TWI366226B - Verfahren zum schleifen von halbleiterscheiben - Google Patents

Verfahren zum schleifen von halbleiterscheiben

Info

Publication number
TWI366226B
TWI366226B TW097124732A TW97124732A TWI366226B TW I366226 B TWI366226 B TW I366226B TW 097124732 A TW097124732 A TW 097124732A TW 97124732 A TW97124732 A TW 97124732A TW I366226 B TWI366226 B TW I366226B
Authority
TW
Taiwan
Prior art keywords
halbleiterscheiben
verfahren zum
zum schleifen
von
schleifen von
Prior art date
Application number
TW097124732A
Other languages
English (en)
Other versions
TW200903620A (en
Inventor
Joachim Junge
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of TW200903620A publication Critical patent/TW200903620A/zh
Application granted granted Critical
Publication of TWI366226B publication Critical patent/TWI366226B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
    • B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW097124732A 2007-07-04 2008-07-01 Verfahren zum schleifen von halbleiterscheiben TWI366226B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007030958.0A DE102007030958B4 (de) 2007-07-04 2007-07-04 Verfahren zum Schleifen von Halbleiterscheiben

Publications (2)

Publication Number Publication Date
TW200903620A TW200903620A (en) 2009-01-16
TWI366226B true TWI366226B (en) 2012-06-11

Family

ID=40092363

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097124732A TWI366226B (en) 2007-07-04 2008-07-01 Verfahren zum schleifen von halbleiterscheiben

Country Status (7)

Country Link
US (1) US7666064B2 (zh)
JP (1) JP4921430B2 (zh)
KR (1) KR101005245B1 (zh)
CN (1) CN101337336B (zh)
DE (1) DE102007030958B4 (zh)
SG (1) SG148968A1 (zh)
TW (1) TWI366226B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009048436B4 (de) * 2009-10-07 2012-12-20 Siltronic Ag Verfahren zum Schleifen einer Halbleiterscheibe
US8712575B2 (en) * 2010-03-26 2014-04-29 Memc Electronic Materials, Inc. Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder
JP5851803B2 (ja) * 2011-03-18 2016-02-03 光洋機械工業株式会社 薄板状ワークの研削方法及び両頭平面研削盤
JP6088803B2 (ja) 2012-11-16 2017-03-01 株式会社日立ハイテクノロジーズ 画像処理装置、自己組織化リソグラフィ技術によるパターン生成方法、及びコンピュータープログラム
JP6117030B2 (ja) 2013-07-08 2017-04-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 飛散板、研削ホイール、および、研削装置
DE102017215705A1 (de) 2017-09-06 2019-03-07 Siltronic Ag Vorrichtung und Verfahren zum doppelseitigen Schleifen von Halbleiterscheiben
CN112512656A (zh) 2018-05-30 2021-03-16 加利福尼亚大学董事会 用于组织和细胞聚集体解离及单细胞富集的微流体过滤装置及方法
CN109483347B (zh) * 2018-10-26 2021-09-17 衡东县华辉水泥制品有限公司 一种废旧实心砖截断面修整设备
JP7159861B2 (ja) * 2018-12-27 2022-10-25 株式会社Sumco 両頭研削方法
CN111360608B (zh) * 2020-03-06 2021-08-27 徐州鑫晶半导体科技有限公司 双面减薄研削水流量的控制方法
EP3900876B1 (de) * 2020-04-23 2024-05-01 Siltronic AG Verfahren zum schleifen einer halbleiterscheibe
EP4144480B1 (de) 2021-09-01 2024-01-31 Siltronic AG Verfahren zum schleifen von halbleiterscheiben
CN118024057B (zh) * 2024-04-15 2024-06-07 东莞市鼎力自动化科技有限公司 一种防压损的晶圆片双面研磨机

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143948A (ja) * 1982-02-19 1983-08-26 Hitachi Ltd ウエハ研削装置
AU637087B2 (en) * 1989-03-24 1993-05-20 Sumitomo Electric Industries, Ltd. Apparatus for grinding semiconductor wafer
JP2674665B2 (ja) * 1989-03-24 1997-11-12 住友電気工業株式会社 半導体ウェーハの研削装置
JPH0637075A (ja) * 1992-07-17 1994-02-10 Hitachi Ltd 砥石を用いる加工方法
US6296553B1 (en) * 1997-04-02 2001-10-02 Nippei Toyama Corporation Grinding method, surface grinder, workpiece support, mechanism and work rest
JPH11154655A (ja) * 1997-11-21 1999-06-08 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
JP3244072B2 (ja) * 1998-09-09 2002-01-07 豊田工機株式会社 研削加工における冷却方法
JP3664593B2 (ja) * 1998-11-06 2005-06-29 信越半導体株式会社 半導体ウエーハおよびその製造方法
US6240942B1 (en) * 1999-05-13 2001-06-05 Micron Technology, Inc. Method for conserving a resource by flow interruption
MXPA02004140A (es) * 1999-10-27 2002-10-11 Unova Uk Ltd Metodo para rectificar munones de ciguenal.
JP2002187062A (ja) * 2000-12-22 2002-07-02 Toshiba Mach Co Ltd 平面研磨装置、平面研磨方法及びそれに使用される砥石
DE10142400B4 (de) * 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
US7727054B2 (en) * 2002-07-26 2010-06-01 Saint-Gobain Abrasives, Inc. Coherent jet nozzles for grinding applications
JP2004097551A (ja) * 2002-09-10 2004-04-02 Sumitomo Rubber Ind Ltd ゴルフクラブヘッド
JP2004202630A (ja) * 2002-12-25 2004-07-22 Shin Etsu Handotai Co Ltd 研磨布の形状測定方法及び被加工物の研磨方法、並びに研磨布の形状測定装置
DE102004005702A1 (de) * 2004-02-05 2005-09-01 Siltronic Ag Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe
DE102005012446B4 (de) * 2005-03-17 2017-11-30 Siltronic Ag Verfahren zur Material abtragenden Bearbeitung einer Halbleiterscheibe

Also Published As

Publication number Publication date
JP4921430B2 (ja) 2012-04-25
JP2009016842A (ja) 2009-01-22
US20090011683A1 (en) 2009-01-08
SG148968A1 (en) 2009-01-29
CN101337336A (zh) 2009-01-07
KR101005245B1 (ko) 2011-01-04
TW200903620A (en) 2009-01-16
DE102007030958A1 (de) 2009-01-08
DE102007030958B4 (de) 2014-09-11
US7666064B2 (en) 2010-02-23
CN101337336B (zh) 2010-09-29
KR20090004513A (ko) 2009-01-12

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