_active Expired - Fee Related
-
2005
- 2005-02-18 TW TW094104905A patent/TWI369386B/zh active
- 2005-02-22 KR KR1020050014544A patent/KR101095399B1/ko active IP Right Grant
- 2005-02-22 CN CNB2005100717960A patent/CN1324105C/zh active Active
- 2005-02-23 JP JP2005046449A patent/JP4774219B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP4774219B2 (ja) | 2011-09-14 |
KR20060043069A (ko) | 2006-05-15 |
CN1324105C (zh) | 2007-07-04 |
KR101095399B1 (ko) | 2011-12-16 |
CN1721493A (zh) | 2006-01-18 |
TW200532000A (en) | 2005-10-01 |
US6971945B2 (en) | 2005-12-06 |
US20050194357A1 (en) | 2005-09-08 |
JP2005277399A (ja) | 2005-10-06 |
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