TWI366068B - Hardmask composition for processing resist underlayer film, process for producing semiconductor integrated circuit device using the hardmask composition, and semiconductor integrated circuit device produced by the process - Google Patents

Hardmask composition for processing resist underlayer film, process for producing semiconductor integrated circuit device using the hardmask composition, and semiconductor integrated circuit device produced by the process

Info

Publication number
TWI366068B
TWI366068B TW096144078A TW96144078A TWI366068B TW I366068 B TWI366068 B TW I366068B TW 096144078 A TW096144078 A TW 096144078A TW 96144078 A TW96144078 A TW 96144078A TW I366068 B TWI366068 B TW I366068B
Authority
TW
Taiwan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
hardmask composition
underlayer film
Prior art date
Application number
TW096144078A
Other languages
English (en)
Chinese (zh)
Other versions
TW200832060A (en
Inventor
Mi Young Kim
Sang Kyun Kim
Sang Hak Lim
Sang Ran Koh
Hui Chan Yun
Do Hyeon Kim
Dong Seon Uh
Jong Seob Kim
Original Assignee
Cheil Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cheil Ind Inc filed Critical Cheil Ind Inc
Publication of TW200832060A publication Critical patent/TW200832060A/zh
Application granted granted Critical
Publication of TWI366068B publication Critical patent/TWI366068B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW096144078A 2006-11-21 2007-11-21 Hardmask composition for processing resist underlayer film, process for producing semiconductor integrated circuit device using the hardmask composition, and semiconductor integrated circuit device produced by the process TWI366068B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060115411A KR100796047B1 (ko) 2006-11-21 2006-11-21 레지스트 하층막용 하드마스크 조성물, 이를 이용한 반도체집적회로 디바이스의 제조방법 및 그로부터 제조된 반도체집적회로 디바이스

Publications (2)

Publication Number Publication Date
TW200832060A TW200832060A (en) 2008-08-01
TWI366068B true TWI366068B (en) 2012-06-11

Family

ID=39218552

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096144078A TWI366068B (en) 2006-11-21 2007-11-21 Hardmask composition for processing resist underlayer film, process for producing semiconductor integrated circuit device using the hardmask composition, and semiconductor integrated circuit device produced by the process

Country Status (7)

Country Link
US (1) US8273519B2 (https=)
EP (1) EP2095188B1 (https=)
JP (1) JP5271274B2 (https=)
KR (1) KR100796047B1 (https=)
CN (1) CN101490621B (https=)
TW (1) TWI366068B (https=)
WO (1) WO2008063016A1 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100894417B1 (ko) * 2007-09-06 2009-04-24 제일모직주식회사 갭 필 능력이 개선된 반도체 미세 갭 필용 유기실란계중합체 및 이를 이용한 반도체 미세 갭 필용 조성물
EP2071400A1 (en) * 2007-11-12 2009-06-17 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
KR100930672B1 (ko) * 2008-01-11 2009-12-09 제일모직주식회사 실리콘계 하드마스크 조성물 및 이를 이용한 반도체집적회로 디바이스의 제조방법
JP5136439B2 (ja) * 2008-11-28 2013-02-06 Ｊｓｒ株式会社 多層レジストプロセス用シリコン含有膜形成用組成物及びシリコン含有膜並びにパターン形成方法
KR101288572B1 (ko) * 2008-12-17 2013-07-22 제일모직주식회사 보관안정성이 우수한 레지스트 하층막용 하드마스크 조성물
KR101266290B1 (ko) * 2008-12-30 2013-05-22 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
KR101266291B1 (ko) * 2008-12-30 2013-05-22 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로디바이스의 제조방법
KR101354637B1 (ko) * 2009-12-30 2014-01-22 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
KR101344795B1 (ko) * 2009-12-31 2013-12-26 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
KR20110079202A (ko) * 2009-12-31 2011-07-07 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
KR101344794B1 (ko) 2009-12-31 2014-01-16 제일모직주식회사 레지스트 하층막용 방향족 고리 함유 중합체　및　이를 포함하는 레지스트 하층막 조성물
KR101400182B1 (ko) 2009-12-31 2014-05-27 제일모직 주식회사 포토레지스트 하층막용 조성물 및 이를 이용하는 반도체 소자의 제조 방법
US8980751B2 (en) * 2010-01-27 2015-03-17 Canon Nanotechnologies, Inc. Methods and systems of material removal and pattern transfer
JP5765298B2 (ja) * 2010-09-09 2015-08-19 Jsr株式会社 レジストパターン形成方法
JP5518772B2 (ja) 2011-03-15 2014-06-11 信越化学工業株式会社 パターン形成方法
US8647809B2 (en) 2011-07-07 2014-02-11 Brewer Science Inc. Metal-oxide films from small molecules for lithographic applications
KR101432607B1 (ko) 2011-08-11 2014-08-21 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
KR101556281B1 (ko) 2012-12-28 2015-09-30 제일모직 주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
TWI541611B (zh) 2013-06-26 2016-07-11 第一毛織股份有限公司 用於硬罩幕組合物的單體、包括該單體的硬罩幕組合物及使用該硬罩幕組合物形成圖案的方法
KR101705756B1 (ko) * 2013-06-26 2017-02-13 제일모직 주식회사 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
KR101666484B1 (ko) * 2013-06-26 2016-10-17 제일모직 주식회사 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
JP6243815B2 (ja) * 2014-09-01 2017-12-06 信越化学工業株式会社 半導体装置基板の製造方法
KR102477091B1 (ko) 2015-07-24 2022-12-13 삼성전자주식회사 2차원 물질 하드마스크와 그 제조방법 및 하드 마스크를 이용한 물질층 패턴 형성방법
KR101920642B1 (ko) * 2015-11-27 2018-11-21 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자
CN109415513B (zh) * 2016-06-16 2022-02-25 美国陶氏有机硅公司 富含硅的倍半硅氧烷树脂
KR102480348B1 (ko) * 2018-03-15 2022-12-23 삼성전자주식회사 실리콘게르마늄 식각 전의 전처리 조성물 및 이를 이용한 반도체 장치의 제조 방법
CN108871814A (zh) * 2018-07-09 2018-11-23 广东工贸职业技术学院 一种基于轮载式智能传感汽车轮胎动态负荷能力监测方法
JP7553245B2 (ja) * 2020-02-20 2024-09-18 東京応化工業株式会社 ハードマスク形成用組成物及び電子部品の製造方法、及び樹脂

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2623780B2 (ja) 1988-10-19 1997-06-25 富士通株式会社 有機硅素重合体レジスト組成物
JP4096138B2 (ja) * 1999-04-12 2008-06-04 Ｊｓｒ株式会社 レジスト下層膜用組成物の製造方法
US7115531B2 (en) * 2000-08-21 2006-10-03 Dow Global Technologies Inc. Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices
AU2002354487A1 (en) * 2001-12-14 2003-06-30 Asahi Kasei Kabushiki Kaisha Coating composition for forming low-refractive index thin layers
US6730454B2 (en) * 2002-04-16 2004-05-04 International Business Machines Corporation Antireflective SiO-containing compositions for hardmask layer
JP3953982B2 (ja) * 2002-06-28 2007-08-08 富士通株式会社 半導体装置の製造方法及びパターンの形成方法
JP2004059738A (ja) 2002-07-29 2004-02-26 Jsr Corp 膜形成用組成物、膜の形成方法およびシリカ系膜
JP4369203B2 (ja) 2003-03-24 2009-11-18 信越化学工業株式会社 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
KR100857967B1 (ko) * 2003-06-03 2008-09-10 신에쓰 가가꾸 고교 가부시끼가이샤 반사 방지막 재료, 이것을 이용한 반사 방지막 및 패턴형성 방법
US7172849B2 (en) * 2003-08-22 2007-02-06 International Business Machines Corporation Antireflective hardmask and uses thereof
US7270931B2 (en) 2003-10-06 2007-09-18 International Business Machines Corporation Silicon-containing compositions for spin-on ARC/hardmask materials
JP2005173552A (ja) * 2003-11-20 2005-06-30 Tokyo Ohka Kogyo Co Ltd リソグラフィー用下層膜形成材料およびこれを用いた配線形成方法
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
JP4860953B2 (ja) * 2005-07-08 2012-01-25 富士通株式会社 シリカ系被膜形成用材料、シリカ系被膜及びその製造方法、多層配線及びその製造方法、並びに、半導体装置及びその製造方法
EP1762895B1 (en) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
JP2007291167A (ja) * 2006-04-21 2007-11-08 Hitachi Chem Co Ltd シリカ系被膜形成用組成物、シリカ系被膜の製造方法及び電子部品
US8026040B2 (en) * 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition

Also Published As

Publication number Publication date
TW200832060A (en) 2008-08-01
JP5271274B2 (ja) 2013-08-21
EP2095188A4 (en) 2010-06-16
CN101490621B (zh) 2013-03-13
JP2010510541A (ja) 2010-04-02
US8273519B2 (en) 2012-09-25
EP2095188B1 (en) 2017-02-22
WO2008063016A1 (en) 2008-05-29
EP2095188A1 (en) 2009-09-02
KR100796047B1 (ko) 2008-01-21
US20080118875A1 (en) 2008-05-22
CN101490621A (zh) 2009-07-22

Similar Documents

Publication Publication Date Title
TWI366068B (en) Hardmask composition for processing resist underlayer film, process for producing semiconductor integrated circuit device using the hardmask composition, and semiconductor integrated circuit device produced by the process
TWI367221B (en) Hardmask composition having antireflective properties, process for forming patterned material layer by using the composition and semiconductor integrated circuit device produced using the process
TWI316284B (en) Semiconductor device, fabrication methods thereof and methods for forming a tungsten-containing layer
TWI346995B (en) Semiconductor device and method for producing the same
TWI371778B (en) Process for forming resist pattern, semiconductor device and manufacturing method for the same
EP2159832A4 (en) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INSULATING FILM FOR SEMICONDUCTOR DEVICE, AND APPARATUS FOR MANUFACTURING INSULATING FILM
TWI347151B (en) Flexible substrate having interlaminar junctions, and process for producing the same
TWI341440B (en) Resist composition, method for forming resist pattern, and semiconductor device and method for manufacturing the same
TWI341021B (en) Electronic substrate, semiconductor device, and electronic device
TWI349346B (en) Semiconductor device and method for manufacturing the same
TWI318439B (en) Method for manufacturing semiconductor device
TWI369582B (en) Novel organosilane polymer, hardmask composition for processing resist underlayer film comprising the organosilane polymer, and process for producing semiconductor integrated circuit device using the hardmask composition
GB0821002D0 (en) Compound semiconductor epitaxial substrate and method for producing the same
GB0816666D0 (en) Semiconductor field effect transistor and method for fabricating the same
TWI340428B (en) Semiconductor device and fabrication process thereof
EP1876157A4 (en) SEMICONDUCTOR PORCELAIN COMPOSITION AND METHOD FOR MANUFACTURING THE SAME
EP2077291A4 (en) BIS (AMINOPHENOL) DERIVATE, METHOD OF MANUFACTURING THEREOF, POLYAMIDE RESIN, POSITIVELY WORKING LIGHT-SENSITIVE RESIN COMPOSITIONS, PROTECTIVE FILM, INTERMEDIATE-LAYERED TEMPORARILY, SEMICONDUCTOR DEVICE AND DISPLAY ELEMENT
GB0708426D0 (en) Semiconductor multilayer substrate, method for producing same and light-emitting device
TWI371836B (en) Semiconductor device and method for fabricating the same
TWI368827B (en) Hardmask composition for resist underlayer film and method for producing semiconductor integrated circuit device using the same
EP2063461A4 (en) POLISHING AGENT FOR AN INTEGRATED SEMICONDUCTOR ELEMENTS, POLISHING METHOD AND METHOD FOR PRODUCING AN INTEGRATED SEMICONDUCTOR EQUIPMENT
TWI316293B (en) Semiconductor device and method for manufacturing the same
TWI372415B (en) Semiconductor device and method for forming pattern in the same
TWI346985B (en) Methods for forming the semiconductor devices
TWI315553B (en) Flexible printed wiring board, method for fabricating flexible printed wiring board, and semiconductor device